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savantic semiconductor product specification silicon npn power transistors 2SD845 description with mt-200 package complement to type 2sb755 high transition frequency high breakdown voltage :v ceo =150v(min) applications for power amplifier applications pinning(see fig.2) pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 150 v v ebo emitter-base voltage open collector 5 v i c collector current 12 a i b base current 1.2 a p c collector power dissipation t c =25 120 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (mt-200) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD845 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =0.1a; i b =0 150 v v (br)ebo emitter-base breakdown voltage i e =10ma; i c =0 5 v v cesat collector-emitter saturation voltage i c =5 a;i b =0.5 a 2.0 v v be base-emitter on voltage i c =5a ; v ce =5v 1.5 v i cbo collector cut-off current v cb =150v; i e =0 -50 a i ebo emitter cut-off current v eb =5v; i c =0 -50 a h fe dc current gain i c =1a ; v ce =5v 55 160 f t transition frequency i c =1a ; v ce =10v 20 mhz h fe classifications r o 55-110 80-160
savantic semiconductor product specification 3 silicon npn power transistors 2SD845 package outline fig.2 outline dimensions

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