dual enhancement mode field effect transistor ( n and p channel) nov. 2001 features 30v ,7a , r ds(on) =30m @v gs =10v. super high dense cell design for extremely low r ds(on) . high power and current handing capability. surface mount package. absolute maximum ratings (t a =25 c unless otherwise noted) parameter symbol n-channel p-channel unit drain-source voltage v ds v gate-source voltage v gs v drain current-continuous @t j =125 c -pulsed i d 2.0 a a a w i dm drain-source diode forward current i s maximum power dissipation p d operating junction and storage temperature range t j ,t stg -55 to 150 c thermal characteristics thermal resistance, junction-to-ambient r / ja 62.5 /w c ? r ds(on) =42m @v gs =4.5v. ? -30v , -3.5a , r ds(on) =100m @v gs =-10v. ? r ds(on) =160m @v gs =-4.5v. ? CEM9939A a a a a b 30 20 7 30 2.3 -30 20 3.5 14 -1.7 1234 8765 s 1 g 1 s 2 g 2 d 1 d 1 d 2 d 2 5 so-8 1 5-157
CEM9939A n-channel electrical characteristics (t a =25 c unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss = v gs 0v, i d 250 a = 30 v zero gate voltage drain current i dss v ds 30v, v gs 0v == 1 a gate-body leakage i gss v gs 20v, v ds =0v = 100 na on characteristics b gate threshold voltage v gs(th) v ds v gs ,i d= 250 a = 1 1.5 3 v drain-source on-state resistance r ds(on) v gs 10v, i d 7a 24 30 m ? v gs 4.5v, i d 3.5a 32 42 m ? on-state drain current i d(on) v ds =5v,v gs = 10v 30 10 a s forward transconductance fs g v ds 15v, i d 7a dynamic characteristics c input capacitance c iss c rss c oss output capacitance reverse transfer capacitance v ds =15v, v gs =0v f =1.0mh z 804 p f 328 p f p f 79 switching characteristics c turn-on delay time rise time turn-off delay time t d(on) t r t d(off) t f v dd =25v, i d =1a, v gs =10v, r gen =6 16 24 ns ns ns ns 7 14 47 60 10 15 total gate charge gate-source charge gate-drain charge q g q gs q gd v ds =15v, i d = 2a, v gs =10v 20 24 nc nc nc 3 6 c fall time = = = = == ? 5-158 5
CEM9939A p-channel electrical characteristics (t a =25 c unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss = v gs 0v, i d 250 a = -30 v zero gate voltage drain current i dss v ds -24v, v gs 0v == -1 a gate-body leakage i gss v gs 20v, v ds =0v = 100 na on characteristics b gate threshold voltage v gs(th) v ds v gs ,i d = -250 a = -1 -1.4 -3 v drain-source on-state resistance r ds(on) v gs -10v, i d -3.5a 60 100 m ? v gs -4.5v, i d -2a 110 160 m ? on-state drain current i d(on) v ds = -5v, v gs = -10v -14 4.5 3 a s forward transconductance fs g v ds -15v, i d -3.5a dynamic characteristics c input capacitance c iss c rss c oss output capacitance reverse transfer capacitance v ds =-15v, v gs =0v f =1.0mh z 810 p f 350 p f p f 130 switching characteristics c turn-on delay time rise time turn-off delay time t d(on) t r t d(off) t f v dd = -15v, i d =-1a, v gen = -10v, r gen =6 20 28 ns ns ns ns 714 37 50 23 32 total gate charge gate-source charge gate-drain charge q g q gs q gd v ds =-10v, i d = -3.5a, v gs =-10v 16 21 nc nc nc 2 4.5 c fall time = = = = == ? 5-159 5
CEM9939A parameter symbol condition min typ max unit electrical characteristics (t a =25 c unless otherwise noted) drain-source diode characteristics diode forward voltage v sd v gs = 0v, is = 2a n-ch 0.76 1.1 -0.80 -1.2 v gs = 0v, is =-1.7a p-ch v b c notes c.guaranteed by design, not subject to production testing. b.pulse test:pulse width 300 3 s, duty cycle 2%. [ [ a.surface mounted on fr4 board, t 10sec. [ 5-160 5 n-channel figure 1. output characteristics figure 2. transfer characteristics figure 4. on-resistance variation with drain current and temperature figure 3. capacitance v ds , drain-to source voltage (v) v gs , gate-to-source voltage (v) v ds , drain-to-source voltage (v) i d , drain current(a) c, capacitance (pf) r ds (on) , on-resistance (ohms) i d , drain current (a) i d , drain current (a) tj=125 c 25 c -55 c 0.06 0.05 0.04 0.03 0.02 0.01 0 0 5 10 15 20 v gs =10v 25 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =10,8,7,6,5v v gs =4v v gs =3v -55 c 25 c 30 24 18 12 6 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 tj=125 c 0 5 10 15 20 25 30 ciss coss crss 1800 1500 1200 900 600 300 0
CEM9939A 5-161 5 n-channel figure 5. gate threshold variation with temperature figure 6. breakdown voltage variation with temperature vth, normalized gate-source threshold voltage g fs , transconductance (s) bv dss , normalized drain-source breakdown voltage -is, source-drain current (a) figure 7. transconductance variation with drain current i ds , drain-source current (a) figure 8. body diode forward voltage variation with source current v sd , body diode forward voltage (v) tj, junction temperature ( c) tj, junction temperature ( c) 30.0 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 1.09 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 v ds =v gs i d =250 ? a -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 id=-250 ? a 20 15 10 5 25 0 0 5 10 15 20 v ds =15v
5-162 5 i d , drain current (a) c, capacitance (pf) i d , drain current (a) v ds , drain-to-source voltage (v) figure 1. output characteristics figure 3. capacitance figure 4. on-resistance variation withdrain current and temperature figure 2. transfer characteristics p-channel i d , drain current (a) -v ds , drain-to-source voltage (v) v gs , gate-to-source voltage (v) r ds(on) , on-resistance (ohms) 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0 -2.5 -5 -7.5 -10 -55 c 25 c t j =125 c v gs =-10v CEM9939A -25 -20 -15 -5 -10 0 -1.0 0 -1.5 -2.0 -2.5 -3.0 -3.5 v gs =-10v -3v -4v -5v -6v -7v 0.1 -1 -1.5 -2.0 -2.5 -3.0 -3.5 -20 -16 -12 -8 -4 0 -55 c 25 c t j =125 c ciss coss crss 1200 1000 800 600 400 200 0 010 515202530
CEM9939A p-channel 5-163 5 vth, normalized gate-source threshold voltage g fs , transconductance (s) bv dss , normalized drain-source breakdown voltage tj, junction temperature ( c) figure 5. gate threshold variation with temperature figure 7. transconductance variation with temperature figure 8. body diode forward voltage variation with source current figure 6. breakdown voltage variation with temperature -v ds , body diode forward voltage (v) -i ds , drain-source current (a) tj, junction temperature ( c) -i d , drain current (a) 1.0 5.0 20.0 10.0 0 0.3 0.6 0.9 1.2 1.5 1.2 1.1 1.0 0.9 0.7 0.8 0.6 -50 -25 0 25 50 75 100 125 150 v ds =v gs i d =-250 ? a -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =250 3 a 6.0 4.5 3.0 1.5 9.0 7.5 0 0246 810 v ds =-15v - -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =-250 ? a
CEM9939A 5-164 5 n-channel -v gs , gate to source voltage (v) figure 9. gate charge figure 10. maximum safe operating area p-channel -v ds , body diode forward voltage (v) qg, total gate charge (nc) -i d , drain current (a) v gs , gate to source voltage (v) figure 9. gate charge qg, total gate charge (nc) figure 10. maximum safe operating area v ds , drain-source voltage (v) i d , drain current (a) 8 10 6 4 2 0 02 4 6 810121416 v ds =-10v i d =-3.5a 10 8 6 4 2 0 0 3 6 9 12 15 18 21 24 v ds =15v i d =2a 50 10 1 0.1 0.03 0.1 1 10 30 50 r d s (on ) lim it v gs =10v single pulse t a =25 c 10 ms 100 ms 1s dc 0.1 0.03 1 30 10 0.1 1 10 30 50 v gs =-10v single pulse t a =25 c r ds (on) limit 1 0m s 1 00 m s 1 s dc
figure 11. switching test circuit figure 12. switching waveforms t v v t t d(on) out in on r 10% t d(off) 90% 10% 10% 50% 50% 90% t off t f 90% pulse width transient thermal impedance 2 1 0.1 0.01 square wave pulse duration (sec) figure 13. normalized thermal transient impedance curve r(t),normalized effective 5-165 5 CEM9939A inverted duty cycle=0.5 0.2 0.1 0.05 0.02 single pulse 10 -4 10 -3 10 -2 10 -1 1 10 100 p dm t 1 t 2 1. r / ja (t)=r (t) * r / ja 2. r / ja =see datasheet 3. t jm- t a =p dm *r / ja (t) 4. duty cycle, d=t 1 /t 2 v dd r d v v r s v g gs in gen out l
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