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| jmnic product specification silicon npn power transistors 2SC3456 description ? ? with to-220c package ? high breakdown voltage and high reliability ? fast switching speed. ? wide aso ? area of safe operation ? applications ? 800v/1.5a switching regulator applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1100 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 7 v i c collector current 1.5 a i cm collector current-peak 5 a i b base current 0.8 a p c collector dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
jmnic product specification 2 silicon npn power transistors 2SC3456 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =5ma ; r be = ?t 800 v v (br)cbo collector-base breakdown voltage i c =1ma ; i e =0 1100 v v (br)ebo emitter-base breakdown voltage i e =1ma ; i c =0 7 v v cesat collector-emitter saturation voltage i c =0.75a; i b =0.15a 2.0 v v besat base-emitter saturation voltage i c =0.75a; i b =0.15a 1.5 v i cbo collector cut-off current v cb =800v ;i e =0 10 | a i ebo emitter cut-off current v eb =5v; i c =0 10 | a h fe-1 dc current gain i c =0.1a ; v ce =5v 10 40 h fe-2 dc current gain i c =0.5a ; v ce =5v 8 f t transition frequency i c =0.1a ; v ce =10v 15 mhz c ob output capacitance f=1mhz ; v cb =10v 35 pf switching times t on turn-on time 0.5 | s t stg storage time 3.0 | s t f fall time v cc =400v; i c =1a i b1 =0.2a;i b2 =-0.4a; r l =400 |? 0.3 | s ? h fe-1 classifications k l m 10-20 15-30 20-40 jmnic product specification 3 silicon npn power transistors 2SC3456 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) jmnic product specification 4 silicon npn power transistors 2SC3456 |
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