vorl?ufige daten preliminary data i c,nom. 50 a i c 55 a min. typ. max. - 1,95 2,55 v - 2,20 - v 600 100 202 + 20 50 100 -5 - - - 6,5 4,5 2,5 ma na gate emitter leakage current gate emitter reststrom i ges 400 - - i ces - v nf 2,2 - 0,3 - c 5,5 i2t grenzlastintegral 630 v ge = 15v, t vj = 25c, i c = i c,nom repetitive peak collector current t p = 1ms, t c = 55c periodischer kollektor spitzenstrom p tot t c = 25c, transistor gesamt verlustleistung total power dissipation h?chstzul?ssige werte / maximum rated values kollektor emitter sperrspannung t c = 55c kollektor dauergleichstrom collector emitter voltage elektrische eigenschaften / electrical properties t vj = 25c a revision: 2.1 dc collector current t c = 25c i frm v ge(th) c ies v ge = -15v...+15v v ge = 15v, t vj = 125c, i c = i c,nom q g t p = 1ms i f gate emitter spitzenspannung gate schwellenspannung gate emitter peak voltage dauergleichstrom kollektor emitter s?ttigungsspannung dc forward current insulation test voltage collector emitter saturation voltage i2t value date of publication: 2002-11-25 v ce = v ge , t vj = 25c, i c = 1ma gate threshold voltage rckwirkungskapazit?t reverse transfer capacitance v ce = 600v, v ge = 0v, t vj = 25c v ce = 0v, v ge = 20v, t vj = 25c gate charge gateladung f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v technische information / technical information fs50r06yl4 igbt-module igbt-modules kv v ces v a i crm v isol v a2s w a v ges repetitive peak forward current v cesat charakteristische werte / characteristic values periodischer spitzenstrom v r = 0v, t p = 10ms, t vj = 125c isolations prfspannung rms, f= 50hz, t= 1min transistor wechselrichter / transistor inverter eingangskapazit?t input capacitance f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v prepared by: p. kanschat kollektor emitter reststrom approved: r. keggenhoff collector emitter cut off current c res nf - 0,2 1 (9)
vorl?ufige daten preliminary data technische information / technical information fs50r06yl4 igbt-module igbt-modules min. typ. max. -42-ns -43-ns -11-ns -12-ns - 120 - ns - 130 - ns -20-ns -30-ns - 1,25 1,7 v - 1,20 - v -88- a -94- a - 3,2 - c - 5,4 - c - 1,05 - mj - 1,50 - mj fallzeit (induktive last) fall time (inductive load) kurzschlussverhalten t p 10sec, v ge 15v, t vj = 125c, i sc einschaltverlustenergie pro puls turn on energy loss per pulse ausschaltverlustenergie pro puls i c = 50a, v cc = 300v, v ge = 15v r g = 3,3 ? , t vj = 125c, l = 15nh sc data sperrverz?gerungsladung recovered charge i f = 50a, -di f /dt= 2600 a/s q r e rec v r = 300v, v ge = -10v, t vj = 125c e off - t d,off a - nh stray inductance module modulinduktivit?t l ce - 35 - diode wechselrichter / diode inverter ausschaltenergie pro puls reverse recovery energy v r = 300v, v ge = -10v, t vj = 25c v r = 300v, v ge = -10v, t vj = 125c i f = 50a, -di f /dt= 2600 a/s turn off energy loss per pulse v cc =360v, v cemax =v ces -l ce |di/dt| - 4 - - - r cc/ee 225 v ge = 15v, r g = 3,3 ? , t vj = 25c v ge = 15v, r g = 3,3 ? , t vj = 125c - e on v ge = 15v, r g = 3,3 ? , t vj = 25c t f i c = 50a, v cc = 300v, v ge = 15v r g = 3,3 ? , t vj = 125c, l = 15nh m ? charakteristische werte / characteristic values i c = 50a, v cc = 300v v ge = 15v, r g = 3,3 ? , t vj = 25c v ge = 15v, r g = 3,3 ? , t vj = 125c mj -mj i c = 50a, v cc = 300v 0,5 v r = 300v, v ge = -10v, t vj = 125c v f forward voltage rckstromspitze peak reverse recovery current i rm v r = 300v, v ge = -10v, t vj = 25c i f = 50a, -di f /dt= 2600 a/s charakteristische werte / characteristic values i f = 50a, v ge = 0v, t vj = 25c i f = 50a, v ge = 0v, t vj = 125c lead resistance, terminal-chip durchlassspannung t c = 25c leitungswiderstand, anschluss-chip abschaltverz?gerungszeit (induktive last) turn off delay time (inductive load) v r = 300v, v ge = -10v, t vj = 25c i c = 50a, v cc = 300v transistor wechselrichter / transistor inverter t d,on anstiegszeit (induktive last) rise time (inductive load) i c = 50a, v cc = 300v t r einschaltverz?gerungszeit (induktive last) turn on delay time (inductive load) v ge = 15v, r g = 3,3 ? , t vj = 125c v ge = 15v, r g = 3,3 ? , t vj = 125c v ge = 15v, r g = 3,3 ? , t vj = 25c 1,35 2 (9)
vorl?ufige daten preliminary data technische information / technical information fs50r06yl4 igbt-module igbt-modules min. typ. max. - - 0,62 k/w - - 1,20 k/w - 0,95 - k/w - 1,50 - k/w - 0,35 - k/w - 0,45 - k/w r thch mm mm 5,0 mm 5,0 terminal to heatsink n r thjc 225 c transistor wechelr. / transistor inverter 12,0 kriechstrecke anschluss - anschluss luftstrecke anschluss - anschluss creepage distance anschluss - khlk?rper terminal to terminal clearance distance terminal to heatsink maximum junction temperature h?chstzul?ssige sperrschichttemp. operation temperature betriebstemperatur paste = 1 w / m*k / grease = 1 w / m*k anschluss - khlk?rper diode wechselrichter / diode inverter transistor wechelr. / transistor inverter diode wechselrichter / diode inverter lagertemperatur transistor wechelr. / transistor inverter diode wechselrichter / diode inverter paste = 1 w / m*k / grease = 1 w / m*k bergangs-w?rmewiderstand, dc thermal resistance, case to heatsink; dc 125 t vjmax t op -40 - t stg - -40 - innerer w?rmewiderstand; dc thermal resistance, juncton to case; dc c terminal to terminal al 2 o 3 mm - 125 40..80 thermal resistance, junction to heatsink, dc mw 150 - 20 k c thermische eigenschaften / thermal properties b-value - verlustleistung b-wert r 2 = r 1 exp[b(1/t 2 - 1/t 1 )] b 25/50 - % k ? -5 - 5 - -5 charakteristische werte / characteristic values ntc-widerstand / ntc-thermistor nennwiderstand t c = 25c rated resistance w?rmewiderstand; dc mechanische eigenschaften / mechanical properties storage temperature g gewicht 13,5 comperative tracking index f weight anpresskraft pro feder mounting force per clamp abweichung von r 100 t c = 25c p 25 power dissipation deviation of r 100 t c = 100c, r 100 = 493 ? ? r/r innere isolation internal insulation cti 36 - r thjh r 25 3375 g 3 (9)
vorl?ufige daten preliminary data technische information / technical information fs50r06yl4 igbt-module igbt-modules i c = f(v ce ) v ge = 15v output characteristic (typical) output characteristic (typical) t vj = 125c ausgangskennlinienfeld (typisch) i c = f(v ce ) ausgangskennlinie (typisch) 0 10 20 30 40 50 60 70 80 90 100 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 v ce [v] i c [a] tvj = 25c tvj = 125c 0 10 20 30 40 50 60 70 80 90 100 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 v ce [v] i c [a] vge = 20v vge = 15v vge = 12v vge = 10v vge = 9v vge = 8v 4 (9)
vorl?ufige daten preliminary data technische information / technical information fs50r06yl4 igbt-module igbt-modules i c = f(v ge ) v ce = 20v durchlasskennlinie der inversdiode (typisch) i f = f(v f ) forward characteristic of inverse diode (typical) bertragungscharakteristik (typisch) transfer characteristic (typical) 0 10 20 30 40 50 60 70 80 90 100 5 6 7 8 9 10 11 12 13 v ge [v] i c [a] tvj = 25c tvj = 125c 0 10 20 30 40 50 60 70 80 90 100 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 v f [v] i f [a] tvj = 25c tvj = 125c 5 (9)
vorl?ufige daten preliminary data technische information / technical information fs50r06yl4 igbt-module igbt-modules schaltverluste (typisch) switching losses (typical) e on = f(i c ), e off = f(i c ), e rec = f(i c ) v ge = 15v, r g = 3,3 ? , v ce = 300v, t vj = 125c s c h a lt ver l us t e (t yp i sc h) switching losses (typical) e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) v ge = 15v, i c = 50a, v ce = 300v, t vj = 125c 0 0,5 1 1,5 2 2,5 3 0 102030405060708090100 i c [a] e [mj] eon eoff erec 0 1 2 3 0 5 10 15 20 25 30 35 r g [ ? ] e [mj] eon eoff erec 6 (9)
vorl?ufige daten preliminary data technische information / technical information fs50r06yl4 igbt-module igbt-modules transienter w?rmewiderstand transient thermal impedance i r i [k/kw]: igbt i [s]: igbt r i [k/kw]: diode i [s]: diode sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) v ge = 15v, t j =125c z thjh = f (t) 0,00056 0,01240 0,12800 0,25430 1 57,0 0,00075 75,0 2 190,0 0,02088 210,0 3 532,0 0,14800 885,0 4 171,0 0,25430 330,0 0 20 40 60 80 100 120 0 200 400 600 v ce [v] i c [a] ic,chip ic, modul 1,0000e-02 1,0000e-01 1,0000e+00 1,0000e+01 0,001 0,01 0,1 1 10 t (s) z thjh (k/w) zth:igbt zth:diode 7 (9)
vorl?ufige daten preliminary data technische information / technical information fs50r06yl4 igbt-module igbt-modules schaltbild circuit diagram geh?usema?e package outline bohrplan drilling layout ? 8 (9)
vorl?ufige daten preliminary data technische information / technical information fs50r06yl4 igbt-module igbt-modules this technical information specifies semiconductor devices but promises no characteristics. it is valid with the belonging technical notes. mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. geh?usema?e fortsetzung package outline contd. 9 (9)
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