5?46 sfh618a/628a phototransistor, 5.3 kv trios low current input optocoupler maximum ratings emitter reverse voltage (sfh618a)6 v dc forward current (sfh628a: ) 50 ma surge forward current (t p 10 m s) (sfh628a: )2.5 a total power dissipation70 mw detector collector-emitter voltage55 v emitter-collector voltage7 v collector current50 ma collector current (t p 1 ms)100 ma total power dissipation150 mw package isolation test voltage between emitter and detector, refer to climate din 40046, part 2, nov. 745300 vac rms creepage 3 7 mm clearance 3 7 mm insulation thickness between emitter and detector 3 0.4 mm comparative tracking index per din iec 112/vde0 303, part 1175 isolation resistance v io =500 v, t a =25 c 3 10 12 w v io =500 v, t a =100 c 3 10 11 w storage temperature range?5 to +150 c ambient temperature range?5 to +100 c junction temperature100 c soldering temperature (max. 10 s. dip soldering distance to seating plane 3 1.5 mm)260 c speci?ations subject to change. package dimensions in inches (mm) . 268 (6.81) . 255 (6.48) 1 2 4 3 .190 (4.83) .179 (4.55) pin one i.d. .045 (1.14) .030 (.76) 4 typ. 1.00 (2.54) typ. .150 (3.81) .130 (3.30) .040 (1.02) .030 (.76 ) 10 typ. 3 ? .305 (7.75) .022 (.56) .018 (.46) .012 (.30) .008 (.20) .135 (3 .43 .115 (2 .92 collector emitter anode cathode sfh618a 1 2 4 3 collector emitter anode/ cathode cathode/ anode sfh628a 1 2 4 3 features ? very high ctr at i f =1 ma, v ce =0.5 v ?sfh618a-2, 63?25% ?sfh618a-3, 100?00% ?sfh618a-4, 160?20% ?sfh618a-5, 250?00% ?sfh628a-2, 63?00% ?sfh628a-3, 100?20% ?sfh628a-4, 160?00% speci?d minimum ctr at i f =-0.5 ma ?sfh618a, v ce =1.5 v: 3 32% (typical 120%) ?sfh628a, v ce =1.5 v: 3 50% (typical 160%) ? good ctr linearity depending on forward current ? low ctr degradation ? high collector-emitter voltage, v ceo =55 v ? isolation test voltage, 5300 vac rms ? low coupling capacitance ? field-effect stable by trios (transparent ion shield) ? end-stackable, 0.100"(2.54 mm) spacing ? high common-mode interference immunity (unconnected base) ? underwriters lab file #52744 vde 0884 available with option 1 smd option ?see sfh6186/6286 data sheet applications telecom industrial controls battery powered equipment of?e machines description the sfh618a/628a feature a high current transfer ratio, low coupling capacitance and high isolation voltage. these cou- plers have a gaas infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic dip-4 package. the coupling devices are designed for signal transmission between two electrically separated circuits. the couplers are end-stackable with 2.54 mm spacing. therefore multicouplers can easily be implemented and con- ventional multicouplers can be replaced. creepage and clearance distances of >8 mm are achieved with option 6. this version complies with iec 950 (din vde 0805) for reinforced insulation up to an operation voltage of 400 v rms or dc.
5?47 sfh618a/628a characteristics (t a =25 c) description symbol min. typ. max. unit condition emitter forward voltage v f 1.1 1.5 v i f =5 ma reverse current sfh618a i r .01 10 v r =6 v capacitance sfh618a sfh628a c 0 25 45 pf v r =0 v, f=1 mhz thermal resistance r thja 1070 k/w detector collector-emitter leakage current i ceo 10 200 na v ce =10 v capacitance c ce 7pf v ce =5 v, f=1 mhz thermal resistance r thja 500 k/w package collector-emitter saturation voltage sfh618a-2 v cesat 0.25 0.4 v i c =0.32 ma, i f =1 ma sfh618a-3 0.25 0.4 i c =0.5 ma, i f =1 ma sfh618a-4 0.25 0.4 i c =0.8 ma, i f =1 ma sfh618a-5 0.25 0.4 i c =1.25 ma, i f =1 ma collector-emitter saturation voltage sfh628a-2 v cesat 0.25 0.4 v i c =0.5 ma, i f = 1 ma sfh628a-3 0.25 0.4 i c =0.8 ma, i f = 1 ma sfh628a-4 0.25 0.4 i c =1.25 ma, i f = 1 ma coupling capacitance c c 0.25 pf coupling transfer ratio sfh618a-2 i c /i f 63 125 % i f =1 ma, v ce =0.5 v sfh618a-2 32 75 i f =0.5 ma, v ce =1.5 v sfh618a-3 i c /i f 100 200 % i f =1 ma, v ce =0.5 v sfh618a-3 50 120 i f =0.5 ma, v ce =1.5 v sfh618a-4 i c /i f 160 320 % i f =1 ma, v ce =0.5 v sfh618a-4 80 200 i f =0.5 ma, v ce =1.5 v sfh618a-5 i c /i f 250 500 % i f =1 ma, v ce =0.5 v sfh618a-5 125 300 i f =0.5 ma, v ce =1.5 v coupling transfer ratio sfh628a-2 i c /i f 63 200 % i f = 1 ma, v ce =0.5 v sfh628a-2 32 100 i f = 0.5 ma, v ce =1.5 v sfh628a-3 i c /i f 100 320 % i f = 1 ma, v ce =0.5 v sfh628a-3 50 160 i f = 0.5 ma, v ce =1.5 v sfh628a-4 i c /i f 160 500 % i f = 1 ma, v ce =0.5 v sfh628a-4 80 250 i f = 0.5 ma, v ce =1.5 v
5?48 sfh618a/628a switching times measurement figure 1. test circuit?fh618a figure 2. test circuit?fh628a figure 3. switching times, typical figure 4. test circuit and waveforms v cc =5 v, i c =2 ma, r l =100 w , t a =25 c turn-on time t on 6.0 m s rise time t r 3.5 m s turn-off time t off 5.5 m s fall time t f 5.0 m s i nput v ou t v cc = 5 v r l i f 47 w r l i c v c c output 0 10% 50% 90% 90% 50% 10% t on t off t pdof t pdon t d t r t s t r input 0
5?49 sfh618a/628a figure 1. current transfer ratio (typ.) figure 2. current transfer ratio (typ.) figure 3. diode forward voltage v ce =0.5 v, ctr=f(t a )v ce =1.5 v, ctr=f(t a )t a =25 c , v f =f(i f ) figure 4. diode forward voltage figure 5. transistor capacitance figure 6. output characteristics i f =1 ma, v f =f(t a )t a =25 c, f=1 mhz, c ce =f(v ce )t a =25 c, ce =f(v ce , i f ) figure 7. permissible forward figure 8. permissible power figure 9. switching times (typ.) current diode i f =f(t a ) dissipation p tot =f(t a )t a =25 c, i f =1 ma, v cc =5 v t on , t r , t off , t f =f(r l )
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