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  1/7 may 2004 sd1407 rf power bipolar transistors hf ssb applications rev. 2 features summary 30 mhz 28 volts imd ?30 db common emitter gold metallization p out = 125 w min. with 15 db gain description the sd1407 is a 28 v epitaxial silicon npn planar transistor desi gned primarily for ssb communica- tions. this device utilizes state-of-the-art diffused emitter ballasting for improved ruggedness and re- liability. figure 1. package figure 2. pin connection table 1. order codes .500 4l fl (m174) epoxy sealed 1. collector 3. base 2. emitter 4. emitter order codes marking package packaging sd1407 sd1407 m174 plastic trays
sd1407 2/7 table 2. absolute maximum ratings (t case = 25c) table 3. thermal data electrical specifications (t case = 25c) table 4. static table 5. dynamic note: 1. p out = 100w pep, f o = 30 + 30.001 mhz symbol parameter value unit v cbo collector-base voltage 65 v v ceo collector-emitter voltage 36 v v ebo emitter-base voltage 4.0 v i c device current 20 a p diss power dissipation 270 w t j junction temperature +200 c t stg storage temperature ? 65 to +150 c symbol parameter value unit r th(j-c) junction-case thermal resistance 0.65 c/w symbol test conditions value unit min. typ. max. bv cbo i c = 100 ma; i e = 0 ma 65 ? ? v bv ces i c = 100 ma; v be = 0 ma 65 ? ? v bv ceo i c = 100 ma; i b = 0 ma 35 ? ? v bv ebo i e = 10 ma; i c = 0 ma 4.0 ? ? v i ces v ce = 30 ma; i e = 0 ma ? ? 15 ma h fe v ce = 5 v; i c = 5 a 10 ? 200 ? symbol test conditions value unit min. typ. max. p out f = 30 mhz; p in = 3.95 w; v ce = 28 v 125 ? ? w g p f = 30 mhz; p in = 3.95 w; v ce = 28 v 15 16 ? db imd (1) f = 30 mhz; v ce = 28 v; i cq = 100 ma ?34 ?30 db c ob f = 1 mhz; v cb = 30 v ? 250 ? pf
3/7 sd1407 typical performance figure 3. safe operating area
sd1407 4/7 test circuit figure 4. test circuit table 6. test circuit c1, 24 - 200pf arco 425 c2, c4 50 - 380pf arco 465 c3 9 - 180pf arco 463 c5 10f, electrolytic, 35vdc c6 0.01f, 100v, ceramic l1 4 turns, #16 awg, tinned, 0.40" i.d. l2, l5 1 turn, #22 awg, tinned, formed with vk-200 #4b ferroxcube l4 17 turns, #18 enameled wire wrapped around r1 r1 390 ? resistor (2 watt)
5/7 sd1407 package mechanical table 7. m174 mechanical data figure 5. m174 package dimensions note: drawing is not to scale. symbol millimeters inches min typ max min typ max a 5.59 5.84 0.220 0.230 b 3.18 0.125 c 6.22 6.48 0.245 0.255 d 18.28 18.54 0.720 0.730 e 3.18 0.125 f 24.64 24.89 0.970 0.980 g 12.57 12.83 0.495 0.505 h 0.08 0.18 0.003 0.007 i 2.29 2.79 0.090 0.110 j 4.06 4.45 0.160 0.175 k 7.11 0.280 l 26.67 1.050
sd1407 6/7 revision history table 8. revision history date revision description of changes october-1992 1 first issue 26-may-2004 2 stylesheet update. no content change.
7/7 sd1407 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states www.st.com


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