production process TQHBT ingap hbt foundry service features ? ingap emitter process for high reliability and thermal stability ? base etch stop for uniformity ? mocvd epitaxy ? high linearity in pa applications ? high density interconnects; ? 2 global, 1 local ? over 6 m total thickness ? dielectric encapsulated metals ? thick metal interconnects: ? enhanced thermal management ? minimum die size ? effective base ballasting for maximum gain ? 150 mm wafers ? high-q passives ? nicr thin film resistors ? high value capacitors ? backside vias optional ? validated models and design support applications ? power amplifiers ? driver amplifiers ? wideband, general purpose amplifiers ? gilbert cell mixers ? vcos ? single supply and easy biasing general description triquint?s TQHBT process is a highly reliable ingap hbt process with three levels of interconnecting metal. thick metal interconnects and high quality passives promote inte- gration. the thick metal interconnects, which promote en- hanced thermal management, and high density capacitors keep die sizes small. mocvd epitaxial processes are utilized to grow the active layers. a carbon-doped base and ingap emitter are utilized for high rf performance consistent with high reliability. precision nicr resistors and high value mim capacitors are included. the three metal layers are encapsu- lated in a high performance dielectric that allows wiring flexi- bility and plastic packaging simplicity. semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 1 of 5; rev 2.1 8/10/02 TQHBT process cross-section dielectric metal 2 - 4um dielectric mim nicr metal 0 c c b b e emitter base collector sub collector buffer & substrate isolation implant metal 1 - 2um metal 1 - 2um dielectric metal 2 - 4um dielectric mim nicr metal 0 c c b b e emitter base collector sub collector buffer & substrate isolation implant metal 1 - 2um metal 1 - 2um dielectric metal 2 - 4um dielectric mim nicr metal 0 c c b b e emitter base collector sub collector buffer & substrate isolation implant metal 1 - 2um metal 1 - 2um dielectric metal 2 - 4um dielectric mim nicr metal 0 c c b b e emitter base collector sub collector buffer & substrate isolation implant metal 1 - 2um metal 1 - 2um
production process TQHBT ingap hbt foundry service semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 2 of 5; rev 2.1 8/10/02 TQHBT process details element parameter value units hbt transistor emitter periphery 3 @ 3 x 45 m for standard cells 1 @ 3 x 45 m vbe 1.25 v beta 75 ft 28 ghz bvcbo 21 v bvebo 7 v bvceo 12 v interconnect metal layers 3 mim caps value 1200 pf/mm2 inductors q @ 2 ghz >20 resistors nicr 50 vias yes mask layers no vias 15 with vias 17 fmax 46 ghz (coming soon:) 3 @ 2 x 45 m TQHBT process details hbt storage temperature range -65 to +150 deg c hbt operating junction temperature range -55 to +150 deg c junction current denstity 20 ka/cm^2 10 v capacitor maximum ratings
production process TQHBT ingap hbt foundry service semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 3 of 5; rev 2.1 8/10/02 s im u late d vs m ea su red iv cu rve s -5.00e-03 0.00e+00 5.00e-03 1.00e-02 1.50e-02 2.00e-02 2.50e-02 3.00e-02 3.50e-02 4.00e-02 4.50e-02 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 vce (v) ic (a) sim ulated ib=10ua m easured ib=10ua sim ulated ib=60ua m easured ib=60ua sim ulated ib=110ua m easured ib=110ua sim ulated ib=160ua m easured ib=160ua sim ulated ib=210ua m easured ib=210ua sim ulated ib=260ua m easured ib=260ua sim ulated ib=310ua m easured ib=310ua sim ulated ib=360ua m easured ib=360ua sim ulated ib=410ua m easured ib=410ua sim ulated ib=460ua m easured ib=460ua three finger 3x45 hbt i-v characteristics three finger 3x45 hbt gummel plot
production process TQHBT ingap hbt foundry service semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 4 of 5; rev 2.1 8/10/02 beta vs temperature 62 64 66 68 70 72 74 25 c 45 c 65 c 85 c temperature beta beta vbe versus temperature 1 1.02 1.04 1.06 1.08 1.1 1.12 1.14 1.16 1.18 25c 45c 6 5c 8 5c temperature vbe vbe -20 -15 -10 -5 0 5 pin [dbm] -5 0 5 10 15 20 25 pout [dbm ] sbc 50 ? data lp data _v3 sim -20 -15 -10 -5 0 5 pin [dbm] 0 10 20 30 40 50 60 70 pae [%] sbc 50 ? data lp data _v3 sim ft and gmax vs ic vce ~ 2.5v 0 10 20 30 40 50 60 70 0 1020304050 collector current (ma) (emitter area = 405 um^2) ft (ghz) -5 0 5 10 15 20 25 30 2.0 ghz gmax (db) ft gmax ft and gmax versus collector current beta versus junction temperature vbe versus junction temperature compression- modeled vs measured efficiency? modeled vs. measured
production process TQHBT ingap hbt foundry service semiconductors for communications www.triquint.com triquint semiconductor 2300 ne brookwood pkwy hillsboro, oregon 97124 phone: 503-615-9000 fax: 503-615-8905 email: info@triquint.com page 5 of 5; rev 2.1 8/10/02 applications support services ? tiling of gdsii stream files including pcm ? design rule check services ? layout versus schematic check services ? packaging development engineering ? test development engineering: ? on-wafer ? packaged parts ? thermal analysis engineering ? yield enhancement engineering ? part qualification services ? failure analysis manufacturing services ? mask making ? pre-production 100 & 150 mm wafer fab ? wafer thinning ? wafer sawing ? substrate vias ? dc die sort testing ? rf on-wafer testing ? plastic packaging ? rf packaged part testing please contact your local triquint semiconductor representative/ distributor or foundry services division marketing for additional information: e-mail: sales@triquint.com phone: (503) 615-9316 fax: (503) 615-8905 design tool status ? design manual ? device library of circuit elements: transistors, diodes, thin film resistors, capacitors, inductors ? parameters for gummel-poon model ? agilent ads now ? mwo and pspice now ? process corner models planned ? layout files available for: ? cadence, mwo, & iced now ? layout rule sets for design rule & layout versus sche- matic check now ? qualified package models for supported package styles prototyping and development ? prototype development quickturn (pdq): ? shared mask set; ? run monthly ? hot lot cycle time ? via and non-via options ? prototype wafer option (pwo): ? customer-specific masks, customer schedule ? 2 wafers delivered ? hot lot cycle time ? with thinning and sawing; optional backside vias process qualification status ? mature process based on 10 ghz, 8v vdd process for military phased-array radar applications. ? over 10 years of reliability data collected. ? process qualification program complete. ? 150mm wafer conversion qualification underway. ? for more information on quality & reliability, contact triquint or visit: www.triquint.com/manufacturing/qr/ training ? gaas design classes: ? half day introduction; upon request ? four day technical training; fall & spring at triquint oregon facility ? for training & pdq schedules please visit: www.triquint.com/foundry/
|
