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  i/o 0-31 data inputs/outputs a 0-16 address inputs we 1-4 write enables cs 1-4 chip selects oe output enable v cc power supply gnd ground nc not connected 
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   supply voltage v cc 4.5 5.5 v input high voltage v ih 2.0 v cc + 0.3 v input low voltage v il -0.5 +0.8 v operating temp. (mil.) t a -55 +125 c a 9 voltage for sector protect v id 11.5 12.5 v    operating temperature -55 to +125 c supply voltage range (v cc ) -2.0 to +7.0 v signal voltage range (any pin except a9) (2) -2.0 to +7.0 v storage temperature range -65 to +150 c lead temperature (soldering, 10 seconds) +300 c data retention mil temp 10 years endurance (write/erase cycles) mil temp 10,000 cycles min. a 9 voltage for sector protect (v id ) (3) -2.0 to +14.0 v   
       input leakage current i li v cc = 5.5, v in = gnd to v cc 10 a output leakage current i lox32 v cc = 5.5, v in = gnd to v cc 10 a v cc active current for read (1) i cc1 cs = v il , oe = v ih 140 ma v cc active current for program i cc2 cs = v il , oe = v ih 200 ma or erase (2) v cc standby current i cc3 v cc = 5.5, cs = v ih , f = 5mhz 6.5 ma v cc static current i cc4 v cc = 5.5, cs = v ih 0.6 ma output low voltage v ol i ol = 8.0 ma, v cc = 4.5 0.45 v output high voltage v oh1 i oh = -2.5 ma, v cc = 4.5 0.85 x v v cc output high voltage v oh2 i oh = -100 a, v cc = 4.5 v cc v -0.4 low v cc lock out voltage v lko 3.2 v  
       oe capacitance c oe v in = 0 v, f = 1.0 mhz 50 pf we 1-4 capacitance c we v in = 0 v, f = 1.0 mhz pf hip (pga) 20 cqfp g2u/g1u/g1t/g2l 15 cs 1-4 capacitance c cs v in = 0 v, f = 1.0 mhz 20 pf data i/o capacitance c i/o v i/o = 0 v, f = 1.0 mhz 20 pf address input capacitance c ad v in = 0 v, f = 1.0 mhz 50 pf &"    ) '  ')   
   

  
   

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              write cycle time t avav t wc 50 60 70 90 120 150 ns we setup time t wlel t ws 00 00 00ns cs pulse width t eleh t cp 25 30 35 45 50 50 ns address setup time t avel t as 00 00 00ns data setup time t dveh t ds 25 30 30 45 50 50 ns data hold time t ehdx t dh 00 00 00ns address hold time t elax t ah 40 45 45 45 50 50 ns we hold from we high t ehwh t wh 00 00 00ns cs pulse width high t ehel t cph 20 20 20 20 20 20 ns duration of programming operation t whwh1 14 14 14 14 14 14 s duration of erase operation t whwh2 2.2 60 2.2 60 2.2 60 2.2 60 2.2 60 2.2 60 sec read recovery before write t ghel 00 00 00ns chip programming time 12.5 12.5 12.5 12.5 12.5 12.5 sec 
  
  
   

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              write cycle time t avav t wc 50 60 70 90 120 150 ns chip select setup time t elwl t cs 00 000 0 ns write enable pulse width t wlwh t wp 25 30 35 45 50 50 ns address setup time t avwl t as 00 000 0 ns data setup time t dvwh t ds 25 30 30 45 50 50 ns data hold time t whdx t dh 00 000 0 ns address hold time t wlax t ah 40 45 45 45 50 50 ns chip select hold time t wheh t ch 00 000 0 ns write enable pulse width high t whwl t wph 20 20 20 20 20 20 ns duration of byte programming operation (min) t whwh1 14 14 14 14 14 14 s sector erase time t whwh2 2.2 60 2.2 60 2.2 60 2.2 60 2.2 60 2.2 60 sec read recovery time before write t ghwl 00 000 0 ns v cc setup time t vcs 50 50 50 50 50 50 s chip programming time 12.5 12.5 12.5 12.5 12.5 12.5 sec output enable setup time t oes 00 000 0 ns output enable hold time (1) t oeh 10 10 10 10 10 10 ns  &! !!  
 
     
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