vishay siliconix si1033x document number: 71428 s10-2544-rev. c, 08-nov-10 www.vishay.com 1 p-channel 20 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet: 1.5 v rated ? high-side switching ? low on-resistance: 8 ? ? low threshold: 0.9 v (typ.) ? fast switching speed: 45 ns (typ.) ? 1.5 v operation ? gate-source esd protected: 2000 v ? compliant to rohs directive 2002/95/ec benefits ? ease in driving switches ? low offset (error) voltage ? low-voltage operation ? high-speed circuits ? low battery voltage operation applications ? drivers: relays, solenoids, lamps, hammers, displays, memories ? battery oper ated systems ? power supply converter circuits ? load/power switching cell phones, pagers product summary v ds (v) r ds(on) ( ? )i d (ma) - 20 8 at v gs = - 4.5 v - 150 12 at v gs = - 2.5 v - 125 15 at v gs = - 1.8 v - 100 20 at v gs = - 1.5 v - 30 marking code: k top view 3 1 d 2 g 2 s 1 5 2 4 6 d 1 s 2 g 1 sc-89 ordering information: si1033x-t1-ge3 (lead (pb)-free and halogen-free) notes: a. surface mounted on fr4 board. b. pulse width limited by ma ximum junction temperature. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol 5 s steady state unit drain-source voltage v ds - 20 v gate-source voltage v gs 5 continuous drain current (t j = 150 c) a t a = 25 c i d - 155 - 145 ma t a = 85 c - 110 - 105 pulsed drain current b i dm - 650 continuous source current (diode conduction) a i s - 450 - 380 maximum power dissipation a t a = 25 c p d 280 250 mw t a = 85 c 145 130 operating junction and storage temperature range t j , t stg - 55 to 150 c gate-source esd rating (hbm, method 3015) esd 2000 v
www.vishay.com 2 document number: 71428 s10-2544-rev. c, 08-nov-10 vishay siliconix si1033x notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics (t a = 25 c, unless otherwise noted) specifications (t a = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. a max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.40 - 1.20 v gate-body leakage i gss v ds = 0 v, v gs = 2.8 v 0.5 1 a v ds = 0 v, v gs = 4.5 v 1 2 zero gate voltage drain current i dss v ds = - 16 v, v gs = 0 v - 1 - 500 na v ds = - 16 v, v gs = 0 v, t j = 85 c - 10 a on-state drain current a i d(on) v ds = - 5 v, v gs = - 4.5 v - 200 ma drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 150 ma 8 ? v gs = - 2.5 v, i d = - 125 ma 12 v gs = - 1.8 v, i d = - 100 ma 15 v gs = - 1.5 v, i d = - 30 ma 20 forward transconductance a g fs v ds = - 10 v, i d = - 150 ma 0.4 s diode forward voltage a v sd i s = - 150 ma, v gs = 0 v - 1.2 v dynamic b total gate charge q g v ds = - 10 v, v gs = - 4.5 v, i d = - 150 ma 1500 pc gate-source charge q gs 150 gate-drain charge q gd 450 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 65 ? i d ? - 150 ma, v gen = - 4.5 v, r g = 10 ? 55 ns rise time t r 30 turn-off delay time t d(off) 60 fall time t f 30 output characteristics 0.0 0.1 0.2 0.3 0.4 0.5 0123456 v gs = 5 v thru 2.5 v 2 v v ds - drain-to-source voltage (v) - drain current (a) i d 1.8 v transfer characteristics 0 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t j = - 55 c 125 c 25 c v gs - gate-to-source voltage (v) - drain current (ma) i d
document number: 71428 s10-2544-rev. c, 08-nov-10 www.vishay.com 3 vishay siliconix si1033x typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. drain current gate charge surge-drain diode forward voltage 0 5 10 15 20 25 0 200 400 600 800 1000 i d - drain current (ma) v gs = 1.8 v v gs = 4.5 v v gs = 2.5 v r ds(on) - on-resistance ( ? ) 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ds = 10 v i d = 150 ma - gate-to-source voltage (v) q g - total gate charge (nc) v gs 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1000 1 v sd - source-to-drain voltage (v) t j = 125 c t j = 25 c t j = - 55 c 10 100 i s - source current (ma) capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 20 40 60 80 100 120 0 4 8 121620 v ds - drain-to-source voltage (v) c rss c oss c iss c - capacitance (pf) v gs = 0 v f = 1 mhz 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 v gs = 4.5 v i d = 150 ma t j - junction temperature (c) (normalized) - on-resistance ( ) r ds(on) v gs = 1.8 v i d = 125 ma 0 10 20 30 40 50 0123456 i d = 150 ma - on-resistance ( ? ) r ds(on) v gs - gate-to-source voltage (v) i d = 125 ma
www.vishay.com 4 document number: 71428 s10-2544-rev. c, 08-nov-10 vishay siliconix si1033x typical characteristics t a = 25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71428 . threshold voltage variance vs. temperature - 0.3 - 0.2 - 0.1 - 0.0 0.1 0.2 0.3 - 50 - 25 0 25 50 75 100 125 i d = 0.25 ma variance (v) v gs(th) t j - tempserature (c) i gss vs. temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 125 t j - temperature (c) i gss - ( a) v gs = 2.8 v bv gss vs. temperature - 7 - 6 - 5 - 4 - 3 - 2 - 1 0 - 50 - 25 0 25 50 75 100 125 t j - temperature (c) bv gss - gate-to-source breakdown voltage (v) normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 500 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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