2sc1959 power silicon np n transistor features audio frequency low power amplifier applications , driver stage amplifier applications, switching applications excellent h fe linearity: h fe(2) =25(min.) : v c e =6.0v, i c =400ma 1 watt amplifier applications complementary to 2sa562tm. maximum ratings symbol rating rating unit v ceo collecto r - emitter voltage 30 v v cbo collecto r - base breakdown voltage 35 v v ebo emitter - base voltage 5.0 v i c collector current 500 ma i b base current 100 ma p c collector power dissipation 500 mw t j operating junction temperature - 55 to +150 o c t stg storage temperature - 55 to +150 o c electrical characteristics @ 2 5 o c unless otherwise specified symbol parameter min typ max units off characteristics i cbo collecto r - base cutoff current (v cb =35vdc, i e =0) --- --- 0.1 uadc i ebo emitter - base cutoff current (v eb =5.0vdc, i c =0) --- --- 0.1 uadc on characteristics h f e - 1 dc current gain* (i c =100madc, v ce =1.0vdc) 70 --- 400 --- h f e - 2 dc current gain* (i c =400madc, v ce =6.0vdc) 25 --- ---- --- v ce(sat) collecto r - emitter saturation voltage (i c =100madc, i b =10madc) --- 0.1 0. 25 vdc v be base - emitter voltage ( i c =100madc, v ce =1.0vdc) --- 0.8 1.0 vdc f t transition frequency ( v ce =6.0vdc, i c =20madc) --- 300 --- m h z c obo collector output capacitance (v cb =6.0vdc, i e =0, f=1.0m h z ) --- 7.0 --- pf note: h fe ( 1) cl a ssification o: 70~140, y: 120~240, gr: 200~400 h fe (1) classification o: 25 (min . ) , y: 40 ( min. )
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% ! " # mcc pin configuration bottom view c b e to - 92 dimensions dim min max min m ax note a .175 .185 4.45 4.70 b .175 .185 4.46 4.70 c .500 --- 12.7 --- d .016 .020 0.41 0.63 e .135 .145 3.43 3.68 g .095 .105 2.42 2.67 a e b c d g ww w . mccsem i .com in che s mm
mcc 2 sc1959 ww w . mccsemi .com
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