part number upc2756t package outline t06 symbols parameters and conditions units min typ max i cc circuit current (no signal) ma 3.5 6.0 8.0 f rf rf frequency response (3 db down from the gain at f rf = 900 mhz, f if = 150 mhz) ghz 0.1 2.0 f if if frequency response (3 db down from the gain at f rf = 900 mhz, f if = 150 mhz) mhz 10 300 cg conversion gain 1 f rf = 900 mhz, f if = 150 mhz db 11 14 17 f rf = 1.6 ghz, f if = 20 mhz db 11 14 17 nf noise figure f rf = 900 mhz, f if = 150 mhz db 10 13 f rf = 1.6 ghz, f if = 20 mhz db 13 16 p sat saturated output power 2 f rf = 900 mhz, f if = 150 mhz dbm -11 -8 f rf = 1.6 ghz, f if = 20 mhz dbm -15 -12 oip 3 ssb output 3rd order intercept point f rf = 0.8~2.0 ghz, f if = 100 mhz dbm 0 iso lo leakage, f lo = 0.8 ~2.0 ghz at rf pin dbm -35 at if pin dbm -23 pn phase noise 3 , f osc = 1.9 ghz dbc/hz -68 r th (j-a) thermal resistance (junction to ambient) free air c/w 620 mounted on a 50 x 50 x 1.6 mm epoxy glass pwb c/w 230 features 3 v silicon mmic l-band frequency down converter upc2756t electrical characteristics (t a = 25 c, z l = zs = 50 w , vcc = 3v) ? wide band operation: rf = 0.1 to 2.0 ghz ? on board oscillator ? low current consumption: 6 ma ? super small t06 package ? tape and reel packaging option available notes: 1. p rf = -40 dbm. 2. p rf = -10 dbm. 3. see application circuit. description the upc2756t is a silicon monolithic integrated circuit which is manufactured using the nesat iii process. the nesat iii process produces transistors with f t approaching 20 ghz. this device was designed as the first down converter for gps and wireless communications. operating on a 3 volt supply, this ic is ideally suited for hand held portable designs. nec's stringent quality assurance and test procedures ensure the highest reliability and performance. california eastern laboratories rf
input if
output lo1 lo2 v cc gnd internal block diagram
test circuit typical performance curves (t a = 25 c unless otherwise specified) absolute maximum ratings 1 (t a = 25 c) symbols parameters units ratings v cc supply voltage v 5.5 p t total power dissipation 2 mw 280 t op operating temperature c -40 to +85 t stg storage temperature c -55 to +150 notes: 1. operation in excess of any one of these parameters may result in permanent damage. 2. mounted on a 50 x 50 x 1.6 mm epoxy glass pwb (t a = +85 c). upc2756t circuit current, icc (ma) circuit current, icc (ma) conversion gain, cg (db) conversion gain, cg (db) circuit current vs. voltage conversion gain and noise figure vs. rf input frequency supply voltage, vcc (v) operating temperature, t op ( c) conversion gain vs. if output frequency circuit current vs. temperature rf input frequency, f rf (ghz) if output frequency, f if (ghz) recommended operating conditions symbols parameters units min typ max v cc supply voltage v 2.7 3.0 3.3 t op operating temperature c -40 +25 +85 0 1 2 3 4 5 6 no input
signal 10 8 6 4 2 0 -40 -20 0 +20 +40 +60 +80 +100 10 8 6 4 2 0 no input signal
v cc = 3.0v 0.5 1.0 1.5 2.0 5 10 15 20 p rfin = -55 dbm
p loin = -10 dbm
f if = 150 mh z
(low-side lo) cg v cc = 3.3v v cc = 3.0v nf v cc = 2.7v v cc = 3.0v v cc = 3.3v 10 15 20 25 v cc = 2.7v 1 2 5 10 20 50 100 300 30 25 20 15 10 5 0 v cc = 3.0v
p rfin = -55 dbm
p loin = -10 dbm
f rf = 1.6 ghz
if coupling = 0.1 uf 0.1 m f 0.1 m f 0.1 m f 0.1 m f c 2 c 1 c 3 c 5 1 2 3 4 5 6 3 v lo 1 gnd rf in lo 2 v cc if out 0.1 m f c 4 lo input if output rf input
5-190 upc2756t scattering parameters typical performance curves (t a = 25 c) upc2756t lo leakage at rf input pin (dbm) lo input frequency, f lo (ghz) lo input frequency (ghz) lo leakage at if output pin (dbm) lo leakage at rf pin vs. lo frequency lo leakage at if pin vs. lo frequency 1.4 1.6 1.8 2.0 0 -10 -20 -30 -40 -50 -60 v cc = 3.0 v
p lo in = -10 dbm 0.8 1.0 1.2 1.4 1.6 0 -10 -20 -30 -40 -50 -60 v cc = 3.0v
p lo in = -10 dbm rf port vcc = 3 v 1: 100 mhz 330.7 w j861.6 w 2: 500 mhz 38.8 w j194.3 w 3: 900 mhz 25.5 w j107.6 w 4: 1500 mhz 20.5 w j60.7 w 5. 1900 mhz 17.9 w j44.2 w 6. 3000 mhz 19.5 w j16.3 w 3 2 1 4 5 5 1 2 3 4 6 rf port vcc = 3 v 1: 50 mhz 21.4 w + j2.4 w 2: 80 mhz 21.8 w + j5.5 w 3: 130 mhz 23.1 w + j9.4 w 4: 240 mhz 27.4 w + j16.3 w 5. 300 mhz 30.6 w + j19.1 w
5-191 application circuit example part number qty ordering information UPC2756T-E3 3k/reel recommended p.c.b. layout (units in mm) 1. rf input 2. gnd 3. lo 1 4. lo 2 5. v cc 6. if output outline dimensions (units in mm) (top view) (bottom view) lead connections
+0.2
-0.3 2.8 1.5 +0.2
-0.1 1 2 3 4 5 6 1.90.2 -0.05
+0.10 0.3 0.130.1 1.1 +0.2
-0.1 0 to 0.1 0.95 0.95 0.8 2.90.2 package outline t06 upc2756t 3 2 1 4 5 6 3 2 1 4 5 6 c1w note: all dimensions are typical unless otherwise specified. 3.10 3 2 1 1.0
min 1.0
min 6 5 4 0.95 0.5 min note: embossed tape, 8 mm wide, pins 1, 2, 3 are in tape pull-out direction. d1
bias 15 k w 15 k w l varactor*
diodes r 1 r 2 c 2 c 1 c 5 3 v c 3 3 2 1 4 5 6 5nh
30 nh 0.1 m f 0.1 m f 0.1 m f 0.1 m f 0.1 m f lo 1 lo 2 gnd vcc rf in if out * recommended varactor diodes: alpha smv1204-4, toshiba 1sv186 or equivalent exclusive north american agent for rf, microwave & optoelectronic semiconductors
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24-hour fax-on-demand: 800-390-3232 (u.s. and canada only) ?internet: http://www.cel.com
printed in usa on recycled paper -1/97
data subject to change without notice
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