vishay siliconix 2n7002k document number: 71333 s09-0857-rev. e, 18-may-09 www.vishay.com 1 n-channel 60-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? low on-resistance: 2 ? low threshold: 2 v (typ.) ? low input capacitance: 25 pf ? fast switching speed: 25 ns ? low input and output leakage ? trenchfet ? power mosfet ? 2000 v esd protection ? compliant to rohs directive 2002/95/ec benefits ? low offset voltage ? low-voltage operation ? easily driven without buffer ? high-speed circuits ? low error voltage applications ? direct logic-level interface: ttl/cmos ? drivers: relays, solenoids, lamps, hammers, display, memories, transistors, etc. ? battery oper ated systems ? solid-state relays product summary v ds (v) r ds(on) ( )i d (ma) 60 2 at v gs = 10 v 300 t o -236 sot -23 1 2 3 top view 2n7002k (7k)* * marking code g s d ordering information: 2n7002k-t1 2n7002k-t1-e3 (lead (pb)-free) 2N7002K-T1-GE3 (lead (pb)-free and halogen-free) notes: a. pulse width limited by ma ximum junction temperature. b. surface mounted on fr4 board. * pb containing terminations are not rohs compliant, exemptions may apply. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) b t a = 25 c i d 300 ma t a = 100 c 190 pulsed drain current a i dm 800 power dissipation b t a = 25 c p d 0.35 w t a = 100 c 0.14 maximum junction-to-ambient b r thja 350 c/w operating junction and storage temperature range t j, t stg - 55 to 150 c
www.vishay.com 2 document number: 71333 s09-0857-rev. e, 18-may-09 vishay siliconix 2n7002k notes: a. for design aid only, not subject to production testing. b. pulse test: pw 300 s duty cycle 2 %. c. switching time is essentially independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t a = 25 c, unless otherwise noted parameter symbol test conditions limits unit min. typ. a max. static drain-source breakdown voltage v ds v gs = 0 v, i d = 10 a 60 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 12.5 gate-body leakage i gss v ds = 0 v, v gs = 20 v 10 a v ds = 0 v, v gs = 15 v 1 v ds = 0 v, v gs = 10 v 150 na v ds = 0 v, v gs = 10 v, t j = 85 c 1000 v ds = 0 v, v gs = 5 v 100 zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v 1 a v ds = 60 v, v gs = 0 v , t j = 125 c 500 on-state drain current a i d(on) v gs = 10 v, v ds = 7.5 v 800 ma v gs = 4.5 v, v ds = 10 v 500 drain-source on-resistance a r ds(on) v gs = 10 v, i d = 500 ma 2 v gs = 4.5 v, i d = 200 ma 4 forward transconductance a g fs v ds = 10 v, i d = 200 ma 100 ms diode forward voltage v sd i s = 200 ma, v gs = 0 v 1.3 v dynamic a total gate charge q g v ds = 10 v, v gs = 4.5 v i d ? 250 ma 0.4 0.6 nc input capacitance c iss v ds = 25 v, v gs = 0 v f = 1 mhz 30 pf output capacitance c oss 6 reverse transfer capacitance c rss 2.5 switching a, b, c tu r n - o n t i m e t d(on) v dd = 30 v, r l = 150 i d ? 200 ma, v gen = 10 v, r g = 10 25 ns turn-off time t d(off) 35
document number: 71333 s09-0857-rev. e, 18-may-09 www.vishay.com 3 vishay siliconix 2n7002k typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0.0 0.2 0.4 0.6 0.8 1 . 0 012 345 v ds - drain-to-source voltage (v) - drain current (a) i d v gs = 10 v 3 v 5 v 4 v 6 v 7 v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4 . 0 0 200 400 600 800 1000 i d - drain current (ma) v gs = 4.5 v v gs = 10 v - on-resistance ( ) r ds(on) 0 1 2 3 4 5 6 7 0.0 0.1 0.2 0.3 0.4 0.5 0.6 v ds = 10 v i d = 250 ma - gate-to-source voltage (v) q g - total gate charge (nc) v gs transfer characteristics capacitance on-resistance vs. junction temperature 0 300 600 900 1200 0123456 v gs - gate-to-source voltage (v) - drain current (ma) i d t j = - 55 c 125 c 25 c 0 8 16 24 32 40 0 5 10 15 20 25 v ds - drain-to-source voltage (v) c - capacitance (pf) c rss c oss c iss v gs = 0 v 0.0 0.4 0.8 1.2 1.6 2 . 0 - 50 - 25 0 2 5 5 0 7 5 100 125 150 t j - junction temperature (c) v gs = 10 v at 500 ma v gs = 4.5 v at 200 ma (normalized) - on-resistance r ds(on)
www.vishay.com 4 document number: 71333 s09-0857-rev. e, 18-may-09 vishay siliconix 2n7002k typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage variance over temperature 1.2 1.5 1 100 1000 0.0 0.3 0.6 0.9 t j = 125 c v sd - source-to-drain voltage (v) - source current (a) i s 10 t j = - 55 c v gs = 0 v t j = 25 c variance (v) v gs(th) - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0 . 4 - 50 - 25 0 2 5 5 0 7 5 100 125 150 i d = 250 a t j - junction temperature (c) on-resistance vs. gate-source voltage single pulse power, junction-to-ambient 0 1 2 3 4 5 02468 10 v gs - gate-to-source voltage (v) i d = 500 ma i d = 200 ma - on-resistance ( ) r ds(on) 0.01 0 1 2.5 3 100 600 0.1 power ( w ) time (s) 1.5 2 0.5 1 10 t a = 25 c normalized thermal transient impedance, junction-to-ambient 10 10 -3 10 -2 1 1 0 600 10 -1 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized ef fective t ransient thermal impedance 1. duty cycle, d = 2. per unit base = r th ja = 350 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
vishay siliconix 2n7002k document number: 71333 s09-0857-rev. e, 18-may-09 www.vishay.com 5 typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71333 . normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 1 10 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized e f f ective t ransient thermal impedance
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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