c-band internally-matched power gaas fets (imfets) 6.4 to 7.2 ghz technical data description the hewlett-packard im6472-xl series of internally-matched gaas power fets, or imfets? is designed to provide efficient power amplification in the 6.4 to 7.2 ghz communications band. designed for satcom and point- to-point radio communications, these products offer the system designer benefits associated with higher output power, gain, and net power-added efficiency. [1] typi- cal output power of the im6472-4l exceeds 4 watts, with similar performance advantages for the IM6472-8L, -16l and -32l models. higher levels of gain and operat- ing efficiency are the result of leading edge gaas mesfet technology developed at hp. hp imfets are manufactured using hybrid construction tech- niques, combining gaas power mesfets with low loss, thin-film substrates. internal 50 ohm matching networks eliminate the rf matching, handling, and die attach difficulties usually associ- ated with using large geometry, high power chip devices. auto- mated assembly and test proce- c21a features ? high output power: im6472-4l: 36.5 dbm typ. (4.5w) IM6472-8L: 39.5 dbm typ. (9w) im6472-16l: 42.5 dbm typ. (18w) im6472-32l: 45.0 dbm typ. (32w) ? high power-added efficiency: up to 40% ? high linearity: -45 dbc imd 3 @ specified output single carrier level ? superior gain flatness: 0.5 db max. ? linear, class a operation ? input and output internally matched to 50 ohms ? industry compatible packages applications ? solid state power amplifiers for satellite earth station uplink ? digital point-to-point and point-to-multipoint communications c24a dures provide excellent unit-to- unit repeatability and uniformity for easier cascading. hp imfets are housed in copper/ceramic packages to allow for maximum heat transfer from the gaas fet device to the heatsink. the sealing process used is a commer- cial standard, non-hermetic epoxy, proven for environmental protec- tion. each unit conforms to the industrys standard outline dimensions. electrical perfor- mance is guaranteed at +25 c. note: 1. net power added efficiency = (p out - p in )/(i ds x v ds ), where p out and p in are in watts. im6472-4l IM6472-8L im6472-16l im6472-32l
2 im6472-xl absolute maximum ratings (t flange = 25oc) symbols parameters units ratings im6472-4l IM6472-8L im6472-16l im6472-32l v ds drain to source voltage v 15 15 15 15 v gs gate to source voltage v -10 -10 -10 -10 v gd gate to drain voltage v -15 -15 -15 -15 i ds drain current a i dss i dss i dss i dss i grf gate current ma 25 50 100 200 t ch max. channel temperature oc 175 175 175 175 t stg storage temperature oc -65 to +150 -65 to +150 -65 to +150 -65 to +150 p t [1] total power dissipation w 31 38 83 150 im6472-xl electrical characteristics (t flange = 25oc) part number im6472-4l IM6472-8L symbols parameters units min. typ. max. min. typ. max. test conditions p1db output power @ 1 db gain compression i dsq = 1.0 a dbm 36.0 36.5 i dsq = 2.0 a dbm 39.0 39.5 h add power-added efficiency % 40 38 @ 1 db gain compression i ds drain current @ p1db a 1.1 1.5 2.2 3.0 g1db power gain @ 1 db gain db 8.5 9.5 7.5 8.5 compression d g gain flatness db 0.3 0.5 0.3 0.5 imd 3 3rd order intermod distortion p out scl [2] i dsq 26 dbm 1.0 a dbc -45 -42 29 dbm 2.0 a dbc -45 -42 i dss saturated drain current a 1.5 2.5 3.5 3.0 5.0 7.0 v p pinch off voltage i ds = 63 ma v -4.5 -3.0 -1.5 i ds = 125 ma v -4.5 -3.0 -1.5 bv gdo gate-drain breakdown voltage i gd = -6 ma v -16.0 i gd = -12 ma v -16.0 g m transconductance i ds = 1.0 a s 1.3 i ds = 2.0 a s 2.5 r th thermal resistance oc/w 4.9 4.0 (channel to flange) d t temperature rise channel to oc 49 80 flange; dc on and rf off case style c21a notes: 1. see application note, an 1083 2. scl: single carrier level v ds = 10.0 v freq.= 6.4 C 7.2 ghz zs = zl = 50 ohms r g = 20 w v ds = 10.0 v two equal tone test f 1 = 7.19 ghz f 2 = 7.20 ghz i. r. method i. r. method; v ds = 10.0 v i ds = 1 and 2 a v ds = 2.5 v v ds = 2.5 v v gs = 0 v; v ds = 2.5 v
3 im6472-xl electrical characteristics (t flange = 25oc) part number im6472-16l im6472-32l symbols parameters units min. typ. max. min. typ. max. test conditions p1db output power @ 1 db gain compression i dsq = 4.0 a dbm 41.5 42.5 i dsq = 8.0 a dbm 44.5 45.0 h add power-added efficiency % 37 31 @ 1 db gain compression i ds drain current @ p1db a 4.4 6.0 8.8 12.0 g1db power gain @ 1 db gain db 7.0 8.0 6.0 6.5 compression d g gain flatness db 0.3 0.5 0.3 0.5 imd 3 3rd order intermod distortion p out scl [1] i dsq 31.5 dbm 4.0 a dbc -45 -42 34.5 dbm 8.0 a dbc -45 -42 i dss saturated drain current a 6.0 10.0 14.0 12.0 20.0 28.0 v p pinch off voltage i ds = 250 ma v -4.5 -3.0 -1.5 i ds = 500 ma v -4.5 -3.0 -1.5 bv gdo gate-drain breakdown voltage i gd = -25 ma v -16.0 i gd = -50 ma v -16.0 g m transconductance i ds = 4.0 a s 5.0 i ds = 8.0 a s 10.0 r th thermal resistance oc/w 1.8 1.0 (channel to flange) d t temperature rise channel to oc 72 80 flange; dc on and rf off case style c24a note: 1. scl: single carrier level v ds = 10.0 v freq.= 6.4 C 7.2 ghz zs = zl = 50 ohms r g = 5 w v ds = 10.0 v two equal tone test f 1 = 7.19 ghz f 2 = 7.20 ghz i. r. method i. r. method; v ds = 10.0 v i ds = 4 and 8 a v ds = 2.5 v v ds = 2.5 v v gs = 0 v; v ds = 2.5 v
4 im6472-4l and -8l typical performance (t flange = 25oc) frequency (ghz) p 1db (dbm) g 1db (db) figure 1. im6472-4l output power,
gain vs. frequency. 6 8 10 12 flange temperature ( c) power dissipation (watts) figure 2. im6472-4l maximum total
power dissipation vs. flange temperature. 0 5 10 15 20 25 30 35 40 45 50 200 175 150 125 100 75 50 25 flange temperature ( c) power dissipation (watts) figure 4. IM6472-8L maximum total
power dissipation vs. flange temperature. 0 5 10 15 20 25 30 35 40 45 50 200 175 150 125 100 75 50 25 v ds = 10 v
i ds = 1.1 a frequency (ghz) p 1db (dbm) g 1db (db) figure 3. IM6472-8L output power,
gain vs. frequency. 25 30 35 40 45 50 7.5 8.5 9.5 10.5 11.5 12.5 7.3 7.1 6.9 6.7 6.5 6.3 v ds = 10 v
i ds = 2.2 a p 1db g 1db p 1db g 1db 7.3 7.1 6.9 6.7 6.5 6.3 34 36 38 40
5 im6472-16l and -32l typical performance (t flange = 25oc) frequency (ghz) p 1db (dbm) g 1db (db) figure 7. im6472-32l output power,
gain vs. frequency. 40 42 44 46 48 50 6 7 8 9 10 11 7.3 7.1 6.9 6.7 6.5 6.3 v ds = 10 v
i ds = 8.8 a p 1db g 1db frequency (ghz) p 1db (dbm) g 1db (db) figure 5. im6472-16l output power,
gain vs. frequency. 35 37 39 41 43 45 7 8 9 10 11 12 7.3 7.1 6.9 6.7 6.5 6.3 flange temperature ( c) power dissipation (watts) figure 6. im6472-16l total power
dissipation vs. flange temperature. 0 10 20 30 40 50 60 70 80 90 100 200 175 150 125 100 75 50 25 vds = 10 v
ids = 4.4 a p 1db g 1db flange temperature ( c) power dissipation (watts) figure 8. im6472-32l maximum total
power dissipation vs. flange temperature. 0 20 40 60 80 100 120 140 160 180 200 220 200 175 150 125 100 75 50 25
case dimensions 21.0 ?0.2 17.0 ?0.2 10.7 12.0 0.2 max 5.0 max 0.1 1.6 2.6 ?0.2 +0.1 ?.05 12.9 ?0.2 6.45 ?0.15 4.70 ?0.13 2.5 ?0.5
both leads 0.6 ?0.1 drain gate source r1.6, 2 places c1.2, 4 places 24.0 ?0.2 20.4 ?0.2 16.0 16.0 0.2 max 5.5 max 0.1 1.6 2.4 ?0.2 +0.1 ?.05 17.4 ?0.2 8.0 ?0.13 2.5 ?0.5
both leads 0.6 ?0.1 drain gate source r1.2, 4 places c2.0, 4 places
notes (unless otherwise specified):
1. dimensions are specified in mm for technical assistance or the location of your nearest hewlett-packard sales office, distributor or representative call: americas/canada: 1-800-235-0312 or 408-654-8675 far east/australasia: call your local hp sales office. japan: (81 3) 3335-8152 europe: call your local hp sales office. data subject to change. copyright ? 1997 hewlett-packard co. obsoletes 5965-1015e (7/96) printed in u.s.a. 5965-7395e (3/97) c24a package outline im6472-16l and im6472-32l c21a package outline im6472-4l and IM6472-8L
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