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?2009 silicon storage technology, inc. s71329-05-000 11/10 1 the sst logo and superflash are registered trademarks of silicon storage technology, inc. these specifications are subject to change without notice. data sheet features: ? suitable gain: ? typically 14 db gain across 2.4?2.5 ghz ? low-noise figure: ? typically 1.55 db across 2.4?2.5 ghz ? iip3: ? >1dbm across 2.4?2.5 ghz ? low-current consumption ? 10-12 ma across 2.4?2.5 ghz ?50 input/output matched ? packages available ? 6-contact uqf n?3mmx1.6mm ? all non-pb (lead-free) devices are rohs compliant applications: ? wlan ? bluetooth ? wireless network product description the sst12ln01 is a cost effective low-noise amplifier (lna) which requires no external rf-matching compo- nents. this device is based on the 0.5m gaas phemt technology, and complies with 802.11 b/g applications. sst12ln01 provides high-performance, low-noise, and moderate-gain operation within the 2.4?2.5 ghz frequency band. across this frequency band, the lna typically pro- vides 14 db gain and 1.55 db noise figure. this lna cell is designed with a self dc-biasing scheme, which maintains low dc current consumption, nominally at 11 ma, during operation. optimum performance is achieved with only a single power supply, and no external bias resistors or networks are required. the input and out- put ports are single-ended 50 matched. rf ports are also dc isolated requiring no dc blocking capacitors or match- ing components. the sst12ln01 is offered in a 6-contact uqfn package. see figure 2 for pin assignments and table 1 for pin descriptions. 2.4-2.5 ghz low-noise amplifier sst12ln01 sst12l012.4-2.5 ghz low-noise amplifier
data sheet 2.4-2.5 ghz low-noise amplifier sst12ln01 ?2009 silicon storage technology, inc. s71329-05-000 11/10 2 functional blocks figure 1: functional block diagram 6 5 4 1 2 3 1329 f1.0 lna
data sheet 2.4-2.5 ghz low-noise amplifier sst12ln01 3 ?2009 silicon storage technology, inc. s71329-05-000 11/10 pin assignments figure 2: pin assignments for 16-contact uqfn pin descriptions table 1: pin description symbol pin no. pin name type 1 1. i=input, o=output function gnd 0 ground nc 1 no connection unconnected pin rfin 2 i 2.4g rf input nc 3 no connection unconnected pin nc 4 no connection unconnected pin rfout 5 o 2.4g rf output vdd 6 power supply pwr t1.0 1329 rf out nc v dd nc rf in nc 6 5 4 1 2 3 1329 6-uqfn p1.0 rf and dc gnd 0 top view (contacts facing down)
data sheet 2.4-2.5 ghz low-noise amplifier sst12ln01 ?2009 silicon storage technology, inc. s71329-05-000 11/10 4 electrical specifications the ac and dc specifications for the power amplifier interface signals. refer to table 2 for the dc voltage and current spec- ifications. refer to figure 3 for the rf performance. absolute maximum stress ratings (applied conditions greater than those listed under ?absolute maximum stress ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. exposure to absolute maximum stress rating conditions may affect device reliability.) input power to pin 2 (p in )..................................................................0bm average output power (p out ) 1 .............................................................9dbm 1. never measure with cw source. pulsed single-tone source with <50% duty cycle is recommended. exceeding the maximum rating of average output power could cause permanent damage to the device. supply voltage at pin 6 (v dd ) ....................................................... -0.3v to +4.6v dc supply current (i cc ) ..................................................................14ma operating temperature (t a ) ....................................................... -40oc to +85oc storage temperature (t stg )...................................................... -40oc to +120oc maximum junction temperature (t j )....................................................... +150oc surface mount solder reflow temperature ....................................... 260c for 10 seconds operating range range ambient temp v cc extended -20 to +80oc 2.9?3.5v table 2: dc electrical characteristics symbol parameter min. typ max. unit v cc supply voltage at pin 6 3.3 v i cc supply current 2.4 ? 2.5 ghz 11 ma t2.0 1329 table 3: ac electrical characteristics for configuration symbol parameter min. typ max. unit f l-u frequency range 2400 2550 mhz g small signal gain, 2.4 ? 2.55 ghz 14 db nf noise figure, 2.4 ? 2.55 ghz 1.55 db iip3 2.4 ? 2.55 ghz 1 3 dbm t3.2 1329
data sheet 2.4-2.5 ghz low-noise amplifier sst12ln01 5 ?2009 silicon storage technology, inc. s71329-05-000 11/10 typical performance characteristics test conditions: v ddl = 3.0v, t a = 25c, unless otherwise specified figure 3: s-parameters 1329-sparm1.2 s11 verus frequency -40 -30 -20 -10 0 10 20 012345678910 frequency (ghz) s11 (db) s12 verus frequency -60 -50 -40 -30 -20 -10 0 10 20 012345678910 frequency (ghz) s12 (db) s21 verus frequency -40 -30 -20 -10 0 10 20 012345678910 frequency (ghz) s21 (db) s22 verus frequency -40 -30 -20 -10 0 10 20 012345678910 frequency (ghz) s22 (db)
data sheet 2.4-2.5 ghz low-noise amplifier sst12ln01 ?2009 silicon storage technology, inc. s71329-05-000 11/10 6 figure 4: noise figure versus frequency figure 5: frequency response of gain (s21) for three temperatures noise figure versus frequency 0 0.5 1 1.5 2 2.5 3 3.5 1.5 2 2.5 3 frequency (ghz) noise figure (db) room temp 80 degree c -10 degree c 1329 f4.1 1329 f7.0 -10 -5 0 5 10 15 20 1234 frequency (ghz) gain (db) room temp temp = 80 degree temp = -10 degree
data sheet 2.4-2.5 ghz low-noise amplifier sst12ln01 7 ?2009 silicon storage technology, inc. s71329-05-000 11/10 figure 6: input p1db versus frequency 1329 f5.1 ip1db versus frequency -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 2 2.2 2.4 2.6 2.8 3 frequency (ghz) ip1db vdd = 3.3v vdd = 3.0v vdd = 3.6v
data sheet 2.4-2.5 ghz low-noise amplifier sst12ln01 ?2009 silicon storage technology, inc. s71329-05-000 11/10 8 figure 7: input ip3 versus frequency figure 8: typical application circuit 1329 f6.1 iip3 versus frequency 0 1 2 3 4 5 6 7 8 9 10 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 frequency(ghz) iip3 (dbm) vdd = 3.3v vdd = 3.0v vdd = 3.6v rf out v dd rf in 6 5 4 1 2 3 1329 app circui t-1.2 50 0.1 f 50 dc block dc block
data sheet 2.4-2.5 ghz low-noise amplifier sst12ln01 9 ?2009 silicon storage technology, inc. s71329-05-000 11/10 product ordering information valid combinations for sst12ln01 sst12ln01 -qu6f sst12ln01 evaluation kits sst12ln01 -qu6f-k note: valid combinations are those products in mass production or will be in mass production. consult your sst sales representative to confirm availability of valid combinations and to determine availability of new combinations. sst12ln 01 - qu6 f sst xx l n xx - xx x x environmental attribute f 1 = non-pb contact (lead) finish package modifier 6 = 6 contact package type qu = uqfn product family identifier product type n = low-noise amplifier voltage l = 3.0-3.6v frequency of operation 2 = 2.4 ghz product line 1 = sst communications 1. environmental suffix ?f? denotes non-pb solder. sst non-pb solder devices are ?rohs compliant?.
data sheet 2.4-2.5 ghz low-noise amplifier sst12ln01 ?2009 silicon storage technology, inc. s71329-05-000 11/10 10 packaging diagrams figure 9: 6-contact ultra-thin quad flat no-lead (uqfn) sst package code: qu6 note: 1. although many dimensions are simliar to those of jedec jep95 mo-220i, this specific package is not registered . 2. the external paddle is electrically connected to the die back-side and possibly to certain v ss leads. this paddle can be soldered to the pc board it is suggested to connect this paddle to the v ss of the unit. connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 3. untoleranced dimensions are nominal target dimensions. 4. all linear dimensions are in millimeters (max/min). see note 2 6-uqfn-3x1.6-qu6-1.0 0.5 bsc 0.475 0.075 0.15 1.60 0.10 3.00 0.10 0.05 max 0.60 0.50 pin 1 top view bottom view side view 1mm 0.4 0.25 1 0.3 1.80 1.25 0.425 0.425 0.25 0.25 see paddle details exposed paddle detail
data sheet 2.4-2.5 ghz low-noise amplifier sst12ln01 11 ?2009 silicon storage technology, inc. s71329-05-000 11/10 table 4: revision history revision description date 00 ? initial release of data sheet sep 2006 01 ? updated ?features:? on page 1 sep 2007 02 ? revised product description on page 1 ? change suitable gain to 14 db globally ? changed low-noise figure 1.55 db globally ? changes low-current consumption to 10-12 ma ? edited table 2, dc electrical characteristics and table 3, ac electrical character- istics on page ? replaced figures 3 through 7, pages 5 through 8 ? edited figure 8, page 8 ? added figure 5 on page 8 jun 2008 03 ? updated ?? on page 11 feb 2009 04 ? updated document status from ?preliminary specifications? to ?data sheet? dec 2009 05 ? revised iipe values in features on page 1 and table 3 on page 4 ? changed definition of ?f? environmental attribute in ?product ordering information? on page 9 nov 2010 silicon storage technology, inc www.superflash.com or www.sst.com

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