triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com advance product information november 9, 2004 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. high power dc - 18ghz spdt fet switch TGS2306-EPU key features and performance ? dc - 18 ghz frequency range ? 29 dbm input p1db @ v c = -5v ? > 30 db isolation ? <1 nsec switching speed ? control voltage application from either side of mmic ? -3v or -5v control voltage ? 0.5m phemt 3mi technology ? chip dimensions: 0.83 x 1.11 x 0.10 mm (0.033 x 0.044 x 0.004 inches) preliminary measured performance v c1 = 0v; v c2 = -5v -10 -8 -6 -4 -2 0 02468101214161820 frequency (ghz) insertion loss (db) -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 isolation, return loss (db) s21 s11 s22 s13 desription the triquint TGS2306-EPU is a gaas single-pole, double -throw (spdt) fet monolithic switch de signed to operate over the dc to 18ghz frequency range. this switch not on ly maintains a high isolation loss and a low insertion loss across a wide bandwidth, but also has very low power consumption and high power handling of 29dbm or greater input p1db at v c = 5v. these advantages, along with the small size of the chip, make the TGS2306-EPU ideal for use in high-speed radar and communication applications.
triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com advance product information november 9, 2004 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGS2306-EPU table ii truth table selected rf output v c1 v c2 rf out 1 0 v -5 v rf out 2 -5 v 0 v table i maximum ratings symbol parameter value notes v c control voltage -7 v 1/ 2 / i c control current 2.25 ma 1/ 2 / p in input continuous wave power tbd 1/ 2 / p d power dissipation tbd 1/ 2 / 3 / t ch operating channel temperature 150 0 c4/ t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings represent the maximum operable values for this device 2/ combinations of supply vo ltage, supply current, input po wer, and output power shall not exceed p d at a package base temperature of 70 c 3/ when operated at this bias conditio n with a baseplate temperature of 70 c, the mttf is reduced to 1.0e+6 hours 4/ junction operating temperatur e will directly affect the dev ice median time to failure (mttf). for maximum life, it is re commended that junction temperatures be maintained at the lowest possible levels.
triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com advance product information november 9, 2004 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGS2306-EPU fixtured measurement -5.0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 02468101214161820 frequency (ghz) insertion loss (db) -30 -25 -20 -15 -10 -5 0 0 2 4 6 8 10 12 14 16 18 20 frequency (ghz) return loss (db) s11 s22
triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com advance product information november 9, 2004 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGS2306-EPU fixtured measurement -40 -35 -30 -25 -20 -15 -10 -5 0 0 2 4 6 8 10 12 14 16 18 20 frequency (ghz) isolation (db) -5.0 -4.5 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 02468101214161820 frequency (ghz) insertion loss (db) -35degc +25degc +85degc
triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com advance product information november 9, 2004 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. time=0 off to on 100 psec/div on to off 50 psec/div switching speed measurements 50% control signal to 90% rf = 480 psec 50% control signal to 10% rf = 320 psec measurement performed using a pulse ge nerator with 100 psec rise/fall times driving 50 ohm transmission lines that were terminated in 50 ohms and attached to the vc1 and vc2 control inputs. pulse generator provided complementary outputs.
triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com advance product information november 9, 2004 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGS2306-EPU mechanical drawing .00 [0.000] .11 [0.004] .24 [0.009] .68 [0.027] .83 [0.033] .00 [0.000] .11 [0.004] .55 [0.022] .99 [0.039] 1.11 [0.044] 1 23 4 5 6 7 units: millimeters [inches] thickness: 0.10 [0.004] (reference only) chip edge to bond pad di mensions are shown to center of bond pads. chip size toleran ce: 0.05 [0.002] rf ground through backside bond pad #1 bond pad #2 bond pad #3 bond pad #4 bond pad #5 bond pad #6 bond pad #7 rf input vc1 vc2 rf output 1 rf output 2 vc2 vc1 0.10 x 0.20 0.10 x 0.10 0.10 x 0.10 0.20 x 0.10 0.20 x 0.10 0.10 x 0.10 0.10 x 0.10 [0.004 x 0.008] [0.004 x 0.004] [0.004 x 0.004] [0.008 x 0.004] [0.008 x 0.004] [0.004 x 0.004] [0.004 x 0.004]
triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com advance product information november 9, 2004 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. chip assembly & bonding diagram gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGS2306-EPU for optimum insertion loss and return lo ss, a single 0.001? bond wire of length 35 mils should be used. this will be approximatel y 0.42nh. differences in bondwire length will have an im pact on switch performance. v c1 & v c2 can be applied from either side of the mmic. dc blocks are required for t he rf input and output.
triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com advance product information november 9, 2004 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 c. (30 seconds maximum) ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? maximum stage temperature is 200 c. assembly process notes TGS2306-EPU
|
