jiangsu changjiang electron ics technology co., ltd to-92l plastic-encapsulate transistors 2SB892 transistor (pnp) feature z power supplies, relay drivers, lamp drivers, and automotive wiring z low saturation voltage. z large current capacity and wide aso. maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -60 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -6 v i c collector current -continuous -2 a p c collector dissipation 0.75 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v(br) cbo i c = -100 a , i e =0 -60 v collector-emitter breakdown voltage v(br) ceo i c = -1ma , i b =0 -50 v emitter-base breakdown voltage v(br) ebo i e =- 100 a, i c =0 -6 v collector cut-off current i cbo v cb = -50v , i e =0 -0.1 a emitter cut-off current i ebo v eb = -4v , i c =0 -0.1 a h fe(1) v ce =-2v, i c = -100ma 100 560 dc current gain h fe(2) v ce =-2v, i c = -1.5a 40 collector-emitter saturation voltage v ce(sat) i c = -1a, i b = -50ma -0.4 v base-emitter saturation voltage v be(sat) i c = -1a, i b = -50ma -1.2 v transition frequency f t v ce = -10 v, i c = -50ma 150 mhz classification of h fe(1) rank r s t u range 100-200 140-280 200-400 280-560 to-92l 1. emitter 2. collector 3. base 123
typical characteristics 2SB892
|
