vishay siliconix tp0202k document number: 71609 s-83053-rev. e, 29-dec-08 www.vishay.com 1 p-channel 30-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 available ? trenchfet ? power mosfet ? high-side switching ? low on-resistance: 1.2 (typ.) ? low threshold: - 2 v (typ.) ? fast swtiching speed: 14 ns (typ.) ? low input capacitance: 31 pf (typ.) ? 2000 v esd protection applications ? drivers: relays, solenoids, lamps, hammers, display, memories, transistors, etc. ? battery operated systems ? power supply converter circuits ? solid-state relays benefits ? ease in driving switches ? low offset (error) voltage ? low-voltage operation ? high-speed circuits ? easily driven without buffer notes: a. surface mounted on fr4 board. b. pulse width limited by ma ximum junction temperature. product summary v ds (v) r ds(on) ( )v gs(th) (v) i d (ma) q g (typ.) - 30 1.4 at v gs = - 10 v - 1.3 to - 3.0 - 385 1000 3.5 at v gs = - 4.5 v - 1.3 to - 3.0 - 240 marking code: 2k wll 2k = part nu m b er code for tp0202k w = week code ll = lot tracea b ility to-236 (sot-23) to p v ie w 2 1 s d g 3 orderin g information: tp0202k-t1-e3 (lead (p b )-free) TP0202K-T1-GE3 (lead (p b )-free and halogen-free) absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) a t a = 25 c i d - 385 ma t a = 85 c - 280 pulsed drain current b i dm - 750 power dissipation a t a = 25 c p d 350 m w t a = 85 c 185 maximum junction-to-ambient a r thja 350 c/ w operating junction and storage temperature range t j, t stg - 55 to 150 c
www.vishay.com 2 document number: 71609 s-83053-rev. e, 29-dec-08 vishay siliconix tp0202k notes: a. pulse test: p w 300 s duty cycle 2 %. b. switching time is essentiall y independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t a = 25 c, unless otherwise noted parameter symbol test conditions limits unit min. typ. max. static drain-source breakdown voltage v ds v gs = 0 v, i d = - 100 a - 30 - 38 v gate-threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.3 - 2 - 3.0 gate-body leakage i gss v ds = 0 v, v gs = 5 v 50 na v ds = 0 v, v gs = 10 v 300 zero gate voltage drain current i dss v ds = - 30 v, v gs = 0 v - 100 v ds = - 30 v, v gs = 0 v, t j = 85 c - 10 a on-state drain current a i d(on) v gs = - 10 v, v ds = - 10 v - 500 ma drain-source on-resistance a r ds(on) v gs = - 4.5 v, i d = - 50 ma 2.1 3.5 v gs = - 10 v, i d = - 500 ma 1.25 1.4 forward transconductance a g fs v ds = - 5 v, i d = - 200 ma 315 ms diode forward voltage a v sd i s = - 250 ma, v gs = 0 v - 1.2 v dynamic total gate charge q g v ds = - 16 v, v gs = - 10 v i d ? - 200 ma 1000 pc gate-source charge q gs 225 gate-drain charge q gd 175 input capacitance c iss v ds = - 15 v, v gs = 0 v f = 1 mhz 31 pf output capacitance c oss 11 reverse transfer capacitance c rss 4 switching b tu r n - o n t i m e t d(on) v dd = - 15 v, r l = 75 i d ? - 200 ma, v gen = - 10 v, r g = 6 9 ns t r 6 turn-off time t d(off) 30 t f 20
document number: 71609 s-83053-rev. e, 29-dec-08 www.vishay.com 3 vishay siliconix tp0202k typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. gate-source voltage capacitance 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 012345 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs = 10 v 3.5 v 3 v 4.5 v 6 v 8 v 7 v 5.5 v 5 v 4 v 0 4 8 12 16 20 04 8 12 16 20 v gs - gate -to-so u rce v oltage ( v ) v gs = 4.5 v v gs = 10 v r ds(on) - on-resistance ( ) 0 10 20 30 40 50 04 8 12 16 20 v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c rss c oss c iss v gs = 0 v f = 1 mhz transfer characteristics on-resistance vs. drain current gate charge 0 200 400 600 8 00 1000 1200 0123456 v gs - gate-to-so u rce v oltage ( v ) i d - drain c u rrent (ma) t j = - 55 c 125 c 25 c 0 2 4 6 8 10 12 14 0 200 400 600 8 00 1000 i d - drain c u rrent (ma) v gs = 4.5 v v gs = 10 v r ds(on) - on-resistance ( ) 0 2 4 6 8 10 12 14 16 0 200 400 600 8 00 1000 1200 1400 160 0 i d = 200 ma - gate-to-so u rce v oltage ( v ) q g - total gate charge (pc) v gs v ds = 10 v v ds = 16 v
www.vishay.com 4 document number: 71609 s-83053-rev. e, 29-dec-08 vishay siliconix tp0202k typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71609 . on-resistance vs. junction temperature threshold voltage variance over temperature 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 t j - j u nction temperat u re (c) v gs = 10 v at 200 ma v gs = 4.5 v at 50 ma r ds(on) - on-resistance ( n ormalized) v ariance ( v ) v gs(th) - 0.3 - 0.2 - 0.1 - 0.0 0.1 0.2 0.3 0.4 0.5 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a t j - j u nction temperat u re (c) source-drain diode forward voltage i gss vs. temperature 1.2 1.5 1 100 1000 0.00 0.3 0.6 0.9 t j = 25 c t j = 150 c v sd - so u rce-to-drain v oltage ( v ) i s - so u rce c u rrent (a) 10 t j = - 55 c v gs = 0 v - (na) i gss t j - j u nction temperat u re (c) 125 150 1 100 1000 25 50 75 100 10 v gs = 10 v v gs = 5 v normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 0 0 6 0 1 1 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are wa v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1. d u ty cycle, d = 2. per unit base = r thja = 350 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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