dionics, inc. phone: (516) 997 - 7474 65 rushmore street fax: (516) 997 - 7479 westbury, ny 11590 website: www.dionics - usa.com dig - 11 - 8 - 30 - dd dig - 12 - 8 - 30 - dd dig - 22 - 8 - 30 - dd photovoltaic mosfet drivers with dynamic discharge* *us patent 4,931,656 features: ? fast turn off, active gate discharge ? dielectrically isolated ? logic circuit compatibility ? high open circuit voltage ? high operating temperature ? fast response time ? high i solation resistance ? excellent input/output linearity ? self limiting gate voltage applications: ? gate drive for mos devices ? gate drive for scr ? solid - state relays ? interface between logic circuits & external loads ? a.t.e. (automatic test equipment) ? switching eq uipment ? isolation amplifiers ? load control from microprocessor i/o ports ? thermocouple open detectors description: the photovoltaic mosfet - driver is a state - of - the - art, optically coupled floating power source used primarily to control mosfets or igbts whe n electrical isolation between input and output is required. in addition to the infrared led and photovoltaic (pv) diode array, each of the dd (dynamic discharge) products contains circuitry that rapidly discharges the power mosfet gate when the led is de activated. the unique rapid discharge features of the photovoltaic mosfet - drivers make them particularly useful for high - side switching of n - channel mosfets in solid - state relays, dc motor control and switching regulator applications. the typical input ci rcuit to the led is a limiting resistor connected in series with the led. when activated, the led emits infrared light towards the photovoltaic diode array, which then responds by generating an open circuit voltage (v oc ), thus disabling the turn - off circui try. the self - limiting photovoltaic output of the diode array is floating and therefore, can be safely applied directly to the gate and source of a mosfet, regardless of the source potential of the mosfet. when the led is deactivated, the active turn - off c ircuit discharges the capacitive input of the mosfet. the active turn - off circuitry is designed such that the turn - off time of the mosfet is relatively independent of the input capacitance of the mosfet over a range of 50 to 5000 pf. standard packages incl ude low cost plastic mini - dips and hermetic 8 - pin dip ceramic side brazed. v package layout: 0.025 0.020 0.250 dig-11 8-30-dd xxxx 0.070 0.380 0.185 0.185 0.250 0.025 0.070 0.380 0.020 dig-12 8-30-dd xxxx pin designation pin part number number 11 - 8 - 30 - dd 12 - 8 - 30 - dd 22 - 8 - 30 - dd 1 input + input + input 1+ 2 input - input - input 1 - 3 not connected n ot connected input 2+ 4 not connected not connected input 2 - 5 not connected output1+ output1+ 6 output + output1 - output1 - 7 not connected output2+ output2+ 8 output - output2 - output2 - 11/2001
dig - 11 - 8 - 30 - dd dig - 12 - 8 - 30 - dd dig - 22 - 8 - 30 - dd equ ivalent circuits: led pv t.o cir. 3 2 1 7 6 8 1 5 6 8 7 4 t.o cir. 3 2 led pv t.o cir. pv 3 1 8 5 6 led pv t.o cir. t.o cir. 2 7 led pv 4 dig - 11 - 8 - 30 - dd dig - 12 - 8 - 30 - dd dig - 22 - 8 - 30 - dd ceramic package only v individual channel electrical characteristics (t a =25 0 c) model number 11 - 8 - 30 - dd; 12 - 8 - 30 - dd; 22 - 8 - 30 - dd unit parameter & test condition symbol min. typ. max. open circuit voltage* v oc i led = 2ma 8.5 9.5 - v i led = 10ma 9.5 10.5 - v i led = 30 ma; 50% duty cycle 10.5 11.5 - v short circuit current i sc i led = 2ma 1.0 3.0 - m m a i led = 10ma 10.0 11.0 - m m a i led = 30 ma; 50% duty cycle 30.0 31.0 - m m a led forward voltage v r i f = 20ma dig - 11 - 8 - 30 - dd - 1.3 1.7 v dig - 12 - 8 - 30 - dd - 2.6 3.4 v dig - 22 - 8 - 30 - dd - 1.3 1.7 v led reverse current i r v r = 5v 0.1 10.0 m m a off state voltage v off i off = 10ma; i led = 0ma - 0.65 1.0 v isolation voltage v iso 2500 - - vdc tem perature coefficients q q v - 45 - mv / 0 c i led = 10ma q q i - 0.5 - %i / 0 c turn - on time i led = 30 ma t on - 100 - m m s c = 1500pf; voc to 10% turn - off time** i led = 30 ma t off - 3.0 6.0 m m s c = 1500pf; voc to 50% * ceramic ver sion differs. contact factory for specifications ** for proper turn - off operation, gate must be charged to 90% of its final value before turn - off initiated v absolute maximum ratings (t a = 25 0 c) led forward current led forward current led reverse voltage output discharge current operating temperature range operating temperature range storage temperature power dissipation steady state peak 10% duty cycle plastic d.i.p side braze d.i.p 100 ma 250 ma 10v 50ma - 20 to 85 0 c - 50 to 125 0 c - 50 t o 125 0 c 250 mw
typical applications 1. power mosfet photovoltaic spst n/o ac - dc relays output led pv 2 output enh. 8 1 t.o cir. 6 5v dc dig - 11 - 8 - 30 - dd 100 ohms 10 mohms enh. 2. power mosfet spdt photovoltaic dc relays: 5 n/c output 7 100 ohms 2 t.o cir. t.o cir. n/o 8 1 0 m 10 m led pv output 1 enh. pv dig - 12 - 8 - 30 - dd dep. 6 output 5v dc 3. power mosfet photovoltaic spst n/o relays with short circuit protection: npn 1 100 ohms 10 mohms 5v dc output - led pv output + dig - 11 - 8 - 30 - dd 6 enh. t.o cir. rs 2 8 4. totem pole output drive: 2 enh. 8 enh. DIG-11-8-30-DD pulse t.o cir. 100 ohms 6 1 led pv vcc - vcc + led pv output t.o cir. DIG-11-8-30-DD 1 5v dc 8 1 2 10 mohms 10 mohms 1 2 2 100 ohms 1 2 6
5. battery backup switching: 470 ohms t.o cir. 330 ohms 1 62 ohms 330 ohms 500 ohms t.o cir. 5vdc battery led pv 8 DIG-11-8-30-DD led pv 1 390 ohms 8 6 load 10 uf lm129 2 DIG-11-8-30-DD 6 2 6. directional motor control drive: 1 direction DIG-11-8-30-DD 8 speed 10 mohms + vcc 1 10 mohms - vcc DIG-11-8-30-DD 6 led pv 2 5v dc t.o cir. 100 ohms led pv 2 6 t.o cir. 8 speed 5v dc 100 ohms
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