esja08 (8kv/5ma) high voltage diode features ultra high speed switching low vf high surge resisitivity for crt discharge high reliability design ultra small pakage applications rectification for crt display monitor high voltage power supply (fbt:flyback transformer) maximum ratings and characteristics absolute maximum ratings items repetiti v e p eak re v erse v oltage a v e r age output current su r ge current junction temperature allowable operation case temperature symbols v rrm i o i fsm t j tc condition 10ms sine-half wave peak value ta=25c,resistive load esja08 8 5 0.5 120 100 -40 to +120 units kv ma a c c c electrical characteristics (ta=25c unless otherwise specified ) items maximum forward voltage drop maximum reverse current symbols v f ir conditions i f =10ma v r =vrrm esja08 28 2 units v a maximum reverse recovery time trr ta=25c,i f =2ma,i r =4ma 0.05 s junction capacitance cj ta=25c,v r =0v,f=1mhz 2 pf storage temperature t stg esja08 is high reliability resin molded type high voltage diode in small si z e pa c kage which is sealed ( a m ultil a y e d mesa type silicon chip ) b y ep o xy resin. outline drawings ESJA08-08 cathode mark type mark 27 min. 27 min. o 2.5 o 0.5 cathode mark lot no. 6.5
esja08 (8kv/5ma) characteristics 0.01 m f 1k ohm 100 ohm 150 k ohm d.u.t oscillo scope i f =2ma i r =4ma 0 1ma trr 8 12 16 20 24 28 0 10203040 tj= 25 o c tj=100 o c forward characteristics v f [v] i f [ma] 024681012 1e-3 0.01 0.1 1 tj=100 o c tj= 25 o c reverse characteristics i r [ m a] v r [kv] 0 50 100 150 200 0.0 0.2 0.4 0.6 0.8 1.0 junction capacitance characteristics tj=25 o c f=1mhz cj [pf] v bias [v] 0 4 81216202428 0 20 40 60 80 100 tj= 25 o c i r =100 m a n=100pcs. n [pcs.] avalanche breakdown voltage v av [kv] 0.00 0.02 0.04 0.06 0.08 0.10 0 20 40 60 80 100 120 t j = 25 o c n=100pcs. n [pcs.] reverse recovery time trr ( m s)
|
