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?2005 silicon storage technology, inc. s71284-03-eol 07/09 1 the sst logo and superflash are registered trademarks of silicon storage technology, inc. these specifications are subject to change without notice. eol data sheet features: ?gain: ? ~24 db gain across the 4.9-5.8 ghz band ? high linear output power: ? ~25 dbm p1db ? evm~4% at 18 dbm over 4.9-5.8 ghz for 64 qam/54 mbps operation ? acpr below ieee 802.11 a mask up to 21 dbm across full band ? low idle current ?~80 ma i cq ? low shut-down current (< 1 a) ? 20 db dynamic range on-chip differential linear power detection ? simple rf matching circuits ? packages available ? 16-contact vqfn (3mm x 3mm) ? non-pb (lead-free) packages available applications: ? wlan (ieee 802.11a) ?japan wlan ? hyperlan2 ? multimedia product description the sst11lp11 is a high-performance power amplifier ic based on the highly-reliable ingap/gaas hbt technology. the sst11lp11 is designed to operate over the entire wlan 802.11a band between 4.9-5.8 ghz frequency band for the u.s., european, and japanese markets while achieving highly-linear power and low evm. the sst11lp11 power amplifier ic features easy board- level usage along with on-chip linear power detection and power-down control. these features coupled with low cur- rent draw at maximum linear power make the sst11lp11 ideal for battery-powered 802.11a wlan transmitter appli- cations. the sst11lp11 is offered in 16-contact vqfn package. see figure 2 for pin assignments and table 1 for pin descriptions. 4.9-5.8 ghz high-linearity power amplifier sst11lp11 sst11lp114.9-5.8 ghz high-linearity power amplifier
eol data sheet 4.9-5.8 ghz high-linear ity power amplifier sst11lp11 ?2005 silicon storage technology, inc. s71284-03-eol 07/09 2 functional blocks figure 1: functional block diagram 2 56 8 16 vcc1 15 1 14 vcc3 vcc2 49 11 12 10 13 nc vref1 vref2 vref3 det_ref nc rfout rfout det nc 3 rfin rfin vccb bias circuit 7 1284 b1.1
eol data sheet 4.9-5.8 ghz high-linearity power amplifier sst11lp11 3 ?2005 silicon storage technology, inc. s71284-03-eol 07/09 pin assignments figure 2: pin assignments for 16-contact vqfn pin descriptions table 1: pin description symbol pin no. pin name type 1 1. i=input, o=output function gnd 0 ground the center pad should be connected to rf ground with several low inductance, low resistance vias. nc 1 no connection unconnected pins. rfin 2 i rf input, dc decoupled rfin 3 i rf input, dc decoupled vccb 4 power supply pwr supply voltage for bias circuit vref1 5 pwr 1st stage id le current control vref2 6 pwr 2nd stage id le current control vref3 7 pwr 3rd stage idle current control det_ref 8 o on-chip power detector reference det 9 o on-chip power detector rfout 10 o rf output rfout 11 o rf output nc 12 no connection unconnected pins. nc 13 no connection unconnected pins. vcc3 14 power supply pwr power supply, 3rd stage vcc2 15 power supply pwr power supply, 2nd stage vcc1 16 power supply pwr power supply, 1st stage t1.0 1284 56 8 16 vcc1 15 14 vcc3 vcc2 9 11 12 10 13 nc vref1 vref2 vref3 det_ref nc rfout rfout det 2 1 4 3 nc rfin rfin vccb 7 1284 16-vqfn p1.1 top view (contacts facing down) rf and dc gnd 0
eol data sheet 4.9-5.8 ghz high-linear ity power amplifier sst11lp11 ?2005 silicon storage technology, inc. s71284-03-eol 07/09 4 electrical specifications the ac and dc specifications for the power amplifier interface signals. refer to table 2 for the dc voltage and current spec- ifications. refer to figures 3 through 12 for the rf performance. absolute maximum stress ratings (applied conditions greater than t hose listed under ?absolute maximum stress ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater t han those defined in the operational sections of this data sheet is not implied. exposu re to absolute maximum stress rating co nditions may affect device reliability.) supply voltage to pins 4, 14, 15, 16 (v cc ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3v to +5.5v dc supply current (i cc ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 ma operating temperature (t a ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oc to +85oc storage temperature (t stg ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oc to +120oc maximum junction temperature (t j ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150oc surface mount solder reflow temperature: . . . . . . . . . . . . . . . . . . . . . . . . . ?with-pb? units 1 : 240c for 3 seconds 1. certain ?with-pb? package types are capable of 260c for 3 se conds; please consult the factory for the latest information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ?non -pb? units: 260c for 3 seconds operating range range ambient temp v cc industrial -40c to +85c 3.3v table 2: dc electrical characteristics symbol parameter min. typ max. unit test conditions v cc supply voltage at pins 4, 14, 15, 16 2.7 3.3 4.2 v i cc supply current @ p out =21 dbm v cc =3.3v 260 ma 802.11a modulation det power detector output voltage 0.6 2.2 v -10 to +22 dbm det_ref power detector output reference 0.6 v i cq idle current 80 ma i off shut down current <1.0 a vreg1,2,3 reference voltages for typical applications 2.90 v t2.0 1284 table 3: ac electrical characteristics for configuration symbol parameter min. typ max. unit f l-u frequency range 4.9 5.8 ghz p out output power @ p in = -6 dbm for ofdm signal 18 dbm g small signal gain 24 db s power detector sensitivity 0.04 v/db g var1 gain variation over band (4900~5855 mhz) 1.75 db 2f, 3f, 4f, 5f harmonics at 21 dbm -40 dbc t3.0 1284
eol data sheet 4.9-5.8 ghz high-linearity power amplifier sst11lp11 5 ?2005 silicon storage technology, inc. s71284-03-eol 07/09 typical performan ce characteristics t est c onditions : v cc = 3.3v, t a = 25c, vreg1,2,3 = 2.85v unless otherwise noted figure 3: s-parameters -40 -35 -30 -25 -20 -15 -10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 frequency (ghz) s11 (db) -80 -70 -60 -50 -40 -30 -20 -10 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 frequency (ghz) s12 (db) -40 -30 -20 -10 0 10 20 30 40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 frequency (ghz) s21 (db) -30 -25 -20 -15 -10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 frequency (ghz) s22 (db) 1284 s-parms.0.0
eol data sheet 4.9-5.8 ghz high-linear ity power amplifier sst11lp11 ?2005 silicon storage technology, inc. s71284-03-eol 07/09 6 two-tone measurements t est c onditions : f = 1 mh z figure 4: power gain versus power output figure 5: supply current versus output power 20 22 24 26 28 30 9 1011121314151617181920212223 output power (dbm) power gain (db) 4.92 ghz 5.18 ghz 5.32 ghz 5.805 ghz 1284 pgainvoutp.0.0 75 125 175 225 275 325 9 1011121314151617181920212223 output power (dbm) supply current (ma) 4.92 ghz 5.18 ghz 5.32 ghz 5.805 ghz 1284 scurrvsoutpwr.0.0
eol data sheet 4.9-5.8 ghz high-linearity power amplifier sst11lp11 7 ?2005 silicon storage technology, inc. s71284-03-eol 07/09 figure 6: imd3 versus output power figure 7: detector voltage versus output power -50 -45 -40 -35 -30 -25 -20 9 1011121314151617181920212223 output power (dbm) imd3 (dbc) 4.92 ghz 5.18 ghz 5.32 ghz 5.805 ghz 1284 imd3voutp.0.0 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 -2 0 2 4 6 8 1012141618202224 output power (dbm) detector voltage (v) 4.9 ghz 5.18 ghz 5.32 ghz 5.805 ghz 1284 detvvsoutpwr.0.0
eol data sheet 4.9-5.8 ghz high-linear ity power amplifier sst11lp11 ?2005 silicon storage technology, inc. s71284-03-eol 07/09 8 ofdm signal measurements t est c onditions : 54 m bps ofdm s ignal figure 8: evm versus output power 0 1 2 3 4 5 6 7 8 9 10 9 101112131415161718192021 output power (dbm) evm (%) freq = 4.92 ghz freq = 5.18 ghz freq = 5.32 ghz freq = 5.805 ghz 1284 evmvoutp.0.0
eol data sheet 4.9-5.8 ghz high-linearity power amplifier sst11lp11 9 ?2005 silicon storage technology, inc. s71284-03-eol 07/09 figure 9: spectrum mask @ pout = 21 dbm with frequency = 4.92 ghz and icc = 235 ma figure 10: spectrum mask @ pout = 21 dbm with frequency = 5.18 ghz and icc = 230 ma 1284 acpr.4.92ghz.0.0 1284 acpr.5.18ghz230.0.0
eol data sheet 4.9-5.8 ghz high-linear ity power amplifier sst11lp11 ?2005 silicon storage technology, inc. s71284-03-eol 07/09 10 figure 11: spectrum mask @ pout = 21 dbm with frequency = 5.32 ghz and icc = 220 ma figure 12: spectrum mask @ pout = 21 dbm with frequency = 5.805 ghz and icc = 215 ma 1284 acpr.5.18ghz220.0.0 1284 acpr.5.805ghz.0.0
eol data sheet 4.9-5.8 ghz high-linearity power amplifier sst11lp11 11 ?2005 silicon storage technology, inc. s71284-03-eol 07/09 figure 13: typical schematic for high-power, high-efficiency 802.11a applications vcc 50 100pf 50 rfin vreg2 10 f 0.1 f 4.7pf* * as close as possible to package **for 8~10 mil fr4 dielectric board 100pf 0.1uf 40~60mil/10~12mil bias circuit 10 2 5 6 7 8 9 11 12 16 15 14 13 3 4 1 50 rfout 0.5 pf/0402 hi-q, typically johanson s-series 80mil/60mil** 91 det_ref det 0.1 f* 10pf 10pf 0.1 f 0.1 f 25 42 50 42 100pf vreg1 vreg3 1284 schematic.0.1
eol data sheet 4.9-5.8 ghz high-linear ity power amplifier sst11lp11 ?2005 silicon storage technology, inc. s71284-03-eol 07/09 12 product ordering information valid combinations for sst11lp11 sst11lp11-qvc SST11LP11-QVCE sst11lp11 evaluation kits sst11lp11-qvc-k SST11LP11-QVCE-k note: valid combinations are those products in mass producti on or will be in mass production. consult your sst sales representative to confirm availability of valid combinat ions and to determine availability of new combinations. sst11lp 11 - qvc e sstxx l p xx -xxx x environmental attribute e 1 = non-pb contact (lead) finish package modifier c = 16 contact package type qv = vqfn product family identifier product type p = power amplifier voltag e l = 3.0-3.6v frequency of operation 1 = 4.9-5.8 ghz product line 1 = sst communications 1. environmental suffix ?e? denotes non-pb solder. sst non-pb solder devices are ?rohs compliant?.
eol data sheet 4.9-5.8 ghz high-linearity power amplifier sst11lp11 13 ?2005 silicon storage technology, inc. s71284-03-eol 07/09 packaging diagrams figure 14: 16-contact very-thin quad flat no-lead (vqfn) sst package code: qvc table 4: revision history revision description date 00 ? s71284: sst conversion of data sheet gp1111 jan 2005 01 ? updated document status from prelim inary specification to data sheet apr 2008 02 ? updated ?contact information? on page 14. feb 2009 03 ? end-of-life data sheet for all devices in s71284 ? recommended replacement device is sst11lp12 jul 2009 note: 1. complies with jedec jep95 mo-220i, variant veed except external paddle nominal dimensions. 2. from the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch. 3. the external paddle is electrically connected to the die back-side and possibly to certain v ss leads. this paddle can be soldered to the pc board; it is suggested to connect this paddle to the v ss of the unit. connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. untoleranced dimensions are nominal target dimensions. 5. all linear dimensions are in millimeters (max/min). 16-vqfn-3x3-qvc-0.0 1.7 0.5 bsc see notes 2 and 3 pin #1 0.30 0.18 0.076 1.7 0.2 3.00 0.10 3.00 0.10 0.05 max 0.45 0.35 1.00 0.80 pin #1 top view bottom view side view 1mm
eol data sheet 4.9-5.8 ghz high-linear ity power amplifier sst11lp11 ?2005 silicon storage technology, inc. s71284-03-eol 07/09 14 contact information marketing sst communications corp. 5340 alla road, ste. 210 los angeles, ca 90066 tel: 310-577-3600 fax: 310-577-3605 sales and marketing offices north america asia pacific north silicon storage technology, inc. sst macao 1171 sonora court room n, 6th floor, sunnyvale, ca 94086-5308 macao finance center, no. 202a-246, tel: 408-735-9110 rua de pequim, macau fax: 408-735-9036 tel: 853-2870-6022 fax: 853-2870-6023 europe asia pacific south silicon storage technology ltd. sst communications co. mark house 16f-6, no. 75, sec.1, sintai 5 th rd 9-11 queens road sijhih cit y, taipei county 22101 hersham, surrey taiwan, r.o.c. kt12 5lu uk tel: 886-2-8698-1198 tel: 44 (0) 1932-238133 fax: 886-2-8698-1190 fax: 44 (0) 1932-230567 japan korea sst japan sst korea nof tameike bldg, 9f 6f, heungkuk life insurance bldg 6-7 1-1-14 akasaka, minato-ku sunae-dong, bundang-gu, sungnam-si tokyo, japan 107-0052 kyungki-do, korea, 463-020 tel: 81-3-5575-5515 tel: 82-31-715-9138 fax:81-3-5575-5516 fax: 82-31-715-9137 silicon storage technology, inc. ? 1171 sonora court ? sunnyvale, ca 94086 ? telephone 408-735-9110 ? fax 408-735-9036 www.superflash.com or www.sst.com

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