tempfet ? bts 112 a 1 04.97 3 2 1 features n channel enhancement mode temperature sensor with thyristor characteristic the drain pin is electricaliy shorted to the tab pin 1 2 3 gds type v ds i d r ds(on) package ordering code bts 112a 60 v 12 a 0.15 ? to-220ab c67078-s5014-a3 maximum ratings parameter symbol values unit drain-source voltage v ds 60 v drain-gate voltage, r gs = 20 k ? v dgr 60 gate-source voltage v gs 20 continuous drain current, t c = 33 c i d 12 a iso drain current t c = 85 c, v gs = 10 v, v ds = 0.5 v i d-iso 2.5 pulsed drain current, t c = 25 c i d puls 48 short circuit current, t j = ?55 ... + 150 c i sc 27 short circuit dissipation, t j = ?55 ... + 150 c p scmax 400 w power dissipation p tot 40 operating and storage temperature range t j , t stg ?55 ... + 150 c din humidity category, din 40 040 e iec climatic category, din iec 68-1 55/150/56 thermal resistance chip-case chip-ambient r th jc r th ja 3.1 75 k/w
tempfet ? bts 112 a 2 04.97 electrical characteristics at t j = 25 ? c, unless otherwise specified. parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs = 0 , i d = 0.25 ma v (br)dss 60 v gate threshold voltage v gs = v ds , i d = 1.0 ma v gs(th) 2.5 3.0 3.5 zero gate voltage drain current v gs = 60 v, v ds = 0 t j = 25 c t j = 150 c i dss 0.1 10 1.0 100 a gate-source leakage current v gs = 20 v, v ds = 0 t j = 25 c t j = 150 c i gss 10 2 100 4 na a drain-source on-state resistance v gs = 10 v , i d = 7.5 a r ds(on) 0.12 0.15 ? dynamic characteristics forward transconductance v ds 2 i d r ds(on)max , i d = 7.5 a g fs 3.0 5.7 s input capacitance v gs = 0 , v ds = 25 v, f = 1 mhz c iss 360 480 pf output capacitance v gs = 0 , v ds = 25 v, f = 1 mhz c oss 160 250 reverse transfer capacitance v gs = 0 , v ds = 25 v, f = 1 mhz c rss 50 90 turn-on time t on , ( t on = t d(on) + t r ) v cc = 30 v, v gs = 10 v, i d = 3 a, r gs = 50 ? t d(on) 15 25 ns t r 30 45 turn-off time t off , ( t off = t d(off) + t f ) v cc = 30 v, v gs = 10 v, i d = 3 a, r gs = 50 ? t d(off) 40 55 t f 55 75
tempfet ? bts 112 a 3 04.97 electrical characteristics (cont d) at t j = 25 c, unless otherwise specified. parameter symbol values unit min. typ. max. reverse diode continuous source current i s 12 a pulsed source current i sm 48 diode forward on-voltage i f = 24 a, v gs = 0 v sd 1.5 1.8 v reverse recovery time i f = i s , d i f /d t = 100 a/ s, v r = 30 v t rr 60 ns reverse recovery charge i f = i s , d i f /d t = 100 a/ s, v r = 30 v q rr 0.1 c temperature sensor forward voltage i ts(on) = 10 ma, t j = 55 ... + 150 c sensor override, t p 100 s t j = 55 ... + 160 c v ts(on) 1.4 1.5 10 v forward current t j = 55 ... + 150 c sensor override, t p 100 s t j = 55 ... + 160 c i ts(on) 10 600 ma holding current, v ts(off) = 5.0 v, t j = 25 c t j = 150 c i h 0.05 0.05 0.1 0.2 0.5 0.3 switching temperature v ts = 5.0 v t ts(on) 150 c turn-off time v ts = 5.0 v, i ts(on) = 2 ma t off 0.5 2.5 s
tempfet ? bts 112 a 4 04.97 examples for short-circuit protection at t j = 55 ... + 150 c, unless otherwise specified. parameter symbol examples unit 12 drain-source voltage v ds 15 30 v gate-source voltage v gs 6.8 5.0 short-circuit current i sc 27 11 a short-circuit dissipation p sc 400 330 w response time t j = 25 c, before short circuit t sc(off) 20 20 ms short-circuit protection i sc = f ( v ds ) parameter :v gs diagram to determine i sc for t j = 55 ... +150 c max. gate voltage v gs(sc) = f ( v ds ) parameter: t j = 55 ... + 150 c
tempfet ? bts 112 a 5 04.97 max. power dissipation p tot = f ( t c ) typical output characteristics i d = f ( v ds ) parameter :t p =80 s typ. drain-source on-state resistance r ds(on) = f ( i d ) parameter :v gs safe operating area i d = f ( v ds ) parameter: d = 0.01, t c =25 c
tempfet ? bts 112 a 6 04.97 drain-source on-state resistance r ds(on) = f ( t j ) parameter: i d = 5 a, v gs = 10 v typ. transfer characteristic i d = f ( v gs ) parameter :t p = 80 s, v ds = 25 v gate threshold voltage v gs(th) = f ( t j ) parameter :v ds = v gs , i d = 1 ma typ. transconductance g fs = f ( i d ) parameter: t p = 80 s, v ds = 25 v
tempfet ? bts 112 a 7 04.97 continuous drain current i d = f ( t c ) parameter: v gs 10 v typ. gate-source leakage current i gss = f ( t c ) parameter: v gs = 20 v, v ds = 0 forward characteristics of reverse diode i f = f ( v sd ) parameter :t j , t p = 80 s typ. capacitances c = f ( v ds ) parameter: v gs = 0, f = 1 mhz
tempfet ? bts 112 a 8 04.97 transient thermal impedance z thjc = f ( t p ) parameter :d = t p / t
tempfet ? bts 112 a 9 04.97 to 220 ab ordering code standard c67078-s5014-a3 to 220 ab ordering code smd version e 3045 c67078-s5014-a4 tape & reel e 3045 a c67078-s5014-a5 3.7 9.5 9.9 4.6 0.75 1.05 2.54 2.54 17.5 2.8 12.8 0.5 2.4 13.5 9.2 15.6 1.3 4.4 gpt05155 1) 3) max. 14.5 by dip tinning press burr max. 0.05 2) dip tinning 1) punch direction, burr max. 0.04 3) 2) 1
tempfet ? bts 112 a 10 04.97 edition 04.97 published by infineon technologies ag, st.-martin-strasse 53, d-81541 m nchen, germany ? infineon technologies ag 2000. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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