BUL118D high voltage fast-switching npn power transistor n npn transistor n high voltage capability n low spread of dynamic parameters n minimum lot-to-lot spread for reliable operation n very high switching speed applications: n electronic ballasts for fluorescent lighting description the device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. it uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide rbsoa. the device is designed for use in lighting applications and low cost switch-mode power supplies. ? internal schematic diagram december 2002 absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) 700 v v ceo collector-emitter voltage (i b = 0) 400 v v ebo emitter-base voltage (i c =0) 9 v i c collector current 2 a i cm collector peak current (t p <5ms) 4 a i b base current 1 a i bm base peak current (t p <5ms) 2 a p tot total dissipation at t c =25 o c60w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 3 to-220 1/7
thermal data r thj-case r t hj- amb thermal resistance junction-case max thermal resistance junction-ambient max 2.08 62.5 o c/w o c/w electrical characteristics (t case =25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be =0) v ce =700v v ce =700v t c =125 o c 100 500 m a m a i ceo collector cut-off current (i b =0) v ce = 400 v 250 m a v ebo emitter-base voltage (i c =0) i e =10ma 9 v v ceo(sus) collector-emitter sustaining voltage (i b =0) i c = 100 ma l = 25 mh 400 v v ce(sat) * collector-emitter saturation voltage i c =0.5a i b =0.1a i c =1a i b =0.2a i c =2a i b =0.4a 0.5 1 1.5 v v v v be(s at) * base-emitter saturation voltage i c =0.5a i b =0.1a i c =1a i b =0.2a i c =2a i b =0.4a 1.0 1.2 1.3 v v v h fe * dc current gain i c =10ma v ce =5v i c =0.5a v ce =5v i c =2a v ce =5v 10 10 8 50 t r t s t f resistive load rise time storage time fall time v cc =125 v i c =1a i b1 =0.2a i b2 =-0.2a 0.4 3 0.25 0.7 4.5 0.4 m s m s m s t s t f inductive load storage time fall time i c =1a i b1 =0.2a v be =-5v l=50mh v clamp =300v 0.8 0.16 m s m s v f diode forward voltage i c =1a 2.5 v * pulsed: pulse duration = 300 m s, duty cycle 1.5 % BUL118D 2/7
safe operating area dc current gain collector emitter saturation voltage derating curve dc current gain base emitter saturation voltage BUL118D 3/7
inductive load fall time inductive load storage time resistive load fall time resistive load storage time reverse biased soa BUL118D 4/7
figure 1: inductive load switching test circuit. figure 2: resistive load switching test circuit. 1) fast electronic switch 2) non-inductive resistor 3) fast recovery rectifier 1) fast electronic switch 2) non-inductive resistor BUL118D 5/7
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.052 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.202 g1 2.40 2.70 0.094 0.106 h2 10.00 10.40 0.394 0.409 l2 16.40 0.645 l4 13.00 14.00 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.260 l9 3.50 3.93 0.137 0.154 m 2.60 0.102 dia. 3.75 3.85 0.147 0.151 p011ci to-220 mechanical data BUL118D 6/7
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 2002 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com BUL118D 7/7
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