View DL150D_1833117.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

dl150/d rev. 2, may-2001 tvs/zener device data tvs/zener device data 05/01 dl150 rev 2 dl150/d on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes withou t further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specific ations can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for e ach customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc pro ducts are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to supp ort or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. shou ld buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees , subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly o r indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regar ding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303-675-2175 or 800-344-3860 toll free usa/canada fax : 303-675-2176 or 800-344-3867 toll free usa/canada email : onlit @ hibbertco.com fax response line: 303-675-2167 or 800-344-3810 toll free usa/canada n. american technical support : 800-282-9855 toll free usa/canada europe : ldc for on semiconductor - european support german phone : (+1) 303-308-7140 (mon-fri 2:30pm to 7:00pm cet) email : onlit-german @ hibbertco.com french phone : (+1) 303-308-7141 (mon-fri 2:00pm to 7:00pm cet) email : onlit-french @ hibbertco.com english phone : (+1) 303-308-7142 (mon-fri 12:00pm to 5:00pm gmt) email : onlit @ hibbertco.com european toll-free access*: 00-800-4422-3781 *available from germany, france, italy, uk, ireland central/south america: spanish phone : 303-308-7143 (mon-fri 8:00am to 5:00pm mst) email : onlit-spanish @ hibbertco.com toll-free from mexico : dial 01-800-288-2872 for access - then dial 866-297-9322 asia/pacific : ldc for on semiconductor - asia support phone: 303-675-2121 (t-f 9:00am to 1:00pm hong kong time) toll free from hong kong & singapore: 001-800-4422-3781 email : onlit-asia @ hibbertco.com japan : on semiconductor, japan customer focus center 4-32-1 nishi-gotanda, shinagawa-ku, tokyo, japan 141-0031 phone : 81-3-5740-2700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com publication ordering information for additional information, please contact your local sales representative
tvs/zeners device data transient voltage suppressors and zener diodes dl150/d rev. 2, may2001 ? scillc, 2001 previous edition ? 1994 aall rights reserved''
http://onsemi.com 2 this book presents technical data for the broad line of on semiconductor transient voltage suppressors and zener diodes. complete specifications for the individual devices are provided in the form of data sheets. a comprehensive selector guide and industry cross reference guide are included to simplify the task of choosing the best set of components required for a specific application. for additional information, please visit our website at: http://onsemi.com although information in this book has been carefully checked, no responsibility for inaccuracies can be assumed by on semiconductor. please consult your nearest on semiconductor sales office for further assistance regarding any aspect of on semiconductor products. on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
http://onsemi.com 3 on semiconductor device classifications in an effort to provide uptodate information to the customer regarding the status of any given device, on semiconductor has classified all devices into three categories: preferred devices, current products and not recommended for new design products. a preferred type is a device which is recommended as a first choice for future use. these devices are apreferredo by virtue of their performance, price, functionality, or combination of attributes which offer the overall abesto value to the customer. this category contains both advanced and mature devices which will remain available for the foreseeable future. apreferred deviceso are denoted below the device part numbers on the individual data sheets. device types identified as acurrento may not be a first choice for new designs, but will continue to be available because of the popularity and/or standardization or volume usage in current production designs. these products can be acceptable for new designs but the preferred types are considered better alternatives for long term usage. any device that has not been identified as a apreferred deviceo is a acurrento device. this data book does not contain any anot recommended for new designo devices. surmetic and mosorb are trademarks of semiconductor components industries, llc (scillc). thermal clad is a trademark of the bergquist company. all brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
http://onsemi.com 4 table of contents page chapter 1: alphanumeric index of part numbers 5 . . . . chapter 2: selector guide for transient voltage suppressors and zener diodes 13 . . . . . . . . . . chapter 3: transient voltage suppressors axial leaded data sheets 43 . . . . . . . . . . . . . . . . . . . . . . . p6ke6.8a series 45 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p6ke6.8ca series 51 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1n6267a series 57 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . sa5.0a series 63 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . sa5.0ca series 68 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5ke6.8ca series 72 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1n5908 78 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1n6373 series 83 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1n6382 series 88 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . chapter 4: transient voltage suppressors surface mounted data sheets 93 . . . . . . . . . . . . . . . . . . . 1pmt5.0at3 series 94 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1sma5.0at3 series 98 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1sma10cat3 series 102 . . . . . . . . . . . . . . . . . . . . . . . . . . 1smb5.0at3 series 105 . . . . . . . . . . . . . . . . . . . . . . . . . . . p6smb6.8at3 series 111 . . . . . . . . . . . . . . . . . . . . . . . . . 1smb10cat3 series 117 . . . . . . . . . . . . . . . . . . . . . . . . . . p6smb11cat3 series 122 . . . . . . . . . . . . . . . . . . . . . . . . 1smc5.0at3 series 127 . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5smc6.8at3 series 133 . . . . . . . . . . . . . . . . . . . . . . . . . chapter 5: transient voltage suppressor arrays surface mounted data sheets 139 . . . . . . . . . . . . . . . . . . mmbz5v6alt1 series 140 . . . . . . . . . . . . . . . . . . . . . . . . mmbz15vdlt1, mmbz27vclt1 146 . . . . . . . . . . . . . . . mmqa5v6t1 series 150 . . . . . . . . . . . . . . . . . . . . . . . . . . msqa6v1w5t2 155 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . df6a6.8fut1 158 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . sms05t1 160 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . chapter 6: zener voltage regulator diodes axial leaded data sheets 163 . . . . . . . . . . . . . . . . . . . . . . 1n4370a series 165 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1n957b series 173 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1n5985b series 181 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . bzx79c2v4rl series 189 . . . . . . . . . . . . . . . . . . . . . . . . . 1n4678 series 197 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1n5221b series 206 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1n4728a series 215 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . bzx85c3v3rl series 221 . . . . . . . . . . . . . . . . . . . . . . . . . 1n5913b series 228 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3ez4.3d5 series 234 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . mzp4729a series 240 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1n5333b series 246 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . page chapter 7: zener voltage regulator diodes surface mounted data sheets 253 . . . . . . . . . . . . . . . . . . mm3z2v4t1 series 254 . . . . . . . . . . . . . . . . . . . . . . . . . . . bzx84c2v4lt1 series 259 . . . . . . . . . . . . . . . . . . . . . . . . mmbz5221blt1 series 264 . . . . . . . . . . . . . . . . . . . . . . . mmsz5221bt1 series 269 . . . . . . . . . . . . . . . . . . . . . . . . mmsz4678t1 series 274 . . . . . . . . . . . . . . . . . . . . . . . . . . mmsz2v4t1 series 279 . . . . . . . . . . . . . . . . . . . . . . . . . . . 1pmt5920bt3 series 283 . . . . . . . . . . . . . . . . . . . . . . . . . 1sma5913bt3 series 287 . . . . . . . . . . . . . . . . . . . . . . . . . 1smb5913bt3 series 292 . . . . . . . . . . . . . . . . . . . . . . . . . chapter 8: surface mount information and packaging specifications 297 . . . . . . . . . . . . . . . . . . . . . . footprints for soldering 302 . . . . . . . . . . . . . . . . . . . . . . . . chapter 9: package outline dimensions 311 . . . . . . . . . chapter 10: technical information, application notes and articles 321 . . . . . . . . . . . . . . . . . . zener diode theory 323 . . . . . . . . . . . . . . . . . . . . . . . . . . . zener diode fabrication techniques 328 . . . . . . . . . . . . . reliability 332 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . zener diode characteristics 338 . . . . . . . . . . . . . . . . . . . . temperature compensated zeners 350 . . . . . . . . . . . . . . basic voltage regulation using zener diodes 354 . . . . zener protective circuits and techniques: basic design considerations 364 . . . . . . . . . . . . . . . . zener voltage sensing circuits and applications 374 . . miscellaneous applications of zener type devices 381 . . . . . . . . . . . . . . . . . . . . . . . . transient voltage suppression 383 . . . . . . . . . . . . . . . . . an784 402 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . an843 404 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . design considerations and performance of temperature compensated zener diodes 417 . . . . . mosorbs 422 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ar450 426 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . measurement of zener voltage to thermal equilibrium with pulsed test current 439 . . . . . . . . . . sales office list 447 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . standard document type definitions 448 . . . . . . . . . . . .
http://onsemi.com 5 chapter 1 alphanumeric index of part numbers
http://onsemi.com 6 device page 1.5ke100a 59 1.5ke100ca 74 1.5ke10a 59 1.5ke10ca 74 1.5ke110a 59 1.5ke110ca 74 1.5ke11a 59 1.5ke11ca 74 1.5ke120a 59 1.5ke120ca 74 1.5ke12a 59 1.5ke12ca 74 1.5ke130a 59 1.5ke130ca 74 1.5ke13a 59 1.5ke13ca 74 1.5ke150a 59 1.5ke150ca 74 1.5ke15a 59 1.5ke15ca 74 1.5ke160a 59 1.5ke160ca 74 1.5ke16a 59 1.5ke16ca 74 1.5ke170a 59 1.5ke170ca 74 1.5ke180a 59 1.5ke180ca 74 1.5ke18a 59 1.5ke18ca 74 1.5ke200a 59 1.5ke200ca 74 1.5ke20a 59 1.5ke20ca 74 1.5ke220a 59 1.5ke220ca 74 1.5ke22a 59 1.5ke22ca 74 1.5ke24a 59 1.5ke24ca 74 1.5ke250a 59 1.5ke250ca 74 1.5ke27a 59 1.5ke27ca 74 1.5ke30a 59 1.5ke30ca 74 device page 1.5ke33a 59 1.5ke33ca 74 1.5ke36a 59 1.5ke36ca 74 1.5ke39a 59 1.5ke39ca 74 1.5ke43a 59 1.5ke43ca 74 1.5ke47a 59 1.5ke47ca 74 1.5ke51a 59 1.5ke51ca 74 1.5ke56a 59 1.5ke56ca 74 1.5ke6.8a 59 1.5ke6.8ca 74 1.5ke62a 59 1.5ke62ca 74 1.5ke68a 59 1.5ke68ca 74 1.5ke7.5a 59 1.5ke7.5ca 74 1.5ke75a 59 1.5ke75ca 74 1.5ke8.2a 59 1.5ke8.2ca 74 1.5ke82a 59 1.5ke82ca 74 1.5ke9.1a 59 1.5ke9.1ca 74 1.5ke91a 59 1.5ke91ca 74 1.5smc10at3 135 1.5smc11at3 135 1.5smc12at3 135 1.5smc13at3 135 1.5smc15at3 135 1.5smc16at3 135 1.5smc18at3 135 1.5smc20at3 135 1.5smc22at3 135 1.5smc24at3 135 1.5smc27at3 135 1.5smc30at3 135 1.5smc33at3 135 1.5smc36at3 135 device page 1.5smc39at3 135 1.5smc43at3 135 1.5smc47at3 135 1.5smc51at3 135 1.5smc56at3 135 1.5smc6.8at3 135 1.5smc62at3 135 1.5smc68at3 135 1.5smc7.5at3 135 1.5smc75at3 135 1.5smc8.2at3 135 1.5smc82at3 135 1.5smc9.1at3 135 1.5smc91at3 135 1n4370a 166 1n4371a 166 1n4372a 166 1n4678 199 1n4679 199 1n4680 199 1n4681 199 1n4682 199 1n4683 199 1n4684 199 1n4685 199 1n4686 199 1n4687 199 1n4688 199 1n4689 199 1n4690 199 1n4691 199 1n4692 199 1n4693 199 1n4694 199 1n4695 199 1n4696 199 1n4697 199 1n4698 199 1n4699 199 1n4700 199 1n4701 199 1n4702 199 1n4703 199 1n4704 199 1n4705 199 1n4707 199 device page 1n4711 199 1n4728a 216 1n4729a 216 1n4730a 216 1n4731a 216 1n4732a 216 1n4733a 216 1n4734a 216 1n4735a 216 1n4736a 216 1n4737a 216 1n4738a 216 1n4739a 216 1n4740a 216 1n4741a 216 1n4742a 216 1n4743a 216 1n4744a 216 1n4745a 216 1n4746a 217 1n4747a 217 1n4748a 217 1n4749a 217 1n4750a 217 1n4751a 217 1n4752a 217 1n4753a 217 1n4754a 217 1n4755a 217 1n4756a 217 1n4757a 217 1n4758a 217 1n4759a 217 1n4760a 217 1n4761a 217 1n4762a 217 1n4763a 217 1n5221b 207 1n5222b 207 1n5223b 207 1n5224b 207 1n5225b 207 1n5226b 207 1n5227b 207 1n5228b 207 1n5229b 207
http://onsemi.com 7 device page 1n5230b 207 1n5231b 207 1n5232b 207 1n5233b 207 1n5234b 207 1n5235b 207 1n5236b 208 1n5237b 208 1n5238b 208 1n5239b 208 1n5240b 208 1n5241b 208 1n5242b 208 1n5243b 208 1n5244b 208 1n5245b 208 1n5246b 208 1n5247b 208 1n5248b 208 1n5249b 208 1n5250b 208 1n5251b 208 1n5252b 208 1n5253b 208 1n5254b 208 1n5255b 208 1n5256b 208 1n5257b 208 1n5258b 208 1n5259b 208 1n5260b 208 1n5261b 208 1n5262b 208 1n5263b 208 1n5264b 208 1n5265b 208 1n5266b 208 1n5267b 208 1n5268b 208 1n5269b 208 1n5270b 208 1n5333b 248 1n5334b 248 1n5335b 248 1n5336b 248 1n5337b 248 device page 1n5338b 248 1n5339b 248 1n5340b 248 1n5341b 248 1n5342b 248 1n5343b 248 1n5344b 248 1n5345b 248 1n5346b 248 1n5347b 248 1n5348b 248 1n5349b 248 1n5350b 248 1n5351b 248 1n5352b 248 1n5353b 248 1n5354b 248 1n5355b 248 1n5356b 248 1n5357b 248 1n5358b 248 1n5359b 248 1n5360b 248 1n5361b 248 1n5362b 248 1n5363b 249 1n5364b 249 1n5365b 249 1n5366b 249 1n5367b 249 1n5368b 249 1n5369b 249 1n5370b 249 1n5371b 249 1n5372b 249 1n5373b 249 1n5374b 249 1n5375b 249 1n5376b 249 1n5377b 249 1n5378b 249 1n5379b 249 1n5380b 249 1n5381b 249 1n5382b 249 1n5383b 249 device page 1n5384b 249 1n5385b 249 1n5386b 249 1n5387b 249 1n5388b 249 1n5908 78 1n5913b 230 1n5917b 230 1n5919b 230 1n5920b 230 1n5921b 230 1n5923b 230 1n5924b 230 1n5925b 230 1n5926b 230 1n5927b 230 1n5929b 230 1n5930b 230 1n5931b 230 1n5932b 230 1n5933b 230 1n5934b 230 1n5935b 230 1n5936b 230 1n5937b 230 1n5938b 230 1n5940b 230 1n5941b 230 1n5942b 230 1n5943b 230 1n5944b 230 1n5945b 230 1n5946b 230 1n5947b 230 1n5948b 230 1n5950b 230 1n5951b 230 1n5952b 230 1n5953b 230 1n5954b 230 1n5955b 230 1n5956b 230 1n5985b 182 1n5987b 182 1n5988b 182 1n5990b 182 device page 1n5991b 182 1n5992b 182 1n5993b 182 1n5994b 182 1n5995b 182 1n5996b 182 1n5997b 182 1n5998b 182 1n5999b 182 1n6000b 182 1n6001b 182 1n6002b 182 1n6004b 182 1n6007b 182 1n6373 84 1n6374 84 1n6375 84 1n6376 84 1n6377 84 1n6378 84 1n6379 84 1n6380 84 1n6381 84 1n6382 89 1n6383 89 1n6384 89 1n6385 89 1n6386 89 1n6387 89 1n6388 89 1n6389 89 1n746a 166 1n747a 166 1n748a 166 1n749a 166 1n750a 166 1n751a 166 1n752a 166 1n753a 166 1n754a 166 1n755a 166 1n756a 166 1n757a 166 1n758a 166 1n759a 166 1n957b 174
http://onsemi.com 8 device page 1n958b 174 1n959b 174 1n960b 174 1n961b 174 1n962b 174 1n963b 174 1n964b 174 1n965b 174 1n966b 174 1n967b 174 1n968b 174 1n969b 174 1n970b 174 1n971b 174 1n972b 174 1n973b 174 1n974b 174 1n975b 174 1n978b 174 1n979b 174 1n982b 174 1pmt12at3 95 1pmt16at3 95 1pmt18at3 95 1pmt22at3 95 1pmt24at3 95 1pmt26at3 95 1pmt28at3 95 1pmt30at3 95 1pmt33at3 95 1pmt36at3 95 1pmt40at3 95 1pmt48at3 95 1pmt5.0at3 95 1pmt51at3 95 1pmt58at3 95 1pmt5920bt3 284 1pmt5219bt3 284 1pmt5922bt3 284 1pmt5923bt3 284 1pmt5924bt3 284 1pmt5925bt3 284 1pmt5927bt3 284 1pmt5929bt3 284 1pmt5930bt3 284 1pmt5931bt3 284 device page 1pmt5933bt3 284 1pmt5934bt3 284 1pmt5935bt3 284 1pmt5936bt3 284 1pmt5939bt3 284 1pmt7.0at3 284 1pmt59bt3 95 1sma10at3 100 1sma10cat3 103 1sma11at3 100 1sma11cat3 103 1sma12at3 100 1sma12cat3 103 1sma13at3 100 1sma13cat3 103 1sma14at3 100 1sma14cat3 103 1sma15at3 100 1sma15cat3 103 1sma16at3 100 1sma16cat3 103 1sma17at3 100 1sma17cat3 103 1sma18at3 100 1sma18cat3 103 1sma20at3 100 1sma20cat3 103 1sma22at3 100 1sma22cat3 103 1sma24at3 100 1sma24cat3 103 1sma26at3 100 1sma26cat3 103 1sma28at3 100 1sma28cat3 103 1sma30at3 100 1sma30cat3 103 1sma33at3 100 1sma33cat3 103 1sma36at3 100 1sma36cat3 103 1sma40at3 100 1sma40cat3 103 1sma43at3 100 1sma43cat3 103 1sma45at3 100 device page 1sma45cat3 103 1sma48at3 100 1sma48cat3 103 1sma5.0at3 100 1sma51at3 100 1sma51cat3 103 1sma54at3 100 1sma54cat3 103 1sma58at3 100 1sma58cat3 103 1sma5913bt3 289 1sma5914bt3 289 1sma5915bt3 289 1sma5916bt3 289 1sma5917bt3 289 1sma5918bt3 289 1sma5919bt3 289 1sma5920bt3 289 1sma5921bt3 289 1sma5922bt3 289 1sma5923bt3 289 1sma5924bt3 289 1sma5925bt3 289 1sma5926bt3 289 1sma5927bt3 289 1sma5928bt3 289 1sma5929bt3 289 1sma5930bt3 289 1sma5931bt3 289 1sma5932bt3 289 1sma5933bt3 289 1sma5934bt3 289 1sma5935bt3 289 1sma5936bt3 289 1sma5937bt3 289 1sma5938bt3 289 1sma5939bt3 289 1sma5940bt3 289 1sma5941bt3 289 1sma5942bt3 289 1sma5943bt3 289 1sma5944bt3 289 1sma5945bt3 289 1sma6.0at3 100 1sma6.5at3 100 1sma60at3 100 device page 1sma60cat3 103 1sma64at3 100 1sma64cat3 103 1sma7.0at3 100 1sma7.5at3 100 1sma70at3 100 1sma70cat3 103 1sma75at3 100 1sma75cat3 103 1sma78at3 100 1sma78cat3 103 1sma8.0at3 100 1sma8.5at3 100 1sma9.0at3 100 1smb100at3 107 1smb10at3 107 1smb10cat3 118 1smb110at3 107 1smb11at3 107 1smb11cat3 118 1smb120at3 107 1smb12at3 107 1smb12cat3 118 1smb130at3 107 1smb13at3 107 1smb13cat3 118 1smb14at3 107 1smb14cat3 118 1smb150at3 107 1smb15at3 107 1smb15cat3 118 1smb160at3 107 1smb16at3 107 1smb16cat3 118 1smb170at3 107 1smb17at3 107 1smb17cat3 118 1smb18at3 107 1smb18cat3 118 1smb20at3 107 1smb20cat3 118 1smb22at3 107 1smb22cat3 118 1smb24at3 107 1smb24cat3 118 1smb26at3 107
http://onsemi.com 9 device page 1smb26cat3 118 1smb28at3 107 1smb28cat3 118 1smb30at3 107 1smb30cat3 118 1smb33at3 107 1smb33cat3 118 1smb36at3 107 1smb36cat3 118 1smb40at3 107 1smb40cat3 118 1smb43at3 107 1smb43cat3 118 1smb45at3 107 1smb45cat3 118 1smb48at3 107 1smb48cat3 118 1smb5.0at3 107 1smb51at3 107 1smb51cat3 118 1smb54at3 107 1smb54cat3 118 1smb58at3 107 1smb58cat3 118 1smb5913bt3 294 1smb5914bt3 294 1smb5915bt3 294 1smb5916bt3 294 1smb5917bt3 294 1smb5918bt3 294 1smb5919bt3 294 1smb5920bt3 294 1smb5921bt3 294 1smb5922bt3 294 1smb5923bt3 294 1smb5924bt3 294 1smb5925bt3 294 1smb5926bt3 294 1smb5927bt3 294 1smb5928bt3 294 1smb5929bt3 294 1smb5930bt3 294 1smb5931bt3 294 1smb5932bt3 294 1smb5933bt3 294 1smb5934bt3 294 device page 1smb5935bt3 294 1smb5936bt3 294 1smb5937bt3 294 1smb5938bt3 294 1smb5939bt3 294 1smb5940bt3 294 1smb5941bt3 294 1smb5942bt3 294 1smb5943bt3 294 1smb5944bt3 294 1smb5945bt3 294 1smb5946bt3 294 1smb5947bt3 294 1smb5948bt3 294 1smb5949bt3 294 1smb5950bt3 294 1smb5951bt3 294 1smb5952bt3 294 1smb5953bt3 294 1smb5954bt3 294 1smb5955bt3 294 1smb5956bt3 294 1smb6.0at3 107 1smb6.5at3 107 1smb60at3 107 1smb60cat3 118 1smb64at3 107 1smb64cat3 118 1smb7.0at3 107 1smb7.5at3 107 1smb70at3 107 1smb70cat3 118 1smb75at3 107 1smb75cat3 118 1smb78at3 107 1smb78cat3 118 1smb8.0at3 107 1smb8.5at3 107 1smb85at3 107 1smb9.0at3 107 1smb90at3 107 1smc10at3 129 1smc11at3 129 1smc12at3 129 1smc13at3 129 1smc14at3 129 device page 1smc15at3 129 1smc16at3 129 1smc17at3 129 1smc18at3 129 1smc20at3 129 1smc22at3 129 1smc24at3 129 1smc26at3 129 1smc28at3 129 1smc30at3 129 1smc33at3 129 1smc36at3 129 1smc40at3 129 1smc43at3 129 1smc45at3 129 1smc48at3 129 1smc5.0at3 129 1smc51at3 129 1smc54at3 129 1smc58at3 129 1smc6.0at3 129 1smc6.5at3 129 1smc60at3 129 1smc64at3 129 1smc7.0at3 129 1smc7.5at3 129 1smc70at3 129 1smc75at3 129 1smc78at3 129 1smc8.0at3 129 1smc8.5at3 129 1smc9.0at3 129 3ez10d5 236 3ez13d5 236 3ez15d5 236 3ez16d5 236 3ez18d5 236 3ez220d5 236 3ez240d5 236 3ez24d5 236 3ez330d5 236 3ez36d5 236 3ez39d5 236 3ez4.3d5 236 3ez6.2d5 236 3ez8.2d5 236 device page bzx79c10rl 190 bzx79c12rl 190 bzx79c15rl 190 bzx79c16rl 190 bzx79c18rl 190 bzx79c22rl 190 bzx79c24rl 190 bzx79c27rl 190 bzx79c2v4rl 190 bzx79c2v7rl 190 bzx79c30rl 190 bzx79c33rl 190 bzx79c3v0rl 190 bzx79c3v3rl 190 bzx79c3v6rl 190 bzx79c3v9rl 190 bzx79c4v7rl 190 bzx79c5v1rl 190 bzx79c5v6rl 190 bzx79c6v2rl 190 bzx79c6v8rl 190 bzx79c7v5rl 190 bzx79c8v2rl 190 bzx84c10lt1 261 bzx84c11lt1 261 bzx84c12lt1 261 bzx84c13lt1 261 bzx84c15lt1 261 bzx84c16lt1 261 bzx84c18lt1 261 bzx84c20lt1 261 bzx84c22lt1 261 bzx84c24lt1 261 bzx84c27lt1 261 bzx84c2v4lt1 261 bzx84c2v7lt1 261 bzx84c30lt1 261 bzx84c33lt1 261 bzx84c36lt1 261 bzx84c39lt1 261 bzx84c3v0lt1 261 bzx84c3v3lt1 261 bzx84c3v6lt1 261 bzx84c3v9lt1 261 bzx84c43lt1 261 bzx84c47lt1 261
http://onsemi.com 10 device page bzx84c4v3lt1 261 bzx84c4v7lt1 261 bzx84c51lt1 261 bzx84c56lt1 261 bzx84c5v1lt1 261 bzx84c5v6lt1 261 bzx84c62lt1 261 bzx84c68lt1 261 bzx84c6v2lt1 261 bzx84c6v8lt1 261 bzx84c75lt1 261 bzx84c7v5lt1 261 bzx84c8v2lt1 261 bzx84c9v1lt1 261 bzx85c10rl 223 bzx85c12rl 223 bzx85c13rl 223 bzx85c15rl 223 bzx85c16rl 223 bzx85c18rl 223 bzx85c22rl 223 bzx85c24rl 223 bzx85c27rl 223 bzx85c30rl 223 bzx85c33rl 223 bzx85c36rl 223 bzx85c3v3rl 223 bzx85c3v6rl 223 bzx85c3v9rl 223 bzx85c43rl 223 bzx85c47rl 223 bzx85c4v3rl 223 bzx85c4v7rl 223 bzx85c5v1rl 223 bzx85c5v6rl 223 bzx85c62rl 223 bzx85c6v2rl 223 bzx85c6v8rl 223 bzx85c75rl 223 bzx85c7v5rl 223 bzx85c82rl 223 bzx85c8v2rl 223 bzx85c9v1rl 223 df6a6.8fut1 158 icte10 84 icte10c 89 device page icte12 84 icte12c 89 icte15 84 icte15c 89 icte18 84 icte18c 89 icte22 84 icte22c 89 icte36 84 icte36c 89 icte5 84 mm3z10vt1 256 mm3z11vt1 256 mm3z12vt1 256 mm3z13vt1 256 mm3z15vt1 256 mm3z16vt1 256 mm3z18vt1 256 mm3z20vt1 256 mm3z22vt1 256 mm3z24vt1 256 mm3z27vt1 256 mm3z2v4t1 256 mm3z2v7t1 256 mm3z30vt1 256 mm3z33vt1 256 mm3z36vt1 256 mm3z39vt1 256 mm3z3v0t1 256 mm3z3v3t1 256 mm3z3v6t1 256 mm3z3v9t1 256 mm3z43vt1 256 mm3z47vt1 256 mm3z4v3t1 256 mm3z4v7t1 256 mm3z51vt1 256 mm3z56vt1 256 mm3z5v1t1 256 mm3z5v6t1 256 mm3z62vt1 256 mm3z68vt1 256 mm3z6v2t1 256 mm3z6v8t1 256 mm3z75vt1 256 mm3z7v5t1 256 device page mm3z8v2t1 256 mm3z9v1t1 256 mmbz10valt1 140 mmbz12valt1 140 mmbz15valt1 140 mmbz15vdlt1 146 mmbz18valt1 140 mmbz20valt1 140 mmbz27valt1 140 mmbz27vclt1 146 mmbz33valt1 140 mmbz5221blt1 266 mmbz5222blt1 266 mmbz5223blt1 266 mmbz5224blt1 266 mmbz5225blt1 266 mmbz5226blt1 266 mmbz5227blt1 266 mmbz5228blt1 266 mmbz5229blt1 266 mmbz5230blt1 266 mmbz5231blt1 266 mmbz5232blt1 266 mmbz5233blt1 266 mmbz5234blt1 266 mmbz5235blt1 266 mmbz5236blt1 266 mmbz5237blt1 266 mmbz5238blt1 266 mmbz5239blt1 266 mmbz5240blt1 266 mmbz5241blt1 266 mmbz5242blt1 266 mmbz5243blt1 266 mmbz5244blt1 266 mmbz5245blt1 266 mmbz5246blt1 266 mmbz5247blt1 266 mmbz5248blt1 266 mmbz5249blt1 266 mmbz5250blt1 266 mmbz5251blt1 266 mmbz5252blt1 266 mmbz5253blt1 266 mmbz5254blt1 266 mmbz5255blt1 266 device page mmbz5256blt1 266 mmbz5257blt1 266 mmbz5258blt1 266 mmbz5259blt1 266 mmbz5260blt1 266 mmbz5261blt1 266 mmbz5262blt1 266 mmbz5263blt1 266 mmbz5264blt1 266 mmbz5265blt1 266 mmbz5266blt1 266 mmbz5267blt1 266 mmbz5268blt1 266 mmbz5269blt1 266 mmbz5270blt1 266 mmbz5v6alt1 140 mmbz6v2alt1 140 mmbz6v8alt1 140 mmbz9v1alt1 140 mmqa12vt1 151 mmqa13vt1 151 mmqa15vt1 151 mmqa18vt1 151 mmqa20vt1 151 mmqa21vt1 151 mmqa22vt1 151 mmqa24vt1 151 mmqa27vt1 151 mmqa30vt1 151 mmqa33vt1 151 mmqa5v6t1 151 mmqa6v2t1 151 mmqa6v8t1 151 mmsz10t1 280 mmsz11t1 280 mmsz12t1 280 mmsz13t1 280 mmsz15t1 280 mmsz16t1 280 mmsz18t1 280 mmsz20t1 280 mmsz22t1 280 mmsz24t1 280 mmsz27t1 280 mmsz2v4t1 280 mmsz2v7t1 280
http://onsemi.com 11 device page mmsz30t1 280 mmsz33t1 280 mmsz36t1 280 mmsz39t1 280 mmsz3v0t1 280 mmsz3v3t1 280 mmsz3v6t1 280 mmsz3v9t1 280 mmsz43t1 280 mmsz4678t1 276 mmsz4679t1 276 mmsz4680t1 276 mmsz4681t1 276 mmsz4682t1 276 mmsz4683t1 276 mmsz4684t1 276 mmsz4685t1 276 mmsz4686t1 276 mmsz4687t1 276 mmsz4688t1 276 mmsz4689t1 276 mmsz4690t1 276 mmsz4691t1 276 mmsz4692t1 276 mmsz4693t1 276 mmsz4694t1 276 mmsz4695t1 276 mmsz4696t1 276 mmsz4697t1 276 mmsz4698t1 276 mmsz4699t1 276 mmsz4700t1 276 mmsz4701t1 276 mmsz4702t1 276 mmsz4703t1 276 mmsz4704t1 276 mmsz4705t1 276 mmsz4706t1 276 mmsz4707t1 276 mmsz4708t1 276 mmsz4709t1 276 mmsz4710t1 276 mmsz4711t1 276 mmsz4712t1 276 mmsz4713t1 276 mmsz4714t1 276 device page mmsz4715t1 276 mmsz4716t1 276 mmsz4717t1 276 mmsz4v3t1 280 mmsz4v7t1 280 mmsz51t1 280 mmsz5221bt1 271 mmsz5222bt1 271 mmsz5223bt1 271 mmsz5224bt1 271 mmsz5225bt1 271 mmsz5226bt1 271 mmsz5227bt1 271 mmsz5228bt1 271 mmsz5229bt1 271 mmsz5230bt1 271 mmsz5231bt1 271 mmsz5232bt1 271 mmsz5233bt1 271 mmsz5234bt1 271 mmsz5235bt1 271 mmsz5236bt1 271 mmsz5237bt1 271 mmsz5238bt1 271 mmsz5239bt1 271 mmsz5240bt1 271 mmsz5241bt1 271 mmsz5242bt1 271 mmsz5243bt1 271 mmsz5244bt1 271 mmsz5245bt1 271 mmsz5246bt1 271 mmsz5247bt1 271 mmsz5248bt1 271 mmsz5249bt1 271 mmsz5250bt1 271 mmsz5251bt1 271 mmsz5252bt1 271 mmsz5253bt1 271 mmsz5254bt1 271 mmsz5255bt1 271 mmsz5256bt1 271 mmsz5257bt1 271 mmsz5258bt1 271 mmsz5259bt1 271 mmsz5260bt1 271 device page mmsz5261bt1 271 mmsz5262bt1 271 mmsz5263bt1 271 mmsz5264bt1 271 mmsz5265bt1 271 mmsz5266bt1 271 mmsz5267bt1 271 mmsz5268bt1 271 mmsz5269bt1 271 mmsz5270bt1 271 mmsz5272bt1 271 mmsz56t1 280 mmsz5v1t1 280 mmsz5v6t1 280 mmsz6v2t1 280 mmsz6v8t1 280 mmsz7v5t1 280 mmsz8v2t1 280 mmsz9v1t1 280 msqa6v1w5t2 155 mzp4729a 242 mzp4734a 242 mzp4735a 242 mzp4736a 242 mzp4737a 242 mzp4738a 242 mzp4740a 242 mzp4741a 242 mzp4744a 242 mzp4745a 242 mzp4746a 242 mzp4749a 242 mzp4750a 242 mzp4751a 242 mzp4752a 242 mzp4753a 242 p6ke100a 47 p6ke100ca 53 p6ke10a 47 p6ke10ca 53 p6ke110a 47 p6ke110ca 53 p6ke11a 47 p6ke11ca 53 p6ke120a 47 p6ke120ca 53 device page p6ke12a 47 p6ke12ca 53 p6ke130a 47 p6ke130ca 53 p6ke13a 47 p6ke13ca 53 p6ke150a 47 p6ke150ca 53 p6ke15a 47 p6ke15ca 53 p6ke160a 47 p6ke160ca 53 p6ke16a 47 p6ke16ca 53 p6ke170a 47 p6ke170ca 53 p6ke180a 47 p6ke180ca 53 p6ke18a 47 p6ke18ca 53 p6ke200a 47 p6ke200ca 53 p6ke20a 47 p6ke20ca 53 p6ke22a 47 p6ke22ca 53 p6ke24a 47 p6ke24ca 53 p6ke27a 47 p6ke27ca 53 p6ke30a 47 p6ke30ca 53 p6ke33a 47 p6ke33ca 53 p6ke36a 47 p6ke36ca 53 p6ke39a 47 p6ke39ca 53 p6ke43a 47 p6ke43ca 53 p6ke47a 47 p6ke47ca 53 p6ke51a 47 p6ke51ca 53 p6ke56a 47 p6ke56ca 53
http://onsemi.com 12 device page p6ke6.8a 47 p6ke6.8ca 53 p6ke62a 47 p6ke62ca 53 p6ke68a 47 p6ke68ca 53 p6ke7.5a 47 p6ke7.5ca 53 p6ke75a 47 p6ke75ca 53 p6ke8.2a 47 p6ke8.2ca 53 p6ke82a 47 p6ke82ca 53 p6ke9.1a 47 p6ke9.1ca 53 p6ke91a 47 p6ke91ca 53 p6smb100at3 113 p6smb10at3 113 p6smb110at3 113 p6smb11at3 113 p6smb11cat3 123 p6smb120at3 113 p6smb12at3 113 p6smb12cat3 123 p6smb130at3 113 p6smb13at3 113 p6smb13cat3 123 p6smb150at3 113 p6smb15at3 113 p6smb15cat3 123 p6smb160at3 113 p6smb16at3 113 p6smb16cat3 123 p6smb170at3 113 p6smb180at3 113 p6smb18at3 113 p6smb18cat3 123 p6smb200at3 113 p6smb20at3 113 p6smb20cat3 123 device page p6smb22at3 113 p6smb22cat3 123 p6smb24at3 113 p6smb24cat3 123 p6smb27at3 113 p6smb27cat3 123 p6smb30at3 113 p6smb30cat3 123 p6smb33at3 113 p6smb33cat3 123 p6smb36at3 113 p6smb36cat3 123 p6smb39at3 113 p6smb39cat3 123 p6smb43at3 113 p6smb43cat3 123 p6smb47at3 113 p6smb47cat3 123 p6smb51at3 113 p6smb51cat3 123 p6smb56at3 113 p6smb56cat3 123 p6smb6.8at3 113 p6smb62at3 113 p6smb62cat3 123 p6smb68at3 113 p6smb68cat3 123 p6smb7.5at3 113 p6smb75at3 113 p6smb75cat3 123 p6smb8.2at3 113 p6smb82at3 113 p6smb82cat3 123 p6smb9.1at3 113 p6smb91at3 113 p6smb91cat3 123 sa100a 65 sa100ca 70 sa10a 65 sa10ca 69 sa110a 65 device page sa110ca 70 sa11a 65 sa11ca 69 sa120a 65 sa120ca 70 sa12a 65 sa12ca 69 sa130a 65 sa130ca 70 sa13a 65 sa13ca 69 sa14a 65 sa14ca 69 sa150a 65 sa150ca 70 sa15a 65 sa15ca 69 sa160a 65 sa160ca 70 sa16a 65 sa16ca 69 sa170a 65 sa170ca 70 sa17a 65 sa17ca 69 sa18a 65 sa18ca 69 sa20a 65 sa20ca 69 sa22a 65 sa22ca 69 sa24a 65 sa24ca 69 sa26a 65 sa26ca 69 sa28a 65 sa28ca 69 sa30a 65 sa30ca 69 sa33a 65 sa33ca 69 device page sa36a 65 sa36ca 69 sa40a 65 sa40ca 69 sa43a 65 sa43ca 69 sa45a 65 sa45ca 69 sa48a 65 sa48ca 69 sa5.0a 65 sa5.0ca 69 sa51a 65 sa51ca 69 sa58a 65 sa58ca 69 sa6.0a 65 sa6.0ca 69 sa60a 65 sa60ca 69 sa64a 65 sa64ca 70 sa7.0a 65 sa7.0ca 69 sa7.5a 65 sa7.5ca 69 sa70a 65 sa70ca 70 sa78a 65 sa78ca 70 sa8.0a 65 sa8.0ca 69 sa8.5a 65 sa8.5ca 69 sa85ca 70 sa9.0a 65 sa9.0ca 69 sa90a 65 sa90ca 70 sms05t1 160 sms05t3 160
http://onsemi.com 13 chapter 2 selector guide for transient voltage suppressors and zener diodes
http://onsemi.com 14 on semiconductor's standard tvs (transient voltage suppressors) and zener diodes comprise the largest inventoried line in the industry. continuous development of improved manufacturing techniques have resulted in computerized diffusion and test, as well as critical process controls learned from surfacesensitive mos fabrication. the resulting higher yields have lowered the factory costs. check the following features for application to your specific requirements: ? wide selection of package materials and styles: plastic (surmetic) for low cost, mechanical ruggedness glass for high reliability, low cost surface mount packages for state of the art designs ? steady state power dissipation from 0.25 to 5.0 watts ? breakdown voltages from 1.8 to 400 volts in approximately 10% steps ? transient voltage suppression protection from 24 to 1500 watts with working peak reverse voltage from 5.0 to 214 volts ? esd protection devices ? special selection of electrical characteristics available at low cost due to highvolume lines (check your on semiconductor sales representative for special quotations) ? ul recognition on many tvs device types ? tape and reel options available on all axial leaded and surface mount types ? many tvs are offered as bidirectional (clipper devices) ? standard zener tolerance is 5.0% page zener diodes 15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . axial leaded 15 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . surface mount 17 . . . . . . . . . . . . . . . . . . . . . . . . . . . . tvs (transient voltage suppressors) 21 . . . . . . . . . . . axial leaded 21 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 watt 21 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 watt 23 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500 watt 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . surface mount packages 28 . . . . . . . . . . . . . . . . . . . 175 watt (powermite) 28 . . . . . . . . . . . . . . . . . . . . 400 watt (sma) 29 . . . . . . . . . . . . . . . . . . . . . . . . . 600 watt (smb) 31 . . . . . . . . . . . . . . . . . . . . . . . . . 1500 watt (smc) 36 . . . . . . . . . . . . . . . . . . . . . . . multiple device packages 38 . . . . . . . . . . . . . . . . . . . duals (typical) 38 . . . . . . . . . . . . . . . . . . . . . . . . . . quads (typical) 40 . . . . . . . . . . . . . . . . . . . . . . . . .
http://onsemi.com 15 zener diodes e regulation in axial leads table 1. axial leaded e 3, 5 watt nominal 3 watt 5 watt oa zener 3a 5a zener breakdown breakdown voltage cathode = polarity band cathode =polarity band volts plastic surmetic 30 case 59-03 (do-41) plastic surmetic 40 case 17 1.8 2.0 2.2 2.4 2.5 2.7 2.8 3.0 3.3 1n5913b 1n5333b 3.6 mzp4729a 1n5914b 1n5334b 3.9 mzp4730a 1n5915b 1n5335b 4.3 mzp4731a 1n5916b 1n5336b 4.7 mzp4732a 1n5917b 1n5337b 5.1 mzp4733a 1n5918b 1n5338b 5.6 mzp4734a 1n5919b 1n5339b 6.0 1n5340b 6.2 mzp4735a 1n5920b 1n5341b 6.8 mzp4736a 1n5921b 1n5342b 7.5 mzp4737a 1n5922b 1n5343b 8.2 mzp4738a 1n5923b 1n5344b 8.7 1n5345b 9.1 mzp4739a 1n5924b 1n5346b 10 mzp4740a 1n5925b 1n5347b 11 mzp4741a 1n5926b 1n5348b 12 1n5927b 1n5349b 13 mzp4743a 1n5928b 1n5350b 14 1n5351b 15 mzp4744a 1n5929b 1n5352b 16 mzp4745a 1n5930b 1n5353b 17 1n5354b 18 mzp4746a 1n5931b 1n5355b 19 1n5356b 20 mzp4747a 1n5932b 1n5357b 22 mzp4748a 1n5933b 1n5358b 24 mzp4749a 1n5934b 1n5359b devices listed in bold , italic are on semiconductor preferred devices.
http://onsemi.com 16 zener diodes e regulation in axial leads (continued) table 1. axial leaded e 3, 5 watt (continued) nominal 3 watt 5 watt oa zener 3a 5a zener breakdown breakdown voltage cathode = polarity band cathode = polarity band volts plastic surmetic 30 case 59-03 (do-41) plastic surmetic 40 case 17 25 1n5360b 27 mzp4750a 1n5935b 1n5361b 28 1n5362b 30 mzp4751a 1n5936b 1n5363b 33 1n5937b 1n5364b 36 1n5938b 1n5365b 39 1n5939b 1n5366b 43 1n5940b 1n5367b 47 1n5941b 1n5368b 51 1n5942b 1n5369b 56 1n5943b 1n5370b 60 1n5371b 62 1n5944b 1n5372b 68 1n5945b 1n5373b 75 1n5946b 1n5374b 82 1n5947b 1n5375b 87 1n5376b 91 1n5948b 1n5377b 100 1n5949b 1n5378b 110 1n5950b 1n5379b 120 1n5951b 1n5380b 130 1n5952b 1n5381b 140 1n5382b 150 1n5953b 1n5383b 160 1n5954b 1n5384b 170 1n5385b 180 1m180zs5 1n5955b 1n5386b 190 1n5387b 200 1m200zs5 1n5956b 1n5388b 220 240 270 300 330 360 400
http://onsemi.com 17 zener diodes e regulation in surface mount table 2. surface mount packages e .2, .225, .5 watt nominal 200 mw 225 mw 500 mw zener breakdown voltage sod323 sot-23 sod-123 volts case 477 style 1 plastic case 318 to-236ab anode cathode no connection plastic case 425, style 1 1.8 mmsz4678t1 2.0 mmsz4679t1 2.2 mmsz4680t1 2.4 mm3z2v4t1 bzx84c2v4lt1 mmbz5221blt1 mmsz2v4t1 mmsz4681t1 mmsz5221bt1 2.5 mmbz5222blt1 mmsz5222bt1 2.7 mm3z2v7t1 bzx84c2v7lt1 mmbz5223blt1 mmsz2v7t1 mmsz4682t1 mmsz5223bt1 2.8 mmbz5224blt1 mmsz5224bt1 3.0 mm3z3v0t1 bzx84c3v0lt1 mmbz5225blt1 mmsz3v0t1 mmsz4683t1 mmsz5225bt1 3.3 mm3z3v3t1 bzx84c3v3lt1 mmbz5226blt1 mmsz3v3t1 mmsz4684t1 mmsz5226bt1 3.6 mm3z3v6t1 bzx84c3v6lt1 mmbz5227blt1 mmsz3v6t1 mmsz4685t1 mmsz5227bt1 3.9 mm3z3v9t1 bzx84c3v9lt1 mmbz5228blt1 mmsz3v9t1 mmsz4686t1 mmsz5228bt1 4.3 mm3z4v3t1 bzx84c4v3lt1 mmbz5229blt1 mmsz4v3t1 mmsz4687t1 mmsz5229bt1 4.7 mm3z4v7t1 bzx84c4v7lt1 mmbz5230blt1 mmsz4v7t1 mmsz4688t1 mmsz5230bt1 5.1 mm3z5v1t1 bzx84c5v1lt1 mmbz5231blt1 mmsz5v1t1 mmsz4689t1 mmsz5231bt1 5.6 mm3z5v6t1 bzx84c5v6lt1 mmbz5232blt1 mmsz5v6t1 mmsz4690t1 mmsz5232bt1 6.0 mmbz5233blt1 mmsz5233bt1 6.2 mm3z6v2t1 bzx84c6v2lt1 mmbz5234blt1 mmsz6v2t1 mmsz4691t1 mmsz5234bt1 6.8 mm3z6v8t1 bzx84c6v8lt1 mmbz5235blt1 mmsz6v8t1 mmsz4692t1 mmsz5235bt1 7.5 mm3z7v5t1 bzx84c7v5lt1 mmbz5236blt1 mmsz7v5t1 mmsz4693t1 mmsz5236bt1 8.2 mm3z8v2t1 bzx84c8v2lt1 mmbz5237blt1 mmsz8v2t1 mmsz4694t1 mmsz5237bt1 8.7 mmbz5238blt1 mmsz4695t1 mmsz5238bt1 9.1 mm3z9v1t1 bzx84c9v1lt1 mmbz5239blt1 mmsz9v1t1 mmsz4696t1 mmsz5239bt1 10 mm3z10vt1 bzx84c10lt1 mmbz5240blt1 mmsz10t1 mmsz4697t1 mmsz5240bt1 11 mm3z11vt1 bzx84c11lt1 mmbz5241blt1 mmsz11t1 mmsz4698t1 mmsz5241bt1 12 mm3z12vt1 bzx84c12lt1 mmbz5242blt1 mmsz12t1 mmsz4699t1 mmsz5242bt1 13 mm3z13vt1 bzx84c13lt1 mmbz5243blt1 mmsz13t1 mmsz4700t1 mmsz5243bt1 14 mmbz5244blt1 mmsz4701t1 mmsz5244bt1 15 mm3z15vt1 bzx84c15lt1 mmbz5245blt1 mmsz15t1 mmsz4702t1 mmsz5245bt1 16 mm3z16vt1 bzx84c16lt1 mmbz5246blt1 mmsz16t1 mmsz4703t1 mmsz5246bt1 17 mmbz5247blt1 mmsz4704t1 mmsz5247bt1 18 mm3z18vt1 bzx84c18lt1 mmbz5248blt1 mmsz18t1 mmsz4705t1 mmsz5248bt1 19 mmbz5249blt1 mmsz4706t1 mmsz5249bt1 20 mm3z20vt1 bzx84c20lt1 mmbz5250blt1 mmsz20t1 mmsz4707t1 mmsz5250bt1 22 mm3z22vt1 bzx84c22lt1 mmbz5251blt1 mmsz22t1 mmsz4708t1 mmsz5251bt1 24 mm3z24vt1 bzx84c24lt1 mmbz5252blt1 mmsz24t1 mmsz4709t1 mmsz5252bt1 25 mmbz5253blt1 mmsz4710t1 mmsz5253bt1 27 mm3z27vt1 bzx84c27lt1 mmbz5254blt1 mmsz27t1 mmsz4711t1 mmsz5254bt1 28 mmbz5255blt1 mmsz4712t1 mmsz5255bt1 30 mm3z30vt1 bzx84c30lt1 mmbz5256blt1 mmsz30t1 mmsz4713t1 mmsz5256bt1 33 mm3z33vt1 bzx84c33lt1 mmbz5257blt1 mmsz33t1 mmsz4714t1 mmsz5257bt1
http://onsemi.com 18 zener diodes e regulation in surface mount (continued) table 2. surface mount packages e .2, .225, .5 watt (continued) nominal 200 mw 225 mw 500 mw zener breakdown voltage sod323 sot-23 sod-123 volts case 477 style 1 plastic case 318 to-236ab anode cathode no connection plastic case 425, style 1 36 mm3z36vt1 bzx84c36lt1 mmbz5258blt1 mmsz36t1 mmsz4715t1 mmsz5258bt1 39 mm3z39vt1 bzx84c39lt1 mmbz5259blt1 mmsz39t1 mmsz4716t1 mmsz5259bt1 43 mm3z43vt1 bzx84c43lt1 mmbz5260blt1 mmsz43t1 mmsz4717t1 mmsz5260bt1 47 mm3z47vt1 bzx84c47lt1 mmbz5261blt1 mmsz47t1 mmsz5261bt1 51 mm3z51vt1 bzx84c51lt1 mmbz5262blt1 mmsz51t1 mmsz5262bt1 56 mm3z56vt1 bzx84c56lt1 mmbz5263blt1 mmsz56t1 mmsz5263bt1 60 mmbz5264blt1 mmsz5264bt1 62 mm3z62vt1 bzx84c62lt1 mmbz5265blt1 mmsz62t1 mmsz5265bt1 68 mm3z68vt1 bzx84c68lt1 mmbz5266blt1 mmsz68t1 mmsz5266bt1 75 mm3z75vt1 bzx84c75lt1 mmbz5267blt1 mmsz75t1 mmsz5267bt1 82 mmbz5268blt1 mmsz5268bt1 87 mmbz5269blt1 mmsz5269bt1 91 mmbz5270blt1 mmsz5270bt1 100 110 120 130 150 160 180 200
http://onsemi.com 19 zener diodes e regulation in surface mount (continued) table 3. surface mount packages e 1.5, 3 watt nominal 1.5 watt 3 watt 3 watt zener breakdown voltage sma powermite smb volts plastic case 403b cathode = notch plastic case 457 cathode anode plastic case 403a 1.8 2.0 2.2 2.4 2.5 2.7 2.8 3.0 3.3 1sma5913bt3 1smb5913bt3 3.6 1sma5914bt3 1smb5914bt3 3.9 1sma5915bt3 1smb5915bt3 4.3 1sma5916bt3 1smb5916bt3 4.7 1sma5917bt3 1smb5917bt3 5.1 1sma5918bt3 1smb5918bt3 5.6 1sma5919bt3 1smb5919bt3 6.0 6.2 1sma5920bt3 1pmt5920bt3 1smb5920bt3 6.8 1sma5921bt3 1pmt5921bt3 1smb5921bt3 7.5 1sma5922bt3 1pmt5922bt3 1smb5922bt3 8.2 1sma5923bt3 1pmt5923bt3 1smb5923bt3 8.7 9.1 1sma5924bt3 1pmt5924bt3 1smb5924bt3 10 1sma5925bt3 1pmt5925bt3 1smb5925bt3 11 1sma5926bt3 1smb5926bt3 12 1sma5927bt3 1pmt5927bt3 1smb5927bt3 13 1sma5928bt3 1smb5928bt3 14 1pmt5929bt3 1smb5929bt3 15 1sma5929bt3 16 1sma5930bt3 1pmt5930bt3 1smb5930bt3 17 18 1sma5931bt3 1pmt5931bt3 1smb5931bt3 19 20 1sma5932bt3 1smb5932bt3 22 1sma5933bt3 1pmt5933bt3 1smb5933bt3 24 1sma5934bt3 1pmt5934bt3 1smb5934bt3 25 27 1sma5935bt3 1pmt5935bt3 1smb5935bt3 28 30 1sma5936bt3 1pmt5936bt3 1smb5936bt3 33 1sma5937bt3 1smb5937bt3
http://onsemi.com 20 zener diodes e regulation in surface mount (continued) table 3. surface mount packages e 1.5, 3 watt (continued) nominal 1.5 watt 3 watt 3 watt zener breakdown voltage sma powermite smb volts plastic case 403b cathode = notch plastic case 457 cathode anode plastic case 403a 36 1sma5938bt3 1smb5938bt3 39 1sma5939bt3 1pmt5939bt3 1smb5939bt3 43 1sma5940bt3 1smb5940bt3 47 1sma5941bt3 1pmt5941bt3 1smb5941bt3 51 1sma5942bt3 1smb5942bt3 56 1sma5943bt3 1smb5943bt3 60 62 1sma5944bt3 1smb5944bt3 68 1sma5945bt3 1smb5945bt3 75 1smb5946bt3 82 1smb5947bt3 87 91 1smb5948bt3 100 1smb5949bt3 110 1smb5950bt3 120 1smb5951bt3 130 1smb5952bt3 150 1smb5953bt3 160 1smb5954bt3 180 1smb5955bt3 200 1smb5956bt3
http://onsemi.com 21 tvs e in axial leads table 4. peak power dissipation, 500 watts @ 1 ms surge case 59-04 e mini mosorb case 59-04 plastic cathode = polarity band 01234 56 i rsm i rsm time (ms) surge current characterisitcs 2 (mini mosorb ? ) electrical characteristics (t a = 25 c unless otherwise noted) v f = 3.5 v max, i f = 35 a pulse (except bidirectional devices). working peak breakdown voltage maxim m maxim m working peak reverse maximum reverse maxim m maximum reverse voltage reverse voltage v br @i t reverse leakage maximum reverse s rge reverse voltage @i rsm v o lt age v rwm v br (volts) @ i t p lse l ea k age @v rwm reverse surge c rrent i rsm @ i rsm (clamping voltage) v rwm (volts) device min max p u l se (ma) @ v rwm i r ( m a) c urren t i rsm (amps) (cl amp i ng v o lt age ) v rsm (volts) 5 sa5.0a 6.4 7 10 600 54.3 9.2 6 sa6.0a 6.67 7.37 10 600 48.5 10.3 6.5 sa6.5a 7.22 7.98 10 400 44.7 11.2 7 sa7.0a 7.78 8.6 10 150 41.7 12 7.5 sa7.5a 8.33 9.21 1 50 38.8 12.9 8 sa8.0a 8.89 9.83 1 25 36.7 13.6 8.5 sa8.5a 9.44 10.4 1 5 34.7 14.4 9 sa9.0a 10 11.1 1 1 32.5 15.4 10 sa10a 11.1 12.3 1 1 29.4 17 11 sa11a 12.2 13.5 1 1 27.4 18.2 12 sa12a 13.3 14.7 1 1 25.1 19.9 13 sa13a 14.4 15.9 1 1 23.2 21.5 14 sa14a 15.6 17.2 1 1 21.5 23.2 15 sa15a 16.7 18.5 1 1 20.6 24.4 16 sa16a 17.8 19.7 1 1 19.2 26 17 sa17a 18.9 20.9 1 1 18.1 27.6 18 sa18a 20 22.1 1 1 17.2 29.2 20 sa20a 22.2 24.5 1 1 15.4 32.4 22 sa22a 24.4 26.9 1 1 14.1 35.5 24 sa24a 26.7 29.5 1 1 12.8 38.9 26 sa26a 28.9 31.9 1 1 11.9 42.1 28 sa28a 31.1 34.4 1 1 11 45.4 30 sa30a 33.3 36.8 1 1 10.3 48.4 33 sa33a 36.7 40.6 1 1 9.4 53.3 for bidirectional types use ca suffix, sa6.5ca, sa12ca, sa13ca and sa15ca are on semiconductor preferred devices. bidirectional devices have cathode polarity band on each end. (consult factory for availability).
http://onsemi.com 22 tvs e in axial leads (continued) table 4. peak power dissipation, 500 watts @ 1 ms surge case 59-04 e mini mosorb (continued) electrical characteristics (t a = 25 c unless otherwise noted) v f = 3.5 v max, i f = 35 a pulse (except bidirectional devices). working peak breakdown voltage maxim m maxim m working peak reverse maximum reverse maxim m maximum reverse voltage reverse voltage v br @i t reverse leakage maximum reverse s rge reverse voltage @i rsm v o lt age v rwm v br (volts) @ i t p lse l ea k age @v rwm reverse surge c rrent i rsm @ i rsm (clamping voltage) v rwm (volts) device min max p u l se (ma) @ v rwm i r ( m a) c urren t i rsm (amps) (cl amp i ng v o lt age ) v rsm (volts) 36 sa36a 40 44.2 1 1 8.6 58.1 40 sa40a 44.4 49.1 1 1 7.8 64.5 43 sa43a 47.8 52.8 1 1 7.2 69.4 45 sa45a 50 55.3 1 1 6.9 72.7 48 sa48a 53.3 58.9 1 1 6.5 77.4 51 sa51a 56.7 62.7 1 1 6.1 82.4 54 sa54a 60 66.3 1 1 5.7 87.1 58 sa58a 64.4 71.2 1 1 5.3 93.6 60 sa60a 66.7 73.7 1 1 5.2 96.8 64 sa64a 71.1 78.6 1 1 4.9 103 70 sa70a 77.8 86 1 1 4.4 113 75 sa75a 83.3 92.1 1 1 4.1 121 78 sa78a 86.7 95.8 1 1 4 126 85 sa85a 94.4 104 1 1 3.6 137 90 sa90a 100 111 1 1 3.4 146 100 sa100a 111 123 1 1 3.1 162 110 sa110a 122 135 1 1 2.8 177 120 sa120a 133 147 1 1 2.5 193 130 sa130a 144 159 1 1 2.4 209 150 sa150a 167 185 1 1 2.1 243 160 sa160a 178 197 1 1 1.9 259 170 sa170a 189 209 1 1 1.8 275 for bidirectional types use ca suffix, sa18ca and sa24ca are on semiconductor preferred devices. bidirectional devices have cathode polarity band on each end. (consult factory for availability).
http://onsemi.com 23 tvs e in axial leads (continued) table 5. peak power dissipation, 600 watts @ 1 ms surge case 17 e surmetic 40 case 17 plastic cathode = polarity band 01234 56 i rsm i rsm time (ms) surge current characterisitcs 2 electrical characteristics (t a = 25 c unless otherwise noted) v f = 3.5 v max, i f = 50 a pulse (except bidirectional devices). breakdown ea do voltage working peak r maximum r maximum rvlt v br @i t g reverse voltage reverse leakage maximum reverse s rge reverse voltage @i rsm br (volts) @ i t pulse v o lt age v rwm l ea k age @v rwm r everse s urge current i rsm @ i rsm (clamping voltage) nom p u lse (ma) device v rwm (volts) @ v rwm i r ( m a) c urren t i rsm (amps) (clamping voltage) v rsm (volts) n om ( m a) d ev i ce (v o lt s ) i r ( m a) ( amps ) v rsm (v o lt s ) 6.8 10 p6ke6.8a 5.8 1000 57 10.5 7.5 10 p6ke7.5a 6.4 500 53 11.3 8.2 10 p6ke8.2a 7.02 200 50 12.1 9.1 1 p6ke9.1a 7.78 50 45 13.4 10 1 p6ke10a 8.55 10 41 14.5 11 1 p6ke11a 9.4 5 38 15.6 12 1 p6ke12a 10.2 5 36 16.7 13 1 p6ke13a 11.1 5 33 18.2 15 1 p6ke15a 12.8 5 28 21.2 16 1 p6ke16a 13.6 5 27 22.5 18 1 p6ke18a 15.3 5 24 25.2 20 1 p6ke20a 17.1 5 22 27.7 22 1 p6ke22a 18.8 5 20 30.6 24 1 p6ke24a 20.5 5 18 33.2 27 1 p6ke27a 23.1 5 16 37.5 30 1 p6ke30a 25.6 5 14.4 41.4 33 1 p6ke33a 28.2 5 13.2 45.7 36 1 p6ke36a 30.8 5 12 49.9 39 1 p6ke39a 33.3 5 11.2 53.9 43 1 p6ke43a 36.8 5 10.1 59.3 47 1 p6ke47a 40.2 5 9.3 64.8 51 1 p6ke51a 43.6 5 8.6 70.1 56 1 p6ke56a 47.8 5 7.8 77 62 1 p6ke62a 53 5 7.1 85 68 1 p6ke68a 58.1 5 6.5 92 75 1 p6ke75a 64.1 5 5.8 103 82 1 p6ke82a 70.1 5 5.3 113 91 1 p6ke91a 77.8 5 4.8 125 100 1 p6ke100a 85.5 5 4.4 137 110 1 p6ke110a 94 5 4 152 120 1 p6ke120a 102 5 3.6 165 130 1 p6ke130a 111 5 3.3 179 for bidirectional types use ca suffix, p6ke7.5ca and p6ke11ca are on semiconductor preferred devices.
http://onsemi.com 24 tvs e in axial leads (continued) table 5. peak power dissipation, 600 watts @ 1 ms surge case 17 e surmetic 40 (continued) electrical characteristics (t a = 25 c unless otherwise noted) v f = 3.5 v max, i f = 50 a pulse (except bidirectional devices). breakdown ea do voltage working peak r maximum r maximum rvl v br @i t g reverse voltage reverse leakage maximum reverse s rge reverse voltage @i rsm br (volts) @ i t pulse v o lt age v rwm l ea k age @v rwm r everse s urge current i rsm @ i rsm (clamping voltage) nom p u lse (ma) device v rwm (volts) @ v rwm i r ( m a) c urren t i rsm (amps) (clamping voltage) v rsm (volts) n om ( m a) d ev i ce (v o lt s ) i r ( m a) ( amps ) v rsm (v o lt s ) 150 1 p6ke150a 128 5 2.9 207 160 1 p6ke160a 136 5 2.7 219 170 1 p6ke170a 145 5 2.6 234 180 1 p6ke180a 154 5 2.4 246 200 1 p6ke200a 171 5 2.2 274 for bidirectional types use ca suffix. bidirectional devices have cathode polarity band on each end. (consult factory for availability).
http://onsemi.com 25 tvs e in axial leads (continued) table 6. peak power dissipation, 1500 watts @ 1 ms surge case 41a e mosorb case 41a plastic cathode = polarity band 01234 56 i rsm i rsm time (ms) surge current characterisitcs 2 electrical characteristics (t a = 25 c unless otherwise noted) v f = 3.5 v max, i f = 100 a pulse) electrical characteristics (c suffix denotes standard back to back bidirectional versions. test both polarities) clamping voltage (9) max reverse stand- breakdown voltage maximum maximum reverse maximum reverse voltage @ i rsm peak pulse current @ peak pulse current @ i pp2 = stand- off voltage v rwm (volts) jedec device device v br volts min @ i t pulse (ma) maxim u m reverse leakage @ v rwm i r ( m a) reverse surge current i rsm (volts) i rsm (clamping voltage) v rsm (volts) c u rrent @ i pp1 = 1 a v c1 (volts max) i pp 2 = 10 a v c2 (volts max) 5 1n5908 6 1 300 120 8.5 7.6 @ 30 a 8@ 60 a 5 1n6373 icte-5 /mpte-5 6 1 300 160 9.4 7.1 7.5 8 1n6374 icte-8/mpte-8 9.4 1 25 100 15 11.3 11.5 8 1n6382 icte-8c/mpte-8c 9.4 1 25 100 15 11.4 11.6 10 1n6375 icte-10/mpte-10 11.7 1 2 90 16.7 13.7 14.1 10 1n6383 icte-10c/mpte-10c 11.7 1 2 90 16.7 14.1 14.5 12 1n6376 icte-12/mpte-12 14.1 1 2 70 21.2 16.1 16.5 12 1n6384 icte-12c/mpte-12c 14.1 1 2 70 21.2 16.7 17.1 15 1n6377 icte-15/mpte-15 17.6 1 2 60 25 20.1 20.6 15 1n6385 icte-15c/mpte-15c 17.6 1 2 60 25 20.8 21.4 18 1n6378 icte-18/mpte-18 21.2 1 2 50 30 24.2 25.2 18 1n6386 icte-18c/mpte-18c 21.2 1 2 50 30 24.8 25.5 22 1n6379 icte-22/mpte-22 25.9 1 2 40 37.5 29.8 32 22 1n6387 icte-22c/mpte-22c 25.9 1 2 40 37.5 30.8 32 36 1n6380 icte-36/mpte-36 42.4 1 2 23 65.2 50.6 54.3 36 1n6388 icte-36c/mpte-36c 42.4 1 2 23 65.2 50.6 54.3 45 1n6381 icte-45/mpte-45 52.9 1 2 19 78.9 63.3 70 45 1n6389 icte-45c/mpte-45c 52.9 1 2 19 78.9 63.3 70 1n6382 thru 1n6389 and c suffix icte/mpte device types are bidirectional. bidirectional devices have cathode polarity band on each end. all other device types are unidirectional only. (consult factory for availability)
http://onsemi.com 26 tvs e in axial leads (continued) table 7. peak power dissipation, 1500 watts @ 1 ms surge case 41a mosorb 01234 56 i rsm i rsm time (ms) surge current characterisitcs 2 case 41a plastic cathode = polarity band electrical characteristics (t a = 25 c unless otherwise noted) v f = 3.5 v max, i f = 100 a pulse breakdown voltage working maxim m maximum reverse vlt v br volts @i t working peak reverse voltage maximum reverse leaka g e maximum reverse surge current voltage @ i rsm (clamping voltage) nom @ i t pulse (ma) jedec device device voltage v rwm (volts) leakage @ v rwm i r ( m a) c u rrent i rsm (amps) voltage) v rsm (volts) 6.8 10 1n6267a 1.5ke6.8a 5.8 1000 143 10.5 7.5 10 1n6268a 1.5ke7.5a 6.4 500 132 11.3 8.2 10 1n6269a 1.5ke8.2a 7.02 200 124 12.1 9.1 1 1n6270a 1.5ke9.1a 7.78 50 112 13.4 10 1 1n6271a 1.5ke10a 8.55 10 103 14.5 11 1 1n6272a 1.5ke11a 9.4 5 96 15.6 12 1 1n6273a 1.5ke12a 10.2 5 90 16.7 13 1 1n6274a 1.5ke13a 11.1 5 82 18.2 15 1 1n6275a 1.5ke15a 12.8 5 71 21.2 16 1 1n6276a 1.5ke16a 13.6 5 67 22.5 18 1 1n6277a 1.5ke18a 15.3 5 59.5 25.2 20 1 1n6278a 1.5ke20a 17.1 5 54 27.7 22 1 1n6279a 1.5ke22a 18.8 5 49 30.6 24 1 1n6280a 1.5ke24a 20.5 5 45 33.2 27 1 1n6281a 1.5ke27a 23.1 5 40 37.5 30 1 1n6282a 1.5ke30a 25.6 5 36 41.4 33 1 1n6283a 1.5ke33a 28.2 5 33 45.7 36 1 1n6284a 1.5ke36a 30.8 5 30 49.9 39 1 1n6285a 1.5ke39a 33.3 5 28 53.9 43 1 1n6286a 1.5ke43a 36.8 5 25.3 59.3 47 1 1n6287a 1.5ke47a 40.2 5 23.2 64.8 51 1 1n6288a 1.5ke51a 43.6 5 21.4 70.1 56 1 1n6289a 1.5ke56a 47.8 5 19.5 77 62 1 1n6290a 1.5ke62a 53 5 17.7 85 68 1 1n6291a 1.5ke68a 58.1 5 16.3 92 75 1 1n6292a 1.5ke75a 64.1 5 14.6 103 82 1 1n6293a 1.5ke82a 70.1 5 13.3 113 91 1 1n6294a 1.5ke91a 77.8 5 12 125 100 1 1n6295a 1.5ke100a 85.5 5 11 137 110 1 1n6296a 1.5ke110a 94 5 9.9 152 120 1 1n6297a 1.5ke120a 102 5 9.1 165 130 1 1n6298a 1.5ke130a 111 5 8.4 179 for bidirectional types use ca suffix on 1.5ke series only. bidirectional devices have cathode polarity band on each end. (consult factory for availability) 1n6267-6303a series do not have ca option since the ca is not included in eia registration.
http://onsemi.com 27 tvs e in axial leads (continued) table 7. peak power dissipation, 1500 watts @ 1 ms surge case 41a mosorb (continued) electrical characteristics (t a = 25 c unless otherwise noted) v f = 3.5 v max, i f = 100 a pulse breakdown voltage working maxim m maximum reverse vlt v br volts @i t working peak reverse voltage maximum reverse leaka g e maximum reverse surge current voltage @ i rsm (clamping voltage) nom @ i t pulse (ma) jedec device device voltage v rwm (volts) leakage @ v rwm i r ( m a) c u rrent i rsm (amps) voltage) v rsm (volts) 150 1 1n6299a 1.5ke150a 128 5 7.2 207 160 1 1n6300a 1.5ke160a 136 5 6.8 219 170 1 1n6301a 1.5ke170a 145 5 6.4 234 180 1 1n6302a 1.5ke180a 154 5 6.1 246 200 1 1n6303a 1.5ke200a 171 5 5.5 274 220 1 1.5ke220a 185 5 4.6 328 250 1 1.5ke250a 214 5 5 344 for bidirectional types use ca suffix. bidirectional devices have cathode polarity band on each end. (consult factory for availability). 1n6267-6303a series do not have ca option since the ca is not included in eia registration.
http://onsemi.com 28 tvs e in surface mount table 8. 1pmt series unidirectional overvoltage transient suppressors, 175 watts peak power @ 1 ms surge electrical characteristics (t l = 30 c unless otherwise noted) (v f = 1.25 volts @ 200 ma) device marking v rwm (v) v br @ i t (v) (note 2.) i t i r @ v rwm v c @ i pp i pp (a) device marking (note 1.) min nom max (ma) ( m a) (v) (note 3.) powermite case 45704 plastic 01234 56 i rsm i rsm time (ms) surge current characterisitcs 2 1pmt5.0at3 mke 5.0 6.4 6.7 7.0 10 800 9.2 19 1pmt7.0at3 mkm 7.0 7.78 8.2 8.6 10 500 12 14.6 1pmt12at3 mle 12 13.3 14 14.7 1.0 5.0 19.9 8.8 1pmt16at3 mlp 16 17.8 18.75 19.7 1.0 5.0 26 7.0 1pmt18at3 mlt 18 20 21 22.1 1.0 5.0 29.2 6.0 1pmt22at3 mlx 22 24.4 25.6 26.9 1.0 5.0 35.5 4.9 1pmt24at3 mlz 24 26.7 28.1 29.5 1.0 5.0 38.9 4.5 1pmt26at3 mme 26 28.9 30.4 31.9 1.0 5.0 42.1 4.2 1pmt28at3 mmg 28 31.1 32.8 34.4 1.0 5.0 45.4 3.9 1pmt30at3 mmk 30 33.3 35.1 36.8 1.0 5.0 48.4 3.6 1pmt33at3 mmm 33 36.7 38.7 40.6 1.0 5.0 53.3 3.3 1pmt36at3 mmp 36 40 42.1 44.2 1.0 5.0 58.1 3.0 1pmt40at3 mmr 40 44.4 46.8 49.1 1.0 5.0 64.5 2.7 1pmt48at3 mmx 48 53.3 56.1 58.9 1.0 5.0 77.4 2.3 1pmt51at3 mmz 51 56.7 59.7 62.7 1.0 5.0 82.4 2.1 1pmt58at3 mng 58 64.4 67.8 71.2 1.0 5.0 93.6 1.9 1. a transient suppressor is normally selected according to the working peak reverse voltage (v rwm ) which should be equal to or greater than the dc or continuous peak operating voltage level. 2. v br measured at pulse test current i t at ambient temperature of 25 c. 3. 10 x 1000 m s exponential decay surge waveform.
http://onsemi.com 29 tvs e in surface mount (continued) table 9. 1sma series unidirectional overvoltage transient suppressors; 400 watts peak power @ 1 ms surge electrical characteristics (v f = 3.5 volts @ i f = 40 a for all types) working peak breakdown voltage maximum reverse voltage maximum reverse maximum device peak reverse voltage v rwm (volts) v br volts (min) i t ma reverse voltage @ i rsm (clamping volt- age) v c (volts) reverse surge current i pp (amps) maxim u m reverse leakage @ v rwm i r ( m a) device marking sma case 403b01 plastic 01234 56 i rsm i rsm time (ms) surge current characterisitcs 2 1sma5.0at3 5.0 6.4 10 9.2 43.5 400 qe 1sma6.0at3 6.0 6.67 10 10.3 38.8 400 qg 1sma6.5at3 6.5 7.22 10 11.2 35.7 250 qk 1sma7.0at3 7.0 7.78 10 12.0 33.3 250 qm 1sma7.5at3 7.5 8.33 1 12.9 31.0 50 qp 1sma8.0at3 8.0 8.89 1 13.6 29.4 25 qr 1sma8.5at3 8.5 9.44 1 14.4 27.8 5.0 qt 1sma9.0at3 9.0 10 1 15.4 26.0 2.5 qv 1sma10at3 10 11.1 1 17.0 23.5 2.5 qx 1sma11at3 11 12.2 1 18.2 22.0 2.5 qz 1sma12at3 12 13.3 1 19.9 20.1 2.5 re 1sma13at3 13 14.4 1 21.5 18.6 2.5 rg 1sma14at3 14 15.6 1 23.2 17.2 2.5 rk 1sma15at3 15 16.7 1 24.4 16.4 2.5 rm 1sma16at3 16 17.8 1 26.0 15.4 2.5 rp 1sma17at3 17 18.9 1 27.6 14.5 2.5 rr 1sma18at3 18 20 1 29.2 13.7 2.5 rt 1sma20at3 20 22.2 1 32.4 12.3 2.5 rv 1sma22at3 22 24.4 1 35.5 11.3 2.5 rx 1sma24at3 24 26.7 1 38.9 10.3 2.5 rz 1sma26at3 26 28.9 1 42.1 9.5 2.5 se 1sma28at3 28 31.1 1 45.4 8.8 2.5 sg 1sma30at3 30 33.3 1 48.4 8.3 2.5 sk 1sma33at3 33 36.7 1 53.3 7.5 2.5 sm 1sma36at3 36 40 1 58.1 6.9 2.5 sp 1sma40at3 40 44.4 1 64.5 6.2 2.5 sr 1sma43at3 43 47.8 1 69.4 5.8 2.5 st 1sma45at3 45 50 1 72.2 5.5 2.5 sv 1sma48at3 48 53.3 1 77.4 5.2 2.5 sx 1sma51at3 51 56.7 1 82.4 4.9 2.5 sz 1sma54at3 54 60 1 87.1 4.6 2.5 te 1sma58at3 58 64.4 1 93.6 4.8 2.5 tg 1sma60at3 60 66.7 1 96.8 4.1 2.5 tk 1sma64at3 64 71.1 1 103.0 3.9 2.5 tm 1sma70at3 70 77.8 1 113.0 3.5 2.5 tp 1sma75at3 75 83.3 1 121.0 3.3 2.5 tr 1sma78at3 78 86.7 1 126.0 3.2 2.5 ts
http://onsemi.com 30 tvs e in surface mount (continued) table 10. 1sma series bidirectional zener overvoltage transient suppressors; 400 watts peak power @ 1 ms surge electrical characteristics working peak breakdown voltage maximum reverse voltage maximum reverse maximum device peak reverse voltage v rwm (volts) v br volts (min) i t ma reverse voltage @ i rsm (clamping voltage) v c (volts) reverse surge cur- rent i pp (amps) maxim u m reverse leakage @ v rwm i r ( m a) devce marking sma case 403b01 plastic 01234 56 i rsm i rsm time (ms) surge current characterisitcs 2 1sma10cat3 10 11.1 1 17.0 23.5 2.5 qxc 1sma11cat3 11 12.2 1 18.2 22.0 2.5 qzc 1sma12cat3 12 13.3 1 19.9 20.1 2.5 rec 1sma13cat3 13 14.4 1 21.5 18.6 2.5 rgc 1sma14cat3 14 15.6 1 23.2 17.2 2.5 rkc 1sma15cat3 15 16.7 1 24.4 16.4 2.5 rmc 1sma16cat3 16 17.8 1 26.0 15.4 2.5 rpc 1sma17cat3 17 18.9 1 27.6 14.5 2.5 rrc 1sma18cat3 18 20 1 29.2 13.7 2.5 rtc 1sma20cat3 20 22.2 1 32.4 12.3 2.5 rvc 1sma22cat3 22 24.4 1 35.5 11.3 2.5 rxc 1sma24cat3 24 26.7 1 38.9 10.3 2.5 rzc 1sma26cat3 26 28.9 1 42.1 9.5 2.5 sec 1sma28cat3 28 31.1 1 45.4 8.8 2.5 sgc 1sma30cat3 30 33.3 1 48.4 8.3 2.5 skc 1sma33cat3 33 36.7 1 53.3 7.5 2.5 smc 1sma36cat3 36 40 1 58.1 6.9 2.5 spc 1sma40cat3 40 44.4 1 64.5 6.2 2.5 src 1sma43cat3 43 47.8 1 69.4 5.8 2.5 stc 1sma45cat3 45 50 1 72.2 5.5 2.5 svc 1sma48cat3 48 53.3 1 77.4 5.2 2.5 sxc 1sma51cat3 51 56.7 1 82.4 4.9 2.5 szc 1sma54cat3 54 60 1 87.1 4.6 2.5 tec 1sma58cat3 58 64.4 1 93.6 4.3 2.5 tgc 1sma60cat3 60 66.7 1 96.8 4.1 2.5 tkc 1sma64cat3 64 71.1 1 103.0 3.9 2.5 tmc 1sma70cat3 70 77.8 1 113.0 3.5 2.5 tpc 1sma75cat3 75 83.3 1 121.0 3.3 2.5 trc 1sma78cat3 78 86.7 1 126.0 3.2 2.5 tsc
http://onsemi.com 31 tvs e in surface mount (continued) table 11. 1smb series unidirectional overvoltage transient suppressors; 600 watts peak power @ 1ms surge electrical characteristics (t a = 25 c unless otherwise noted). working pkr breakdown voltage maximum cl i maximum rlk g peak reverse voltage v br @ i t clamping voltage peak p lse c rrent reverse leakage @v r device voltage v rwm volts volts min ma voltage v c @ i pp volts p u l se c urren t i pp amps @ v r i r m a device marking smb case 403a plastic 01234 56 i rsm i rsm time (ms) surge current characterisitcs 2 1smb5.0at3 1smb6.0at3 1smb6.5at3 1smb7.0at3 5.0 6.0 6.5 7.0 6.40 6.67 7.22 7.78 10 10 10 10 9.2 10.3 11.2 12.0 65.2 58.3 53.6 50.0 800 800 500 200 ke kg kk km 1smb7.5at3 1smb8.0at3 1smb8.5at3 1smb9.0at3 7.5 8.0 8.5 9.0 8.33 8.89 9.44 10.0 1.0 1.0 1.0 1.0 12.9 13.6 14.4 15.4 46.5 44.1 41.7 39.0 100 50 10 5.0 kp kr kt kv 1smb10at3 1smb11at3 1smb12at3 1smb13at3 10 11 12 13 11.1 12.2 13.3 14.4 1.0 1.0 1.0 1.0 17.0 18.2 19.9 21.5 35.3 33.0 30.2 27.9 5.0 5.0 5.0 5.0 kx kz le lg 1smb14at3 1smb15at3 1smb16at3 1smb17at3 14 15 16 17 15.6 16.7 17.8 18.9 1.0 1.0 1.0 1.0 23.2 24.4 26.0 27.6 25.8 24.0 23.1 21.7 5.0 5.0 5.0 5.0 lk lm lp lr 1smb18at3 1smb20at3 1smb22at3 1smb24at3 18 20 22 24 20.0 22.2 24.4 26.7 1.0 1.0 1.0 1.0 29.2 32.4 35.5 38.9 20.5 18.5 16.9 15.4 5.0 5.0 5.0 5.0 lt lv lx lz 1smb26at3 1smb28at3 1smb30at3 1smb33at3 26 28 30 33 28.9 31.1 33.3 36.7 1.0 1.0 1.0 1.0 42.1 45.4 48.4 53.3 14.2 13.2 12.4 11.3 5.0 5.0 5.0 5.0 me mg mk mm 1smb36at3 1smb40at3 1smb43at3 1smb45at3 36 40 43 45 40.0 44.4 47.8 50.0 1.0 1.0 1.0 1.0 58.1 64.5 69.4 72.7 10.3 9.3 8.6 8.3 5.0 5.0 5.0 5.0 mp mr mt mv 1smb48at3 1smb51at3 1smb54at3 1smb58at3 48 51 54 58 53.3 56.7 60.0 64.4 1.0 1.0 1.0 1.0 77.4 82.4 87.1 93.6 7.7 7.3 6.9 6.4 5.0 5.0 5.0 5.0 mx mz ne ng 1smb60at3 1smb64at3 1smb70at3 1smb75at3 60 64 70 75 66.7 71.1 77.8 83.3 1.0 1.0 1.0 1.0 96.8 103 113 121 6.2 5.8 5.3 4.9 5.0 5.0 5.0 5.0 nk nm np nr 1smb78at3 1smb85at3 1smb90at3 1smb100at3 78 85 90 100 86.7 94.4 100 111 1.0 1.0 1.0 1.0 126 137 146 162 4.7 4.4 4.1 3.7 5.0 5.0 5.0 5.0 nt nv nx nz a transient suppressor is normally selected according to the reverse working peak reverse voltage (v rwm ) which should be equal to or greater than the dc or continuous peak operating voltage level.
http://onsemi.com 32 tvs e in surface mount (continued) table 11. 1smb series unidirectional overvoltage transient suppressors; 600 watts peak power @ 1 ms surge (continued) electrical characteristics (t a = 25 c unless otherwise noted). working pkr breakdown voltage maximum cl i maximum rlk g peak reverse voltage v br @ i t clamping voltage peak p lse c rrent reverse leakage @v r device voltage v rwm volts volts min ma voltage v c @ i pp volts p u l se c urren t i pp amps @ v r i r m a device marking smb case 403a plastic 01234 56 i rsm i rsm time (ms) surge current characterisitcs 2 1smb110at3 1smb120at3 1smb130at3 1smb150at3 110 120 130 150 122 133 144 167 1.0 1.0 1.0 1.0 177 193 209 243 3.4 3.1 2.9 2.5 5.0 5.0 5.0 5.0 pe pg pk pm 1smb160at3 1smb170at3 160 170 178 189 1.0 1.0 259 275 2.3 2.2 5.0 5.0 pp pr a transient suppressor is normally selected according to the reverse working peak reverse voltage (v rwm ) which should be equal to or greater than the dc or continuous peak operating voltage level.
http://onsemi.com 33 tvs e in surface mount (continued) table 12. 1smb series bidirectional overvoltage transient suppressors; 600 watts peak power @ 1ms surge electrical characteristics (t a = 25 c unless otherwise noted). working pkr breakdown voltage maximum cl i maximum rlk g peak reverse voltage v br @ i t clamping voltage peak p lse c rrent reverse leakage @v r device voltage v rwm volts volts min ma voltage v c @ i pp volts p u l se c urren t i pp amps @ v r i r m a device marking smb case 403a plastic 01234 56 i rsm i rsm time (ms) surge current characterisitcs 2 1smb10cat3 1smb11cat3 1smb12cat3 1smb13cat3 10 11 12 13 11.1 12.2 13.3 14.4 1.0 1.0 1.0 1.0 17.0 18.2 19.9 21.5 35.3 33.0 30.2 27.9 5.0 5.0 5.0 5.0 kxc kzc lec lgc 1smb14cat3 1smb15cat3 1smb16cat3 1smb17cat3 14 15 16 17 15.6 16.7 17.8 18.9 1.0 1.0 1.0 1.0 23.2 24.4 26.0 27.6 25.8 24.0 23.1 21.7 5.0 5.0 5.0 5.0 lkc lmc lpc lrc 1smb18cat3 1smb20cat3 1smb22cat3 1smb24cat3 18 20 22 24 20.0 22.2 24.4 26.7 1.0 1.0 1.0 1.0 29.2 32.4 35.5 38.9 20.5 18.5 16.9 15.4 5.0 5.0 5.0 5.0 ltc lvc lxc lzc 1smb26cat3 1smb28cat3 1smb30cat3 1smb33cat3 26 28 30 33 28.9 31.1 33.3 36.7 1.0 1.0 1.0 1.0 42.1 45.4 48.4 53.3 14.2 13.2 12.4 11.3 5.0 5.0 5.0 5.0 mec mgc mkc mmc 1smb36cat3 1smb40cat3 1smb43cat3 1smb45cat3 36 40 43 45 40.0 44.4 47.8 50.0 1.0 1.0 1.0 1.0 58.1 64.5 69.4 72.7 10.3 9.3 8.6 8.3 5.0 5.0 5.0 5.0 mpc mrc mtc mvc 1smb48cat3 1smb51cat3 1smb54cat3 1smb58cat3 48 51 54 58 53.3 56.7 60.0 64.4 1.0 1.0 1.0 1.0 77.4 82.4 87.1 93.6 7.7 7.3 6.9 6.4 5.0 5.0 5.0 5.0 mxc mzc nec ngc 1smb60cat3 1smb64cat3 1smb70cat3 1smb75cat3 60 64 70 75 66.7 71.1 77.8 83.3 1.0 1.0 1.0 1.0 96.8 103 113 121 6.2 5.8 5.3 4.9 5.0 5.0 5.0 5.0 nkc nmc npc nrc 1smb78cat3 78 86.7 1.0 126 4.7 5.0 ntc a transient suppressor is normally selected according to the reverse working peak reverse voltage (v rwm ) which should be equal to or greater than the dc or continuous peak operating voltage level.
http://onsemi.com 34 tvs e in surface mount (continued) table 13. p6smb series unidirectional overvoltage transient suppressors; 600 watts peak power @ 1 ms surge electrical characteristics (t a = 25 c unless otherwise noted) v f = 3.5 v max, i f = 50 a for all types. breakdown voltage workin g maximum maximum maximum reverse volta g e v br @ i t volts working peak reverse voltage maxim u m reverse leakage @ v rwm maxim u m reverse surge current voltage @ i pp (clamping voltage) maximum temperature coefficient device min nom max ma voltage v rwm volts @ v rwm i r m a current i pp amps voltage) v c volts coefficient of v br %/ c device marking smb case 403a plastic 01234 56 i rsm i rsm time (ms) surge current characterisitcs 2 p6smb6.8at3 p6smb7.5at3 p6smb8.2at3 p6smb9.1at3 6.45 7.13 7.79 8.65 6.8 7.5 8.2 9.1 7.14 7.88 8.61 9.55 10 10 10 1 5.8 6.4 7.02 7.78 1000 500 200 50 57 53 50 45 10.5 11.3 12.1 13.4 0.057 0.061 0.065 0.068 6v8a 7v5a 8v2a 9v1a p6smb10at3 p6smb11at3 p6smb12at3 p6smb13at3 9.5 10.5 11.4 12.4 10 11 12 13 10.5 11.6 12.6 13.7 1 1 1 1 8.55 9.4 10.2 11.1 10 5 5 5 41 38 36 33 14.5 15.6 16.7 18.2 0.073 0.075 0.078 0.081 10a 11a 12a 13a p6smb15at3 p6smb16at3 p6smb18at3 p6smb20at3 14.3 15.2 17.1 19 15 16 18 20 15.8 16.8 18.9 21 1 1 1 1 12.8 13.6 15.3 17.1 5 5 5 5 28 27 24 22 21.2 22.5 25.2 27.7 0.084 0.086 0.088 0.09 15a 16a 18a 20a p6smb22at3 p6smb24at3 p6smb27at3 p6smb30at3 20.9 22.8 25.7 28.5 22 24 27 30 23.1 25.2 28.4 31.5 1 1 1 1 18.8 20.5 23.1 25.6 5 5 5 5 20 18 16 14.4 30.6 33.2 37.5 41.4 0.092 0.094 0.096 0.097 22a 24a 27a 30a p6smb33at3 p6smb36at3 p6smb39at3 p6smb43at3 31.4 34.2 37.1 40.9 33 36 39 43 34.7 37.8 41 45.2 1 1 1 1 28.2 30.8 33.3 36.8 5 5 5 5 13.2 12 11.2 10.1 45.7 49.9 53.9 59.3 0.098 0.099 0.1 0.101 33a 36a 39a 43a p6smb47at3 p6smb51at3 p6smb56at3 p6smb62at3 44.7 48.5 53.2 58.9 47 51 56 62 49.4 53.6 58.8 65.1 1 1 1 1 40.2 43.6 47.8 53 5 5 5 5 9.3 8.6 7.8 7.1 64.8 70.1 77 85 0.101 0.102 0.103 0.104 47a 51a 56a 62a p6smb68at3 p6smb75at3 p6smb82at3 p6smb91at3 64.6 71.3 77.9 86.5 68 75 82 91 71.4 78.8 86.1 95.5 1 1 1 1 58.1 64.1 70.1 77.8 5 5 5 5 6.5 5.8 5.3 4.8 92 103 113 125 0.104 0.105 0.105 0.106 68a 75a 82a 91a p6smb100at3 p6smb110at3 p6smb120at3 p6smb130at3 95 105 114 124 100 110 120 130 105 116 126 137 1 1 1 1 85.5 94 102 111 5 5 5 5 4.4 4 3.6 3.3 137 152 165 179 0.106 0.107 0.107 0.107 100a 110a 120a 130a p6smb150at3 p6smb160at3 p6smb170at3 p6smb180at3 143 152 162 171 150 160 170 180 158 168 179 189 1 1 1 1 128 136 145 154 5 5 5 5 2.9 2.7 2.6 2.4 207 219 234 246 0.108 0.108 0.108 0.108 150a 160a 170a 180a p6smb200at3 190 200 210 1 171 5 2.2 274 0.108 200a
http://onsemi.com 35 tvs e in surface mount (continued) table 14. p6smb series bidirectional overvoltage transient suppressors; 600 watts peak power @ 1 ms surge electrical characteristics (t a = 25 c unless otherwise noted) v f = 3.5 v max, i f = 50 a for all types. breakdown voltage workin g maximum maximum maximum reverse volta g e v br @ i t volts working peak reverse voltage maxim u m reverse leakage @ v rwm maxim u m reverse surge current voltage @ i pp (clamping voltage) maximum temperature coefficient device min nom max ma voltage v rwm volts @ v rwm i r m a current i pp amps voltage) v c volts coefficient of v br %/ c device marking smb case 403a plastic 01234 56 i rsm i rsm time (ms) surge current characterisitcs 2 p6smb11cat3 p6smb12cat3 p6smb13cat3 10.5 11.4 12.4 11 12 13 11.6 12.6 13.7 1 1 1 9.4 10.2 11.1 5 5 5 38 36 33 15.6 16.7 18.2 0.075 0.078 0.081 11c 12c 13c p6smb15cat3 p6smb16cat3 p6smb18cat3 p6smb20cat3 14.3 15.2 17.1 19 15 16 18 20 15.8 16.8 18.9 21 1 1 1 1 12.8 13.6 15.3 17.1 5 5 5 5 28 27 24 22 21.2 22.5 25.2 27.7 0.084 0.086 0.088 0.09 15c 16c 18c 20c p6smb22cat3 p6smb24cat3 p6smb27cat3 p6smb30cat3 20.9 22.8 25.7 28.5 22 24 27 30 23.1 25.2 28.4 31.5 1 1 1 1 18.8 20.5 23.1 25.6 5 5 5 5 20 18 16 14.4 30.6 33.2 37.5 41.4 0.092 0.094 0.096 0.097 22c 24c 27c 30c p6smb33cat3 p6smb36cat3 p6smb39cat3 p6smb43cat3 31.4 34.2 37.1 40.9 33 36 39 43 34.7 37.8 41 45.2 1 1 1 1 28.2 30.8 33.3 36.8 5 5 5 5 13.2 12 11.2 10.1 45.7 49.9 53.9 59.3 0.098 0.099 0.1 0.101 33c 36c 39c 43c p6smb47cat3 p6smb51cat3 p6smb56cat3 p6smb62cat3 44.7 48.5 53.2 58.9 47 51 56 62 49.4 53.6 58.8 65.1 1 1 1 1 40.2 43.6 47.8 53 5 5 5 5 9.3 8.6 7.8 7.1 64.8 70.1 77 85 0.101 0.102 0.103 0.104 47c 51c 56c 62c p6smb68cat3 p6smb75cat3 p6smb82cat3 p6smb91cat3 64.6 71.3 77.9 86.5 68 75 82 91 71.4 78.8 86.1 95.5 1 1 1 1 58.1 64.1 70.1 77.8 5 5 5 5 6.5 5.8 5.3 4.8 92 103 113 125 0.104 0.105 0.105 0.106 68c 75c 82c 91c
http://onsemi.com 36 tvs e in surface mount (continued) table 15. ismc series unidirectional overvoltage transient suppressors; 1500 watts peak power @ 1 ms surge electrical characteristics (t a = 25 c unless otherwise noted). working peak breakdown voltage* maximum maximum p ea k reverse voltage v br @ i t m ax i mum clamping voltage peak p lse c rrent m ax i mum reverse leakage @v device voltage v r volts volts min ma voltage v c @ i pp volts pulse current i pp amps @ v r i r m a device marking smc case 403b plastic 01234 56 i rsm i rsm time (ms) surge current characterisitcs 2 1smc5.0at3 1smc6.0at3 1smc6.5at3 1smc7.0at3 5.0 6.0 6.5 7.0 6.40 6.67 7.22 7.78 10 10 10 10 9.2 10.3 11.2 12.0 163.0 145.6 133.9 125.0 1000 1000 500 200 gde gdg gdk gdm 1smc7.5at3 1smc8.0at3 1smc8.5at3 1smc9.0at3 7.5 8.0 8.5 9.0 8.33 8.89 9.44 10.0 1.0 1.0 1.0 1.0 12.9 13.6 14.4 15.4 116.3 110.3 104.2 97.4 100 50 20 10 gdp gdr gdt gdv 1smc10at3 1smc11at3 1smc12at3 1smc13at3 10 11 12 13 11.1 12.2 13.3 14.4 1.0 1.0 1.0 1.0 17.0 18.2 19.9 21.5 88.2 82.4 75.3 69.7 5.0 5.0 5.0 5.0 gdx gdz gee geg 1smc14at3 1smc15at3 1smc16at3 1smc17at3 14 15 16 17 15.6 16.7 17.8 18.9 1.0 1.0 1.0 1.0 23.2 24.4 26.0 27.6 64.7 61.5 57.7 53.3 5.0 5.0 5.0 5.0 gek gem gep ger 1smc18at3 1smc20at3 1smc22at3 1smc24at3 18 20 22 24 20.0 22.2 24.4 26.7 1.0 1.0 1.0 1.0 29.2 32.4 35.5 38.9 51.4 46.3 42.2 38.6 5.0 5.0 5.0 5.0 get gev gex gez 1smc26at3 1smc28at3 1smc30at3 1smc33at3 26 28 30 33 28.9 31.1 33.3 36.7 1.0 1.0 1.0 1.0 42.1 45.4 48.4 53.3 35.6 33.0 31.0 28.1 5.0 5.0 5.0 5.0 gfe gfg gfk gfm 1smc36at3 1smc40at3 1smc43at3 1smc45at3 36 40 43 45 40.0 44.4 47.8 50.0 1.0 1.0 1.0 1.0 58.1 64.5 69.4 72.7 25.8 23.2 21.6 20.6 5.0 5.0 5.0 5.0 gfp gfr gft gfv 1smc48at3 1smc51at3 1smc54at3 1smc58at3 48 51 54 58 53.3 56.7 60.0 64.4 1.0 1.0 1.0 1.0 77.4 82.4 87.1 93.6 19.4 18.2 17.2 16.0 5.0 5.0 5.0 5.0 gfx gfz gge ggg 1smc60at3 1smc64at3 1smc70at3 1smc75at3 60 64 70 75 66.7 71.1 77.8 83.3 1.0 1.0 1.0 1.0 96.8 103 113 121 15.5 14.6 13.3 12.4 5.0 5.0 5.0 5.0 ggk ggm ggp ggr 1smc78at3 78 86.7 1.0 126 11.4 5.0 ggt a transient suppressor is normally selected according to the reverse working peak reverse voltage (v rwm ) which should be equal to or greater than the dc or continuous peak operating voltage level.
http://onsemi.com 37 tvs e in surface mount (continued) table 16. 1.5 smc series unidirectional overvoltage transient suppressors; 1500 watts peak power @ 1 ms surge electrical characteristics (t a = 25 c unless otherwise noted) v f = 3.5 v max, i f = 100 a for all types. breakdown voltage workin g maximum maximum maximum reverse volta g e v br @ i t volts working peak reverse voltage maxim u m reverse leakage @ v rwm maxim u m reverse surge current voltage @ i pp (clamping voltage) maximum temperature coefficient device min nom max ma voltage v rwm volts @ v rwm i r m a current i pp amps voltage) v c volts coefficient of v br %/ c device marking smc case 403 plastic 01234 56 i rsm i rsm time (ms) surge current characterisitcs 2 1.5smc6.8at3 1.5smc7.5at3 1.5smc8.2at3 1.5smc9.1at3 6.45 7.13 7.79 8.65 6.8 7.5 8.2 9.1 7.14 7.88 8.61 9.55 10 10 10 1 5.8 6.4 7.02 7.78 1000 500 200 50 143 132 124 112 10.5 11.3 12.1 13.4 0.057 0.061 0.065 0.068 6v8a 7v5a 8v2a 9v1a 1.5smc10at3 1.5smc11at3 1.5smc12at3 1.5smc13at3 9.5 10.5 11.4 12.4 10 11 12 13 10.5 11.6 12.6 13.7 1 1 1 1 8.55 9.4 10.2 11.1 10 5 5 5 103 96 90 82 14.5 15.6 16.7 18.2 0.073 0.075 0.078 0.081 10a 11a 12a 13a 1.5smc15at3 1.5smc16at3 1.5smc18at3 1.5smc20at3 14.3 15.2 17.1 19 15 16 18 20 15.8 16.8 18.9 21 1 1 1 1 12.8 13.6 15.3 17.1 5 5 5 5 71 67 59.5 54 21.2 22.5 25.2 27.7 0.084 0.086 0.088 0.09 15a 16a 18a 20a 1.5smc22at3 1.5smc24at3 1.5smc27at3 1.5smc30at3 20.9 22.8 25.7 28.5 22 24 27 30 23.1 25.2 28.4 31.5 1 1 1 1 18.8 20.5 23.1 25.6 5 5 5 5 49 45 40 36 30.6 33.2 37.5 41.4 0.092 0.094 0.096 0.097 22a 24a 27a 30a 1.5smc33at3 1.5smc36at3 1.5smc39at3 1.5smc43at3 31.4 34.2 37.1 40.9 33 36 39 43 34.7 37.8 41 45.2 1 1 1 1 28.2 30.8 33.3 36.8 5 5 5 5 33 30 28 25.3 45.7 49.9 53.9 59.3 0.098 0.099 0.1 0.101 33a 36a 39a 43a 1.5smc47at3 1.5smc51at3 1.5smc56at3 1.5smc62at3 44.7 48.5 53.2 58.9 47 51 56 62 49.4 53.6 58.8 65.1 1 1 1 1 40.2 43.6 47.8 53 5 5 5 5 23.2 21.4 19.5 17.7 64.8 70.1 77 85 0.101 0.102 0.103 0.104 47a 51a 56a 62a 1.5smc68at3 1.5smc75at3 1.5smc82at3 1.5smc91at3 64.6 71.3 77.9 86.5 68 75 82 91 71.4 78.8 86.1 95.5 1 1 1 1 58.1 64.1 70.1 77.8 5 5 5 5 16.3 14.6 13.3 12 92 103 113 125 0.104 0.105 0.105 0.106 68a 75a 82a 91a
http://onsemi.com 38 multiple tvs e duals in surface mount mmbz15vdlt1 e common cathode series table 17. sot23 bipolar zener overvoltage transient suppressor; 40 watts peak power (10 x 1000 s) electrical characteristics (t a = 25 c unless otherwise noted) bidirectional (circuit tied to pins 1 and 2) (v f = 0.9 v max @ i f = 10 ma) breakdown voltage reverse voltage max max reverse max reverse voltage @ i pp maximum device v br (note 1.) (v) @ i t (ma) voltage working peak v max reverse leakage current reverse surge current i voltage @ i pp (clamping voltage) v maximum temperature coefficient of v br min nom max (ma) v rwm (v) c u rrent i r (na) i pp (a) v c (v) v br (mv/ c) 1 2 3 case 31808 to236ab low profile sot23 1 3 2 mmbz15vdlt1 14.3 15 15.8 1.0 12.8 100 1.9 21.2 12 (v f = 1.1 v max @ i f = 200 ma) mmbz27vclt1 25.65 27 28.35 1.0 22 50 1.0 38 26 1. v br measured at pulse test current i t at an ambient temperature of 25 c. mmbz5v6alt1 e common anode series table 18. sot23 dual zener overvoltage transient suppressor; 24 watts peak power (10 x 1000 s) electrical characteristics (t a = 25 c unless otherwise noted) unidirectional (circuit tied to pins 1 and 3 or pins 2 and 3) (v f = 0.9 v max @ i f = 10 ma) breakdown voltage max reverse leakage current max zener impedance (note 3.) max reverse s rge max reverse voltage @ i pp max temp co device v br (note 2.) (v) @ i t (ma) i r @ v r ( m a) (v) z zt @ i zt ( w ) (ma) z zk @ i zk ( w ) (ma) s urge current i pp (a) i pp (clamping voltage) v c c o efficient of v br (mv/ c) min nom max ( m a) ( m a) (v) ( w ) ( m a) ( w ) ( m a) (a) v c (v) (mv/ c) 1 2 3 case 31808 style 12 low profile sot23 plastic 1 3 2 mmbz5v6alt1 5.32 5.6* 5.88 20 5.0 3.0 11 1600 0.25 3.0 8.0 1.26 mmbz6v2alt1 5.89 6.2* 6.51 1.0 0.5 3.0 e e e 2.76 8.7 2.80 (v f = 1.1 v max @ i f = 200 ma) mmbz6v8alt1 6.46 6.8 7.14 1.0 0.5 4.5 e e e 2.5 9.6 3.40 mmbz9v1alt1 8.65 9.1 9.56 1.0 0.3 6.0 e e e 1.7 14 7.50 mmbz10valt1 9.50 10 10.5 1.0 0.3 6.5 1.7 14.2 7.50 2. v br measured at pulse test current i t at an ambient temperature of 25 c. 3. z zt and z zk are measured by dividing the ac voltage drop across the device by the ac current supplied. the specified limits are i z(ac) = 0.1 i z(dc) , with ac frequency = 1 khz. *other voltages are available; please contact product marketing.
http://onsemi.com 39 multiple tvs e duals in surface mount (continued) mmbz5v6alt1 e common anode series (continued) table 19. sot23 dual zener overvoltage transient suppressor; 40 watts peak power (10 x 1000 s) electrical characteristics (t a = 25 c unless otherwise noted) unidirectional (circuit tied to pins 1 and 3 or pins 2 and 3) (v f = 1.1 v max @ i f = 200 ma) breakdown voltage reverse vlt max max r max reverse vl @ maximum device v br (note 4.) (v) @ i t (ma) voltage working peak v rwm max reverse leakage current i (na) reverse surge current i pp voltage @ i pp (clamping volta g e ) maxim u m temperature coefficient of v br (mv/ c) min nom max ( m a) v rwm (volts) i r (na) i pp (a) voltage) v c (v) (mv/ c) 1 2 3 case 31808 style 12 low profile sot23 plastic 1 3 2 mmbz12valt1 11.40 12 12.60 1.0 8.5 200 2.35 17 7.50 mmbz15valt1 14.25 15 15.75 1.0 12.0 50 1.9 21 12.30 mmbz18valt1 17.10 18 18.90 1.0 14.5 50 1.6 25 15.30 mmbz20valt1 19.00 20 21.00 1.0 17.0 50 1.4 28 17.20 mmbz27valt1 25.65 27 28.35 1.0 22.0 50 1.0 40 24.30 mmbz33valt1 31.35 33 34.65 1.0 26.0 50 0.87 46 30.40 4. v br measured at pulse test current i t at an ambient temperature of 25 c.
http://onsemi.com 40 multiple tvs e quads in surface mount mmqa series table 20. sc74 quad transient voltage suppressor; 24 watts peak power (10 x 1000 s), 150 watts peak power (8.0 x 20 s) electrical characteristics (t a = 25 c unless otherwise noted) unidirectional (circuit tied to pins 1, 2, and 5; pins 2, 3, and 5; pins 2, 4, and 5; or pins 2, 5, and 6) (v f = 0.9 v max @ i f = 10 ma) breakdown voltage max reverse leakage current max zener im p edance max reverse s rge max reverse voltage @ i max temp coef v zt (v) @ i zt i r v rwm impedance surge current i pp (clamping voltage) coef ficient of v z device min nom max (ma) (na) (v) z zt @ i zt ( w ) (ma) i pp (a) v c (v) (mv/ c) case 318f-02 style 1 sc-74 plastic 1 2 3 6 5 4 4 5 6 1 2 3 mmqa5v6t1,t3 5.32 5.6 5.88 1.0 2000 3.0 400 3.0 8.0 1.26 mmqa6v2t1,t3 5.89 6.2 6.51 1.0 700 4.0 300 2.66 9.0 10.6 mmqa6v8t1,t3 6.46 6.8 7.14 1.0 500 4.3 300 2.45 9.8 10.9 mmqa12vt1,t3 11.4 12 12.6 1.0 75 9.1 80 1.39 17.3 14 mmqa13vt1,t3 12.4 13 13.7 1.0 75 9.8 80 1.29 18.6 15 mmqa15vt1,t3 14.3 15 15.8 1.0 75 11 80 1.1 21.7 16 mmqa18vt1,t3 17.1 18 18.9 1.0 75 14 80 0.923 26 19 mmqa20vt1,t3 19 20 21 1.0 75 15 80 0.84 28.6 20.1 mmqa21vt1,t3 20 21 22.1 1.0 75 16 80 0.792 30.3 21 mmqa22vt1,t3 20.9 22 23.1 1.0 75 17 80 0.758 31.7 22 mmqa24vt1,t3 22.8 24 25.2 1.0 75 18 100 0.694 34.6 25 mmqa27vt1,t3 25.7 27 28.4 1.0 75 21 125 0.615 39 28 mmqa30vt1,t3 28.5 30 31.5 1.0 75 23 150 0.554 43.3 32 mmqa33vt1,t3 31.4 33 34.7 1.0 75 25 200 0.504 48.6 37
http://onsemi.com 41 multiple tvs e quads in surface mount (continued) table 21. sc74 quad transient voltage suppressor; 40 watts peak power (10 x 1000 s), 350 watts peak power (8.0 x 20 s) electrical characteristics (t a = 25 c unless otherwise noted) unidirectional (circuit tied to pins 1, 2, and 5; pins 2, 3, and 5; pins 2, 4, and 5; or pins 2, 5, and 6) (v f = 0.9 v max @ i f = 10 ma) breakdown voltage max reverse leakage current max zener im p edance max reverse s rge max reverse voltage @ i max temp coef v zt (v) @ i zt i r v rwm impedance surge current i pp (clamping voltage) coef ficient of v z device min nom max (ma) (na) (v) z zt @ i zt ( w ) (ma) i pp (a) v c (v) (mv/ c) case 318f-02 style 1 sc-74 plastic 1 2 3 6 5 4 4 5 6 1 2 3 sms05t1 6.0 6.6 7.2 1000 5.0 23 15.5 msqa6v1w5 table 22. sc88a/sot353 quad array for esd protection; 150 watts (8.0 x 20 s) device breakdown voltage v br @ 1.0 ma (volts) leakage current i r @ v rwm = 3.0 v typical capacitance @ 0 v bias max v f @ i f = 200 ma min nom max ( m a) (pf) (v) case 419a sc88a/sot353 5 4 1 2 3 msqa6v1w5 6.1 6.6 7.2 1.0 90 1.25 note: contact on semiconductor sales for additional voltages.
http://onsemi.com 42 multiple tvs e quads in surface mount (continued) df6a6.8fu table 23. sc88 quad array for esd protection device breakdown voltage v br @ 1.0 ma (volts) maximum leakage current i r @ v rwm typical capacitance @ 0 v bias max v f @ i f = 10 ma min nom max ( m a) (pf) (v) case 419b sc88 (sot363) plastic 6 4 1 2 3 5 df6a6.8fu 6.4 6.8 7.2 1.0 40 1.25 note: contact on semiconductor sales for additional voltages.
http://onsemi.com 43 chapter 3 transient voltage suppressors axial leaded data sheets
http://onsemi.com 44
? semiconductor components industries, llc, 2001 march, 2001 rev. 4 45 publication order number: p6ke6.8a/d p6ke6.8a series 600 watt peak power surmetic -40 zener transient voltage suppressors unidirectional* the p6ke6.8a series is designed to protect voltage sensitive components from high voltage, high energy transients. they have excellent clamping capability, high surge capability, low zener impedance and fast response time. these devices are on semiconductor's exclusive, cost-effective, highly reliable surmetic axial leaded package and is ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. specification features: ? working peak reverse voltage range 5.8 to 171 v ? peak power 600 watts @ 1 ms ? esd rating of class 3 (>16 kv) per human body model ? maximum clamp voltage @ peak pulse current ? low leakage < 5 m a above 10 v ? maximum temperature coefficient specified ? ul 497b for isolated loop circuit protection ? response time is typically < 1 ns mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering: 230 c, 1/16 from the case for 10 seconds polarity: cathode indicated by polarity band mounting position: any maximum ratings rating symbol value unit peak power dissipation (note 1.) @ t l 25 c p pk 600 watts steady state power dissipation @ t l 75 c, lead length = 3/8 derated above t l = 75 c p d 5.0 50 watts mw/ c thermal resistance, junctiontolead r jl 15 c/w forward surge current (note 2.) @ t a = 25 c i fsm 100 amps operating and storage temperature range t j , t stg 55 to +150 c 1. nonrepetitive current pulse per figure 4 and derated above t a = 25 c per figure 2. 2. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, duty cycle = 4 pulses per minute maximum. *please see p6ke6.8ca p6ke200ca for bidirectional devices. device package shipping ordering information p6kexxxa axial lead 1000 units/box http://onsemi.com p6kexxxarl axial lead 4000/tape & reel axial lead case 17 style 1 l = assembly location p6kexxxa = on device code yy = year ww = work week l p6ke xxxa yyww cathode anode
unidirectional tvs i pp i f v i i r i t v rwm v c v br v f p6ke6.8a series http://onsemi.com 46 electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max. @ i f (note 6.) = 50 a) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current v br maximum temperature coefficient of v br i f forward current v f forward voltage @ i f
p6ke6.8a series http://onsemi.com 47 electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max. @ i f (note 6.) = 50 a) v rwm breakdown voltage v c @ i pp (note 5.) device v rwm (note 3.) i r @ v rwm v br (note 4.) (volts) @ i t v c i pp v br device d ev i ce marking volts m a min nom max ma volts a %/ c p6ke6.8a p6ke6.8a 5.8 1000 6.45 6.80 7.14 10 10.5 57 0.057 p6ke7.5a p6ke7.5a 6.4 500 7.13 7.51 7.88 10 11.3 53 0.061 p6ke8.2a p6ke8.2a 7.02 200 7.79 8.2 8.61 10 12.1 50 0.065 p6ke9.1a p6ke9.1a 7.78 50 8.65 9.1 9.55 1 13.4 45 0.068 p6ke10a p6ke10a 8.55 10 9.5 10 10.5 1 14.5 41 0.073 p6ke11a p6ke11a 9.4 5 10.5 11.05 11.6 1 15.6 38 0.075 p6ke12a p6ke12a 10.2 5 11.4 12 12.6 1 16.7 36 0.078 p6ke13a p6ke13a 11.1 5 12.4 13.05 13.7 1 18.2 33 0.081 p6ke15a p6ke15a 12.8 5 14.3 15.05 15.8 1 21.2 28 0.084 p6ke16a p6ke16a 13.6 5 15.2 16 16.8 1 22.5 27 0.086 p6ke18a p6ke18a 15.3 5 17.1 18 18.9 1 25.2 24 0.088 p6ke20a p6ke20a 17.1 5 19 20 21 1 27.7 22 0.09 p6ke22a p6ke22a 18.8 5 20.9 22 23.1 1 30.6 20 0.092 p6ke24a p6ke24a 20.5 5 22.8 24 25.2 1 33.2 18 0.094 p6ke27a p6ke27a 23.1 5 25.7 27.05 28.4 1 37.5 16 0.096 p6ke30a p6ke30a 25.6 5 28.5 30 31.5 1 41.4 14.4 0.097 p6ke33a p6ke33a 28.2 5 31.4 33.05 34.7 1 45.7 13.2 0.098 p6ke36a p6ke36a 30.8 5 34.2 36 37.8 1 49.9 12 0.099 p6ke39a p6ke39a 33.3 5 37.1 39.05 41 1 53.9 11.2 0.1 p6ke43a p6ke43a 36.8 5 40.9 43.05 45.2 1 59.3 10.1 0.101 p6ke47a p6ke47a 40.2 5 44.7 47.05 49.4 1 64.8 9.3 0.101 p6ke51a p6ke51a 43.6 5 48.5 51.05 53.6 1 70.1 8.6 0.102 p6ke56a p6ke56a 47.8 5 53.2 56 58.8 1 77 7.8 0.103 p6ke62a p6ke62a 53 5 58.9 62 65.1 1 85 7.1 0.104 p6ke68a p6ke68a 58.1 5 64.6 68 71.4 1 92 6.5 0.104 p6ke75a p6ke75a 64.1 5 71.3 75.05 78.8 1 103 5.8 0.105 p6ke82a p6ke82a 70.1 5 77.9 82 86.1 1 113 5.3 0.105 p6ke91a p6ke91a 77.8 5 86.5 91 95.5 1 125 4.8 0.106 p6ke100a p6ke100a 85.5 5 95 100 105 1 137 4.4 0.106 p6ke110a p6ke110a 94 5 105 110.5 116 1 152 4 0.107 p6ke120a p6ke120a 102 5 114 120 126 1 165 3.6 0.107 p6ke130a p6ke130a 111 5 124 130.5 137 1 179 3.3 0.107 p6ke150a p6ke150a 128 5 143 150.5 158 1 207 2.9 0.108 p6ke160a p6ke160a 136 5 152 160 168 1 219 2.7 0.108 p6ke170a p6ke170a 145 5 162 170.5 179 1 234 2.6 0.108 p6ke180a p6ke180a 154 5 171 180 189 1 246 2.4 0.108 p6ke200a p6ke200a 171 5 190 200 210 1 274 2.2 0.108 3. a transient suppressor is normally selected according to the maximum working peak reverse voltage (v rwm ), which should be equal to or greater than the dc or continuous peak operating voltage level. 4. v br measured at pulse test current i t at an ambient temperature of 25 c 5. surge current waveform per figure 4 and derate per figures 1 and 2. 6. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, duty cycle = 4 pulses per minute maximum.
p6ke6.8a series http://onsemi.com 48 100 10 1 0.1 0.1 m s1 m s10 m s 100 m s 1 ms 10 ms p p , peak power (kw) t p , pulse width nonrepetitive pulse waveform shown in figure 4 figure 1. pulse rating curve 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 peak pulse derating in % of peak power or current @ t a = 25 c t a , ambient temperature ( c) figure 2. pulse derating curve k derating factor 1 ms 10 m s 1 0.7 0.5 0.3 0.05 0.1 0.2 0.01 0.02 0.03 0.07 100 m s 0.1 0.2 0.5 2 5 10 50 1 20 100 d, duty cycle (%) pulse width 10 ms 10,000 1000 100 10 0.1 1 10 100 1000 c, capacitance (pf) v br , breakdown voltage (volts) figure 3. capacitance versus breakdown voltage measured @ v rwm measured @ zero bias 100 50 0 01 2 3 4 t, time (ms) value (%) t r 10 m s t p peak value i pp half value i pp 2 figure 4. pulse waveform pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . 5 4 3 2 1 25 50 75 100 125 150 175 200 p d , steady state power dissipation (watts) t l , lead temperature c) 3/8 3/8 figure 5. steady state power derating 0 0 figure 6. typical derating factor for duty cycle
p6ke6.8a series http://onsemi.com 49 application notes response time in most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. in this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. the capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in figure 7. the inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. this inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in figure 8. minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. the p6ke6.8a series has very good response time, typically < 1 ns and negligible inductance. however, external inductive effects could produce unacceptable overshoot. proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. some input impedance represented by z in is essential to prevent overstress of the protection device. this impedance should be as high as possible, without restricting the circuit operation. duty cycle derating the data of figure 1 applies for non-repetitive conditions and at a lead temperature of 25 c. if the duty cycle increases, the peak power must be reduced as indicated by the curves of figure 6. average power must be derated as the lead or ambient temperature rises above 25 c. the average power derating curve normally given on data sheets may be normalized and used for this purpose. at first glance the derating curves of figure 6 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 m s pulse. however, when the derating factor for a given pulse of figure 6 is multiplied by the peak power value of figure 1 for the same pulse, the results follow the expected trend. typical protection circuit v in v l v v in v in (transient) v l t d v v l v in (transient) z in load overshoot due to inductive effects t d = time delay due to capacitive effect tt figure 7. figure 8.
p6ke6.8a series http://onsemi.com 50 ul recognition* the entire series including the bidirectional ca suffix has underwriters laboratory recognition for the classification of protectors (qvgv2) under the ul standard for safety 497b and file #e 116110. many competitors only have one or two devices recognized or have recognition in a non-protective category. some competitors have no recognition at all. with the ul497b recognition, our parts successfully passed several tests including strike voltage breakdown test, endurance conditioning, t emperature test, dielectric voltage-withstand test, discharge test and several more. whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their protector category. *applies to p6ke6.8a, ca p6ke200a, ca.
? semiconductor components industries, llc, 2001 march, 2001 rev. 1 51 publication order number: p6ke6.8ca/d p6ke6.8ca series 600 watt peak power surmetic -40 zener transient voltage suppressors bidirectional* the p6ke6.8ca series is designed to protect voltage sensitive components from high voltage, high energy transients. they have excellent clamping capability, high surge capability, low zener impedance and fast response time. these devices are on semiconductor's exclusive, cost-effective, highly reliable surmetic axial leaded package and is ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. specification features: ? working peak reverse voltage range 5.8 to 171 v ? peak power 600 watts @ 1 ms ? esd rating of class 3 (>16 kv) per human body model ? maximum clamp voltage @ peak pulse current ? low leakage < 5 m a above 10 v ? maximum temperature coefficient specified ? ul 497b for isolated loop circuit protection ? response time is typically < 1 ns mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 230 c, 1/16o from the case for 10 seconds polarity: cathode band does not imply polarity mounting position: any maximum ratings rating symbol value unit peak power dissipation (note 1.) @ t l 25 c p pk 600 watts steady state power dissipation @ t l 75 c, lead length = 3/8 derated above t l = 75 c p d 5 50 watts mw/ c thermal resistance, junctiontolead r jl 15 c/w operating and storage temperature range t j , t stg 55 to +150 c 1. nonrepetitive current pulse per figure 3 and derated above t a = 25 c per figure 2. *please see p6ke6.8a p6ke200a for unidirectional devices. device package shipping ordering information p6kexxxca axial lead 1000 units/box axial lead case 17 plastic http://onsemi.com p6kexxxcarl axial lead 4000/tape & reel l = assembly location p6kexxxca = on device code yy = year ww = work week l p6ke xxxca yyww
bidirectional tvs i pp i pp v i i r i t i t i r v rwm v c v br v rwm v c v br p6ke6.8ca series http://onsemi.com 52 electrical characteristics (t a = 25 c unless otherwise noted) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current v br maximum temperature variation of v br
p6ke6.8ca series http://onsemi.com 53 electrical characteristics (t a = 25 c unless otherwise noted.) v rwm breakdown voltage v c @ i pp (note 4.) device v rwm (note 2.) i r @ v rwm v br (note 3.) (volts) @ i t v c i pp v br device d ev i ce marking (volts) ( m a) min nom max (ma) (volts) (a) (%/ c) p6ke6.8ca p6ke6.8ca 5.8 1000 6.45 6.80 7.14 10 10.5 57 0.057 p6ke7.5ca p6ke7.5ca 6.4 500 7.13 7.51 7.88 10 11.3 53 0.061 p6ke8.2ca p6ke8.2ca 7.02 200 7.79 8.2 8.61 10 12.1 50 0.065 p6ke9.1ca p6ke9.1ca 7.78 50 8.65 9.1 9.55 1 13.4 45 0.068 p6ke10ca p6ke10ca 8.55 10 9.5 10 10.5 1 14.5 41 0.073 p6ke11ca p6ke11ca 9.4 5 10.5 11.05 11.6 1 15.6 38 0.075 p6ke12ca p6ke12ca 10.2 5 11.4 12 12.6 1 16.7 36 0.078 p6ke13ca p6ke13ca 11.1 5 12.4 13.05 13.7 1 18.2 33 0.081 p6ke15ca p6ke15ca 12.8 5 14.3 15.05 15.8 1 21.2 28 0.084 p6ke16ca p6ke16ca 13.6 5 15.2 16 16.8 1 22.5 27 0.086 p6ke18ca p6ke18ca 15.3 5 17.1 18 18.9 1 25.2 24 0.088 p6ke20ca p6ke20ca 17.1 5 19 20 21 1 27.7 22 0.09 p6ke22ca p6ke22ca 18.8 5 20.9 22 23.1 1 30.6 20 0.092 p6ke24ca p6ke24ca 20.5 5 22.8 24 25.2 1 33.2 18 0.094 p6ke27ca p6ke27ca 23.1 5 25.7 27.05 28.4 1 37.5 16 0.096 p6ke30ca p6ke30ca 25.6 5 28.5 30 31.5 1 41.4 14.4 0.097 p6ke33ca p6ke33ca 28.2 5 31.4 33.05 34.7 1 45.7 13.2 0.098 p6ke36ca p6ke36ca 30.8 5 34.2 36 37.8 1 49.9 12 0.099 p6ke39ca p6ke39ca 33.3 5 37.1 39.05 41 1 53.9 11.2 0.1 p6ke43ca p6ke43ca 36.8 5 40.9 43.05 45.2 1 59.3 10.1 0.101 p6ke47ca p6ke47ca 40.2 5 44.7 47.05 49.4 1 64.8 9.3 0.101 p6ke51ca p6ke51ca 43.6 5 48.5 51.05 53.6 1 70.1 8.6 0.102 p6ke56ca p6ke56ca 47.8 5 53.2 56 58.8 1 77 7.8 0.103 p6ke62ca p6ke62ca 53 5 58.9 62 65.1 1 85 7.1 0.104 p6ke68ca p6ke68ca 58.1 5 64.6 68 71.4 1 92 6.5 0.104 p6ke75ca p6ke75ca 64.1 5 71.3 75.05 78.8 1 103 5.8 0.105 p6ke82ca p6ke82ca 70.1 5 77.9 82 86.1 1 113 5.3 0.105 p6ke91ca p6ke91ca 77.8 5 86.5 91 95.5 1 125 4.8 0.106 p6ke100ca p6ke100ca 85.5 5 95 100 105 1 137 4.4 0.106 p6ke110ca p6ke110ca 94 5 105 110.5 116 1 152 4 0.107 p6ke120ca p6ke120ca 102 5 114 120 126 1 165 3.6 0.107 p6ke130ca p6ke130ca 111 5 124 130.5 137 1 179 3.3 0.107 p6ke150ca p6ke150ca 128 5 143 150.5 158 1 207 2.9 0.108 p6ke160ca p6ke160ca 136 5 152 160 168 1 219 2.7 0.108 p6ke170ca p6ke170ca 145 5 162 170.5 179 1 234 2.6 0.108 p6ke180ca p6ke180ca 154 5 171 180 189 1 246 2.4 0.108 p6ke200ca p6ke200ca 171 5 190 200 210 1 274 2.2 0.108 2. a transient suppressor is normally selected according to the maximum working peak reverse voltage (v rwm ), which should be equal to or greater than the dc or continuous peak operating voltage level. 3. v br measured at pulse test current i t at an ambient temperature of 25 c. 4. surge current waveform per figure 3 and derate per figures 1 and 2.
p6ke6.8ca series http://onsemi.com 54 100 10 1 0.1 0.1 s1 s10 s 100 s1 s10 s p p , peak power (kw) t p , pulse width nonrepetitive pulse waveform shown in figure 3 figure 1. pulse rating curve 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 peak pulse derating in % of peak power or current @ t a = 25 c t a , ambient temperature ( c) figure 2. pulse derating curve k derating factor 1 ms 10 s 1 0.7 0.5 0.3 0.05 0.1 0.2 0.01 0.02 0.03 0.07 100 s 0.1 0.2 0.5 2 5 10 50 1 20 100 d, duty cycle (%) pulse width 10 ms 100 50 0 01 234 t, time (ms) value (%) t p peak value i pp half value i pp 2 figure 3. pulse waveform pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . 5 4 3 2 1 25 50 75 100 125 150 175 200 p d , steady state power dissipation (watts) t l , lead temperature ( c) 3/8, 3/8, figure 4. steady state power derating 0 0 figure 5. typical derating factor for duty cycle t r 10 s
p6ke6.8ca series http://onsemi.com 55 application notes response time in most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. in this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. the capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in figure 6. the inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. this inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in figure 7. minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. the p6ke6.8a series has very good response time, typically < 1 ns and negligible inductance. however, external inductive effects could produce unacceptable overshoot. proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. some input impedance represented by z in is essential to prevent overstress of the protection device. this impedance should be as high as possible, without restricting the circuit operation. duty cycle derating the data of figure 1 applies for non-repetitive conditions and at a lead temperature of 25 c. if the duty cycle increases, the peak power must be reduced as indicated by the curves of figure 5. average power must be derated as the lead or ambient temperature rises above 25 c. the average power derating curve normally given on data sheets may be normalized and used for this purpose. at first glance the derating curves of figure 5 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 m s pulse. however, when the derating factor for a given pulse of figure 5 is multiplied by the peak power value of figure 1 for the same pulse, the results follow the expected trend. typical protection circuit v in v l v v in v in (transient) v l t d v v l v in (transient) z in load overshoot due to inductive effects t d = time delay due to capacitive effect tt figure 6. figure 7.
p6ke6.8ca series http://onsemi.com 56 ul recognition* the entire series including the bidirectional ca suffix has underwriters laboratory recognition for the classification of protectors (qvgv2) under the ul standard for safety 497b and file #e 116110. many competitors only have one or two devices recognized or have recognition in a non-protective category. some competitors have no recognition at all. with the ul497b recognition, our parts successfully passed several tests including strike voltage breakdown test, endurance conditioning, t emperature test, dielectric voltage-withstand test, discharge test and several more. whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their protector category. *applies to p6ke6.8a, ca p6ke200a, ca.
? semiconductor components industries, llc, 2001 march, 2001 rev. 3 57 publication order number: 1n6267a/d 1n6267a series 1500 watt mosorb ? zener transient voltage suppressors unidirectional* mosorb devices are designed to protect voltage sensitive components from high voltage, highenergy transients. they have excellent clamping capability, high surge capability, low zener impedance and fast response time. these devices are on semiconductor's exclusive, cost-effective, highly reliable surmetic ? axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect cmos, mos and bipolar integrated circuits. specification features: ? working peak reverse voltage range 5.8 v to 214 v ? peak power 1500 watts @ 1 ms ? esd rating of class 3 (>16 kv) per human body model ? maximum clamp voltage @ peak pulse current ? low leakage < 5 m a above 10 v ? ul 497b for isolated loop circuit protection ? response time is typically < 1 ns mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 230 c, 1/16 from the case for 10 seconds polarity: cathode indicated by polarity band mounting position: any maximum ratings rating symbol value unit peak power dissipation (note 1.) @ t l 25 c p pk 1500 watts steady state power dissipation @ t l 75 c, lead length = 3/8 derated above t l = 75 c p d 5.0 20 watts mw/ c thermal resistance, junctiontolead r jl 20 c/w forward surge current (note 2.) @ t a = 25 c i fsm 200 amps operating and storage temperature range t j , t stg 65 to +175 c 1. nonrepetitive current pulse per figure 5 and derated above t a = 25 c per figure 2. 2. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, duty cycle = 4 pulses per minute maximum. *please see 1.5ke6.8ca to 1.5ke250ca for bidirectional devices devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. axial lead case 41a plastic http://onsemi.com l = assembly location 1n6xxxa = jedec device code 1.5kexxxa = on device code yy = year ww = work week cathode anode device package shipping ordering information 1.5kexxxa axial lead 500 units/box 1.5kexxxarl4 axial lead 1500/tape & reel 1n6xxxa axial lead 500 units/box 1n6xxxarl4 axial lead 1500/tape & reel l 1n6 xxxa 1.5ke xxxa yyww
unidirectional tvs i pp i f v i i r i t v rwm v c v br v f 1n6267a series http://onsemi.com 58 electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max., i f (note 3.) = 100 a) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current v br maximum temperature coefficient of v br i f forward current v f forward voltage @ i f
1n6267a series http://onsemi.com 59 electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max. @ i f (note 3.) = 100 a) v rwm breakdown voltage v c @ i pp (note 7.) jedec device v rwm (note 5.) i r @ v rwm v br (note 6.) (volts) @ i t v c i pp v br device d ev i ce (note 4.) (volts) ( m a) min nom max (ma) (volts) (a) (%/ c) 1.5ke6.8a 1n6267a 5.8 1000 6.45 6.8 7.14 10 10.5 143 0.057 1.5ke7.5a 1n6268a 6.4 500 7.13 7.5 7.88 10 11.3 132 0.061 1.5ke8.2a 1n6269a 7.02 200 7.79 8.2 8.61 10 12.1 124 0.065 1.5ke9.1a 1n6270a 7.78 50 8.65 9.1 9.55 1 13.4 112 0.068 1.5ke10a 1n6271a 8.55 10 9.5 10 10.5 1 14.5 103 0.073 1.5ke11a 1n6272a 9.4 5 10.5 11 11.6 1 15.6 96 0.075 1.5ke12a 1n6273a 10.2 5 11.4 12 12.6 1 16.7 90 0.078 1.5ke13a 1n6274a 11.1 5 12.4 13 13.7 1 18.2 82 0.081 1.5ke15a 1n6275a 12.8 5 14.3 15 15.8 1 21.2 71 0.084 1.5ke16a 1n6276a 13.6 5 15.2 16 16.8 1 22.5 67 0.086 1.5ke18a 1n6277a 15.3 5 17.1 18 18.9 1 25.2 59.5 0.088 1.5ke20a 1n6278a 17.1 5 19 20 21 1 27.7 54 0.09 1.5ke22a 1n6279a 18.8 5 20.9 22 23.1 1 30.6 49 0.092 1.5ke24a 1n6280a 20.5 5 22.8 24 25.2 1 33.2 45 0.094 1.5ke27a 1n6281a 23.1 5 25.7 27 28.4 1 37.5 40 0.096 1.5ke30a 1n6282a 25.6 5 28.5 30 31.5 1 41.4 36 0.097 1.5ke33a 1n6283a 28.2 5 31.4 33 34.7 1 45.7 33 0.098 1.5ke36a 1n6284a 30.8 5 34.2 36 37.8 1 49.9 30 0.099 1.5ke39a 1n6285a 33.3 5 37.1 39 41 1 53.9 28 0.1 1.5ke43a 1n6286a 36.8 5 40.9 43 45.2 1 59.3 25.3 0.101 1.5ke47a 1n6287a 40.2 5 44.7 47 49.4 1 64.8 23.2 0.101 1.5ke51a 1n6288a 43.6 5 48.5 51 53.6 1 70.1 21.4 0.102 1.5ke56a 1n6289 47.8 5 53.2 56 58.8 1 77 19.5 0.103 1.5ke62a 1n6290a 53 5 58.9 62 65.1 1 85 17.7 0.104 1.5ke68a 1n6291a 58.1 5 64.6 68 71.4 1 92 16.3 0.104 1.5ke75a 1n6292a 64.1 5 71.3 75 78.8 1 103 14.6 0.105 1.5ke82a 1n6293a 70.1 5 77.9 82 86.1 1 113 13.3 0.105 1.5ke91a 1n6294a 77.8 5 86.5 91 95.5 1 125 12 0.106 1.5ke100a 1n6295a 85.5 5 95 100 105 1 137 11 0.106 1.5ke110a 1n6296a 94 5 105 110 116 1 152 9.9 0.107 1.5ke120a 1n6297a 102 5 114 120 126 1 165 9.1 0.107 1.5ke130a 1n6298a 111 5 124 130 137 1 179 8.4 0.107 1.5ke150a 1n6299a 128 5 143 150 158 1 207 7.2 0.108 1.5ke160a 1n6300a 136 5 152 160 168 1 219 6.8 0.108 1.5ke170a 1n6301a 145 5 162 170 179 1 234 6.4 0.108 1.5ke180a 1n6302a 154 5 171 180 189 1 246 6.1 0.108 1.5ke200a 1n6303a 171 5 190 200 210 1 274 5.5 0.108 1.5ke220a 185 5 209 220 231 1 328 4.6 0.109 1.5ke250a 214 5 237 250 263 1 344 5 0.109 3. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, duty cycle = 4 pulses per minute maximum. 4. indicates jedec registered data 5. a transient suppressor is normally selected according to the maximum working peak reverse voltage (v rwm ), which should be equal to or greater than the dc or continuous peak operating voltage level. 6. v br measured at pulse test current i t at an ambient temperature of 25 c 7. surge current waveform per figure 5 and derate per figures 1 and 2.
1n6267a series http://onsemi.com 60 figure 1. pulse rating curve 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 peak pulse derating in % of peak power or current @ t a = 25 c t a , ambient temperature ( c) figure 2. pulse derating curve 5 4 3 2 1 25 50 75 100 125 150 175 200 p d , steady state power dissipation (watts) t l , lead temperature ( c) 3/8 3/8 0 0 100 50 0 01 2 3 4 t, time (ms) , value (%) t r t p peak value - i pp half value - i pp 2 pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . tr 10 m s 1 m s 10 m s 100 m s 1 ms 10 ms 100 10 1 t p , pulse width p pk , peak power (kw) nonrepetitive pulse waveform shown in figure 5 0.1 m s i pp figure 3. capacitance versus breakdown voltage 1n6267a/1.5ke6.8a through 1n6303a/1.5ke200a v br , breakdown voltage (volts) 1 10 100 1000 10,000 1000 100 10 c, capacitance (pf) measured @ v rwm measured @ zero bias figure 4. steady state power derating figure 5. pulse waveform 1n6373, icte-5, mpte-5, through 1n6389, icte-45, c, mpte-45, c v br , breakdown voltage (volts) 1 10 100 1000 10,000 1000 100 10 c, capacitance (pf) measured @ zero bias measured @ v rwm
1n6267a series http://onsemi.com 61 1n6373, icte-5, mpte-5, through 1n6389, icte-45, c, mpte-45, c 1.5ke6.8ca through 1.5ke200ca figure 6. dynamic impedance 1000 500 200 100 50 20 10 5 2 1 1000 500 200 100 50 20 10 5 2 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 d v br , instantaneous increase in v br above v br(nom) (volts) 0.3 0.5 0.7 1 2 3 5 7 10 20 30 d v br , instantaneous increase in v br above v br(nom) (volts) i t , test current (amps) v br(nom) =6.8 to 13v t l =25 c t p =10 m s v br(nom) =6.8 to 13v 20v 24v 43v 75v 180v 120v 20v 24v 43v figure 7. typical derating factor for duty cycle derating factor 1 ms 10 m s 1 0.7 0.5 0.3 0.05 0.1 0.2 0.01 0.02 0.03 0.07 100 m s 0.1 0.2 0.5 2 5 10 50 1 20 100 d, duty cycle (%) pulse width 10 ms t l =25 c t p =10 m s i t , test current (amps) application notes response time in most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. in this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. the capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in figure 8. the inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. this inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in figure 9. minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. these devices have excellent response time, typically in the picosecond range and negligible inductance. however, external inductive effects could produce unacceptable overshoot. proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. some input impedance represented by z in is essential to prevent overstress of the protection device. this impedance should be as high as possible, without restricting the circuit operation. duty cycle derating the data of figure 1 applies for non-repetitive conditions and at a lead temperature of 25 c. if the duty cycle increases, the peak power must be reduced as indicated by the curves of figure 7. average power must be derated as the lead or
1n6267a series http://onsemi.com 62 ambient temperature rises above 25 c. the average power derating curve normally given on data sheets may be normalized and used for this purpose. at first glance the derating curves of figure 7 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 m s pulse. however, when the derating factor for a given pulse of figure 7 is multiplied by the peak power value of figure 1 for the same pulse, the results follow the expected trend. typical protection circuit v in v l v v in v in (transient) v l t d v v l v in (transient) z in load overshoot due to inductive effects t d = time delay due to capacitive effect t t figure 8. figure 9. ul recognition* the entire series has underwriters laboratory recognition for the classification of protectors (qvgv2) under the ul standard for safety 497b and file #116110. many competitors only have one or two devices recognized or have recognition in a non-protective category. some competitors have no recognition at all. with the ul497b recognition, our parts successfully passed several tests including strike voltage breakdown test, endurance conditioning, temperature test, dielectric voltage- withstand test, discharge test and several more. whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their protector category. *applies to 1.5ke6.8a, ca thru 1.5ke250a, ca clipper bidirectional devices 1. clipper-bidirectional devices are available in the 1.5kexxa series and are designated with a acao suffix; for example, 1.5ke18ca. contact your nearest on semiconductor representative. 2. clipper-bidirectional part numbers are tested in both directions to electrical parameters in preceeding table (except for v f which does not apply). 3. the 1n6267a through 1n6303a series are jedec registered devices and the registration does not include a acao suffix. to order clipper-bidirectional devices one must add ca to the 1.5ke device title.
? semiconductor components industries, llc, 2001 march, 2001 rev. 5 63 publication order number: sa5.0a/d sa5.0a series 500 watt peak power minimosorb zener transient voltage suppressors unidirectional* the sa5.0a series is designed to protect voltage sensitive components from high voltage, high energy transients. they have excellent clamping capability, high surge capability, low zener impedance and fast response time. the sa5.0a series is supplied in on semiconductor's exclusive, cost-effective, highly reliable surmetic axial leaded package and is ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. specification features: ? working peak reverse voltage range 5 to 170 v ? peak power 500 watts @ 1 ms ? esd rating of class 3 (>16 kv) per human body model ? maximum clamp voltage @ peak pulse current ? low leakage < 1 m a above 8.5 v ? ul 497b for isolated loop circuit protection ? maximum temperature coefficient specified ? response time is typically < 1 ns mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering: 230 c, 1/16 from the case for 10 seconds polarity: cathode indicated by polarity band. mounting position: any maximum ratings rating symbol value unit peak power dissipation (note 1.) @ t l 25 c p pk 500 watts steady state power dissipation @ t l 75 c, lead length = 3/8 derated above t l = 75 c p d 3.0 30 watts mw/ c thermal resistance, junctiontolead r jl 33.3 c/w forward surge current (note 2.) @ t a = 25 c i fsm 70 amps operating and storage temperature range t j , t stg 55 to +175 c 1. nonrepetitive current pulse per figure 4 and derated above t a = 25 c per figure 2. 2. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, duty cycle = 4 pulses per minute *please see sa5.0ca sa170ca for bidirectional devices. device package shipping ordering information saxxxa axial lead 1000 units/box http://onsemi.com saxxxarl axial lead 5000/tape & reel axial lead case 59 plastic l = assembly location saxxxa = on device code yy = year ww = work week l sa xxxa yyww cathode anode devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value.
unidirectional tvs i pp i f v i i r i t v rwm v c v br v f sa5.0a series http://onsemi.com 64 electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max. @ i f (note 6.) = 35 a) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current v br maximum temperature variation of v br i f forward current v f forward voltage @ i f
sa5.0a series http://onsemi.com 65 electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max. @ i f (note 6.) = 35 a) v rwm breakdown voltage v c @ i pp (note 5.) device v rwm (note 3.) i r @ v rwm v br (note 4.) (volts) @ i t v c i pp v br device d ev i ce marking volts m a min nom max ma volts a mv/ c sa5.0a sa5.0a 5 600 6.4 6.7 7 10 9.2 54.3 5 sa6.0a sa6.0a 6 600 6.67 7.02 7.37 10 10.3 48.5 5 sa7.0a sa7.0a 7 150 7.78 8.19 8.6 10 12 41.7 6 sa7.5a sa7.5a 7.5 50 8.33 8.77 9.21 1 12.9 38.8 7 sa8.0a sa8.0a 8 25 8.89 9.36 9.83 1 13.6 36.7 7 sa8.5a sa8.5a 8.5 5 9.44 9.92 10.4 1 14.4 34.7 8 sa9.0a sa9.0a 9 1 10 10.55 11.1 1 15.4 32.5 9 sa10a sa10a 10 1 11.1 11.7 12.3 1 17 29.4 10 sa11a sa11a 11 1 12.2 12.85 13.5 1 18.2 27.4 11 sa12a sa12a 12 1 13.3 14 14.7 1 19.9 25.1 12 sa13a sa13a 13 1 14.4 15.15 15.9 1 21.5 23.2 13 sa14a sa14a 14 1 15.6 16.4 17.2 1 23.2 21.5 14 sa15a sa15a 15 1 16.7 17.6 18.5 1 24.4 20.6 16 sa16a sa16a 16 1 17.8 18.75 19.7 1 26 19.2 17 sa17a sa17a 17 1 18.9 19.9 20.9 1 27.6 18.1 19 sa18a sa18a 18 1 20 21.05 22.1 1 29.2 17.2 20 sa20a sa20a 20 1 22.2 23.35 24.5 1 32.4 15.4 23 sa22a sa22a 22 1 24.4 25.65 26.9 1 35.5 14.1 25 sa24a sa24a 24 1 26.7 28.1 29.5 1 38.9 12.8 28 sa26a sa26a 26 1 28.9 30.4 31.9 1 42.1 11.9 30 sa28a sa28a 28 1 31.1 32.75 34.4 1 45.4 11 31 sa30a sa30a 30 1 33.3 35.05 36.8 1 48.4 10.3 36 sa33a sa33a 33 1 36.7 38.65 40.6 1 53.3 9.4 39 sa36a sa36a 36 1 40 42.1 44.2 1 58.1 8.6 41 sa40a sa40a 40 1 44.4 46.55 49.1 1 64.5 7.8 46 sa43a sa43a 43 1 47.8 50.3 52.8 1 69.4 7.2 50 sa45a sa45a 45 1 50 52.65 55.3 1 72.7 6.9 52 sa48a sa48a 48 1 53.3 56.1 58.9 1 77.4 6.5 56 sa51a sa51a 51 1 56.7 59.7 62.7 1 82.4 6.1 61 sa58a sa58a 58 1 64.4 67.8 71.2 1 93.6 5.3 70 sa60a sa60a 60 1 66.7 70.2 73.7 1 96.8 5.2 71 sa64a sa64a 64 1 71.1 74.85 78.6 1 103 4.9 76 sa70a sa70a 70 1 77.8 81.9 86 1 113 4.4 85 sa78a sa78a 78 1 86.7 91.25 95.8 1 126 4.0 95 sa90a sa90a 90 1 100 105.5 111 1 146 3.4 110 sa100a sa100a 100 1 111 117 123 1 162 3.1 123 sa110a sa110a 110 1 122 128.5 135 1 177 2.8 133 sa120a sa120a 120 1 133 140 147 1 193 2.5 146 sa130a sa130a 130 1 144 151.5 159 1 209 2.4 158 sa150a sa150a 150 1 167 176 185 1 243 2.1 184 sa160a sa160a 160 1 178 187.5 197 1 259 1.9 196 sa170a sa170a 170 1 189 199 209 1 275 1.8 208 notes: 3. minimosorb transients suppressor is normally selected according to the maximum working peak reverse voltage (v rwm ), which should be equal to or greater than the dc or continuous peak operating voltage level. 4. v br measured at pulse test current i t at an ambient temperature of 25 c. 5. surge current waveform per figure 4 and derate per figures 1 and 2. 6. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, duty cycle = 4 pulses per minute
sa5.0a series http://onsemi.com 66 100 10 1 0.1 0.1 m s1 m s10 m s 100 m s 1ms 10ms p p , peak power (kw) t p , pulse width figure 1. pulse rating curve nonrepetitive pulse waveform shown in figure 4 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 peak pulse derating in % of peak power or current @ t a = 25 c t a , ambient temperature ( c) figure 2. pulse derating curve 10,000 1000 100 10 0.1 1 10 100 1000 c, capacitance (pf) v br , breakdown voltage (volts) measured @ zero bias figure 3. capacitance versus breakdown voltage 100 50 0 01 234 t, time (ms) value (%) pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . peak value i pp half value i pp 2 figure 4. pulse waveform 5 4 3 2 1 0 0 25 50 75 100 125 150 175 200 p d , steady state power dissipation (watts) t l , lead temperature ( c) 3/8 3/8 figure 5. steady state power derating t r 10 m s measured @ (v rwm ) t p k
sa5.0a series http://onsemi.com 67 ul recognition* the entire series including the bidirectional ca suffix has underwriters laboratory recognition for the classification of protectors (qvgv2) under the ul standard for safety 497b and file #e 116110. many competitors only have one or two devices recognized or have recognition in a non-protective category. some competitors have no recognition at all. with the ul497b recognition, our parts successfully passed several tests including strike voltage breakdown test, endurance conditioning, t emperature test, dielectric voltage-withstand test, discharge test and several more. whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their protector category. *applies to sa5.0a, ca sa170a, ca.
? semiconductor components industries, llc, 2001 march, 2001 rev. 1 68 publication order number: sa5.0ca/d sa5.0ca series 500 watt peak power minimosorb ? zener transient voltage suppressors bidirectional* the sa5.0ca series is designed to protect voltage sensitive components from high voltage, highenergy transients. they have excellent clamping capability, high surge capability, low zener impedance and fast response time. the sa5.0ca series is supplied in on semiconductor's exclusive, cost-effective, highly reliable surmetic axial leaded package and is ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. specification features: ? working peak reverse voltage range 5.0 to 170 v ? peak power 500 watts @ 1 ms ? esd rating of class 3 (>16 kv) per human body model ? maximum clamp voltage @ peak pulse current ? low leakage < 1 m a above 8.5 v ? ul 497b for isolated loop circuit protection ? maximum temperature coefficient specified ? response time is typically < 1 ns mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 230 c, 1/16 from the case for 10 seconds polarity: cathode band does not imply polarity mounting position: any maximum ratings rating symbol value unit peak power dissipation (note 1.) @ t l 25 c p pk 500 watts steady state power dissipation @ t l 75 c, lead length = 3/8 derated above t l = 75 c p d 3.0 30 watts mw/ c thermal resistance, junctiontolead r jl 33.3 c/w operating and storage temperature range t j , t stg 55 to +175 c 1. nonrepetitive current pulse per figure 3 and derated above t a = 25 c per figure 2. *please see sa5.0a to sa170a for unidirectional devices. device package shipping ordering information axial lead case 59 plastic http://onsemi.com saxxxca axial lead 1000 units/box saxxxcarl axial lead 5000/tape & reel l = assembly location saxxxca = on device code yy = year ww = work week l sa xxxca yyww devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value.
bidirectional tvs i pp i pp v i i r i t i t i r v rwm v c v br v rwm v c v br sa5.0ca series http://onsemi.com 69 electrical characteristics (t a = 25 c unless otherwise noted) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current v br maximum temperature variation of v br electrical characteristics (t a = 25 c unless otherwise noted.) v rwm breakdown voltage v c @ i pp (note 4.) device v rwm (note 2.) i r @ v rwm v br (note 3.) (volts) @ i t v c i pp v br device d ev i ce marking (volts) ( m a) min nom max (ma) (volts) (a) (mv/ c) sa5.0ca sa5.0ca 5 600 6.4 6.7 7 10 9.2 54.3 5 sa6.0ca sa6.0ca 6 600 6.67 7.02 7.37 10 10.3 48.5 5 sa6.5ca sa6.5ca 6.5 400 7.22 7.60 7.98 10 11.2 44.7 5 sa7.0ca sa7.0ca 7 150 7.78 8.19 8.6 10 12 41.7 6 sa7.5ca sa7.5ca 7.5 50 8.33 8.77 9.21 1 12.9 38.8 7 sa8.0ca sa8.0ca 8 25 8.89 9.36 9.83 1 13.6 36.7 7 sa8.5ca sa8.5ca 8.5 5 9.44 9.92 10.4 1 14.4 34.7 8 sa9.0ca sa9.0ca 9 1 10 10.55 11.1 1 15.4 32.5 9 sa10ca sa10ca 10 1 11.1 11.7 12.3 1 17 29.4 10 sa11ca sa11ca 11 1 12.2 12.85 13.5 1 18.2 27.4 11 sa12ca sa12ca 12 1 13.3 14 14.7 1 19.9 25.1 12 sa13ca sa13ca 13 1 14.4 15.15 15.9 1 21.5 23.2 13 sa14ca sa14ca 14 1 15.6 16.4 17.2 1 23.2 21.5 14 sa15ca sa15ca 15 1 16.7 17.6 18.5 1 24.4 20.6 16 sa16ca sa16ca 16 1 17.8 18.75 19.7 1 26 19.2 17 sa17ca sa17ca 17 1 18.9 19.9 20.9 1 27.6 18.1 19 sa18ca sa18ca 18 1 20 21.05 22.1 1 29.2 17.2 20 sa20ca sa20ca 20 1 22.2 23.35 24.5 1 32.4 15.4 23 sa22ca sa22ca 22 1 24.4 25.65 26.9 1 35.5 14.1 25 sa24ca sa24ca 24 1 26.7 28.1 29.5 1 38.9 12.8 28 sa26ca sa26ca 26 1 28.9 30.4 31.9 1 42.1 11.9 30 sa28ca sa28ca 28 1 31.1 32.75 34.4 1 454 11 31 sa30ca sa30ca 30 1 33.3 35.05 36.8 1 48.4 10.3 36 sa33ca sa33ca 33 1 36.7 38.65 40.6 1 53.3 9.4 39 sa36ca sa36ca 36 1 40 42.1 44.2 1 58.1 8.6 41 sa40ca sa40ca 40 1 44.4 46.55 49.1 1 64.5 7.8 46 sa43ca sa43ca 43 1 47.8 50.3 52.8 1 69.4 7.2 50 sa45ca sa45ca 45 1 50 52.65 55.3 1 72.7 6.9 52 sa48ca sa48ca 48 1 53.3 56.1 58.9 1 77.4 6.5 56 sa51ca sa51ca 51 1 56.7 59.7 62.7 1 82.4 6.1 61 sa58ca sa58ca 58 1 64.4 67.8 71.2 1 93.6 5.3 70 sa60ca sa60ca 60 1 66.7 70.2 73.7 1 96.8 5.2 71 notes: 2. minimosorb transient suppressors are normally selected according to the maximum working peak reverse voltage (v rwm ), which should be equal to or greater than the dc or continuous peak operating voltage level. 3. v br measured at pulse test current i t at an ambient temperature of 25 c. 4. surge current waveform per figure 3 and derate per figures 1 and 2.
sa5.0ca series http://onsemi.com 70 electrical characteristics (t a = 25 c unless otherwise noted.) v rwm breakdown voltage v c @ i pp (note 7.) device v rwm (note 5.) i r @ v rwm v br (note 6.) (volts) @ i t v c i pp v br device d ev i ce marking (volts) ( m a) min nom max (ma) (volts) (a) (mv/ c) sa64ca sa64ca 64 1 71.1 74.85 78.6 1 103 4.9 76 sa70ca sa70ca 70 1 77.8 81.9 86 1 113 4.4 85 sa78ca sa78ca 78 1 86.7 91.25 95.8 1 126 4.0 95 sa85ca sa85ca 85 1 94.4 99.2 104 1 137 3.6 103 sa90ca sa90ca 90 1 100 105.5 111 1 146 3.4 110 sa100ca sa100ca 100 1 111 117 123 1 162 3.1 123 sa110ca sa110ca 110 1 122 128.5 135 1 177 2.8 133 sa120ca sa120ca 120 1 133 140 147 1 193 2.5 146 sa130ca sa130ca 130 1 144 151.5 159 1 209 2.4 158 sa150ca sa150ca 150 1 167 176 185 1 243 2.1 184 sa160ca sa160ca 160 1 178 187.5 197 1 259 1.9 196 sa170ca sa170ca 170 1 189 199 209 1 275 1.8 208 notes: 5. minimosorb transient suppressors are normally selected according to the maximum working peak reverse voltage (v rwm ), which should be equal to or greater than the dc or continuous peak operating voltage level. 6. v br measured at pulse test current i t at an ambient temperature of 25 c. 7. surge current waveform per figure 3 and derate per figures 1 and 2. 100 10 1 0.1 0.1 ms 1 ms 10 ms 100 ms 1ms 10ms p p , peak power (kw) t p , pulse width figure 1. pulse rating curve nonrepetitive pulse waveform shown in figure 3 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 peak pulse derating in % of peak power or current @ t a = 25 c t a , ambient temperature ( c) figure 2. pulse derating curve 100 50 0 01 234 t, time (ms) value (%) pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . peak value - i pp half value - i pp 2 figure 3. pulse waveform 5 4 3 2 1 0 0 25 50 75 100 125 150 175 200 p d , steady state power dissipation (watts) t l , lead temperature ( c) 3/8 3/8 figure 4. steady state power derating t r 10 m s t p k
sa5.0ca series http://onsemi.com 71 ul recognition* the entire series including the bidirectional ca suffix has underwriters laboratory recognition for the classification of protectors (qvgv2) under the ul standard for safety 497b and file #e 116110. many competitors only have one or two devices recognized or have recognition in a non-protective category. some competitors have no recognition at all. with the ul497b recognition, our parts successfully passed several tests including strike voltage breakdown test, endurance conditioning, t emperature test, dielectric voltage-withstand test, discharge test and several more. whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their protector category. *applies to sa5.0a, ca sa170a, ca.
? semiconductor components industries, llc, 2001 march, 2001 rev. 0 72 publication order number: 1.5ke6.8ca/d 1.5ke6.8ca series 1500 watt mosorb ? zener transient voltage suppressors bidirectional* mosorb devices are designed to protect voltage sensitive components from high voltage, highenergy transients. they have excellent clamping capability, high surge capability, low zener impedance and fast response time. these devices are on semiconductor's exclusive, cost-effective, highly reliable surmetic axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/ consumer applications, to protect cmos, mos and bipolar integrated circuits. specification features: ? working peak reverse voltage range 5.8 v to 214 v ? peak power 1500 watts @ 1 ms ? esd rating of class 3 (>16 kv) per human body model ? maximum clamp voltage @ peak pulse current ? low leakage < 5 m a above 10 v ? ul 497b for isolated loop circuit protection ? response time is typically < 1 ns mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 230 c, 1/16 from the case for 10 seconds polarity: cathode band does not imply polarity mounting position: any maximum ratings rating symbol value unit peak power dissipation (note 1.) @ t l 25 c p pk 1500 watts steady state power dissipation @ t l 75 c, lead length = 3/8 derated above t l = 75 c p d 5.0 20 watts mw/ c thermal resistance, junctiontolead r jl 20 c/w operating and storage temperature range t j , t stg 65 to +175 c 1. nonrepetitive current pulse per figure 4 and derated above t a = 25 c per figure 2. *please see 1n6267a to 1n6306a (1.5ke6.8a 1.5ke250a) for unidirectional devices device packaging shipping ordering information 1.5kexxca axial lead 500 units/box 1.5kexxcarl4 axial lead axial lead case 41a plastic http://onsemi.com 1500/tape & reel l = assembly location 1n6xxxca = jedec device code 1.5kexxxca = on device code yy = year ww = work week l 1n6 xxxca 1.5ke xxxca yyww
bidirectional tvs i pp i pp v i i r i t i t i r v rwm v c v br v rwm v c v br 1.5ke6.8ca series http://onsemi.com 73 electrical characteristics (t a = 25 c unless otherwise noted) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current v br maximum temperature coefficient of v br
1.5ke6.8ca series http://onsemi.com 74 electrical characteristics (t a = 25 c unless otherwise noted.) v rwm breakdown voltage v c @ i pp (note 4.) v rwm (note 2.) i r @ v rwm v br (note 3.) (volts) @ i t v c i pp v br device (volts) ( m a) min nom max (ma) (volts) (a) (%/ c) 1.5ke6.8ca 5.8 1000 6.45 6.8 7.14 10 10.5 143 0.057 1.5ke7.5ca 6.4 500 7.13 7.5 7.88 10 11.3 132 0.061 1.5ke8.2ca 7.02 200 7.79 8.2 8.61 10 12.1 124 0.065 1.5ke9.1ca 7.78 50 8.65 9.1 9.55 1 13.4 112 0.068 1.5ke10ca 8.55 10 9.5 10 10.5 1 14.5 103 0.073 1.5ke11ca 9.4 5 10.5 11 11.6 1 15.6 96 0.075 1.5ke12ca 10.2 5 11.4 12 12.6 1 16.7 90 0.078 1.5ke13ca 11.1 5 12.4 13 13.7 1 18.2 82 0.081 1.5ke15ca 12.8 5 14.3 15 15.8 1 21.2 71 0.084 1.5ke16ca 13.6 5 15.2 16 16.8 1 22.5 67 0.086 1.5ke18ca 15.3 5 17.1 18 18.9 1 25.2 59.5 0.088 1.5ke20ca 17.1 5 19 20 21 1 27.7 54 0.09 1.5ke22ca 18.8 5 20.9 22 23.1 1 30.6 49 0.092 1.5ke24ca 20.5 5 22.8 24 25.2 1 33.2 45 0.094 1.5ke27ca 23.1 5 25.7 27 28.4 1 37.5 40 0.096 1.5ke30ca 25.6 5 28.5 30 31.5 1 41.4 36 0.097 1.5ke33ca 28.2 5 31.4 33 34.7 1 45.7 33 0.098 1.5ke36ca 30.8 5 34.2 36 37.8 1 49.9 30 0.099 1.5ke39ca 33.3 5 37.1 39 41 1 53.9 28 0.1 1.5ke43ca 36.8 5 40.9 43 45.2 1 59.3 25.3 0.101 1.5ke47ca 40.2 5 44.7 47 49.4 1 64.8 23.2 0.101 1.5ke51ca 43.6 5 48.5 51 53.6 1 70.1 21.4 0.102 1.5ke56ca 47.8 5 53.2 56 58.8 1 77 19.5 0.103 1.5ke62ca 53 5 58.9 62 65.1 1 85 17.7 0.104 1.5ke68ca 58.1 5 64.6 68 71.4 1 92 16.3 0.104 1.5ke75ca 64.1 5 71.3 75 78.8 1 103 14.6 0.105 1.5ke82ca 70.1 5 77.9 82 86.1 1 113 13.3 0.105 1.5ke91ca 77.8 5 86.5 91 95.5 1 125 12 0.106 1.5ke100ca 85.5 5 95 100 105 1 137 11 0.106 1.5ke110ca 94 5 105 110 116 1 152 9.9 0.107 1.5ke120ca 102 5 114 120 126 1 165 9.1 0.107 1.5ke130ca 111 5 124 130 137 1 179 8.4 0.107 1.5ke150ca 128 5 143 150 158 1 207 7.2 0.108 1.5ke160ca 136 5 152 160 168 1 219 6.8 0.108 1.5ke170ca 145 5 162 170 179 1 234 6.4 0.108 1.5ke180ca 154 5 171 180 189 1 246 6.1 0.108 1.5ke200ca 171 5 190 200 210 1 274 5.5 0.108 1.5ke220ca 185 5 209 220 231 1 328 4.6 0.109 1.5ke250ca 214 5 237 250 263 1 344 5 0.109 2. a transient suppressor is normally selected according to the maximum working peak reverse voltage (v rwm ), which should be equal to or greater than the dc or continuous peak operating voltage level. 3. v br measured at pulse test current i t at an ambient temperature of 25 c. 4. surge current waveform per figure 4 and derate per figures 1 and 2.
1.5ke6.8ca series http://onsemi.com 75 figure 1. pulse rating curve 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 peak pulse derating in % of peak power or current @ t a = 25 c t a , ambient temperature ( c) figure 2. pulse derating curve 5 4 3 2 1 25 50 75 100 125 150 175 200 p d , steady state power dissipation (watts) t l , lead temperature ( c) 3/8 3/8 figure 3. steady state power derating 0 0 100 50 0 01 2 3 4 t, time (ms) , value (%) tr 10 m s t p peak value i pp half value i pp 2 figure 4. pulse waveform pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . 1 m s10 m s 100 m s 1 ms 10 ms 100 10 1 t p , pulse width p pk , peak power (kw) nonrepetitive pulse waveform shown in figure 4 0.1 m s i pp 1n6373, icte-5, mpte-5, through 1n6389, icte-45, c, mpte-45, c 1.5ke6.8ca through 1.5ke200ca figure 5. dynamic impedance 1000 500 200 100 50 20 10 5 2 1 1000 500 200 100 50 20 10 5 2 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 d v br , instantaneous increase in v br above v br(nom) (volts) 0.3 0.5 0.7 1 2 3 5 7 10 20 30 d v br , instantaneous increase in v br above v br(nom) (volts) i t , test current (amps) v br(nom) = 6.8 to 13 v t l =25 c t p =10 m s 24 v 43 v 75 v 180 v 120 v 43 v t l =25 c t p =10 m s i t , test current (amps) v br(nom) = 6.8 to 13 v 24 v 20 v 20 v
1.5ke6.8ca series http://onsemi.com 76 figure 6. typical derating factor for duty cycle derating factor 1 ms 10 m s 1 0.7 0.5 0.3 0.05 0.1 0.2 0.01 0.02 0.03 0.07 100 m s 0.1 0.2 0.5 2 5 10 50 1 20 100 d, duty cycle (%) pulse width 10 ms application notes response time in most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. in this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. the capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in figure 7. the inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. this inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in figure 8. minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. these devices have excellent response time, typically in the picosecond range and negligible inductance. however, external inductive effects could produce unacceptable overshoot. proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. some input impedance represented by z in is essential to prevent overstress of the protection device. this impedance should be as high as possible, without restricting the circuit operation. duty cycle derating the data of figure 1 applies for non-repetitive conditions and at a lead temperature of 25 c. if the duty cycle increases, the peak power must be reduced as indicated by the curves of figure 6. average power must be derated as the lead or ambient temperature rises above 25 c. the average power derating curve normally given on data sheets may be normalized and used for this purpose. at first glance the derating curves of figure 6 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 m s pulse. however, when the derating factor for a given pulse of figure 6 is multiplied by the peak power value of figure 1 for the same pulse, the results follow the expected trend.
1.5ke6.8ca series http://onsemi.com 77 typical protection circuit v in v l v v in v in (transient) v l t d v v l v in (transient) z in load overshoot due to inductive effects t d = time delay due to capacitive effect t t figure 7. figure 8. ul recognition* the entire series has underwriters laboratory recognition for the classification of protectors (qvgv2) under the ul standard for safety 497b and file #116110. many competitors only have one or two devices recognized or have recognition in a non-protective category. some competitors have no recognition at all. with the ul497b recognition, our parts successfully passed several tests including strike voltage breakdown test, endurance conditioning, temperature test, dielectric voltage- withstand test, discharge test and several more. whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their protector category. *applies to 1.5ke6.8ca 1.5ke250ca clipper bidirectional devices 1. clipper-bidirectional devices are available in the 1.5kexxa series and are designated with a acao suffix; for example, 1.5ke18ca. contact your nearest on semiconductor representative. 2. clipper-bidirectional part numbers are tested in both directions to electrical parameters in preceeding table (except for v f which does not apply). 3. the 1n6267a through 1n6303a series are jedec registered devices and the registration does not include a acao suffix. to order clipper-bidirectional devices one must add ca to the 1.5ke device title.
? semiconductor components industries, llc, 2001 may, 2001 rev. 2 78 publication order number: 1n5908/d 1n5908 1500 watt mosorb ? zener transient voltage suppressors unidirectional* mosorb devices are designed to protect voltage sensitive components from high voltage, highenergy transients. they have excellent clamping capability, high surge capability, low zener impedance and fast response time. these devices are on semiconductor's exclusive, cost-effective, highly reliable surmetic ? axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect cmos, mos and bipolar integrated circuits. specification features: ? working peak reverse voltage range 5 v ? peak power 1500 watts @ 1 ms ? maximum clamp voltage @ peak pulse current ? low leakage < 5 m a above 10 v ? response time is typically < 1 ns mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 230 c, 1/16 from the case for 10 seconds polarity: cathode indicated by polarity band mounting position: any maximum ratings rating symbol value unit peak power dissipation (note 1.) @ t l 25 c p pk 1500 watts steady state power dissipation @ t l 75 c, lead length = 3/8 derated above t l = 75 c p d 5.0 50 watts mw/ c thermal resistance, junctiontolead r jl 20 c/w forward surge current (note 2.) @ t a = 25 c i fsm 200 amps operating and storage temperature range t j , t stg 65 to +175 c 1. nonrepetitive current pulse per figure 4 and derated above t a = 25 c per figure 2. 2. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, duty cycle = 4 pulses per minute maximum. * bidirectional device will not be available in this device axial lead case 41a plastic http://onsemi.com l = assembly location 1n5908 = jedec device code yy = year ww = work week cathode anode device package shipping ordering information 1n5908 axial lead 500 units/box 1n5908rl4 axial lead 1500/tape & reel l 1n 5908 yyww
unidirectional tvs i pp i f v i i r i t v rwm v c v br v f 1n5908 http://onsemi.com 79 electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max. @ i f (note 3.) = 100 a) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current i f forward current v f forward voltage @ i f electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max. @ i f (note 3. ) = 53 a) v rwm breakdown voltage v c (volts) (note 6.) device (note v rwm (note 4.) i r @ v rwm v br (note 5.) (volts) @ i t (n o t e no tag) (volts) ( m a) min nom max (ma) @ i pp = 120 a @ i pp = 60 a @ i pp = 30 a 1n5908 5.0 300 6.0 1.0 8.5 8.0 7.6
1n5908 http://onsemi.com 80 figure 1. pulse rating curve 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 peak pulse derating in % of peak power or current @ t a = 25 c t a , ambient temperature ( c) figure 2. pulse derating curve 5 4 3 2 1 25 50 75 100 125 150 175 200 p d , steady state power dissipation (watts) t l , lead temperature ( c) 3/8 3/8 figure 3. steady state power derating 0 0 100 50 0 01 2 3 4 t, time (ms) value (%) t r 10 m s t p peak value - i pp half value - i pp 2 figure 4. pulse waveform pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . 1 m s 10 m s 100 m s 1 ms 10 ms 100 10 1 t p , pulse width p pk , peak power (kw) nonrepetitive pulse waveform shown in figure 5 0.1 m s figure 5. typical derating factor for duty cycle derating factor 1 ms 10 m s 1 0.7 0.5 0.3 0.05 0.1 0.2 0.01 0.02 0.03 0.07 100 m s 0.1 0.2 0.5 2 5 10 50 1 20 100 d, duty cycle (%) pulse width 10 ms
1n5908 http://onsemi.com 81 application notes response time in most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. in this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. the capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in figure 6. the inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. this inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in figure 7. minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. these devices have excellent response time, typically in the picosecond range and negligible inductance. however, external inductive effects could produce unacceptable overshoot. proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. some input impedance represented by z in is essential to prevent overstress of the protection device. this impedance should be as high as possible, without restricting the circuit operation. duty cycle derating the data of figure 1 applies for non-repetitive conditions and at a lead temperature of 25 c. if the duty cycle increases, the peak power must be reduced as indicated by the curves of figure 5. average power must be derated as the lead or ambient temperature rises above 25 c. the average power derating curve normally given on data sheets may be normalized and used for this purpose. at first glance the derating curves of figure 5 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 m s pulse. however, when the derating factor for a given pulse of figure 5 is multiplied by the peak power value of figure 1 for the same pulse, the results follow the expected trend. typical protection circuit v in v l v v in v in (transient) v l t d v v l v in (transient) z in load overshoot due to inductive effects t d = time delay due to capacitive effect t t figure 6. figure 7.
1n5908 http://onsemi.com 82 clipper bidirectional devices 1. clipper-bidirectional devices are available in the 1.5kexxa series and are designated with a acao suffix; for example, 1.5ke18ca. contact your nearest on semiconductor representative. 2. clipper-bidirectional part numbers are tested in both directions to electrical parameters in preceeding table (except for v f which does not apply). 3. the 1n6267a through 1n6303a series are jedec registered devices and the registration does not include a acao suffix. to order clipper-bidirectional devices one must add ca to the 1.5ke device title.
? semiconductor components industries, llc, 2001 may, 2001 rev. 0 83 publication order number: 1n6373/d 1n6373 - 1n6381 series (icte-5 - icte-36, mpte-5 - mpte-45) 1500 watt peak power mosorb ? zener transient voltage suppressors unidirectional* mosorb devices are designed to protect voltage sensitive components from high voltage, highenergy transients. they have excellent clamping capability, high surge capability, low zener impedance and fast response time. these devices are on semiconductor's exclusive, cost-effective, highly reliable surmetic ? axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect cmos, mos and bipolar integrated circuits. specification features: ? working peak reverse voltage range 5 v to 45 v ? peak power 1500 watts @ 1 ms ? esd rating of class 3 (>16 kv) per human body model ? maximum clamp voltage @ peak pulse current ? low leakage < 5 m a above 10 v ? response time is typically < 1 ns mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 230 c, 1/16 from the case for 10 seconds polarity: cathode indicated by polarity band mounting position: any maximum ratings rating symbol value unit peak power dissipation (note 1.) @ t l 25 c p pk 1500 watts steady state power dissipation @ t l 75 c, lead length = 3/8 derated above t l = 75 c p d 5.0 20 watts mw/ c thermal resistance, junctiontolead r jl 20 c/w forward surge current (note 2.) @ t a = 25 c i fsm 200 amps operating and storage temperature range t j , t stg 65 to +175 c *please see 1n6382 1n6389 (icte10c icte36c, mpte8c mpte45c) for bidirectional devices axial lead case 41a plastic http://onsemi.com l = assembly location mptexx = on device code ictexx = on device code 1n63xx = jedec device code yy = year ww = work week cathode anode device package shipping ordering information mptexx axial lead 500 units/box mptexxrl4 axial lead 1500/tape & reel ictexx axial lead 500 units/box ictexxrl4 axial lead 1500/tape & reel notes: l icte xx yyww 1n63xx axial lead 500 units/box 1n63xxrl4 axial lead 1500/tape & reel l mpte xx 1n 63xx yyww 1. nonrepetitive current pulse per figure 5 and der- ated above t a = 25 c per figure 2. 2. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, duty cycle = 4 pulses per minute maxi- mum.
unidirectional tvs i pp i f v i i r i t v rwm v c v br v f 1n6373 1n6381 series (icte5 icte36, mpte5 mpte45) http://onsemi.com 84 electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max. @ i f (note 3.) = 100 a) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current v br maximum temperature variation of v br i f forward current v f forward voltage @ i f electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max. @ i f (note 3.) = 100 a) v rwm i r @ breakdown voltage v c @ i pp (note 6.) v c (volts) (note 6.) jedec device device v rwm (note 4.) i r @ v rwm v br (note 5. ) (volts) @ i t v c i pp @i pp = @i pp = v br d ev i ce (on device) d ev i ce marking (volts) ( m a) min nom max (ma) (volts) (a) @ i pp = 1 a @ i pp = 10 a (mv/ c) 1n6373 (mpte5) 1n6373 mpte5 5.0 300 6.0 1.0 9.4 160 7.1 7.5 4.0 1n6374 (mpte8) 1n6374 mpte8 8.0 25 9.4 1.0 15 100 11.3 11.5 8.0 1n6375 (mpte10) 1n6375 mpte10 10 2.0 11.7 1.0 16.7 90 13.7 14.1 12 1n6376 (mpte12) 1n6376 mpte12 12 2.0 14.1 1.0 21.2 70 16.1 16.5 14 1n6377 (mpte15) 1n6377 mpte15 15 2.0 17.6 1.0 25 60 20.1 20.6 18 1n6378 (mpte18) 1n6378 mpte18 18 2.0 21.2 1.0 30 50 24.2 25.2 21 1n6379 (mpte22) 1n6379 mpte22 22 2.0 25.9 1.0 37.5 40 29.8 32 26 1n6380 (mpte36) 1n6380 mpte36 36 2.0 42.4 1.0 65.2 23 50.6 54.3 50 1n6381 (mpte45) 1n6381 mpte45 45 2.0 52.9 1.0 78.9 19 63.3 70 60 icte5 icte5 5.0 300 6.0 1.0 9.4 160 7.1 7.5 4.0 icte10 icte10 10 2.0 11.7 1.0 16.7 90 13.7 14.1 8.0 icte12 icte12 12 2.0 14.1 1.0 21.2 70 16.1 16.5 12 icte15 icte15 15 2.0 17.6 1.0 25 60 20.1 20.6 14 icte18 icte18 18 2.0 21.2 1.0 30 50 24.2 25.2 18 icte22 icte22 22 2.0 25.9 1.0 37.5 40 29.8 32 21 icte36 icte36 36 2.0 42.4 1.0 65.2 23 50.6 54.3 26 notes: 3. square waveform, pw = 8.3 ms, nonrepetitive duty cycle. 4. a transient suppressor is normally selected according to the maximum working peak reverse voltage (v rwm ), which should be equal to or greater than the dc or continuous peak operating voltage level. 5. v br measured at pulse test current i t at an ambient temperature of 25 c and minimum voltage in v br is to be controlled. 6. surge current waveform per figure 5 and derate per figures 1 and 2.
1n6373 1n6381 series (icte5 icte36, mpte5 mpte45) http://onsemi.com 85 figure 1. pulse rating curve 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 peak pulse derating in % of peak power or current @ t a = 25 c t a , ambient temperature ( c) figure 2. pulse derating curve 5 4 3 2 1 25 50 75 100 125 150 175 200 p d , steady state power dissipation (watts) t l , lead temperature ( c) 3/8 3/8 0 0 100 50 0 01 2 3 4 t, time (ms) , value (%) t r 10 s t p peak value - i pp half value - i pp 2 pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . 1 m s 10 m s 100 m s 1 ms 10 ms 100 10 1 t p , pulse width p pk , peak power (kw) nonrepetitive pulse waveform shown in figure 5 0.1 m s i pp figure 3. capacitance versus breakdown voltage figure 4. steady state power derating figure 5. pulse waveform 1n6373, icte-5, mpte-5, through 1n6389, icte-45, c, mpte-45, c v br , breakdown voltage (volts) 1 10 100 1000 10,000 1000 100 10 c, capacitance (pf) measured @ zero bias measured @ v rwm
1n6373 1n6381 series (icte5 icte36, mpte5 mpte45) http://onsemi.com 86 1n6373, icte-5, mpte-5, through 1n6389, icte-45, c, mpte-45, c 1.5ke6.8ca through 1.5ke200ca figure 6. dynamic impedance 1000 500 200 100 50 20 10 5 2 1 1000 500 200 100 50 20 10 5 2 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 d v br , instantaneous increase in v br above v br(nom) (volts) 0.3 0.5 0.7 1 2 3 5 7 10 20 30 d v br , instantaneous increase in v br above v br(nom) (volts) i t , test current (amps) v br(min) =6.0 to 11.7v t l =25 c t p =10 m s v br(nom) =6.8 to 13v 20v 24v 43v 75v 180v 120v 19v 21.2v 42.4v figure 7. typical derating factor for duty cycle derating factor 1 ms 10 m s 1 0.7 0.5 0.3 0.05 0.1 0.2 0.01 0.02 0.03 0.07 100 m s 0.1 0.2 0.5 2 5 10 50 1 20 100 d, duty cycle (%) pulse width 10 ms t l =25 c t p =10 m s i t , test current (amps)
1n6373 1n6381 series (icte5 icte36, mpte5 mpte45) http://onsemi.com 87 application notes response time in most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. in this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. the capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in figure 8. the inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. this inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in figure 9. minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. these devices have excellent response time, typically in the picosecond range and negligible inductance. however, external inductive effects could produce unacceptable overshoot. proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. some input impedance represented by z in is essential to prevent overstress of the protection device. this impedance should be as high as possible, without restricting the circuit operation. duty cycle derating the data of figure 1 applies for non-repetitive conditions and at a lead temperature of 25 c. if the duty cycle increases, the peak power must be reduced as indicated by the curves of figure 7. average power must be derated as the lead or ambient temperature rises above 25 c. the average power derating curve normally given on data sheets may be normalized and used for this purpose. at first glance the derating curves of figure 7 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 m s pulse. however, when the derating factor for a given pulse of figure 7 is multiplied by the peak power value of figure 1 for the same pulse, the results follow the expected trend. typical protection circuit v in v l v v in v in (transient) v l t d v v l v in (transient) z in load overshoot due to inductive effects t d = time delay due to capacitive effect t t figure 8. figure 9.
? semiconductor components industries, llc, 2001 may, 2001 rev. 0 88 publication order number: 1n6382/d 1n6382 - 1n6389 series (icte-10c - icte-36c, mpte-8c - mpte-45c) 1500 watt peak power mosorb ? zener transient voltage suppressors bidirectional* mosorb devices are designed to protect voltage sensitive components from high voltage, highenergy transients. they have excellent clamping capability, high surge capability, low zener impedance and fast response time. these devices are on semiconductor's exclusive, cost-effective, highly reliable surmetic ? axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect cmos, mos and bipolar integrated circuits. specification features: ? working peak reverse voltage range 8 v to 45 v ? peak power 1500 watts @ 1 ms ? esd rating of class 3 (>16 kv) per human body model ? maximum clamp voltage @ peak pulse current ? low leakage < 5 m a above 10 v ? response time is typically < 1 ns mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 230 c, 1/16 from the case for 10 seconds polarity: cathode band does not imply polarity mounting position: any maximum ratings rating symbol value unit peak power dissipation (note 1.) @ t l 25 c p pk 1500 watts steady state power dissipation @ t l 75 c, lead length = 3/8 derated above t l = 75 c p d 5.0 20 watts mw/ c thermal resistance, junctiontolead r jl 20 c/w operating and storage temperature range t j , t stg 65 to +175 c 1. nonrepetitive current pulse per figure 4 and derated above t a = 25 c per figure 2. *please see 1n6373 1n6381 (icte5 icte36, mpte5 mpte45) for unidirectional devices axial lead case 41a plastic http://onsemi.com l = assembly location mptexxc = on device code ictexxc = on device code 1n63xx = jedec device code yy = year ww = work week device package shipping ordering information mptexxc axial lead 500 units/box mptexxcrl4 axial lead 1500/tape & reel ictexxc axial lead 500 units/box ictexxcrl4 axial lead 1500/tape & reel l icte xxc yyww 1n63xx axial lead 500 units/box 1n63xxrl4 axial lead 1500/tape & reel l mpte xxc 1n 63xx yyww
bidirectional tvs i pp i pp v i i r i t i t i r v rwm v c v br v rwm v c v br 1n6382 1n6389 series (icte10c icte36c, mpte8c mpte45c) http://onsemi.com 89 electrical characteristics (t a = 25 c unless otherwise noted) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current v br maximum temperature variation of v br electrical characteristics (t a = 25 c unless otherwise noted) v rwm i r @ breakdown voltage v c @ i pp (note 4.) v c (volts) (note 4.) jedec device device v rwm (note 2.) i r @ v rwm v br (note 3.) (volts) @ i t v c i pp @i pp @i pp v br d ev i ce (on device) d ev i ce marking (volts) ( m a) min nom max (ma) (volts) (a) @ i pp = 1 a @ i pp = 10 a (mv/ c) 1n6382 (mpte8c) 1n6382 mpte8c 8.0 25 9.4 1.0 15 100 11.3 11.5 8.0 1n6383 (mpte10c) 1n6383 mpte10c 10 2.0 11.7 1.0 16.7 90 13.7 14.1 12 1n6384 (mpte12c) 1n6384 mpte12c 12 2.0 14.1 1.0 21.2 70 16.1 16.5 14 1n6385 (mpte15c) 1n6385 mpte15c 15 2.0 17.6 1.0 25 60 20.1 20.6 18 1n6386 (mpte18c) 1n6386 mpte18c 18 2.0 21.2 1.0 30 50 24.2 25.2 21 1n6387 (mpte22c) 1n6387 mpte22c 22 2.0 25.9 1.0 37.5 40 29.8 32 26 1n6388 (mpte36c) 1n6388 mpte36c 36 2.0 42.4 1.0 65.2 23 50.6 54.3 50 1n6389 (mpte45c) 1n6389 mpte45c 45 2.0 52.9 1.0 78.9 19 63.3 70 60 icte10c icte10c 10 2.0 11.7 1.0 16.7 90 13.7 14.1 8.0 icte12c icte12c 12 2.0 14.1 1.0 21.2 70 16.1 16.5 12 icte15c icte15c 15 2.0 17.6 1.0 25 60 20.1 20.6 14 icte18c icte18c 18 2.0 21.2 1.0 30 50 24.2 25.2 18 icte22c icte22c 22 2.0 25.9 1.0 37.5 40 29.8 32 21 icte36c icte36c 36 2.0 42.4 1.0 65.2 23 50.6 54.3 26 notes: 2. a transient suppressor is normally selected according to the maximum working peak reverse voltage (v rwm ), which should be equal to or greater than the dc or continuous peak operating voltage level. 3. v br measured at pulse test current i t at an ambient temperature of 25 c and minimum voltage in v br is to be controlled. 4. surge current waveform per figure 4 and derate per figures 1 and 2.
1n6382 1n6389 series (icte10c icte36c, mpte8c mpte45c) http://onsemi.com 90 figure 1. pulse rating curve 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 peak pulse derating in % of peak power or current @ t a = 25 c t a , ambient temperature ( c) figure 2. pulse derating curve 5 4 3 2 1 25 50 75 100 125 150 175 200 p d , steady state power dissipation (watts) t l , lead temperature ( c) 3/8 3/8 0 0 100 50 0 01 2 3 4 t, time (ms) , value (%) t r 10 s t p peak value - i pp half value - i pp 2 pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . 1 m s 10 m s 100 m s 1 ms 10 ms 100 10 1 t p , pulse width p pk , peak power (kw) nonrepetitive pulse waveform shown in figure 5 0.1 m s i pp figure 3. steady state power derating figure 4. pulse waveform
1n6382 1n6389 series (icte10c icte36c, mpte8c mpte45c) http://onsemi.com 91 1n6373, icte-5, mpte-5, through 1n6389, icte-45, c, mpte-45, c 1.5ke6.8ca through 1.5ke200ca figure 5. dynamic impedance 1000 500 200 100 50 20 10 5 2 1 1000 500 200 100 50 20 10 5 2 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 d v br , instantaneous increase in v br above v br(nom) (volts) 0.3 0.5 0.7 1 2 3 5 7 10 20 30 d v br , instantaneous increase in v br above v br(nom) (volts) i t , test current (amps) v br(min) =6.0 to 11.7v t l =25 c t p =10 m s v br(nom) =6.8 to 13v 20v 24v 43v 75v 180v 120v 19v 21.2v 42.4v figure 6. typical derating factor for duty cycle derating factor 1 ms 10 m s 1 0.7 0.5 0.3 0.05 0.1 0.2 0.01 0.02 0.03 0.07 100 m s 0.1 0.2 0.5 2 5 10 50 1 20 100 d, duty cycle (%) pulse width 10 ms t l =25 c t p =10 m s i t , test current (amps)
1n6382 1n6389 series (icte10c icte36c, mpte8c mpte45c) http://onsemi.com 92 application notes response time in most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. in this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. the capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in figure 7. the inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. this inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in figure 8. minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. these devices have excellent response time, typically in the picosecond range and negligible inductance. however, external inductive effects could produce unacceptable overshoot. proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. some input impedance represented by z in is essential to prevent overstress of the protection device. this impedance should be as high as possible, without restricting the circuit operation. duty cycle derating the data of figure 1 applies for non-repetitive conditions and at a lead temperature of 25 c. if the duty cycle increases, the peak power must be reduced as indicated by the curves of figure 6. average power must be derated as the lead or ambient temperature rises above 25 c. the average power derating curve normally given on data sheets may be normalized and used for this purpose. at first glance the derating curves of figure 6 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 m s pulse. however, when the derating factor for a given pulse of figure 6 is multiplied by the peak power value of figure 1 for the same pulse, the results follow the expected trend. typical protection circuit v in v l v v in v in (transient) v l t d v v l v in (transient) z in load overshoot due to inductive effects t d = time delay due to capacitive effect t t figure 7. figure 8.
http://onsemi.com 93 chapter 4 transient voltage suppressors surface mounted data sheets
? semiconductor components industries, llc, 2001 may, 2001 rev. 4 94 publication order number: 1pmt5.0at3/d 1pmt5.0at3 series zener transient voltage suppressor powermite ? package the 1pmt5.0at3 series is designed to protect voltage sensitive components from high voltage, high energy transients. excellent clamping capability, high surge capability, low zener impedance and fast response time. the advanced packaging technique provides for a highly efficient micro miniature, space saving surface mount with its unique heat sink design. the powermite has the same thermal performance as the sma while being 50% smaller in footprint area, and delivering one of the lowest height profiles (1.1 mm) in the industry. because of its small size, it is ideal for use in cellular phones, portable devices, business machines, power supplies and many other industrial/consumer applications. specification features: ? standoff voltage: 5 58 volts ? peak power 175 watts @ 1 ms ? maximum clamp voltage @ peak pulse current ? low leakage ? response time is typically < 1 ns ? esd rating of class 3 (> 16 kv) per human body model ? low profile maximum height of 1.1 mm ? integral heat sink/locking tabs ? full metallic bottom eliminates flux entrapment ? small footprint footprint area of 8.45 mm 2 ? supplied in 12 mm tape and reel 12,000 units per reel ? powermite is jedec registered as do216aa ? cathode indicated by polarity band mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable mounting position: any maximum case temperature for soldering purposes: 260 c for 10 seconds plastic surface mount zener overvoltage transient suppressor 5 58 volts 175 watt peak power device package shipping ordering information 1pmtxxat3 powermite 12,000/tape & reel powermite case 457 plastic http://onsemi.com 12 1: cathode 2: anode 1 2 lead orientation in tape: cathode (short) lead to sprocket holes mxx = specific device code xx = 5 58 = (see table next page) d = date code marking diagram mxx d 1 cathode 2 anode
unidirectional tvs i pp i f v i i r i t v rwm v c v br v f 1pmt5.0at3 series http://onsemi.com 95 maximum ratings rating symbol value unit maximum p pk dissipation @ t a = 25 c, (pw10/1000 s) (note 1.) p pk 175 w maximum p pk dissipation @ t a = 25 c, (pw8/20 s) (note 1.) p pk 1000 w dc power dissipation @ t a = 25 c (note 2.) derate above 25 c thermal resistance from junction to ambient p d r q ja 500 4.0 248 mw mw/ c c/w thermal resistance from junction to lead (anode) r q janode 35 c/w maximum dc power dissipation (note 3.) thermal resistance from junction to tab (cathode) p d r q jcathode 3.2 23 w c/w operating and storage temperature range t j , t stg 55 to +150 c 1. nonrepetitive current pulse at t a = 25 c. 2. mounted with recommended minimum pad size, dc board fr4. 3. at tab (cathode) temperature, t tab = 75 c electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max. @ i f (note 4.) = 35 a) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current i f forward current v f forward voltage @ i f electrical characteristics (t l = 30 c unless otherwise noted, v f = 1.25 volts @ 200 ma) v rwm v br @ i t (v) (note 6.) i t i r @ v rwm v c @ i pp i pp (a) device marking (note 5.) min nom max (ma) ( a) (v) (note 7.) 1pmt5.0at3 mke 5.0 6.4 6.7 7.0 10 800 9.2 19 1pmt7.0at3 mkm 7.0 7.78 8.2 8.6 10 500 12 14.6 1pmt12at3 mle 12 13.3 14.0 14.7 1.0 5.0 19.9 8.8 1pmt16at3 mlp 16 17.8 18.75 19.7 1.0 5.0 26 7.0 1pmt18at3 mlt 18 20.0 21.0 22.1 1.0 5.0 29.2 6.0 1pmt22at3 mlx 22 24.4 25.6 26.9 1.0 5.0 35.5 4.9 1pmt24at3 mlz 24 26.7 28.1 29.5 1.0 5.0 38.9 4.5 1pmt26at3 mme 26 28.9 30.4 31.9 1.0 5.0 42.1 4.2 1pmt28at3 mmg 28 31.1 32.8 34.4 1.0 5.0 45.4 3.9 1pmt30at3 mmk 30 33.3 35.1 36.8 1.0 5.0 48.4 3.6 1pmt33at3 mmm 33 36.7 38.7 40.6 1.0 5.0 53.3 3.3 1pmt36at3 mmp 36 40.0 42.1 44.2 1.0 5.0 58.1 3.0 1pmt40at3 mmr 40 44.4 46.8 49.1 1.0 5.0 64.5 2.7 1pmt48at3 mmx 48 53.3 56.1 58.9 1.0 5.0 77.4 2.3 1pmt51at3 mmz 51 56.7 59.7 62.7 1.0 5.0 82.4 2.1 1pmt58at3 mng 58 64.4 67.8 71.2 1.0 5.0 93.6 1.9 4. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, duty cycle = 4 pulses per minute maximum. 5. a transient suppressor is normally selected according to the working peak reverse voltage (v rwm ) which should be equal to or greater than the dc or continuous peak operating voltage level. 6. v br measured at pulse test current i t at ambient temperature of 25 c. 7. surge current waveform per figure 2 and derate per figure 4.
1pmt5.0at3 series http://onsemi.com 96 p , peak power (watts) p t p , pulse width ( s) 100 1000 10,000 1.0 10 100 10 01234 0 50 100 t, time (ms) value (%) half value - i rsm 2 peak value - i rsm t r t r 10 m s typical protection circuit v in v l z in load peak pulse derating in % of peak power or current @ t a = 25 c 100 80 60 40 20 0 0 25 50 75 100 125 150 t a , ambient temperature ( c) 120 140 160 t p pulse width (t p ) is defined as that point where the peak current decays to 50% of i rsm . figure 1. pulse rating curve figure 2. 10 x 1000 s pulse waveform 100 90 80 70 60 50 40 30 20 10 0 020406080 t, time ( s) % of peak pulse current t p t r pulse width (t p ) is defined as that point where the peak current decay = 8 s peak value i rsm @ 8 s half value i rsm /2 @ 20 s figure 3. 8 x 20 s pulse waveform 1000 10,000 figure 4. pulse derating curve
1pmt5.0at3 series http://onsemi.com 97 figure 5. typical derating factor for duty cycle derating factor 1 ms 10 m s 1 0.7 0.5 0.3 0.05 0.1 0.2 0.01 0.02 0.03 0.07 100 m s 0.1 0.2 0.5 2 5 10 50 1 20 100 d, duty cycle (%) pulse width 10 ms figure 6. steady state power derating 1.2 1.0 0.8 0.6 0.4 0.2 0 55 25 85 150 t, temperature ( c) v , typical forward voltage (volts) f figure 7. forward voltage 25 50 75 100 125 175 3.5 2.5 2 1.5 1 0 t, temperature ( c) p , maximum power dissipation (w) d 0.5 t l 150 3 10,000 1000 100 10 1 10 100 working peak reverse voltage (volts) c, capacitance (pf) figure 8. capacitance versus working peak reverse voltage measured @ 50% v rwm measured @ zero bias
? semiconductor components industries, llc, 2001 may, 2001 rev. 4 98 publication order number: 1sma5.0at3/d 1sma5.0at3 series 400 watt peak power zener transient voltage suppressors unidirectional* the sma series is designed to protect voltage sensitive components from high voltage, high energy transients. they have excellent clamping capability, high surge capability, low zener impedance and fast response time. the sma series is supplied in on semiconductor's exclusive, cost-effective, highly reliable surmetic package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. specification features: ? working peak reverse voltage range 5.0 v to 78 v ? standard zener breakdown voltage range 6.7 v to 91.25 v ? peak power 400 watts @ 1 ms ? esd rating of class 3 (> 16 kv) per human body model ? response time is typically < 1 ns ? flat handling surface for accurate placement ? package design for top slide or bottom circuit board mounting ? low profile package mechanical characteristics: case: void-free, transfer-molded plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds polarity: cathode indicated by molded polarity notch or polarity band mounting position: any maximum ratings please see the table on the following page plastic surface mount zener overvoltage transient suppressors 5.078 volts 400 watts peak power device package shipping ordering information 1smaxxat3 sma 5000/tape & reel sma case 403b plastic http://onsemi.com xx = specific device code = (see table on page 100) ll = assembly location y = year ww = work week xx llyww marking diagram *please see 1sma10cat3 to 1sma78cat3 for bidirectional devices. 2the at3o suffix refers to a 13 inch reel. cathode anode
unidirectional tvs i pp i f v i i r i t v rwm v c v br v f 1sma5.0at3 series http://onsemi.com 99 maximum ratings rating symbol value unit peak power dissipation (note 1.) @ t l = 25 c, pulse width = 1 ms p pk 400 w dc power dissipation @ t l = 75 c measured zero lead length (note 2.) derate above 75 c thermal resistance from junction to lead p d r jl 1.5 20 50 w mw/ c c/w dc power dissipation (note 3.) @ t a = 25 c derate above 25 c thermal resistance from junction to ambient p d r ja 0.5 4.0 250 w mw/ c c/w forward surge current (note 4.) @ t a = 25 c i fsm 40 a operating and storage temperature range t j , t stg 65 to +150 c 1. 10 x 1000 s, nonrepetitive 2. 1 square copper pad, fr4 board 3. fr4 board, using on semiconductor minimum recommended footprint, as shown in 403b case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, duty cycle = 4 pulses per minute maximum. electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max. @ i f = 30 a for all types) (note 5.) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current i f forward current v f forward voltage @ i f 5. 1/2 sine wave or equivalent, pw = 8.3 ms, nonrepetitive duty cycle.
1sma5.0at3 series http://onsemi.com 100 electrical characteristics v rwm breakdown voltage v c @ i pp (note 8.) device v rwm (note 6.) i r @ v rwm v br (volts) (note 7.) @ i t v c i pp device d ev i ce marking volts m a min nom max ma volts amps 1sma5.0at3 qe 5.0 400 6.4 6.7 7.0 10 9.2 43.5 1sma6.0at3 qg 6.0 400 6.67 7.02 7.37 10 10.3 38.8 1sma6.5at3 qk 6.5 250 7.22 7.6 7.98 10 11.2 35.7 1sma7.0at3 qm 7.0 250 7.78 8.19 8.6 10 12.0 33.3 1sma7.5at3 qp 7.5 50 8.33 8.77 9.21 1 12.9 31.0 1sma8.0at3 qr 8.0 25 8.89 9.36 9.83 1 13.6 29.4 1sma8.5at3 qt 8.5 5.0 9.44 9.92 10.4 1 14.4 27.8 1sma9.0at3 qv 9.0 2.5 10 10.55 11.1 1 15.4 26.0 1sma10at3 qx 10 2.5 11.1 11.7 12.3 1 17.0 23.5 1sma11at3 qz 11 2.5 12.2 12.85 13.5 1 18.2 22.0 1sma12at3 re 12 2.5 13.3 14.0 14.7 1 19.9 20.1 1sma13at3 rg 13 2.5 14.4 15.15 15.9 1 21.5 18.6 1sma14at3 rk 14 2.5 15.6 16.4 17.2 1 23.2 17.2 1sma15at3 rm 15 2.5 16.7 17.6 18.5 1 24.4 16.4 1sma16at3 rp 16 2.5 17.8 18.75 19.7 1 26.0 15.4 1sma17at3 rr 17 2.5 18.9 19.9 20.9 1 27.6 14.5 1sma18at3 rt 18 2.5 20 21.05 22.1 1 29.2 13.7 1sma20at3 rv 20 2.5 22.2 23.35 24.5 1 32.4 12.3 1sma22at3 rx 22 2.5 24.4 25.65 26.9 1 35.5 11.3 1sma24at3 rz 24 2.5 26.7 28.1 29.5 1 38.9 10.3 1sma26at3 se 26 2.5 28.9 30.4 31.9 1 42.1 9.5 1sma28at3 sg 28 2.5 31.1 32.75 34.4 1 45.4 8.8 1sma30at3 sk 30 2.5 33.3 35.05 36.8 1 48.4 8.3 1sma33at3 sm 33 2.5 36.7 38.65 40.6 1 53.3 7.5 1sma36at3 sp 36 2.5 40 42.1 44.2 1 58.1 6.9 1sma40at3 sr 40 2.5 44.4 46.75 49.1 1 64.5 6.2 1sma43at3 st 43 2.5 47.8 50.3 52.8 1 69.4 5.8 1sma45at3 sv 45 2.5 50 52.65 55.3 1 72.2 5.5 1sma48at3 sx 48 2.5 53.3 56.1 58.9 1 77.4 5.2 1sma51at3 sz 51 2.5 56.7 59.7 62.7 1 82.4 4.9 1sma54at3 te 54 2.5 60 63.15 66.3 1 87.1 4.6 1sma58at3 tg 58 2.5 64.4 67.8 71.5 1 93.6 4.3 1sma60at3 tk 60 2.5 66.7 70.2 73.7 1 96.8 4.1 1sma64at3 tm 64 2.5 71.1 74.85 78.6 1 103 3.9 1sma70at3 tp 70 2.5 77.8 81.9 86.0 1 113 3.5 1sma75at3 tr 75 2.5 83.3 87.7 92.1 1 121 3.3 1sma78at3 ts 78 2.5 86.7 91.25 95.8 1 126 3.2 6. a transient suppressor is normally selected according to the working peak reverse voltage (v rwm ), which should be equal to or greater than the dc or continuous peak operating voltage level 7. v br measured at pulse test current i t at an ambient temperature of 25 c 8. surge current waveform per figure 2 and derate per figure 3
1sma5.0at3 series http://onsemi.com 101 rating and typical characteristic curves t a = 25 c pw (i d ) is defined as the point where the peak current decays to 50% of i pp . 10 m s peak value i ppm half value - i pp /2 10/1000 m s waveform as defined by r.e.a. t d 120 100 80 60 40 0 01 2 3 4 i ppm , peak pulse current (%) 20 5 10 -4 100 0.1 1 10 10 1 0.1 t p , pulse width (ms) p pk nonrepetitive pulse waveform shown in figure 2. t a = 25 c , peak power (kw) 0.01 0.001 t, time (ms) 120 100 80 60 40 0 0 40 80 120 160 t a , ambient temperature ( c) peak pulse derating in % of 20 200 peak power or current 10 x 1000 waveform as defined by r.e.a. 10,000 1,000 100 10 1 2 5 10 20 50 100 200 v (br) , breakdown voltage (volts) measured at zero bias measured at stand-off voltage, v wm t j = 25 c f = 1 mhz v sig = 50 mv p-p 0 6 t, temperature ( c) 50 100 150 p d , maximum power dissipation (watts) 5 4 3 2 0 1 figure 1. pulse rating curve figure 2. pulse waveform figure 3. pulse derating curve figure 4. typical junction capacitance figure 5. steady state power derating c, capacitance (pf) @ t l = 75 c p d = 1.5 w @ t a = 25 c p d = 0.5 w 25 75 125
? semiconductor components industries, llc, 2001 may, 2001 rev. 4 102 publication order number: 1sma10cat3/d 1sma10cat3 series 400 watt peak power zener transient voltage suppressors bidirectional* the sma series is designed to protect voltage sensitive components from high voltage, high energy transients. they have excellent clamping capability, high surge capability, low zener impedance and fast response time. the sma series is supplied in on semiconductor's exclusive, cost-effective, highly reliable surmetic package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. specification features: ? working peak reverse voltage range 10 v to 78 v ? standard zener breakdown voltage range 11.7 v to 91.3 v ? peak power 400 watts @ 1 ms ? esd rating of class 3 (> 16 kv) per human body model ? response time is typically < 1 ns ? flat handling surface for accurate placement ? package design for top slide or bottom circuit board mounting ? low profile package mechanical characteristics: case: void-free, transfer-molded plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds polarity: cathode polarity notch does not indicate polarity mounting position: any maximum ratings rating symbol value unit peak power dissipation (note 1.) @ t l = 25 c, pulse width = 1 ms p pk 400 w dc power dissipation @ t l = 75 c measured zero lead length (note 2.) derate above 75 c thermal resistance from junction to lead p d r jl 1.5 20 50 w mw/ c c/w dc power dissipation (note 3.) @ t a = 25 c derate above 25 c thermal resistance from junction to ambient p d r ja 0.5 4.0 250 w mw/ c c/w operating and storage temperature range t j , t stg 65 to +150 c 1. 10 x 1000 s, nonrepetitive 2. 1 square copper pad, fr4 board 3. fr4 board, using on semiconductor minimum recommended footprint, as shown in 403b case outline dimensions spec. *please see 1sma5.0at3 to 1sma78at3 for unidirectional devices. plastic surface mount zener overvoltage transient suppressors 1078 volts v r 400 watts peak power device package shipping ordering information 1smaxxcat3 sma 5000/tape & reel sma case 403b plastic http://onsemi.com xxc = specific device code = (see table next page) ll = assembly location y = year ww = work week xxc llyww marking diagram 2the at3o suffix refers to a 13 inch reel.
bidirectional tvs i pp i pp v i i r i t i t i r v rwm v c v br v rwm v c v br 1sma10cat3 series http://onsemi.com 103 electrical characteristics (t a = 25 c unless otherwise noted) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current electrical characteristics v rwm breakdown voltage v c @ i pp (note 6.) device v rwm (note 4.) i r @ v rwm v br (volts) (note 5.) @ i t v c i pp device d ev i ce marking volts m a min nom max ma volts amps 1sma10cat3 qxc 10 2.5 11.1 11.69 12.27 1.0 17.0 23.5 1sma11cat3 qzc 11 2.5 12.2 12.84 13.48 1.0 18.2 22.0 1sma12cat3 rec 12 2.5 13.3 14.00 14.70 1.0 19.9 20.1 1sma13cat3 rgc 13 2.5 14.4 15.16 15.92 1.0 21.5 18.6 1sma14cat3 rkc 14 2.5 15.6 16.42 17.24 1.0 23.2 17.2 1sma15cat3 rmc 15 2.5 16.7 17.58 18.46 1.0 24.4 16.4 1sma16cat3 rpc 16 2.5 17.8 18.74 19.67 1.0 26.0 15.4 1sma17cat3 rrc 17 2.5 18.9 19.90 20.89 1.0 27.6 14.5 1sma18cat3 rtc 18 2.5 20 21.06 22.11 1.0 29.2 13.7 1sma20cat3 rvc 20 2.5 22.2 23.37 24.54 1.0 32.4 12.3 1sma22cat3 rxc 22 2.5 24.4 25.69 26.97 1.0 35.5 11.3 1sma24cat3 rzc 24 2.5 26.7 28.11 29.51 1.0 38.9 10.3 1sma26cat3 sec 26 2.5 28.9 30.42 31.94 1.0 42.1 9.5 1sma28cat3 sgc 28 2.5 31.1 32.74 34.37 1.0 45.4 8.8 1sma30cat3 skc 30 2.5 33.3 35.06 36.81 1.0 48.4 8.3 1sma33cat3 smc 33 2.5 36.7 38.63 40.56 1.0 53.3 7.5 1sma36cat3 spc 36 2.5 40 42.11 44.21 1.0 58.1 6.9 1sma40cat3 src 40 2.5 44.4 46.74 49.07 1.0 64.5 6.2 1sma43cat3 stc 43 2.5 47.8 50.32 52.83 1.0 69.4 5.8 1sma45cat3 svc 45 2.5 50 52.63 55.26 1.0 72.2 5.5 1sma48cat3 sxc 48 2.5 53.3 56.11 58.91 1.0 77.4 5.2 1sma51cat3 szc 51 2.5 56.7 59.69 62.67 1.0 82.4 4.9 1sma54cat3 tec 54 2.5 60 63.16 66.32 1.0 87.1 4.6 1sma58cat3 tgc 58 2.5 64.4 67.79 71.18 1.0 93.6 4.3 1sma60cat3 tkc 60 2.5 66.7 70.21 73.72 1.0 96.8 4.1 1sma64cat3 tmc 64 2.5 71.1 74.84 78.58 1.0 103 3.9 1sma70cat3 tpc 70 2.5 77.8 81.90 85.99 1.0 113 3.5 1sma75cat3 trc 75 2.5 83.3 87.69 92.07 1.0 121 3.3 1sma78cat3 ttc 78 2.5 86.7 91.27 95.83 1.0 126 3.2 4. a transient suppressor is normally selected according to the working peak reverse voltage (v rwm ), which should be equal to or greater than the dc or continuous peak operating voltage level 5. v br measured at pulse test current i t at an ambient temperature of 25 c 6. surge current waveform per figure 2 and derate per figure 3
1sma10cat3 series http://onsemi.com 104 rating and typical characteristic curves t a = 25 c pw (i d ) is defined as the point where the peak current decays to 50% of i pp . = 10 m s peak value i ppm half value - i pp /2 10/1000 m s waveform as defined by r.e.a. t d 120 100 80 60 40 0 01 2 34 20 5 figure 1. pulse rating curve 10 -4 100 0.1 1 10 10 1 0.1 t p , pulse width (ms) p pk nonrepetitive pulse waveform shown in figure 2. t a = 25 c , peak power (kw) 0.01 0.001 figure 2. pulse waveform t, time (ms) i ppm , peak pulse current (%) figure 3. pulse derating curve 120 100 80 60 40 0 0 40 80 120 160 t a , ambient temperature ( c) peak pulse derating in % of 20 200 peak power or current 10 x 1000 waveform as defined by r.e.a.
? semiconductor components industries, llc, 2001 may, 2001 rev. 4 105 publication order number: 1smb5.0at3/d 1smb5.0at3 series 600 watt peak power zener transient voltage suppressors unidirectional* the smb series is designed to protect voltage sensitive components from high voltage, high energy transients. they have excellent clamping capability, high surge capability, low zener impedance and fast response time. the smb series is supplied in on semiconductor's exclusive, cost-effective, highly reliable surmetic ? package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. specification features: ? working peak reverse voltage range 5.0 v to 170 v ? standard zener breakdown voltage range 6.7 v to 199 v ? peak power 600 watts @ 1 ms ? esd rating of class 3 (>16 kv) per human body model ? maximum clamp voltage @ peak pulse current ? low leakage < 5 m a above 10 v ? ul 497b for isolated loop circuit protection ? response time is typically < 1 ns mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds leads: modified lbend providing more contact area to bond pads polarity: cathode indicated by polarity band mounting position: any maximum ratings please see the table on the following page *please see 1smb10cat3 to 1smb78cat3 for bidirectional devices. plastic surface mount zener overvoltage transient suppressors 5.0170 volts 600 watt peak power devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. device package shipping ordering information 1smbxxxat3 smb 2500/tape & reel smb case 403a plastic http://onsemi.com cathode anode y = year ww = work week xx = specific device code = (see table page 107) yww xx marking diagram 2the at3o suffix refers to a 13 inch reel.
unidirectional tvs i pp i f v i i r i t v rwm v c v br v f 1smb5.0at3 series http://onsemi.com 106 maximum ratings rating symbol value unit peak power dissipation (note 1.) @ t l = 25 c, pulse width = 1 ms p pk 600 w dc power dissipation @ t l = 75 c measured zero lead length (note 2.) derate above 75 c thermal resistance from junction to lead p d r jl 3.0 40 25 w mw/ c c/w dc power dissipation (note 3.) @ t a = 25 c derate above 25 c thermal resistance from junction to ambient p d r ja 0.55 4.4 226 w mw/ c c/w forward surge current (note 4.) @ t a = 25 c i fsm 100 a operating and storage temperature range t j , t stg 65 to +150 c 1. 10 x 1000 s, nonrepetitive 2. 1 square copper pad, fr4 board 3. fr4 board, using on semiconductor minimum recommended footprint, as shown in 403a case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, duty cycle = 4 pulses per minute maximum. electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max. @ i f (note 5.) = 30 a) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current i f forward current v f forward voltage @ i f 5. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, nonrepetitive duty cycle.
1smb5.0at3 series http://onsemi.com 107 electrical characteristics (devices listed in bold, italic are on semiconductor preferred devices.) v rwm breakdown voltage v c @ i pp (note 8.) device v rwm (note 6.) i r @ v rwm v br (note 7.) volts @ i t v c i pp device d ev i ce marking volts m a min nom max ma volts amps 1smb5.0at3 1smb6.0at3 1smb6.5at3 1smb7.0at3 ke kg kk km 5.0 6.0 6.5 7.0 800 800 500 500 6.40 6.67 7.22 7.78 6.7 7.02 7.6 8.19 7.0 7.37 7.98 8.6 10 10 10 10 9.2 10.3 11.2 12.0 65.2 58.3 53.6 50.0 1smb7.5at3 1smb8.0at3 1smb8.5at3 1smb9.0at3 kp kr kt kv 7.5 8.0 8.5 9.0 100 50 10 5.0 8.33 8.89 9.44 10.0 8.77 9.36 9.92 10.55 9.21 9.83 10.4 11.1 1.0 1.0 1.0 1.0 12.9 13.6 14.4 15.4 46.5 44.1 41.7 39.0 1smb10at3 1smb11at3 1smb12at3 1smb13at3 kx kz le lg 10 11 12 13 5.0 5.0 5.0 5.0 11.1 12.2 13.3 14.4 11.7 12.85 14 15.15 12.3 13.5 14.7 15.9 1.0 1.0 1.0 1.0 17.0 18.2 19.9 21.5 35.3 33.0 30.2 27.9 1smb14at3 1smb15at3 1smb16at3 1smb17at3 lk lm lp lr 14 15 16 17 5.0 5.0 5.0 5.0 15.6 16.7 17.8 18.9 16.4 17.6 18.75 19.9 17.2 18.5 19.7 20.9 1.0 1.0 1.0 1.0 23.2 24.4 26.0 27.6 25.8 24.0 23.1 21.7 1smb18at3 1smb20at3 1smb22at3 1smb24at3 lt lv lx lz 18 20 22 24 5.0 5.0 5.0 5.0 20.0 22.2 24.4 26.7 21.05 23.35 25.65 28.1 22.1 24.5 26.9 29.5 1.0 1.0 1.0 1.0 29.2 32.4 35.5 38.9 20.5 18.5 16.9 15.4 1smb26at3 1smb28at3 1smb30at3 1smb33at3 me mg mk mm 26 28 30 33 5.0 5.0 5.0 5.0 28.9 31.1 33.3 36.7 30.4 32.75 35.05 38.65 31.9 34.4 36.8 40.6 1.0 1.0 1.0 1.0 42.1 45.4 48.4 53.3 14.2 13.2 12.4 11.3 1smb36at3 1smb40at3 1smb43at3 1smb45at3 mp mr mt mv 36 40 43 45 5.0 5.0 5.0 5.0 40.0 44.4 47.8 50.0 42.1 46.75 50.3 52.65 44.2 49.1 52.8 55.3 1.0 1.0 1.0 1.0 58.1 64.5 69.4 72.7 10.3 9.3 8.6 8.3 1smb48at3 1smb51at3 1smb54at3 1smb58at3 mx mz ne ng 48 51 54 58 5.0 5.0 5.0 5.0 53.3 56.7 60.0 64.4 56.1 59.7 63.15 67.8 58.9 62.7 66.3 71.2 1.0 1.0 1.0 1.0 77.4 82.4 87.1 93.6 7.7 7.3 6.9 6.4 1smb60at3 1smb64at3 1smb70at3 1smb75at3 nk nm np nr 60 64 70 75 5.0 5.0 5.0 5.0 66.7 71.1 77.8 83.3 70.2 74.85 81.9 87.7 73.7 78.6 86 92.1 1.0 1.0 1.0 1.0 96.8 103 113 121 6.2 5.8 5.3 4.9 1smb78at3 1smb85at3 1smb90at3 1smb100at3 nt nv nx nz 78 85 90 100 5.0 5.0 5.0 5.0 86.7 94.4 100 111 91.25 99.2 105.5 117 95.8 104 111 123 1.0 1.0 1.0 1.0 126 137 146 162 4.7 4.4 4.1 3.7 1smb110at3 1smb120at3 1smb130at3 1smb150at3 pe pg pk pm 110 120 130 150 5.0 5.0 5.0 5.0 122 133 144 167 128.5 140 151.5 176 135 147 159 185 1.0 1.0 1.0 1.0 177 193 209 243 3.4 3.1 2.9 2.5 1smb160at3 1smb170at3 pp pr 160 170 5.0 5.0 178 189 187.5 199 197 209 1.0 1.0 259 275 2.3 2.2 6. a transient suppressor is normally selected according to the working peak reverse voltage (v rwm ), which should be equal to or greater than the dc or continuous peak operating voltage level. 7. v br measured at pulse test current i t at an ambient temperature of 25 c. 8. surge current waveform per figure 2 and derate per figure 3 of the general data 600 w at the beginning of this group.
1smb5.0at3 series http://onsemi.com 108 nonrepetitive pulse waveform shown in figure 2 t p , pulse width 1 10 100 0.1 m s1 m s10 m s 100 m s 1 ms 10 ms 0.1 figure 1. pulse rating curve 01234 0 50 100 t, time (ms) value (%) half value - i pp 2 peak value - i pp t r 10 m s figure 2. pulse waveform typical protection circuit v in v l z in load figure 3. pulse derating curve peak pulse derating in % of peak power or current @ t a = 25 c 100 80 60 40 20 0 0 25 50 75 100 125 150 t a , ambient temperature ( c) 120 140 160 t p pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . v br , breakdown voltage (volts) figure 4. capacitance versus breakdown voltage 0.1 1 10 100 1000 10 100 1000 10,000 c, capacitance (pf) measured @ zero bias measured @ v rwm p pk , peak power (kw)
1smb5.0at3 series http://onsemi.com 109 application notes response time in most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. in this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. the capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in figure 5. the inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. this inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in figure 6. minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. the smb series have a very good response time, typically < 1 ns and negligible inductance. however, external inductive effects could produce unacceptable overshoot. proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. some input impedance represented by z in is essential to prevent overstress of the protection device. this impedance should be as high as possible, without restricting the circuit operation. duty cycle derating the data of figure 1 applies for non-repetitive conditions and at a lead temperature of 25 c. if the duty cycle increases, the peak power must be reduced as indicated by the curves of figure 7. average power must be derated as the lead or ambient temperature rises above 25 c. the average power derating curve normally given on data sheets may be normalized and used for this purpose. at first glance the derating curves of figure 7 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 m s pulse. however, when the derating factor for a given pulse of figure 7 is multiplied by the peak power value of figure 1 for the same pulse, the results follow the expected trend.
1smb5.0at3 series http://onsemi.com 110 v l v v in v in (transient) v l t d v v in (transient) overshoot due to inductive effects t d = time delay due to capacitive effect t t figure 5. figure 6. figure 7. typical derating factor for duty cycle derating factor 1 ms 10 m s 1 0.7 0.5 0.3 0.05 0.1 0.2 0.01 0.02 0.03 0.07 100 m s 0.1 0.2 0.5 2 5 10 50 1 20 100 d, duty cycle (%) pulse width 10 ms ul recognition the entire series has underwriters laboratory recognition for the classification of protectors (qvgv2) under the ul standard for safety 497b and file #116110. many competitors only have one or two devices recognized or have recognition in a non-protective category. some competitors have no recognition at all. with the ul497b recognition, our parts successfully passed several tests including strike voltage breakdown test, endurance conditioning, temperature test, dielectric voltage-withstand test, discharge test and several more. whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their protector category.
? semiconductor components industries, llc, 2001 may, 2001 rev. 5 111 publication order number: p6smb6.8at3/d p6smb6.8at3 series 600 watt peak power zener transient voltage suppressors unidirectional* the smb series is designed to protect voltage sensitive components from high voltage, high energy transients. they have excellent clamping capability, high surge capability, low zener impedance and fast response time. the smb series is supplied in on semiconductor's exclusive, cost-effective, highly reliable surmetic ? package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. specification features: ? working peak reverse voltage range 5.8 to 171 v ? standard zener breakdown voltage range 6.8 to 200 v ? peak power 600 watts @ 1 ms ? esd rating of class 3 (>16 kv) per human body model ? maximum clamp voltage @ peak pulse current ? low leakage < 5 m a above 10 v ? ul 497b for isolated loop circuit protection ? response time is typically < 1 ns mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds leads: modified lbend providing more contact area to bond pads polarity: cathode indicated by polarity band mounting position: any maximum ratings please see the table on the following page *please see p6smb11cat3 to p6smb91cat3 for bidirectional devices. plastic surface mount zener overvoltage transient suppressors 5.8171 volts 600 watt peak power devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. device package shipping ordering information p6smbxxxat3 smb 2500/tape & reel smb case 403a plastic http://onsemi.com cathode anode y = year ww = work week xxxa = specific device code = (see table on page 113) yww xxxa marking diagram 2the at3o suffix refers to a 13 inch reel.
unidirectional tvs i pp i f v i i r i t v rwm v c v br v f p6smb6.8at3 series http://onsemi.com 112 maximum ratings rating symbol value unit peak power dissipation (note 1.) @ t l = 25 c, pulse width = 1 ms p pk 600 w dc power dissipation @ t l = 75 c measured zero lead length (note 2.) derate above 75 c thermal resistance from junction to lead p d r jl 3.0 40 25 w mw/ c c/w dc power dissipation (note 3.) @ t a = 25 c derate above 25 c thermal resistance from junction to ambient p d r ja 0.55 4.4 226 w mw/ c c/w forward surge current (note 4.) @ t a = 25 c i fsm 100 a operating and storage temperature range t j , t stg 65 to +150 c 1. 10 x 1000 s, nonrepetitive 2. 1 square copper pad, fr4 board 3. fr4 board, using on semiconductor minimum recommended footprint, as shown in 403a case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, duty cycle = 4 pulses per minute maximum. electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max. @ i f (note 4) = 30 a) (note 5.) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current v br maximum temperature coefficient of v br i f forward current v f forward voltage @ i f 5. 1/2 sine wave or equivalent, pw = 8.3 ms, nonrepetitive duty cycle
p6smb6.8at3 series http://onsemi.com 113 electrical characteristics (devices listed in bold, italic are on semiconductor preferred devices.) v rwm breakdown voltage v c @ i pp (note 8.) device v rwm (note 6.) i r @ v rwm v br volts (note 7.) @ i t v c i pp v br device d ev i ce marking volts m a min nom max ma volts amps %/ c p6smb6.8at3 p6smb7.5at3 p6smb8.2at3 p6smb9.1at3 6v8a 7v5a 8v2a 9v1a 5.8 6.4 7.02 7.78 1000 500 200 50 6.45 7.13 7.79 8.65 6.8 7.51 8.2 9.1 7.14 7.88 8.61 9.55 10 10 10 1 10.5 11.3 12.1 13.4 57 53 50 45 0.057 0.061 0.065 0.068 p6smb10at3 p6smb11at3 p6smb12at3 p6smb13at3 10a 11a 12a 13a 8.55 9.4 10.2 11.1 10 5 5 5 9.5 10.5 11.4 12.4 10 11.05 12 13.05 10.5 11.6 12.6 13.7 1 1 1 1 14.5 15.6 16.7 18.2 41 38 36 33 0.073 0.075 0.078 0.081 p6smb15at3 p6smb16at3 p6smb18at3 p6smb20at3 15a 16a 18a 20a 12.8 13.6 15.3 17.1 5 5 5 5 14.3 15.2 17.1 19 15.05 16 18 20 15.8 16.8 18.9 21 1 1 1 1 21.2 22.5 25.2 27.7 28 27 24 22 0.084 0.086 0.088 0.09 p6smb22at3 p6smb24at3 p6smb27at3 p6smb30at3 22a 24a 27a 30a 18.8 20.5 23.1 25.6 5 5 5 5 20.9 22.8 25.7 28.5 22 24 27.05 30 23.1 25.2 28.4 31.5 1 1 1 1 30.6 33.2 37.5 41.4 20 18 16 14.4 0.092 0.094 0.096 0.097 p6smb33at3 p6smb36at3 p6smb39at3 p6smb43at3 33a 36a 39a 43a 28.2 30.8 33.3 36.8 5 5 5 5 31.4 34.2 37.1 40.9 33 .05 36 39 .05 43.05 34.7 37.8 41 45.2 1 1 1 1 45.7 49.9 53.9 59.3 13.2 12 11.2 10.1 0.098 0.099 0.1 0.101 p6smb47at3 p6smb51at3 p6smb56at3 p6smb62at3 47a 51a 56a 62a 40.2 43.6 47.8 53 5 5 5 5 44.7 48.5 53.2 58.9 47.05 51.05 56 62 49.4 53.6 58.8 65.1 1 1 1 1 64.8 70.1 77 85 9.3 8.6 7.8 7.1 0.101 0.102 0.103 0.104 p6smb68at3 p6smb75at3 p6smb82at3 p6smb91at3 68a 75a 82a 91a 58.1 64.1 70.1 77.8 5 5 5 5 64.6 71.3 77.9 86.5 68 75.05 82 91 71.4 78.8 86.1 95.5 1 1 1 1 92 103 113 125 6.5 5.8 5.3 4.8 0.104 0.105 0.105 0.106 p6smb100at3 p6smb110at3 p6smb120at3 p6smb130at3 100a 110a 120a 130a 85.5 94 102 111 5 5 5 5 95 105 114 124 100 110.5 120 130.5 105 116 126 137 1 1 1 1 137 152 165 179 4.4 4.0 3.6 3.3 0.106 0.107 0.107 0.107 p6smb150at3 p6smb160at3 p6smb170at3 p6smb180at3 150a 160a 170a 180a 128 136 145 154 5 5 5 5 143 152 162 171 150.5 160 170 180 158 168 179 189 1 1 1 1 207 219 234 246 2.9 2.7 2.6 2.4 0.108 0.108 0.108 0.108 p6smb200at3 200a 171 5 190 200 210 1 274 2.2 0.108 6. a transient suppressor is normally selected according to the working peak reverse voltage (v rwm ), which should be equal to or greater than the dc or continuous peak operating voltage level. 7. v br measured at pulse test current i t at an ambient temperature of 25 c. 8. surge current waveform per figure 2 and derate per figure 3.
p6smb6.8at3 series http://onsemi.com 114 p , peak power (kw) p nonrepetitive pulse waveform shown in figure 2 t p , pulse width 1 10 100 0.1 m s1 m s10 m s 100 m s 1 ms 10 ms 0.1 figure 1. pulse rating curve 01234 0 50 100 t, time (ms) value (%) half value - i pp 2 peak value - i pp t r 10 m s figure 2. pulse waveform typical protection circuit v in v l z in load figure 3. pulse derating curve peak pulse derating in % of peak power or current @ t a = 25 c 100 80 60 40 20 0 0 25 50 75 100 125 150 t a , ambient temperature ( c) 120 140 160 t p pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . v br , breakdown voltage (volts) figure 4. capacitance versus breakdown voltage 0.1 1 10 100 1000 10 100 1000 10,000 c, capacitance (pf) measured @ zero bias measured @ v rwm
p6smb6.8at3 series http://onsemi.com 115 application notes response time in most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. in this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. the capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in figure 5. the inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. this inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in figure 6. minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. the smb series have a very good response time, typically < 1 ns and negligible inductance. however, external inductive effects could produce unacceptable overshoot. proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. some input impedance represented by z in is essential to prevent overstress of the protection device. this impedance should be as high as possible, without restricting the circuit operation. duty cycle derating the data of figure 1 applies for non-repetitive conditions and at a lead temperature of 25 c. if the duty cycle increases, the peak power must be reduced as indicated by the curves of figure 7. average power must be derated as the lead or ambient temperature rises above 25 c. the average power derating curve normally given on data sheets may be normalized and used for this purpose. at first glance the derating curves of figure 7 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 m s pulse. however, when the derating factor for a given pulse of figure 7 is multiplied by the peak power value of figure 1 for the same pulse, the results follow the expected trend.
p6smb6.8at3 series http://onsemi.com 116 v l v v in v in (transient) v l t d v v in (transient) overshoot due to inductive effects t d = time delay due to capacitive effect t t figure 5. figure 6. figure 7. typical derating factor for duty cycle derating factor 1 ms 10 m s 1 0.7 0.5 0.3 0.05 0.1 0.2 0.01 0.02 0.03 0.07 100 m s 0.1 0.2 0.5 2 5 10 50 1 20 100 d, duty cycle (%) pulse width 10 ms ul recognition the entire series has underwriters laboratory recognition for the classification of protectors (qvgv2) under the ul standard for safety 497b and file #116110. many competitors only have one or two devices recognized or have recognition in a non-protective category. some competitors have no recognition at all. with the ul497b recognition, our parts successfully passed several tests including strike voltage breakdown test, endurance conditioning, temperature test, dielectric voltage-withstand test, discharge test and several more. whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their protector category.
? semiconductor components industries, llc, 2001 may, 2001 rev. 4 117 publication order number: 1smb10cat3/d 1smb10cat3 series 600 watt peak power zener transient voltage suppressors bidirectional* the smb series is designed to protect voltage sensitive components from high voltage, high energy transients. they have excellent clamping capability, high surge capability, low zener impedance and fast response time. the smb series is supplied in on semiconductor's exclusive, cost-effective, highly reliable surmetic package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. specification features: ? working peak reverse voltage range 10 v to 78 v ? standard zener breakdown voltage range 11.7 v to 91.3 v ? peak power 600 watts @ 1 ms ? esd rating of class 3 (> 16 kv) per human body model ? maximum clamp voltage @ peak pulse current ? low leakage < 5 m a above 10 v ? ul 497b for isolated loop circuit protection ? response time is typically < 1 ns mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds leads: modified lbend providing more contact area to bond pads polarity: polarity band will not be indicated mounting position: any maximum ratings rating symbol value unit peak power dissipation (note 1.) @ t l = 25 c, pulse width = 1 ms p pk 600 w dc power dissipation @ t l = 75 c measured zero lead length (note 2.) derate above 75 c thermal resistance from junction to lead p d r jl 3.0 40 25 w mw/ c c/w dc power dissipation (note 3.) @ t a = 25 c derate above 25 c thermal resistance from junction to ambient p d r ja 0.55 4.4 226 w mw/ c c/w operating and storage temperature range t j , t stg 65 to +150 c 1. 10 x 1000 s, nonrepetitive 2. 1 square copper pad, fr4 board 3. fr4 board, using on semiconductor minimum recommended footprint, as shown in 403a case outline dimensions spec. *please see 1smb5.0at3 to 1smb170at3 for unidirectional devices. plastic surface mount zener overvoltage transient suppressors 1078 volts 600 watt peak power devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. device package shipping ordering information 1smbxxcat3 smb 2500/tape & reel smb case 403a plastic http://onsemi.com y = year ww = work week xxc = specific device code = (see table next page) yww xxc marking diagram 2the at3o suffix refers to a 13 inch reel.
bidirectional tvs i pp i pp v i i r i t i t i r v rwm v c v br v rwm v c v br 1smb10cat3 series http://onsemi.com 118 electrical characteristics (t a = 25 c unless otherwise noted) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current electrical characteristics (devices listed in bold, italic are on semiconductor preferred devices.) v rwm breakdown voltage v c @ i pp (note 6.) device v rwm (note 4.) i r @ v rwm v br (note 5.) volts @ i t v c i pp device d ev i ce marking volts m a min nom max ma volts amps 1smb10cat3 1smb11cat3 1smb12cat3 1smb13cat3 kxc kzc lec lgc 10 11 12 13 5.0 5.0 5.0 5.0 11.1 12.2 13.3 14.4 11.69 12.84 14.00 15.16 12.27 13.5 14.7 15.9 1.0 1.0 1.0 1.0 17.0 18.2 19.9 21.5 35.3 33.0 30.2 27.9 1smb14cat3 1smb15cat3 1smb16cat3 1smb17cat3 lkc lmc lpc lrc 14 15 16 17 5.0 5.0 5.0 5.0 15.6 16.7 17.8 18.9 16.42 17.58 18.74 19.90 17.2 18.5 19.7 20.9 1.0 1.0 1.0 1.0 23.2 24.4 26.0 27.6 25.8 24.0 23.1 21.7 1smb18cat3 1smb20cat3 1smb22cat3 1smb24cat3 ltc lvc lxc lzc 18 20 22 24 5.0 5.0 5.0 5.0 20.0 22.2 24.4 26.7 21.06 23.37 25.69 28.11 22.1 24.5 27.0 29.5 1.0 1.0 1.0 1.0 29.2 32.4 35.5 38.9 20.5 18.5 16.9 15.4 1smb26cat3 1smb28cat3 1smb30cat3 1smb33cat3 mec mgc mkc mmc 26 28 30 33 5.0 5.0 5.0 5.0 28.9 31.1 33.3 36.7 30.42 32.74 35.06 38.63 31.9 34.4 36.8 40.6 1.0 1.0 1.0 1.0 42.1 45.4 48.4 53.3 14.2 13.2 12.4 11.3 1smb36cat3 1smb40cat3 1smb43cat3 1smb45cat3 mpc mrc mtc mvc 36 40 43 45 5.0 5.0 5.0 5.0 40.0 44.4 47.8 50.0 42.11 46.74 50.32 52.63 44.2 49.1 52.8 55.3 1.0 1.0 1.0 1.0 58.1 64.5 69.4 72.2 10.3 9.3 8.6 8.3 1smb48cat3 1smb51cat3 1smb54cat3 1smb58cat3 mxc mzc nec ngc 48 51 54 58 5.0 5.0 5.0 5.0 53.3 56.7 60.0 64.4 56.11 59.69 63.16 67.79 58.9 62.7 66.32 71.18 1.0 1.0 1.0 1.0 77.4 82.4 87.1 93.6 7.7 7.3 6.9 6.4 1smb60cat3 1smb64cat3 1smb70cat3 1smb75cat3 nkc nmc npc nrc 60 64 70 75 5.0 5.0 5.0 5.0 66.7 71.1 77.8 83.3 70.21 74.84 81.90 91.65 73.72 78.58 85.99 92.07 1.0 1.0 1.0 1.0 96.8 103 113 121 6.2 5.8 5.3 4.9 1smb78cat3 ntc 78 5.0 86.7 91.26 95.83 1.0 126 4.7 4. a transient suppressor is normally selected according to the working peak reverse voltage (v rwm ), which should be equal to or greater than the dc or continuous peak operating voltage level. 5. v br measured at pulse test current i t at an ambient temperature of 25 c. 6. surge current waveform per figure 2 and derate per figure 3 of the general data 600 watt at the beginning of this group.
1smb10cat3 series http://onsemi.com 119 nonrepetitive pulse waveform shown in figure 2 t p , pulse width 1 10 100 0.1 m s1 m s10 m s 100 m s 1 ms 10 ms 0.1 figure 1. pulse rating curve 01234 0 50 100 t, time (ms) value (%) half value - i pp 2 peak value - i pp t r 10 m s figure 2. pulse waveform typical protection circuit v in v l z in load figure 3. pulse derating curve peak pulse derating in % of peak power or current @ t a = 25 c 100 80 60 40 20 0 0 25 50 75 100 125 150 t a , ambient temperature ( c) 120 140 160 t p pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . p pk , peak power (kw)
1smb10cat3 series http://onsemi.com 120 application notes response time in most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. in this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. the capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in figure 4. the inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. this inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in figure 5. minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. the smb series have a very good response time, typically < 1 ns and negligible inductance. however, external inductive effects could produce unacceptable overshoot. proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. some input impedance represented by z in is essential to prevent overstress of the protection device. this impedance should be as high as possible, without restricting the circuit operation. duty cycle derating the data of figure 1 applies for non-repetitive conditions and at a lead temperature of 25 c. if the duty cycle increases, the peak power must be reduced as indicated by the curves of figure 6. average power must be derated as the lead or ambient temperature rises above 25 c. the average power derating curve normally given on data sheets may be normalized and used for this purpose. at first glance the derating curves of figure 6 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 m s pulse. however, when the derating factor for a given pulse of figure 6 is multiplied by the peak power value of figure 1 for the same pulse, the results follow the expected trend.
1smb10cat3 series http://onsemi.com 121 v l v v in v in (transient) v l t d v v in (transient) overshoot due to inductive effects t d = time delay due to capacitive effect t t figure 4. figure 5. figure 6. typical derating factor for duty cycle derating factor 1 ms 10 m s 1 0.7 0.5 0.3 0.05 0.1 0.2 0.01 0.02 0.03 0.07 100 m s 0.1 0.2 0.5 2 5 10 50 1 20 100 d, duty cycle (%) pulse width 10 ms ul recognition the entire series has underwriters laboratory recognition for the classification of protectors (qvgv2) under the ul standard for safety 497b and file #116110. many competitors only have one or two devices recognized or have recognition in a non-protective category. some competitors have no recognition at all. with the ul497b recognition, our parts successfully passed several tests including strike voltage breakdown test, endurance conditioning, temperature test, dielectric voltage-withstand test, discharge test and several more. whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their protector category.
? semiconductor components industries, llc, 2001 may, 2001 rev. 4 122 publication order number: p6smb11cat3/d p6smb11cat3 series 600 watt peak power zener transient voltage suppressors bidirectional* the smb series is designed to protect voltage sensitive components from high voltage, high energy transients. they have excellent clamping capability, high surge capability, low zener impedance and fast response time. the smb series is supplied in on semiconductor's exclusive, cost-effective, highly reliable surmetic ? package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. specification features: ? working peak reverse voltage range 9.4 to 77.8 v ? standard zener breakdown voltage range 11 to 91 v ? peak power 600 watts @ 1 ms ? esd rating of class 3 (>16 kv) per human body model ? maximum clamp voltage @ peak pulse current ? low leakage < 5 m a above 10 v ? ul 497b for isolated loop circuit protection ? response time is typically < 1 ns mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds leads: modified lbend providing more contact area to bond pads polarity: polarity band will not be indicated mounting position: any maximum ratings rating symbol value unit peak power dissipation (note 1.) @ t l = 25 c, pulse width = 1 ms p pk 600 w dc power dissipation @ t l = 75 c measured zero lead length (note 2.) derate above 75 c thermal resistance from junction to lead p d r jl 3.0 40 25 w mw/ c c/w dc power dissipation (note 3.) @ t a = 25 c derate above 25 c thermal resistance from junction to ambient p d r ja 0.55 4.4 226 w mw/ c c/w operating and storage temperature range t j , t stg 65 to +150 c 1. 10 x 1000 s, nonrepetitive 2. 1 square copper pad, fr4 board 3. fr4 board, using on semiconductor minimum recommended footprint, as shown in 403a case outline dimensions spec. *please see p6smb6.8at3 to p6smb200at3 for unidirectional devices. plastic surface mount zener overvoltage transient suppressors 9.478 volts 600 watt peak power devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. device package shipping ordering information p6smbxxcat3 smb 2500/tape & reel smb case 403a plastic http://onsemi.com y = year ww = work week xxc = specific device code = (see table next page) yww xxc marking diagram 2the at3o suffix refers to a 13 inch reel.
bidirectional tvs i pp i pp v i i r i t i t i r v rwm v c v br v rwm v c v br p6smb11cat3 series http://onsemi.com 123 electrical characteristics (t a = 25 c unless otherwise noted) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current v br maximum temperature coefficient of v br electrical characteristics (devices listed in bold, italic are on semiconductor preferred devices.) v rwm breakdown voltage v c @ i pp (note 6.) device v rwm (note 4.) i r @ v rwm v br volts (note 5.) @ i t v c i pp v br device d ev i ce marking volts m a min nom max ma volts amps %/ c p6smb11cat3 p6smb12cat3 p6smb13cat3 11c 12c 13c 9.4 10.2 11.1 5 5 5 10.5 11.4 12.4 11.05 12 13.05 11.6 12.6 13.7 1 1 1 15.6 16.7 18.2 38 36 33 0.075 0.078 0.081 p6smb15cat3 p6smb16cat3 p6smb18cat3 p6smb20cat3 15c 16c 18c 20c 12.8 13.6 15.3 17.1 5 5 5 5 14.3 15.2 17.1 19 15.05 16 18 20 15.8 16.8 18.9 21 1 1 1 1 21.2 22.5 25.2 27.7 28 27 24 22 0.084 0.086 0.088 0.09 p6smb22cat3 p6smb24cat3 p6smb27cat3 p6smb30cat3 22c 24c 27c 30c 18.8 20.5 23.1 25.6 5 5 5 5 20.9 22.8 25.7 28.5 22 24 27.05 30 23.1 25.2 28.4 31.5 1 1 1 1 30.6 33.2 37.5 41.4 20 18 16 14.4 0.09 0.094 0.096 0.097 p6smb33cat3 p6smb36cat3 p6smb39cat3 p6smb43cat3 33c 36c 39c 43c 28.2 30.8 33.3 36.8 5 5 5 5 31.4 34.2 37.1 40.9 33.05 36 39.05 43.05 34.7 37.8 41 45.2 1 1 1 1 45.7 49.9 53.9 59.3 13.2 12 11.2 10.1 0.098 0.099 0.1 0.101 p6smb47cat3 p6smb51cat3 p6smb56cat3 p6smb62cat3 47c 51c 56c 62c 40.2 43.6 47.8 53 5 5 5 5 44.7 48.5 53.2 58.9 47.05 51.05 56 62 49.4 53.6 58.8 65.1 1 1 1 1 64.8 70.1 77 85 9.3 8.6 7.8 7.1 0.101 0.102 0.103 0.104 p6smb68cat3 p6smb75cat3 p6smb82cat3 p6smb91cat3 68c 75c 82c 91c 58.1 64.1 70.1 77.8 5 5 5 5 64.6 71.3 77.9 86.5 68 75.05 82 91 71.4 78.8 86.1 95.5 1 1 1 1 92 103 113 125 6.5 5.8 5.3 4.8 0.104 0.105 0.105 0.106 4. a transient suppressor is normally selected according to the working peak reverse voltage (v rwm ), which should be equal to or greater than the dc or continuous peak operating voltage level. 5. v br measured at pulse test current i t at an ambient temperature of 25 c. 6. surge current waveform per figure 2 and derate per figure 3 of the general data 600 watt at the beginning of this group.
p6smb11cat3 series http://onsemi.com 124 p , peak power (kw) p nonrepetitive pulse waveform shown in figure 2 t p , pulse width 1 10 100 0.1 m s1 m s10 m s 100 m s 1 ms 10 ms 0.1 figure 1. pulse rating curve 01234 0 50 100 t, time (ms) value (%) half value - i pp 2 peak value - i pp t r 10 m s figure 2. pulse waveform typical protection circuit v in v l z in load figure 3. pulse derating curve peak pulse derating in % of peak power or current @ t a = 25 c 100 80 60 40 20 0 0 25 50 75 100 125 150 t a , ambient temperature ( c) 120 140 160 t p pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp .
p6smb11cat3 series http://onsemi.com 125 application notes response time in most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. in this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. the capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in figure 4. the inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. this inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in figure 5. minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. the smb series have a very good response time, typically < 1 ns and negligible inductance. however, external inductive effects could produce unacceptable overshoot. proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. some input impedance represented by z in is essential to prevent overstress of the protection device. this impedance should be as high as possible, without restricting the circuit operation. duty cycle derating the data of figure 1 applies for non-repetitive conditions and at a lead temperature of 25 c. if the duty cycle increases, the peak power must be reduced as indicated by the curves of figure 6. average power must be derated as the lead or ambient temperature rises above 25 c. the average power derating curve normally given on data sheets may be normalized and used for this purpose. at first glance the derating curves of figure 6 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 m s pulse. however, when the derating factor for a given pulse of figure 6 is multiplied by the peak power value of figure 1 for the same pulse, the results follow the expected trend.
p6smb11cat3 series http://onsemi.com 126 v l v v in v in (transient) v l t d v v in (transient) overshoot due to inductive effects t d = time delay due to capacitive effect t t figure 4. figure 5. figure 6. typical derating factor for duty cycle derating factor 1 ms 10 m s 1 0.7 0.5 0.3 0.05 0.1 0.2 0.01 0.02 0.03 0.07 100 m s 0.1 0.2 0.5 2 5 10 50 1 20 100 d, duty cycle (%) pulse width 10 ms ul recognition the entire series has underwriters laboratory recognition for the classification of protectors (qvgv2) under the ul standard for safety 497b and file #116110. many competitors only have one or two devices recognized or have recognition in a non-protective category. some competitors have no recognition at all. with the ul497b recognition, our parts successfully passed several tests including strike voltage breakdown test, endurance conditioning, temperature test, dielectric voltage-withstand test, discharge test and several more. whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their protector category.
? semiconductor components industries, llc, 2001 may, 2001 rev. 3 127 publication order number: 1smc5.0at3/d 1smc5.0at3 series 1500 watt peak power zener transient voltage suppressors unidirectional* the smc series is designed to protect voltage sensitive components from high voltage, high energy transients. they have excellent clamping capability, high surge capability, low zener impedance and fast response time. the smc series is supplied in on semiconductor's exclusive, cost-effective, highly reliable surmetic ? package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. specification features: ? working peak reverse voltage range 5.0 v to 78 v ? standard zener breakdown voltage range 6.7 v to 91.25 v ? peak power 1500 watts @ 1 ms ? esd rating of class 3 (>16 kv) per human body model ? maximum clamp voltage @ peak pulse current ? low leakage < 5 m a above 10 v ? ul 497b for isolated loop circuit protection ? maximum temperature coefficient specified ? response time is typically < 1 ns mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds leads: modified lbend providing more contact area to bond pads polarity: cathode indicated by molded polarity notch mounting position: any maximum ratings please see the table on the following page plastic surface mount zener transient voltage suppressors 5.078 volts 1500 watt peak power device package shipping ordering information 1smcxxxat3 smc 2500/tape & reel smc case 403 plastic http://onsemi.com cathode anode y = year ww = work week gxx = specific device code = (see table on page 129) yww gxx marking diagram *bidirectional devices will not be available in this series. 2the at3o suffix refers to a 13 inch reel. devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value.
unidirectional tvs i pp i f v i i r i t v rwm v c v br v f 1smc5.0at3 series http://onsemi.com 128 maximum ratings rating symbol value unit peak power dissipation (note 1.) @ t l = 25 c, pulse width = 1 ms p pk 1500 w dc power dissipation @ t l = 75 c measured zero lead length (note 2.) derate above 75 c thermal resistance from junction to lead p d r jl 4.0 54.6 18.3 w mw/ c c/w dc power dissipation (note 3.) @ t a = 25 c derate above 25 c thermal resistance from junction to ambient p d r ja 0.75 6.1 165 w mw/ c c/w forward surge current (note 4.) @ t a = 25 c i fsm 200 a operating and storage temperature range t j , t stg 65 to +150 c 1. 10 x 1000 s, nonrepetitive 2. 1 square copper pad, fr4 board 3. fr4 board, using on semiconductor minimum recommended footprint, as shown in 403 case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, duty cycle = 4 pulses per minute maximum. electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max @ i f = 100 a) (note 5.) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current i f forward current v f forward voltage @ i f 5. 1/2 sine wave or equivalent, pw = 8.3 ms nonrepetitive duty cycle
1smc5.0at3 series http://onsemi.com 129 electrical characteristics (t a = 25 c unless otherwise noted) v rwm breakdown voltage v c @ i pp (note 8.) device v rwm (note 6.) i r @ v rwm v br volts (note 7.) @ i t v c i pp device d ev i ce marking volts m a min nom max ma volts amps 1smc5.0at3 1smc6.0at3 1smc6.5at3 1smc7.0at3 gde gdg gdk gdm 5.0 6.0 6.5 7.0 1000 1000 500 200 6.4 6.67 7.22 7.78 6.7 7.02 7.6 8.19 7.0 7.37 7.98 8.6 10 10 10 10 9.2 10.3 11.2 12 163 145.6 133.9 125 1smc7.5at3 1smc8.0at3 1smc8.5at3 1smc9.0at3 gdp gdr gdt gdv 7.5 8.0 8.5 9.0 100 50 25 10 8.33 8.89 9.44 10 8.77 9.36 9.92 10.55 9.21 9.83 10.4 11.1 1 1 1 1 12.9 13.6 14.4 15.4 116.3 110.3 104.2 97.4 1smc10at3 1smc11at3 1smc12at3 1smc13at3 gdx gdz gee geg 10 11 12 13 5 5 5 5 11.1 12.2 13.3 14.4 11.7 12.85 14 15.15 12.3 13.5 14.7 15.9 1 1 1 1 17 18.2 19.9 21.5 88.2 82.4 75.3 69.7 1smc14at3 1smc15at3 1smc16at3 1smc17at3 gek gem gep ger 14 15 16 17 5 5 5 5 15.6 16.7 17.8 18.9 16.4 17.6 18.75 19.9 17.2 18.5 19.7 20.9 1 1 1 1 23.2 24.4 26 27.6 64.7 61.5 57.7 53.3 1smc18at3 1smc20at3 1smc22at3 1smc24at3 get gev gex gez 18 20 22 24 5 5 5 5 20 22.2 24.4 26.7 21.05 23.35 25.65 28.1 22.1 24.5 26.9 29.5 1 1 1 1 29.2 32.4 35.5 38.9 51.4 46.3 42.2 38.6 1smc26at3 1smc28at3 1smc30at3 1smc33at3 gfe gfg gfk gfm 26 28 30 33 5 5 5 5 28.9 31.1 33.3 36.7 30.4 32.75 35.05 38.65 31.9 34.4 36.8 40.6 1 1 1 1 42.1 45.4 48.4 53.3 35.6 33 31 28.1 1smc36at3 1smc40at3 1smc43at3 1smc45at3 gfp gfr gft gfv 36 40 43 45 5 5 5 5 40 44.4 47.8 50 42.1 46.75 50.3 52.65 44.2 49.1 52.8 55.3 1 1 1 1 58.1 64.5 69.4 72.2 25.8 32.2 21.6 20.6 1smc48at3 1smc51at3 1smc54at3 1smc58at3 gfx gfz gge ggg 48 51 54 58 5 5 5 5 53.3 56.7 60 64.4 56.1 59.7 63.15 67.8 58.9 62.7 66.3 71.2 1 1 1 1 77.4 82.4 87.1 93.6 19.4 18.2 17.2 16 1smc60at3 1smc64at3 1smc70at3 1smc75at3 1smc78at3 ggk ggm ggp ggr ggt 60 64 70 75 78 5 5 5 5 5 66.7 71.1 77.8 83.3 86.7 70.2 74.85 81.9 87.7 91.25 73.7 78.6 86 92.1 95.8 1 1 1 1 1 96.8 103 113 121 126 15.5 14.6 13.3 12.4 11.4 6. a transient suppressor is normally selected according to the maximum working peak reverse voltage (v rwm ), which should be equal to or greater than the dc or continuous peak operating voltage level. 7. v br measured at pulse test current i t at an ambient temperature of 25 c. 8. surge current waveform per figure 2 and derate per figure 3 of the general data 1500 watt at the beginning of this group.
1smc5.0at3 series http://onsemi.com 130 nonrepetitive pulse waveform shown in figure 2 t p , pulse width 1 10 100 0.1 m s1 m s10 m s 100 m s 1 ms 10 ms figure 1. pulse rating curve 01234 0 50 100 t, time (ms) value (%) half value - i pp 2 peak value - i pp figure 2. pulse waveform figure 3. pulse derating curve peak pulse derating in % of peak power or current @ t a = 25 c 100 80 60 40 20 0 0 25 50 75 100 125 150 t a , ambient temperature ( c) 120 140 160 t p pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . d v br , instantaneous increase in v br above v br (nom) (volts) 0.3 0.5 0.7 1 2 3 5 7 10 20 30 1000 500 200 100 50 1 2 5 10 20 t l =25 c t p =10 m s v br (nom)=6.8to13v 20v 24v 43v 75v 120v 180v figure 4. dynamic impedance p pk , peak power (kw) t r 10 m s i t , test current (amps) ul recognition the entire series has underwriters laboratory recognition for the classification of protectors (qvgv2) under the ul standard for safety 497b and file #116110. many competitors only have one or two devices recognized or have recognition in a non-protective category. some competitors have no recognition at all. with the ul497b recognition, our parts successfully passed several tests including strike voltage breakdown test, endurance conditioning, temperature test, dielectric voltage-withstand test, discharge test and several more. whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their protector category.
1smc5.0at3 series http://onsemi.com 131 application notes response time in most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. in this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. the capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in figure 5. the inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. this inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in figure 6. minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. the smc series have a very good response time, typically < 1 ns and negligible inductance. however, external inductive effects could produce unacceptable overshoot. proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. some input impedance represented by z in is essential to prevent overstress of the protection device. this impedance should be as high as possible, without restricting the circuit operation. duty cycle derating the data of figure 1 applies for non-repetitive conditions and at a lead temperature of 25 c. if the duty cycle increases, the peak power must be reduced as indicated by the curves of figure 7. average power must be derated as the lead or ambient temperature rises above 25 c. the average power derating curve normally given on data sheets may be normalized and used for this purpose. at first glance the derating curves of figure 7 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 m s pulse. however, when the derating factor for a given pulse of figure 7 is multiplied by the peak power value of figure 1 for the same pulse, the results follow the expected trend.
1smc5.0at3 series http://onsemi.com 132 v l v v in v in (transient) v l t d v v in (transient) overshoot due to inductive effects t d = time delay due to capacitive effect t t figure 5. figure 6. figure 7. typical derating factor for duty cycle derating factor 1 ms 10 m s 1 0.7 0.5 0.3 0.05 0.1 0.2 0.01 0.02 0.03 0.07 100 m s 0.1 0.2 0.5 2 5 10 50 1 20 100 d, duty cycle (%) pulse width 10 ms typical protection circuit v in v l z in load
? semiconductor components industries, llc, 2001 may, 2001 rev. 4 133 publication order number: 1.5smc6.8at3/d 1.5smc6.8at3 series 1500 watt peak power zener transient voltage suppressors unidirectional* the smc series is designed to protect voltage sensitive components from high voltage, high energy transients. they have excellent clamping capability, high surge capability, low zener impedance and fast response time. the smc series is supplied in on semiconductor's exclusive, cost-effective, highly reliable surmetic ? package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. specification features: ? working peak reverse voltage range 5.8 to 77.8 v ? standard zener breakdown voltage range 6.8 to 91 v ? peak power 1500 watts @ 1 ms ? esd rating of class 3 (>16 kv) per human body model ? maximum clamp voltage @ peak pulse current ? low leakage < 5 m a above 10 v ? ul 497b for isolated loop circuit protection ? maximum temperature coefficient specified ? response time is typically < 1 ns mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds leads: modified lbend providing more contact area to bond pads polarity: cathode indicated by molded polarity notch mounting position: any maximum ratings please see the table on the following page plastic surface mount zener overvoltage transient suppressors 5.878 volts 1500 watt peak power devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. device package shipping ordering information 1.5smcxxxat3 smc 2500/tape & reel smc case 403 plastic http://onsemi.com cathode anode y = year ww = work week xxxa = specific device code = (see table on page 135) yww xxxa marking diagram *bidirectional devices will not be available in this series. 2the at3o suffix refers to a 13 inch reel.
unidirectional tvs i pp i f v i i r i t v rwm v c v br v f 1.5smc6.8at3 series http://onsemi.com 134 maximum ratings rating symbol value unit peak power dissipation (note 1.) @ t l = 25 c, pulse width = 1 ms p pk 1500 w dc power dissipation @ t l = 75 c measured zero lead length (note 2.) derate above 75 c thermal resistance from junction to lead p d r jl 4.0 54.6 18.3 w mw/ c c/w dc power dissipation (note 3.) @ t a = 25 c derate above 25 c thermal resistance from junction to ambient p d r ja 0.75 6.1 165 w mw/ c c/w forward surge current (note 4.) @ t a = 25 c i fsm 200 a operating and storage temperature range t j , t stg 65 to +150 c 1. 10 x 1000 s, nonrepetitive 2. 1 square copper pad, fr4 board 3. fr4 board, using on semiconductor minimum recommended footprint, as shown in 403 case outline dimensions spec. 4. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, duty cycle = 4 pulses per minute maximum. electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max. @ i f (note ) = 100 a) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current v br maximum temperature coefficient of v br i f forward current v f forward voltage @ i f 5. 1/2 sine wave or equivalent, pw = 8.3 ms nonrepetitive duty cycle
1.5smc6.8at3 series http://onsemi.com 135 electrical characteristics (devices listed in bold, italic are on semiconductor preferred devices.) v rwm breakdown voltage v c @ i pp (note 8.) device v rwm (note 6.) i r @ v rwm v br volts (note 7.) @ i t v c i pp v br device d ev i ce marking volts m a min nom max ma volts amps %/ c 1.5smc6.8at3 1.5smc7.5at3 1.5smc8.2at3 1.5smc9.1at3 6v8a 7v5a 8v2a 9v1a 5.8 6.4 7.02 7.78 1000 500 200 50 6.45 7.13 7.79 8.65 6.8 7.5 8.2 9.1 7.14 7.88 8.61 9.55 10 10 10 1 10.5 11.3 12.1 13.4 143 132 124 112 0.057 0.061 0.065 0.068 1.5smc10at3 1.5smc11at3 1.5smc12at3 1.5smc13at3 10a 11a 12a 13a 8.55 9.4 10.2 11.1 10 5 5 5 9.5 10.5 11.4 12.4 10 11 12 13 10.5 11.6 12.6 13.7 1 1 1 1 14.5 15.6 16.7 18.2 103 96 90 82 0.073 0.075 0.078 0.081 1.5smc15at3 1.5smc16at3 1.5smc18at3 1.5smc20at3 15a 16a 18a 20a 12.8 13.6 15.3 17.1 5 5 5 5 14.3 15.2 17.1 19 15 16 18 20 15.8 16.8 18.9 21 1 1 1 1 21.2 22.5 25.2 27.7 71 67 59.5 54 0.084 0.086 0.088 0.09 1.5smc22at3 1.5smc24at3 1.5smc27at3 1.5smc30at3 22a 24a 27a 30a 18.8 20.5 23.1 25.6 5 5 5 5 20.9 22.8 25.7 28.5 22 24 27 30 23.1 25.2 28.4 31.5 1 1 1 1 30.6 33.2 37.5 41.4 49 45 40 36 0.092 0.094 0.096 0.097 1.5smc33at3 1.5smc36at3 1.5smc39at3 1.5smc43at3 33a 36a 39a 43a 28.2 30.8 33.3 36.8 5 5 5 5 31.4 34.2 37.1 40.9 33 36 39 43 34.7 37.8 41 45.2 1 1 1 1 45.7 49.9 53.9 59.3 33 30 28 25.3 0.098 0.099 0.1 0.101 1.5smc47at3 1.5smc51at3 1.5smc56at3 1.5smc62at3 47a 51a 56a 62a 40.2 43.6 47.8 53 5 5 5 5 44.7 48.5 53.2 58.9 47 51 56 62 49.4 53.6 58.8 65.1 1 1 1 1 64.8 70.1 77 85 23.2 21.4 19.5 17.7 0.101 0.102 0.103 0.104 1.5smc68at3 1.5smc75at3 1.5smc82at3 1.5smc91at3 68a 75a 82a 91a 58.1 64.1 70.1 77.8 5 5 5 5 64.6 71.3 77.9 86.5 68 75 82 91 71.4 78.8 86.1 95.5 1 1 1 1 92 103 113 125 16.3 14.6 13.3 12 0.104 0.105 0.105 0.106 6. a transient suppressor is normally selected according to the working peak reverse voltage (v rwm ), which should be equal to or greater than the dc or continuous peak operating voltage level. 7. v br measured at pulse test current i t at an ambient temperature of 25 c. 8. surge current waveform per figure 2 and derate per figure 3 of the general data 1500 watt at the beginning of this group.
1.5smc6.8at3 series http://onsemi.com 136 nonrepetitive pulse waveform shown in figure 2 t p , pulse width 1 10 100 0.1 m s1 m s10 m s 100 m s 1 ms 10 ms figure 1. pulse rating curve 01234 0 50 100 t, time (ms) value (%) half value - i pp 2 peak value - i pp figure 2. pulse waveform figure 3. pulse derating curve peak pulse derating in % of peak power or current @ t a = 25 c 100 80 60 40 20 0 0 25 50 75 100 125 150 t a , ambient temperature ( c) 120 140 160 t p pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . d v br , instantaneous increase in v br above v br (nom) (volts) 0.3 0.5 0.7 1 2 3 5 7 10 20 30 1000 500 200 100 50 1 2 5 10 20 t l =25 c t p =10 m s v br (nom)=6.8to13v 20v 24v 43v 75v 120v 180v figure 4. dynamic impedance p pk , peak power (kw) t r 10 m s i t , test current (amps) ul recognition the entire series has underwriters laboratory recognition for the classification of protectors (qvgv2) under the ul standard for safety 497b and file #116110. many competitors only have one or two devices recognized or have recognition in a non-protective category. some competitors have no recognition at all. with the ul497b recognition, our parts successfully passed several tests including strike voltage breakdown test, endurance conditioning, temperature test, dielectric voltage-withstand test, discharge test and several more. whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their protector category.
1.5smc6.8at3 series http://onsemi.com 137 application notes response time in most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. in this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. the capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in figure 5. the inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. this inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in figure 6. minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. the smc series have a very good response time, typically < 1 ns and negligible inductance. however, external inductive effects could produce unacceptable overshoot. proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. some input impedance represented by z in is essential to prevent overstress of the protection device. this impedance should be as high as possible, without restricting the circuit operation. duty cycle derating the data of figure 1 applies for non-repetitive conditions and at a lead temperature of 25 c. if the duty cycle increases, the peak power must be reduced as indicated by the curves of figure 7. average power must be derated as the lead or ambient temperature rises above 25 c. the average power derating curve normally given on data sheets may be normalized and used for this purpose. at first glance the derating curves of figure 7 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 m s pulse. however, when the derating factor for a given pulse of figure 7 is multiplied by the peak power value of figure 1 for the same pulse, the results follow the expected trend.
1.5smc6.8at3 series http://onsemi.com 138 v l v v in v in (transient) v l t d v v in (transient) overshoot due to inductive effects t d = time delay due to capacitive effect t t figure 5. figure 6. figure 7. typical derating factor for duty cycle derating factor 1 ms 10 m s 1 0.7 0.5 0.3 0.05 0.1 0.2 0.01 0.02 0.03 0.07 100 m s 0.1 0.2 0.5 2 5 10 50 1 20 100 d, duty cycle (%) pulse width 10 ms typical protection circuit v in v l z in load
http://onsemi.com 139 chapter 5 transient voltage suppressor arrays surface mounted data sheets
? semiconductor components industries, llc, 2001 march, 2001 rev. 5 140 publication order number: mmbz5v6alt1/d mmbz5v6alt1 series preferred devices 24 and 40 watt peak power zener transient voltage suppressors sot23 dual common anode zeners for esd protection these dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. they are intended for use in voltage and esd sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. their dual junction common anode design protects two separate lines using only one package. these devices are ideal for situations where board space is at a premium. specification features: ? sot23 package allows either two separate unidirectional configurations or a single bidirectional configuration ? working peak reverse voltage range 3 v to 26 v ? standard zener breakdown voltage range 5.6 v to 33 v ? peak power 24 or 40 watts @ 1.0 ms (unidirectional), per figure 5. waveform ? esd rating of class n (exceeding 16 kv) per the human body model ? maximum clamping voltage @ peak pulse current ? low leakage < 5.0 m a ? flammability rating ul 94vo mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic case finish: corrosion resistant finish, easily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds package designed for optimal automated board assembly small package size for high density applications available in 8 mm tape and reel use the device number to order the 7 inch/3,000 unit reel. replace the at1o with at3o in the device number to order the 13 inch/10,000 unit reel. preferred devices are recommended choices for future use and best overall value. sot23 case 318 style 12 http://onsemi.com 1 3 2 1 2 3 pin 1. cathode 2. cathode 3. anode device package shipping ordering information mmbz5v6alt1 sot23 3000/tape & reel mmbz6v2alt1 sot23 3000/tape & reel mmbz6v8alt1 sot23 3000/tape & reel mmbz10valt1 sot23 3000/tape & reel xxx mmbz12valt1 sot23 3000/tape & reel mmbz15valt1 sot23 3000/tape & reel mmbz18valt1 sot23 3000/tape & reel mmbz20valt1 sot23 3000/tape & reel mmbz27valt1 sot23 3000/tape & reel mmbz33valt1 sot23 3000/tape & reel marking diagram xxx = device code m = date code m see specific marking information in the device marking column of the table on page 142 of this data sheet. device marking information mmbz9v1alt1 sot23 3000/tape & reel
unidirectional tvs i pp i f v i i r i t v rwm v c v br v f mmbz5v6alt1 series http://onsemi.com 141 maximum ratings rating symbol value unit peak power dissipation @ 1.0 ms (note 1.) mmbz5v6alt1 thru mmbz10valt1 @ t l 25 c mmbz12valt1 thru mmbz33valt1 p pk 24 40 watts total power dissipation on fr5 board (note 2.) @ t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance junction to ambient r q ja 556 c/w total power dissipation on alumina substrate (note 3.) @ t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance junction to ambient r q ja 417 c/w junction and storage temperature range t j , t stg 55 to +150 c lead solder temperature maximum (10 second duration) t l 260 c 1. nonrepetitive current pulse per figure 5. and derate above t a = 25 c per figure 6. 2. fr5 = 1.0 x 0.75 x 0.62 in. 3. alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina *other voltages may be available upon request electrical characteristics (t a = 25 c unless otherwise noted) unidirectional (circuit tied to pins 1 and 3 or 2 and 3) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current v br maximum temperature coefficient of v br i f forward current v f forward voltage @ i f z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk
mmbz5v6alt1 series http://onsemi.com 142 electrical characteristics (t a = 25 c unless otherwise noted) unidirectional (circuit tied to pins 1 and 3 or pins 2 and 3) (v f = 0.9 v max @ i f = 10 ma) 24 watts i r @ breakdown voltage max zener impedance (note 5.) v c @ i pp (note 6.) device v rwm i r @ v rwm v br (note 4.) (v) @ i t z zt @ i zt z zk @ i zk v c i pp v br device device marking volts a min nom max ma w w ma v a mv/ c mmbz5v6alt1 5a6 3.0 5.0 5.32 5.6 5.88 20 11 1600 0.25 8.0 3.0 1.26 mmbz6v2alt1 6a2 3.0 0.5 5.89 6.2 6.51 1.0 8.7 2.76 2.80 (v f = 1.1 v max @ i f = 200 ma) breakdown voltage v c @ i pp (note 6.) device v rwm i r @ v rwm v br (note 4.) (v) @ i t v c i pp v br device device marking volts a min nom max ma v a mv/ c mmbz6v8alt1 6a8 4.5 0.5 6.46 6.8 7.14 1.0 9.6 2.5 3.4 mmbz9v1alt1 9a1 6.0 0.3 8.65 9.1 9.56 1.0 14 1.7 7.5 mmbz10valt1 10a 6.5 0.3 9.50 10 10.5 1.0 14.2 1.7 7.5 (v f = 1.1 v max @ i f = 200 ma) 40 watts breakdown voltage v c @ i pp (note 6.) device v rwm i r @ v rwm v br (note 4.) (v) @ i t v c i pp v br device device marking volts na min nom max ma v a mv/ c mmbz12valt1 12a 8.5 200 11.40 12 12.60 1.0 17 2.35 7.5 mmbz15valt1 15a 12 50 14.25 15 15.75 1.0 21 1.9 12.3 mmbz18valt1 18a 14.5 50 17.10 18 18.90 1.0 25 1.6 15.3 mmbz20valt1 20a 17 50 19.00 20 21.00 1.0 28 1.4 17.2 mmbz27valt1 27a 22 50 25.65 27 28.35 1.0 40 1.0 24.3 mmbz33valt1 33a 26 50 31.35 33 34.65 1.0 46 0.87 30.4 4. v br measured at pulse test current i t at an ambient temperature of 25 c. 5. z zt and z zk are measured by dividing the ac voltage drop across the device by the ac current applied. the specified limits are for i z(ac) = 0.1 i z(dc) , with the ac frequency = 1.0 khz. 6. surge current waveform per figure 5. and derate per figure 6.
mmbz5v6alt1 series http://onsemi.com 143 typical characteristics -40 +50 18 breakdown voltage (volts) figure 1. typical breakdown voltage versus temperature (upper curve for each voltage is bidirectional mode, lower curve is unidirectional mode) 0 temperature ( c) +100 +150 15 12 9 6 3 0 (v br @ i t ) -40 +25 1000 figure 2. typical leakage current versus temperature temperature ( c) +85 +125 100 10 1 0.1 0.01 i r (na) figure 3. typical capacitance versus bias voltage (upper curve for each voltage is unidirectional mode, lower curve is bidirectional mode) 0 25 50 75 100 125 150 175 300 250 200 150 100 50 0 figure 4. steady state power derating curve p d , power dissipation (mw) temperature ( c) fr-5 board alumina substrate 01 23 320 280 240 160 120 40 0 c, capacitance (pf) bias (v) 200 80 15 v 5.6 v
mmbz5v6alt1 series http://onsemi.com 144 typical characteristics p 0.1 1 10 100 1000 1 10 100 power is defined as v rsm x i z (pk) where v rsm is the clamping voltage at i z (pk). pw, pulse width (ms) unidirectional rectangular waveform, t a = 25 c bidirectional pk peak surge power (w) mmbz5v6alt1 figure 5. pulse waveform value (%) 100 50 0 01 2 34 t, time (ms) figure 6. pulse derating curve pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . half value- i pp 2 t p t r 10 s peak value-i pp 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 t a , ambient temperature ( c) figure 7. maximum nonrepetitive surge power, p pk versus pw peak pulse derating in % of peak power or current @ t a = 25 c figure 8. maximum nonrepetitive surge power, p pk (nom) versus pw 0.1 1 10 100 1000 1 10 100 pw, pulse width (ms) p pk peak surge power (w) unidirectional rectangular waveform, t a = 25 c bidirectional mmbz5v6alt1 power is defined as v z (nom) x i z (pk) where v z (nom) is the nominal zener voltage measured at the low test current used for voltage classification. unidirectional
mmbz5v6alt1 series http://onsemi.com 145 typical common anode applications a quad junction common anode design in a sot23 package protects four separate lines using only one package. this adds flexibility and creativity to pcb design especially when board space is at a premium. two simplified examples of tvs applications are illustrated below. mmbz5v6alt1 thru mmbz33valt1 keyboard terminal printer etc. functional decoder i/o a mmbz5v6alt1 thru mmbz33valt1 gnd computer interface protection b c d microprocessor protection i/o ram rom clock cpu control bus address bus data bus gnd v gg v dd mmbz5v6alt1 thru mmbz33valt1 soldering precautions
? semiconductor components industries, llc, 2001 april, 2001 rev. 5 146 publication order number: mmbz15vdlt1/d mmbz15vdlt1, mmbz27vclt1 preferred devices 40 watt peak power zener transient voltage suppressors sot23 dual common cathode zeners for esd protection these dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. they are intended for use in voltage and esd sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. their dual junction common cathode design protects two separate lines using only one package. these devices are ideal for situations where board space is at a premium. specification features: ? sot23 package allows either two separate unidirectional configurations or a single bidirectional configuration ? working peak reverse voltage range 12.8 v, 22 v ? standard zener breakdown voltage range 15 v, 27 v ? peak power 40 watts @ 1.0 ms (bidirectional), per figure 5. waveform ? esd rating of class n (exceeding 16 kv) per the human body model ? maximum clamping voltage @ peak pulse current ? low leakage < 100 na ? flammability rating ul 94vo mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic case finish: corrosion resistant finish, easily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds package designed for optimal automated board assembly small package size for high density applications available in 8 mm tape and reel use the device number to order the 7 inch/3,000 unit reel. replace the at1o with at3o in the device number to order the 13 inch/10,000 unit reel. preferred devices are recommended choices for future use and best overall value. sot23 case 318 style 9 http://onsemi.com 1 3 2 1 2 3 pin 1. anode 2. anode 3. cathode device package shipping ordering information mmbz15vdlt1 sot23 3000/tape & reel mmbz15vdlt3 sot23 10,000/tape & reel mmbz27vclt1 sot23 3000/tape & reel xxx marking diagram xxx = 15d or 27c m = date code m
unidirectional tvs i pp i f v i i r i t v rwm v c v br v f mmbz15vdlt1, mmbz27vclt1 http://onsemi.com 147 maximum ratings rating symbol value unit peak power dissipation @ 1.0 ms (note 1.) @ t l 25 c p pk 40 watts total power dissipation on fr5 board (note 2.) @ t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance junction to ambient r q ja 556 c/w total power dissipation on alumina substrate (note 3.) @ t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance junction to ambient r q ja 417 c/w junction and storage temperature range t j , t stg 55 to +150 c lead solder temperature maximum (10 second duration) t l 230 c 1. nonrepetitive current pulse per figure 5. and derate above t a = 25 c per figure 6. 2. fr5 = 1.0 x 0.75 x 0.62 in. 3. alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina electrical characteristics (t a = 25 c unless otherwise noted) unidirectional (circuit tied to pins 1 and 3 or 2 and 3) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current v br maximum temperature coefficient of v br i f forward current v f forward voltage @ i f
mmbz15vdlt1, mmbz27vclt1 http://onsemi.com 148 electrical characteristics (t a = 25 c unless otherwise noted) unidirectional (circuit tied to pins 1 and 3 or pins 2 and 3) (v f = 0.9 v max @ i f = 10 ma) breakdown voltage v c @ i pp (note 5.) device v rwm i r @ v rwm v br (note 4.) (v) @ i t v c i pp v br device device marking volts na min nom max ma v a mv/ c mmbz15vdlt1 15d 12.8 100 14.3 15 15.8 1.0 21.2 1.9 12 (v f = 1.1 v max @ i f = 200 ma) breakdown voltage v c @ i pp (note 5.) device v rwm i r @ v rwm v br (note 4.) (v) @ i t v c i pp v br device device marking volts na min nom max ma v a mv/ c mmbz27vclt1 27c 22 50 25.65 27 28.35 1.0 38 1.0 26 4. v br measured at pulse test current i t at an ambient temperature of 25 c. 5. surge current waveform per figure 5. and derate per figure 6. -40 +85 17 breakdown voltage (volts) figure 1. typical breakdown voltage versus temperature temperature ( c) +125 16 15 14 13 (v br @ i t ) +25 mmbz15vdlt1 -55 +85 29 breakdown voltage (volts) figure 2. typical breakdown voltage versus temperature temperature ( c) +125 28 27 26 25 (v br @ i t ) +25 mmbz27vclt1 typical characteristics bidirectional unidirectional bidirectional
mmbz15vdlt1, mmbz27vclt1 http://onsemi.com 149 10000 10 0.01 temperature ( c) i r (na) figure 3. typical leakage current versus temperature 100 1 0.1 -40 +85 +125 +25 0 25 50 75 100 125 150 175 300 250 200 150 100 50 0 figure 4. steady state power derating curve p d , power dissipation (mw) temperature ( c) fr-5 board alumina substrate value (%) 100 50 0 01234 t, time (ms) figure 5. pulse waveform t r 10 s pulse width (t p ) is defined as that point where the peak current decays to 50% of i pp . half value i pp 2 peak value i pp t p 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 t a , ambient temperature ( c) figure 6. pulse derating curve peak pulse derating in % of peak power or current @ t a = 25 c soldering precautions
? semiconductor components industries, llc, 2001 march, 2001 rev. 4 150 publication order number: mmqa5v6t1/d mmqa5v6t1 series 24 watt peak power zener transient voltage suppressors sc59 quad common anode for zeners esd protection these quad monolithic silicon voltage suppressors are designed for applications requiring transient voltage protection capability. they are intended for use in voltage and esd sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. their quad junction common anode design protects four separate lines using only one package. these devices are ideal for situations where board space is at a premium. specification features: ? sc59 package allows four separate unidirectional configurations ? working peak reverse voltage range 3.0 v to 2.5 v ? standard zener breakdown voltage range 5.6 v to 33 v ? peak power minimum 24 w @ 1 ms (unidirectional), per figure 5 ? peak power minimum 150 w @ 20 s (unidirectional), per figure 6 ? esd rating of class 3 (> 16 kv) per human body model ? maximum clamp voltage @ peak pulse current ? package designed for optimal automated board assembly ? small package size for high density applications ? low leakage < 2.0 a mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds maximum ratings rating symbol value unit peak power dissipation (note 1.) @ 1.0 ms @ t l 25 c p pk 24 w peak power dissipation (note 2.) @ 20 s @ t l 25 c p pk 150 w total power dissipation (note 3.) @ t a = 25 c derate above 25 c thermal resistance junction to ambient p d r ja 225 1.8 556 mw mw/ c c/w total power dissipation (note 4.) @ t a = 25 c derate above 25 c thermal resistance junction to ambient p d r ja 300 2.4 417 mw mw/ c c/w junction and storage temperature range t j , t stg 55 to +150 c 1. nonrepetitive current pulse per figure 5 and derated above t a = 25 c per figure 4 2. nonrepetitive current pulse per figure 6 and derated above t a = 25 c per figure 4 3. fr5 board = 1.0 x 0.75 x 0.62 in. 4. alumina substrate = 0.4 x 0.3 x 0.024 in., 99.5% alumina device package shipping ordering information mmqaxxxt1 sc59 3000/tape & reel http://onsemi.com 2the at1o suffix refers to an 8 mm, 7 inch reel. the at3o suffix refers to an 8 mm, 13 inch reel. mmqaxxxt3 sc59 10,000/tape & reel 1 2 3 4 5 6 pin 1. cathode 2. anode 3. cathode 4. cathode 5. anode 6. cathode 1 2 3 6 5 4 xxx = device code = (see table next page) m = date code marking diagram xxx pin assignment m sc59 case 318f style 1
unidirectional tvs i pp i f v i i r i t v rwm v c v br v f mmqa5v6t1 series http://onsemi.com 151 electrical characteristics (t a = 25 c unless otherwise noted, v f = 0.9 v max. @ i f (note 5.) = 10 ma) unidirectional (circuit tied to pins 1, 2 and 5; pins 2, 3 and 5; or 2, 4 and 6; or pins 2, 5 and 6) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm z zt maximum zener impedance @ i zt v br breakdown voltage @ i t i t test current v br maximum temperature coefficient of v br i f forward current v f forward voltage @ i f electrical characteristics i r @ breakdown voltage z zt (note 6 ) v c @ i pp (note 7.) device v rwm i r @ v rwm v br (note 5.) (volts) @ i t z zt (n o t e 6 . ) @ i zt v c i pp v br device d ev i ce marking volts na min nom max ma ma volts amps mw/ c mmqa5v6t1 5a6 3.0 2000 5.32 5.6 5.88 1.0 400 1.0 8.0 3.0 1.26 mmqa6v2t1 6a2 4.0 700 5.89 6.2 6.51 1.0 300 1.0 9.0 2.66 10.6 mmqa6v8t1 6a8 4.3 500 6.46 6.8 7.14 1.0 300 1.0 9.8 2.45 10.9 mmqa12vt1 12a 9.1 75 11.4 12 12.6 1.0 80 1.0 17.3 1.39 14 mmqa13vt1 13a 9.8 75 12.35 13 13.65 1.0 80 1.0 18.6 1.29 15 mmqa15vt1 15a 11 75 14.25 15 15.75 1.0 80 1.0 21.7 1.1 16 mmqa18vt1 18a 14 75 17.1 18 18.9 1.0 80 1.0 26 0.923 19 mmqa20vt1 20a 15 75 19.0 20 21.0 1.0 80 1.0 28.6 0.84 20.1 mmqa21vt1 21a 16 75 19.95 21 22.05 1.0 80 1.0 30.3 0.792 21 mmqa22vt1 22a 17 75 20.9 22 23.1 1.0 80 1.0 31.7 0.758 22 mmqa24vt1 24a 18 75 22.8 24 25.2 1.0 100 1.0 34.6 0.694 25 mmqa27vt1 27a 21 75 25.65 27 28.35 1.0 125 1.0 39.0 0.615 28 mmqa30vt1 30a 23 75 28.5 30 31.5 1.0 150 1.0 43.3 0.554 32 mmqa33vt1 33a 25 75 31.35 33 34.65 1.0 200 1.0 48.6 0.504 37 5. v br measured at pulse test current i t at an ambient temperature of 25 c 6. z zt is measured by dividing the ac voltage drop across the device by the ac current supplied. the specified limits are i z (ac) = 0.1 i z (dc) with the ac frequency = 1.0 khz 7. surge current waveform per figure 5 and derate per figure 4
mmqa5v6t1 series http://onsemi.com 152 typical characteristics 300 v z , nominal zener voltage (v) c, capacitance (pf) 250 200 150 100 50 0 5.6 6.8 12 20 27 biased at 0 v biased at 1 v biased at 50% of v z nom figure 1. typical capacitance 5.6 6.8 20 27 10,000 1,000 100 10 0 figure 2. typical leakage current i r , leakage (na) v z , nominal zener voltage (v) 33 33 +150 c +25 c -40 c figure 3. steady state power derating curve figure 4. pulse derating curve 0 25 50 75 100 125 150 175 300 250 200 150 100 50 0 p d , power dissipation (mw) t a , ambient temperature ( c) fr5 board alumina substrate 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 t a , ambient temperature ( c) peak pulse derating in % of peak power or current @ t a = 25 c
mmqa5v6t1 series http://onsemi.com 153 typical characteristics figure 5. 10 1000 s pulse waveform value (%) 100 50 0 01234 t, time (ms) t r t p pulse width (t p ) is defined as that point where the peak current decays to 50% of i rsm . t r 10 m s half value i rsm 2 peak value i rsm figure 6. 8 20 s pulse waveform figure 7. maximum nonrepetitive surge power, ppk versus pw figure 8. typical maximum nonrepetitive surge power, ppk versus v br ppk peak surge power (w) 0.1 1.0 10 100 1000 1.0 10 100 power is defined as v rsm x i z (pk) where v rsm is the clamping voltage at i z (pk). pw, pulse width (ms) unidirectional rectangular waveform, ta = 25 c 100 90 80 70 60 50 40 30 20 10 0 020406080 t, time ( s) % of peak pulse current 200 180 160 140 120 100 80 60 40 20 0 5.6 6.8 12 20 33 nominal v z p t p t r pulse width (t p ) is defined as that point where the peak current decay = 8 s peak value i rsm @ 8 s half value i rsm /2 @ 20 s 27 , peak surge power (w) pk 8 20 waveform as per figure 6 10 100 waveform as per figure 5
mmqa5v6t1 series http://onsemi.com 154 typical common anode applications a quad junction common anode design in a sc-74 package protects four separate lines using only one package. this adds flexibility and creativity to pcb design especially when board space is at a premium. a simplified example of mmqa series device applications is illustrated below. keyboard terminal printer etc. functional decoder i/o a mmqa series device gnd computer interface protection b c d microprocessor protection i/o ram rom clock cpu control bus address bus data bus gnd v gg v dd mmqa series device
? semiconductor components industries, llc, 2001 march, 2001 rev. 1 155 publication order number: msqa6v1w5t2/d msqa6v1w5t2 quad array for esd protection this quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. it is intended for use in voltage and esd sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. its quad junction common anode design protects four separate lines using only one package. these devices are ideal for situations where board space is at a premium. specification features ? sc88a package allows four separate unidirectional configurations ? low leakage < 1 a @ 3 volt ? breakdown voltage: 6.1 volt 7.2 volt @ 1 ma ? low capacitance (90 pf typical) ? esd protection meeting iec100042 mechanical characteristics ? void free, transfermolded, thermosetting plastic case ? corrosion resistant finish, easily solderable ? package designed for optimal automated board assembly ? small package size for high density applications sc88a/sot323 case 419a http://onsemi.com 5 4 1 2 3 device package shipping ordering information msqa6v1w5t2 sc88a 3000/tape & reel 61 = device marking d = one digit date code 61 d marking diagram 13 2 45 note: t2 suffix devices are packaged with pin 1 note: opposing sprocket hole.
msqa6v1w5t2 http://onsemi.com 156 maximum ratings (t a = 25 c unless otherwise noted) characteristic symbol value unit peak power dissipation @ 20 s @t a 25 c (note 1.) p pk 150 watts steady state power 1 diode (note 2.) p d 385 mw thermal resistance junction to ambient above 25 c, derate r ja 325 3.1 c/w mw/ c maximum junction temperature t jmax 150 c operating junction and storage temperature range t j t stg 55 to +150 c esd discharge mil std 883c method 30156 iec100042, air discharge iec100042, contact discharge v pp 16 16 9 kv lead solder temperature (10 seconds duration) t l 260 c electrical characteristics breakdown voltage v br @ 1 ma (volts) leakage current i rm @ v rm = 3 v capacitance @ 0 v bias max v f @ i f = 200 ma device min nom max ( a) (pf) (v) msqa6v1w5 6.1 6.6 7.2 1.0 90 1.25 1. nonrepetitive current per figure 1. derate per figure 2. 2. only 1 diode under power. for all 4 diodes under power, p d will be 25%. mounted on fr4 board with min pad. figure 1. pulse width figure 2. 8 20 s pulse waveform p 100 10 1 1 10 100 1000 t, time ( s) 1000 , peak surge power (watts) pk note: nonrepetitive surge. 100 90 80 70 60 50 40 30 20 10 0 020406080 t, time ( s) % of peak pulse current t p t r pulse width (t p ) is defined as that point where the peak current decay = 8 s peak value i rsm @ 8 s half value i rsm /2 @ 20 s
msqa6v1w5t2 http://onsemi.com 157 figure 3. pulse derating curve figure 4. capacitance figure 5. forward voltage figure 6. clamping voltage versus peak pulse current (reverse direction) 0.6 0.7 0.8 0.9 0.001 0.01 1.0 v f , forward voltage (volts) 100 90 80 70 60 50 40 30 20 10 0 0 1.0 3.0 5.0 bias voltage (volts) typical capacitance (pf) 100 10 1.0 0 5.0 10 20 30 v c , clamping voltage (volts) i 25 , peak pulse current (amps) pp 4.0 2.0 1 mhz frequency 1.0 1.1 1.2 0.1 i , forward current (a) f 15 2.5 s square wave 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 t a , ambient temperature ( c) or current @ t a = 25 c figure 7. clamping voltage versus peak pulse current (forward direction) 100 10 0.1 0 2.0 4.0 8.0 12 v c , forward clamping voltage (volts) i 10 , peak forward pulse current (amps) pp 6.0 2.5 s square wave 1.0
? semiconductor components industries, llc, 2001 may, 2001 rev. 0 158 publication order number: df6a6.8fut1/d df6a6.8fut1 quad array for esd protection this quad voltage suppressor is designed for applications requiring transient overvoltage protection capability. it is intended for use in voltage and esd sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. its quad junction common anode design protects four separate lines using only one package. these devices are ideal for situations where board space is at a premium. specification features ? sc88 package allows four separate unidirectional configurations ? low leakage < 1 a @ 5 volt ? breakdown voltage: 6.4 7.2 volt @ 5 ma ? low capacitance (40 pf typical) ? esd protection meeting 6100042 level 4 and 16 kv human body model mechanical characteristics ? void free, transfermolded, thermosetting plastic case ? corrosion resistant finish, easily solderable ? package designed for optimal automated board assembly ? small package size for high density applications maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit peak power dissipation @ 8 x 20 s (note 1) p pk 75 watts steady state power dissipation (note 2) p d 385 mw thermal resistance junction to ambient derate above 25 c r ja 328 3.0 c/w mw/ c maximum junction temperature t jmax 150 c operating junction and storage temperature range t j , t stg 55 to +150 c esd discharge mil std 883c method 30156 iec6100042, air discharge iec6100042, contact discharge v pp 16 16 8 kv lead solder temperature (10 seconds duration) t l 260 c 1. per waveform figure 1 2. mounted on fr5 board = 1.0 x 0.75 x 0.062 in. sc88 case 419b plastic http://onsemi.com 6 4 1 3 device package shipping ordering information df6a6.8fut1 sc88 3000/tape & reel 68 = device marking d = one digit date code = pin 1 indicator marking diagram 13 2 64 68 d 5 5 2
df6a6.8fut1 http://onsemi.com 159 vi curve i f v i i r i t v rwm v br v f electrical characteristics device breakdown voltage v br @ 5 ma (volts) leakage current i rm @ v rwm = 5 v typical capacitance @ 0 v bias max v f @ i f = 10 ma max z z @ 5 ma max z zk @ 0.5 ma device d ev i ce marking min nom max ( a) (pf) (v) ( ) ( ) df6a6.8fut1 68 6.4 6.8 7.2 1.0 40 1.25 30 300 figure 1. 8 20 s pulse waveform 100 90 80 70 60 50 40 30 20 10 0 020406080 t, time ( s) % of peak pulse current t p t r pulse width (t p ) is defined as that point where the peak current decay = 8 s peak value i rsm @ 8 s half value i rsm /2 @ 20 s figure 2. capacitance 45 40 35 30 50 25 15 20 10 01 3 5 bias voltage (volts) typical capacitance (pf) 4 2 1 mhz frequency figure 3. forward voltage figure 4. clamping voltage versus peak pulse current 0.6 0.7 0.8 0.9 v f , forward voltage (volts) 10 1 8 9 10 12 v c , clamping voltage (volts) i , peak pulse current (amps) pp 1.0 1.1 1.2 i , forward current (a) f 11 8 x 20 s per figure 1 0.0001 0.01 0.1 1 0.001
? semiconductor components industries, llc, 2001 march, 2001 rev. 2 160 publication order number: sms05t1/d sms05t1 sc-74 quad transient voltage suppressor for esd protection this quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. it is intended for use in voltage and esd sensitive equipment such as computers, printers, business machines, communication systems and other applications. this quad device provides superior surge protection over current quad zener mmqa series by providing up to 350 watts peak power. features: ? sc-74 package allows four separate unidirectional configurations ? peak power 350 watts, 8 x 20 s ? esd rating of class n (exceeding 25 kv) per the human body model ? esd rating: iec 6100042 (esd) 15 kv (air) 8 kv (contact) iec 6100044 (eft) 40 amps (5/50 ns) iec 6100045 (lighting) 23 amps (8/20 s) ? ul flammability rating of 94v0 typical applications: ? hand held portable applications such as cell phones, pagers, notebooks and notebook computers maximum ratings rating symbol value unit peak power dissipation 8 x 20 s @ t a = 25 c (note 1.) p pk 350 w total power dissipation on fr5 board @ t a = 25 c (note 2.) derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junctiontoambient r ja 556 c/w junction and storage temperature range t j , t stg 55 to +150 c lead solder temperature maximum 10 seconds duration t l 260 c 1. nonrepetitive current pulse 8 x 20 s exponential decay waveform 2. fr5 = 1.0 x 0.75 x 0.62 in. sc74 quad transient voltage suppressor 350 watts peak power 5 volts sc74 case 318f style 1 http://onsemi.com 1 2 3 4 5 6 1 2 3 6 5 4 xxx = device code d = date code marking diagram pin assignment device package shipping ordering information sms05t1 sc74 3000/tape & reel sms05t3 sc74 10,000/tape & reel xxx d pin 1. cathode 2. anode 3. cathode 4. cathode 5. anode 6. cathode
sms05t1 http://onsemi.com 161 i pp v i i r i t v rwm v c v br electrical characteristics characteristic symbol min typ max unit reverse breakdown voltage @ i t = 1.0 ma v br 6.0 7.2 v reverse leakage current @ v rwn = 5.0 volts i r n/a 20 a maximum clamping voltage @ i pp = 5.0 a, 8 x 20 s v c n/a 9.8 v maximum clamping voltage @ i pp = 23 a, 8 x 20 s v c n/a 15.5 v between i/o pins and ground @ v r = 0 volts, 1.0 mhz capacitance 250 300 400 pf figure 1. nonrepetitive peak pulse power versus pulse time t p , pulse duration ( s) 10 1 0.1 1000 100 10 1 0.1 figure 2. power derating curve t a , ambient temperature ( c) 150 125 100 75 50 25 0 90 80 70 60 50 40 30 20 10 0 0.01 100 110 p pp , peak pulse power (kw) % of rated power or i pp
sms05t1 http://onsemi.com 162 figure 3. pulse waveform t, time ( s) 30 15 10 5 0 figure 4. clamping voltage versus peak pulse current i pp , peak pulse current (a) 25 20 15 10 5 0 12 10 8 6 4 2 0 14 20 percent of i pp v c , clamping voltage (v) figure 5. 8 x 20 s v f i f , forward current (a) 5 3 1 10 5 0 figure 6. typical capacitance v r , reverse voltage (v) 6 5 4 3 2 1 0 150 100 50 0 0 200 250 v f , forward voltage (v) c, capacitance (pf) 25 20 90 80 70 60 50 40 30 20 10 0 100 110 waveform parameters t r = 8 s t d = 20 s t d = i pp /2 4 20 15 pulse waveform t r = 8 s t d = 20 s waveform parameters t r = 8 s t d = 20 s 16 18 8 x 20 s surge 2 350 300 400 t j = 25 c ct 8 x 20 s surge
http://onsemi.com 163 chapter 6 zener voltage regulator diodes axial leaded data sheets
http://onsemi.com 164
? semiconductor components industries, llc, 2001 may, 2001 rev. 1 165 publication order number: 1n4370a/d 1n4370a series 500 mw do-35 hermetically sealed glass zener voltage regulators this is a complete series of 500 mw zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of siliconoxide passivated junctions. all this in an axiallead hermetically sealed glass package that offers protection in all common environmental conditions. specification features: ? zener voltage range 2.4 v to 12 v ? esd rating of class 3 (>16 kv) per human body model ? do204ah (do35) package smaller than conventional do204aa package ? double slug type construction ? metallurgical bonded construction mechanical characteristics: case: double slug type, hermetically sealed glass finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 230 c, 1/16 from the case for 10 seconds polarity: cathode indicated by polarity band mounting position: any maximum ratings (note 1.) rating symbol value unit max. steady state power dissipation @ t l 75 c, lead length = 3/8 derate above 75 c p d 500 4.0 mw mw/ c operating and storage temperature range t j , t stg 65 to +200 c 1. some part number series have lower jedec registered ratings. devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. device package shipping ordering information 1nxxxxa axial lead 3000 units/box 1nxxxxarl axial lead axial lead case 299 glass http://onsemi.com 5000/tape & reel cathode anode 1nxxxxarl2 * axial lead 5000/tape & reel 1nxxxxara1 axial lead 3000/ammo pack 1nxxxxata axial lead 5000/ammo pack * the a2o suffix refers to 26 mm tape spacing. polarity band up with cathode lead off first polarity band down with cathode lead off first l 1n xx xxa yww l = assembly location 1nxxxxa = device code = (see table next page) y = year ww = work week 1nxxxxata2 * axial lead 5000/tape & reel 1nxxxxarr1 axial lead 3000/tape & reel 1nxxxxarr2 axial lead 3000/tape & reel marking diagram
zener voltage regulator i f v i i r i zt v r v z v f 1n4370a series http://onsemi.com 166 electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.5 v max @ i f = 200 ma for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zm maximum dc zener current i r reverse leakage current @ v r v r reverse voltage i f forward current v f forward voltage @ i f electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.5 v max @ i f = 200 ma for all types) zener voltage (note 3.) z zt (note 4 ) i r @ v r = 1 v device device v z (volts) @ i zt z zt (n o t e 4 . ) @ i zt i zm (note 5.) t a = 25 c t a = 150 c d ev i ce (note 2.) d ev i ce marking min nom max (ma) ( ) (ma) ( m a) ( m a) 1n4370a 1n4370a 2.28 2.4 2.52 20 30 150 100 200 1n4371a 1n4371a 2.57 2.7 2.84 20 30 135 75 150 1n4372a 1n4372a 2.85 3.0 3.15 20 29 120 50 100 1n746a 1n746a 3.14 3.3 3.47 20 28 110 10 30 1n747a 1n747a 3.42 3.6 3.78 20 24 100 10 30 1n748a 1n748a 3.71 3.9 4.10 20 23 95 10 30 1n749a 1n749a 4.09 4.3 4.52 20 22 85 2 30 1n750a 1n750a 4.47 4.7 4.94 20 19 75 2 30 1n751a 1n751a 4.85 5.1 5.36 20 17 70 1 20 1n752a 1n752a 5.32 5.6 5.88 20 11 65 1 20 1n753a 1n753a 5.89 6.2 6.51 20 7 60 0.1 20 1n754a 1n754a 6.46 6.8 7.14 20 5 55 0.1 20 1n755a 1n755a 7.13 7.5 7.88 20 6 50 0.1 20 1n756a 1n756a 7.79 8.2 8.61 20 8 45 0.1 20 1n757a 1n757a 8.65 9.1 9.56 20 10 40 0.1 20 1n758a 1n758a 9.50 10 10.5 20 17 35 0.1 20 1n759a 1n759a 11.40 12 12.6 20 30 30 0.1 20 2. tolerance and type number designation (v z ) the type numbers listed have a standard tolerance on the nominal zener voltage of 5%. 3. zener voltage (v z ) measurement nominal zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (t l ) at 30 c 1 c and 3/8 lead length. 4. zener impedance (z z ) derivation z zt and z zk are measured by dividing the ac voltage drop across the device by the ac current applied. the specified limits are for i z(ac) = 0.1 i z(dc) with the ac frequency = 60 hz. 5. maximum zener current ratings (i zm ) values shown are based on the jedec rating of 400 mw where the actual zener voltage (v z ) is known at the operating point, the maximum zener current may be increased and is limited by the derating curve.
1n4370a series http://onsemi.com 167 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 180 200 t l , lead temperature ( c) figure 1. steady state power derating heat sinks 3/8" 3/8" p d , maximum steady state power dissipation (watts)
1n4370a series http://onsemi.com 168 application note e zener voltage since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. the following procedure is recommended: lead temperature, t l , should be determined from: t l = q la p d + t a . q la is the lead-to-ambient thermal resistance ( c/w) and p d is the power dissipation. the value for q la will vary and depends on the device mounting method. q la is generally 30 to 40 c/w for the various clips and tie points in common use and for printed circuit board wiring. the temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. the thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. using the measured value of t l , the junction temperature may be determined by: t j = t l + d t jl . d t jl is the increase in junction temperature above the lead temperature and may be found from figure 2 for dc power: d t jl = q jl p d . for worst-case design, using expected limits of i z , limits of p d and the extremes of t j ( d t j ) may be estimated. changes in voltage, v z , can then be found from: d v = q vz t j . q vz , the zener voltage temperature coefficient, is found from figures 4 and 5. under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. for best regulation, keep current excursions as low as possible. surge limitations are given in figure 7. they are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots, resulting in device degradation should the limits of figure 7 be exceeded. ll 500 400 300 200 100 0 0 0.2 0.4 0.6 0.8 1 2.4-60v 62-200v l, lead length to heat sink (inch) jl , junctiontolead thermal resistance ( c/w) q figure 2. typical thermal resistance typical leakage current at 80% of nominal breakdown voltage +25 c +125 c 1000 7000 5000 2000 1000 700 500 200 100 70 50 20 10 7 5 2 1 0.7 0.5 0.2 0.1 0.07 0.05 0.02 0.01 0.007 0.005 0.002 0.001 3 4 5 6 7 8 910 1112131415 v z , nominal zener voltage (volts) i , leakage current ( a) m r figure 3. typical leakage current
1n4370a series http://onsemi.com 169 +12 +10 +8 +6 +4 +2 0 -2 -4 2345 678 9101112 v z , zener voltage (volts) figure 4a. range for units to 12 volts v z @i zt (note 2) range temperature coefficients (55 c to +150 c temperature range; 90% of the units are in the ranges indicated.) 100 70 50 30 20 10 7 5 3 2 1 2 3 4 5 6 7 8 9 10 11 12 10 20 30 50 70 100 v z , zener voltage (volts) figure 4b. range for units 12 to 100 volts range v z @i z (note 2) 120 130 140 150 160 170 180 190 200 200 180 160 140 120 100 v z , zener voltage (volts) figure 4c. range for units 120 to 200 volts v z @i zt (note 2) +6 +4 +2 0 -2 -4 3 4 56 78 v z , zener voltage (volts) figure 5. effect of zener current note: below 3 volts and above 8 volts note: changes in zener current do not note: affect temperature coefficients 1ma 0.01ma v z @i z t a =25 c 1000 c, capacitance (pf) 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 v z , zener voltage (volts) figure 6a. typical capacitance 2.4100 volts t a =25 c 0v bias 1v bias 50% of v z bias 100 70 50 30 20 10 7 5 3 2 1 120 140 160 180 190 200 220 v z , zener voltage (volts) figure 6b. typical capacitance 120200 volts t a =25 c 1voltbias 50% of v z bias 0 bias q v z , temperature coefficient (mv/ c) 20ma c, capacitance (pf) q v z , temperature coefficient (mv/ c) q v z , temperature coefficient (mv/ c) q v z , temperature coefficient (mv/ c)
1n4370a series http://onsemi.com 170 100 70 50 30 20 10 7 5 3 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 p pk , peak surge power (watts) pw, pulse width (ms) 5% duty cycle 10% duty cycle 20% duty cycle 11v-91v nonrepetitive 1.8v-10v nonrepetitive rectangular waveform t j =25 c prior to initial pulse figure 7a. maximum surge power 1.891 volts 1000 700 500 300 200 100 70 50 30 20 10 7 5 3 2 1 0.01 0.1 1 10 100 1000 p pk , peak surge power (watts) pw, pulse width (ms) figure 7b. maximum surge power do-204ah 100200 volts 1000 500 200 100 50 20 10 1 2 5 0.1 0.2 0.5 1 2 5 10 20 50 100 i z , zener current (ma) figure 8. effect of zener current on zener impedance z z , dynamic impedance (ohms) z z , dynamic impedance (ohms) 1000 700 500 200 100 70 50 20 10 7 5 2 1 1 2 3 5 7 10 20 30 50 70 100 v z , zener voltage (volts) figure 9. effect of zener voltage on zener impedance figure 10. typical forward characteristics rectangular waveform, t j =25 c 100-200volts nonrepetitive t j =25 c i z (rms)=0.1 i z (dc) f=60hz i z =1ma 5ma 20ma t j =25 c i z (rms)=0.1 i z (dc) f=60hz v z =2.7v 47v 27v 6.2v v f , forward voltage (volts) 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1000 500 200 100 50 20 10 5 2 1 i f , forward current (ma) minimum maximum 150 c 75 c 0 c 25 c
1n4370a series http://onsemi.com 171 figure 11. zener voltage versus zener current e v z = 1 thru 16 volts v z , zener voltage (volts) i z , zener current (ma) 20 10 1 0.1 0.01 1 2 34 56 7 8 910111213141516 t a =25 figure 12. zener voltage versus zener current e v z = 15 thru 30 volts v z , zener voltage (volts) 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 10 1 0.1 0.01 t a =25 i z , zener current (ma)
1n4370a series http://onsemi.com 172 figure 13. zener voltage versus zener current e v z = 30 thru 105 volts v z , zener voltage (volts) 10 1 0.1 0.01 30 35 40 45 50 55 60 70 75 80 85 90 95 100 figure 14. zener voltage versus zener current e v z = 110 thru 220 volts v z , zener voltage (volts) 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260 10 1 0.1 0.01 t a =25 65 105 i z , zener current (ma) i z , zener current (ma)
? semiconductor components industries, llc, 2001 may, 2001 rev. 1 173 publication order number: 1n957b/d 1n957b series 500 mw do-35 hermetically sealed glass zener voltage regulators this is a complete series of 500 mw zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of siliconoxide passivated junctions. all this in an axiallead hermetically sealed glass package that offers protection in all common environmental conditions. specification features: ? zener voltage range 6.8 v to 75 v ? esd rating of class 3 (>16 kv) per human body model ? do204ah (do35) package smaller than conventional do204aa package ? double slug type construction ? metallurgical bonded construction mechanical characteristics: case: double slug type, hermetically sealed glass finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 230 c, 1/16 from the case for 10 seconds polarity: cathode indicated by polarity band mounting position: any maximum ratings (note 1.) rating symbol value unit max. steady state power dissipation @ t l 75 c, lead length = 3/8 derate above 75 c p d 500 4.0 mw mw/ c operating and storage temperature range t j , t stg 65 to +200 c 1. some part number series have lower jedec registered ratings. device package shipping ordering information 1n9xxb axial lead 3000 units/box 1n9xxbrl axial lead axial lead case 299 glass http://onsemi.com 5000/tape & reel cathode anode 1n9xxbrl2 * axial lead 5000/tape & reel 1n9xxbra1 axial lead 3000/ammo pack 1n9xxbta axial lead 5000/ammo pack * the a2o suffix refers to 26 mm tape spacing. polarity band up with cathode lead off first polarity band down with cathode lead off first l 1n 9x xb yww l = assembly location 1n9xxb = device code = (see table next page) y = year ww = work week 1n9xxbta2 * axial lead 5000/tape & reel 1n9xxbrr1 axial lead 3000/tape & reel 1n9xxbrr2 axial lead 3000/tape & reel marking diagram
zener voltage regulator i f v i i r i zt v r v z v f 1n957b series http://onsemi.com 174 electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.5 v max @ i f = 200 ma for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r breakdown voltage i f forward current v f forward voltage @ i f i zm maximum dc zener current electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.5 v max @ i f = 200 ma for all types) zener voltage (note 3.) zener impedance (note 4.) leakage current i zm device device v z (volts) @ i zt z zt @ i zt z zk @ i zk i r @ v r i zm (note 5.) d ev i ce (note 2.) d ev i ce marking min nom max ma ma m a volts ma 1n957b 1n957b 6.46 6.8 7.14 18.5 4.5 700 1.0 150 5.2 47 1n958b 1n958b 7.125 7.5 7.875 16.5 5.5 700 0.5 75 5.7 42 1n959b 1n959b 7.79 8.2 8.61 15 6.5 700 0.5 50 6.2 38 1n960b 1n960b 8.645 9.1 9.555 14 7.5 700 0.5 25 6.9 35 1n961b 1n961b 9.5 10 10.5 12.5 8.5 700 0.25 10 7.6 32 1n962b 1n962b 10.45 11 11.55 11.5 9.5 700 0.25 5 8.4 28 1n963b 1n963b 11.4 12 12.6 10.5 11.5 700 0.25 5 9.1 26 1n964b 1n964b 12.35 13 13.65 9.5 13 700 0.25 5 9.9 24 1n965b 1n965b 14.25 15 15.75 8.5 16 700 0.25 5 11.4 21 1n966b 1n966b 15.2 16 16.8 7.8 17 700 0.25 5 12.2 19 1n967b 1n967b 17.1 18 18.9 7.0 21 750 0.25 5 13.7 17 1n968b 1n968b 19 20 21 6.2 25 750 0.25 5 15.2 15 1n969b 1n969b 20.9 22 23.1 5.6 29 750 0.25 5 16.7 14 1n970b 1n970b 22.8 24 25.2 5.2 33 750 0.25 5 18.2 13 1n971b 1n971b 25.65 27 28.35 4.6 41 750 0.25 5 20.6 11 1n972b 1n972b 28.5 30 31.5 4.2 49 1000 0.25 5 22.8 10 1n973b 1n973b 31.35 33 34.65 3.8 58 1000 0.25 5 25.1 9.2 1n974b 1n974b 34.2 36 37.8 3.4 70 1000 0.25 5 27.4 8.5 1n975b 1n975b 37.05 39 40.95 3.2 80 1000 0.25 5 29.7 7.8 1n978b 1n978b 48.45 51 53.55 2.5 125 1500 0.25 5 38.8 5.9 1n979b 1n979b 53.2 56 58.8 2.2 150 2000 0.25 5 42.6 5.4 1n982b 1n982b 71.25 75 78.75 1.7 270 2000 0.25 5 56 4.1 2. tolerance and voltage designation tolerance designation device tolerance of 5% is indicated by a abo suffix. 3. zener voltage (v z ) measurement nominal zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (t l ) at 30 c 1 c and 3/8 lead length. 4. zener impedance (z z ) derivation z zt and z zk are measured by dividing the ac voltage drop across the device by the ac current applied. the specified limits are for i z(ac) = 0.1 i z(dc) with the ac frequency = 60 hz. 5. maximum zener current ratings (i zm ) values shown are based on the jedec rating of 400 mw where the actual zener voltage (v z ) is known at the operating point, the maximum zener current may be increased and is limited by the derating curve.
1n957b series http://onsemi.com 175 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 180 200 t l , lead temperature ( c) figure 1. steady state power derating heat sinks 3/8" 3/8" p d , steady state power dissipation (watts)
1n957b series http://onsemi.com 176 application note e zener voltage since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. the following procedure is recommended: lead temperature, t l , should be determined from: t l = q la p d + t a . q la is the lead-to-ambient thermal resistance ( c/w) and p d is the power dissipation. the value for q la will vary and depends on the device mounting method. q la is generally 30 to 40 c/w for the various clips and tie points in common use and for printed circuit board wiring. the temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. the thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. using the measured value of t l , the junction temperature may be determined by: t j = t l + d t jl . d t jl is the increase in junction temperature above the lead temperature and may be found from figure 2 for dc power: d t jl = q jl p d . for worst-case design, using expected limits of i z , limits of p d and the extremes of t j ( d t j ) may be estimated. changes in voltage, v z , can then be found from: d v = q vz t j . q vz , the zener voltage temperature coefficient, is found from figures 4 and 5. under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. for best regulation, keep current excursions as low as possible. surge limitations are given in figure 7. they are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots, resulting in device degradation should the limits of figure 7 be exceeded. ll 500 400 300 200 100 0 0 0.2 0.4 0.6 0.8 1 2.4-60v 62-200v l, lead length to heat sink (inch) jl , junctiontolead thermal resistance ( c/w) q figure 2. typical thermal resistance typical leakage current at 80% of nominal breakdown voltage +25 c +125 c 1000 7000 5000 2000 1000 700 500 200 100 70 50 20 10 7 5 2 1 0.7 0.5 0.2 0.1 0.07 0.05 0.02 0.01 0.007 0.005 0.002 0.001 3 4 5 6 7 8 910 1112131415 v z , nominal zener voltage (volts) i , leakage current ( a) m r figure 3. typical leakage current
1n957b series http://onsemi.com 177 +12 +10 +8 +6 +4 +2 0 -2 -4 2345 678 9101112 v z , zener voltage (volts) figure 4a. range for units to 12 volts v z @i zt (note 2) range temperature coefficients (55 c to +150 c temperature range; 90% of the units are in the ranges indicated.) 100 70 50 30 20 10 7 5 3 2 1 2 3 4 5 6 7 8 9 10 11 12 10 20 30 50 70 100 v z , zener voltage (volts) figure 4b. range for units 12 to 100 volts range v z @i z (note 2) 120 130 140 150 160 170 180 190 200 200 180 160 140 120 100 v z , zener voltage (volts) figure 4c. range for units 120 to 200 volts v z @i zt (note 2) +6 +4 +2 0 -2 -4 3 4 56 78 v z , zener voltage (volts) figure 5. effect of zener current note: below 3 volts and above 8 volts note: changes in zener current do not note: affect temperature coefficients 1ma 0.01ma v z @i z t a =25 c 1000 c, capacitance (pf) 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 v z , zener voltage (volts) figure 6a. typical capacitance 2.4100 volts t a =25 c 0v bias 1v bias 50% of v z bias 100 70 50 30 20 10 7 5 3 2 1 120 140 160 180 190 200 220 v z , zener voltage (volts) figure 6b. typical capacitance 120200 volts t a =25 c 1voltbias 50% of v z bias 0 bias q v z , temperature coefficient (mv/ c) 20ma c, capacitance (pf) q v z , temperature coefficient (mv/ c) q v z , temperature coefficient (mv/ c) q v z , temperature coefficient (mv/ c)
1n957b series http://onsemi.com 178 100 70 50 30 20 10 7 5 3 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 p pk , peak surge power (watts) pw, pulse width (ms) 5% duty cycle 10% duty cycle 20% duty cycle 11v-91v nonrepetitive 1.8v-10v nonrepetitive rectangular waveform t j =25 c prior to initial pulse figure 7a. maximum surge power 1.891 volts 1000 700 500 300 200 100 70 50 30 20 10 7 5 3 2 1 0.01 0.1 1 10 100 1000 p pk , peak surge power (watts) pw, pulse width (ms) figure 7b. maximum surge power do-204ah 100200 volts 1000 500 200 100 50 20 10 1 2 5 0.1 0.2 0.5 1 2 5 10 20 50 100 i z , zener current (ma) figure 8. effect of zener current on zener impedance z z , dynamic impedance (ohms) z z , dynamic impedance (ohms) 1000 700 500 200 100 70 50 20 10 7 5 2 1 1 2 3 5 7 10 20 30 50 70 100 v z , zener voltage (volts) figure 9. effect of zener voltage on zener impedance figure 10. typical forward characteristics rectangular waveform, t j =25 c 100-200volts nonrepetitive t j =25 c i z (rms)=0.1 i z (dc) f=60hz i z =1ma 5ma 20ma t j =25 c i z (rms)=0.1 i z (dc) f=60hz v z =2.7v 47v 27v 6.2v v f , forward voltage (volts) 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1000 500 200 100 50 20 10 5 2 1 i f , forward current (ma) minimum maximum 150 c 75 c 0 c 25 c
1n957b series http://onsemi.com 179 figure 11. zener voltage versus zener current e v z = 1 thru 16 volts v z , zener voltage (volts) i z , zener current (ma) 20 10 1 0.1 0.01 1 2 34 56 7 8 910111213141516 t a =25 figure 12. zener voltage versus zener current e v z = 15 thru 30 volts v z , zener voltage (volts) 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 10 1 0.1 0.01 t a =25 i z , zener current (ma)
1n957b series http://onsemi.com 180 figure 13. zener voltage versus zener current e v z = 30 thru 105 volts v z , zener voltage (volts) 10 1 0.1 0.01 30 35 40 45 50 55 60 70 75 80 85 90 95 100 figure 14. zener voltage versus zener current e v z = 110 thru 220 volts v z , zener voltage (volts) 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260 10 1 0.1 0.01 t a =25 65 105 i z , zener current (ma) i z , zener current (ma)
? semiconductor components industries, llc, 2001 may, 2001 rev. 1 181 publication order number: 1n5985b/d 1n5985b series 500 mw do-35 hermetically sealed glass zener voltage regulators this is a complete series of 500 mw zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of siliconoxide passivated junctions. all this in an axiallead hermetically sealed glass package that offers protection in all common environmental conditions. specification features: ? zener voltage range 2.4 v to 20 v ? esd rating of class 3 (>16 kv) per human body model ? do204ah (do35) package smaller than conventional do204aa package ? double slug type construction ? metallurgical bonded construction mechanical characteristics: case: double slug type, hermetically sealed glass finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 230 c, 1/16 from the case for 10 seconds polarity: cathode indicated by polarity band mounting position: any maximum ratings (note 1.) rating symbol value unit max. steady state power dissipation @ t l 75 c, lead length = 3/8 derate above 75 c p d 500 4.0 mw mw/ c operating and storage temperature range t j , t stg 65 to +200 c 1. some part number series have lower jedec registered ratings. device package shipping ordering information 1nxxxxb axial lead 3000 units/box 1nxxxxbrl axial lead axial lead case 299 glass http://onsemi.com 5000/tape & reel cathode anode 1nxxxxbrl2 * axial lead 5000/tape & reel 1nxxxxbta axial lead 5000/ammo pack * the a2o suffix refers to 26 mm tape spacing. polarity band up with cathode lead off first polarity band down with cathode lead off first l 1n xx xxb yww l = assembly location 1nxxxxb = device code = (see table next page) y = year ww = work week 1nxxxxbta2 * axial lead 5000/tape & reel 1nxxxxbrr1 axial lead 3000/tape & reel 1nxxxxbrr2 axial lead 3000/tape & reel marking diagram devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value.
zener voltage regulator i f v i i r i zt v r v z v f 1n5985b series http://onsemi.com 182 electrical characteristics (t l = 30 c unless otherwise noted, v f = 1.5 v max @ i f = 100 ma for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r breakdown voltage i f forward current v f forward voltage @ i f i zm maximum dc zener current electrical characteristics (t l = 30 c unless otherwise noted, v f = 1.5 v max @ i f = 100 ma for all types) zener voltage (note 3.) zener impedance (note 4.) leakage current i zm device device v z (volts) @ i zt z zt @ i zt z zk @ i zk i r @ v r i zm (note 5.) d ev i ce (note 2.) d ev i ce marking min nom max ma ma m a volts ma 1n5985b 1n5985b 2.28 2.4 2.52 5 100 1800 0.25 100 1.0 208 1n5987b 1n5987b 2.85 3.0 3.15 5 95 2000 0.25 50 1.0 167 1n5988b 1n5988b 3.13 3.3 3.46 5 95 2200 0.25 25 1.0 152 1n5990b 1n5990b 3.7 3.9 4.09 5 90 2400 0.25 10 1.0 128 1n5991b 1n5991b 4.08 4.3 4.51 5 88 2500 0.25 5.0 1.0 116 1n5992b 1n5992b 4.46 4.7 4.93 5 70 2200 0.25 3.0 1.5 106 1n5993b 1n5993b 4.84 5.1 5.35 5 50 2050 0.25 2.0 2.0 98 1n5994b 1n5994b 5.32 5.6 5.88 5 25 1800 0.25 2.0 3.0 89 1n5995b 1n5995b 5.89 6.2 6.51 5 10 1300 0.25 1.0 4.0 81 1n5996b 1n5996b 6.46 6.8 7.14 5 8.0 750 0.25 1.0 5.2 74 1n5997b 1n5997b 7.12 7.5 7.87 5 7.0 600 0.25 0.5 6.0 67 1n5998b 1n5998b 7.79 8.2 8.61 5 7.0 600 0.25 0.5 6.5 61 1n5999b 1n5999b 8.64 9.1 9.55 5 10 600 0.25 0.1 7.0 55 1n6000b 1n6000b 9.5 10 10.5 5 15 600 0.25 0.1 8.0 50 1n6001b 1n6001b 10.45 11 11.55 5 18 600 0.25 0.1 8.4 45 1n6002b 1n6002b 11.4 12 12.6 5 22 600 0.25 0.1 9.1 42 1n6004b 1n6004b 14.25 15 15.75 5 32 600 0.25 0.1 11 33 1n6007b 1n6007b 19 20 21 5 48 600 0.25 0.1 15 25 2. tolerance and voltage designation tolerance designation device tolerance of 5% is indicated by a abo suffix. 3. zener voltage (v z ) measurement the zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (t l ) at 30 c 1 c and 3/8 lead length. 4. zener impedance (z z ) derivation z zt and z zk are measured by dividing the ac voltage drop across the device by the ac current applied. the specified limits are for i z(ac) = 0.1 i z(dc) with the ac frequency = 1.0 khz. 5. maximum zener current ratings (i zm ) this data was calculated using nominal voltages. the maximum current handling capability on a worst case basis is limited by th e actual zener voltage at the operation point and the power derating curve.
1n5985b series http://onsemi.com 183 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 180 200 t l , lead temperature ( c) figure 1. steady state power derating heat sinks 3/8" 3/8" p d , steady state power dissipation (watts)
1n5985b series http://onsemi.com 184 application note e zener voltage since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. the following procedure is recommended: lead temperature, t l , should be determined from: t l = q la p d + t a . q la is the lead-to-ambient thermal resistance ( c/w) and p d is the power dissipation. the value for q la will vary and depends on the device mounting method. q la is generally 30 to 40 c/w for the various clips and tie points in common use and for printed circuit board wiring. the temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. the thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. using the measured value of t l , the junction temperature may be determined by: t j = t l + d t jl . d t jl is the increase in junction temperature above the lead temperature and may be found from figure 2 for dc power: d t jl = q jl p d . for worst-case design, using expected limits of i z , limits of p d and the extremes of t j ( d t j ) may be estimated. changes in voltage, v z , can then be found from: d v = q vz t j . q vz , the zener voltage temperature coefficient, is found from figures 4 and 5. under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. for best regulation, keep current excursions as low as possible. surge limitations are given in figure 7. they are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots, resulting in device degradation should the limits of figure 7 be exceeded. ll 500 400 300 200 100 0 0 0.2 0.4 0.6 0.8 1 2.4-60v 62-200v l, lead length to heat sink (inch) jl , junctiontolead thermal resistance ( c/w) q figure 2. typical thermal resistance typical leakage current at 80% of nominal breakdown voltage +25 c +125 c 1000 7000 5000 2000 1000 700 500 200 100 70 50 20 10 7 5 2 1 0.7 0.5 0.2 0.1 0.07 0.05 0.02 0.01 0.007 0.005 0.002 0.001 3 4 5 6 7 8 910 1112131415 v z , nominal zener voltage (volts) i , leakage current ( a) m r figure 3. typical leakage current
1n5985b series http://onsemi.com 185 +12 +10 +8 +6 +4 +2 0 -2 -4 2345 678 9101112 v z , zener voltage (volts) figure 4a. range for units to 12 volts v z @i zt (note 2) range temperature coefficients (55 c to +150 c temperature range; 90% of the units are in the ranges indicated.) 100 70 50 30 20 10 7 5 3 2 1 2 3 4 5 6 7 8 9 10 11 12 10 20 30 50 70 100 v z , zener voltage (volts) figure 4b. range for units 12 to 100 volts range v z @i z (note 2) 120 130 140 150 160 170 180 190 200 200 180 160 140 120 100 v z , zener voltage (volts) figure 4c. range for units 120 to 200 volts v z @i zt (note 2) +6 +4 +2 0 -2 -4 3 4 56 78 v z , zener voltage (volts) figure 5. effect of zener current note: below 3 volts and above 8 volts note: changes in zener current do not note: affect temperature coefficients 1ma 0.01ma v z @i z t a =25 c 1000 c, capacitance (pf) 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 v z , zener voltage (volts) figure 6a. typical capacitance 2.4100 volts t a =25 c 0v bias 1v bias 50% of v z bias 100 70 50 30 20 10 7 5 3 2 1 120 140 160 180 190 200 220 v z , zener voltage (volts) figure 6b. typical capacitance 120200 volts t a =25 c 1voltbias 50% of v z bias 0 bias q v z , temperature coefficient (mv/ c) 20ma c, capacitance (pf) q v z , temperature coefficient (mv/ c) q v z , temperature coefficient (mv/ c) q v z , temperature coefficient (mv/ c)
1n5985b series http://onsemi.com 186 100 70 50 30 20 10 7 5 3 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 p pk , peak surge power (watts) pw, pulse width (ms) 5% duty cycle 10% duty cycle 20% duty cycle 11v-91v nonrepetitive 1.8v-10v nonrepetitive rectangular waveform t j =25 c prior to initial pulse figure 7a. maximum surge power 1.891 volts 1000 700 500 300 200 100 70 50 30 20 10 7 5 3 2 1 0.01 0.1 1 10 100 1000 p pk , peak surge power (watts) pw, pulse width (ms) figure 7b. maximum surge power do-204ah 100200 volts 1000 500 200 100 50 20 10 1 2 5 0.1 0.2 0.5 1 2 5 10 20 50 100 i z , zener current (ma) figure 8. effect of zener current on zener impedance z z , dynamic impedance (ohms) z z , dynamic impedance (ohms) 1000 700 500 200 100 70 50 20 10 7 5 2 1 1 2 3 5 7 10 20 30 50 70 100 v z , zener voltage (volts) figure 9. effect of zener voltage on zener impedance figure 10. typical forward characteristics rectangular waveform, t j =25 c 100-200volts nonrepetitive t j =25 c i z (rms)=0.1 i z (dc) f=60hz i z =1ma 5ma 20ma t j =25 c i z (rms)=0.1 i z (dc) f=60hz v z =2.7v 47v 27v 6.2v v f , forward voltage (volts) 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1000 500 200 100 50 20 10 5 2 1 i f , forward current (ma) minimum maximum 150 c 75 c 0 c 25 c
1n5985b series http://onsemi.com 187 figure 11. zener voltage versus zener current e v z = 1 thru 16 volts v z , zener voltage (volts) i z , zener current (ma) 20 10 1 0.1 0.01 1 2 34 56 7 8 910111213141516 t a =25 figure 12. zener voltage versus zener current e v z = 15 thru 30 volts v z , zener voltage (volts) 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 10 1 0.1 0.01 t a =25 i z , zener current (ma)
1n5985b series http://onsemi.com 188 figure 13. zener voltage versus zener current e v z = 30 thru 105 volts v z , zener voltage (volts) 10 1 0.1 0.01 30 35 40 45 50 55 60 70 75 80 85 90 95 100 figure 14. zener voltage versus zener current e v z = 110 thru 220 volts v z , zener voltage (volts) 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260 10 1 0.1 0.01 t a =25 65 105 i z , zener current (ma) i z , zener current (ma)
? semiconductor components industries, llc, 2001 may, 2001 rev. 1 189 publication order number: bzx79c2v4rl/d bzx79c2v4rl series 500 mw do-35 hermetically sealed glass zener voltage regulators this is a complete series of 500 mw zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of siliconoxide passivated junctions. all this in an axiallead hermetically sealed glass package that offers protection in all common environmental conditions. specification features: ? zener voltage range 2.4 v to 33 v ? esd rating of class 3 (>16 kv) per human body model ? do204ah (do35) package smaller than conventional do204aa package ? double slug type construction ? metallurgical bonded construction mechanical characteristics: case: double slug type, hermetically sealed glass finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 230 c, 1/16 from the case for 10 seconds polarity: cathode indicated by polarity band mounting position: any maximum ratings (note 1.) rating symbol value unit max. steady state power dissipation @ t l 75 c, lead length = 3/8 derate above 75 c p d 500 4.0 mw mw/ c operating and storage temperature range t j , t stg 65 to +200 c 1. some part number series have lower jedec registered ratings. device package shipping ordering information bzx79cxxxrl axial lead 5000/tape & reel bzx79cxxxrl2* axial lead axial lead case 299 glass http://onsemi.com 5000/tape & reel cathode anode * the a2o suffix refers to 26 mm tape spacing. l 79c xxx yww l = assembly location 79cxxx = device code = (see table next page) y = year ww = work week marking diagram
zener voltage regulator i f v i i r i zt v r v z v f bzx79c2v4rl series http://onsemi.com 190 electrical characteristics (t l = 30 c unless otherwise noted, v f = 1.5 v max @ i f = 100 ma for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt v br temperature coefficient of v br (typical) i r reverse leakage current (t a = 25 c) @ v r v r breakdown voltage i f forward current v f forward voltage @ i f c capacitance (typical) electrical characteristics (t l = 30 c unless otherwise noted, v f = 1.5 v max @ i f = 100 ma for all types) zener voltage (note 3.) z zt (note 4.) @i leakage current v br c v 0 device device v z (volts) @ i zt @ i zt (f = 1.0 khz) i r @ v r mv/ c v z = 0, f = 1.0 mhz d ev i ce (note 2.) d ev i ce marking min nom max ma m a volts min max pf bzx79c2v4rl 79c2v4 2.28 2.4 2.52 5 100 100 1 3.5 0 255 bzx79c2v7rl 79c2v7 2.57 2.7 2.84 5 100 75 1 3.5 0 230 bzx79c3v0rl 79c3v0 2.85 3.0 3.15 5 95 50 1 3.5 0 215 bzx79c3v3rl 79c3v3 3.14 3.3 3.47 5 95 25 1 3.5 0 200 bzx79c3v6rl 79c3v6 3.42 3.6 3.78 5 90 15 1 3.5 0 185 bzx79c3v9rl 79c3v9 3.71 3.9 4.10 5 90 10 1 3.5 0.3 175 bzx79c4v7rl 79c4v7 4.47 4.7 4.94 5 80 3 2 3.5 0.2 130 bzx79c5v1rl 79c5v1 4.85 5.1 5.36 5 60 2 2 2.7 1.2 110 bzx79c5v6rl 79c5v6 5.32 5.6 5.88 5 40 1 2 2.0 2.5 95 bzx79c6v2rl 79c6v2 5.89 6.2 6.51 5 10 3 4 0.4 3.7 90 bzx79c6v8rl 79c6v8 6.46 6.8 7.19 5 15 2 4 1.2 4.5 85 bzx79c7v5rl 79c7v5 7.13 7.5 7.88 5 15 1 5 2.5 5.3 80 bzx79c8v2rl 79c8v2 7.79 8.2 8.61 5 15 0.7 5 3.2 6.2 75 bzx79c10rl 79c10 9.5 10 10.5 5 20 0.2 7 4.5 8.0 70 bzx79c12rl 79c12 11.4 12 12.6 5 25 0.1 8 6.0 10 65 bzx79c15rl 79c15 14.25 15 15.75 5 30 0.05 10.5 9.2 13 55 bzx79c16rl 79c16 15.2 16 16.8 5 40 0.05 11.2 10.4 14 52 bzx79c18rl 79c18 17.1 18 18.9 5 45 0.05 12.6 12.9 16 47 bzx79c22rl 79c22 20.9 22 23.1 5 55 0.05 15.4 16.4 20 34 bzx79c24rl 79c24 22.8 24 25.2 5 70 0.05 16.8 18.4 22 33 bzx79c27rl 79c27 25.65 27 28.35 5 80 0.05 18.9 23.5 30 bzx79c30rl 79c30 28.5 30 31.5 5 80 0.05 21 26 27 bzx79c33rl 79c33 31.35 33 34.65 5 80 0.05 23.1 29 25 2. tolerance and voltage designation tolerance designation the type numbers listed have zener voltage min/max limits as shown. 3. reverse zener voltage (v z ) measurement reverse zener voltage is measured under pulse conditions such that t j is no more than 2 c above t a . 4. zener impedance (z z ) derivation z zt and z zk are measured by dividing the ac voltage drop across the device by the ac current applied. the specified limits are for i z(ac) = 0.1 i z(dc) with the ac frequency = 1.0 khz.
bzx79c2v4rl series http://onsemi.com 191 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 180 200 t l , lead temperature ( c) figure 1. steady state power derating heat sinks 3/8" 3/8" p d , steady state power dissipation (watts)
bzx79c2v4rl series http://onsemi.com 192 application note e zener voltage since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. the following procedure is recommended: lead temperature, t l , should be determined from: t l = q la p d + t a . q la is the lead-to-ambient thermal resistance ( c/w) and p d is the power dissipation. the value for q la will vary and depends on the device mounting method. q la is generally 30 to 40 c/w for the various clips and tie points in common use and for printed circuit board wiring. the temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. the thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. using the measured value of t l , the junction temperature may be determined by: t j = t l + d t jl . d t jl is the increase in junction temperature above the lead temperature and may be found from figure 2 for dc power: d t jl = q jl p d . for worst-case design, using expected limits of i z , limits of p d and the extremes of t j ( d t j ) may be estimated. changes in voltage, v z , can then be found from: d v = q vz t j . q vz , the zener voltage temperature coefficient, is found from figures 4 and 5. under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. for best regulation, keep current excursions as low as possible. surge limitations are given in figure 7. they are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots, resulting in device degradation should the limits of figure 7 be exceeded. ll 500 400 300 200 100 0 0 0.2 0.4 0.6 0.8 1 2.4-60v 62-200v l, lead length to heat sink (inch) jl , junctiontolead thermal resistance ( c/w) q figure 2. typical thermal resistance typical leakage current at 80% of nominal breakdown voltage +25 c +125 c 1000 7000 5000 2000 1000 700 500 200 100 70 50 20 10 7 5 2 1 0.7 0.5 0.2 0.1 0.07 0.05 0.02 0.01 0.007 0.005 0.002 0.001 3 4 5 6 7 8 910 1112131415 v z , nominal zener voltage (volts) i , leakage current ( a) m r figure 3. typical leakage current
bzx79c2v4rl series http://onsemi.com 193 +12 +10 +8 +6 +4 +2 0 -2 -4 2345 678 9101112 v z , zener voltage (volts) figure 4a. range for units to 12 volts v z @i zt (note 2) range temperature coefficients (55 c to +150 c temperature range; 90% of the units are in the ranges indicated.) 100 70 50 30 20 10 7 5 3 2 1 2 3 4 5 6 7 8 9 10 11 12 10 20 30 50 70 100 v z , zener voltage (volts) figure 4b. range for units 12 to 100 volts range v z @i z (note 2) 120 130 140 150 160 170 180 190 200 200 180 160 140 120 100 v z , zener voltage (volts) figure 4c. range for units 120 to 200 volts v z @i zt (note 2) +6 +4 +2 0 -2 -4 3 4 56 78 v z , zener voltage (volts) figure 5. effect of zener current note: below 3 volts and above 8 volts note: changes in zener current do not note: affect temperature coefficients 1ma 0.01ma v z @i z t a =25 c 1000 c, capacitance (pf) 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 v z , zener voltage (volts) figure 6a. typical capacitance 2.4100 volts t a =25 c 0v bias 1v bias 50% of v z bias 100 70 50 30 20 10 7 5 3 2 1 120 140 160 180 190 200 220 v z , zener voltage (volts) figure 6b. typical capacitance 120200 volts t a =25 c 1voltbias 50% of v z bias 0 bias q v z , temperature coefficient (mv/ c) 20ma c, capacitance (pf) q v z , temperature coefficient (mv/ c) q v z , temperature coefficient (mv/ c) q v z , temperature coefficient (mv/ c)
bzx79c2v4rl series http://onsemi.com 194 100 70 50 30 20 10 7 5 3 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 p pk , peak surge power (watts) pw, pulse width (ms) 5% duty cycle 10% duty cycle 20% duty cycle 11v-91v nonrepetitive 1.8v-10v nonrepetitive rectangular waveform t j =25 c prior to initial pulse figure 7a. maximum surge power 1.891 volts 1000 700 500 300 200 100 70 50 30 20 10 7 5 3 2 1 0.01 0.1 1 10 100 1000 p pk , peak surge power (watts) pw, pulse width (ms) figure 7b. maximum surge power do-204ah 100200 volts 1000 500 200 100 50 20 10 1 2 5 0.1 0.2 0.5 1 2 5 10 20 50 100 i z , zener current (ma) figure 8. effect of zener current on zener impedance z z , dynamic impedance (ohms) z z , dynamic impedance (ohms) 1000 700 500 200 100 70 50 20 10 7 5 2 1 1 2 3 5 7 10 20 30 50 70 100 v z , zener voltage (volts) figure 9. effect of zener voltage on zener impedance figure 10. typical forward characteristics rectangular waveform, t j =25 c 100-200volts nonrepetitive t j =25 c i z (rms)=0.1 i z (dc) f=60hz i z =1ma 5ma 20ma t j =25 c i z (rms)=0.1 i z (dc) f=60hz v z =2.7v 47v 27v 6.2v v f , forward voltage (volts) 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1000 500 200 100 50 20 10 5 2 1 i f , forward current (ma) minimum maximum 150 c 75 c 0 c 25 c
bzx79c2v4rl series http://onsemi.com 195 figure 11. zener voltage versus zener current e v z = 1 thru 16 volts v z , zener voltage (volts) i z , zener current (ma) 20 10 1 0.1 0.01 1 2 34 56 7 8 910111213141516 t a =25 figure 12. zener voltage versus zener current e v z = 15 thru 30 volts v z , zener voltage (volts) 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 10 1 0.1 0.01 t a =25 i z , zener current (ma)
bzx79c2v4rl series http://onsemi.com 196 figure 13. zener voltage versus zener current e v z = 30 thru 105 volts v z , zener voltage (volts) 10 1 0.1 0.01 30 35 40 45 50 55 60 70 75 80 85 90 95 100 figure 14. zener voltage versus zener current e v z = 110 thru 220 volts v z , zener voltage (volts) 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260 10 1 0.1 0.01 t a =25 65 105 i z , zener current (ma) i z , zener current (ma)
? semiconductor components industries, llc, 2001 may, 2001 rev. 1 197 publication order number: 1n4678/d 1n4678 series 500 mw do-35 hermetically sealed glass zener voltage regulators this is a complete series of 500 mw zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of siliconoxide passivated junctions. all this in an axiallead hermetically sealed glass package that offers protection in all common environmental conditions. specification features: ? zener voltage range 1.8 v to 27 v ? esd rating of class 3 (>16 kv) per human body model ? do204ah (do35) package smaller than conventional do204aa package ? double slug type construction ? metallurgical bonded construction mechanical characteristics: case: double slug type, hermetically sealed glass finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 230 c, 1/16 from the case for 10 seconds polarity: cathode indicated by polarity band mounting position: any maximum ratings (note 1.) rating symbol value unit max. steady state power dissipation @ t l 75 c, lead length = 3/8 derate above 75 c p d 500 4.0 mw mw/ c operating and storage temperature range t j , t stg 65 to +200 c 1. some part number series have lower jedec registered ratings. device package shipping ordering information 1n4xxx axial lead 3000 units/box 1n4xxxrl axial lead axial lead case 299 glass http://onsemi.com 5000/tape & reel cathode anode 1n4xxxrl2 * axial lead 5000/tape & reel 1n4xxxta axial lead 5000/ammo pack * the a2o suffix refers to 26 mm tape spacing. polarity band up with cathode lead off first polarity band down with cathode lead off first l 1n 4x xx yww l = assembly location 1n4xxx = device code = (see table next page) y = year ww = work week 1n4xxxta2 * axial lead 5000/tape & reel 1n4xxxrr1 axial lead 3000/tape & reel 1n4xxxrr2 axial lead 3000/tape & reel marking diagram devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value.
zener voltage regulator i f v i i r i zt v r v z v f 1n4678 series http://onsemi.com 198 low level oxide passivated zener diodes for applications requiring extremely low operating currents, low leakage, and sharp breakdown voltage. electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.5 v max @ i f = 100 ma for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current v z reverse zener voltage change i zm maximum zener current i r reverse leakage current @ v r v r breakdown voltage i f forward current v f forward voltage @ i f
1n4678 series http://onsemi.com 199 electrical characteristics (t l = 30 c unless otherwise noted, v f = 1.5 v max @ i f = 100 ma for all types) zener voltage (note 3.) leakage current (note 4.) i zm v z device device v z (volts) @ i zt i r @ v r i zm (note 5.) v z (note 6.) d ev i ce (note 2.) d ev i ce marking min nom max a m a max volts ma volts 1n4678 1n4678 1.71 1.8 1.89 50 7.5 1 120 0.7 1n4679 1n4679 1.9 2.0 2.1 50 5 1 110 0.7 1n4680 1n4680 2.09 2.2 2.31 50 5 1 100 0.75 1n4681 1n4681 2.28 2.4 2.52 50 2 1 95 0.8 1n4682 1n4682 2.565 2.7 2.835 50 1 1 90 0.85 1n4683 1n4683 2.85 3.0 3.15 50 0.8 1 85 0.9 1n4684 1n4684 3.135 3.3 3.465 50 7.5 1.5 80 0.95 1n4685 1n4685 3.42 3.6 3.78 50 7.5 2 75 0.95 1n4686 1n4686 3.705 3.9 4.095 50 5.0 2 70 0.97 1n4687 1n4687 4.085 4.3 4.515 50 4.0 2 65 0.99 1n4688 1n4688 4.465 4.7 4.935 50 10 3 60 0.99 1n4689 1n4689 4.845 5.1 5.355 50 10 3 55 0.97 1n4690 1n4690 5.32 5.6 5.88 50 10 4 50 0.96 1n4691 1n4691 5.89 6.2 6.51 50 10 5 45 0.95 1n4692 1n4692 6.46 6.8 7.14 50 10 5.1 35 0.9 1n4693 1n4693 7.125 7.5 7.875 50 10 5.7 31.8 0.75 1n4694 1n4694 7.79 8.2 8.61 50 1 6.2 29 0.5 1n4695 1n4695 8.265 8.7 9.135 50 1 6.6 27.4 0.1 1n4696 1n4696 8.645 9.1 9.555 50 1 6.9 26.2 0.08 1n4697 1n4697 9.5 10 10.5 50 1 7.6 24.8 0.1 1n4698 1n4698 10.45 11 11.55 50 0.05 8.4 21.6 0.11 1n4699 1n4699 11.4 12 12.6 50 0.05 9.1 20.4 0.12 1n4700 1n4700 12.35 13 13.65 50 0.05 9.8 19 0.13 1n4701 1n4701 13.3 14 14.7 50 0.05 10.6 17.5 0.14 1n4702 1n4702 14.25 15 15.75 50 0.05 11.4 16.3 0.15 1n4703 1n4703 15.2 16 16.8 50 0.05 12.1 15.4 0.16 1n4704 1n4704 16.15 17 17.85 50 0.05 12.9 14.5 0.17 1n4705 1n4705 17.1 18 18.9 50 0.05 13.6 13.2 0.18 1n4707 1n4707 19 20 21 50 0.01 15.2 11.9 0.2 1n4711 1n4711 25.65 27 28.35 50 0.01 20.4 8.8 0.27 2. tolerance and type number designation (v z ) the type numbers listed have a standard tolerance of 5% on the nominal zener voltage. 3. zener voltage (v z ) measurement the zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (t l ) at 30 c 1 c and 3/8 lead length. 4. reverse leakage current (i r ) reverse leakage currents are guaranteed and measured at v r shown on the table. 5. maximum zener current ratings (i zm ) maximum zener current ratings are based on maximum zener voltage of the individual units and jedec 250 mw rating. 6. maximum voltage change ( v z ) voltage change is equal to the difference between v z at 100 a and at 10 a.
1n4678 series http://onsemi.com 200 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 180 200 t l , lead temperature ( c) figure 1. steady state power derating heat sinks 3/8" 3/8" p d , steady state power dissipation (watts)
1n4678 series http://onsemi.com 201 application note e zener voltage since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. the following procedure is recommended: lead temperature, t l , should be determined from: t l = q la p d + t a . q la is the lead-to-ambient thermal resistance ( c/w) and p d is the power dissipation. the value for q la will vary and depends on the device mounting method. q la is generally 30 to 40 c/w for the various clips and tie points in common use and for printed circuit board wiring. the temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. the thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. using the measured value of t l , the junction temperature may be determined by: t j = t l + d t jl . d t jl is the increase in junction temperature above the lead temperature and may be found from figure 2 for dc power: d t jl = q jl p d . for worst-case design, using expected limits of i z , limits of p d and the extremes of t j ( d t j ) may be estimated. changes in voltage, v z , can then be found from: d v = q vz t j . q vz , the zener voltage temperature coefficient, is found from figures 4 and 5. under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. for best regulation, keep current excursions as low as possible. surge limitations are given in figure 7. they are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots, resulting in device degradation should the limits of figure 7 be exceeded. ll 500 400 300 200 100 0 0 0.2 0.4 0.6 0.8 1 2.4-60v 62-200v l, lead length to heat sink (inch) jl , junctiontolead thermal resistance ( c/w) q figure 2. typical thermal resistance typical leakage current at 80% of nominal breakdown voltage +25 c +125 c 1000 7000 5000 2000 1000 700 500 200 100 70 50 20 10 7 5 2 1 0.7 0.5 0.2 0.1 0.07 0.05 0.02 0.01 0.007 0.005 0.002 0.001 3 4 5 6 7 8 910 1112131415 v z , nominal zener voltage (volts) i , leakage current ( a) m r figure 3. typical leakage current
1n4678 series http://onsemi.com 202 +12 +10 +8 +6 +4 +2 0 -2 -4 2345 678 9101112 v z , zener voltage (volts) figure 4a. range for units to 12 volts v z @i zt (note 2) range temperature coefficients (55 c to +150 c temperature range; 90% of the units are in the ranges indicated.) 100 70 50 30 20 10 7 5 3 2 1 2 3 4 5 6 7 8 9 10 11 12 10 20 30 50 70 100 v z , zener voltage (volts) figure 4b. range for units 12 to 100 volts range v z @i z (note 2) 120 130 140 150 160 170 180 190 200 200 180 160 140 120 100 v z , zener voltage (volts) figure 4c. range for units 120 to 200 volts v z @i zt (note 2) +6 +4 +2 0 -2 -4 3 4 56 78 v z , zener voltage (volts) figure 5. effect of zener current note: below 3 volts and above 8 volts note: changes in zener current do not note: affect temperature coefficients 1ma 0.01ma v z @i z t a =25 c 1000 c, capacitance (pf) 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 v z , zener voltage (volts) figure 6a. typical capacitance 2.4100 volts t a =25 c 0v bias 1v bias 50% of v z bias 100 70 50 30 20 10 7 5 3 2 1 120 140 160 180 190 200 220 v z , zener voltage (volts) figure 6b. typical capacitance 120200 volts t a =25 c 1voltbias 50% of v z bias 0 bias q v z , temperature coefficient (mv/ c) 20ma c, capacitance (pf) q v z , temperature coefficient (mv/ c) q v z , temperature coefficient (mv/ c) q v z , temperature coefficient (mv/ c)
1n4678 series http://onsemi.com 203 100 70 50 30 20 10 7 5 3 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 p pk , peak surge power (watts) pw, pulse width (ms) 5% duty cycle 10% duty cycle 20% duty cycle 11v-91v nonrepetitive 1.8v-10v nonrepetitive rectangular waveform t j =25 c prior to initial pulse figure 7a. maximum surge power 1.891 volts 1000 700 500 300 200 100 70 50 30 20 10 7 5 3 2 1 0.01 0.1 1 10 100 1000 p pk , peak surge power (watts) pw, pulse width (ms) figure 7b. maximum surge power do-204ah 100200 volts 1000 500 200 100 50 20 10 1 2 5 0.1 0.2 0.5 1 2 5 10 20 50 100 i z , zener current (ma) figure 8. effect of zener current on zener impedance z z , dynamic impedance (ohms) z z , dynamic impedance (ohms) 1000 700 500 200 100 70 50 20 10 7 5 2 1 1 2 3 5 7 10 20 30 50 70 100 v z , zener voltage (volts) figure 9. effect of zener voltage on zener impedance figure 10. typical forward characteristics rectangular waveform, t j =25 c 100-200volts nonrepetitive t j =25 c i z (rms)=0.1 i z (dc) f=60hz i z =1ma 5ma 20ma t j =25 c i z (rms)=0.1 i z (dc) f=60hz v z =2.7v 47v 27v 6.2v v f , forward voltage (volts) 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1000 500 200 100 50 20 10 5 2 1 i f , forward current (ma) minimum maximum 150 c 75 c 0 c 25 c
1n4678 series http://onsemi.com 204 figure 11. zener voltage versus zener current e v z = 1 thru 16 volts v z , zener voltage (volts) i z , zener current (ma) 20 10 1 0.1 0.01 1 2 34 56 7 8 910111213141516 t a =25 figure 12. zener voltage versus zener current e v z = 15 thru 30 volts v z , zener voltage (volts) 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 10 1 0.1 0.01 t a =25 i z , zener current (ma)
1n4678 series http://onsemi.com 205 figure 13. zener voltage versus zener current e v z = 30 thru 105 volts v z , zener voltage (volts) 10 1 0.1 0.01 30 35 40 45 50 55 60 70 75 80 85 90 95 100 figure 14. zener voltage versus zener current e v z = 110 thru 220 volts v z , zener voltage (volts) 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260 10 1 0.1 0.01 t a =25 65 105 i z , zener current (ma) i z , zener current (ma)
? semiconductor components industries, llc, 2001 may, 2001 rev. 2 206 publication order number: 1n5221b/d 1n5221b series 500 mw do-35 hermetically sealed glass zener voltage regulators this is a complete series of 500 mw zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of siliconoxide passivated junctions. all this in an axiallead hermetically sealed glass package that offers protection in all common environmental conditions. specification features: ? zener voltage range 2.4 v to 91 v ? esd rating of class 3 (>16 kv) per human body model ? do204ah (do35) package smaller than conventional do204aa package ? double slug type construction ? metallurgical bonded construction mechanical characteristics: case: double slug type, hermetically sealed glass finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 230 c, 1/16 from the case for 10 seconds polarity: cathode indicated by polarity band mounting position: any maximum ratings (note 1.) rating symbol value unit max. steady state power dissipation @ t l 75 c, lead length = 3/8 derate above 75 c p d 500 4.0 mw mw/ c operating and storage temperature range t j , t stg 65 to +200 c 1. some part number series have lower jedec registered ratings. 1n52xxbta axial lead 5000/ammo pack 1n52xxbta2 * axial lead 5000/ammo pack 1n52xxbrr1 axial lead 3000/tape & reel 1n52xxbrr2 axial lead 3000/tape & reel device package shipping ordering information 1n52xxb axial lead 3000 units/box 1n52xxbrl axial lead axial lead case 299 glass http://onsemi.com 5000/tape & reel cathode anode 1n52xxbrl2 * axial lead 5000/tape & reel * the a2o suffix refers to 26 mm tape spacing. polarity band up with cathode lead off first polarity band down with cathode lead off first l 1n 52 xxb yww l = assembly location 1n52xxb = device code = (see table next page) y = year ww = work week marking diagram devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. 1n52xxbra1 axial lead 3000/ammo pack
zener voltage regulator i f v i i r i zt v r v z v f 1n5221b series http://onsemi.com 207 electrical characteristics (t a = 25 c unless otherwise noted, based on dc measurements at thermal equilibrium; lead length = 3/8 ; thermal resistance of heat sink = 30 c/w, v f = 1.1 v max @ i f = 200 ma for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r breakdown voltage i f forward current v f forward voltage @ i f vz maximum zener voltage temperature coefficient electrical characteristics (t a = 25 c unless otherwise noted, based on dc measurements at thermal equilibrium; lead length = 3/8 ; thermal resistance of heat sink = 30 c/w, v f = 1.1 v max @ i f = 200 ma for all types) zener voltage (note 3.) zener impedance (note 4.) leakage current vz device device v z (volts) @ i zt z zt @ i zt z zk @ i zk i r @ v r vz (note 5.) d ev i ce (note 2.) d ev i ce marking min nom max ma ma m a volts %/ c 1n5221b 1n5221b 2.28 2.4 2.52 20 30 1200 0.25 100 1 0.085 1n5222b 1n5222b 2.375 2.5 2.625 20 30 1250 0.25 100 1 0.085 1n5223b 1n5223b 2.565 2.7 2.835 20 30 1300 0.25 75 1 0.08 1n5224b 1n5224b 2.66 2.8 2.94 20 30 1400 0.25 75 1 0.08 1n5225b 1n5225b 2.85 3.0 3.15 20 29 1600 0.25 50 1 0.075 1n5226b 1n5226b 3.14 3.3 3.46 20 28 1600 0.25 25 1 0.07 1n5227b 1n5227b 3.42 3.6 3.78 20 24 1700 0.25 15 1 0.065 1n5228b 1n5228b 3.71 3.9 4.09 20 23 1900 0.25 10 1 0.06 1n5229b 1n5229b 4.09 4.3 4.51 20 22 2000 0.25 5 1 0.055 1n5230b 1n5230b 4.47 4.7 4.93 20 19 1900 0.25 5 2 0.03 1n5231b 1n5231b 4.85 5.1 5.35 20 17 1600 0.25 5 2 0.03 1n5232b 1n5232b 5.32 5.6 5.88 20 11 1600 0.25 5 3 0.038 1n5233b 1n5233b 5.7 6.0 6.3 20 7 1600 0.25 5 3.5 0.038 1n5234b 1n5234b 5.89 6.2 6.51 20 7 1000 0.25 5 4 0.045 1n5235b 1n5235b 6.46 6.8 7.14 20 5 750 0.25 3 5 0.05 2. tolerance the jedec type numbers shown indicate a tolerance of 5%. 3. zener voltage (v z ) measurement the zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (t l ) at 30 c 1 c and 3/8 lead length. 4. zener impedance (z z ) derivation z zt and z zk are measured by dividing the ac voltage drop across the device by the ac current applied. the specified limits are for i z(ac) = 0.1 i z(dc) with the ac frequency = 60 hz. 5. temperature coefficient ( vz ) * test conditions for temperature coefficient are as follows: a. i zt = 7.5 ma, t 1 = 25 c, t 2 = 125 c (1n5221b through 1n5242b) b. i zt = rated i zt , t 1 = 25 c, t 2 = 125 c (1n5243b through 1n5281b) device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperatur e. * for more information on special selections contact your nearest on semiconductor representative.
1n5221b series http://onsemi.com 208 electrical characteristics (t a = 25 c unless otherwise noted, based on dc measurements at thermal equilibrium; lead length = 3/8 ; thermal resistance of heat sink = 30 c/w, v f = 1.1 v max @ i f = 200 ma for all types) (continued) zener voltage (note 7.) zener impedance (note 8.) leakage current vz device device v z (volts) @ i zt z zt @ i zt z zk @ i zk i r @ v r vz (note 9.) d ev i ce (note 6.) d ev i ce marking min nom max ma ma m a volts %/ c 1n5236b 1n5236b 7.13 7.5 7.87 20 6 500 0.25 3 6 0.058 1n5237b 1n5237b 7.79 8.2 8.61 20 8 500 0.25 3 6.5 0.062 1n5238b 1n5238b 8.265 8.7 9.135 20 8 600 0.25 3 6.5 0.065 1n5239b 1n5239b 8.65 9.1 9.55 20 10 600 0.25 3 7 0.068 1n5240b 1n5240b 9.5 10 10.5 20 17 600 0.25 3 8 0.075 1n5241b 1n5241b 10.45 11 11.55 20 22 600 0.25 2 8.4 0.076 1n5242b 1n5242b 11.4 12 12.6 20 30 600 0.25 1 9.1 0.077 1n5243b 1n5243b 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9 0.079 1n5244b 1n5244b 13.3 14 14.7 9 15 600 0.25 0.1 10 0.082 1n5245b 1n5245b 14.25 15 15.75 8.5 16 600 0.25 0.1 11 0.082 1n5246b 1n5246b 15.2 16 16.8 7.8 17 600 0.25 0.1 12 0.083 1n5247b 1n5247b 16.15 17 17.85 7.4 19 600 0.25 0.1 13 0.084 1n5248b 1n5248b 17.1 18 18.9 7 21 600 0.25 0.1 14 0.085 1n5249b 1n5249b 18.05 19 19.95 6.6 23 600 0.25 0.1 14 0.086 1n5250b 1n5250b 19 20 21 6.2 25 600 0.25 0.1 15 0.086 1n5251b 1n5251b 20.9 22 23.1 5.6 29 600 0.25 0.1 17 0.087 1n5252b 1n5252b 22.8 24 25.2 5.2 33 600 0.25 0.1 18 0.088 1n5253b 1n5253b 23.75 25 26.25 5.0 35 600 0.25 0.1 19 0.089 1n5254b 1n5254b 25.65 27 28.35 4.6 41 600 0.25 0.1 21 0.090 1n5255b 1n5255b 26.6 28 29.4 4.5 44 600 0.25 0.1 21 0.091 1n5256b 1n5256b 28.5 30 31.5 4.2 49 600 0.25 0.1 23 0.091 1n5257b 1n5257b 31.35 33 34.65 3.8 58 700 0.25 0.1 25 0.092 1n5258b 1n5258b 34.2 36 37.8 3.4 70 700 0.25 0.1 27 0.093 1n5259b 1n5259b 37.05 39 40.95 3.2 80 800 0.25 0.1 30 0.094 1n5260b 1n5260b 40.85 43 45.15 3.0 93 900 0.25 0.1 33 0.095 1n5261b 1n5261b 44.65 47 49.35 2.7 105 1000 0.25 0.1 36 0.095 1n5262b 1n5262b 48.45 51 53.55 2.5 125 1100 0.25 0.1 39 0.096 1n5263b 1n5263b 53.2 56 58.8 2.2 150 1300 0.25 0.1 43 0.096 1n5264b 1n5264b 57 60 63 2.1 170 1400 0.25 0.1 46 0.097 1n5265b 1n5265b 58.9 62 65.1 2.0 185 1400 0.25 0.1 47 0.097 1n5266b 1n5266b 64.6 68 71.4 1.8 230 1600 0.25 0.1 52 0.097 1n5267b 1n5267b 71.25 75 78.75 1.7 270 1700 0.25 0.1 56 0.098 1n5268b 1n5268b 77.9 82 86.1 1.5 330 2000 0.25 0.1 62 0.098 1n5269b 1n5269b 82.65 87 91.35 1.4 370 2200 0.25 0.1 68 0.099 1n5270b 1n5270b 86.45 91 95.55 1.4 400 2300 0.25 0.1 69 0.099 6. tolerance the jedec type numbers shown indicate a tolerance of 5%. 7. zener voltage (v z ) measurement the zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (t l ) at 30 c 1 c and 3/8 lead length. 8. zener impedance (z z ) derivation z zt and z zk are measured by dividing the ac voltage drop across the device by the ac current applied. the specified limits are for i z(ac) = 0.1 i z(dc) with the ac frequency = 60 hz. 9. temperature coefficient ( vz ) * test conditions for temperature coefficient are as follows: a. i zt = 7.5 ma, t 1 = 25 c, t 2 = 125 c (1n5221b through 1n5242b) b. i zt = rated i zt , t 1 = 25 c, t 2 = 125 c (1n5243b through 1n5281b) device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperatur e. * for more information on special selections contact your nearest on semiconductor representative.
1n5221b series http://onsemi.com 209 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 160 180 200 t l , lead temperature ( c) figure 1. steady state power derating heat sinks 3/8" 3/8" p d , steady state power dissipation (watts)
1n5221b series http://onsemi.com 210 application note e zener voltage since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. the following procedure is recommended: lead temperature, t l , should be determined from: t l = q la p d + t a . q la is the lead-to-ambient thermal resistance ( c/w) and p d is the power dissipation. the value for q la will vary and depends on the device mounting method. q la is generally 30 to 40 c/w for the various clips and tie points in common use and for printed circuit board wiring. the temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. the thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. using the measured value of t l , the junction temperature may be determined by: t j = t l + d t jl . d t jl is the increase in junction temperature above the lead temperature and may be found from figure 2 for dc power: d t jl = q jl p d . for worst-case design, using expected limits of i z , limits of p d and the extremes of t j ( d t j ) may be estimated. changes in voltage, v z , can then be found from: d v = q vz t j . q vz , the zener voltage temperature coefficient, is found from figures 4 and 5. under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. for best regulation, keep current excursions as low as possible. surge limitations are given in figure 7. they are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots, resulting in device degradation should the limits of figure 7 be exceeded. ll 500 400 300 200 100 0 0 0.2 0.4 0.6 0.8 1 2.4-60v 62-200v l, lead length to heat sink (inch) jl , junctiontolead thermal resistance ( c/w) q figure 2. typical thermal resistance typical leakage current at 80% of nominal breakdown voltage +25 c +125 c 1000 7000 5000 2000 1000 700 500 200 100 70 50 20 10 7 5 2 1 0.7 0.5 0.2 0.1 0.07 0.05 0.02 0.01 0.007 0.005 0.002 0.001 3 4 5 6 7 8 910 1112131415 v z , nominal zener voltage (volts) i , leakage current ( a) m r figure 3. typical leakage current
1n5221b series http://onsemi.com 211 +12 +10 +8 +6 +4 +2 0 -2 -4 2345 678 9101112 v z , zener voltage (volts) figure 4a. range for units to 12 volts v z @i zt (note 2) range temperature coefficients (55 c to +150 c temperature range; 90% of the units are in the ranges indicated.) 100 70 50 30 20 10 7 5 3 2 1 2 3 4 5 6 7 8 9 10 11 12 10 20 30 50 70 100 v z , zener voltage (volts) figure 4b. range for units 12 to 100 volts range v z @i z (note 2) 120 130 140 150 160 170 180 190 200 200 180 160 140 120 100 v z , zener voltage (volts) figure 4c. range for units 120 to 200 volts v z @i zt (note 2) +6 +4 +2 0 -2 -4 3 4 56 78 v z , zener voltage (volts) figure 5. effect of zener current note: below 3 volts and above 8 volts note: changes in zener current do not note: affect temperature coefficients 1ma 0.01ma v z @i z t a =25 c 1000 c, capacitance (pf) 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 v z , zener voltage (volts) figure 6a. typical capacitance 2.4100 volts t a =25 c 0v bias 1v bias 50% of v z bias 100 70 50 30 20 10 7 5 3 2 1 120 140 160 180 190 200 220 v z , zener voltage (volts) figure 6b. typical capacitance 120200 volts t a =25 c 1voltbias 50% of v z bias 0 bias q v z , temperature coefficient (mv/ c) 20ma c, capacitance (pf) q v z , temperature coefficient (mv/ c) q v z , temperature coefficient (mv/ c) q v z , temperature coefficient (mv/ c)
1n5221b series http://onsemi.com 212 100 70 50 30 20 10 7 5 3 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 p pk , peak surge power (watts) pw, pulse width (ms) 5% duty cycle 10% duty cycle 20% duty cycle 11v-91v nonrepetitive 1.8v-10v nonrepetitive rectangular waveform t j =25 c prior to initial pulse figure 7a. maximum surge power 1.891 volts 1000 700 500 300 200 100 70 50 30 20 10 7 5 3 2 1 0.01 0.1 1 10 100 1000 p pk , peak surge power (watts) pw, pulse width (ms) figure 7b. maximum surge power do-204ah 100200 volts 1000 500 200 100 50 20 10 1 2 5 0.1 0.2 0.5 1 2 5 10 20 50 100 i z , zener current (ma) figure 8. effect of zener current on zener impedance z z , dynamic impedance (ohms) z z , dynamic impedance (ohms) 1000 700 500 200 100 70 50 20 10 7 5 2 1 1 2 3 5 7 10 20 30 50 70 100 v z , zener voltage (volts) figure 9. effect of zener voltage on zener impedance figure 10. typical forward characteristics rectangular waveform, t j =25 c 100-200volts nonrepetitive t j =25 c i z (rms)=0.1 i z (dc) f=60hz i z =1ma 5ma 20ma t j =25 c i z (rms)=0.1 i z (dc) f=60hz v z =2.7v 47v 27v 6.2v v f , forward voltage (volts) 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1000 500 200 100 50 20 10 5 2 1 i f , forward current (ma) minimum maximum 150 c 75 c 0 c 25 c
1n5221b series http://onsemi.com 213 figure 11. zener voltage versus zener current e v z = 1 thru 16 volts v z , zener voltage (volts) i z , zener current (ma) 20 10 1 0.1 0.01 1 2 34 56 7 8 910111213141516 t a =25 figure 12. zener voltage versus zener current e v z = 15 thru 30 volts v z , zener voltage (volts) 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 10 1 0.1 0.01 t a =25 i z , zener current (ma)
1n5221b series http://onsemi.com 214 figure 13. zener voltage versus zener current e v z = 30 thru 105 volts v z , zener voltage (volts) 10 1 0.1 0.01 30 35 40 45 50 55 60 70 75 80 85 90 95 100 figure 14. zener voltage versus zener current e v z = 110 thru 220 volts v z , zener voltage (volts) 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260 10 1 0.1 0.01 t a =25 65 105 i z , zener current (ma) i z , zener current (ma)
? semiconductor components industries, llc, 2000 november, 2000 rev. 1 215 publication order number: 1n4728a/d 1n4728a series 1 watt do-41 hermetically sealed glass zener voltage regulator diodes this is a complete series of 1 watt zener diode with limits and excellent operating characteristics that reflect the superior capabilities of siliconoxide passivated junctions. all this in an axiallead hermetically sealed glass package that offers protection in all common environmental conditions. specification features: ? zener voltage range 3.3 v to 91 v ? esd rating of class 3 (>16 kv) per human body model ? do41 (do204al) package ? double slug type construction ? metallurgical bonded construction ? oxide passivated die mechanical characteristics: case: double slug type, hermetically sealed glass finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 230 c, 1/16 from the case for 10 seconds polarity: cathode indicated by polarity band mounting position: any maximum ratings rating symbol value unit max. steady state power dissipation @ t l 50 c, lead length = 3/8 derated above 50 c p d 1.0 6.67 watt mw/ c operating and storage temperature range t j , t stg 65 to +200 c devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. device package shipping ordering information (1.)(no tag) 1n47xxa axial lead 2000 units/box 1n47xxarl axial lead axial lead case 59 glass http://onsemi.com 6000/tape & reel cathode anode 1n47xxarl2 axial lead 6000/tape & reel 1n47xxata axial lead 4000/ammo pack 1n47xxata2 axial lead 4000/ammo pack 1. the a2o suffix refers to 26 mm tape spacing. notes: l 1n 47 xxa yww l = assembly location 1n47xxa = device code y = year ww = work week
zener voltage regulator i f v i i r i zt v r v z v f 1n4728a series http://onsemi.com 216 electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.2 v max., i f = 200 ma for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r breakdown voltage i f forward current v f forward voltage @ i f i r surge current @ t a = 25 c electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.2 v max, i f = 200 ma for all types) zener voltage (3.)(4.) zener impedance (5.) leakage current jedec v z (volts) @ i zt z zt @i zt z zk @i zk i r @ v r i r (6.) jedec device (2.) min nom max (ma) ( ) ( ) (ma) ( m a max) (volts) (ma) 1n4728a 3.14 3.3 3.47 76 10 400 1 100 1 1380 1n4729a 3.42 3.6 3.78 69 10 400 1 100 1 1260 1n4730a 3.71 3.9 4.10 64 9 400 1 50 1 1190 1n4731a 4.09 4.3 4.52 58 9 400 1 10 1 1070 1n4732a 4.47 4.7 4.94 53 8 500 1 10 1 970 1n4733a 4.85 5.1 5.36 49 7 550 1 10 1 890 1n4734a 5.32 5.6 5.88 45 5 600 1 10 2 810 1n4735a 5.89 6.2 6.51 41 2 700 1 10 3 730 1n4736a 6.46 6.8 7.14 37 3.5 700 1 10 4 660 1n4737a 7.13 7.5 7.88 34 4 700 0.5 10 5 605 1n4738a 7.79 8.2 8.61 31 4.5 700 0.5 10 6 550 1n4739a 8.65 9.1 9.56 28 5 700 0.5 10 7 500 1n4740a 9.50 10 10.50 25 7 700 0.25 10 7.6 454 1n4741a 10.45 11 11.55 23 8 700 0.25 5 8.4 414 1n4742a 11.40 12 12.60 21 9 700 0.25 5 9.1 380 1n4743a 12.4 13 13.7 19 10 700 0.25 5 9.9 344 1n4744a 14.3 15 15.8 17 14 700 0.25 5 11.4 304 1n4745a 15.2 16 16.8 15.5 16 700 0.25 5 12.2 285 tolerance and type number designation 2. the jedec type numbers listed have a standard tolerance on the nominal zener voltage of 5%. specials available include: 3. nominal zener voltages between the voltages shown and tighter voltage tolerances. for detailed information on price, availabi lity, and delivery, contact your nearest on semiconductor representative. zener voltage (v z ) measurement 4. on semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (t l ) at 30 c 1 c, 3/8 from the diode body. zener impedance (z z ) derivation 5. the zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms value equal to 10 % of the dc zener current (i zt or i zk ) is superimposed on i zt or i zk . surge current (i r ) non-repetitive 6. the rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 squar e wave or equiv- alent sine wave pulse of 1/120 second duration superimposed on the test current, i zt , per jedec registration; however, actual device capability is as described in figure 5 of the general data do-41 glass.
1n4728a series http://onsemi.com 217 electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.2 v max, i f = 200 ma for all types) (continued) zener voltage (8.)(9.) zener impedance (10.) leakage current jedec v z (volts) @ i zt z zt @i zt z zk @i zk i r @ v r i r (11.) jedec device (7.) min nom max (ma) ( ) ( ) (ma) ( m a max) (volts) (ma) 1n4746a 17.1 18 18.9 14 20 750 0.25 5 13.7 250 1n4747a 19.0 20 21.0 12.5 22 750 0.25 5 15.2 225 1n4748a 20.9 22 23.1 11.5 23 750 0.25 5 16.7 205 1n4749a 22.8 24 25.2 10.5 25 750 0.25 5 18.2 190 1n4750a 25.7 27 28.4 9.5 35 750 0.25 5 20.6 170 1n4751a 28.5 30 31.5 8.5 40 1000 0.25 5 22.8 150 1n4752a 31.4 33 34.7 7.5 45 1000 0.25 5 25.1 135 1n4753a 34.2 36 37.8 7 50 1000 0.25 5 27.4 125 1n4754a 37.1 39 41.0 6.5 60 1000 0.25 5 29.7 115 1n4755a 40.9 43 45.2 6 70 1500 0.25 5 32.7 110 1n4756a 44.7 47 49.4 5.5 80 1500 0.25 5 35.8 95 1n4757a 48.5 51 53.6 5 95 1500 0.25 5 38.8 90 1n4758a 53.2 56 58.8 4.5 110 2000 0.25 5 42.6 80 1n4759a 58.9 62 65.1 4 125 2000 0.25 5 47.1 70 1n4760a 64.6 68 71.4 3.7 150 2000 0.25 5 51.7 65 1n4761a 71.3 75 78.8 3.3 175 2000 0.25 5 56 60 1n4762a 77.9 82 86.1 3 200 3000 0.25 5 62.2 55 1n4763a 86.5 91 95.6 2.8 250 3000 0.25 5 69.2 50 tolerance and type number designation 7. the jedec type numbers listed have a standard tolerance on the nominal zener voltage of 5%. specials available include: 8. nominal zener voltages between the voltages shown and tighter voltage tolerances. for detailed information on price, availabi lity, and delivery, contact your nearest on semiconductor representative. zener voltage (v z ) measurement 9. on semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (t l ) at 30 c 1 c, 3/8 from the diode body. zener impedance (z z ) derivation 10. the zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms value equal to 1 0% of the dc zener current (i zt or i zk ) is superimposed on i zt or i zk . surge current (i r ) non-repetitive 11. the rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 squa re wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, i zt , per jedec registration; however, actual device capability is as described in figure 5 of the general data do-41 glass. figure 1. power temperature derating curve t l , lead temperature ( c) p d 0 20 40 60 200 80 100 120 140 160 180 0.25 0.5 0.75 1 1.25 l = lead length to heat sink l = 3/8 l = 1/8 l = 1 , maximum steady state power dissipation (watts)
1n4728a series http://onsemi.com 218 figure 2. temperature coefficients (55 c to +150 c temperature range; 90% of the units are in the ranges indicated.) a. range for units to 12 volts b. range for units to 12 to 100 volts +12 +10 +8 +6 +4 +2 0 -2 -4 23456789101112 v z , zener voltage (volts) q v z , temperature coefficient (mv/ c) 100 70 50 30 20 10 7 5 3 2 1 10 20 30 50 70 100 v z , zener voltage (volts) q v z , temperature coefficient (mv/ c) v z @i zt range range v z @i zt figure 3. typical thermal resistance versus lead length figure 4. effect of zener current 175 150 125 100 75 50 25 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 l, lead length to heat sink (inches) q jl , junctiontolead thermal resistance (mv/ c/w) q v z , temperature coefficient (mv/ c) +6 +4 +2 0 -2 -4 34 5678 v z , zener voltage (volts) v z @i z t a =25 c 20ma 0.01ma 1ma note: below 3 volts and above 8 volts note: changes in zener current do not note: effect temperature coefficients figure 5. maximum surge power 100 70 50 30 20 10 7 5 3 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 pw, pulse width (ms) this graph represents 90 percentile data points. for worst case design characteristics, multiply surge power by 2/3. p pk , peak surge power (watts) 11v-100v nonrepetitive 3.3v-10v nonrepetitive 5% duty cycle 10% duty cycle 20% duty cycle rectangular waveform t j =25 c prior to initial pulse
1n4728a series http://onsemi.com 219 v f , forward voltage (volts) 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1000 500 200 100 50 20 10 5 2 1 i f , forward current (ma) maximum 150 c 75 c 0 c 25 c figure 6. effect of zener current on zener impedance figure 7. effect of zener voltage on zener impedance figure 8. typical leakage current 1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 i z , zener current (ma) z z , dynamic impedance (ohms) 1000 700 500 200 100 70 50 20 10 7 5 2 1 1 2 100 v z , zener voltage (v) 35710 20305070 z z , dynamic impedance (ohms) 10000 7000 5000 2000 1000 700 500 200 100 70 50 20 10 7 5 2 1 0.7 0.5 0.2 0.1 0.07 0.05 0.02 0.01 0.007 0.005 0.002 0.001 i r , leakage current ( m a) 3456789101112131415 v z , nominal zener voltage (volts) +25 c +125 c typical leakage current at 80% of nominal breakdown voltage t j = 25 c i z (rms) = 0.1 i z (dc) f = 60 hz 6.2 v 27 v v z = 2.7 v 47 v t j = 25 c i z (rms) = 0.1 i z (dc) f = 60 hz 20 ma 5 ma i z = 1 ma 0 v bias 1 v bias 400 300 200 100 50 20 10 8 4 1 2 5 10 20 50 100 v z , nominal v z (volts) c, capacitance (pf) 50% of breakdown bias minimum figure 9. typical capacitance versus v z figure 10. typical forward characteristics
1n4728a series http://onsemi.com 220 application note since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. the following procedure is recommended: lead temperature, t l , should be determined from: t l = q la p d + t a . q la is the lead-to-ambient thermal resistance ( c/w) and p d is the power dissipation. the value for q la will vary and depends on the device mounting method. q la is generally 30 to 40 c/w for the various clips and tie points in common use and for printed circuit board wiring. the temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. the thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. using the measured value of t l , the junction temperature may be determined by: t j = t l + d t jl . d t jl is the increase in junction temperature above the lead temperature and may be found as follows: d t jl = q jl p d . q jl may be determined from figure 3 for dc power conditions. for worst-case design, using expected limits of i z , limits of p d and the extremes of t j ( d t j ) may be estimated. changes in voltage, v z , can then be found from: d v = q vz d t j . q vz , the zener voltage temperature coefficient, is found from figure 2. under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. for best regulation, keep current excursions as low as possible. surge limitations are given in figure 5. they are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots, resulting in device degradation should the limits of figure 5 be exceeded.
? semiconductor components industries, llc, 2001 may, 2001 rev. 0 221 publication order number: bzx85c3v3rl/d bzx85c3v3rl series 1 watt do-41 hermetically sealed glass zener voltage regulators this is a complete series of 1 watt zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of siliconoxide passivated junctions. all this in an axiallead hermetically sealed glass package that offers protection in all common environmental conditions. specification features: ? zener voltage range 3.3 v to 85 v ? esd rating of class 3 (>16 kv) per human body model ? do41 (do204al) package ? double slug type construction ? metallurgical bonded construction ? oxide passivated die mechanical characteristics: case: double slug type, hermetically sealed glass finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 230 c, 1/16 from the case for 10 seconds polarity: cathode indicated by polarity band mounting position: any maximum ratings rating symbol value unit max. steady state power dissipation @ t l 50 c, lead length = 3/8 derate above 50 c p d 1 6.67 w mw/ c operating and storage temperature range t j , t stg 65 to +200 c device package shipping ordering information bzx85cxxxrl axial lead 6000/tape & reel bzx85cxxxrl2 axial lead axial lead case 59 glass http://onsemi.com 6000/tape & reel cathode anode * the a2o suffix refers to 26 mm tape spacing. l bzx 85c xxx yww l = assembly location bzx85cxxx = device code = (see table next page) y = year ww = work week marking diagram
zener voltage regulator i f v i i r i zt v r v z v f bzx85c3v3rl series http://onsemi.com 222 electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.2 v max., i f = 200 ma for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r breakdown voltage i f forward current v f forward voltage @ i f i r surge current @ t a = 25 c
bzx85c3v3rl series http://onsemi.com 223 electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.2 v max., i f = 200 ma for all types) zener voltage (notes 2. and 3.) zener impedance (note 4.) leakage current i r device device v z (volts) @ i zt z zt @ i zt z zk @ i zk i r @ v r i r (note 5.) d ev i ce (note 1.) d ev i ce marking min nom max ma ma m a max volts ma bzx85c3v3rl bzx85c3v3 3.1 3.3 3.5 80 20 400 1 1 60 1380 bzx85c3v6rl bzx85c3v6 3.4 3.6 3.8 60 15 500 1 1 30 1260 bzx85c3v9rl bzx85c3v9 3.7 3.9 4.1 60 15 500 1 1 5 1190 bzx85c4v3rl bzx85c4v3 4.0 4.3 4.6 50 13 500 1 1 3 1070 bzx85c4v7rl bzx85c4v7 4.4 4.7 5.0 45 13 600 1 1.5 3 970 bzx85c5v1rl bzx85c5v1 4.8 5.1 5.4 45 10 500 1 2 1 890 bzx85c5v6rl bzx85c5v6 5.2 5.6 6.0 45 7 400 1 2 1 810 bzx85c6v2rl bzx85c6v2 5.8 6.2 6.6 35 4 300 1 3 1 730 bzx85c6v8rl bzx85c6v8 6.4 6.8 7.2 35 3.5 300 1 4 1 660 bzx85c7v5rl bzx85c7v5 7.0 7.45 7.9 35 3 200 0.5 4.5 1 605 bzx85c8v2rl bzx85c8v2 7.7 8.2 8.7 25 5 200 0.5 5 1 550 bzx85c9v1rl bzx85c9v1 8.5 9.05 9.6 25 5 200 0.5 6.5 1 500 bzx85c10rl bzx85c10 9.4 10 10.6 25 7 200 0.5 7 0.5 454 bzx85c12rl bzx85c12 11.4 12.05 12.7 20 9 350 0.5 8.4 0.5 380 bzx85c13rl bzx85c13 12.4 13.25 14.1 20 10 400 0.5 9.1 0.5 344 bzx85c15rl bzx85c15 13.8 14.7 15.6 15 15 500 0.5 10.5 0.5 304 bzx85c16rl bzx85c16 15.3 16.2 17.1 15 15 500 0.5 11 0.5 285 bzx85c18rl bzx85c18 16.8 17.95 19.1 15 20 500 0.5 12.5 0.5 250 bzx85c22rl bzx85c22 20.8 22.05 23.3 10 25 600 0.5 15.5 0.5 205 bzx85c24rl bzx85c24 22.8 24.2 25.6 10 25 600 0.5 17 0.5 190 bzx85c27rl bzx85c27 25.1 27 28.9 8 30 750 0.25 19 0.5 170 bzx85c30rl bzx85c30 28 30 32 8 30 1000 0.25 21 0.5 150 bzx85c33rl bzx85c33 31 33 35 8 35 1000 0.25 23 0.5 135 bzx85c36rl bzx85c36 34 36 38 8 40 1000 0.25 25 0.5 125 bzx85c43rl bzx85c43 40 43 46 6 50 1000 0.25 30 0.5 110 bzx85c47rl bzx85c47 44 47 50 4 90 1500 0.25 33 0.5 95 bzx85c62rl bzx85c62 58 62 66 4 125 2000 0.25 43 0.5 70 bzx85c75rl bzx85c75 70 75 80 4 150 2000 0.25 51 0.5 60 bzx85c82rl bzx85c82 77 82 87 2.7 200 3000 0.25 56 0.5 55 1. tolerance and type number designation the type numbers listed have zener voltage min/max limits as shown and have a standard tolerance on the nominal zener voltage o f 5%. 2. availability of special diodes for detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter v oltage tolerances, contact your nearest on semiconductor representative. 3. zener voltage (v z ) measurement v z measured after the test current has been applied to 40 10 msec, while maintaining the lead temperature (t l ) at 30 c 1 c, 3/8 from the diode body. 4. zener impedance (z z ) derivation the zener impedance is derived from 1 khz cycle ac voltage, which results when an ac current having an rms value equal to 10% o f the dc zener current (i zt or i zk ) is superimposed on i zt or i zk . 5. surge current (i r ) nonrepetitive the rating listed in the electrical characteristics table is maximum peak, nonrepetitive, reverse surge current of 1/2 square wave or eqivalent sine wave pulse of 1/120 second duration superimposed on the test current, i zt . however, actual device capability is as described in figure 5 of the general data do41 glass.
bzx85c3v3rl series http://onsemi.com 224 figure 1. power temperature derating curve t l , lead temperature ( c) 0 20 40 60 200 80 100 120 140 160 180 0.25 0.5 0.75 1 1.25 l = lead length to heat sink l = 3/8 l = 1/8 l = 1 p d , steady state power dissipation (watts)
bzx85c3v3rl series http://onsemi.com 225 figure 2. temperature coefficients (55 c to +150 c temperature range; 90% of the units are in the ranges indicated.) a. range for units to 12 volts b. range for units to 12 to 100 volts +12 +10 +8 +6 +4 +2 0 -2 -4 23456789101112 v z , zener voltage (volts) q v z , temperature coefficient (mv/ c) 100 70 50 30 20 10 7 5 3 2 1 10 20 30 50 70 100 v z , zener voltage (volts) q v z , temperature coefficient (mv/ c) v z @i zt range range v z @i zt figure 3. typical thermal resistance versus lead length figure 4. effect of zener current 175 150 125 100 75 50 25 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 l, lead length to heat sink (inches) q jl , junctiontolead thermal resistance (mv/ c/w) q v z , temperature coefficient (mv/ c) +6 +4 +2 0 -2 -4 34 5678 v z , zener voltage (volts) v z @i z t a =25 c 20ma 0.01ma 1ma note: below 3 volts and above 8 volts note: changes in zener current do not note: effect temperature coefficients figure 5. maximum surge power 100 70 50 30 20 10 7 5 3 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 pw, pulse width (ms) this graph represents 90 percentile data points. for worst case design characteristics, multiply surge power by 2/3. p pk , peak surge power (watts) 11v-100v nonrepetitive 3.3v-10v nonrepetitive 5% duty cycle 10% duty cycle 20% duty cycle rectangular waveform t j =25 c prior to initial pulse
bzx85c3v3rl series http://onsemi.com 226 v f , forward voltage (volts) 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1000 500 200 100 50 20 10 5 2 1 i f , forward current (ma) maximum 150 c 75 c 0 c 25 c figure 6. effect of zener current on zener impedance figure 7. effect of zener voltage on zener impedance figure 8. typical leakage current 1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 i z , zener current (ma) z z , dynamic impedance (ohms) 1000 700 500 200 100 70 50 20 10 7 5 2 1 1 2 100 v z , zener voltage (v) 35710 20305070 z z , dynamic impedance (ohms) 10000 7000 5000 2000 1000 700 500 200 100 70 50 20 10 7 5 2 1 0.7 0.5 0.2 0.1 0.07 0.05 0.02 0.01 0.007 0.005 0.002 0.001 i r , leakage current ( m a) 3456789101112131415 v z , nominal zener voltage (volts) +25 c +125 c typical leakage current at 80% of nominal breakdown voltage t j = 25 c i z (rms) = 0.1 i z (dc) f = 60 hz 6.2 v 27 v v z = 2.7 v 47 v t j = 25 c i z (rms) = 0.1 i z (dc) f = 60 hz 20 ma 5 ma i z = 1 ma 0 v bias 1 v bias 400 300 200 100 50 20 10 8 4 1 2 5 10 20 50 100 v z , nominal v z (volts) c, capacitance (pf) 50% of breakdown bias minimum figure 9. typical capacitance versus v z figure 10. typical forward characteristics
bzx85c3v3rl series http://onsemi.com 227 application note since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. the following procedure is recommended: lead temperature, t l , should be determined from: t l = q la p d + t a . q la is the lead-to-ambient thermal resistance ( c/w) and p d is the power dissipation. the value for q la will vary and depends on the device mounting method. q la is generally 30 to 40 c/w for the various clips and tie points in common use and for printed circuit board wiring. the temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. the thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. using the measured value of t l , the junction temperature may be determined by: t j = t l + d t jl . d t jl is the increase in junction temperature above the lead temperature and may be found as follows: d t jl = q jl p d . q jl may be determined from figure 3 for dc power conditions. for worst-case design, using expected limits of i z , limits of p d and the extremes of t j ( d t j ) may be estimated. changes in voltage, v z , can then be found from: d v = q vz d t j . q vz , the zener voltage temperature coefficient, is found from figure 2. under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. for best regulation, keep current excursions as low as possible. surge limitations are given in figure 5. they are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots, resulting in device degradation should the limits of figure 5 be exceeded.
? semiconductor components industries, llc, 2001 may, 2001 rev. 1 228 publication order number: 1n5913b/d 1n5913b series 3 watt do-41 surmetic 30 zener voltage regulators this is a complete series of 3 watt zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of siliconoxide passivated junctions. all this in an axiallead, transfermolded plastic package that offers protection in all common environmental conditions. specification features: ? zener voltage range 3.3 v to 200 v ? esd rating of class 3 (>16 kv) per human body model ? surge rating of 98 w @ 1 ms ? maximum limits guaranteed on up to six electrical parameters ? package no larger than the conventional 1 watt package mechanical characteristics: case: void free, transfermolded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 230 c, 1/16 from the case for 10 seconds polarity: cathode indicated by polarity band mounting position: any maximum ratings rating symbol value unit max. steady state power dissipation @ t l = 75 c, lead length = 3/8 derate above 75 c p d 3 24 w mw/ c steady state power dissipation @ t a = 50 c derate above 50 c p d 1 6.67 w mw/ c operating and storage temperature range t j , t stg 65 to +200 c device package shipping ordering information 1n59xxb axial lead 2000 units/box 1n59xxbrl axial lead axial lead case 59 plastic http://onsemi.com 6000/tape & reel cathode anode polarity band up with cathode lead off first polarity band down with cathode lead off first l 1n59 xxb yyww l = assembly location 1n59xxb = device code = (see table next page) yy = year ww = work week marking diagram 1n59xxbrr1 axial lead 2000/tape & reel 1n59xxbrr2 axial lead 2000/tape & reel devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value.
zener voltage regulator i f v i i r i zt v r v z v f 1n5913b series http://onsemi.com 229 electrical characteristics (t l = 30 c unless otherwise noted, v f = 1.5 v max @ i f = 200 madc for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r breakdown voltage i f forward current v f forward voltage @ i f i zm maximum dc zener current
1n5913b series http://onsemi.com 230 electrical characteristics (t l = 30 c unless otherwise noted, v f = 1.5 v max @ i f = 200 madc for all types) zener voltage (note 2.) zener impedance (note 3.) leakage current device device v z (volts) @ i zt z zt @ i zt z zk @ i zk i r @ v r i zm d ev i ce (note 1.) d ev i ce marking min nom max ma ma m a max volts ma 1n5913b 1n5913b 3.14 3.3 3.47 113.6 10 500 1 100 1 454 1n5917b 1n5917b 4.47 4.7 4.94 79.8 5 500 1 5 1.5 319 1n5919b 1n5919b 5.32 5.6 5.88 66.9 2 250 1 5 3 267 1n5920b 1n5920b 5.89 6.2 6.51 60.5 2 200 1 5 4 241 1n5921b 1n5921b 6.46 6.8 7.14 55.1 2.5 200 1 5 5.2 220 1n5923b 1n5923b 7.79 8.2 8.61 45.7 3.5 400 0.5 5 6.5 182 1n5924b 1n5924b 8.65 9.1 9.56 41.2 4 500 0.5 5 7 164 1n5925b 1n5925b 9.50 10 10.50 37.5 4.5 500 0.25 5 8 150 1n5926b 1n5926b 10.45 11 11.55 34.1 5.5 550 0.25 1 8.4 136 1n5927b 1n5927b 11.40 12 12.60 31.2 6.5 550 0.25 1 9.1 125 1n5929b 1n5929b 14.25 15 15.75 25.0 9 600 0.25 1 11.4 100 1n5930b 1n5930b 15.20 16 16.80 23.4 10 600 0.25 1 12.2 93 1n5931b 1n5931b 17.10 18 18.90 20.8 12 650 0.25 1 13.7 83 1n5932b 1n5932b 19.00 20 21.00 18.7 14 650 0.25 1 15.2 75 1n5933b 1n5933b 20.90 22 23.10 17.0 17.5 650 0.25 1 16.7 68 1n5934b 1n5934b 22.80 24 25.20 15.6 19 700 0.25 1 18.2 62 1n5935b 1n5935b 25.65 27 28.35 13.9 23 700 0.25 1 20.6 55 1n5936b 1n5936b 28.50 30 31.50 12.5 28 750 0.25 1 22.8 50 1n5937b 1n5937b 31.35 33 34.65 11.4 33 800 0.25 1 25.1 45 1n5938b 1n5938b 34.20 36 37.80 10.4 38 850 0.25 1 27.4 41 1n5940b 1n5940b 40.85 43 45.15 8.7 53 950 0.25 1 32.7 34 1n5941b 1n5941b 44.65 47 49.35 8.0 67 1000 0.25 1 35.8 31 1n5942b 1n5942b 48.45 51 53.55 7.3 70 1100 0.25 1 38.8 29 1n5943b 1n5943b 53.20 56 58.80 6.7 86 1300 0.25 1 42.6 26 1n5944b 1n5944b 58.90 62 65.10 6.0 100 1500 0.25 1 47.1 24 1n5945b 1n5945b 64.60 68 71.40 5.5 120 1700 0.25 1 51.7 22 1n5946b 1n5946b 71.25 75 78.75 5.0 140 2000 0.25 1 56 20 1n5947b 1n5947b 77.90 82 86.10 4.6 160 2500 0.25 1 62.2 18 1n5948b 1n5948b 86.45 91 95.55 4.1 200 3000 0.25 1 69.2 16 1n5950b 1n5950b 104.5 110 115.5 3.4 300 4000 0.25 1 83.6 13 1n5951b 1n5951b 114 120 126 3.1 380 4500 0.25 1 91.2 12 1n5952b 1n5952b 123.5 130 136.5 2.9 450 5000 0.25 1 98.8 11 1n5953b 1n5953b 142.5 150 157.5 2.5 600 6000 0.25 1 114 10 1n5954b 1n5954b 152 160 168 2.3 700 6500 0.25 1 121.6 9 1n5955b 1n5955b 171 180 189 2.1 900 7000 0.25 1 136.8 8 1n5956b 1n5956b 190 200 210 1.9 1200 8000 0.25 1 152 7 1. tolerance and type number designation tolerance designation device tolerance of 5% are indicated by a abo suffix. 2. zener voltage (v z ) measurement on semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (t l ) at 30 c 1 c, 3/8 from the diode body. 3. zener impedance (z z ) derivation the zener impedance is derived from 60 seconds ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (i zt or i zk ) is superimposed on i zt or i zk .
1n5913b series http://onsemi.com 231 figure 1. power temperature derating curve t l , lead temperature ( c) 0 20 40 60 200 80 100 120 140 160 180 0 1 2 3 4 5 l = 1/8 l = 3/8 l = 1 l = lead length to heat sink p d , steady state dissipation (watts) t, time (seconds) 0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.3 0.5 0.7 1 2 3 5 7 10 20 30 d =0.5 0.2 0.1 0.05 0.01 d = 0 duty cycle, d =t 1 /t 2 q jl (t, d) transient thermal resistance junctiontolead ( c/w) p pk t 1 note: below 0.1 second, thermal response curve is applicable to any lead length (l). single pulse d t jl = q jl (t)p pk repetitive pulses d t jl = q jl (t,d)p pk t 2 0.02 10 20 30 50 100 200 300 500 1k 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 pw, pulse width (ms) p , peak surge power (watts) pk 1 2 5 10 20 50 100 200 400 1000 0.0003 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 t a = 125 c t a = 125 c nominal v z (volts) as specified in elec. char. table figure 2. typical thermal response l, lead length = 3/8 inch figure 3. maximum surge power figure 4. typical reverse leakage i r , reverse leakage ( m adc) @ v r rectangular nonrepetitive waveform t j =25 c prior to initial pulse
1n5913b series http://onsemi.com 232 application note since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. the following procedure is recommended: lead temperature, t l , should be determined from: t l = q la p d + t a q la is the lead-to-ambient thermal resistance ( c/w) and p d is the power dissipation. the value for q la will vary and depends on the device mounting method. q la is generally 3040 c/w for the various clips and tie points in common use and for printed circuit board wiring. the temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. the thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. using the measured value of t l , the junction temperature may be determined by: t j = t l + d t jl d t jl is the increase in junction temperature above the lead temperature and may be found from figure 2 for a train of power pulses (l = 3/8 inch) or from figure 10 for dc power. d t jl = q jl p d for worst-case design, using expected limits of i z , limits of p d and the extremes of t j ( d t j ) may be estimated. changes in voltage, v z , can then be found from: d v = q vz d t j q vz , the zener voltage temperature coefficient, is found from figures 5 and 6. under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. for best regulation, keep current excursions as low as possible. data of figure 2 should not be used to compute surge capability. surge limitations are given in figure 3. they are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of figure 3 be exceeded.
1n5913b series http://onsemi.com 233 figure 5. units to 12 volts figure 6. units 10 to 400 volts figure 7. v z = 3.3 thru 10 volts figure 8. v z = 12 thru 82 volts figure 9. v z = 100 thru 400 volts figure 10. typical thermal resistance zener voltage versus zener current (figures 7, 8 and 9) temperature coefficient ranges (90% of the units are in the ranges indicated) v z , zener voltage @ i zt (volts) 34 5 6 789101112 10 8 6 4 2 0 -2 -4 range , temperature coefficient (mv/ c) @ i zt vz q 1000 500 200 100 50 20 10 10 20 50 100 200 400 1000 v z , zener voltage @ i zt (volts) , temperature coefficient (mv/ c) @ i zt vz q 01 234 56 7 8910 100 50 30 20 10 1 0.5 0.3 0.2 0.1 v z , zener voltage (volts) i , zener current (ma) z 2 5 3 0102030405060708090100 v z , zener voltage (volts) i , zener current (ma) z 100 50 30 20 10 1 0.5 0.3 0.2 0.1 2 5 3 100 200 300 400 250 350 150 10 1 0.5 0.2 0.1 v z , zener voltage (volts) 2 5 i , zener current (ma) z 0 10 20 30 40 50 60 70 80 l, lead length to heat sink (inch) primary path of conduction is through the cathode lead 0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1 t l jl , junctiontolead thermal resistance q l l ( c/w)
? semiconductor components industries, llc, 2001 may, 2001 rev. 1 234 publication order number: 3ez4.3d5/d 3ez4.3d5 series 3 watt do-41 surmetic 30 zener voltage regulators this is a complete series of 3 watt zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of siliconoxide passivated junctions. all this in an axiallead, transfermolded plastic package that offers protection in all common environmental conditions. specification features: ? zener voltage range 4.3 v to 330 v ? esd rating of class 3 (>16 kv) per human body model ? surge rating of 98 w @ 1 ms ? maximum limits guaranteed on up to six electrical parameters ? package no larger than the conventional 1 watt package mechanical characteristics: case: void free, transfermolded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 230 c, 1/16 from the case for 10 seconds polarity: cathode indicated by polarity band mounting position: any maximum ratings rating symbol value unit max. steady state power dissipation @ t l = 75 c, lead length = 3/8 derate above 75 c p d 3 24 w mw/ c steady state power dissipation @ t a = 50 c derate above 50 c p d 1 6.67 w mw/ c operating and storage temperature range t j , t stg 65 to +200 c device package shipping ordering information 3ezxxxd5 axial lead 2000 units/box 3ezxxxd5rl axial lead axial lead case 59 plastic http://onsemi.com 6000/tape & reel cathode anode polarity band up with cathode lead off first polarity band down with cathode lead off first l 3ezx xxd5 yyww l = assembly location 3ezxxxd5 = device code = (see table next page) yy = year ww = work week marking diagram 3ezxxxd5rr1 axial lead 2000/tape & reel 3ezxxxd5rr2 axial lead 2000/tape & reel
zener voltage regulator i f v i i r i zt v r v z v f 3ez4.3d5 series http://onsemi.com 235 electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.5 v max @ i f = 200 ma for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r breakdown voltage i f forward current v f forward voltage @ i f i zm maximum dc zener current i r surge current @ t a = 25 c
3ez4.3d5 series http://onsemi.com 236 electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.5 v max @ i f = 200 ma for all types) zener voltage (note 2.) zener impedance (note 3.) leakage current i r device device v z (volts) @ i zt z zt @ i zt z zk @ i zk i r @ v r i zm i r (note 4.) d ev i ce (note 1.) d ev i ce marking min nom max ma ma m a max volts ma ma 3ez4.3d5 3ez4.3d5 4.09 4.3 4.52 174 4.5 400 1 30 1 590 4.1 3ez6.2d5 3ez6.2d5 5.89 6.2 6.51 121 1.5 700 1 5 3 435 3.1 3ez8.2d5 3ez8.2d5 7.79 8.2 8.61 91 2.3 700 0.5 5 6 330 2.44 3ez10d5 3ez10d5 9.50 10 10.5 75 3.5 700 0.25 3 7.6 270 2.0 3ez13d5 3ez13d5 12.35 13 13.65 58 4.5 700 0.25 0.5 9.9 208 1.54 3ez15d5 3ez15d5 14.25 15 15.75 50 5.5 700 0.25 0.5 11.4 180 1.33 3ez16d5 3ez16d5 15.2 16 16.8 47 5.5 700 0.25 0.5 12.2 169 1.25 3ez18d5 3ez18d5 17.1 18 18.9 42 6.0 750 0.25 0.5 13.7 150 1.11 3ez24d5 3ez24d5 22.8 24 25.2 31 9.0 750 0.25 0.5 18.2 112 0.83 3ez36d5 3ez36d5 34.2 36 37.8 21 22 1000 0.25 0.5 27.4 75 0.56 3ez39d5 3ez39d5 37.05 39 40.95 19 28 1000 0.25 0.5 29.7 69 0.51 3ez220d5 3ez220d5 209 220 231 3.4 1600 9000 0.25 1 167 12 0.09 3ez240d5 3ez240d5 228 240 252 3.1 1700 9000 0.25 1 182 11 0.09 3ez330d5 3ez330d5 313.5 330 346.5 2.3 2200 9000 0.25 1 251 8 0.06 1. tolerance and type number designation tolerance designation device tolerance of 5% are indicated by a a5o suffix. 2. zener voltage (v z ) measurement on semiconductor guarantees the zener voltage when measured at 40 ms 10 ms, 3/8 from the diode body. and an ambient temperature of 25 c (+8 c, 2 c) 3. zener impedance (z z ) derivation the zener impedance is derived from 60 seconds ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (i zt or i zk ) is superimposed on i zt or i zk . 4. surge current (i r ) nonrepetitive the rating listed in the electrical characteristics table is maximum peak, nonrepetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, i zt , per jedec standards. however, actual device capability is as described in figure 3 of the general data sheet for surmetic 30s. figure 1. power temperature derating curve t l , lead temperature ( c) 0 20 40 60 200 80 100 120 140 160 180 0 1 2 3 4 5 l = 1/8 l = 3/8 l = 1 l = lead length to heat sink p d , steady state power dissipation (watts)
3ez4.3d5 series http://onsemi.com 237 t, time (seconds) 0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.3 0.5 0.7 1 2 3 5 7 10 20 30 d =0.5 0.2 0.1 0.05 0.01 d = 0 duty cycle, d =t 1 /t 2 q jl (t, d) transient thermal resistance junctiontolead ( c/w) p pk t 1 note: below 0.1 second, thermal response curve is applicable to any lead length (l). single pulse d t jl = q jl (t)p pk repetitive pulses d t jl = q jl (t,d)p pk t 2 0.02 10 20 30 50 100 200 300 500 1k 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 pw, pulse width (ms) p , peak surge power (watts) pk 1 2 5 10 20 50 100 200 400 1000 0.0003 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 t a = 125 c t a = 125 c nominal v z (volts) as specified in elec. char. table figure 2. typical thermal response l, lead length = 3/8 inch figure 3. maximum surge power figure 4. typical reverse leakage i r , reverse leakage ( m adc) @ v r rectangular nonrepetitive waveform t j =25 c prior to initial pulse
3ez4.3d5 series http://onsemi.com 238 application note since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. the following procedure is recommended: lead temperature, t l , should be determined from: t l = q la p d + t a q la is the lead-to-ambient thermal resistance ( c/w) and p d is the power dissipation. the value for q la will vary and depends on the device mounting method. q la is generally 3040 c/w for the various clips and tie points in common use and for printed circuit board wiring. the temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. the thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. using the measured value of t l , the junction temperature may be determined by: t j = t l + d t jl d t jl is the increase in junction temperature above the lead temperature and may be found from figure 2 for a train of power pulses (l = 3/8 inch) or from figure 10 for dc power. d t jl = q jl p d for worst-case design, using expected limits of i z , limits of p d and the extremes of t j ( d t j ) may be estimated. changes in voltage, v z , can then be found from: d v = q vz d t j q vz , the zener voltage temperature coefficient, is found from figures 5 and 6. under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. for best regulation, keep current excursions as low as possible. data of figure 2 should not be used to compute surge capability. surge limitations are given in figure 3. they are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of figure 3 be exceeded.
3ez4.3d5 series http://onsemi.com 239 figure 5. units to 12 volts figure 6. units 10 to 400 volts figure 7. v z = 3.3 thru 10 volts figure 8. v z = 12 thru 82 volts figure 9. v z = 100 thru 400 volts figure 10. typical thermal resistance zener voltage versus zener current (figures 7, 8 and 9) temperature coefficient ranges (90% of the units are in the ranges indicated) v z , zener voltage @ i zt (volts) 34 5 6 789101112 10 8 6 4 2 0 -2 -4 range , temperature coefficient (mv/ c) @ i zt vz q 1000 500 200 100 50 20 10 10 20 50 100 200 400 1000 v z , zener voltage @ i zt (volts) , temperature coefficient (mv/ c) @ i zt vz q 01 234 56 7 8910 100 50 30 20 10 1 0.5 0.3 0.2 0.1 v z , zener voltage (volts) i , zener current (ma) z 2 5 3 0102030405060708090100 v z , zener voltage (volts) i , zener current (ma) z 100 50 30 20 10 1 0.5 0.3 0.2 0.1 2 5 3 100 200 300 400 250 350 150 10 1 0.5 0.2 0.1 v z , zener voltage (volts) 2 5 i , zener current (ma) z 0 10 20 30 40 50 60 70 80 l, lead length to heat sink (inch) primary path of conduction is through the cathode lead 0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1 t l jl , junctiontolead thermal resistance q l l ( c/w)
? semiconductor components industries, llc, 2001 may, 2001 rev. 1 240 publication order number: mzp4729a/d mzp4729a series 3 watt do-41 surmetic 30 zener voltage regulators this is a complete series of 3 watt zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of siliconoxide passivated junctions. all this in an axiallead, transfermolded plastic package that offers protection in all common environmental conditions. specification features: ? zener voltage range 3.6 v to 30 v ? esd rating of class 3 (>16 kv) per human body model ? surge rating of 98 w @ 1 ms ? maximum limits guaranteed on up to six electrical parameters ? package no larger than the conventional 1 watt package mechanical characteristics: case: void free, transfermolded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 230 c, 1/16 from the case for 10 seconds polarity: cathode indicated by polarity band mounting position: any maximum ratings rating symbol value unit max. steady state power dissipation @ t l = 75 c, lead length = 3/8 derate above 75 c p d 3 24 w mw/ c steady state power dissipation @ t a = 50 c derate above 50 c p d 1 6.67 w mw/ c operating and storage temperature range t j , t stg 65 to +200 c device package shipping ordering information mzp47xxa axial lead 2000 units/box mzp47xxarl axial lead axial lead case 59 plastic http://onsemi.com 6000/tape & reel cathode anode polarity band up with cathode lead off first polarity band down with cathode lead off first l mzp4 7xxa yyww l = assembly location mzp47xxa = device code = (see table next page) yy = year ww = work week marking diagram mzp47xxata axial lead 4000/ammo pack mzp47xxarr1 axial lead 2000/tape & reel mzp47xxarr2 axial lead 2000/tape & reel
zener voltage regulator i f v i i r i zt v r v z v f mzp4729a series http://onsemi.com 241 electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.5 v max @ i f = 200 ma for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r breakdown voltage i f forward current v f forward voltage @ i f i r surge current @ t a = 25 c
mzp4729a series http://onsemi.com 242 electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.5 v max @ i f = 200 ma for all types) zener voltage (note 2.) zener impedance (note 3.) leakage current i r device device v z (volts) @ i zt z zt @ i zt z zk @ i zk i r @ v r i r (note 4.) d ev i ce (note 1.) d ev i ce marking min nom max ma ma m a max volts ma mzp4729a mzp4729a 3.42 3.6 3.78 69 10 400 1 100 1 1260 mzp4734a mzp4734a 5.32 5.6 5.88 45 5 600 1 10 2 810 mzp4735a mzp4735a 5.89 6.2 6.51 41 2 700 1 10 3 730 mzp4736a mzp4736a 6.46 6.8 7.14 37 3.5 700 1 10 4 660 mzp4737a mzp4737a 7.13 7.5 7.88 34 4 700 0.5 10 5 605 mzp4738a mzp4738a 7.79 8.2 8.61 31 4.5 700 0.5 10 6 550 mzp4740a mzp4740a 9.50 10 10.50 25 7 700 0.25 10 7.6 454 mzp4741a mzp4741a 10.45 11 11.55 23 8 700 0.25 5 8.4 414 mzp4744a mzp4744a 14.25 15 15.75 17 14 700 0.25 5 11.4 304 mzp4745a mzp4745a 15.20 16 16.80 15.5 16 700 0.25 5 12.2 285 mzp4746a mzp4746a 17.10 18 18.90 14 20 750 0.25 5 13.7 250 mzp4749a mzp4749a 22.80 24 25.20 10.5 25 750 0.25 5 18.2 190 mzp4750a mzp4750a 25.65 27 28.35 9.5 35 750 0.25 5 20.6 170 mzp4751a mzp4751a 28.50 30 31.50 8.5 40 1000 0.25 5 22.8 150 mzp4752a mzp4752a 31.35 33 34.65 7.5 45 1000 0.25 5 25.1 135 mzp4753a mzp4753a 34.20 36 37.80 7.0 50 1000 0.25 5 27.4 125 1. tolerance and type number designation the type numbers listed have a standard tolerance on the nominal zener voltage of 5%. 2. zener voltage (v z ) measurement on semiconductor guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (t l ) at 30 c 1 c, 3/8 from the diode body. 3. zener impedance (z z ) derivation the zener impedance is derived from 60 seconds ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (i zt or i zk ) is superimposed on i zt or i zk . 4. surge current (i r ) nonrepetitive the rating listed in the electrical characteristics table is maximum peak, nonrepetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, i zt , per jedec standards. however, actual device capability is as described in figure 3 of the general data sheet for surmetic 30s. figure 1. power temperature derating curve t l , lead temperature ( c) 0 20 40 60 200 80 100 120 140 160 180 0 1 2 3 4 5 l = 1/8 l = 3/8 l = 1 l = lead length to heat sink p d , maximum steady state power dissipation (watts)
mzp4729a series http://onsemi.com 243 t, time (seconds) 0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.3 0.5 0.7 1 2 3 5 7 10 20 30 d =0.5 0.2 0.1 0.05 0.01 d = 0 duty cycle, d =t 1 /t 2 q jl (t, d) transient thermal resistance junctiontolead ( c/w) p pk t 1 note: below 0.1 second, thermal response curve is applicable to any lead length (l). single pulse d t jl = q jl (t)p pk repetitive pulses d t jl = q jl (t,d)p pk t 2 0.02 10 20 30 50 100 200 300 500 1k 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 pw, pulse width (ms) p , peak surge power (watts) pk 1 2 5 10 20 50 100 200 400 1000 0.0003 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 t a = 125 c t a = 125 c nominal v z (volts) as specified in elec. char. table figure 2. typical thermal response l, lead length = 3/8 inch figure 3. maximum surge power figure 4. typical reverse leakage i r , reverse leakage ( m adc) @ v r rectangular nonrepetitive waveform t j =25 c prior to initial pulse
mzp4729a series http://onsemi.com 244 application note since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. the following procedure is recommended: lead temperature, t l , should be determined from: t l = q la p d + t a q la is the lead-to-ambient thermal resistance ( c/w) and p d is the power dissipation. the value for q la will vary and depends on the device mounting method. q la is generally 3040 c/w for the various clips and tie points in common use and for printed circuit board wiring. the temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. the thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. using the measured value of t l , the junction temperature may be determined by: t j = t l + d t jl d t jl is the increase in junction temperature above the lead temperature and may be found from figure 2 for a train of power pulses (l = 3/8 inch) or from figure 10 for dc power. d t jl = q jl p d for worst-case design, using expected limits of i z , limits of p d and the extremes of t j ( d t j ) may be estimated. changes in voltage, v z , can then be found from: d v = q vz d t j q vz , the zener voltage temperature coefficient, is found from figures 5 and 6. under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. for best regulation, keep current excursions as low as possible. data of figure 2 should not be used to compute surge capability. surge limitations are given in figure 3. they are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of figure 3 be exceeded.
mzp4729a series http://onsemi.com 245 figure 5. units to 12 volts figure 6. units 10 to 400 volts figure 7. v z = 3.3 thru 10 volts figure 8. v z = 12 thru 82 volts figure 9. v z = 100 thru 400 volts figure 10. typical thermal resistance zener voltage versus zener current (figures 7, 8 and 9) temperature coefficient ranges (90% of the units are in the ranges indicated) v z , zener voltage @ i zt (volts) 34 5 6 789101112 10 8 6 4 2 0 -2 -4 range , temperature coefficient (mv/ c) @ i zt vz q 1000 500 200 100 50 20 10 10 20 50 100 200 400 1000 v z , zener voltage @ i zt (volts) , temperature coefficient (mv/ c) @ i zt vz q 01 234 56 7 8910 100 50 30 20 10 1 0.5 0.3 0.2 0.1 v z , zener voltage (volts) i , zener current (ma) z 2 5 3 0102030405060708090100 v z , zener voltage (volts) i , zener current (ma) z 100 50 30 20 10 1 0.5 0.3 0.2 0.1 2 5 3 100 200 300 400 250 350 150 10 1 0.5 0.2 0.1 v z , zener voltage (volts) 2 5 i , zener current (ma) z 0 10 20 30 40 50 60 70 80 l, lead length to heat sink (inch) primary path of conduction is through the cathode lead 0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1 t l jl , junctiontolead thermal resistance q l l ( c/w)
? semiconductor components industries, llc, 2001 may, 2001 rev. 1 246 publication order number: 1n5333b/d 1n5333b series 5 watt surmetic 40 zener voltage regulators this is a complete series of 5 watt zener diodes with tight limits and better operating characteristics that reflect the superior capabilities of siliconoxide passivated junctions. all this in an axiallead, transfermolded plastic package that offers protection in all common environmental conditions. specification features: ? zener voltage range 3.3 v to 200 v ? esd rating of class 3 (>16 kv) per human body model ? surge rating of up to 180 w @ 8.3 ms ? maximum limits guaranteed on up to six electrical parameters mechanical characteristics: case: void free, transfermolded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 230 c, 1/16 from the case for 10 seconds polarity: cathode indicated by polarity band mounting position: any maximum ratings rating symbol value unit max. steady state power dissipation @ t l = 75 c, lead length = 3/8 derate above 75 c p d 5 40 w mw/ c operating and storage temperature range t j , t stg 65 to +200 c device package shipping ordering information 1n53xxb axial lead 1000 units/box 1n53xxbrl axial lead axial lead case 17 plastic http://onsemi.com 4000/tape & reel cathode anode l 1n 53xxb yww l = assembly location 1n53xxb = device code = (see table next page) y = year ww = work week marking diagram 1n53xxbta axial lead 2000/ammo pack devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value.
zener voltage regulator i f v i i r i zt v r v z v f 1n5333b series http://onsemi.com 247 electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.2 v max @ i f = 1.0 a for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r breakdown voltage i f forward current v f forward voltage @ i f i r maximum surge current @ t a = 25 c v z reverse zener voltage change i zm maximum dc zener current
1n5333b series http://onsemi.com 248 electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.2 v max @ i f = 1.0 a for all types) zener voltage (note 2.) zener impedance (note 2.) leakage current i r v z i zm device device v z (volts) @ i zt z zt @ i zt z zk @ i zk i zk i r @ v r i r (note 3.) v z (note 4.) i zm (note 5.) d ev i ce (note 1.) d ev i ce marking min nom max ma a m a max volts a volts ma 1n5333b 1n5333b 3.14 3.3 3.47 380 3 400 1 300 1 20 0.85 1440 1n5334b 1n5334b 3.42 3.6 3.78 350 2.5 500 1 150 1 18.7 0.8 1320 1n5335b 1n5335b 3.71 3.9 4.10 320 2 500 1 50 1 17.6 0.54 1220 1n5336b 1n5336b 4.09 4.3 4.52 290 2 500 1 10 1 16.4 0.49 1100 1n5337b 1n5337b 4.47 4.7 4.94 260 2 450 1 5 1 15.3 0.44 1010 1n5338b 1n5338b 4.85 5.1 5.36 240 1.5 400 1 1 1 14.4 0.39 930 1n5339b 1n5339b 5.32 5.6 5.88 220 1 400 1 1 2 13.4 0.25 865 1n5340b 1n5340b 5.70 6.0 6.30 200 1 300 1 1 3 12.7 0.19 790 1n5341b 1n5341b 5.89 6.2 6.51 200 1 200 1 1 3 12.4 0.1 765 1n5342b 1n5342b 6.46 6.8 7.14 175 1 200 1 10 5.2 11.5 0.15 700 1n5343b 1n5343b 7.13 7.5 7.88 175 1.5 200 1 10 5.7 10.7 0.15 630 1n5344b 1n5344b 7.79 8.2 8.61 150 1.5 200 1 10 6.2 10 0.2 580 1n5345b 1n5345b 8.27 8.7 9.14 150 2 200 1 10 6.6 9.5 0.2 545 1n5346b 1n5346b 8.65 9.1 9.56 150 2 150 1 7.5 6.9 9.2 0.22 520 1n5347b 1n5347b 9.50 10 10.5 125 2 125 1 5 7.6 8.6 0.22 475 1n5348b 1n5348b 10.45 11 11.55 125 2.5 125 1 5 8.4 8.0 0.25 430 1n5349b 1n5349b 11.4 12 12.6 100 2.5 125 1 2 9.1 7.5 0.25 395 1n5350b 1n5350b 12.35 13 13.65 100 2.5 100 1 1 9.9 7.0 0.25 365 1n5351b 1n5351b 13.3 14 14.7 100 2.5 75 1 1 10.6 6.7 0.25 340 1n5352b 1n5352b 14.25 15 15.75 75 2.5 75 1 1 11.5 6.3 0.25 315 1n5353b 1n5353b 15.2 16 16.8 75 2.5 75 1 1 12.2 6.0 0.3 295 1n5354b 1n5354b 16.15 17 17.85 70 2.5 75 1 0.5 12.9 5.8 0.35 280 1n5355b 1n5355b 17.1 18 18.9 65 2.5 75 1 0.5 13.7 5.5 0.4 264 1n5356b 1n5356b 18.05 19 19.95 65 3 75 1 0.5 14.4 5.3 0.4 250 1n5357b 1n5357b 19 20 21 65 3 75 1 0.5 15.2 5.1 0.4 237 1n5358b 1n5358b 20.9 22 23.1 50 3.5 75 1 0.5 16.7 4.7 0.45 216 1n5359b 1n5359b 22.8 24 25.2 50 3.5 100 1 0.5 18.2 4.4 0.55 198 1n5360b 1n5360b 23.75 25 26.25 50 4 110 1 0.5 19 4.3 0.55 190 1n5361b 1n5361b 25.65 27 28.35 50 5 120 1 0.5 20.6 4.1 0.6 176 1n5362b 1n5362b 26.6 28 29.4 50 6 130 1 0.5 21.2 3.9 0.6 170 1. tolerance and type number designation the jedec type numbers shown indicate a tolerance of 5%. 2. zener voltage (v z ) and impedance (i zt and i zk ) test conditions for zener voltage and impedance are as follows: i z is applied 40 10 ms prior to reading. mounting contacts are located 3/8 to 1/2 from the inside edge of mounting clips to the body of the diode (t a = 25 c +8 c, 2 c). 3. surge current (i r ) surge current is specified as the maximum allowable peak, nonrecurrent squarewave current with a pulse width, pw, of 8.3 ms. the da ta given in figure 6 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plottin g the applicable points on logarithmic paper. examples of this, using the 3.3 v and 200 v zener are shown in figure 7. mounting c ontact located as specified in note 2 (t a = 25 c +8 c, 2 c). 4. voltage regulation ( v z ) the conditions for voltage regulation are as follows: v z measurements are made at 10% and then at 50% of the i z max value listed in the electrical characteristics table. the test current time duration for each v z measurement is 40 10 ms. mounting contact located as specified in note 2 (t a = 25 c +8 c, 2 c). 5. maximum regulator current (i zm ) the maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the bsuffix device. the actual i zm for any device may not exceed the value of 5 watts divided by the actual v z of the device. t l = 75 c at 3/8 maximum from the device body.
1n5333b series http://onsemi.com 249 electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.2 v max @ i f = 1.0 a for all types) zener voltage (note 7.) zener impedance (note 7.) leakage current i r v z i zm device device v z (volts) @ i zt z zt @ i zt z zk @ i zk i zk i r @ v r i r (note 8.) v z (note 9.) i zm (note 10.) d ev i ce (note 6.) d ev i ce marking min nom max ma a m a max volts a volts ma 1n5363b 1n5363b 28.5 30 31.5 40 8 140 1 0.5 22.8 3.7 0.6 158 1n5364b 1n5364b 31.35 33 34.65 40 10 150 1 0.5 25.1 3.5 0.6 144 1n5365b 1n5365b 34.2 36 37.8 30 11 160 1 0.5 27.4 3.5 0.65 132 1n5366b 1n5366b 37.05 39 40.95 30 14 170 1 0.5 29.7 3.1 0.65 122 1n5367b 1n5367b 40.85 43 45.15 30 20 190 1 0.5 32.7 2.8 0.7 110 1n5368b 1n5368b 44.65 47 49.35 25 25 210 1 0.5 35.8 2.7 0.8 100 1n5369b 1n5369b 48.45 51 53.55 25 27 230 1 0.5 38.8 2.5 0.9 93 1n5370b 1n5370b 53.2 56 58.8 20 35 280 1 0.5 42.6 2.3 1.0 86 1n5371b 1n5371b 57 60 63 20 40 350 1 0.5 45.5 2.2 1.2 79 1n5372b 1n5372b 58.9 62 65.1 20 42 400 1 0.5 47.1 2.1 1.35 76 1n5373b 1n5373b 64.6 68 71.4 20 44 500 1 0.5 51.7 2.0 1.52 70 1n5374b 1n5374b 71.25 75 78.75 20 45 620 1 0.5 56 1.9 1.6 63 1n5375b 1n5375b 77.9 82 86.1 15 65 720 1 0.5 62.2 1.8 1.8 58 1n5376b 1n5376b 82.65 87 91.35 15 75 760 1 0.5 66 1.7 2.0 54.5 1n5377b 1n5377b 86.45 91 95.55 15 75 760 1 0.5 69.2 1.6 2.2 52.5 1n5378b 1n5378b 95 100 105 12 90 800 1 0.5 76 1.5 2.5 47.5 1n5379b 1n5379b 104.5 110 115.5 12 125 1000 1 0.5 83.6 1.4 2.5 43 1n5380b 1n5380b 114 120 126 10 170 1150 1 0.5 91.2 1.3 2.5 39.5 1n5381b 1n5381b 123.5 130 136.5 10 190 1250 1 0.5 98.8 1.2 2.5 36.6 1n5382b 1n5382b 133 140 147 8 230 1500 1 0.5 106 1.2 2.5 34 1n5383b 1n5383b 142.5 150 157.5 8 330 1500 1 0.5 114 1.1 3.0 31.6 1n5384b 1n5384b 152 160 168 8 350 1650 1 0.5 122 1.1 3.0 29.4 1n5385b 1n5385b 161.5 170 178.5 8 380 1750 1 0.5 129 1.0 3.0 28 1n5386b 1n5386b 171 180 189 5 430 1750 1 0.5 137 1.0 4.0 26.4 1n5387b 1n5387b 180.5 190 199.5 5 450 1850 1 0.5 144 0.9 5.0 25 1n5388b 1n5388b 190 200 210 5 480 1850 1 0.5 152 0.9 5.0 23.6 6. tolerance and type number designation the jedec type numbers shown indicate a tolerance of 5%. 7. zener voltage (v z ) and impedance (i zt and i zk ) test conditions for zener voltage and impedance are as follows: i z is applied 40 10 ms prior to reading. mounting contacts are located 3/8 to 1/2 from the inside edge of mounting clips to the body of the diode (t a = 25 c +8 c, 2 c). 8. surge current (i r ) surge current is specified as the maximum allowable peak, nonrecurrent squarewave current with a pulse width, pw, of 8.3 ms. the da ta given in figure 6 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plottin g the applicable points on logarithmic paper. examples of this, using the 3.3 v and 200 v zener are shown in figure 7. mounting c ontact located as specified in note 7 (t a = 25 c +8 c, 2 c). 9. voltage regulation ( v z ) the conditions for voltage regulation are as follows: v z measurements are made at 10% and then at 50% of the i z max value listed in the electrical characteristics table. the test current time duration for each v z measurement is 40 10 ms. mounting contact located as specified in note 7 (t a = 25 c +8 c, 2 c). 10. maximum regulator current (i zm ) the maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the bsuffix device. the actual i zm for any device may not exceed the value of 5 watts divided by the actual v z of the device. t l = 75 c at 3/8 maximum from the device body.
1n5333b series http://onsemi.com 250 figure 1. power temperature derating curve t l , lead temperature ( c) p d , maximum steady state power dissipation (watts) 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 200 l=lead length l= to heat sink l= (see figure 5) l=1/8 l=3/8 l=1 temperature coefficients figure 2. temperature coefficient-range for units 3 to 10 volts figure 3. temperature coefficient-range for units 10 to 220 volts v z , zener voltage @ i zt (volts) 10 8 6 4 2 0 -2 34 56 7 8910 range 300 200 100 50 30 20 10 5 0 20 40 60 80 100 120 140 160 180 200 220 v z , zener voltage @ i zt (volts) q v z , temperature coefficient (mv/ c) @ i zt q v z , temperature coefficient (mv/ c) @ i zt range
1n5333b series http://onsemi.com 251 figure 4. typical thermal response l, lead length = 3/8 inch figure 5. typical thermal resistance figure 6. maximum non-repetitive surge current versus nominal zener voltage (see note 3) q jl (t, d), transient thermal resistance junctiontolead ( c/w) 20 10 5 2 1 0.5 0.2 0.00 1 0.00 5 0.01 0.05 0.1 0.5 1 5 10 20 50 100 d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.01 d = 0 note: below 0.1 second, thermal note: response curve is applicable note: to any lead length (l). duty cycle, d = t 1 /t 2 single pulse d t jl = q jl (t)p pk repetitive pulses d t jl = q jl (t, d)p pk p pk t 1 t 2 t, time (seconds) 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 primary path of conduction is through the cathode lead l l l, lead length to heat sink (inch) jl , junctiontolead thermal resistance ( q c/w) i r , peak surge current (amps) 40 20 10 4 2 1 0.1 0.2 0.4 34 6810 20 30 40 60 80 100 200 *square wave pw=100ms* pw=1000ms* pw=1ms* pw=8.3ms* nominal v z (v) 30 20 10 0.1 0.2 0.5 1 2 5 1 10 100 100 0 1000 100 10 1 0.1 1 234 5678 910 i z , zener current (ma) pw, pulse width (ms) v z , zener voltage (volts) figure 7. peak surge current versus pulse width (see note 3) figure 8. zener voltage versus zener current v z = 3.3 thru 10 volts v z =200v v z =3.3v plotted from information given in figure 6 t c =25 c t=25 c i r , peak surge current (amps)
1n5333b series http://onsemi.com 252 i z , zener current (ma) v z , zener voltage (volts) 1000 100 10 1 0.1 10 20 30 40 50 60 70 80 100 10 1 0.1 80 100 120 140 160 180 200 220 v z , zener voltage (volts) i z , zener current (ma) t=25 c figure 9. zener voltage versus zener current v z = 11 thru 75 volts figure 10. zener voltage versus zener current v z = 82 thru 200 volts application note since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. the following procedure is recommended: lead temperature, t l , should be determined from: t l = q la p d + t a q la is the lead-to-ambient thermal resistance and p d is the power dissipation. junction temperature, t j , may be found from: t j = t l + d t jl d t jl is the increase in junction temperature above the lead temperature and may be found from figure 4 for a train of power pulses or from figure 5 for dc power. d t jl = q jl p d for worst-case design, using expected limits of i z , limits of p d and the extremes of t j ( d t j ) may be estimated. changes in voltage, v z , can then be found from: d v = q vz d t j q vz , the zener voltage temperature coefficient, is found from figures 2 and 3. under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. for best regulation, keep current excursions as low as possible. data of figure 4 should not be used to compute surge capability. surge limitations are given in figure 6. they are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots resulting in device degradation should the limits of figure 6 be exceeded.
http://onsemi.com 253 chapter 7 zener voltage regulator diodes surface mounted data sheets
? semiconductor components industries, llc, 2001 may, 2001 rev. 5 254 publication order number: mm3z2v4t1/d mm3z2v4t1 series zener voltage regulators 200 mw sod323 surface mount this series of zener diodes is packaged in a sod323 surface mount package that has a power dissipation of 200 mw. they are designed to provide voltage regulation protection and are especially attractive in situations where space is at a premium. they are well suited for applications such as cellular phones, hand held portables, and high density pc boards. specification features: ? standard zener breakdown voltage range 2.4 v to 75 v ? steady state power rating of 200 mw ? small body outline dimensions: 0.067 x 0.049 (1.7 mm x 1.25 mm) ? low body height: 0.035 (0.9 mm) ? package weight: 4.507 mg/unit ? esd rating of class 3 (>16 kv) per human body model mechanical characteristics: case: void-free, transfer-molded plastic finish: all external surfaces are corrosion resistant maximum case temperature for soldering purposes: 260 c for 10 seconds leads: plated with pb/sn for ease of solderability polarity: cathode indicated by polarity band flammability rating: ul94 v0 mounting position: any maximum ratings rating symbol max unit total device dissipation fr5 board, (note 1.) @ t a = 25 c derate above 25 c p d 200 1.5 mw mw/ c thermal resistance from junction to ambient r ja 635 c/w junction and storage temperature range t j , t stg 65 to +150 c 1. fr4 minimum pad device package shipping ordering information sod323 case 47702 style 1 http://onsemi.com 1 cathode 2 anode mm3zxxxt1 sod323 3000/tape & reel marking diagram see specific marking information in the device marking column of the electrical characteristics table on page 256 of this data sheet. device marking information xx = specific device code m = date code xx m 2the at1o suffix refers to an 8 mm, 7 inch reel.
zener voltage regulator i f v i i r i zt v r v z v f mm3z2v4t1 series http://onsemi.com 255 electrical characteristics (t a = 25 c unless otherwise noted, v f = 0.9 v max. @ i f = 10 ma for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r reverse voltage i f forward current v f forward voltage @ i f v z maximum temperature coefficient of v z c max. capacitance @v r = 0 and f = 1 mhz
mm3z2v4t1 series http://onsemi.com 256 electrical characteristics (t a = 25 c unless otherwise noted, v f = 0.9 v max. @ i f = 10 ma for all types) zener voltage (note 2.) zener impedance leakage current v z c device v z (volts) @ i zt z zt @ i zt z zk @ i zk i r @ v r v z (mv/k) @ i zt c @ v r = 0 f = 1 mhz device d ev i ce marking min nom max ma ma a volts min max pf mm3z2v4t1 00 2.2 2.4 2.6 5 100 1000 0.5 50 1.0 3.5 0 450 mm3z2v7t1 01 2.5 2.7 2.9 5 100 1000 0.5 20 1.0 3.5 0 450 mm3z3v0t1 02 2.8 3.0 3.2 5 100 1000 0.5 10 1.0 3.5 0 450 mm3z3v3t1 05 3.1 3.3 3.5 5 95 1000 0.5 5 1.0 3.5 0 450 mm3z3v6t1 06 3.4 3.6 3.8 5 90 1000 0.5 5 1.0 3.5 0 450 mm3z3v9t1 07 3.7 3.9 4.1 5 90 1000 0.5 3 1.0 3.5 2.5 450 mm3z4v3t1 08 4.0 4.3 4.6 5 90 1000 0.5 3 1.0 3.5 0 450 mm3z4v7t1 09 4.4 4.7 5.0 5 80 800 0.5 3 2.0 3.5 0.2 260 mm3z5v1t1 0a 4.8 5.1 5.4 5 60 500 0.5 2 2.0 2.7 1.2 225 mm3z5v6t1 0c 5.2 5.6 6.0 5 40 200 0.5 1 2.0 2.0 2.5 200 mm3z6v2t1 0e 5.8 6.2 6.6 5 10 100 0.5 3 4.0 0.4 3.7 185 mm3z6v8t1 0f 6.4 6.8 7.2 5 15 160 0.5 2 4.0 1.2 4.5 155 mm3z7v5t1 0g 7.0 7.5 7.9 5 15 160 0.5 1 5.0 2.5 5.3 140 mm3z8v2t1 0h 7.7 8.2 8.7 5 15 160 0.5 0.7 5.0 3.2 6.2 135 mm3z9v1t1 0k 8.5 9.1 9.6 5 15 160 0.5 0.2 7.0 3.8 7.0 130 mm3z10vt1 0l 9.4 10 10.6 5 20 160 0.5 0.1 8.0 4.5 8.0 130 mm3z11vt1 0m 10.4 11 11.6 5 20 160 0.5 0.1 8.0 5.4 9.0 130 mm3z12vt1 0n 11.4 12 12.7 5 25 80 0.5 0.1 8.0 6.0 10 130 mm3z13vt1 0p 12.4 13.25 14.1 5 30 80 0.5 0.1 8.0 7.0 11 120 mm3z15vt1 0t 14.3 15 15.8 5 30 80 0.5 0.05 10.5 9.2 13 110 mm3z16vt1 0u 15.3 16.2 17.1 5 40 80 0.5 0.05 11.2 10.4 14 105 mm3z18vt1 0w 16.8 18 19.1 5 45 80 0.5 0.05 12.6 12.4 16 100 mm3z20vt1 0z 18.8 20 21.2 5 55 100 0.5 0.05 14.0 14.4 18 85 mm3z22vt1 10 20.8 22 23.3 5 55 100 0.5 0.05 15.4 16.4 20 85 mm3z24vt1 11 22.8 24.2 25.6 5 70 120 0.5 0.05 16.8 18.4 22 80 mm3z27vt1 12 25.1 27 28.9 2 80 300 0.5 0.05 18.9 21.4 25.3 70 mm3z30vt1 14 28 30 32 2 80 300 0.5 0.05 21.0 24.4 29.4 70 mm3z33vt1 18 31 33 35 2 80 300 0.5 0.05 23.2 27.4 33.4 70 mm3z36vt1 19 34 36 38 2 90 500 0.5 0.05 25.2 30.4 37.4 70 mm3z39vt1 20 37 39 41 2 130 500 0.5 0.05 27.3 33.4 41.2 45 mm3z43vt1 21 40 43 46 2 150 500 0.5 0.05 30.1 37.6 46.6 40 mm3z47vt1 1a 44 47 50 2 170 500 0.5 0.05 32.9 42.0 51.8 40 mm3z51vt1 1c 48 51 54 2 180 500 0.5 0.05 35.7 46.6 57.2 40 mm3z56vt1 1d 52 56 60 2 200 500 0.5 0.05 39.2 52.2 63.8 40 mm3z62vt1 1e 58 62 66 2 215 500 0.5 0.05 43.4 58.8 71.6 35 mm3z68vt1 1f 64 68 72 2 240 500 0.5 0.05 47.6 65.6 79.8 35 mm3z75vt1 1g 70 75 79 2 255 500 0.5 0.05 52.5 73.4 88.6 35 2. zener voltage is measured with a pulse test current i z at an ambient temperature of 25 c.
mm3z2v4t1 series http://onsemi.com 257 typical characteristics 80 v z , nominal zener voltage figure 1. effect of zener voltage on zener impedance 10 3.0 z zt , dynamic impedance ( ) w 1000 100 10 1.0 t j = 25 c i z(ac) = 0.1 i z(dc) f = 1 khz i z = 1 ma 5 ma v f , forward voltage (v) figure 2. typical forward voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 i f , forward current (ma) 1000 100 10 1.0 150 c 75 c 25 c 0 c c, capacitance (pf) 70 v z , nominal zener voltage (v) figure 3. typical capacitance 1000 100 10 1.0 10 4.0 bias at 50% of v z nom t a = 25 c 0 v bias 1 v bias i r , leakage current ( a) m v z , nominal zener voltage (v) figure 4. typical leakage current 1000 100 10 1.0 0.1 0.01 0.001 0.0001 0.00001 70 60 50 40 30 20 10 0 +150 c +25 c 55 c
mm3z2v4t1 series http://onsemi.com 258 typical characteristics 12 v z , zener voltage (v) 100 10 1.0 0.1 0.01 10 8.0 6.0 4.0 2.0 0 t a = 25 c i z , zener current (ma) v z , zener voltage (v) figure 5. zener voltage versus zener current (v z up to 12 v) figure 6. zener voltage versus zener current (12 v to 75 v) 100 10 1 0.1 0.01 10 30 50 70 90 t a = 25 c i z , zener current (ma) temperature ( c) 25 0 100 40 20 0 power dissipation (%) 50 75 100 125 150 80 60 figure 7. steady state power derating
? semiconductor components industries, llc, 2001 may, 2001 rev. 1 259 publication order number: bzx84c2v4lt1/d bzx84c2v4lt1 series zener voltage regulators 225 mw sot23 surface mount this series of zener diodes is offered in the convenient, surface mount plastic sot23 package. these devices are designed to provide voltage regulation with minimum space requirement. they are well suited for applications such as cellular phones, hand held portables, and high density pc boards. specification features: ? 225 mw rating on fr4 or fr5 board ? zener breakdown voltage range 2.4 v to 75 v ? package designed for optimal automated board assembly ? small package size for high density applications ? esd rating of class 3 (>16 kv) per human body model mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic case finish: corrosion resistant finish, easily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds polarity: cathode indicated by polarity band flammability rating: ul94 v0 maximum ratings rating symbol max unit total power dissipation on fr5 board, (note 1.) @ t a = 25 c derated above 25 c p d 225 1.8 mw mw/ c thermal resistance junction to ambient r ja 556 c/w total power dissipation on alumina substrate, (note 2.) @ t a = 25 c derated above 25 c p d 300 2.4 mw mw/ c thermal resistance junction to ambient r ja 417 c/w junction and storage temperature range t j , t stg 65 to +150 c 1. fr5 = 1.0 x 0.75 x 0.62 in. 2. alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina device package shipping ordering information sot23 case 318 style 8 http://onsemi.com 3 cathode 1 anode bzx84cxxxlt1 sot23 3000/tape & reel marking diagram see specific marking information in the device marking column of the electrical characteristics table on page 261 of this data sheet. device marking information xxx = specific device code m = date code xxx 2the at1o suffix refers to an 8 mm, 7 inch reel. the at3o suffix refers to an 8 mm, 13 inch reel. m bzx84cxxxlt3 sot23 10,000/tape & reel 3 1 2 devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value.
zener voltage regulator i f v i i r i zt v r v z v f bzx84c2v4lt1 series http://onsemi.com 260 electrical characteristics (pinout: 1-anode, 2-no connection, 3-cathode) (t a = 25 c unless otherwise noted, v f = 0.95 v max. @ i f = 10 ma) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i r reverse leakage current @ v r v r reverse voltage i f forward current v f forward voltage @ i f v z maximum temperature coefficient of v z c max. capacitance @ v r = 0 and f = 1 mhz
bzx84c2v4lt1 series http://onsemi.com 261 electrical characteristics (pinout: 1-anode, 2-no connection, 3-cathode) (t a = 25 c unless otherwise noted, v f = 0.90 v max. @ i f = 10 ma) v z1 (volts) @i zt1 =5ma (note 3.) z zt1 (ohms) v z2 (volts) @i zt2 =1ma (note 3.) z zt2 (ohms) @i v z3 (volts) @i zt3 =20ma (note 3.) z zt3 (ohms) max reverse leakage current vz (mv/k) @ i zt1 = 5 ma c (pf) device device marking min nom max (ohms) @ i zt1 = 5 ma min max @ i zt2 = 1 ma (note 4.) min max (ohms) @ i zt3 = 20 ma v r volts i r a @ min max c (pf) @ v r = 0 f = 1 mhz bzx84c2v4lt1 z11 2.2 2.4 2.6 100 1.7 2.1 600 2.6 3.2 50 50 1 3.5 0 450 bzx84c2v7lt1 z12 2.5 2.7 2.9 100 1.9 2.4 600 3 3.6 50 20 1 3.5 0 450 bzx84c3v0lt1 z13 2.8 3 3.2 95 2.1 2.7 600 3.3 3.9 50 10 1 3.5 0 450 bzx84c3v3lt1 z14 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5 1 3.5 0 450 bzx84c3v6lt1 z15 3.4 3.6 3.8 90 2.7 3.3 600 3.9 4.5 40 5 1 3.5 0 450 bzx84c3v9lt1 z16 3.7 3.9 4.1 90 2.9 3.5 600 4.1 4.7 30 3 1 3.5 2.5 450 bzx84c4v3lt1 w9 4 4.3 4.6 90 3.3 4 600 4.4 5.1 30 3 1 3.5 0 450 bzx84c4v7lt1 z1 4.4 4.7 5 80 3.7 4.7 500 4.5 5.4 15 3 2 3.5 0.2 260 bzx84c5v1lt1 z2 4.8 5.1 5.4 60 4.2 5.3 480 5 5.9 15 2 2 2.7 1.2 225 bzx84c5v6lt1 z3 5.2 5.6 6 40 4.8 6 400 5.2 6.3 10 1 2 2.0 2.5 200 bzx84c6v2lt1 z4 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185 bzx84c6v8lt1 z5 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155 bzx84c7v5lt1 z6 7 7.5 7.9 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140 bzx84c8v2lt1 z7 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135 bzx84c9v1lt1 z8 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130 bzx84c10lt1 z9 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130 bzx84c11lt1 y1 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130 bzx84c12lt1 y2 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130 bzx84c13lt1 y3 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120 bzx84c15lt1 y4 14.3 15 15.8 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110 bzx84c16lt1 y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105 bzx84c18lt1 y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100 bzx84c20lt1 y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85 bzx84c22lt1 y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85 bzx84c24lt1 y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80 v z1 below @i zt1 =2ma z zt1 below v z2 below @i zt2 = 0.1 ma z zt2 below @i v z3 below @i zt3 =10ma z zt3 below max reverse leakage current vz (mv/k) below @ i zt1 = 2 ma c (pf) device device marking min nom max below @ i zt1 = 2 ma min max @ i zt4 = 0.5 ma (note 4.) min max below @ i zt3 = 10 ma v r volts i r a @ min max c (pf) @ v r = 0 f = 1 mhz bzx84c27lt1 y10 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70 bzx84c30lt1 y11 28 30 32 80 27.8 32 300 28.1 32.4 50 0.05 21 24.4 29.4 70 bzx84c33lt1 y12 31 33 35 80 30.8 35 325 31.1 35.4 55 0.05 23.1 27.4 33.4 70 bzx84c36lt1 y13 34 36 38 90 33.8 38 350 34.1 38.4 60 0.05 25.2 30.4 37.4 70 bzx84c39lt1 y14 37 39 41 130 36.7 41 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45 bzx84c43lt1 y15 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40 bzx84c47lt1 y16 44 47 50 170 43.7 50 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40 bzx84c51lt1 y17 48 51 54 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 bzx84c56lt1 y18 52 56 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 bzx84c62lt1 y19 58 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 bzx84c68lt1 y20 64 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 bzx84c75lt1 y21 70 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 3. zener voltage is measured with a pulse test current i z at an ambient temperature of 25 c 4. the zener impedance, z zt2 , for the 27 through 75 volt types is tested at 0.5 ma rather than the test current of 0.1 ma used for v z2
bzx84c2v4lt1 series http://onsemi.com 262 typical characteristics vz , temperature coefficient (mv/ c) q v z , nominal zener voltage (v) -3 -2 - 1 0 1 2 3 4 5 6 7 8 12 11 10 9 8 7 6 5 4 3 2 figure 1. temperature coefficients (temperature range 55 c to +150 c) typical t c values v z @ i zt vz , temperature coefficient (mv/ c) q 100 10 1 10 100 v z , nominal zener voltage (v) figure 2. temperature coefficients (temperature range 55 c to +150 c) v z @ i zt 100 v z , nominal zener voltage figure 3. effect of zener voltage on zener impedance 10 1 z zt , dynamic impedance ( ) w 1000 100 10 1 t j = 25 c i z(ac) = 0.1 i z(dc) f = 1 khz i z = 1 ma 5 ma 20 ma v f , forward voltage (v) figure 4. typical forward voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 i f , forward current (ma) 1000 100 10 1 75 v (mmbz5267blt1) 91 v (mmbz5270blt1) 150 c 75 c 25 c 0 c typical t c values
bzx84c2v4lt1 series http://onsemi.com 263 typical characteristics c, capacitance (pf) 100 v z , nominal zener voltage (v) figure 5. typical capacitance 1000 100 10 1 10 1 bias at 50% of v z nom t a = 25 c 0 v bias 1 v bias 12 v z , zener voltage (v) 100 10 1 0.1 0.01 10 8 6 4 2 0 t a = 25 c i z , zener current (ma) v z , zener voltage (v) 100 10 1 0.1 0.01 10 30 50 70 90 t a = 25 c i r , leakage current ( a) m 90 v z , nominal zener voltage (v) figure 6. typical leakage current 1000 100 10 1 0.1 0.01 0.001 0.0001 0.00001 80 70 60 50 40 30 20 10 0 +150 c +25 c -55 c i z , zener current (ma) figure 7. zener voltage versus zener current (v z up to 12 v) figure 8. zener voltage versus zener current (12 v to 91 v)
? semiconductor components industries, llc, 2001 april, 2001 rev. 2 264 publication order number: mmbz5221blt1/d mmbz5221blt1 series zener voltage regulators 225 mw sot23 surface mount this series of zener diodes is offered in the convenient, surface mount plastic sot23 package. these devices are designed to provide voltage regulation with minimum space requirement. they are well suited for applications such as cellular phones, hand held portables, and high density pc boards. specification features: ? 225 mw rating on fr4 or fr5 board ? zener voltage range 2.4 v to 91 v ? package designed for optimal automated board assembly ? small package size for high density applications ? esd rating of class 3 (>16 kv) per human body model mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic case finish: corrosion resistant finish, easily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds polarity: cathode indicated by polarity band flammability rating: ul94 v0 maximum ratings rating symbol max unit total power dissipation on fr5 board, (note 1.) @ t a = 25 c derated above 25 c p d 225 1.8 mw mw/ c thermal resistance junction to ambient r ja 556 c/w total power dissipation on alumina substrate, (note 2.) @ t a = 25 c derated above 25 c p d 300 2.4 mw mw/ c thermal resistance junction to ambient r ja 417 c/w junction and storage temperature range t j , t stg 65 to +150 c 1. fr5 = 1.0 x 0.75 x 0.62 in. 2. alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina device package shipping ordering information sot23 case 318 style 8 http://onsemi.com 3 cathode 1 anode mmbz52xxblt1 sot23 3000/tape & reel marking diagram see specific marking information in the device marking column of the electrical characteristics table on page 266 of this data sheet. device marking information xxx = specific device code m = date code xxx 2the at1o suffix refers to an 8 mm, 7 inch reel. the at3o suffix refers to an 8 mm, 13 inch reel. m mmbz52xxblt3 sot23 10,000/tape & reel 3 1 2 devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value.
zener voltage regulator i f v i i r i zt v r v z v f mmbz5221blt1 series http://onsemi.com 265 electrical characteristics (pinout: 1-anode, 2-no connection, 3-cathode) (t a = 25 c unless otherwise noted, v f = 0.95 v max. @ i f = 10 ma) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r reverse voltage i f forward current v f forward voltage @ i f
mmbz5221blt1 series http://onsemi.com 266 electrical characteristics (pinout: 1-anode, 2-nc, 3-cathode) (v f = 0.9 v max @ i f = 10 ma for all types.) zener voltage (note 3.) zener impedance leakage current device v z (volts) @ i zt z zt @ i zt z zk @ i zk i r @ v r device device marking min nom max ma ma a volts mmbz5221blt1 18a 2.28 2.4 2.52 20 30 1200 0.25 100 1 mmbz5222blt1 18b 2.37 2.5 2.63 20 30 1250 0.25 100 1 mmbz5223blt1 18c 2.56 2.7 2.84 20 30 1300 0.25 75 1 mmbz5224blt1 18d 2.66 2.8 2.94 20 30 1400 0.25 75 1 mmbz5225blt1 18e 2.85 3 3.15 20 29 1600 0.25 50 1 mmbz5226blt1 8a 3.13 3.3 3.47 20 28 1600 0.25 25 1 mmbz5227blt1 8b 3.42 3.6 3.78 20 24 1700 0.25 15 1 mmbz5228blt1 8c 3.70 3.9 4.10 20 23 1900 0.25 10 1 mmbz5229blt1 8d 4.08 4.3 4.52 20 22 2000 0.25 5 1 mmbz5230blt1 8e 4.46 4.7 4.94 20 19 1900 0.25 5 2 mmbz5231blt1 8f 4.84 5.1 5.36 20 17 1600 0.25 5 2 mmbz5232blt1 8g 5.32 5.6 5.88 20 11 1600 0.25 5 3 mmbz5233blt1 8h 5.70 6 6.30 20 7 1600 0.25 5 3.5 mmbz5234blt1 8j 5.89 6.2 6.51 20 7 1000 0.25 5 4 mmbz5235blt1 8k 6.46 6.8 7.14 20 5 750 0.25 3 5 mmbz5236blt1 8l 7.12 7.5 7.88 20 6 500 0.25 3 6 mmbz5237blt1 8m 7.79 8.2 8.61 20 8 500 0.25 3 6.5 mmbz5238blt1 8n 8.26 8.7 9.14 20 8 600 0.25 3 6.5 mmbz5239blt1 8p 8.64 9.1 9.56 20 10 600 0.25 3 7 mmbz5240blt1 8q 9.50 10 10.50 20 17 600 0.25 3 8 mmbz5241blt1 8r 10.4 11 11.55 20 22 600 0.25 2 8.4 mmbz5242blt1 8s 11.40 12 12.60 20 30 600 0.25 1 9.1 mmbz5243blt1 8t 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9 mmbz5244blt1 8u 13.30 14 14.70 9 15 600 0.25 0.1 10 mmbz5245blt1 8v 14.25 15 15.75 8.5 16 600 0.25 0.1 11 mmbz5246blt1 8w 15.20 16 16.80 7.8 17 600 0.25 0.1 12 mmbz5247blt1 8x 16.15 17 17.85 7.4 19 600 0.25 0.1 13 mmbz5248blt1 8y 17.10 18 18.90 7 21 600 0.25 0.1 14 mmbz5249blt1 8z 18.05 19 19.95 6.6 23 600 0.25 0.1 14 mmbz5250blt1 81a 19.00 20 21.00 6.2 25 600 0.25 0.1 15 mmbz5251blt1 81b 20.90 22 23.10 5.6 29 600 0.25 0.1 17 mmbz5252blt1 81c 22.80 24 25.20 5.2 33 600 0.25 0.1 18 mmbz5253blt1 81d 23.75 25 26.25 5 35 600 0.25 0.1 19 mmbz5254blt1 81e 25.65 27 28.35 4.6 41 600 0.25 0.1 21 mmbz5255blt1 81f 26.60 28 29.40 4.5 44 600 0.25 0.1 21 mmbz5256blt1 81g 28.50 30 31.50 4.2 49 600 0.25 0.1 23 mmbz5257blt1 81h 31.35 33 34.65 3.8 58 700 0.25 0.1 25 mmbz5258blt1 81j 34.20 36 37.80 3.4 70 700 0.25 0.1 27 mmbz5259blt1 81k 37.05 39 40.95 3.2 80 800 0.25 0.1 30 mmbz5260blt1 81l 40.85 43 45.15 3 93 900 0.25 0.1 33 mmbz5261blt1 81m 44.65 47 49.35 2.7 105 1000 0.25 0.1 36 mmbz5262blt1 81n 48.45 51 53.55 2.5 125 1100 0.25 0.1 39 mmbz5263blt1 81p 53.20 56 58.80 2.2 150 1300 0.25 0.1 43 mmbz5264blt1 81q 57.00 60 63.00 2.1 170 1400 0.25 0.1 46 mmbz5265blt1 81r 58.90 62 65.10 2 185 1400 0.25 0.1 47 mmbz5266blt1 81s 64.60 68 71.40 1.8 230 1600 0.25 0.1 52 mmbz5267blt1 81t 71.25 75 78.75 1.7 270 1700 0.25 0.1 56 mmbz5268blt1 81u 77.90 82 86.10 1.5 330 2000 0.25 0.1 62 mmbz5269blt1 81v 82.65 87 91.35 1.4 370 2200 0.25 0.1 68 mmbz5270blt1 81w 86.45 91 95.55 1.4 400 2300 0.25 0.1 69 3. zener voltage is measured with a pulse test current i z at an ambient temperature of 25 c
mmbz5221blt1 series http://onsemi.com 267 typical characteristics vz , temperature coefficient (mv/ c) q v z , nominal zener voltage (v) -3 -2 - 1 0 1 2 3 4 5 6 7 8 12 11 10 9 8 7 6 5 4 3 2 figure 1. temperature coefficients (temperature range 55 c to +150 c) typical t c values for mmbz5221blt1 series v z @ i zt vz , temperature coefficient (mv/ c) q 100 10 1 10 100 v z , nominal zener voltage (v) figure 2. temperature coefficients (temperature range 55 c to +150 c) typical t c values for mmbz5221blt1 series v z @ i zt 100 v z , nominal zener voltage figure 3. effect of zener voltage on zener impedance 10 1 z zt , dynamic impedance ( ) w 1000 100 10 1 t j = 25 c i z(ac) = 0.1 i z(dc) f = 1 khz i z = 1 ma 5 ma 20 ma v f , forward voltage (v) figure 4. typical forward voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 i f , forward current (ma) 1000 100 10 1 75 v (mmbz5267blt1) 91 v (mmbz5270blt1) 150 c 75 c 25 c 0 c
mmbz5221blt1 series http://onsemi.com 268 typical characteristics c, capacitance (pf) 100 v z , nominal zener voltage (v) figure 5. typical capacitance 1000 100 10 1 10 1 bias at 50% of v z nom t a = 25 c 0 v bias 1 v bias 12 v z , zener voltage (v) 100 10 1 0.1 0.01 10 8 6 4 2 0 t a = 25 c i z , zener current (ma) v z , zener voltage (v) 100 10 1 0.1 0.01 10 30 50 70 90 t a = 25 c i r , leakage current ( a) m 90 v z , nominal zener voltage (v) figure 6. typical leakage current 1000 100 10 1 0.1 0.01 0.001 0.0001 0.00001 80 70 60 50 40 30 20 10 0 +150 c +25 c -55 c i z , zener current (ma) figure 7. zener voltage versus zener current (v z up to 12 v) figure 8. zener voltage versus zener current (12 v to 91 v)
? semiconductor components industries, llc, 2001 may, 2001 rev. 1 269 publication order number: mmsz5221bt1/d mmsz5221bt1 series zener voltage regulators 500 mw sod123 surface mount three complete series of zener diodes are offered in the convenient, surface mount plastic sod123 package. these devices provide a convenient alternative to the leadless 34package style. specification features: ? 500 mw rating on fr4 or fr5 board ? wide zener reverse voltage range 2.4 v to 110 v ? package designed for optimal automated board assembly ? small package size for high density applications ? general purpose, medium current ? esd rating of class 3 (>16 kv) per human body model mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic case finish: corrosion resistant finish, easily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds polarity: cathode indicated by polarity band flammability rating: ul94 v0 maximum ratings rating symbol max unit total power dissipation on fr5 board, (note 1.) @ t l = 75 c derated above 75 c p d 500 6.7 mw mw/ c thermal resistance junction to ambient (note 2.) r ja 340 c/w thermal resistance junction to lead (note 2.) r jl 150 c/w junction and storage temperature range t j , t stg 55 to +150 c 1. fr5 = 3.5 x 1.5 inches, using the on minimum recommended footprint as shown in figure no tag 2. thermal resistance measurement obtained via infrared scan method device package shipping ordering information sod123 case 425 style 1 http://onsemi.com 1 cathode 2 anode mmsz52xxbt1 sod123 3000/tape & reel marking diagram see specific marking information in the device marking column of the electrical characteristics table on page 271 of this data sheet. device marking information xx = specific device code m = date code xx m 2the at1o suffix refers to an 8 mm, 7 inch reel. the at3o suffix refers to an 8 mm, 13 inch reel. 1 2 devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. aa aa aa mmsz52xxbt3 sod123 10,000/tape & reel
zener voltage regulator i f v i i r i zt v r v z v f mmsz5221bt1 series http://onsemi.com 270 electrical characteristics (t a = 25 c unless otherwise noted, v f = 0.95 v max. @ i f = 10 ma) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r reverse voltage i f forward current v f forward voltage @ i f
mmsz5221bt1 series http://onsemi.com 271 electrical characteristics (t a = 25 c unless otherwise noted, v f = 0.9 v max. @ i f = 10 ma) zener voltage (notes 3. and 4.) zener impedance (note 5.) leakage current device v z (volts) @ i zt z zt @ i zt z zk @ i zk i r @ v r device device marking min nom max ma ma a volts mmsz5221bt1 c1 2.28 2.4 2.52 20 30 1200 0.25 100 1 mmsz5222bt1 c2 2.38 2.5 2.63 20 30 1250 0.25 100 1 mmsz5223bt1 c3 2.57 2.7 2.84 20 30 1300 0.25 75 1 mmsz5224bt1 c4 2.66 2.8 2.94 20 30 1400 0.25 75 1 mmsz5225bt1 c5 2.85 3.0 3.15 20 29 1600 0.25 50 1 mmsz5226bt1 d1 3.14 3.3 3.47 20 28 1600 0.25 25 1 mmsz5227bt1 d2 3.42 3.6 3.78 20 24 1700 0.25 15 1 mmsz5228bt1 d3 3.71 3.9 4.10 20 23 1900 0.25 10 1 mmsz5229bt1 d4 4.09 4.3 4.52 20 22 2000 0.25 5 1 mmsz5230bt1 d5 4.47 4.7 4.94 20 19 1900 0.25 5 2 mmsz5231bt1 e1 4.85 5.1 5.36 20 17 1600 0.25 5 2 mmsz5232bt1 e2 5.32 5.6 5.88 20 11 1600 0.25 5 3 mmsz5233bt1 e3 5.70 6.0 6.30 20 7 1600 0.25 5 3.5 mmsz5234bt1 e4 5.89 6.2 6.51 20 7 1000 0.25 5 4 mmsz5235bt1 e5 6.46 6.8 7.14 20 5 750 0.25 3 5 mmsz5236bt1 f1 7.13 7.5 7.88 20 6 500 0.25 3 6 mmsz5237bt1 f2 7.79 8.2 8.61 20 8 500 0.25 3 6.5 mmsz5238bt1 f3 8.27 8.7 9.14 20 8 600 0.25 3 6.5 mmsz5239bt1 f4 8.65 9.1 9.56 20 10 600 0.25 3 7 mmsz5240bt1 f5 9.50 10 10.50 20 17 600 0.25 3 8 mmsz5241bt1 h1 10.45 11 11.55 20 22 600 0.25 2 8.4 mmsz5242bt1 h2 11.40 12 12.60 20 30 600 0.25 1 9.1 mmsz5243bt1 h3 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9 mmsz5244bt1 h4 13.30 14 14.70 9.0 15 600 0.25 0.1 10 mmsz5245bt1 h5 14.25 15 15.75 8.5 16 600 0.25 0.1 11 mmsz5246bt1 j1 15.20 16 16.80 7.8 17 600 0.25 0.1 12 mmsz5247bt1 j2 16.15 17 17.85 7.4 19 600 0.25 0.1 13 mmsz5248bt1 j3 17.10 18 18.90 7.0 21 600 0.25 0.1 14 mmsz5249bt1 j4 18.05 19 19.95 6.6 23 600 0.25 0.1 14 mmsz5250bt1 j5 19.00 20 21.00 6.2 25 600 0.25 0.1 15 mmsz5251bt1 k1 20.90 22 23.10 5.6 29 600 0.25 0.1 17 mmsz5252bt1 k2 22.80 24 25.20 5.2 33 600 0.25 0.1 18 mmsz5253bt1 k3 23.75 25 26.25 5.0 35 600 0.25 0.1 19 mmsz5254bt1 k4 25.65 27 28.35 4.6 41 600 0.25 0.1 21 mmsz5255bt1 k5 26.60 28 29.40 4.5 44 600 0.25 0.1 21 mmsz5256bt1 m1 28.50 30 31.50 4.2 49 600 0.25 0.1 23 mmsz5257bt1 m2 31.35 33 34.65 3.8 58 700 0.25 0.1 25 mmsz5258bt1 m3 34.20 36 37.80 3.4 70 700 0.25 0.1 27 mmsz5259bt1 m4 37.05 39 40.95 3.2 80 800 0.25 0.1 30 mmsz5260bt1 m5 40.85 43 45.15 3.0 93 900 0.25 0.1 33 mmsz5261bt1 n1 44.65 47 49.35 2.7 105 1000 0.25 0.1 36 mmsz5262bt1 n2 48.45 51 53.55 2.5 125 1100 0.25 0.1 39 mmsz5263bt1 n3 53.20 56 58.80 2.2 150 1300 0.25 0.1 43 mmsz5264bt1 n4 57.00 60 63.00 2.1 170 1400 0.25 0.1 46 mmsz5265bt1 n5 58.90 62 65.10 2.0 185 1400 0.25 0.1 47 mmsz5266bt1 p1 64.60 68 71.40 1.8 230 1600 0.25 0.1 52 mmsz5267bt1 p2 71.25 75 78.75 1.7 270 1700 0.25 0.1 56 mmsz5268bt1 p3 77.90 82 86.10 1.5 330 2000 0.25 0.1 62 mmsz5269bt1 p4 82.65 87 91.35 1.4 370 2200 0.25 0.1 68 mmsz5270bt1 p5 86.45 91 95.55 1.4 400 2300 0.25 0.1 69 mmsz5272bt1 r2 104.5 110 115.5 1.1 750 3000 0.25 0.1 84 3. the type numbers shown have a standard tolerance of 5% on the nominal zener voltage. 4. nominal zener voltage is measured with the device junction in thermal equilibrium at t l = 30 c 1 c 5. z zt and z zk are measured by dividing the ac voltage drop across the device by the ac current applied. the specified limits are for i z(ac) = 0.1 i z(dc) with the ac frequency = 1 khz.
mmsz5221bt1 series http://onsemi.com 272 typical characteristics vz , temperature coefficient (mv/ c) q v z , nominal zener voltage (v) -3 -2 - 1 0 1 2 3 4 5 6 7 8 12 11 10 9 8 7 6 5 4 3 2 figure 1. temperature coefficients (temperature range 55 c to +150 c) typical t c values for mmsz5221bt1 series v z @ i zt vz , temperature coefficient (mv/ c) q 100 10 1 10 100 v z , nominal zener voltage (v) figure 2. temperature coefficients (temperature range 55 c to +150 c) v z @ i zt 1.2 1.0 0.8 0.6 0.4 0.2 0 150 125 100 75 50 25 0 t, temperature ( c) figure 3. steady state power derating p d versus t a p d versus t l p pk , peak surge power (watts) 0.1 pw, pulse width (ms) figure 4. maximum nonrepetitive surge power 1 10 100 1000 1000 100 10 1 rectangular waveform, t a = 25 c 100 v z , nominal zener voltage figure 5. effect of zener voltage on zener impedance 10 1 z zt , dynamic impedance ( ) w 1000 100 10 1 t j = 25 c i z(ac) = 0.1 i z(dc) f = 1 khz i z = 1 ma 5 ma 20 ma v f , forward voltage (v) figure 6. typical forward voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 i f , forward current (ma) 1000 100 10 1 75 v (mmsz5267bt1) 91 v (mmsz5270bt1) 150 c 75 c 25 c 0 c typical t c values for mmsz5221bt1 series
mmsz5221bt1 series http://onsemi.com 273 typical characteristics c, capacitance (pf) 100 v z , nominal zener voltage (v) figure 7. typical capacitance 1000 100 10 1 10 1 bias at 50% of v z nom t a = 25 c 0 v bias 1 v bias 12 v z , zener voltage (v) 100 10 1 0.1 0.01 10 8 6 4 2 0 t a = 25 c i z , zener current (ma) v z , zener voltage (v) 100 10 1 0.1 0.01 10 30 50 70 90 t a = 25 c i r , leakage current ( a) m 90 v z , nominal zener voltage (v) figure 8. typical leakage current 1000 100 10 1 0.1 0.01 0.001 0.0001 0.00001 80 70 60 50 40 30 20 10 0 +150 c +25 c -55 c i z , zener current (ma) figure 9. zener voltage versus zener current (v z up to 12 v) figure 10. zener voltage versus zener current (12 v to 91 v)
? semiconductor components industries, llc, 2001 may, 2001 rev. 1 274 publication order number: mmsz4678t1/d mmsz4678t1 series zener voltage regulators 500 mw sod123 surface mount three complete series of zener diodes are offered in the convenient, surface mount plastic sod123 package. these devices provide a convenient alternative to the leadless 34package style. specification features: ? 500 mw rating on fr4 or fr5 board ? wide zener reverse voltage range 1.8 v to 43 v ? package designed for optimal automated board assembly ? small package size for high density applications ? esd rating of class 3 (>16 kv) per human body model mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic case finish: corrosion resistant finish, easily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds polarity: cathode indicated by polarity band flammability rating: ul94 v0 maximum ratings rating symbol max unit total power dissipation on fr5 board, (note 1.) @ t l = 75 c derated above 75 c p d 500 6.7 mw mw/ c thermal resistance junction to ambient (note 2.) r ja 340 c/w thermal resistance junction to lead (note 2.) r jl 150 c/w junction and storage temperature range t j , t stg 55 to +150 c 1. fr5 = 3.5 x 1.5 inches, using the on minimum recommended footprint as shown in figure no tag 2. thermal resistance measurement obtained via infrared scan method device package shipping ordering information sod123 case 425 style 1 http://onsemi.com 1 cathode 2 anode mmsz4xxxt1 sod123 3000/tape & reel marking diagram see specific marking information in the device marking column of the electrical characteristics table on page 276 of this data sheet. device marking information xx = specific device code m = date code xx m 2the at1o suffix refers to an 8 mm, 7 inch reel. the at3o suffix refers to an 8 mm, 13 inch reel. 1 2 devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. aa aa aa mmsz4xxxt3 sod123 10,000/tape & reel
zener voltage regulator i f v i i r i zt v r v z v f mmsz4678t1 series http://onsemi.com 275 electrical characteristics (t a = 25 c unless otherwise noted, v f = 0.95 v max. @ i f = 10 ma) symbol parameter v z reverse zener voltage @ i zt i zt reverse current i r reverse leakage current @ v r v r reverse voltage i f forward current v f forward voltage @ i f
mmsz4678t1 series http://onsemi.com 276 electrical characteristics (t a = 25 c unless otherwise noted, v f = 0.9 v max. @ i f = 10 ma) zener voltage (notes 3.) leakage current device v z (volts) @ i zt i r @ v r device device marking min nom max a a volts mmsz4678t1 cc 1.71 1.8 1.89 50 7.5 1 mmsz4679t1 cd 1.90 2.0 2.10 50 5 1 mmsz4680t1 ce 2.09 2.2 2.31 50 4 1 mmsz4681t1 cf 2.28 2.4 2.52 50 2 1 mmsz4682t1 ch 2.565 2.7 2.835 50 1 1 mmsz4683t1 cj 2.85 3.0 3.15 50 0.8 1 mmsz4684t1 ck 3.13 3.3 3.47 50 7.5 1.5 mmsz4685t1 cm 3.42 3.6 3.78 50 7.5 2 mmsz4686t1 cn 3.70 3.9 4.10 50 5 2 mmsz4687t1 cp 4.09 4.3 4.52 50 4 2 mmsz4688t1 ct 4.47 4.7 4.94 50 10 3 mmsz4689t1 cu 4.85 5.1 5.36 50 10 3 mmsz4690t1 cv 5.32 5.6 5.88 50 10 4 mmsz4691t1 ca 5.89 6.2 6.51 50 10 5 mmsz4692t1 cx 6.46 6.8 7.14 50 10 5.1 mmsz4693t1 cy 7.13 7.5 7.88 50 10 5.7 mmsz4694t1 cz 7.79 8.2 8.61 50 1 6.2 mmsz4695t1 dc 8.27 8.7 9.14 50 1 6.6 mmsz4696t1 dd 8.65 9.1 9.56 50 1 6.9 mmsz4697t1 de 9.50 10 10.50 50 1 7.6 mmsz4698t1 df 10.45 11 11.55 50 0.05 8.4 mmsz4699t1 dh 11.40 12 12.60 50 0.05 9.1 mmsz4700t1 dj 12.35 13 13.65 50 0.05 9.8 mmsz4701t1 dk 13.30 14 14.70 50 0.05 10.6 mmsz4702t1 dm 14.25 15 15.75 50 0.05 11.4 mmsz4703t1 dn 15.20 16 16.80 50 0.05 12.1 mmsz4704t1 dp 16.15 17 17.85 50 0.05 12.9 mmsz4705t1 dt 17.10 18 18.90 50 0.05 13.6 mmsz4706t1 du 18.05 19 19.95 50 0.05 14.4 mmsz4707t1 dv 19.00 20 21.00 50 0.01 15.2 mmsz4708t1 da 20.90 22 23.10 50 0.01 16.7 mmsz4709t1 dx 22.80 24 25.20 50 0.01 18.2 mmsz4710t1 dy 23.75 25 26.25 50 0.01 19.0 mmsz4711t1 ea 25.65 27 28.35 50 0.01 20.4 mmsz4712t1 ec 26.60 28 29.40 50 0.01 21.2 mmsz4713t1 ed 28.50 30 31.50 50 0.01 22.8 mmsz4714t1 ee 31.35 33 34.65 50 0.01 25.0 mmsz4715t1 ef 34.20 36 37.80 50 0.01 27.3 mmsz4716t1 eh 37.05 39 40.95 50 0.01 29.6 mmsz4717t1 ej 40.85 43 45.15 50 0.01 32.6 3. nominal zener voltage is measured with the device junction in thermal equilibrium at t l = 30 c 1 c
mmsz4678t1 series http://onsemi.com 277 typical characteristics vz , temperature coefficient (mv/ c) q v z , nominal zener voltage (v) -3 -2 - 1 0 1 2 3 4 5 6 7 8 12 11 10 9 8 7 6 5 4 3 2 figure 1. temperature coefficients (temperature range 55 c to +150 c) typical t c values v z @ i zt vz , temperature coefficient (mv/ c) q 100 10 1 10 100 v z , nominal zener voltage (v) figure 2. temperature coefficients (temperature range 55 c to +150 c) v z @ i zt 1.2 1.0 0.8 0.6 0.4 0.2 0 150 125 100 75 50 25 0 t, temperature ( c) figure 3. steady state power derating p d versus t a p d versus t l p pk , peak surge power (watts) 0.1 pw, pulse width (ms) figure 4. maximum nonrepetitive surge power 1 10 100 1000 1000 100 10 1 rectangular waveform, t a = 25 c 100 v z , nominal zener voltage figure 5. effect of zener voltage on zener impedance 10 1 z zt , dynamic impedance ( ) w 1000 100 10 1 t j = 25 c i z(ac) = 0.1 i z(dc) f = 1 khz i z = 1 ma 5 ma 20 ma v f , forward voltage (v) figure 6. typical forward voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 i f , forward current (ma) 1000 100 10 1 75 v (mmsz5267bt1) 91 v (mmsz5270bt1) 150 c 75 c 25 c 0 c typical t c values
mmsz4678t1 series http://onsemi.com 278 typical characteristics c, capacitance (pf) 100 v z , nominal zener voltage (v) figure 7. typical capacitance 1000 100 10 1 10 1 bias at 50% of v z nom t a = 25 c 0 v bias 1 v bias 12 v z , zener voltage (v) 100 10 1 0.1 0.01 10 8 6 4 2 0 t a = 25 c i z , zener current (ma) v z , zener voltage (v) 100 10 1 0.1 0.01 10 30 50 70 90 t a = 25 c i r , leakage current ( a) m 90 v z , nominal zener voltage (v) figure 8. typical leakage current 1000 100 10 1 0.1 0.01 0.001 0.0001 0.00001 80 70 60 50 40 30 20 10 0 +150 c +25 c -55 c i z , zener current (ma) figure 9. zener voltage versus zener current (v z up to 12 v) figure 10. zener voltage versus zener current (12 v to 91 v)
? semiconductor components industries, llc, 2001 may, 2001 rev. 1 279 publication order number: mmsz2v4t1/d mmsz2v4t1 series zener voltage regulators 500 mw sod123 surface mount three complete series of zener diodes are offered in the convenient, surface mount plastic sod123 package. these devices provide a convenient alternative to the leadless 34package style. specification features: ? 500 mw rating on fr4 or fr5 board ? wide zener reverse voltage range 2.4 v to 56 v ? package designed for optimal automated board assembly ? small package size for high density applications ? esd rating of class 3 (>16 kv) per human body model mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic case finish: corrosion resistant finish, easily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds polarity: cathode indicated by polarity band flammability rating: ul94 v0 maximum ratings rating symbol max unit total power dissipation on fr5 board, (note 1.) @ t l = 75 c derated above 75 c p d 500 6.7 mw mw/ c thermal resistance junction to ambient (note 2.) r ja 340 c/w thermal resistance junction to lead (note 2.) r jl 150 c/w junction and storage temperature range t j , t stg 55 to +150 c 1. fr5 = 3.5 x 1.5 inches, using the on minimum recommended footprint as shown in figure no tag 2. thermal resistance measurement obtained via infrared scan method device package shipping ordering information sod123 case 425 style 1 http://onsemi.com 1 cathode 2 anode mmszxxxt1 sod123 3000/tape & reel marking diagram see specific marking information in the device marking column of the electrical characteristics table on page 280 of this data sheet. device marking information xx = specific device code m = date code xx m 2the at1o suffix refers to an 8 mm, 7 inch reel. the at3o suffix refers to an 8 mm, 13 inch reel. 1 2 devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. aa aa aa mmszxxxt3 sod123 10,000/tape & reel
zener voltage regulator i f v i i r i zt v r v z v f mmsz2v4t1 series http://onsemi.com 280 electrical characteristics (t a = 25 c unless otherwise noted, v f = 0.95 v max. @ i f = 10 ma) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i r reverse leakage current @ v r v r reverse voltage i f forward current v f forward voltage @ i f electrical characteristics (t a = 25 c unless otherwise noted, v f = 0.9 v max. @ i f = 10 ma) v z1 (volts) (notes 3. and 4.) z zt1 (note 5.) v z2 (volts) (notes 3. and 4.) z zt2 (note 5.) leakage current device @ i zt1 = 5 ma @ i zt2 = 1 ma i r @ v r device device marking min nom max min max a volts mmsz2v4t1 t1 2.28 2.4 2.52 100 1.7 2.1 600 50 1 mmsz2v7t1 t2 2.57 2.7 2.84 100 1.9 2.4 600 20 1 mmsz3v0t1 t3 2.85 3.0 3.15 95 2.1 2.7 600 10 1 mmsz3v3t1 t4 3.14 3.3 3.47 95 2.3 2.9 600 5 1 mmsz3v6t1 t5 3.42 3.6 3.78 90 2.7 3.3 600 5 1 mmsz3v9t1 u1 3.71 3.9 4.10 90 2.9 3.5 600 3 1 mmsz4v3t1 u2 4.09 4.3 4.52 90 3.3 4.0 600 3 1 mmsz4v7t1 u3 4.47 4.7 4.94 80 3.7 4.7 500 3 2 mmsz5v1t1 u4 4.85 5.1 5.36 60 4.2 5.3 480 2 2 mmsz5v6t1 u5 5.32 5.6 5.88 40 4.8 6.0 400 1 2 mmsz6v2t1 v1 5.89 6.2 6.51 10 5.6 6.6 150 3 4 mmsz6v8t1 v2 6.46 6.8 7.14 15 6.3 7.2 80 2 4 mmsz7v5t1 v3 7.13 7.5 7.88 15 6.9 7.9 80 1 5 mmsz8v2t1 v4 7.79 8.2 8.61 15 7.6 8.7 80 0.7 5 mmsz9v1t1 v5 8.65 9.1 9.56 15 8.4 9.6 100 0.5 6 mmsz10t1 a1 9.50 10 10.50 20 9.3 10.6 150 0.2 7 mmsz11t1 a2 10.45 11 11.55 20 10.2 11.6 150 0.1 8 mmsz12t1 a3 11.40 12 12.60 25 11.2 12.7 150 0.1 8 mmsz13t1 a4 12.35 13 13.65 30 12.3 14.0 170 0.1 8 mmsz15t1 a5 14.25 15 15.75 30 13.7 15.5 200 0.05 10.5 mmsz16t1 x1 15.20 16 16.80 40 15.2 17.0 200 0.05 11.2 mmsz18t1 x2 17.10 18 18.90 45 16.7 19.0 225 0.05 12.6 mmsz20t1 x3 19.00 20 21.00 55 18.7 21.1 225 0.05 14 mmsz22t1 x4 20.90 22 23.10 55 20.7 23.2 250 0.05 15.4 mmsz24t1 x5 22.80 24 25.20 70 22.7 25.5 250 0.05 16.8 mmsz27t1 y1 25.65 27 28.35 80 25 28.9 300 0.05 18.9 mmsz30t1 y2 28.50 30 31.50 80 27.8 32 300 0.05 21 mmsz33t1 y3 31.35 33 34.65 80 30.8 35 325 0.05 23.1 mmsz36t1 y4 34.20 36 37.80 90 33.8 38 350 0.05 25.2 mmsz39t1 y5 37.05 39 40.95 130 36.7 41 350 0.05 27.3 mmsz43t1 z1 40.85 43 45.15 150 39.7 46 375 0.05 30.1 mmsz51t1 z3 48.45 51 53.55 180 47.6 54 400 0.05 35.7 mmsz56t1 z4 53.20 56 58.80 200 51.5 60 425 0.05 39.2 3. the type numbers shown have a standard tolerance of 5% on the nominal zener voltage. 4. tolerance and voltage designation: zener voltage (vz) is measured with the zener current applied for pw = 1 ms. 5. z zt and z zk are measured by dividing the ac voltage drop across the device by the ac current applied. the specified limits are for i z(ac) = 0.1 i z(dc), with the ac frequency = 1 khz.
mmsz2v4t1 series http://onsemi.com 281 typical characteristics vz , temperature coefficient (mv/ c) q v z , nominal zener voltage (v) -3 -2 - 1 0 1 2 3 4 5 6 7 8 12 11 10 9 8 7 6 5 4 3 2 figure 1. temperature coefficients (temperature range 55 c to +150 c) typical t c values for mmsz2v4t1 series v z @ i zt vz , temperature coefficient (mv/ c) q 100 10 1 10 100 v z , nominal zener voltage (v) figure 2. temperature coefficients (temperature range 55 c to +150 c) v z @ i zt 1.2 1.0 0.8 0.6 0.4 0.2 0 150 125 100 75 50 25 0 t, temperature ( c) figure 3. steady state power derating p d versus t a p d versus t l p pk , peak surge power (watts) 0.1 pw, pulse width (ms) figure 4. maximum nonrepetitive surge power 1 10 100 1000 1000 100 10 1 rectangular waveform, t a = 25 c 100 v z , nominal zener voltage figure 5. effect of zener voltage on zener impedance 10 1 z zt , dynamic impedance ( ) w 1000 100 10 1 t j = 25 c i z(ac) = 0.1 i z(dc) f = 1 khz i z = 1 ma 5 ma 20 ma v f , forward voltage (v) figure 6. typical forward voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 i f , forward current (ma) 1000 100 10 1 75 v (mmsz5267bt1) 91 v (mmsz5270bt1) 150 c 75 c 25 c 0 c typical t c values for mmsz2v4t1 series
mmsz2v4t1 series http://onsemi.com 282 typical characteristics c, capacitance (pf) 100 v z , nominal zener voltage (v) figure 7. typical capacitance 1000 100 10 1 10 1 bias at 50% of v z nom t a = 25 c 0 v bias 1 v bias 12 v z , zener voltage (v) 100 10 1 0.1 0.01 10 8 6 4 2 0 t a = 25 c i z , zener current (ma) v z , zener voltage (v) 100 10 1 0.1 0.01 10 30 50 70 90 t a = 25 c i r , leakage current ( a) m 90 v z , nominal zener voltage (v) figure 8. typical leakage current 1000 100 10 1 0.1 0.01 0.001 0.0001 0.00001 80 70 60 50 40 30 20 10 0 +150 c +25 c -55 c i z , zener current (ma) figure 9. zener voltage versus zener current (v z up to 12 v) figure 10. zener voltage versus zener current (12 v to 91 v)
? semiconductor components industries, llc, 2001 may, 2001 rev. 3 283 publication order number: 1pmt5920bt3/d 1pmt5920bt3 series 3.2 watt plastic surface mount powermite ? package this complete new line of 3.2 watt zener diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat sink design. the powermite package has the same thermal performance as the sma while being 50% smaller in footprint area and delivering one of the lowest height profiles (1.1 mm) in the industry. because of its small size, it is ideal for use in cellular phones, portable devices, business machines and many other industrial/consumer applications. specification features: ? zener breakdown voltage: 6.2 47 volts ? dc power dissipation: 3.2 watts with tab 1 (cathode) @ 75 c ? low leakage < 5 m a ? esd rating of class 3 (> 16 kv) per human body model ? low profile maximum height of 1.1 mm ? integral heat sink/locking tabs ? full metallic bottom eliminates flux entrapment ? small footprint footprint area of 8.45 mm 2 ? supplied in 12 mm tape and reel 12,000 units per reel ? powermite is jedec registered as do216aa ? cathode indicated by polarity band mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic finish: all external surfaces are corrosion resistant and leads are readily solderable mounting position: any maximum case temperature for soldering purposes: 260 c for 10 seconds plastic surface mount 3.2 watt zener diodes 6.2 47 volts device package shipping ordering information 1pmt59xxbt3 powermite 12,000/tape & reel http://onsemi.com 12 1: cathode 2: anode lead orientation in tape: cathode (short) lead to sprocket holes xxb = specific device code xx = 20 41 = (see table next page) d = date code powermite case 457 plastic 1 2 marking diagram xxb d 1 cathode 2 anode
zener voltage regulator i f v i i r i zt v r v z v f 1pmt5920bt3 series http://onsemi.com 284 maximum ratings rating symbol value unit dc power dissipation @ t a = 25 c (note 1.) derate above 25 c thermal resistance from junction to ambient p d r q ja 500 4.0 248 mw mw/ c c/w thermal resistance from junction to lead (anode) r q janode 35 c/w maximum dc power dissipation (note 2.) thermal resistance from junction to tab (cathode) p d r q jcathode 3.2 23 w c/w operating and storage temperature range t j , t stg 55 to +150 c 1. mounted with recommended minimum pad size, pc board fr4. 2. at tab (cathode) temperature, t tab = 75 c electrical characteristics (t l = 25 c unless otherwise noted, v f = 1.5 v max. @ i f = 200 madc for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r reverse voltage i f forward current v f forward voltage @ i f electrical characteristics (t l = 30 c unless otherwise noted, v f = 1.25 volts @ 200 ma) zener voltage (note 3.) z zt @i zt z zk @i zk device v z @ i zt (volts) i zt i r @ v r v r z zt @ i zt (note 4.) z zk @ i zk (note 4.) i zk device d ev i ce marking min nom max (ma) ( a) (v) ( ) ( ) (ma) 1pmt5920bt3 20b 5.89 6.2 6.51 60.5 5.0 4.0 2.0 200 1.0 1pmt5921bt3 21b 6.46 6.8 7.14 55.1 5.0 5.2 2.5 200 1.0 1pmt5922bt3 22b 7.12 7.5 7.88 50 5.0 6.0 3.0 400 0.5 1pmt5923bt3 23b 7.79 8.2 8.61 45.7 5.0 6.5 3.5 400 0.5 1pmt5924bt3 24b 8.64 9.1 9.56 41.2 5.0 7.0 4.0 500 0.5 1pmt5925bt3 25b 9.5 10 10.5 37.5 5.0 8.0 4.5 500 0.25 1pmt5927bt3 27b 11.4 12 12.6 31.2 1.0 9.1 6.5 550 0.25 1pmt5929bt3 29b 14.25 15 15.75 25 1.0 11.4 9.0 600 0.25 1pmt5930bt3 30b 15.2 16 16.8 23.4 1.0 12.2 10 600 0.25 1pmt5931bt3 31b 17.1 18 18.9 20.8 1.0 13.7 12 650 0.25 1pmt5933bt3 33b 20.9 22 23.1 17 1.0 16.7 17.5 650 0.25 1pmt5934bt3 34b 22.8 24 25.2 15.6 1.0 18.2 19 700 0.25 1pmt5935bt3 35b 25.65 27 28.35 13.9 1.0 20.6 23 700 0.25 1pmt5936bt3 36b 28.5 30 31.5 12.5 1.0 22.8 28 750 0.25 1pmt5939bt3 39b 37.05 39 40.95 9.6 1.0 29.7 45 900 0.25 1pmt5941bt3 41b 44.65 47 49.35 8.0 1.0 35.8 67 1000 0.25 3. zener voltage is measured with the device junction in thermal equilibrium with an ambient temperature of 25 c. 4. zener impedance derivation z zt and z zk are measured by dividing the ac voltage drop across the device by the ac current applied. the specified limits are for i z (ac) = 0.1 i z (dc) with the ac frequency = 60 hz.
1pmt5920bt3 series http://onsemi.com 285 typical characteristics 7 5 3 2 figure 1. steady state power derating figure 2. v z to 10 volts 25 50 75 100 125 175 3.5 2.5 2 1.5 1 0 t, temperature ( c) p , maximum power dissipation (w) d 0.1 56 910 v z , zener voltage (volts) 0.5 t l 2 4 6 8 10 12 10 8 6 4 2 0 2 4 v z , zener voltage (volts) v z @ i zt 200 100 70 50 30 20 10 10 20 30 50 70 100 200 v z , zener voltage (volts) v z @ i zt 150 3 78 11 1 10 100 i z , zener current (ma) figure 3. v z = 12 thru 47 volts 0 102030405060708090100 v z , zener voltage (volts) i , zener current (ma) z 100 50 30 20 10 1 0.5 0.3 0.2 0.1 2 5 3 figure 4. zener voltage to 12 volts figure 5. zener voltage 14 to 47 volts figure 6. effect of zener voltage v z , zener voltage (volts) 5 7 10 20 30 50 70 100 200 100 70 50 30 20 10 z , dynamic impedance (ohms) z i z(dc) = 1ma 20 ma i z(rms) = 0.1 i z(dc) 10 ma vz , temperature coefficient (mv/ c) vz , temperature coefficient (mv/ c)
1pmt5920bt3 series http://onsemi.com 286 figure 7. effect of zener current i z , zener test current (ma) 1 k 500 200 100 50 20 10 5 2 1 0.5 1 2 5 10 20 50 100 200 500 z , dynamic impedance (ohms) z t j = 25 c i z(rms) = 0.1 i z(dc) 22 v 12 v 6.8 v 10,000 1000 100 10 110 v z , reverse zener voltage (volts) c, capacitance (pf) measured @ 50% v r measured @ 0 v bias figure 8. capacitance versus reverse zener voltage 100
? semiconductor components industries, llc, 2001 may, 2001 rev. 2 287 publication order number: 1sma5913bt3/d 1sma5913bt3 series 1.5 watt plastic surface mount zener voltage regulators this complete new line of 1.5 watt zener diodes offers the following advantages. specification features: ? standard zener breakdown voltage range 3.3 v to 68 v ? esd rating of class 3 (>16 kv) per human body model ? flat handling surface for accurate placement ? package design for top slide or bottom circuit board mounting ? low profile package ? ideal replacement for melf packages mechanical characteristics: case: void-free, transfer-molded plastic finish: all external surfaces are corrosion resistant with readily solderable leads maximum case temperature for soldering purposes: 260 c for 10 seconds polarity: cathode indicated by molded polarity notch or cathode band flammability rating: ul94 v0 maximum ratings rating symbol value unit dc power dissipation @ t l = 75 c, measured zero lead length (note 1.) derate above 75 c thermal resistance junctiontolead p d r jl 1.5 20 50 watts mw/ c c/w dc power dissipation @ t a = 25 c (note 2.) derate above 25 c thermal resistance junctiontoambient p d r ja 0.5 4.0 250 watts mw/ c c/w operating and storage temperature range t j , t stg 65 to +150 c 1. 1 square copper pad, fr4 board 2. fr4 board, using on semiconductor minimum recommended footprint http://onsemi.com sma case 403b plastic 8xxb = specific device code = (see table next page) ll = assembly location y = year ww = work week 8xxb llyww marking diagram cathode anode device package shipping ordering information 1sma59xxbt3 sma 5000/tape & reel 2the at3o suffix refers to a 13 inch reel.
zener voltage regulator i f v i i r i zt v r v z v f 1sma5913bt3 series http://onsemi.com 288 electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.5 v max. @ i f = 200 ma for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r reverse voltage i f forward current v f forward voltage @ i f i zm maximum dc zener current
1sma5913bt3 series http://onsemi.com 289 electrical characteristics (t a = 25 c unless otherwise noted, v f = 1.5 v max. @ i f = 200 ma for all types) zener voltage (note 4.) zener impedance leakage current device v z (volts) @ i zt z zt @ i zt z zk @ i zk i r @ v r i zm device (note 3.) d ev i ce marking min nom max ma ma m a volts ma(dc) 1sma5913bt3 813b 3.13 3.3 3.47 113.6 10 500 1.0 50 1.0 455 1sma5914bt3 814b 3.42 3.6 3.78 104.2 9.0 500 1.0 35.5 1.0 417 1sma5915bt3 815b 3.70 3.9 4.10 96.1 7.5 500 1.0 12.5 1.0 385 1sma5916bt3 816b 4.08 4.3 4.52 87.2 6.0 500 1.0 2.5 1.0 349 1sma5917bt3 817b 4.46 4.7 4.94 79.8 5.0 500 1.0 2.5 1.5 319 1sma5918bt3 818b 4.84 5.1 5.36 73.5 4.0 350 1.0 2.5 2.0 294 1sma5919bt3 819b 5.32 5.6 5.88 66.9 2.0 250 1.0 2.5 3.0 268 1sma5920bt3 820b 5.89 6.2 6.51 60.5 2.0 200 1.0 2.5 4.0 242 1sma5921bt3 821b 6.46 6.8 7.14 55.1 2.5 200 1.0 2.5 5.2 221 1sma5922bt3 822b 7.12 7.5 7.88 50 3.0 400 0.5 2.5 6.0 200 1sma5923bt3 823b 7.79 8.2 8.61 45.7 3.5 400 0.5 2.5 6.5 183 1sma5924bt3 824b 8.64 9.1 9.56 41.2 4.0 500 0.5 2.5 7.0 165 1sma5925bt3 825b 9.5 10 10.5 37.5 4.5 500 0.25 2.5 8.0 150 1sma5926bt3 826b 10.45 11 11.55 34.1 5.5 550 0.25 0.5 8.4 136 1sma5927bt3 827b 11.4 12 12.6 31.2 6.5 550 0.25 0.5 9.1 125 1sma5928bt3 828b 12.35 13 13.65 28.8 7.0 550 0.25 0.5 9.9 115 1sma5929bt3 829b 14.25 15 15.75 25 9.0 600 0.25 0.5 11.4 100 1sma5930bt3 830b 15.2 16 16.8 23.4 10 600 0.25 0.5 12.2 94 1sma5931bt3 831b 17.1 18 18.9 20.8 12 650 0.25 0.5 13.7 83 1sma5932bt3 832b 19 20 21 18.7 14 650 0.25 0.5 15.2 75 1sma5933bt3 833b 20.9 22 23.1 17 17.5 650 0.25 0.5 16.7 68 1sma5934bt3 834b 22.8 24 25.2 15.6 19 700 0.25 0.5 18.2 63 1sma5935bt3 835b 25.65 27 28.35 13.9 23 700 0.25 0.5 20.6 56 1sma5936bt3 836b 28.5 30 31.5 12.5 26 750 0.25 0.5 22.8 50 1sma5937bt3 837b 31.35 33 34.65 11.4 33 800 0.25 0.5 25.1 45 1sma5938bt3 838b 34.2 36 37.8 10.4 38 850 0.25 0.5 27.4 42 1sma5939bt3 839b 37.05 39 40.95 9.6 45 900 0.25 0.5 29.7 38 1sma5940bt3 840b 40.85 43 45.15 8.7 53 950 0.25 0.5 32.7 35 1sma5941bt3 841b 44.65 47 49.35 8.0 67 1000 0.25 0.5 35.8 32 1sma5942bt3 842b 48.45 51 53.55 7.3 70 1100 0.25 0.5 38.8 29 1sma5943bt3 843b 53.2 56 58.8 6.7 86 1300 0.25 0.5 42.6 27 1sma5944bt3 844b 58.9 62 65.1 6.0 100 1500 0.25 0.5 47.1 24 1sma5945bt3 845b 64.6 68 71.4 5.5 120 1700 0.25 0.5 51.7 22 3. tolerance and voltage regulation designation the type number listed indicates a tolerance of 5%. 4. v z limits are to be guaranteed at thermal equilibrium.
1sma5913bt3 series http://onsemi.com 290 rating and typical characteristic curves (t a = 25 c) vz , temperature coefficient (mv/ c) q 0 4 figure 7. steady state power derating figure 8. v z 3.3 thru 10 volts t, temperature ( c) figure 9. v z = 12 thru 68 volts 25 50 75 100 125 150 p d , maximum power dissipation (watts) i z , zener current (ma) z z , dynamic impedance (ohms) 3.2 2.4 1.6 0.8 0 0 100 246810 10 1 0.1 v z , zener voltage (volts) 100 10 1 0.1 010 20 30 40 v z , zener voltage (volts) 100 10 10 100 v z , zener voltage (volts) t l t a v z @ i zt 10 100 v z , zener voltage (volts) i z(dc) = 1 ma 100 10 10 ma 20 ma i z(rms) = 0.1 i z(dc) 50 figure 10. zener voltage 3.3 to 12 volts vz , temperature coefficient (mv/ c) q 10 8 6 4 2 0 -2 -4 24 6 810 v z , zener voltage (volts) v z @ i zt 12 figure 11. zener voltage 14 to 68 volts figure 12. effect of zener voltage i z , zener current (ma) 60 70 80
1sma5913bt3 series http://onsemi.com 291 rating and typical characteristic curves (t a = 25 c) t a = 25 c pw (i d ) is defined as the point where the peak current decays to 50% of i pp . 10 m s peak value i ppm half value - i pp /2 10/1000 m s waveform as defined by r.e.a. t d 1000 figure 13. capacitance curve figure 14. typical pulse rating curve breakdown voltage (volts) figure 15. pulse waveform figure 16. pulse waveform 10 100 100 10 0.01 10 0.1 1 10 1 0.1 0.01 t p , pulse width (ms) 120 100 80 60 40 0 01 2 3 4 t, time (ms) 120 0 0.1 t, time (ms) measured @ zero bias measured @ v z /2 t j = 25 c c, capacitance (pf) p pk i ppm , peak pulse current (%) nonrepetitive, exponential pulse waveform, t j = 25 c 20 5 100 80 60 40 20 0.04 0.06 0.08 8/20 m s waveform as defined by ansi c62.1 and iec 801-5. 0.5 i peak 0.9 i peak 0.1 i peak t t = 8 m s 20 m s 0 0.02 i ppm , peak pulse current (%) , peak power (kw)
? semiconductor components industries, llc, 2001 may, 2001 rev. 1 292 publication order number: 1smb5913bt3/d 1smb5913bt3 series 3 watt plastic surface mount zener voltage regulators this complete new line of 3 watt zener diodes offers the following advantages. specification features: ? zener voltage range 3.3 v to 200 v ? esd rating of class 3 (>16 kv) per human body model ? flat handling surface for accurate placement ? package design for top side or bottom circuit board mounting mechanical characteristics: case: void-free, transfer-molded plastic finish: all external surfaces are corrosion resistant and leads are readily solderable maximum lead temperature for soldering purposes: 260 c for 10 seconds leads: modified lbend providing more contact area to bond pads polarity: cathode indicated by polarity band flammability rating: ul94 v0 maximum ratings rating symbol value unit maximum steady state power dissipation @ t l = 75 c measured at zero lead length derate above 75 c thermal resistance from junction to lead p d r jl 3.0 40 25 w mw/ c c/w maximum steady state power dissipation @ t a = 25 c (note 1.) derate above 25 c thermal resistance from junction to ambient p d r ja 550 4.4 226 mw mw/ c c/w operating and storage temperature range t j , t stg 65 to +150 c 1. fr4 board, within 1 to device, using on semiconductor minimum recommended footprint, as shown in case 403a outline dimensions spec. plastic surface mount zener voltage regulator diodes 3.3200 volts 3 watt dc power devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. device package shipping ordering information 1smb59xxbt3 smb 2500/tape & reel smb case 403a plastic http://onsemi.com cathode anode y = year ww = work week 9xxb = specific device code = (see table page 294) yww 9xxb marking diagram 2the at3o suffix refers to a 13 inch reel.
zener voltage regulator i f v i i r i zt v r v z v f 1smb5913bt3 series http://onsemi.com 293 electrical characteristics (t l = 30 c unless otherwise noted, v f = 1.5 v max. @ i f = 200 ma(dc) for all types) symbol parameter v z reverse zener voltage @ i zt i zt reverse current z zt maximum zener impedance @ i zt i zk reverse current z zk maximum zener impedance @ i zk i r reverse leakage current @ v r v r reverse voltage i f forward current v f forward voltage @ i f i zm maximum dc zener current
1smb5913bt3 series http://onsemi.com 294 electrical characteristics (t l = 30 c unless otherwise noted, v f = 1.5 v max. @ i f = 200 ma(dc) for all types) zener voltage (note 3.) zener impedance (note 4.) leakage current device device v z (volts) @ i zt z zt @ i zt z zk @ i zk i r @ v r i zm d ev i ce (note 2.) d ev i ce marking min nom max ma ma m a volts ma(dc) 1smb5913bt3 913b 3.13 3.3 3.47 113.6 10 500 1 100 1 454 1smb5914bt3 914b 3.42 3.6 3.78 104.2 9 500 1 75 1 416 1smb5915bt3 915b 3.70 3.9 4.10 96.1 7.5 500 1 25 1 384 1smb5916bt3 916b 4.08 4.3 4.52 87.2 6 500 1 5 1 348 1smb5917bt3 917b 4.46 4.7 4.94 79.8 5 500 1 5 1.5 319 1smb5918bt3 918b 4.84 5.1 5.36 73.5 4 350 1 5 2 294 1smb5919bt3 919b 5.32 5.6 5.88 66.9 2 250 1 5 3 267 1smb5920bt3 920b 5.89 6.2 6.51 60.5 2 200 1 5 4 241 1smb5921bt3 921b 6.46 6.8 7.14 55.1 2.5 200 1 5 5.2 220 1smb5922bt3 922b 7.12 7.5 7.88 50 3 400 0.5 5 6 200 1smb5923bt3 923b 7.79 8.2 8.61 45.7 3.5 400 0.5 5 6.5 182 1smb5924bt3 924b 8.64 9.1 9.56 41.2 4 500 0.5 5 7 164 1smb5925bt3 925b 9.5 10 10.5 37.5 4.5 500 0.25 5 8 150 1smb5926bt3 926b 10.45 11 11.55 34.1 5.5 550 0.25 1 8.4 136 1smb5927bt3 927b 11.4 12 12.6 31.2 6.5 550 0.25 1 9.1 125 1smb5928bt3 928b 12.35 13 13.65 28.8 7 550 0.25 1 9.9 115 1smb5929bt3 929b 14.25 15 15.75 25 9 600 0.25 1 11.4 100 1smb5930bt3 930b 15.2 16 16.8 23.4 10 600 0.25 1 12.2 93 1smb5931bt3 931b 17.1 18 18.9 20.8 12 650 0.25 1 13.7 83 1smb5932bt3 932b 19 20 21 18.7 14 650 0.25 1 15.2 75 1smb5933bt3 933b 20.9 22 23.1 17 17.5 650 0.25 1 16.7 68 1smb5934bt3 934b 22.8 24 25.2 15.6 19 700 0.25 1 18.2 62 1smb5935bt3 935b 25.65 27 28.35 13.9 23 700 0.25 1 20.6 55 1smb5936bt3 936b 28.5 30 31.5 12.5 28 750 0.25 1 22.8 50 1smb5937bt3 937b 31.35 33 34.65 11.4 33 800 0.25 1 25.1 45 1smb5938bt3 938b 34.2 36 37.8 10.4 38 850 0.25 1 27.4 41 1smb5939bt3 939b 37.05 39 40.95 9.6 45 900 0.25 1 29.7 38 1smb5940bt3 940b 40.85 43 45.15 8.7 53 950 0.25 1 32.7 34 1smb5941bt3 941b 44.65 47 49.35 8 67 1000 0.25 1 35.8 31 1smb5942bt3 942b 48.45 51 53.55 7.3 70 1100 0.25 1 38.8 29 1smb5943bt3 943b 53.2 56 58.8 6.7 86 1300 0.25 1 42.6 26 1smb5944bt3 944b 58.9 62 65.1 6 100 1500 0.25 1 47.1 24 1smb5945bt3 945b 64.6 68 71.4 5.5 120 1700 0.25 1 51.7 22 1smb5946bt3 946b 71.25 75 78.75 5 140 2000 0.25 1 56 20 1smb5947bt3 947b 77.9 82 86.1 4.6 160 2500 0.25 1 62.2 18 1smb5948bt3 948b 86.45 91 95.55 4.1 200 3000 0.25 1 69.2 16 1smb5949bt3 949b 95 100 105 3.7 250 3100 0.25 1 76 15 1smb5950bt3 950b 104.5 110 115.5 3.4 300 4000 0.25 1 83.6 13 1smb5951bt3 951b 114 120 126 3.1 380 4500 0.25 1 91.2 12 1smb5952bt3 952b 123.5 130 136.5 2.9 450 5000 0.25 1 98.8 11 1smb5953bt3 953b 142.5 150 157.5 2.5 600 6000 0.25 1 114 10 1smb5954bt3 954b 152 160 168 2.3 700 6500 0.25 1 121.6 9 1smb5955bt3 955b 171 180 189 2.1 900 7000 0.25 1 136.8 8 1smb5956bt3 956b 190 200 210 1.9 1200 8000 0.25 1 152 7 2. tolerance and type number designation the type numbers listed indicate a tolerance of 5%. 3. zener voltage (v z ) measurement nominal zener voltage is measured with the device junction in thermal equilibrium with ambient temperature at 25 c. 4. zener impedance (z z ) derivation z zt and z zk are measured by dividing the ac voltage drop across the device by the ac current applied. the specified limits are for i z(ac) = 0.1 i z(dc) with the ac frequency = 60 hz.
1smb5913bt3 series http://onsemi.com 295 figure 1. steady state power derating 0 25 50 75 100 125 150 6 5 4 3 2 0 t, temperature ( c) p , maximum power dissipation (watts) d 10 20 30 50 100 200 300 500 1k 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 pw, pulse width (ms) p , peak surge power (watts) pk figure 2. maximum surge power rectangular nonrepetitive waveform t j =25 c prior to initial pulse figure 3. zener voltage e to 12 volts 2 4 6 8 10 12 10 8 6 4 2 0 -2 -4 v z , zener voltage (volts) , temperature coefficient (mv/ c) q vz 012345678910 100 50 30 20 10 1 0.5 0.3 0.2 0.1 v z , zener voltage (volts) 2 5 3 0 10 203040 50 607080 90100 v z , zener voltage (volts) 100 50 30 20 10 1 0.5 0.3 0.2 0.1 2 5 3 1 v z @ i zt t l t a figure 4. zener voltage e 14 to 200 volts 200 100 70 50 30 20 10 10 20 30 50 70 100 200 v z , zener voltage (volts) v z @ i zt , temperature coefficient (mv/ c) q vz figure 5. v z = 3.3 thru 10 volts figure 6. v z = 12 thru 82 volts i zt , reverse current (ma) i zt , reverse current (ma)
1smb5913bt3 series http://onsemi.com 296 figure 7. effect of zener voltage v z , zener voltage (volts) 5 7 10 20 30 50 70 100 200 100 70 50 30 20 10 7 5 3 2 z , dynamic impedance (ohms) z 10ma i z(dc) = 1ma 20ma i z(rms) = 0.1 i z(dc) figure 8. effect of zener current i z , zener test current (ma) 1k 500 200 100 50 20 10 5 2 1 0.5 1 2 5 10 20 50 100 200 500 z , dynamic impedance (ohms) z t j = 25 c i z(rms) = 0.1 i z(dc) v z =150v 91v 62v 22v 12v 6.8v rating and typical characteristic curves (t a = 25 c) t a = 25 c pw (i d ) is defined as the point where the peak current decays to 50% of i pp . 10 m s peak value i ppm half value - i pp /2 10/1000 m s waveform as defined by r.e.a. t d 1000 figure 9. capacitance curve figure 10. typical pulse rating curve breakdown voltage (volts) figure 11. pulse waveform figure 12. pulse waveform 10 100 100 10 0.01 10 0.1 1 10 1 0.1 0.01 t p , pulse width (ms) 120 100 80 60 40 0 01 2 3 4 t, time (ms) 120 0 0.1 t, time (ms) measured @ zero bias measured @ v z /2 t j = 25 c c, capacitance (pf) p pk i ppm , peak pulse current (%) nonrepetitive, exponential pulse waveform, t j = 25 c 20 5 100 80 60 40 20 0.04 0.06 0.08 8/20 m s waveform as defined by ansi c62.1 and iec 801-5. 0.5 i peak 0.9 i peak 0.1 i peak t t = 8 m s 20 m s 0 0.02 i ppm , peak pulse current (%) , peak power (kw)
http://onsemi.com 297 chapter 8 surface mount information and packaging specifications
http://onsemi.com 298
http://onsemi.com 299 information for using surface mount packages recommended footprints for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. power dissipation for a surface mount device the power dissipation for a surface mount device is a function of the drain/collector pad size. these can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. power dissipation for a surface mount device is determined by t j(max) , the maximum rated junction temperature of the die, r q ja , the thermal resistance from the device junction to ambient, and the operating temperature, t a . using the values provided on the data sheet, p d can be calculated as follows: p d = t j(max) t a r q ja the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device. for example, for a sot223 device, p d is calculated as follows. p d = 150 c 25 c 156 c/w = 800 milliwatts the 156 c/w for the sot223 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 800 milliwatts. there are other alternatives to achieving higher power dissipation from the surface mount packages. one is to increase the area of the drain/collector pad. by increasing the area of the drain/collector pad, the power dissipation can be increased. although the power dissipation can almost be doubled with this method, area is taken up on the printed circuit board which can defeat the purpose of using surface mount technology. for example, a graph of r q ja versus drain pad area is shown in figures 1, 2 and 3. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad ? . using a board material such as thermal clad, an aluminum core board, the power dissipation can be doubled using the same footprint. to ambient ( c/w) r ja , thermal resistance, junction q 0.8 watts 1.25 watts* 1.5 watts a, area (square inches) 0.0 0.2 0.4 0.6 0.8 1.0 160 140 120 100 80 figure 1. thermal resistance versus drain pad area for the sot223 package (typical) board material = 0.0625 g-10/fr-4, 2 oz copper t a = 25 c *mounted on the dpak footprint figure 2. thermal resistance versus drain pad area for the dpak package (typical) 1.75 watts board material = 0.0625 g-10/fr-4, 2 oz copper 80 100 60 40 20 10 8 6 4 2 0 3.0 watts 5.0 watts t a = 25 c a, area (square inches) to ambient ( c/w) r ja , thermal resistance, junction q figure 3. thermal resistance versus drain pad area for the d 2 pak package (typical) 2.5 watts a, area (square inches) board material = 0.0625 g-10/fr-4, 2 oz copper t a = 25 c 60 70 50 40 30 20 16 14 12 10 8 6 4 2 0 3.5 watts 5 watts to ambient ( c/w) r ja , thermal resistance, junction q
http://onsemi.com 300 solder stencil guidelines prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. solder stencils are used to screen the optimum amount. these stencils are typically 0.008 inches thick and may be made of brass or stainless steel. for packages such as the sc59, sc70/sot323, sod123, sot23, sot143, sot223, so8, so14, so16, and smb/smc diode packages, the stencil opening should be the same as the pad size or a 1:1 registration. this is not the case with the dpak and d 2 pak packages. if a 1:1 opening is used to screen solder onto the drain pad, misalignment and/or atombstoningo may occur due to an excess of solder. for these two packages, the opening in the stencil for the paste should be approximately 50% of the tab area. the opening for the leads is still a 1:1 registration. figure 4 shows a typical stencil for the dpak and d 2 pak packages. the pattern of the opening in the stencil for the drain pad is not critical as long as it allows approximately 50% of the pad to be covered with paste. ?? ?? ?? ?? ??? ??? ??? ??? ??? ??? ??? ??? ?? ?? figure 4. typical stencil for dpak and d 2 pak packages solder paste openings stencil soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference should be a maximum of 10 c. ? the soldering temperature and time should not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient shall be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used since the use of forced cooling will increase the temperature gradient and will result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling. * soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. * due to shadowing and the inability to set the wave height to incorporate other surface mount components, the d 2 pak is not recommended for wave soldering.
http://onsemi.com 301 typical solder heating profile for any given circuit board, there will be a group of control settings that will give the desired heat pattern. the operator must set temperatures for several heating zones and a figure for belt speed. taken together, these control settings make up a heating aprofileo for that particular circuit board. on machines controlled by a computer, the computer remembers these profiles from one operating session to the next. figure 5 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. this profile will vary among soldering systems, but it is a good starting point. factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. this profile shows temperature versus time. the line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. the two profiles are based on a high density and a low density board. the vitronics smd310 convection/infrared reflow soldering system was used to generate this profile. the type of solder used was 62/36/2 tin lead silver with a melting point between 17 7189 c. when this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. the components on the board are then heated by conduction. the circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. step 1 preheat zone 1 ramp" step 2 vent soak" step 3 heating zones 2 & 5 ramp" step 4 heating zones 3 & 6 soak" step 5 heating zones 4 & 7 spike" step 6 vent step 7 cooling 200 c 150 c 100 c 50 c time (3 to 7 minutes total) t max solder is liquid for 40 to 80 seconds (depending on mass of assembly) 205 to 219 c peak at solder joint desired curve for low mass assemblies 100 c 150 c 160 c 170 c 140 c figure 5. typical solder heating profile desired curve for high mass assemblies
http://onsemi.com 302 footprints for soldering sma mm inches 0.157 4.0 0.0787 2.0 0.0787 2.0 smc 0.171 4.343 0.110 2.794 0.150 3.810 mm inches sod123 0.91 0.036 1.22 0.048 2.36 0.093 4.19 0.165 mm inches smb mm inches 0.085 2.159 0.108 2.743 0.089 2.261 sot23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sod323 0.63mm 0.025 1.60mm 0.063 2.85mm 0.112 0.83mm 0.033 mm inches

http://onsemi.com 303 footprints for soldering sc74 0.028 0.7 0.074 1.9 0.037 0.95 0.037 0.95 0.094 2.4 0.039 1.0 inches mm sc88 0.5 mm (min) 0.4 mm (min) 0.65 mm 0.65 mm 1.9 mm powermite 0.100 2.54 0.025 0.635 0.050 1.27 0.105 2.67 0.030 0.762 inches mm sc88a 0.5 mm (min) 0.4 mm (min) 0.65 mm 0.65 mm 1.9 mm
http://onsemi.com 304 tvs/zener axial-lead lead tape packaging standards for axial-lead components 1.0 scope this section covers packaging requirements for the following axial-lead component's use in automatic testing and assembly equipment: on semiconductor case 17-02, case 41a-02, case 51-02 (do-7), case 59-03 (do-41), case 59-04, case 194-04 and case 299-02 (do-35). packaging, as covered in this section, shall consist of axial-lead components mounted by their leads on pressure sensitive tape, wound onto a reel. 2.0 purpose this section establishes on semiconductor standard practices for lead-tape packaging of axial-lead components and meets the requirements of eia standard rs-296-d alead-taping of components on axial lead configuration for automatic insertion,o level 1. 3.0 requirements 3.1 component leads 3.1.1 component leads shall not be bent beyond dimension e from their normal position. see figure 2. 3.1.2 the aco dimension shall be governed by the overall length of the reel packaged component. the distance between flanges shall be 0.059 inch to 0.315 inch greater than the overall component length. see figures 2 and 3. 3.1.3 cumulative dimension aao tolerance shall not exceed 0.059 over 6 in consecutive components. 3.2 orientation all polarized components must be oriented in one direction. the cathode lead tape shall be blue and the anode tape shall be white. see figure 1. 3.3 reeling 3.3.1 components on any reel shall not represent more than two date codes when date code identification is required. 3.3.2 component's leads shall be positioned perpendicularly between pairs of 0.250 inch tape. see figure 2. 3.3.3 a minimum 12 inch leader of tape shall be provided before the first and last component on the reel. 3.3.4 50 lb. kraft paper is wound between layers of components as far as necessary for component protection. 3.3.5 components shall be centered between tapes such that the difference between d1 and d2 does not exceed 0.055. 3.3.6 staples shall not be used for splicing. no more than four layers of tape shall be used in any splice area and no tape shall be offset from another by more than 0.031 inch noncumulative. tape splices shall overlap at least 6 inches for butt joints and at least 3 inches for lap joints and shall not be weaker than unspliced tape. 3.3.7 quantity per reel shall be as indicated in table 1. orders for tape and reeled product will only be processed and shipped in full reel increments. scheduled orders must be in releases of full reel increments or multiples thereof. 3.3.8 a maximum of 0.25% of the components per reel quantity may be missing without consecutive missing per level 1 of rs-296-d. 3.3.9 the single face roll pad shall be placed around the finished reel and taped securely. each reel shall then be placed in an appropriate container. 3.4 marking minimum reel and carton marking shall consist of the following (see figure 3): on semiconductor part number quantity manufacturer's name date codes (when applicable; see note 3.3.1 ) 4.0 requirements differing from this on semiconductor standard shall be negotiated with the factory. the packages indicated in the following table are suitable for lead tape packaging. the table indicates the specific devices (transient voltage suppressors and/or zeners) that can be obtained from on semiconductor in reel packaging and provides the appropriate packaging specification.
http://onsemi.com 305 lead tape packaging standards for axial-lead components (continued) table 1. packaging details (all dimensions in inches) case type product category device title suffix mpq quantity per reel (item 3.3.7) component spacing a dimension tape spacing b dimension reel dimension c reel dimension d (max) max off alignment e case 17 surmetic 40 & rl 4000 0.2 +/ 0.015 2.062 +/ 0.059 3 14 0.047 600 watt tvs case 41a 1500 watt tvs rl4 1500 0.4 +/ 0.02 2.062 +/ 0.059 3 14 0.047 case 51-02 do-7 glass rl 3000 0.2 +/ 0.02 2.062 +/ 0.059 3 14 0.047 (for reference only) case 59-03 do-41 glass & rl 6000 0.2 +/ 0.015 2.062 +/ 0.059 3 14 0.047 do-41 surmetic 30 rectifier case 59-04 500 watt tvs rl 5000 0.2 +/ 0.02 2.062 +/ 0.059 3 14 0.047 rectifier case 194-04 110 amp tvs rl 800 0.4 +/ 0.02 1.875 +/ 0.059 3 14 0.047 (automotive) rectifier case 267-02 rectifier rl 1500 0.4 +/ 0.02 2.062 +/ 0.059 3 14 0.047 case 299 do-35 glass rl 5000 0.2 +/ 0.02 2.062 +/ 0.059 3 14 0.047 kraft paper tape, blue item 3.2 (cathode) reel roll pad container tape, white item 3.2 (anode) item 3.1.1 max off alignment e item 3.3.5 both sides 0.250 item 3.3.2 0.031 item 3.3.5 d1 d2 a overalllg item3.1.2 figure 1. reel packing figure 2. component spacing optional design 1.188 item 3.4 3.5 dia. c d figure 3. reel dimensions b
http://onsemi.com 306 tvs/zener surface mount embossed tape and reel embossed tape and reel is used to facilitate automatic pick and place equipment feed requirements. the tape is used as the shipping container for various products and requires a minimum of handling. the antistatic/conductive tape provides a secure cavity for the product when sealed with the apeel-backo cover tape. ? used for automatic pick and place feed systems ? minimizes product handling ? eia 481-1, 8 mm and 12 mm taping of surface mount components for automatic handling and eia 481-2, 16 mm and 24 mm embossed carrier taping of surface mount components for automatic handling ? sod-123, sot-23 in 8 mm tape, sod323 ? smb in 12 mm tape ? smc in 16 mm tape ordering information use the standard device title and add the required suffix as listed in the option table below. note that the individual reels have a finite number of devices depending on the type of product contained in the tape. also note the minimum lot size is one full reel for each line item and orders are required to be in increments of the single reel quantity. sot-23 8 mm smc 16 mm sod-123, sod323 8 mm sma, smb, powermite 12 mm tape width pitch (1) reel size devices per reel and minim m device package case type t ape wid t h (mm) (mm) (in) r ee l si ze (inch)* and minimum order quantity d ev i ce suffix sod-123, sot-23, case 318 8 4.0 0.1 .157 .004 7 3,000 t1 sod323 8 13 10,000 t3 sma case 403b 12 8.0 0.1 .315 .004 13 5,000 t3 smb case 403a 12 8.0 0.1 .315 .004 13 2,500 t3 smc case 403 16 8.0 0.1 .315 .004 13 2,500 t3 powermite case 457 12 8.0 0.1 .315 .004 13 12,000 t3 sc88 case 419b 8 4.0 0.1 .157 .004 7 3,000 t1/t2 sc88a case 419a 8 4.0 0.1 .157 .004 7 3,000 t1/t2 sc74 case 318f 8 4.0 0.1 .157 .004 7 3,000 t1 8 13 10,000 t3 (1) see next page. * 7 inch reel = 180 mm, 13 inch reel = 330 mm tape and reel data for tvs/zener surface mount devices packages sod-123 sot-23 smb smc
http://onsemi.com 307 p 0 k t b 1 k 0 top cover tape embossment user direction of feed center lines of cavity d p 2 10 pitches cumulative tolerance on tape 0.2 mm ( 0.008 ) e f w p b 0 a 0 d 1 for components 2.0 mm x 1.2 mm and larger * top cover tape thickness (t 1 ) 0.10 mm (.004 ) max. embossment embossed carrier r min bending radius maximum component rotation typical component cavity center line typical component center line 100 mm (3.937 ) 250 mm (9.843 ) 1 mm (.039 ) max 1 mm max 10 tape and components shall pass around radius r" without damage tape for machine reference only including draft and radii concentric around b 0 camber (top view) allowable camber to be 1 mm/100 mm nonaccumulative over 250 mm see note 1 bar code label carrier tape specifications dimensions tape size b 1 max (2) d d 1 e f k p p 0 p 2 r min t max w max 8mm 4.55mm (.179 ) 1.5+0.1mm -0.0 (0 9 00 ????? ??? ) 1.75 0.1mm (.069 .004 ) 3.5 0.05mm (.138 .002 ) 2.4mmmax (.094 ) 4.0 0.1mm (.157 .004 ) 4.0 0.1mm (.157 .004 ) 2.0 0.1mm (.079 .002 ) 25mm (.98 ) 0.6mm (.024 ) 8.3mm (.327 ) 12mm 8.2mm (.323 ) 0.0 (.059+.004 -0.0) 1.5mmmin (.060 ) (.069 ? ? ? 0.05mm (.217 .002 ) 6.4mmmax (.252 ) 4.0 0.1mm (.157 .004 ) 8.0 0.1mm (.315 .004 ) (.157 ? ? ??? ?? ? ?? ??? ) (.024 ) 12 .30mm (.470 .012 ) 16mm 12.1mm (.476 ) 7.5 0.10mm (.295 .004 ) 7.9mmmax (.311 ) 4.0 0.1mm (.157 .004 ) 8.0 0.1mm (.315 .004 ) 12.0 0.1 mm (.472 .004 ) 16.3mm (.642 ) 24mm 20.1mm (.791 ) 11.5 0.1mm (.453 .004 ) 11.9mmmax (.468 ) 16.0 .01mm (.63 .004 ) 24.3mm (.957 ) metric dimensions govern english are in parentheses for reference only. note 1: a 0 , b 0 , and k 0 are determined by component size. the clearance between the components and the cavity must be within .05 mm min. to .5 mm max. , note 1: the component cannot rotate more than 10 within the determined cavity. note 2: if b 1 exceeds 4.2 mm (.165) for 8 mm embossed tape, the tape may not feed through all tape feeders.
http://onsemi.com 308 reel configuration metric dimensions govern e english are in parentheses for reference only a full radius t max g 20.2 mm min (.795 ) 1.5 mm min (.06 ) 13.0 mm 0.5 mm (.512 .002 ) 50 mm min (1.969 ) outside dimension measured at edge inside dimension measured near hub size a max g t max 8 mm 330 mm (12.992 ) 8.4 mm + 1.5 mm, 0.0 (.33 + .059 , 0.00) 14.4 mm (.56 ) 12 mm 330 mm (12.992 ) 12.4 mm + 2.0 mm, 0.0 (.49 + .079 , 0.00) 18.4 mm (.72 ) 16 mm 360 mm (14.173 ) 16.4 mm + 2.0 mm, 0.0 (.646 + .078 , 0.00) 22.4 mm (.882 ) 24 mm 360 mm (14.173 ) 24.4 mm + 2.0 mm, 0.0 (.961 + .070 , 0.00) 30.4 mm (1.197 )
http://onsemi.com 309 tape leader and trailer dimensions metric dimensions govern notes 1. there shall be a leader of 230 mm (9.05) minimum which may consist of carrier and/or cover tape followed by a minimum of 160 mm (6.30) of empty carrier tape sealed with cover tape. 2. there shall be a trailer of 160 mm (6.30) minimum of empty carrier tape sealed with cover tape. the entire carrier tape must release from the reel hub as the last portion of the tape unwinds from the reel without damage to the carrier tape and the remaining components in the cavities. trailer (note 2) 160 mm (6.30) min top cover tape end carrier tape leader (note 1) 390 mm (15.35) min cover tape start components electrical polarization metric dimensions govern two termination devices notes 1. all polarized components must be oriented in one direction. for components with two terminations the cathode shall be adjacent to the sprocket hole side. user direction of feed top cover tape removed
http://onsemi.com 310
http://onsemi.com 311 chapter 9 package outline dimensions
http://onsemi.com 312 package outline dimensions surmetic 40 case 1702 issue c b d f k a f k dim min max min max millimeters inches a 0.330 0.350 8.38 8.89 b 0.130 0.145 3.30 3.68 d 0.037 0.043 0.94 1.09 f --- 0.050 --- 1.27 k 1.000 1.250 25.40 31.75 notes: 1. lead diameter and finish not controlled within dimension f. style 1: pin 1. anode 2. cathode 2 1 mosorb case 41a02 issue a dim a min max min max millimeters 0.360 0.375 9.14 9.52 inches b 0.190 0.205 4.83 5.21 d 0.038 0.042 0.97 1.07 k 1.00 --- 25.40 --- p --- 0.050 --- 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. lead finish and diameter uncontrolled in dimension p. d k p p a k b
http://onsemi.com 313 package outline dimensions (continued) glass/plastic do41 case 5903 issue m b d k k f f a dim min max min max inches millimeters a 4.07 5.20 0.160 0.205 b 2.04 2.71 0.080 0.107 d 0.71 0.86 0.028 0.034 f --- 1.27 --- 0.050 k 27.94 --- 1.100 --- notes: 1. all rules and notes associated with jedec do-41 outline shall apply. 2. polarity denoted by cathode band. 3. lead diameter not controlled within f dimension. mini mosorb case 5904 issue m k a d k b dim min max min max inches millimeters a 5.97 6.60 0.235 0.260 b 2.79 3.05 0.110 0.120 d 0.76 0.86 0.030 0.034 k 27.94 --- 1.100 --- notes: 1. all rules and notes associated with jedec do-41 outline shall apply. 2. polarity denoted by cathode band. 3. lead diameter not controlled within f dimension.
http://onsemi.com 314 package outline dimensions (continued) glass do35/do204ah case 29902 issue a notes: 1. package contour optional within a and b heat slugs, if any, shall be included within this cylinder, but not subject to the minimum limit of b. 2. lead diameter not controlled in zone f to allow for flash, lead finish buildup and minor irregularities other than heat slugs. 3. polarity denoted by cathode band. 4. dimensioning and tolerancing per ansi y14.5m, 1982. all jedec dimensions and notes apply. dim min max min max inches millimeters a 3.05 5.08 0.120 0.200 b 1.52 2.29 0.060 0.090 d 0.46 0.56 0.018 0.022 f --- 1.27 --- 0.050 k 25.40 38.10 1.000 1.500 b d k k f f a sot23 (to236) case 31808 issue af style 22: pin 1. return 2. output 3. input style 6: pin 1. base 2. emitter 3. collector style 7: pin 1. emitter 2. base 3. collector style 8: pin 1. anode 2. no connection 3. cathode style 9: pin 1. anode 2. anode 3. cathode style 10: pin 1. drain 2. source 3. gate style 11: pin 1. anode 2. cathode 3. cathode-anode style 12: pin 1. cathode 2. cathode 3. anode style 13: pin 1. source 2. drain 3. gate style 14: pin 1. cathode 2. gate 3. anode style 15: pin 1. gate 2. cathode 3. anode style 16: pin 1. anode 2. cathode 3. cathode style 17: pin 1. no connection 2. anode 3. cathode style 18: pin 1. no connection 2. cathode 3. anode style 19: pin 1. cathode 2. anode 3. cathode-anode style 23: pin 1. anode 2. anode 3. cathode style 20: pin 1. cathode 2. anode 3. gate style 21: pin 1. gate 2. source 3. drain style 1 thru 5: cancelled style 24: pin 1. gate 2. drain 3. source d j k l a c b s h g v 3 1 2 dim a min max min max millimeters 0.1102 0.1197 2.80 3.04 inches b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material.
http://onsemi.com 315 package outline dimensions (continued) sc74 case 318f03 issue e style 1: pin 1. cathode 2. anode 3. cathode 4. cathode 5. anode 6. cathode 23 4 5 6 a l 1 s g d b h c 0.05 (0.002) dim min max min max millimeters inches a 0.1142 0.1220 2.90 3.10 b 0.0512 0.0669 1.30 1.70 c 0.0354 0.0433 0.90 1.10 d 0.0098 0.0197 0.25 0.50 g 0.0335 0.0413 0.85 1.05 h 0.0005 0.0040 0.013 0.100 j 0.0040 0.0102 0.10 0.26 k 0.0079 0.0236 0.20 0.60 l 0.0493 0.0649 1.25 1.65 m 0 10 0 10 s 0.0985 0.1181 2.50 3.00 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318f-01 and -02 obsolete. new standard 318f-03. m j k style 2: pin 1. no connection 2. collector 3. emitter 4. no connection 5. collector 6. base smc case 40303 issue b s a db j p k h c dim min max min max millimeters inches a 0.260 0.280 6.60 7.11 b 0.220 0.240 5.59 6.10 c 0.075 0.095 1.90 2.41 d 0.115 0.121 2.92 3.07 h 0.0020 0.0060 0.051 0.152 j 0.006 0.012 0.15 0.30 k 0.030 0.050 0.76 1.27 p 0.020 ref 0.51 ref s 0.305 0.320 7.75 8.13 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. d dimension shall be measured within dimension p.
http://onsemi.com 316 package outline dimensions (continued) smb d0214aa case 403a03 issue d a s d b j p k c h notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. d dimension shall be measured within dimension p. dim min max min max millimeters inches a 0.160 0.180 4.06 4.57 b 0.130 0.150 3.30 3.81 c 0.075 0.095 1.90 2.41 d 0.077 0.083 1.96 2.11 h 0.0020 0.0060 0.051 0.152 j 0.006 0.012 0.15 0.30 k 0.030 0.050 0.76 1.27 p 0.020 ref 0.51 ref s 0.205 0.220 5.21 5.59 sma case 403b01 issue o notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. s a db k j c h dim min max min max millimeters inches a 0.160 0.180 4.06 4.57 b 0.090 0.115 2.29 2.92 c 0.075 0.105 1.91 2.67 d 0.050 0.064 1.27 1.63 h 0.004 0.008 0.10 0.20 j 0.006 0.016 0.15 0.41 k 0.030 0.060 0.76 1.52 s 0.190 0.220 4.83 5.59
http://onsemi.com 317 package outline dimensions (continued) sod123 case 42504 issue c notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 1: pin 1. cathode 2. anode aaa aaa b d k a c e j 1 2 h dim min max min max millimeters inches a 0.055 0.071 1.40 1.80 b 0.100 0.112 2.55 2.85 c 0.037 0.053 0.95 1.35 d 0.020 0.028 0.50 0.70 e 0.01 --- 0.25 --- h 0.000 0.004 0.00 0.10 j --- 0.006 --- 0.15 k 0.140 0.152 3.55 3.85 sod323 case 47702 issue b notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters. 3. lead thickness specified per l/f drawing with solder plating. dim min max min max inches millimeters a 1.60 1.80 0.063 0.071 b 1.15 1.35 0.045 0.053 c 0.80 1.00 0.031 0.039 d 0.25 0.40 0.010 0.016 e 0.15 ref 0.006 ref h 0.00 0.10 0.000 0.004 j 0.089 0.177 0.0035 0.0070 k 2.30 2.70 0.091 0.106 note 3 a k 1 2 d b e h c j style 1: pin 1. cathode 2. anode
http://onsemi.com 318 package outline dimensions (continued) sc88a (sot323) case 419a01 issue e notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. dim a min max min max millimeters 1.80 2.20 0.071 0.087 inches b 1.15 1.35 0.045 0.053 c 0.80 1.10 0.031 0.043 d 0.10 0.30 0.004 0.012 g 0.65 bsc 0.026 bsc h --- 0.10 --- 0.004 j 0.10 0.25 0.004 0.010 k 0.10 0.30 0.004 0.012 n 0.20 ref 0.008 ref s 2.00 2.20 0.079 0.087 v 0.30 0.40 0.012 0.016 style 1: pin 1. base 2. emitter 3. base 4. collector 5. collector style 2: pin 1. anode 2. emitter 3. base 4. collector 5. cathode b 0.2 (0.008) mm 12 3 4 5 a g v s d 5 pl h c n j k b style 3: pin 1. anode 1 2. n/c 3. anode 2 4. cathode 2 5. cathode 1 style 4: pin 1. source 1 2. drain 1/2 3. source 1 4. gate 1 5. gate 2 style 5: pin 1. cathode 2. common anode 3. cathode 2 4. cathode 3 5. cathode 4 style 7: pin 1. base 2. emitter 3. base 4. collector 5. collector style 6: pin 1. emitter 2. base 3. emitter 4. collector 5. collector
http://onsemi.com 319 package outline dimensions (continued) sc88 (sot363) case 419b01 issue g notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. dim a min max min max millimeters 1.80 2.20 0.071 0.087 inches b 1.15 1.35 0.045 0.053 c 0.80 1.10 0.031 0.043 d 0.10 0.30 0.004 0.012 g 0.65 bsc 0.026 bsc h --- 0.10 --- 0.004 j 0.10 0.25 0.004 0.010 k 0.10 0.30 0.004 0.012 n 0.20 ref 0.008 ref s 2.00 2.20 0.079 0.087 v 0.30 0.40 0.012 0.016 b 0.2 (0.008) mm 123 a g v s h c n j k 654 b d 6 pl style 1: pin 1. emitter 2 2. base 2 3. collector 1 4. emitter 1 5. base 1 6. collector 2 style 3: cancelled style 2: cancelled style 4: pin 1. cathode 2. cathode 3. collector 4. emitter 5. base 6. anode style 5: pin 1. anode 2. anode 3. collector 4. emitter 5. base 6. cathode style 6: pin 1. anode 2 2. n/c 3. cathode 1 4. anode 1 5. n/c 6. cathode 2 style 7: pin 1. source 2 2. drain 2 3. gate 1 4. source 1 5. drain 1 6. gate 2 style 8: cancelled style 11: pin 1. cathode 2 2. cathode 2 3. anode 1 4. cathode 1 5. cathode 1 6. anode 2 style 9: pin 1. emitter 2 2. emitter 1 3. collector 1 4. base 1 5. base 2 6. collector 2 style 10: pin 1. source 2 2. source 1 3. gate 1 4. drain 1 5. drain 2 6. gate 2 style 12: pin 1. anode 2 2. anode 2 3. cathode 1 4. anode 1 5. anode 1 6. cathode 2 style 13: pin 1. anode 2. n/c 3. collector 4. emitter 5. base 6. cathode style 14: pin 1. vref 2. gnd 3. gnd 4. iout 5. ven 6. vcc style 15: pin 1. anode 2. anode 3. anode 4. cathode 5. cathode 6. cathode style 17: pin 1. base 1 2. emitter 1 3. collector 2 4. base 2 5. emitter 2 6. collector 1 style 16: pin 1. base 1 2. emitter 2 3. collector 2 4. base 2 5. emitter 1 6. collector 1 style 18: pin 1. vin1 2. vcc 3. vout2 4. vin2 5. gnd 6. vout1 style 19: pin 1. i out 2. gnd 3. gnd 4. v cc 5. v en 6. v ref
http://onsemi.com 320 package outline dimensions (continued) powermite case 45704 issue d dim min max min max inches millimeters a 1.75 2.05 0.069 0.081 b 1.75 2.18 0.069 0.086 c 0.85 1.15 0.033 0.045 d 0.40 0.69 0.016 0.027 f 0.70 1.00 0.028 0.039 h -0.05 +0.10 -0.002 +0.004 j 0.10 0.25 0.004 0.010 k 3.60 3.90 0.142 0.154 l 0.50 0.80 0.020 0.031 r 1.20 1.50 0.047 0.059 s notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a does not include mold flash, protrusions or gate burrs. mold flash, protrusions or gate burrs shall not exceed 0.15 (0.006) per side. s b m 0.08 (0.003) c s t a b s j k t h l j c d s b m 0.08 (0.003) c s t f term. 1 term. 2 r 0.50 ref 0.019 ref
http://onsemi.com 321 chapter 10 technical information, application notes and articles
http://onsemi.com 322 technical information, application notes and articles zener diode theory 323 . . . . . . . . . . . . . . . . . . . . . . . . . . . zener diode fabrication techniques 328 . . . . . . . . . . . . . reliability 332 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . zener diode characteristics 338 . . . . . . . . . . . . . . . . . . . . temperature compensated zeners 350 . . . . . . . . . . . . . . basic voltage regulation using zener diodes 354 . . . . zener protective circuits and techniques: basic design considerations 364 . . . . . . . . . . . . . . . . zener voltage sensing circuits and applications 374 . . miscellaneous applications of zener type devices 381 . . . . . . . . . . . . . . . . . . . . . . . . transient voltage suppression 383 . . . . . . . . . . . . . . . . . an784 402 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . an843 404 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . design considerations and performance of temperature compensated zener diodes 417 . . . . . mosorbs 422 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ar450 426 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . measurement of zener voltage to thermal equilibrium with pulsed test current 439 . . . . . . . . . . sales office list 447 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . standard document type definitions 448 . . . . . . . . . . . .
http://onsemi.com 323 zener diode theory introduction the zener diode is a semiconductor device unique in its mode of operation and completely unreplaceable by any other electronic device. because of its unusual properties it fills a long-standing need in electronic circuitry. it provides, among other useful functions, a constant voltage reference or voltage control element available over a wide spectrum of voltage and power levels. the zener diode is unique among the semiconductor family of devices because its electrical properties are derived from a rectifying junction which operates in the reverse breakdown region. in the sections that follow, the reverse biased rectifying junction, some of the terms associated with it, and properties derived from it will be discussed fully. the zener diode is fabricated from the element silicon. special techniques are applied in the fabrication of zener diodes to create the required properties. this manual was prepared to acquaint the engineer, the equipment designer and manufacturer, and the experimenter with the fundamental principles, design characteristics, applications and advantages of this important semiconductor device. semiconductor theory the active portion of a zener diode is a semiconductor pn junction. pn junctions are formed in various kinds of semiconductor devices by several techniques. among these are the widely used techniques known as alloying and diffusion which are utilized in fabricating zener pn junctions to provide excellent control over zener breakdown voltage. at the present time, zener diodes use silicon as the basic material in the formation of their pn junction. silicon is in group iv of the periodic table (tetravalent) and is classed as a asemiconductoro due to the fact that it is a poor conductor in a pure state. when controlled amounts of certain aimpuritieso are added to a semiconductor it becomes a better conductor of electricity. depending on the type of impurity added to the basic semiconductor, its conductivity may take two different forms, called p- and n-type respectively. n-type conductivity in a semiconductor is much like the conductivity due to the drift of free electrons in a metal. in pure silicon at room temperature there are too few free electrons to conduct current. however, there are ways of introducing free electrons into the crystal lattice as we shall now see. silicon is a tetravalent element, one with four valence electrons in the outer shell; all are virtually locked into place by the covalent bonds of the crystal lattice structure, as shown schematically in figure 1a. when controlled amounts of donor impurities (group v elements) such as phosphorus are added, the pentavalent phosphorus atoms entering the lattice structure provide extra electrons not required by the covalent bonds. these impurities are called donor impurities since they adonateo a free electron to the lattice. these donated electrons are free to drift from negative to positive across the crystal when a field is applied, as shown in figure 1b. the ano nomenclature for this kind of conductivity implies anegativeo charge carriers. in p-type conductivity, the charges that carry electric current across the crystal act as if they were positive char ges. we know that electricity is always carried by drifting electrons in any material, and that there are no mobile positively charged carriers in a solid. positive charge carriers can exist in gases and liquids in the form of positive ions but not in solids. the positive character of the current flow in the semiconductor crystal may be thought of as the movement of vacancies (called holes) in the covalent lattice. these holes drift from positive toward negative in an electric field, behaving as if they were positive carriers. p-type conductivity in semiconductors result from adding acceptor impurities (group iii elements) such as boron to silicon to the semiconductor crystal. in this case, boron atoms, with three valence electrons, enter the tetravalent silicon lattice. since the covalent bonds cannot be satisfied by only three electrons, each acceptor atom leaves a hole in the lattice which is deficient by one electron. these holes readily accept electrons introduced by external sources or created by radiation or heat, as shown in figure 1c. hence the name acceptor ion or acceptor impurity. when an external circuit is connected, electrons from the current source afill upo these holes from the negative end and jump from hole to hole across the crystal or one may think of this process in a slightly different but equivalent way, that is as the displacement of positive holes toward the negative terminal. it is this drift of the positively charged holes which accounts for the term p-type conductivity. when semiconductor regions of n- and p-type conductivities are formed in a semiconductor crystal adjacent to each other, this structure is called a pn junction. such a junction is responsible for the action of both zener diodes and rectifier devices, and will be discussed in the next section.
http://onsemi.com 324 figure 1. semiconductor structure - si si si si si si si si si p si si si si si si b si si si si applied field applied field + electrons are locked in covalent bonds locked covalent bond electrons free electron from phosphorous atom drifts toward applied positive pole. incompleted covalent bond this electron jumps into hole left by boron atom. hole position is displaced to right. this results in a drift of holes toward the negative pole, giving them the character of mobile positive charges. (a) lattice structures of pure silicon (b) n-type silicon (c) p-type silicon - the semiconductor diode in the forward-biased pn junction, figure 2a, the p region is made more positive than the n region by an external circuit. under these conditions there is a very low resistance to current flow in the circuit. this is because the holes in the positive p-type material are very readily attracted across the junction interface toward the negative n-type side. conversely, electrons in the n-type are readily attracted by the positive polarity in the other direction. when a pn junction is reverse biased, the p-type side is made more negative than the n-type side. (see figure 2b.) at voltages below the breakdown of the junction, there is very little current flow across the junction interface. at first thought one would expect no reverse current under reverse bias conditions, but several effects are responsible for this small current. under this condition the positive holes in the p-type semiconductor are repelled from the junction interface by the positive polarity applied to the n side, and conversely, the electrons in the n material are repelled from the interface by the negative polarity of the p side. this creates a region extending from the junction interface into both p- and n-type materials which is completely free of charge carriers, that is, the region is depleted of its charge carriers. hence, this region is usually called the depletion region. although the region is free of charge carriers, the p-side of the depletion region will have an excess negative charge due to the presence of acceptor ions which are, of course, fixed in the lattice; while the n-side of the depletion region has an excess positive charge due to the presence of donor ions. t hese opposing regions of charged ions create a strong electric field across the pn junction responsible for the creation of reverse current. the semiconductor regions are never perfect; there are always a few free electrons in p material and few holes in n material. a more significant factor, however, is the fact that great magnitudes of electron-hole pairs may be thermally generated at room temperatures in the semiconductor. when these electron-hole pairs are created within the depletion region, then the intense electric field mentioned in the above paragraph will cause a small current to flow. this small current is called the reverse saturation current, and tends to maintain a relatively constant value for a fixed temperature at all voltages. the reverse saturation current is usually negligible compared with the current flow when the junction is forward biased. hence, we see that the pn junction, when not reverse biased beyond breakdown voltage, will conduct heavily in only one direction. when this property is utilized in a circuit we are employing the pn junction as a rectifier. let us see how we can employ its reverse breakdown characteristics to an advantage. as the reverse voltage is increased to a point called the voltage breakdown point and beyond, current conduction across the junction interface increases rapidly. the break from a low value of the reverse saturation current to heavy conductance is very sharp and well defined in most pn junctions. it is called the zener knee. when reverse voltages greater than the voltage breakdown point are applied to the pn junction, the voltage drop across the pn junction remains essentially constant at the value of the breakdown voltage for a relatively wide range of currents. this region beyond the voltage breakdown point is called the zener control region.
http://onsemi.com 325 n applied field p large current several volts applied field np very small current figure 2. effects of junction bias charges from both p and n regions drift across junction at very low applied voltages. at applied voltages below the critical breakdown level only a few charges drift across the interface. (a) forward-based pn junction (b) reverse-biased pn junction zener control region: voltage breakdown mechanisms figure 3 depicts the extension of reverse biasing to the point where voltage breakdown occurs. although all pn junctions exhibit a voltage breakdown, it is important to know that there are two distinct voltage breakdown mechanisms. one is called zener br eakdown and the other is called avalanche breakdown. in zener breakdown the value of breakdown voltage decreases as the pn junction temperature increases; while in avalanche breakdown the value of the breakdown voltage increases as the pn junction temperature increases. typical diode breakdown characteristics of each category are shown in figure 4. the factor determining which of the two breakdown mechanisms occurs is the relative concentrations of the impurities in the materials which comprise the junction. if two different resistivity p-type materials are placed against two separate but equally doped low-resistivity pieces of n-type materials, the depletion region spread in the low resistivity p-type material will be smaller than the depletion region spread in the high resistivity p-type material. moreover, in both situations little of the resultant depletion width lies in the n material if its resistivity is low compared to the p-type material. in other words, the depletion region always spreads principally into the material having the highest resistivity. also, the electric field (voltage per unit length) in the less resistive material is greater than the electric field in the material of greater resistivity due to the figure 3. reverse characteristic extended to show breakdown effect slope i rev v breakdown v rev presence of more ions/unit volume in the less resistive material. a junction that results in a narrow depletion region will therefore develop a high field intensity and breakdown by the zener mechanism. a junction that results in a wider depletion region and, thus, a lower field intensity will break down by the avalanche mechanism before a zener breakdown condition can be reached. the zener mechanism can be described qualitatively as follows: because the depletion width is very small, the application of low reverse bias (5 volts or less) will cause a field across the depletion region on the order of 3 x 10 5 v/cm. a field of such high magnitude exerts a large force on the valence electrons of a silicon atom, tending to separate them
http://onsemi.com 326 figure 4. typical breakdown diode characteristics. note effects of temperature for each mechanism (a) zener breakdown of a pn function v rev (volts) (b) avalanche breakdown of a pn function i rev i rev 4321 v rev (volts) 30 25 20 15 10 5 25 c65 c25 c 65 c from their respective nuclei. actual rupture of the covalent bonds occurs when the field approaches 3 x 10 5 v/cm. thus, electron-hole pairs are generated in large numbers and a sudden increase of current is observed. although we speak of a rupture of the atomic structure, it should be understood that this generation of electron-hole pairs may be carried on continuously as long as an external source supplies additional electrons. if a limiting resistance in the circuit external to the diode junction does not prevent the current from increasing to high values, the device may be destroyed due to overheating. the actual critical value of field causing zener breakdown is believed to be approximately 3x10 5 v/cm. on most commercially available silicon diodes, the maximum value of voltage breakdown by the zener mechanism is 8 volts. in order to fabricate devices with higher voltage breakdown characteristics, materials with higher resistivity, and consequently, wider depletion regions are required. these wide depletion regions hold the field strength down below the zener breakdown value (3 x 10 5 v/cm). consequently, for devices with breakdown voltage lower than 5 volts the zener mechanism predominates, between 5 and 8 volts both zener and an avalanche mechanism are involved, while above 8 volts the avalanche mechanism alone takes over. the decrease of zener breakdown voltage as junction temperature increases can be explained in terms of the energies of the valence electrons. an increase of temperature increases the energies of the valence electrons. this weakens the bonds holding the electrons and consequently, less applied voltage is necessary to pull the valence electrons from their position around the nuclei. thus, the breakdown voltage decreases as the temperature increases. the dependence on temperature of the avalanche breakdown mechanism is quite different. here the depletion region is of sufficient width that the carriers (electrons or holes) can suffer collisions before traveling the region completely i.e., the depletion region is wider than one mean-free path (the average distance a carrier can travel before combining with a carrier of opposite conductivity). therefore, when temperature is increased, the increased lattice vibration shortens the distance a carrier travels before colliding and thus requires a higher voltage to get it across the depletion region. as established earlier, the applied reverse bias causes a small movement of intrinsic electrons from the p material to the potentially positive n material and intrinsic holes from the n material to the potentially negative p material (leakage current). as the applied voltage becomes larger, these electrons and holes increasingly accelerate. there are also collisions between these intrinsic particles and bound electrons as the intrinsic particles move through the depletion region. if the applied voltage is such that the intrinsic electrons do not have high velocity, then the collisions take some energy from the intrinsic particles, altering their velocity. if the applied voltage is increased, collision with a valence electron will give considerable energy to the electron and it will break free of its covalent bond. thus, one electron by collision, has created an electron-hole pair. these secondary particles will also be accelerated and participate in collisions which generate new electron-hole pairs. this phenomenon is called carrier multiplication. electron-hole pairs are generated so quickly and in such large numbers that there is an apparent avalanche or self-sustained multiplication process (depicted graphically in figure 5). the junction is said to be in breakdown and the current is limited only by resistance external to the junction. zener diodes above 7 to 8 volts exhibit avalanche breakdown. as junction temperature increases, the voltage breakdown point for the avalanche mechanism increases. this effect can be explained by considering the vibration displacement of atoms in their lattice increases, and this increased displacement corresponds to an increase in the probability that intrinsic particles in the depletion region will collide with the lattice atoms. if the probability of an intrinsic particle-atom collision increases, then the probability that a
http://onsemi.com 327 figure 5. pn junction in avalanche breakdown when the applied voltage is above the breakdown point, a few injected electrons receive enough acceleration from the field to generate new electrons by collision. during this process the voltage drop across the junction remains constant. r s absorbs excess voltage. r s np large current constant voltage drop reversebiased pn junction in avalanche given intrinsic particle will obtain high momentum decreases, and it follows that the low momentum intrinsic particles are less likely to ionize the lattice atoms. naturally, increased voltage increases the acceleration of the intrinsic particles, providing higher mean momentum and more electron-hole pairs production. if the voltage is raised sufficiently, the mean momentum becomes great enough to create electron-hole pairs and carrier multiplication results. hence, for increasing temperature, the value of the avalanche breakdown voltage increases. volt-ampere characteristics the zener volt-ampere characteristics for a typical 30 volt zener diode is illustrated in figure 6. it shows that the zener diode conducts current in both directions; the forward current i f being a function of forward voltage v f . note that i f is small until v f 0.65 v; then i f increases very rapidly. for v f > 0.65 v i f is limited primarily by the circuit resistance external to the diode. z z k v z z zt i r 30 20 10 0 0.5 1 1.5 15 10 5 0 0.5 1 1.5 reverse characteristic v r (volts) v f (volts) i (amps) f reverse current (amps) figure 6. zener diode characteristics i zt i zm 1.40 a i zk = 5 ma forward characteristic typical 420 ma the reverse current is a function of the reverse voltage v r but for most prno tagactical purposes is zero until the reverse voltage approaches v z , the pn junction breakdown voltage, at which time the reverse current increases very rapidly. since the reverse current is small for v r < v z , but great for v r > v z each of the current regions is specified by a different symbol. for the leakage current region, i.e. non-conducting region, between 0 volts and v z , the reverse current is denoted by the symbol i r ; but for the zener control region, v r v z , the reverse current is denoted by the symbol i z . i r is usually specified at a reverse voltage v r 0.8 v z . the pn junction breakdown voltage, v z , is usually called the zener voltage, regardless whether the diode is of the zener or avalanche breakdown type. commercial zener diodes are available with zener voltages from about 1.8 v 400 v. for most applications the zener diode is operated well into the breakdown region (i zt to i zm ). most manufacturers give an additional specification of i zk (= 5 ma in figure 6) to indicate a minimum operating current to assure reasonable regulation. this minimum current i zk varies in the various types of zener diodes and, consequently, is given on the data sheets. the maximum zener current i zm should be considered the maximum reverse current recommended by the manufacturer. values of i zm are usually given in the data sheets. between the limits of i zk and i zm , which are 5 ma and 1400 ma (1.4 amps) in the example of figure 6, the voltage across the diode is essentially constant, and v z . this plateau region has, however, a large positive slope such that the precise value of reverse voltage will change slightly as a function of i z . for any point on this plateau region one may calculate an impedance using the incremental magnitudes of the voltage and current. this impedance is usually called the zener impedance z z , and is specified for most zener diodes. most manufacturers measure the maximum zener impedance at two test points on the plateau region. the first is usually near the knee of the zener plateau, z zk , and the latter point near the midrange of the usable zener current excursion. two such points are illustrated in figure 6. this section was intended to introduce the reader to a few of the major terms used with zener diodes. a complete description of these terms may be found in chapter four. in chapter four a full discussion of zener leakage, dc breakdown, zener impedance, temperature coefficients and many other topics may be found.
http://onsemi.com 328 zener diode fabrication techniques introduction a brief exposure to the techniques used in the fabrication of zener diodes can provide the engineer with additional insight using zeners in their applications. that is, an understanding of zener fabrication makes the capabilities and limitations of the zener diode more meaningful. this chapter discusses the basic steps in the fabrication of the zener from crystal growing through final testing. zener diode wafer fabrication the major steps in the manufacture of zeners are provided in the process flow in figure 1. it is important to point out that the manufacturing steps vary somewhat from manufacturer to manufacturer, and also vary with the type of zener diode produced. this is driven by the type of package required as well as the electrical characteristics desired. for example, alloy diffused devices provide excellent low voltage reference with low leakage characteristics but do not have the same surge carrying capability as diffused diodes. the manufacturing process begins with the growing of high quality silicon crystals. crystals for on semiconductor zener diodes are grown using the czochralski technique, a widely used process which begins with ultra-pure polycrystalline silicon. the polycrystalline silicon is first melted in a nonreactive crucible held at a temperature just above the melting point. a carefully controlled quantity of the desired dopant impurity, such as phosphorus or boron is added. a high quality seed crystal of the desired crystalline orientation is then lowered into the melt while rotating. a portion of this seed crystal is allowed to melt into the molten silicon. the seed is then slowly pulled and continues to rotate as it is raised from the melt. as the seed is raised, cooling takes place and material from the melt adheres to it, thus forming a single crystal ingot. with this technique, ingots with diameters of several inches can be fabricated. figure 1. general flow of the zener diode process silicon crystal growing wafer preparation oxide passivation wafer thinning anode metallization junction formation cathode metallization wafer testing wafer dicing test lead finish assembly mark test package ship
http://onsemi.com 329 figure 2. basic fabrication steps in the silicon planar process: a) oxide formation, b) selective oxide removal, c) deposition of dopant atoms, d) junction formation by diffusion of dopant atoms. silicon dioxide growth sio 2 si (a) silicon dioxide selectively removed (b) (c) dopant atoms deposited onto the exposed silicon (d) dopant atoms diffuse into silicon but not appreciably into the silicon dioxide once the single-crystal silicon ingot is grown, it is tested for doping concentration (resistivity), undesired impurity levels, and minority carrier lifetime. the ingot is then sliced into thin, circular wafers. the wafers are then chemically etched to remove saw damage and polished in a sequence of successively finer polishing grits until a mirror-like defect free surface is obtained. the wafers are then cleaned and placed in vacuum sealed wafer carriers to prevent any contamination from getting on them. at this point, the wafers are ready to begin device fabrication. zener diodes can be manufactured using different processing techniques such as planar processing or mesa etched processing. the majority of on semiconductor zener diodes are manufactured using the planar technique as shown in figure 2. the planar process begins by growing an ultra-clean protective silicon dioxide passivation layer. the oxide is typically grown in the temperature range of 900 to 1200 degrees celcius. once the protective layer of silicon dioxide has been formed, it must be selectively removed from those areas into which dopant atoms will be introduced. this is done using photolithographic techniques. first a light sensitive solution called photo resist is spun onto the wafer. the resist is then dried and a photographic negative or mask is placed over the wafer. the resist is then exposed to ultraviolet light causing the molecules in it to cross link or polymerize becoming very rigid. those areas of the wafer that are protected by opaque portions of the mask are not exposed and are developed away. the oxide is then etched forming the exposed regions in which the dopant will be introduced. the remaining resist is then removed and the wafers carefully cleaned for the doping steps. dopant is then introduced onto the wafer surface using various techniques such as aluminum alloy for low voltage devices, ion-implantation, spin-on dopants, or chemical vapor deposition. once the dopant is deposited, the junctions are formed in a subsequent high temperature (1100 to 1250 degrees celcius are typical) drive-in. the resultant junction profile is determined by the background concentration of the starting substrate, the amount of dopant placed at the surface, and amount of time and temperature used during the dopant drive-in. this junction profile determines the electrical characteristics of the device. during the drive-in cycle, additional passivation oxide is grown providing additional protection for the devices. after junction formation, the wafers are then processed through what is called a getter process. the getter step utilizes high temperature and slight stress provided by a highly doped phosphosilicate glass layer introduced into the backside of the wafers. this causes any contaminants in the area of the junction to diffuse away from the region. this serves to improve the reverse leakage characteristic and the stability of the device. following the getter process, a second photo resist step opens the contact area in which the anode metallization is deposited. metal systems for on semiconductor's zener diodes are determined by the requirements of the package. the metal systems are deposited in ultra-clean vacuum chambers utilizing electron-beam evaporation techniques. once the metal is deposited, photo resist processing is utilized to form the desired patterns. the wafers are then lapped to their final thickness and the cathode metallization deposited using the same e-beam process.
http://onsemi.com 330 the quality of the wafers is closely monitored throughout the process by using statistical process control techniques and careful microscopic inspections at critical steps. special wafer handling equipment is used throughout the manufacturing process to minimize contamination and to avoid damaging the wafers in any way. this further enhances the quality and stability of the devices. upon completion of the fabrication steps, the wafers are electrically probed, inspected, and packaged for shipment to the assembly operations. all on semiconductor zener diode product is sawn using 100% saw-through techniques stringently developed to provide high quality silicon die. zener diode assembly surmetic 30, 40 and mosorb the plastic packages (surmetic 30, 40 and mosorbs) are assembled using oxygen free high conductivity copper leads for efficient heat transfer from the die and allowing maximum power dissipation with a minimum of external heatsinking. figure 3 shows typical assembly. the leads are of nail head construction, soldered directly to the die, which further enhances the heat dissipating capabilities of the package. the surmetic 30s, 40s and mosorbs are basically assembled in the same manner; the only difference being the mosorbs are soldered together using a solder disc between the lead and die whereas the surmetic 30s and surmetic 40s utilize pre-soldered leads. assembly is started on the surmetic 30 and 40 by loading the leads into assembly boats and pre-soldering the nail heads. after pre-soldering, one die is then placed into each cavity of one assembly boat and another assembly boat is then mated to it. since the mosorbs do not use pre-soldered leads, the leads are put into the assembly boat, a solder disc is placed into each cavity and then a die is put in on top. a solder disc is put in on top of the die. another assembly boat containing only leads is mated to the boat containing the leads, die, and two solder discs. the boats are passed through the assembly furnace; this operation requires only one pass through the furnace. after assembly, the leads on the surmetic 30s, 40s and mosorbs are plated with a tin-lead alloy making them readily solderable and corrosion resistant. double slug (do-35 and do-41) double slugs receive their name from the dumet slugs, one attached to one end of each lead. these slugs sandwich the pre-tinned die between them and are hermetically sealed to the glass envelope or body during assembly. figure 4 shows typical assembly. the assembly begins with the copper clad steel leads being loaded into assembly aboats.o every other boat load of leads has a glass body set over the slug. a pre-tinned die is placed into each glass body and the other boat load of leads is mated to the boat holding the leads, body and die. these mated boats are then placed into the assembly furnace where the total mass is heated. each glass body melts; and as the boat proceeds through the cooling portion of the furnace chamber, the tin which has wetted to each slug solidifies forming a bond between the die and both slugs. the glass hardens, attaching itself to the sides of the two slugs forming the hermetic seal. the above illustrates how the diodes are completely assembled using a single furnace pass minimizing assembly problems. the encapsulated devices are then processed through lead finish. this consists of dipping the leads in molten tin/lead solder alloy. the solder dipped leads produce an external finish which is tarnish-resistant and very solderable. figure 3. double-slug plastic zener construction figure 4. double slug glass zener construction ofhc copper lead, solder plated plastic (thermo set) encapsulated nailhead lead zener die sn pb ofhc copper lead, solder plated lead, steel, cu clad solder dipped slug dumet glass sleeve passivated zener die nailhead lead
http://onsemi.com 331 zener diode test, mark and packaging double slug, surmetic 30, 40 and mosorb after lead finish, all products are final tested, whether they are double slug or of surmetic construction, all are 100 percent final tested for zener voltage, leakage current, impedance and forward voltage drop. process average testing is used which is based upon the averages of the previous lots for a given voltage line and package type. histograms are generated for the various parameters as the units are being tested to ensure that the lot is testing well to the process average and compared against other lots of the same voltage. after testing, the units are marked as required by the specification. the markers are equipped to polarity orient the devices as well as perform 100% redundant test prior to packaging. after marking, the units are packaged either in abulko form or taped and reeled or taped and ammo packed to accommodate automatic insertion.
http://onsemi.com 332 reliability introduction on semiconductor's quality system maintains acontinuous product improvemento goals in all phases of the operation. statistical process control (spc), quality control sampling, reliability audits and accelerated stress testing techniques monitor the quality and reliability of its products. management and engineering skills are continuously upgraded through training programs. this maintains a unified focus on six sigma quality and reliability from the inception of the product to final customer use. statistical process control on semiconductor's discrete group is continually pursuing new ways to improve product quality. initial design improvement is one method that can be used to produce a superior product. equally important to outgoing product quality is the ability to produce product that consistently conforms to specification. process variability is the basic enemy of semiconductor manufacturing since it leads to product variability. used in all phases of on semiconductor's product manufacturing, statistical process control (spc) replaces variability with predictability. the traditional philosophy in the semiconductor industry has been adherence to the data sheet specification. using spc methods assures the product will meet specific process requirements throughout the manufacturing cycle. the emphasis is on defect prevention, not detection. predictability through spc methods requires the manufacturing culture to focus on constant and permanent improvements. usually these improvements cannot be bought with state-of-the-art equipment or automated factories. with quality in design, process and material selection, coupled with manufacturing predictability, on semiconductor can produce world class products. the immediate effect of spc manufacturing is predictability through process controls. product centered and distributed well within the product specification benefits on semiconductor with fewer rejects, improved yields and lower cost. the direct benefit to on semiconductor's customers includes better incoming quality levels, less inspection time and ship-to-stock capability. circuit performance is often dependent on the cumulative effect of component variability. tightly controlled component distributions give the customer greater circuit predictability. many customers are also converting to just-in-time (jit) delivery programs. these programs require improvements in cycle time and yield predictability achievable only through spc techniques. the benefit derived from spc helps the manufacturer meet the customer's expectations of higher quality and lower cost product. ultimately, on semiconductor will have six sigma capability on all products. this means parametric distributions will be centered within the specification limits with a product distribution of plus or minus six sigma about mean. six sigma capability, shown graphically in figure 1, details the benefit in terms of yield and outgoing quality levels. this compares a centered distribution versus a 1.5 sigma worst case distribution shift. new product development at on semiconductor requires more robust design features that make them less sensitive to minor variations in processing. these features make the implementation of spc much easier. a complete commitment to spc is present throughout on semiconductor. all managers, engineers, production operators, supervisors and maintenance personnel have received multiple training courses on spc techniques. manufacturing has identified 22 wafer processing and 8 assembly steps considered critical to the processing of zener products. processes, controlled by spc methods, that have shown significant improvement are in the diffusion, photolithography and metallization areas. to better understand spc principles, brief explanations have been provided. these cover process capability, implementation and use. figure 1. aoql and yield from a normal distribution of product with 6 s capability standard deviations from mean distribution centered distribution shifted 1.5 at 3 s 2700 ppm defective 99.73% yield at 4 s 63 ppm defective 99.9937% yield at 5 s 0.57 ppm defective 99.999943% yield at 6 s 0.002 ppm defective 99.9999998% yield 66810 ppm defective 93.32% yield 6210 ppm defective 99.379% yield 233 ppm defective 99.9767% yield 3.4 ppm defective 99.99966% yield 6 s 5s 4 s 3 s 2 s 1 s 0 1 s 2 s 3 s 4 s 5 s 6 s process capability one goal of spc is to ensure a process is capable . process capability is the measurement of a process to produce products consistently to specification requirements. the purpose of a process capability study is to separate the inherent random variability from assignable causes . once completed, steps are taken to identify and eliminate the most significant assignable causes. random variability is generally present in the system and does not fluctuate. sometimes, these are considered basic limitations associated with the machinery, materials, personnel skills or manufacturing methods. assignable cause inconsistencies relate to time variations in yield, performance or reliability.
http://onsemi.com 333 figure 2. impact of assignable causes on process predictable figure 3. difference between process control and process capability ? ? ? ? ? ? ? ? ? process aunder controlo all assignable causes are removed and future distribution is predictable. prediction time size size time prediction size time out of control (assignable causes present) in control assignable causes eliminated size time in control but not capable (variation from random variability excessive) lower specification limit upper specification limit in control and capable (variation from random variability reduced) ? ? traditionally, assignable causes appear to be random due to the lack of close examination or analysis. figure 2 shows the impact on predictability that assignable cause can have. figure 3 shows the difference between process control and process capability. a process capability study involves taking periodic samples from the process under controlled conditions. the performance characteristics of these samples are charted against time. in time, assignable causes can be identified and engineered out. careful documentation of the process is key to accurate diagnosis and successful removal of the assignable causes. sometimes, the assignable causes will remain unclear requiring prolonged experimentation. elements which measure process variation control and capability are cp and cpk respectively. cp is the specification width divided by the process width or cp = (specification width) / 6 s. cpk is the absolute value of the closest specification value to the mean, minus the mean, divided by half the process width or cpk = | closest specification e x / 3 s . at on semiconductor, for critical parameters, the process capability is acceptable with a cpk = 1.33. the desired process capability is a cpk = 2 and the ideal is a cpk = 5. cpk, by definition, shows where the current production process fits with relationship to the specification limits. off center distributions or excessive process variability will result in less than optimum conditions. spc implementation and use the discrete group uses many parameters that show conformance to specification. some parameters are sensitive to process variations while others remain constant for a given product line. often, specific parameters are influenced when changes to other parameters occur. it is both impractical and unnecessary to monitor all parameters using spc methods. only critical parameters that are sensitive to process variability are chosen for spc monitoring. the process steps affecting these critical parameters must be identified also. it is equally important to find a measurement in these process steps that correlates with product performance. this is called a critical process parameter. once the critical process parameters are selected, a sample plan must be determined. the samples used for measurement are organized into rational subgroups of approximately 2 to 5 pieces. the subgroup size should be such that variation among the samples within the subgroup remain small. all samples must come from the same source e.g., the same mold press operator, etc.. subgroup data should be collected at appropriate time intervals to detect variations in the process. as the process begins to show improved stability, the interval may be increased. the data collected must be carefully documented and maintained for later correlation. examples of common documentation entries would include operator, machine, time, settings, product type, etc..
http://onsemi.com 334 figure 4. example of process control chart showing oven temperature data 147 148 149 150 151 152 153 154 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 0 1 2 3 4 5 6 7 ucl = 152.8 = 150.4 lcl = 148.0 ucl = 7.3 = 3.2 lcl = 0 x r once the plan is established, data collection may begin. the data collected will generate x and r values that are plotted with respect to time. x refers to the mean of the values within a given subgroup, while r is the range or greatest value minus least value. when approximately 20 or more x and r values have been generated, the average of these values is computed as follows: x = (x + x 2 + x 3 + ...)/k r = (r1 + r2 + r3 + ...)/k where k = the number of subgroups measured. the values of x and r are used to create the process control chart. control charts are the primary spc tool used to signal a problem. shown in figure 4, process control charts show x and r values with respect to time and concerning reference to upper and lower control limit values. control limits are computed as follows: r upper control limit = ucl r = d4 r r lower control limit lcl r = d3 r x upper control limit = ucl x = x + a2 r x lower control limit = lcl x = x a where d4, d3 and a2 are constants varying by sample size, with values for sample sizes from 2 to 10 shown in the following partial table: control charts are used to monitor the variability of critical process parameters. the r chart shows basic problems with piece to piece variability related to the process. the x chart can often identify changes in people, machines, methods, etc. the source of the variability can be difficult to find and may require experimental design techniques to identify assignable causes. some general rules have been established to help determine when a process is out-of-control . figure 5a shows a control chart subdivided into zones a, b, and c corresponding to 3 sigma, 2 sigma, and 1 sigma limits respectively. in figure 5b through figure 5e four of the tests that can be used to identify excessive variability and the presence of assignable causes are shown. as familiarity with a given process increases, more subtle tests may be employed successfully. once the variability is identified, the cause of the variability must be determined. normally, only a few factors have a significant impact on the total variability of the process. the importance of correctly identifying these factors is stressed in the following example. suppose a process variability depends on the variance of five factors a, b, c, d and e. each has a variance of 5, 3, 2, 1 and 0.4 respectively. since: s tot = s a 2 + s b 2 + s c 2 + s d 2 + s e 2 s tot = 5 2 + 3 2 + 2 2 + 1 2 + (0.4) 2 = 6.3 n2345678910 d 4 3.27 2.57 2.28 2.11 2.00 1.92 1.86 1.82 1.78 d 3 * * * * * 0.08 0.14 0.18 0.22 a 2 1.88 1.02 0.73 0.58 0.48 0.42 0.37 0.34 0.31 * for sample sizes below 7, the lcl r would technically be a negative number; in those cases there is no lower control limit; this means that for a subgroup size 6, six aidenticalo measurements would not be unreasonable.
http://onsemi.com 335 now if only d is identified and eliminated then; s tot = 5 2 + 3 2 + 2 2 + (0.4) 2 = 6.2 this results in less than 2% total variability improvement. if b, c and d were eliminated, then; s tot = 5 2 + (0.4) 2 = 5.02 this gives a considerably better improvement of 23%. if only a is identified and reduced from 5 to 2, then; s tot = 2 2 + 3 2 + 2 2 + 1 2 + (0.4) 2 = 4.3 identifying and improving the variability from 5 to 2 gives us a total variability improvement of nearly 40%. most techniques may be employed to identify the primary assignable cause(s). out-of-control conditions may be correlated to documented process changes. the product may be analyzed in detail using best versus worst part comparisons or product analysis lab equipment. multi-variance analysis can be used to determine the family of variation (positional, critical or temporal). lastly, experiments may be run to test theoretical or factorial analysis. whatever method is used, assignable causes must be identified and eliminated in the most expeditious manner possible. after assignable causes have been eliminated, new control limits are calculated to provide a more challenging variability criteria for the process. as yields and variability improve, it may become more difficult to detect improvements because they become much smaller. when all assignable causes have been eliminated and the points remain within control limits for 25 groups, the process is said to be in a state of control. summary on semiconductor is committed to the use of statistical process controls. these principles, used throughout manufacturing, have already resulted in many significant improvements to the processes. continued dedication to the spc culture will allow on semiconductor to reach the six sigma and zero defect capability goals. spc will further enhance the commitment to total customer satisfaction . ucl lcl ucl ucl ucl ucl lcl lcl lcl lcl centerline a b c c b a a b c c b a a b c c b a a b c c b a zone a (+ 3 sigma) zone b (+ 2 sigma) zone c (+ 1 sigma) zone c ( 1 sigma) zone b ( 2 sigma) zone a ( 3 sigma) figure 5a. control chart zones figure 5b. one point outside control limit indicating excessive variability figure 5c. two out of three points in zone a or beyond indicating excessive variability figure 5d. four out of five points in zone b or beyond indicating excessive variability figure 5e. seven out of eight points in zone c or beyond indicating excessive variability
http://onsemi.com 336 reliability stress tests the following gives brief descriptions of the reliability tests commonly used in the reliability monitoring program. not all of the tests listed are performed on each product. other tests may be performed when appropriate. in addition some form of preconditioning may be used in conjunction with the following tests. autoclave (aka, pressure cooker) autoclave is an environmental test which measures device resistance to moisture penetration and the resultant effects of galvanic corrosion. autoclave is a highly accelerated and destructive test. typical test conditions : t a = 121 c, rh = 100%, p = 1 atmosphere (15 psig), t = 24 to 96 hours common failure modes : parametric shifts, high leakage and/or catastrophic common failure mechanisms : die corrosion or contaminants such as foreign material on or within the package materials. poor package sealing high humidity high temperature bias (h3tb or h3trb) this is an environmental test designed to measure the moisture resistance of plastic encapsulated devices. a bias is applied to create an electrolytic cell necessary to accelerate corrosion of the die metallization. with time, this is a catastrophically destructive test. typical test conditions : t a = 85 c to 95 c, rh = 85% to 95%, bias = 80% to 100% of data book max. rating, t = 96 to 1750 hours common failure modes : parametric shifts, high leakage and/or catastrophic common failure mechanisms : die corrosion or contaminants such as foreign material on or within the package materials. poor package sealing military reference : mil-std-750, method 1042 high temperature reverse bias (htrb) the purpose of this test is to align mobile ions by means of temperature and voltage stress to form a high-current leakage path between two or more junctions. typical test conditions : t a = 85 c to 150 c, bias = 80% to 100% of data book max. rating, t = 120 to 1000 hours common failure modes : parametric shifts in leakage common failure mechanisms : ionic contamination on the surface or under the metallization of the die military reference : mil-std-750, method 1039 high temperature storage life (htsl) high temperature storage life testing is performed to accelerate failure mechanisms which are thermally activated through the application of extreme temperatures. typical test conditions : t a = 70 c to 200 c, no bias, t = 24 to 2500 hours common failure modes : parametric shifts in leakage common failure mechanisms : bulk die and diffusion defects military reference: mil-std-750, method 1032 intermittent operating life (iol) the purpose of this test is the same as ssol in addition to checking the integrity of both wire and die bonds by means of thermal stressing. typical test conditions: t a = 25 c, pd = data book maximum rating, t on = t off = d of 50 c to 100 c, t = 42 to 30000 cycles common failure modes : parametric shifts and catastrophic common failure mechanisms: foreign material, crack and bulk die defects, metallization, wire and die bond defects military reference : mil-std-750, method 1037 mechanical shock this test is used to determine the ability of the device to withstand a sudden change in mechanical stress due to abrupt changes in motion as seen in handling, transportation, or actual use. typical test conditions : acceleration = 1500 g's, orientation = x 1 , y 1 , y 2 plane, t = 0.5 msec, blows = 5 common failure modes: open, short, excessive leakage, mechanical failure common failure mechanisms : die and wire bonds, cracked die, package defects military reference : mil-std-750, method 2015 moisture resistance the purpose of this test is to evaluate the moisture resistance of components under temperature/humidity conditions typical of tropical environments. typical test conditions : t a = 10 c to 65 c, rh = 80% to 98%, t = 24 hours/cycle, cycle = 10 common failure modes : parametric shifts in leakage and mechanical failure common failure mechanisms : corrosion or contaminants on or within the package materials. poor package sealing military reference: mil-std-750, method 1021
http://onsemi.com 337 solderability the purpose of this test is to measure the ability of device leads/terminals to be soldered after an extended period of storage (shelf life). typical test conditions : steam aging = 8 hours, flux = r, solder = sn60, sn63 common failure modes: pin holes, dewetting, non-wetting common failure mechanisms: poor plating, contaminated leads military reference: mil-std-750, method 2026 solder heat this test is used to measure the ability of a device to withstand the temperatures as may be seen in wave soldering operations. electrical testing is the endpoint criterion for this stress. typical test conditions: solder temperature = 260 c, t = 10 seconds common failure modes : parameter shifts, mechanical failure common failure mechanisms : poor package design military reference: mil-std-750, method 2031 steady state operating life (ssol) the purpose of this test is to evaluate the bulk stability of the die and to generate defects resulting from manufacturing aberrations that are manifested as time and stress-dependent failures. typical test conditions: t a = 25 c, p d = data book maximum rating, t = 16 to 1000 hours common failure modes : parametric shifts and catastrophic common failure mechanisms : foreign material, crack die, bulk die, metallization, wire and die bond defects military reference: mil-std-750, method 1026 temperature cycling (air to air) the purpose of this test is to evaluate the ability of the device to withstand both exposure to extreme temperatures and transitions between temperature extremes. this testing will also expose excessive thermal mismatch between materials. typical test conditions : t a = 65 c to 200 c, cycle = 10 to 1000 common failure modes: parametric shifts and catastrophic common failure mechanisms: wire bond, cracked or lifted die and package failure military reference: mil-std-750, method 1051 thermal shock (liquid to liquid) the purpose of this test is to evaluate the ability of the device to withstand both exposure to extreme temperatures and sudden transitions between temperature extremes. this testing will also expose excessive thermal mismatch between materials. typical test conditions: t a = 0 c to 100 c, cycles = 10 to 1000 common failure modes: parametric shifts and catastrophic common failure mechanisms : wire bond, cracked or lifted die and package failure military reference: mil-std-750, method 1056 variable frequency vibration this test is used to examine the ability of the device to withstand deterioration due to mechanical resonance. typical test conditions : peak acceleration = 20 g's, frequency range = 20 hz to 20 khz, t = 48 minutes. common failure modes : open, short, excessive leakage, mechanical failure common failure mechanisms : die and wire bonds, cracked die, package defects military reference : mil-std-750, method 2056
http://onsemi.com 338 zener diode characteristics introduction at first glance the zener diode is a simple device consisting of one p-n junction with controlled breakdown voltage properties. however, when considerations are given to the variations of temperature coefficient, zener impedance, thermal time response, and capacitance, all of which are a function of the breakdown voltage (from 1.8 to 400 v), a much more complicated picture arises. in addition to the voltage spectrum, a variety of power packages are on the market with a variation of dice area inside the encapsulation. this chapter is devoted to sorting out the important considerations in a atypicalo fashion. for exact details, the data sheets must be consulted. however, much of the information contained herein is supplemental to the data sheet curves and will broaden your understanding of zener diode behavior. specifically, the following main subjects will be detailed: basic dc volt-ampere characteristics impedance versus voltage and current temperature coefficient versus voltage and current power derating mounting thermal time response effective thermal impedance surge capabilities frequency response capacitance and switching effects basic zener diode dc volt-ampere characteristics reverse and forward volt-ampere curves are represented in figure 1 for a typical zener diode. the three areas forward, leakage, and breakdown will each be examined. forward dc characteristics the forward characteristics of a zener diode are essentially identical with an aordinaryo rectifier and is shown in figure 2. the volt-ampere curve follows the basic diode equation of i f = i r e qv/kt where kt/q equals about 0.026 volts at room temperature and i r (reverse leakage current) is dependent upon the doping levels of the p-n junction as well as the area. the actual plot of v f versus i f deviates from the theoretical due to slightly afixedo series resistance of the lead wire, bonding contacts and some bulk effects in the silicon. figure 1. typical zener diode dc v-i characteristics (not to scale) forward voltage reverse voltage breakdown region leakage region forward characteristic forward current reverse current while the common form of the diode equation suggests that i r is constant, in fact i r is itself strongly temperature dependent. the rapid increase in i r with increasing temperature dominates the decrease contributed by the exponential term in the diode equation. as a result, the forward current increases with increasing temperature. figure 2 shows a forward characteristic temperature dependence for a typical zener. these curves indicate that for a constant current, an increase in temperature causes a decrease in forward voltage. the voltage temperature coefficient values are typically in the range of 1.4 to 2 mv/ c. figure 2. typical forward characteristics of zener diodes 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 1000 v f , forward voltage (volts) 500 200 100 50 20 10 5 2 1 i , forward current (ma) f t j = 150 c 100 c 25 c -55 c
http://onsemi.com 339 leakage dc characteristics when reverse voltage less than the breakdown is applied to a zener diode, the behavior of current is similar to any back-biased silicon p-n junction. ideally, the reverse current would reach a level at about one volt reverse voltage and remain constant until breakdown is reached. there are both theoretical and practical reasons why the typical v-i curve will have a definite slope to it as seen in figure 3. multiplication effects and charge generation sites are present in a zener diode which dictate that reverse current (even at low voltages) will increase with voltage. in addition, surface charges are ever present across p-n junctions which appear to be resistive in nature. the leakage currents are generally less than one microampere at 150 c except with some large area devices. quite often a leakage specification at 80% or so of breakdown voltage is used to assure low reverse currents. figure 3. typical leakage current versus voltage 20 16 12 6 4 0 0.1 1 10 100 1000 10000 i , reverse leakage current (na) r v r , reverse voltage (volts) t j = 150 c 25 c -55 c voltage breakdown at some definite reverse voltage, depending on the doping levels (resistivity) of the p-n junction, the current will begin to avalanche. this is the so-called azenero or abreakdowno area and is where the device is usually biased during use. a typical family of breakdown curves showing the effect of temperature is illustrated in figure 4. between the minimum currents shown in figure 4 and the leakage currents, there is the akneeo region. the avalanche mechanism may not occur simultaneously across the entire area of the p-n junction, but first at one microscopic site, then at an increasing number of sites as further voltage is applied. this action can be accounted for by the amicroplasma dischargeo theory and correlates with several breakdown characteristics. figure 4. typical zener characteristic variation with temperature 32 31 30 29 28 27 26 25 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 v z , zener voltage (volts) i , zener current (ma) z t = -55 c 100 c 25 c 150 c t = t j t = t a an exaggerated view of the knee region is shown in figure 5. as can be seen, the breakdown or avalanche current does not increase suddenly, but consists of a series of smoothly rising current versus voltage increments each with a sudden break point. figure 5. exaggerated v-i characteristics of the knee region exaggerated vi of knee region zener voltage voltage zener current current at the lowest point, the zener resistance (slope of the curve) would test high, but as current continues to climb, the resistance decreases. it is as though each discharge site has high resistance with each succeeding site being in parallel until the total resistance is very small. in addition to the resistive effects, the micro plasmas may act as noise generators. the exact process of manufacturing affects how high the noise will be, but in any event there will be some noise at the knee, and it will diminish considerably as current is allowed to increase. since the zener impedance and the temperature coefficient are of prime importance when using the zener diode as a reference device, the next two sections will expand on these points.
http://onsemi.com 340 zener impedance the slope of the v z i z curve (in breakdown) is defined as zener impedance or resistance. the measurement is generally done with a 60 hz (on modern, computerized equipment this test is being done at 1 khz) current variation whose value is 10% in rms of the dc value of the current. (that is, d i z peak to peak = 0.282 i z .) this is really not a small signal measurement but is convenient to use and gives repeatable results. the zener impedance always decreases as current increases, although at very high currents (usually beyond i z max) the impedance will approach a constant. in contrast, the zener impedance decreases very rapidly with increasing current in the knee region. on semiconductor specifies most zener diode impedances at two points: i zt and i zk . the term i zt usually is at the quarter power point, and i zk is an arbitrary low value in the knee region. between these two points a plot of impedance versus current on a log-log scale is close to a straight line. figure 6 shows a typical plot of z z versus i z for a 20 volt500 mw zener. the worst case impedance between i zt and i zk could be approximated by assuming a straight line function on a log-log plot; however, at currents above i zt or below i zk a projection of this line may give erroneous values. figure 6. zener impedance versus zener current zener current (ma) 100 10 1 0.1 1 10 100 1000 zener impedance (ohms) approximate maximum line z zt(max) z zk(max) the impedance variation with voltage is much more complex. first of all, zeners below 6 volts or so exhibit afield emissiono breakdown converting to aavalancheo at higher currents. the two breakdowns behave somewhat dif ferently with afield emissiono associated with high impedance and negative temperature coefficients and aavalancheo with lower impedance and positive temperature coefficients. a v-i plot of several low voltage 500 mw zener diodes is shown in figure 7. it is seen that at some given current (higher for the lower voltage types) there is a fairly sudden decrease in the slope of d v/ d i. apparently, this current is the transition from one type of breakdown to the other. above 6 volts the curves would show a gradual decrease of d v/ d i rather than an abrupt change, as current is increased. figure 7. zener current versus zener voltage (low voltage region) 1 100 10 1 0.1 0.01 234 567 8 zener voltage (volts) zener current (ma) possibly the plots shown in figure 8 of zener impedance versus voltage at several constant i z 's more clearly points out this effect. it is obvious that zener diodes whose breakdowns are about 7 volts will have remarkably low impedance. 200 100 70 50 30 20 10 7 5 3 2 1 ma 10 ma 20 ma figure 8. dynamic zener impedance (typical) versus zener voltage 2 3 5 7 10 20 30 50 70 100 200 z , dynamic impedance (ohms) z v z , zener voltage (volts) t a = 25 c i z(ac) = 0.1 i z(dc) however, this is not the whole picture. a zener diode figure of merit as a regulator could be z z /v z . this would give some idea of what percentage change of voltage could be expected for some given change in current. of course, a low z z /v z is desirable. generally zener current must be decreased as voltage is increased to prevent excessive power dissipation; hence zener impedance will rise even higher and the afigure of merito will become higher as voltage increases. this is the case with i zt taken as the test point. however, if i zk is used as a comparison level in those devices which keep a constant i zk over a large range of voltage, the afigure of merito will exhibit a bowl-shaped curve first decreasing and then increasing as voltage is increased. typical plots are shown in figure 9. the conclusion can be reached that for uses where wide swings of current may occur and the quiescent bias current must be high, the lower voltage zener will provide best regulation,
http://onsemi.com 341 but for low power applications, the best performance could be obtained between 50 and 100 volts. 70 30 10 50 90 110 130 150 0.85 ma 17 ma 250 ma 10 w, z zt(max) 1.7 ma see note below 1.3 ma 12.5 ma 3.8 ma 28 ma 75 ma zener voltage (volts) zener impedance (max)/zener voltage 10 100 1 0.1 (note: curve is approximate, actual z z(max) is rounded off to nearest whole number on a data sheet) figure 9. figure of merit: z z(max) /v z versus v z (400 mw & 10 w zeners) 400 mw, z zk(max) at 0.25 ma 10 w, z zk(max) at 1 ma 400 mw, z zt(max) temperature coefficient below three volts and above eight volts the zener voltage change due to temperature is nearly a straight line function and is almost independent of current (disregarding self-heating effects). however, between three and eight volts the temperature coefficients are not a simple affair. a typical plot of t c versus v z is shown in figure 10. 23 45 67 89 11 0.01 ma 0.1 ma 30 ma 1 ma 10 ma figure 10. temperature coefficient versus zener voltage at 25 c conditions typical 7 6 5 4 3 2 1 0 -1 -2 -3 v z , zener voltage (volts) 10 12 t , temperature coefficients (mv/c) c v z reference at i z = i zt & t a = 25 c any attempt to predict voltage changes as temperature changes would be very difficult on a atypicalo basis. (this, of course, is true to a lesser degree below three volts and above eight volts since the curve shown is a typical one and slight deviations will exist with a particular zener diode.) for example, a zener which is 5 volts at 25 c could be from 4.9 to 5.05 volts at 75 c depending on the current level. whereas, a zener which is 9 volts at 25 c would be close to 9.3 volts at 75 c for all useful current levels (disregarding impedance effects). as was mentioned, the situation is further complicated by the normal deviation of t c at a given current. for example, for 7.5 ma the normal spread of t c (expressed in %/ c) is shown in figure 11. this is based on limited samples and in no manner implies that all on semiconductor zeners between 2 and 12 volts will exhibit this behavior. at other current levels similar deviations would occur. +0.08 +0.06 +0.04 +0.02 0 -0.02 -0.08 -0.10 -0.04 -0.06 02 4 68101214 zener voltage (volts) typical max figure 11. temperature coefficient spread versus zener voltage temperature coefficient (%/c) max min min typical i zt = 7.5 ma obviously, all of these factors make it very difficult to attempt any calculation of precise voltage shift due to temperature. except in devices with specified maximum t.c., no aworse caseo design is possible. information concerning the on semiconductor temperature compensated or reference diodes is given in chapter 4. typical temperature characteristics for a broad range of voltages is illustrated in figure 12. this graphically shows the significant change in voltage for high voltage devices (about a 20 volt increase for a 100 c increase on a 200 volt device). note: dv is + above 5 volts - below 4.3 volts between 4.3 & 5 volts varies about + 0.08 volts zener voltage (volts) 1 2 3 5 10 50 100 200 1,000 100 10 1 0.1 figure 12. typical temperature characteristics v (+25 c to +125 c) d z 0.01
http://onsemi.com 342 power derating and mounting the zener diode like any other semiconductor has a maximum junction temperature. this limit is somewhat arbitrary and is set from a reliability viewpoint. most semiconductors exhibit an increasing failure rate as temperature increases. at some temperature, the solder will melt or soften and the failure rate soars. the 175 c to 200 c junction temperature rating is quite safe from solder failures and still has a very low failure rate. in order that power dissipated in the device will never cause the junction to rise beyond 175 c or 200 c (depending on the device), the relation between temperature rise and power must be known. of course, the thermal resistance (r q ja or r q jl ) is the factor which relates power and temperature in the well known athermal ohm's law'' relation: d t = t j t a = r q ja p z (1) and d t = t j t l = r q jl p z (2) where t j t a t l r q ja r q jl p z = junction temperature = ambient temperature = lead temperature = thermal resistance junction to ambient = thermal resistance junction to lead = zener power dissipation obviously, if ambient or lead temperature is known and the appropriate thermal resistance for a given device is known, the junction temperature could be precisely calculated by simply measuring the zener dc current and voltage (p z = i z v z ). this would be helpful to calculate voltage change versus temperature. however, only maximum and typical values of thermal resistance are given for a family of zener diodes. so only aworst caseo or typical information could be obtained as to voltage changes. the relations of equations 1 and 2 are usually expressed as a graphical derating of power versus the appropriate temperature. maximum thermal resistance is used to generate the slope of the curve. an example of a 400 milliwatt device derated to the ambient temperature and a 1 watt device derated to the lead temperature are shown in figures 13 and 14. 500 25 50 75 100 125 150 175 200 400 300 200 100 0 t a , ambient temperature ( c) figure 13. 400 mw power temperature derating curve p , power dissipation (milliwatts) d 1.25 0 20 40 60 80 100 120 140 160 180 200 l = lead length to heat sink 1 0.75 0.50 0.25 l = 1/8 l = 3/8 l = 1 t l , lead temperature ( c) figure 14. power temperature derating curve p , maximum power dissipation (watts) d a lead mounted device can have its power rating increased by shortening the lead length and aheatsinkingo the ends of the leads. this effect is shown in figure 15, for the 1n4728, 1 watt zener diode. each zener has a derating curve on its data sheet and steady state power can be set properly. however, temperature increases due to pulse use are not so easily calculated. the use of atransient thermal resistanceo would be required. the next section expounds upon transient thermal behavior as a function of time and surge power. 175 0 150 125 100 75 50 25 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 l, lead length to heat sink (inch) figure 15. typical 1n4728 thermal resistance versus lead length r jl , junction-to-lead thermal resistance ( c/w) thermal time response early studies of zener diodes indicated that a athermal time constanto existed which allowed calculation of temperature rise as a function of power pulse height, width, and duty cycle. more precise measurements have shown that temperature response as a function of time cannot be represented as a simple time constant. although as shown in the preceding section, the steady state conditions are analogous in every way to an electrical resistance; a simple athermal capacitanceo placed across the resistor is not the true equivalent circuit. probably a series of parallel r-c
http://onsemi.com 343 networks or lumped constants representing a thermal transmission line would be more accurate. fortunately a concept has developed in the industry wherein the exact thermal equivalent circuit need not be found. if one simply accepts the concept of a thermal resistance which varies with time in a predictable manner, the situation becomes very practical. for each family of zener diodes, a aworst caseo transient thermal resistance curve may be generated. the main use of this transient r q jl curve is when the zener is used as a clipper or a protective device. first of all, the power wave shape must be constructed. (note, even though the power-transient thermal resistance indicates reasonable junction temperatures, the device still may fail if the peak current exceeds certain values. apparently a current crowding ef fect occurs which causes the zener to short. this is discussed further in this section.) transient power-temperature effects a typical transient thermal resistance curve is shown in figure 16. this is for a lead mounted device and shows the effect of lead length to an essentially infinite heatsink. to calculate the temperature rise, the power surge wave shape must be approximated by its rectangular equivalent as shown in figure 17. in case of an essentially non-recurrent pulse, there would be just one pulse, and d t = r q t1 p p . in the general case, it can be shown that where d r q t1 r q t r q t1 + t r q ja (ss) or r q jl (ss) = steady state value of thermal r q ja (ss) or r q jl (ss) = resistance = duty cycle in percent = transient thermal resistance at the time equal to the pulse width = transient thermal resistance at the time equal to pulse interval = transient thermal resistance at the time equal to the pulse interval = plus one more pulse width. d t = [dr q ja (ss) + (1 d) r q t1 + t + r q t1 r q t ] p p pw, pulse width (ms) 100 3 5 10 20 50 100 200 500 1000 2000 5000 10k 30k 70 50 30 20 10 7 5 3 2 1 l = 1/32 l = 1 for q jl(t) values at pulse widths less than 3.0 ms, the above curve can be extrapolated down to 10 m s at a continuing slope of 1/2 figure 16. typical transient thermal resistance (for axial lead zener) l l heat sink thermal resistance ( c/w) r jl(t) , junctiontolead transient q figure 17. relation of junction temperature to power pulses t t 1 t 1 t peak temperature rise average temperature rise ambient temperature peak power (pp) average power = p p this method will predict the temperature rise at the end of the power pulse after the chain of pulses has reached equilibrium. in other words, the average power will have caused an average temperature rise which has stabilized, but a temperature arippleo is present. example: (use curve in figure 16) p p = 5 watt (lead length 1/32 ) d = 0.1 t 1 = 10 ms t = 100 ms r q ja (ss) = 12 c/w (for 1/32 lead length) then r q t1 = 1.8 c/w r q t = 5.8 c/w r q t1 + t = 6 c/w and d t = [0.1 x 12 + (1 0.1) 6 + 1.8 5.8] 5 d t = 13 c or at t a = 25 , t j = 38 c peak surge failures if no other considerations were present, it would be a simple matter to specify a maximum junction temperature no matter what pulses are present. however, as has been noted, apparently other fault conditions prevail. the same group of devices for which the transient thermal curves were generated were tested by subjecting them to single shot power pulses. a failure was defined as a significant shift of leakage or zener voltage, or of course opens or shorts. each device was measured before and after the applied pulse. most failures were shifts in zener voltage. the results are shown in figure 18. attempts to correlate this to the transient thermal resistance work quite well on a typical basis. for example, assuming a value for 1 ms of 90 watts and 35 watts at 10 ms, the predicted temperature rise would be 180 c and 190 c. but on a worst case basis, the temperature rises would be about one half these values or junction temperatures, on the order of 85 c to 105 c, which are obviously low. apparently at very high power levels a current restriction occurs causing hot spots. there was no apparent correlation
http://onsemi.com 344 of zener voltage or current on the failure points since each group of failures contained a mixture of voltages. 1000 0.00001 0.0001 0.001 0.01 0.1 1 worse case 100 10 1 power (watts) figure 18. one shot power failure axial lead zener diode time of pulse (seconds) typical voltage versus time quite often the junction temperature is only of academic interest, and the designer is more concerned with the voltage behavior versus time. by using the transient thermal resistance, the power, and the temperature coefficient, the designer could generate v z versus time curves. the on semiconductor zener diode test group has observed device voltages versus time until the thermal equilibrium was reached. a typical curve is shown for a lead mounted low wattage device in figure 19 where the ambient temperature was maintained constant. it is seen that voltage stabilizes in about 100 seconds for 1 inch leads. since information contained in this section may not be found on data sheets it is necessary for the designer to contact the factory when using a zener diode as a surge suppressor. additional information on transient suppression application is presented elsewhere in this book. 166 0.01 165 164 163 162 161 160 0.1 1 10 100 time (seconds) zener voltage (volts) figure 19. zener voltage (typical) versus time for step power pulses (500 mw lead mounted devices) frequency and pulse characteristics the zener diode may be used in applications which require a knowledge of the frequency response of the device. of main concern are the zener resistance (usually specified as aimpedanceo) and the junction capacitance. the capacitance curves shown in this section are typical. zener capacitance since zener diodes are basically pn junctions operated in the reverse direction, they display a capacitance that decreases with increasing reverse voltage. this is so because the effective width of the pn junction is increased by the removal of charges (holes and electrons) as reverse voltage is increased. this decrease in capacitance continues until the zener breakdown region is entered; very little further capacitance change takes place, owing to the now fixed voltage across the junction. the value of this capacitance is a function of the material resistivity, r , (amount of doping which determines v z nominal), the diameter, d, of junction or dice size (determines amount of power dissipation), the voltage across the junction v c , and some constant, k. this relationship can be expressed as: kd4 p v c c c = n kd 4 r v c after the junction enters the zener region, capacitance remains relatively fixed and the ac resistance then decreases with increasing zener current. test circuit considerations: a capacitive bridge was used to measure junction capacitance. in this method the zener is used as one leg of a bridge that is balanced for both dc at a given reverse voltage and for ac (the test frequency 1 mhz). after balancing, the variable capacitor used for balancing is removed and its value measured on a test instrument. the value thus indicated is the zener capacitance at reverse voltage for which bridge balance was obtained. figure 20 shows capacitance test circuit. figure 21 is a plot of junction capacitance for diffused zener diode units versus their nominal operating voltage. capacitance is the value obtained with reverse bias set at one-half the nominal v z . the plot of the voltage range from 6.8 v to 200 v, for three dice sizes, covers most on semiconductor diffused-junction zeners. consult specific data sheets for capacitance values. figures 22, 23, and 24 show plots of capacitance versus reverse voltage for units of various voltage ratings in each of the three dice sizes. junction capacitance decreases as reverse voltage increases to the zener region. this change in capacitance can be expressed as a ratio which follows a one-third law, and c 1 /c 2 = (v 2 /v 1 ) 1/3 . this law holds only from the zener voltage down to about 1 volt, where the curve begins to flatten out. figure 25 shows this for a group of low wattage units.
http://onsemi.com 345 figure 20. capacitance test circuit c1 c2 v dc 1 k 1% 1 k 1% 1 k 1% 1 k 1% dc power supply hp no. 712a 100 w iv v ac 1 mhz signal gen tek no. 190a 10/50 pf x zener under test higain diff scope null ind tek type d r = z r r cap decade 0-.09 mf 100 pf steps d c 1% bal read s 1 10/150 pf l/c meter tek 140 0.1 m f 1,000 1 10 100 v r , reverse voltage (volts) 100 10 c , capacitance (picofarads) z 100 volts 50 volts 20 volts 10 volts 10,000 1 10 100 1,000 1,000 100 10 c , capacitance (picofarads) @ v z/ 2 v z , nominal unit voltage (volts) z high wattage low wattage medium wattage figure 21. capacitance versus voltage figure 22. capacitance versus reverse voltage low wattage units avg. for 10 units each 10,000 110 v r , reverse voltage (volts) 100 c , capacitance (picofarads) z 100 1,000 10,000 1 10 1,000 v r , reverse voltage (volts) 100 10 c , capacitance (picofarads) z 100 1,000 figure 23. capacitance versus reverse voltage figure 24. capacitance versus reverse voltage 100 volts 50 volts 20 volts 10 volts 100 volts 50 volts 20 volts 10 volts medium wattage units avg. for 10 units each high wattage units avg. for 10 units each
http://onsemi.com 346 c , capacitance (picofarads) z 100 1,000 10 110 v r , reverse voltage (volts) 100 0.1 low wattage units figure 25. flattening of capacitance curve at low voltages 100 volts 50 volts 10 volts figure 26. impedance test circuit 1 k 1 k r 2 1 w r x = z z dc supply hp 712a ma dc e 1 e 2 r x = e 1 - e 2 e 2 0.1 m f 600 read s 1 a read set set 10m 100 pf s 1 b signal gen hp 650a ac vtvm hp 400h dc vtvm hp 412a zener impedance zener impedance appears primarily as composed of a current-dependent resistance shunted by a voltage-dependent capacitor. figure 26 shows the test circuit used to gather impedance data. this is a voltage-impedance ratio method of determining the unknown zener impedance. the operation is as follows: (1) adjust for desired zener i zdc by observing ir drop across the 1-ohm current-viewing resistor r 2 . (2) adjust i zac to 100 m a by observing ac ir drop across r2. (3) measure the voltage across the entire network by switching s1. the ratio of these two ac voltages is then a measure of the impedance ratio. this can be expressed simply as r x = [(e 1 e 2 )/e 2 ] r 2 . section a of s 1 provides a dummy load consisting of a 10-m resistor and a 100 pf capacitor. this network is required to simulate the input impedance of the ac vtvm while it is being used to measure the ac ir drop across r 2 . this method has been found accurate up to about three megahertz; above this frequency, lead inductances and strap capacitance become the dominant factors.
http://onsemi.com 347 figure 27 shows typical impedance versus frequency relationships of 6.8 volt 500 mw zener diodes at various dc zener currents. before the zener breakdown region is entered, the impedance is almost all reactive, being provided by a voltage-dependent capacitor shunted by a very high resistance. when the zener breakdown region is entered, the capacitance is fixed and now is shunted by current-dependent resistance. for comparison, figure 27 also shows the plot for a 680 pf capacitor x c , a 1k 1% nonreactive resistor, r, and the parallel combination of these two passive elements, z t . z t i z ma 2 10 20 1k & 680 pf r, 1k 1% dc 10,000 10 100 1 khz 10 khz 100 khz 1 mhz 10 mh z frequency (hz) 1,000 100 10 1 z , zener impedan c e (o hm s) z x , 680 pf c figure 27. zener impedance versus frequency 1.00 2.50 5 0.25 0.50 high frequency and switching considerations at frequencies about 100 khz or so and switching speeds above 10 microseconds, shunt capacitance of zener diodes begins to seriously effect their usefulness. the upper photo of figure 28 shows the output waveform of a symmetrical peak limiter using two zener diodes back-to-back. the capacitive ef fects are obvious here. in any application where the signal is recurrent, the shunt capacitance limitations can be overcome, as lower photo of figure 28 shows. this is done by operating fast diodes in series with the zener. upon application of a signal, the fast diode conducts in the forward direction charging the shunt zener capacitance to the level where the zener conducts and limits the peak. when the signal swings the opposite direction, the fast diode becomes back-biased and prevents fast discharge of shunt capacitance. the fast diode remains back-biased when the signal reverses again to the forward direction and remains off until the input signal rises and exceeds the charge level of the capacitor. when the signal exceeds this level, the fast diode conducts as does the zener. thus, between successive cycles or pulses the charge in the shunt capacitor holds off the fast diode, preventing capacitive loading of the signal until zener breakdown is reached. figures 29 and 30 show this method applied to fast-pulse peak limiting. 5 v/cm 0.5 m s/cm 0.5 m s/cm 5 v/cm figure 28. symmetrical peak limiter r s r s e i e o e i e o
http://onsemi.com 348 2 v/cm 20 ns/cm e i e o 2 v/cm e o e i 20 ns/cm figure 29. shunt clipper figure 30. shunt clipper with clamping network 200 w 50 w e i e o 10 v z 200 w 50 w e i 0.001 e o
http://onsemi.com 349 figure 31 is a photo of input-output pulse waveforms using a zener alone as a series peak clipper. the smaller output waveform shows the capacitive spike on the leading edge. figure 32 clearly points out the advantage of the clamping network. 2 v/cm 20 ns/cm e o e i 2 v/cm e o e i 20 ns/cm 0 figure 31. basic series clipper figure 32. series clipper with clamping network 10 vz 50 w 50 w e i e o e i e o 200 w 10 vz 200 w .001
http://onsemi.com 350 temperature compensated zeners introduction a device which provides reference voltages in a special manner is a reference diode. as was discussed in the preceding chapters, the zener diode has the unique characteristic of exhibiting either a positive or a negative temperature coefficient, or both. by properly employing this phenomenon in conjunction with other semiconductor devices, it is possible to manufacture a zener reference element exhibiting a very low temperature coefficient when properly used. this type of low temperature coefficient device is referred to as a reference diode. introduction to reference diodes the temperature characteristics of the zener diode are discussed in a previous chapter, where it was shown that change in zener voltage with temperature can be significant under severe ambient temperature changes (for example, a 100 v zener can change 12.5 volts from 0 to 125 c). the reference diode (often called the temperature compensated zener or the tc zener) is specially designed to minimize these specific temperature effects. design of temperature compensated zeners make possible devices with voltage changes as low as 5 mv from 55 to +100 c, consequently, the advantages of the temperature compensated zener are obvious. in critical applications, as a voltage reference in precision dc power supplies, in high stability oscillators, in digital voltmeters, in frequency meters, in analog-to-digital converters, or in other precision equipment, the temperature compensated zener is a necessity. conceivably temperature compensated devices can be designed for any voltage but present devices with optimum voltage temperature characteristics are limited to specific voltages. each family of temperature compensated zeners is designed by careful selection of its integral parts with special attention to the use conditions (temperature range and current). a distinct operating current is associated with each device. consequently, changes from the specified operating current can only degrade the voltage-temperature relationships. this will be discussed in more detail later. the device adrifto or voltage-time stability is critical in some reference applications. typically zeners and tc zeners offer stability of better than 500 parts per million per 1000 hours. temperature characteristics of the p-n junction and compensation the voltage of a forward biased p-n junction, at a specific current, will decrease with increasing temperature. thus, a device so biased displays a negative temperature coef ficient (figure 1). a p-n junction in avalanche (above 5 volts breakdown) will display a positive temperature coefficient; that is, voltage will increase as temperature increases. due to energy levels of a junction which breaks down below 5 volts, the temperature coefficient is negative. it follows that various combinations of forward biased junctions and reverse biased junctions may be arranged to achieve temperature compensation. from figure 2 it can be seen that if the absolute value of voltage change ( d v) is the same for both the forward biased diode and the zener diode where the temperature has gone from 25 c to 100 c, then the total voltage across the combination will be the same at both temperatures since one d v is negative and the other positive. furthermore, if the rate of increase (or decrease) is the same throughout the temperature change, voltage will remain constant. the non-linearity associated with the voltage temperature characteristics is a result of this rate of change not being a perfect match. v ref = v z + d v z + v d d v d the methods of temperature compensation the effect of temperature is shown in figure 1. the forward characteristic does not vary significantly with reverse voltage breakdown (zener voltage) rating. a change in ambient temperature from 25 to 100 c produces a shift in the forward curve in the direction of lower voltage (a negative temperature coefficient e in this case about 150 mv change), while the same temperature change produces approximately 1.9 v increase in the zener voltage (a positive coefficient). by combining one or more silicon diodes biased in the forward direction with the p-n biased zener diode as shown in figure 3, it is possible to compensate almost completely for the zener temperature coefficient. obviously, with the example shown, 13 junctions would be needed. usually reference diodes are low voltage devices, using zeners with 6 to 8 volts breakdown and one or two forward diodes.
http://onsemi.com 351 figure 1. effects of temperature on zener diode characteristics forward characteristic typical (all types) v z (volts) v f (volts) 30 20 10 15 30 45 i (ma) z 0.5 1 1.5 450 300 150 1.9 v 100 c 25 c 100 c 150 mv 25 c i (ma) f figure 2. principle of temperature compensation figure 3. zener temperature compensation with silicon forward junctions direction of current flow package outline forwardbiased pn junction reversebiased zener junction + 7.5 ma 100 c 25 c +v - d v + d v+ d v 100 c25 c -v 100 c25 c 100 c 25 c 7.5 ma - - - silicon junction diodes zener diodes + -
http://onsemi.com 352 in ac regulator and clipper circuits where zener diodes are normally connected cathode to cathode, the forward biased diode during each half cycle can be chosen with the correct forward temperature coefficient (by stacking, etc.) to correctly compensate for the temperature coefficient of the reverse-biased zener diode. it is possible to compensate for voltage drift with temperature using this method to the extent that zener voltage stabilities on the order of 0.001%/ c are quite feasible. this technique is sometimes employed where higher wattage devices are required or where the zener is compensated by the emitter base junction of a transistor stage. consider the example of using discrete components, 1n4001 rectifier and on semiconductor 5 watt zener, to obtain compensated voltage-temperature characteristics. examination of the curve in figure 4 indicates that a 10 volt zener diode exhibits a temperature coefficient of approximately +5.5 mv/ c. at a current level of 100 ma a temperature coefficient of approximately 2.0 mv/ c is characteristic of the 1n4001 rectifiers. a series connection of three silicon 1n4001 rectifiers produces a total temperature coefficient of approximately 6 mv/ c and a total forward drop of approximately 2.17 volts at 25 c. the combination of three silicon rectifiers and the 10 volt zener diode produces a device with a coefficient of approximately 0.5 mv/ c and a total breakdown voltage at 100 ma of approximately 12.2 volts. calculation shows this to be a temperature stability of 0.004%/ c. 0.5 mv c 12.2 v
100 the temperature compensated zener employs the technique of specially selected dice. this provides optimum voltage temperature characteristics by close control of dice resistivities. 6 5 4 3 2 1 0 -1 -2 -3 0 1 2 3 4 5 6 7 8 9 10 11 12 13 zener voltage (10 ma at 25 c) 7 alloydiffused junction three forwards one forward two forwards diffused junction volts figure 4. mv/ c temperature coefficient stability figure 5 shows the voltage-temperature characteristics of the tc diode. it can be seen that the voltage drops slightly with increasing temperature. voltage (volts) mv change from 25 c voltage 6.326 6.324 6.322 6.320 6.318 6.316 6.314 temperature ( c) -55 -10 25 62 100 figure 5. voltage versus temperature, typical for on semiconductor 1n827 temperature compensated zener diode 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 -6 this non-linearity of the voltage temperature characteristic leads to a definition of a representative design parameter d v z . for each device type there is a specified maximum change allowable. the voltage temperature stability measurement consists of voltage measurement at specified temperatures (for the 1n821 series the temperatures are 55, 0, +25, +75, and +100 c). the voltage readings at each of the temperatures is compared with readings at the other temperatures and the largest voltage change between any of the specified temperatures determines the exact device type. for devices registered prior to complete definition of the voltage temperature stability measurement, the allowable maximum voltage change over the temperature range is derived from the calculation converting %/ c to mv over the temperature range. under this standard definition, %/ c is merely a nomenclature and the meaningful allowable voltage deviation to be expected becomes the designed parameter.
http://onsemi.com 353 current thus far, temperature compensated zeners have been discussed mainly with regard to temperature and voltage. however, the underlying assumption throughout the previous discussion was that current remained constant. there is a significant change in the temperature coefficient of a unit depending on how much above or below the test current the device is operated. a particular unit with a 0.01%/ c temperature coefficient at 7.5 ma over a temperature range of 55 c to +100 c could possibly have a 0.0005%/ c temperature coefficient at 11 ma. in fact, there is a particular current which can be determined for each individual unit that will give the lowest tc. manufacturing processes are designed so that the yields of low tc units are high at the test specification for current. a unit with a high tc at the test current can have a low tc at some other current. a look at the volt-ampere curves at different temperatures illustrates this point clearly (see figure 6). voltage (volts) -6.6 -6.5 -6.4 -6.3 -6.2 -6.1 -6 -5.9 i b i a i c current 25 c -55 +100 d v b b a c d v c figure 6. voltage-ampere curves showing crossover at a if the three curves intersect at a, then operation at i a results in the least amount of voltage deviation due to temperature from the +25 c voltage. at i b and i c there are greater excursions ( d v b and d v c ) from the +25 c voltage as temperature increases or decreases. the effects of poor current regulation if current shifts (randomly or as a function of temperature), then an area of operation can be defined for the temperature compensated zener. once again the curves are drawn, this time a shaded area is shown on the graph. the upper and lower extremities denote the maximum current values generated by the current supply while the voltage extremes at each current are shown by the left and right sides of the area, shown in figure 7. voltage (volts) -6.6 -6.5 -6.4 -6.3 -6.2 -6.1 -6 -5.9 current 25 c -55 +100 d imax d v max figure 7. effects of poorly regulated current the three volt-ampere curves do not usually cross over at exactly the same point. however, this does not take away from the argument that current regulation is probably the most critical consideration when using temperature-compensated units. zener impedance and current regulation zener impedance is defined as the slope of the v-i curve at the test point corresponding to the test current. it is measured by superimposing a small ac current on the dc test current and then measuring the resulting ac voltage. this procedure is identical with that used for regular zeners. impedance changes with temperature, but the variation is usually small and it can be assumed that the amount of current regulation needed at +25 c will be the same for other temperatures. as an example, one might want to determine the amount of current regulation necessary for the device described below when the maximum deviation in voltage due to current variation is 5 millivolts. v zt = 6.32 v i zt = 7.5 ma z zt = 15 w @ +25 c d v = d i ? vz zt 0.005 = d i ? v15 d i = 0.005 15 = 0.33 ma therefore, the current cannot vary more than 0.33 ma. the amount of current regulation necessary is: 0.33 7.5 x 100% = 4.5% regulation. if the device of figure 5 is considered to be the device used in the preceding discussion, it becomes apparent that on the average more voltage variation is due to current fluctuation than is due to temperature variation. therefore, to obtain a truly stable reference source, the device must be driven from a constant current source.
http://onsemi.com 354 basic voltage regulation using zener diodes basic concepts of regulation the purpose of any regulator circuit is to minimize output variations with respect to variations in input, temperature, and load requirements. the most obvious use of a regulator is in the design of a power supply, but any circuit that incorporates regulatory technique to give a controlled output or function can be considered as a regulator. in general, to provide a regulated output voltage, electronic circuitry will be used to pass an output voltage that is significantly lower than the input voltage and block all voltage in excess of the desired output. allocations should also be made in the regulation circuitry to maintain this output voltage for variation in load current demand. there are some basic rules of thumb for the electrical requirements of the electronic circuitry in order for it to provide regulation. number one, the output impedance should be kept as low as possible. number two, a controlling reference needs to be established that is relatively insensitive to the prevailing variables. in order to illustrate the importance of these rules, an analysis of some simple regulator circuits will point out the validity of the statements. the circuit of figure 1 can be considered a regulator. this circuit will serve to illustrate the importance of a low output impedance. the resistors r s and r r can be considered as the source and regulator impedances, respectively. the output of the circuit is: r s r r r l r r r l
(1) v o = v i x r r r l r r + r l r s + r r r l r r +r l = v i r s r l r s r r ++ 1 figure 1. shunt resistance regulator + - r s r r r l + - v i v o for a given incremental change in v i , the changes in v o will be: (2) r r r r l r r
d v o = d v i 1 r s r l r s r r ++ 1 assuming r l fixed at some constant value, it is obvious from equation (2) that in order to minimize changes in v o for variations in v i , the shunt resistor r r should be made as small as possible with respect to the source resistor r s . obviously, the better this relation becomes, the larger v i is going to have to be for the same v o , and not until the ratio of r s to r r reaches infinity will the output be held entirely constant for variation in v i . this, of course, is an impossibility, but it does stress the fact that the regulation improves as the output impedance becomes lower and lower. where the output impedance of figure 1 is given by (3) r o = r s r r r s +r r it is apparent from this relation that as regulation is improving with r s increasing and r r decreasing the output impedance r o is decreasing, and is approximately equal to r r as the ratio is 10 times or greater. the regulation of this circuit can be greatly improved by inserting a reference source of voltage in series with r r such as figure 2. figure 2. regulator with battery reference source + - r s v r r l r r + - v i v o the resistance r r represents the internal impedance of the battery. for this circuit, the output is (4) v o = v r + v i v r s r l r s r r ++ 1 then for incremental changes in the input v i , the changes in v o will be dependent on the second term of equation (4), which again makes the regulation dependent on the ratio of r s to r r . where changes in the output voltage or the regulation of the circuit in figure 1 were directly and solely dependent upon the input voltage and output impedance, the regulation of circuit 2 will have an output that varies about the reference source v r in accordance with the magnitude of battery resistance r r and its fluctuations for changes in v i . theoretically, if a perfect battery were used, that is, v r is constant and r r is zero, the circuit would be a perfect regulator. in other words, in line with the basic rules of thumb the circuit exhibits optimum regulation with an output impedance of zero, and a constant reference source. for regulator application, a zener diode can be used instead of a battery with a number of advantages. a battery's resistance and nominal voltage will change with age and load demand; the on semiconductor zener diode characteristics remain unchanged when operating within its
http://onsemi.com 355 specified limits. any voltage value from a couple of volts to hundreds of volts is available with zener diodes, where conventional batteries are limited in the nominal values available. also, the zener presents a definite size advantage, and is less expensive than a battery because it is permanent and need not be regularly replaced. the basic zener diode shunt regulator circuit is shown in figure 3. figure 3. basic zener diode shunt regulator + - r s r l r z v z zener diode + - v i v o depending upon the operating conditions of the device, a zener diode will exhibit some relatively low zener impedance r z and have a specified breakover voltage of v z that is essentially constant. these inherent characteristics make the zener diode suited for voltage regulator applications. designing the zener shunt regulator for any given application of a zener diode shunt regulator, it will be required to know the input voltage variations and output load requirements. the calculation of component values will be directly dependent upon the circuit requirements. the input may be constant or have maximum and minimum values depending upon the natural regulation or waveform of the supply source. the output voltage will be determined by the designer's choice of v z and the circuit requirements. the actual value of v z will be dependent upon the manufacturer's tolerance and some small variation for different zener currents and operating temperatures. for all practical purposes, the value of v z as specified on the manufacturer's data sheet can be used to approximate v o in computing component values. the requirement for load current will be known and will vary within some given range of i l(min) to i l(max) . the design objective of figure 3 is to determine the proper values of the series resistance, r s , and zener power dissipation, p z . a general solution for these values can be developed as follows, when the following conditions are known: v i (input voltage) from v i(min) to v i(max) v o (output voltage) from v z(min) to v z(max) i l (load current) from i l(min) to i l(max) the value of r s must be of such a value so that the zener current will not drop below a minimum value of i z(min) . this minimum zener current is mandatory to keep the device in the breakover region in order to maintain the zener voltage reference. the minimum current can be either chosen at some point beyond the knee or found on the manufacturer's data sheet (i zk ). the basic voltage loop equation for this circuit is: (5) v i = (i z + i l )r s + v z the minimum zener current will occur when v i is minimum, v z is maximum, and i l is maximum, then solving for r s , we have: (6) v i(min) v z(max) i z(min) + i l(max) r s = having found r s , we can determine the maximum power dissipation p z for the zener diode. p z(max) =v z(max) vi(max) vz(min) rs il(min) (7 ) (8 ) (9 ) p z(max) = i z(max) v z(max) where: i z (max) = v i(max) v z(min) r s i l(min) therefore: v i(max) v z(min) r s i l(min) once the basic regulator components values have been determined, adequate considerations will have to be given to the variation in v o . the changes in v o are a function of four different factors; namely, changes in v i , i l , temperature, and the value of zener impedance, r z . these changes in v o can be expressed as: (10) r s r z r s + r z d v i r s r z r s r l + 1 + d v o = d i l + tc d tv z the value of d v o as calculated with equation (10) will quite probably be slightly different from the actual value when measured empirically. for all practical purposes though, this difference will be insignificant for regulator designs utilizing the conventional commercial line of zener diodes. obviously to precisely predict d v o with a given zener diode, exact information would be needed about the zener impedance and temperature coefficient throughout the variation of zener current. the aworst caseo change can only be approximated by using maximum zener impedance and with typical temperature coefficient. the basic zener shunt regulator can be modified to minimize the effects of each term in the regulation equation (10). taking one term at a time, it is apparent that the regulation or changes in output d v o will be improved if the magnitude of d v i is reduced. a practical and widely used technique to reduce input variation is to cascade zener shunt regulators such as shown in figure 4.
http://onsemi.com 356 figure 4. cascaded zener shunt regulators reduce d v o by reducing d v i to the succeeding stages - + r s2 z 1 r l r s1 - z 2 r l + v i v o v o = v i = v z1 this, in essence, is a regulator driven with a pre-regulator so that the over all regulation is the product of both. the regulation or changes in output voltage is determined by: where: r l = r s2 + r l r z2 r l + r z2 and i l = i l + i z2 (11) r s2 r z2 r s2 + r z2 d v zi r s2 r l + 1+ d v o = d i l + tc 2 d tv z2 r s2 r z2 (12) r s1 r z1 r s1 +r z1 d v i r s1 r l + 1+ d v z1 = d v o = d i l + tc 1 d tv z1 r s1 r z1 the changes in output with respect to changes in input for both stages assuming the temperature and load are constant is (13) d v o d v z1 d v o d v o = = regulation of second stage (14) (15) = regulation of first stage d v o d v i = combined regulation x d v o d v o = d v o d v i d v o d v i obviously, this technique will vastly improve overall regulation where the input fluctuates over a relatively wide range. as an example, let's say the input varies by 20% and the regulation of each individual stage reduces the variation by a factor of 1/20. this then gives an overall output variation of 20% (1/20) 2 or 0.05%. the next two factors in equation (10) affecting regulation are changes in load current and temperature excursions. in order to minimize changes for load current variation, the output impedance r z r s /(r z + r s ) will have to be reduced. this can only be done by having a lower zener impedance because the value of r s is fixed by circuit requirements. there are basically two ways that a lower zener impedance can be achieved. one, a higher wattage device can be used which allows for an increase in zener current of which will reduce the impedance. the other technique is to series lower voltage devices to obtain the desired equivalent voltage, so that the sum of the impedance is less than that for a single high voltage device. so to speak, this technique will kill two birds with one stone, as it can also be used to minimize temperature induced variations of the regulator. in most regulator applications, the single most detrimental factor affecting regulation is that of variation in junction temperature. the junction temperature is a function of both the ambient temperature and that of self heating. in order to illustrate how the overall temperature coefficient is improved with series lower voltage zener, a mathematical relationship can be developed. consider the diagram of figure 5. figure 5. series zener improve dynamic impedance and temperature coefficient + - r s r l z 1 z 2 z n + - v i v o with the temperature coefficient tc defined as the % change per c, the change in output for a given temperature range will equal some overall tc x d t x total v z . such as (16) d v o( d t) = tc d t (v z1 + v z2 + . . . + v zn ) obviously, the change in output will also be equal to the sum of the changes as attributed from each zener. (17) d v o( d t) = d t(tc 1 v z1 + tc 2 v z2 + . . . + tc n v zn ) setting the two equations equal to each other and solving for the overall tc, we get (18) (19) tc d t(v z1 + v z2 + . . . + v zn ) = d t(tc 1 v z1 + tc 2 v z2 + . . . + tc n v zn ) tc = tc 1 v z1 + tc 2 v z2 + . . . + tc n v zn v z1 + v z2 + . . . + v zn for equation (19) the overall temperature coefficient for any combination of series zeners can be calculated. say for instance several identical zeners in series replace a single higher voltage zener. the new overall temperature coefficient will now be that of one of the low voltage devices. this allows the designer to go to the manufacturer's
http://onsemi.com 357 data sheet and select a combination of low tc zener diodes in place of the single higher tc devices. generally speaking, the technique of using multiple devices will also yield a lower dynamic impedance. advantages of this technique are best demonstrated by example. consider a 5 watt diode with a nominal zener voltage of 10 volts exhibits approximately 0.055% change in voltage per degree centrigrade, a 20 volt unit approximately 0.075%/ c, and a 100 volt unit approximately 0.1%/ c. in the case of the 100 volt diode, five 20 volt diodes could be connected together to provide the correct voltage reference, but the overall temperature coefficient would remain that of the low voltage units, i.e. 0.075%/ c. it should also be noted that the same series combination improves the overall zener impedance in addition to the temperature coefficient. a 20 volt, 5 watt on semiconductor zener diode has a maximum zener impedance of 3 ohms, compared to the 90 ohms impedance which is maximum for a 100 volt unit. although these impedances are measured at different current levels, the series impedance of five 20 volt zener diodes is still much lower than that of a single 100 volt zener diode at the test current specified on the data sheet. for the ultimate in zener shunt regulator performance, the aforementioned techniques can be combined with the proper selection of devices to yield an overall improvement in regulation. for instance, a multiple string of low voltage zener diodes can be used as a preregulator, with a series combination of zero tc reference diodes in the final stage such as figure 6. the first stage will reduce the large variation in v i to some relatively low level, i.e. d v z . this d v z is optimized by utilizing a series combination of zeners to reduce the overall tc and d v z . because of this small fluctuation of input to the second stage, and if r l is constant, the biasing current of the tc units can be maintained at their specified level. this will give an output that is very precise and not significantly affected by changes in input voltage or junction temperature. figure 6. series zeners cascaded with series reference diodes for improved zener shunt regulation r s1 r s2 z 1 z 2 z 3 z 4 r l tc 1 tc 2 + - + - v i v o the basic zener shunt regulator exhibits some inherent limitations to the designer. first of all, the zener is limited to its particular power dissipating rating which may be less than the required amount for a particular situation. the total magnitude of dissipation can be increased to some degree by utilizing series or parallel units. zeners in series present few problems because individual voltages are additive and the devices all carry the same current and the extent that this technique can be used is only restricted by the feasibility of circuit parameters and cost. on the other hand, caution must be taken when attempting to parallel zener diodes. if the devices are not closely matched so that they all break over at the same voltage, the low voltage device will go into conduction first and ultimately carry all the current. in order to avoid this situation, the diodes should be matched for equal current sharing. extending power and current range the most common practice for extending the power handling capabilities of a regulator is to incorporate transistors in the design. this technique is discussed in detail in the following sections of this chapter. the second disadvantage to the basic zener shunt regulator is that because the device does not have a gain function, a feedback system is not possible with just the zener resistor combination. for very precise regulators, the design will normally be an electronic circuit consisting of transistor devices for control, probably a closed loop feedback system with a zener device as the basic referencing element. the concept of regulation can be further extended and improved with the addition of transistors as the power absorbing elements to the zener diodes establishing a reference. there are three basic techniques used that combine zener diodes and transistors for voltage regulation. the shunt transistor type shown in figure 7 will extend the power handling capabilities of the basic shunt regulator, and exhibit marked improvement in regulation. figure 7. basic transistor shunt regulator r l r s z i z i c r b i b v be q 1 i l - + - + v i v o in this configuration the source resistance must be large enough to absorb the overvoltage in the same manner as in the conventional zener shunt regulator. most of the shunt regulating current in this circuit will pass through the transistor reducing the current requirements of the zener diode by essentially the dc current gain of the transistor h fe . where the total regulating shunt current is: (20) i s = i z + i c = i z + i b h fe where therefore i z = i b + i rb and i b >> i rb i s i z + i z h fe = i z (1 + h fe )
http://onsemi.com 358 the output voltage is the reference voltage v z plus the forward junction drop from base to emitter v be of the transistor. (21) v o = v z + v be the values of components and their operating condition is dictated by the specific input and output requirements and the characteristics of the designer's chosen devices, as shown in the following relations: (22) r s = v i(min) v o(max) i z(min) [1+h fe(min) ] + i l(max) r b = v i(min) v z(max) i z(min) p dz = i z(max) v z(max) when i z(max) = v i(max) v o(min) r s i l(min) 1 1 h fe(min)
hence v i(max) v o(min) r s i l(min) 1 1 + h fe(min) p dz = v i(max) v o(min) r s i l(min) 1 1 h fe(min)
v i(max) v o(min) r s i l(min) v z(max) 1 + h fe(min) p dq = v i(max) v o(min) r s i l(min) 1888888
v i(max) v o(min) r s i l(min) v o(max) (23) (24) (25) (26) (27) regulation with this circuit is derived in essentially the same manner as in the shunt zener circuit, where the output impedance is low and the output voltage is a function of the reference voltage. the regulation is improved with this configuration because the small signal output impedance is reduced by the gain of q 1 by 1/h fe . one other highly desirable feature of this type of regulator is that the output is somewhat self compensating for temperature changes by the opposing changes in v z and v be for v z 10 volts. with the zener having a positive 2 mv/ c tc and the transistor base to emitter being a negative 2 mv/ c tc, therefore, a change in one is cancelled by the change in the other. even though this circuit is a very effective regulator it is somewhat undesirable from an efficiency standpoint. because the magnitude of r s is required to be large, and it must carry the entire input current, a large percentage of power is lost from input to output. emitter follower regulator another basic technique of transistor-zener regulation is that of the emitter follower type shown in figure 8. figure 8. emitter follower regulator r s r b z 1 i rb i z + - v be - + i l r l q 1 i c + - + - v i v o this circuit has the desirable feature of using a series transistor to absorb overvoltages instead of a large fixed resistor, thereby giving a significant improvement in efficiency over the shunt type regulator. the transistor must be capable of carrying the entire load current and withstanding voltages equal to the input voltage minus the load voltage. this, of course, imposes a much more stringent power handling requirement upon the transistor than was required in the shunt regulator. the output voltage is a function of the zener reference voltage and the base to emitter drop of q 1 as expressed by the equation (28). (28) v o = v z v be the load current is approximately equal to the transistor collector current, such as shown in equation (29). (29) i l(max) i c(max) the designer must select a transistor that will meet the following basic requirements: (30) p d @ (v i(max) v o )i l(max) i c(max) i l(max) bv ces (v i(max) v o ) depending upon the designer's choice of a transistor and the imposed circuit requirements, the operation conditions of the circuit are expressed by the following equations: (31) v z = v o + v be = v o + i l(max) /g fe(min) @ i l(max) r s = v i(min) v z v ce(min) @ i l(max) i l(max) where v ce(min) is an arbitrary value of minimum collector to emitter voltage and g fe is the transconductance. this is sufficient to keep the transistor out of saturation, which is usually about 2 volts.
http://onsemi.com 359 (32) r b = v ce(min) @ i l(max) i l(max) /h fe(min) @ i l(max) + i z(min) i z(max) = v i(max) v z r b + r z p dz = i z(max) v z actual p dq = (v i(max) v o ) i l(max) (33) (34) (35) there are two primary factors that effect the regulation most in a circuit of this type. first of all, the zener current may vary over a considerable range as the input changes from minimum to maximum and this, of course, may have a significant effect on the value of v z and therefore v o . secondly, v z and v be will both be effected by temperature changes which are additive on their effect of output voltage. this can be seen by altering equation (28) to show changes in v o as dependent on temperature, see equation (36). (36) v o( d t) = d t[(+tc) v z (tc) v be ] the effects of these detrimental factors can be minimized by replacing the bleeder resistor r b with a constant current source and the zener with a reference diode in series with a forward biased diode (see figure 9). figure 9. improved emitter follower regulator + - + - r s r l q 1 forward bias diode tc zener i b = k constant current source v i v o the constant current source can be either a current limiter diode or a transistor source. the current limiter diode is ideally suited for applications of this type, because it will supply the same biasing current irregardless of collector to base voltage swing as long as it is within the voltage limits of the device. this technique will overcome changes in v z for changes in i z and temperature, but changes in v be due to load current changes are still directly reflected upon the output. this can be reduced somewhat by combining a transistor with the zener for the shunt control element as illustrated in figure 10. figure 10. series pass regulator + - r l z 1 q 2 q 1 r b r s i c2 constant current source v i v o this is the third basic technique used for transistor-zener regulators. this technique or at least a variation of it, finds the widest use in practical applications. in this circuit the transistor q 1 is still the series control device operating as an emitter follower. the output voltage is now established by the transistor q 2 base to emitter voltage and the zener voltage. because the zener is only supplying base drive to q 2 , and it derives its bias from the output, the zener current remains essential constant, which minimizes changes in v z due to i z excursions. also, it may be possible (v z 10 v) to match the zener to the base-emitter junction of q 2 for an output that is insensitive to temperature changes. the constant current source looks like a very high load impedance to the collector of q 2 thus assuming a very high voltage gain. there are three primary advantages gained with this configuration over the basic emitter follower: 1. the increased voltage gain of the circuit with the addition of q 2 will improve regulation for changes in both load and input. 2. the zener current excursions are reduced, thereby improving regulation. 3. for certain voltages the configuration allows good temperature compensation by matching the temperature characteristics of the zener to the base-emitter junction of q 2 . the series pass regulator is superior to the other transistor regulators thus far discussed. it has good efficiency, better stability and regulation, and is simple enough to be economically practical for a large percentage of applications.
http://onsemi.com 360 figure 11. block diagram of regulator with feedback regulating power element control unit amplifier reference and error detection load input output employing feedback for optimum regulation the regulators discussed thus far do not employ any feedback techniques for precise control and compensation and, therefore, find limited use where an ultra precise regulator is required. in the more sophisticated regulators some form of error detection is incorporated and amplified through a feedback network to closely control the power elements as illustrated in the block diagram of figure 11. regulating circuits of this type will vary in complexity and configuration from application to application. this technique can best be illustrated with a couple of actual circuits of this type. the feedback regulators will generally be some form of series pass regulator, for optimum performance and efficiency. a practical circuit of this type that is extensively utilized is shown in figure 12. in this circuit, the zener establishes a reference level for the differential amplifier composed of q 4 and q 5 which will set the base drive for the control transistor q 3 to regulate the series high gain transistor combination of q 1 and q 2 . the differential amplifier samples the output at the voltage dividing network of r 8 , r 9 , and r 10 . this is compared to the reference voltage provided by the zener z 1 . the difference, if any, is amplified and fed back to the control elements. by adjusting the potentiometer, r 9 , the output level can be set to any desired value within the range of the supply. (the output voltage is set by the relation v o = v z [(r x + r y )/r x ].) by matching the transistor q 4 and q 5 for variations in v be and gain with temperature changes and incorporating a temperature compensated diode as the reference, the circuit will be ultra stable to temperature effects. the regulation and stability of this circuit is very good, and for this reason is used in a large percentage of commercial power supplies. figure 12. series pass regulator with error detection and feedback amplification derived from a differential amplifier r 1 r 4 q 2 q 4 q 3 c 1 q 1 r 2 r 3 q 5 r l z 1 r 5 r 6 r 7 r 9 r 10 + - - r 8 r x r y + v i v o
http://onsemi.com 361 figure 13. series pass regulator with temperature compensated reference amplifier + - + - r 1 r 2 r l r 3 r 5 r 4 r 8 r 6 r 7 d 1 q 1 q 2 q 3 reference amplifier v i v o another variation of the feedback series pass regulator is shown in figure 13. this circuit incorporates a stable temperature compensated reference amplifier as the primary control element. this circuit also employs error detection and amplified feedback compensation. it is an improved version over the basic series pass regulator shown in figure 10. the series element is composed of a darlington high gain configuration formed by q 1 and q 2 for an improved regulation factor. the combined gain of the reference amplifier and q 3 is incorporated to control the series unit. this reduced the required collector current change of the reference amplifier to control the regulator so that the bias current remains close to the specified current for low temperature coefficient. also the germanium diode d 1 will compensate for the base to emitter change in q 3 and keep the reference amplifier collector biasing current fairly constant with temperature changes. proper biasing of the zener and transistor in the reference amplifier must be adhered to if the output voltage changes are to be minimized. constant current sources for regulator applications several places throughout this chapter emphasize the need for maintaining a constant current level in the various biasing circuits for optimum regulation. as was mentioned previously in the discussion on the basic series pass regulator, the current limiter diode can be effectively used for the purpose. aside from the current limiter diode a transistorized source can be used. a widely used technique is shown incorporated in a basic series pass regulator in figure 14. the circuit is used as a preregulated current source to supply the biasing current to the transistor q 2 . the constant current circuit is seldom used alone, but does find wide use in conjunction with voltage regulators to supply biasing current to transistors or reference diodes for stable operation. the zener z 2 establishes a fixed voltage across r e and the base to emitter of q 3 . this gives an emitter current of i e = (v z v be )/r e which will vary only slightly for changes in input voltage and temperature. figure 14. constant current source incorporated in a basic regulator circuit q 1 q 2 q 3 r b1 z 1 r l r e z 2 r b2 constant current source - - + + v i v o
http://onsemi.com 362 impedance cancellation one of the most common applications of zener diodes is in the general category of reference voltage supplies. the function of the zener diode in such applications is to provide a stable reference voltage during input voltage variations. this function is complicated by the zener diode impedance, which effectively causes an incremental change in zener breakdown voltage with changing zener current. figure 15. impedance cancellation with an uncompensated zener r 2 r 1 z 1 tc 1 + - v i it is possible, however, by employing a bridge type circuit which includes the zener diode and current regulating resistance in its branch legs, to effectively cancel the effect of the zener impedance. consider the circuit of figure 15 as an example. this is the common configuration for a zener diode voltage regulating system. the zener impedance at 20 ma of a 1n4740 diode is typically 2 ohms. if the supply voltage now changes from 30 v to 40 v, the diode current determined by r 1 changes from 20 to 30 ma; the average zener impedance becomes 1.9 ohms; and the reference voltage shifts by 19 mv. this represents a reference change of .19%, an amount far too large for an input change of 30% in most reference supplies. the effect of zener impedance change with current is relatively small for most input changes and will be neglected for this analysis. assuming constant zener impedance, the zener voltage is approximated by (37) v z = v z + z(i z i z ) where v z is the new zener voltage v z is the former zener voltage i z is the new zener current i z is the new zener current flowing at v z r z is the zener impedance then let the input voltage v i in figure 15 increase by an amount d v i then d i = d v i d v z r 1 d v z r z also d i = solving d v i r z d v z r z d v z r 1 = 0 d v z d v i or = r z r 1 + r z (39) (38) (40) d v z = z d i z equation 40 merely states that the change in reference voltage with input tends to zero when the zener impedance tends also to zero, as expected. the figure of merit equation can be applied to the circuits of figure 16 and 17 to explain impedance cancellation. the change factor equations for each leg and the reference voltage v r are: (41) (43) (42) cf vz = d v z d v i r z r 1 + r z == r a r 3 r 2 + r 3 d v 2 d v i cf v2 = = = r b r z r 1 + r z d v r d v i cf vr = = = r a r b r 3 r 2 + r 3 = figure 16. standard voltage regulation circuit r 1 v i d v i i v z figure 17. impedance cancellation bridge v i d v i r 3 r 1 r 2 v r v 2 v z
http://onsemi.com 363 since the design is to minimize cf vr , r b can be set equal to r a . the input regulation factors are: (44) (46) (45) g vz = d v z d v i v i vi z
= 1 v i v z 1 + v z v i v i vi z
r 1 rz g v2 = d v 2 d v i v i vi z
= 1 v i v 2 g vr = d v r d v i v i vi z
= 1 v i v r 1 + v i vi z
r 1 rz v i vi z
v z v i v i vi z
1 1 r b r a it is seen that g vr can be minimized by setting r b = r a . note that it is not necessary to match r 3 to r z and r 2 to r 1 . thus r 3 and r 2 can be large and hence dissipate low power. this discussion is assuming very light load currents.
http://onsemi.com 364 zener protective circuits and techniques: basic design considerations introduction the reliability of any system is a function of the ability of the equipment to operate satisfactorily during moderate changes of environment, and to protect itself during otherwise damaging catastrophic changes. the silicon zener diode offers a convenient, simple but effective means of achieving this result. its precise voltage sensitive breakdown characteristic provides an accurate limiting element in the protective circuit. the extremely high switching speed possible with the zener phenomenon allows the circuit to react faster by orders of magnitude that comparable mechanical and magnetic systems. by shunting a component, circuit, or system with a zener diode, the applied voltage cannot exceed that of the particular device's breakdown voltage. (see figure 1.) a device should be chosen so that its zener voltage is somewhat higher than the nominal operating voltage but lower than the value of voltage that would be damaging if allowed to pass. in order to adequately incorporate the zener diode for circuit protection, the designer must consider several factors in addition to the required zener voltage. the first thing the designer should know is just what transient characteristics can be anticipated, such as magnitude, duration, and the rate of reoccurrence. for short duration transients, it is usually possible to suppress the voltage spike and allow the zener to shunt the transient current away from the load without a circuit shutdown. on the other hand, if the over-voltage condition is for a long duration, the protective circuit may need to be complimented with a disconnect element to protect the zener from damage created by excessive heating. in all cases, the end circuit will have to be designed around the junction temperature limits of the device. the following sections illustrate the most common zener protective circuits, and will demonstrate the criteria to be followed for an adequate design. basic protective circuits for supply transients the simple zener shunt protection circuit shown in figure 1 is widely used for supply voltage transient protection where the duration is relatively short. the circuit applies whether the load is an individual component or a complete circuit requiring protection. whenever the input exceeds the zener voltage, the device avalanches into conduction clamping the load voltage to v z . the total current the diode must carry is determined by the magnitude of the input voltage transient and the total circuit impedance minus the load current. the worst case occurs when load current is zero and may be expressed as follows: i z(max) = v i(max) v z r s (1) figure 1. basic shunt zener transient protection circuit load z power supply r s + - the maximum power dissipated by the zener is p z(max) =i z(max) v z(max) = v i(max) v z r s (2) v z(max) also, more than one device can be used, i.e., a series string, which will reduce the percentage of total power to be dissipated per device by a factor equal to the number of devices in series. the number of diodes required can be found from the following expression: number = p z(max) p z (allowable per device) (3) any fraction of a zener must be taken as the next highest whole number. this design discussion has been based upon the assumption that the transient is of a single shot, non-recurrent type. for all practical purposes it can be considered non-recurrent if the aoff periodo between transients is at least four times the thermal time constant of the device. if the aoff periodo is shorter than this, then the design calculations must include a factor for the duty cycle. this is discussed in detail in chapter 4. in chapter 4 there are also some typical curves relating peak power, pulse duration and duty cycle that may be appropriate for some designs. obviously, the factor that limits the feasibility of the basic zener shunt protective circuit is the pulse durations ato. as the duration increases, the allowable peak power for a given configuration decreases and will approach a steady state condition.
http://onsemi.com 365 figure 2. overvoltage protection with zener diodes and fuses load rc v s r s fuse power supply + - when the anticipated transients expected to prevail for a specific situation are of long duration, a basic zener shunt becomes impractical, in such a case the circuit can be improved by using a complementary disconnect element. the most common overload protective element is without a doubt the standard fuse. the common fuse adequately protects circuit components from over-voltage surges, but at the same time must be chosen to eliminate anuisance fusingo which results when the maximum current rating of the fuse is too close to the normal operational current of the circuit. an example problem: selecting a fuse-zener combination consider the case illustrated in figure 2. here the load components are represented by a parallel combination of r and c, equivalent to many loads found in practice. the maximum capacitor voltage rating is usually the circuit-voltage limiting factor due to the cost of high voltage capacitors. consequently, a protective circuit must be designed to prevent voltage surges greater than 1.5 times normal working voltage of the capacitor. it is common, however, for the supply voltage to increase to 135% normal for long periods. examination of fuse manufacturers' melting time-current curves shows the difficulty of trying to select a fuse which will melt rapidly at overload (within one or two cycles of the supply frequency to prevent capacitor damage), and will not melt when subjected to voltages close to overload for prolonged periods. by connecting a zener diode of correct voltage ratings across the load as shown, a fuse large enough to withstand normal current increases for long periods may be chosen. the sudden current increase when zener breakdown occurs melts the fuse rapidly and protects the load from large surges. in figure 3, fuse current was plotted against supply voltage to illustrate the improvement in load protection obtained with zener-fuse combinations. fuse current aao would be selected to limit current resulting from voltage surges above 112 v to 90 ma, which would melt the fuse in 100 ms. it is a simple matter, however, to select a fuse which melts in 30 ms at 200 ma but is unaffected by 100 ma currents. the zener connection allows fuse current abo to be selected, eliminating this design problem and providing a faster, more reliable protective circuit. if the same fuse was used without the zener diode, a supply voltage of 210 volts would be reached before the fuse would begin to protect the load. v s , supply voltage (volts) 60 70 80 90 100 110 120 130 140 60 80 100 120 140 160 180 200 220 a" b" fuse current (ma) figure 3. fuse current versus supply voltage resistive load only zener diode with, resistive load zener breakdown, voltage normal load voltage selection of the correct power rating of zener diodes to be used for surge protection depends upon the magnitude and duration of anticipated surges. often in circuits employing both fuses and zener diodes, the limiting surge duration will be the melting time of the fuse. this, in turn, depends on the nature of the load protected and the length of time it will tolerate an overload. as a first solution to the example problem, consider a zener diode with a nominal breakdown voltage of 110 volts measured at a test current (i zt ) of 110 ma. since the fuse requires about 200 ma to melt and 100 ma are drawn through the load at this voltage, the load voltage will never exceed the zener breakdown voltage on slowly rising inputs. transients producing currents of approximately 200 ma but of shorter duration than 30 ms will simply be clipped by zener action and diverted from the load. transients of very high voltage will produce larger currents and, hence, will melt the fuse more rapidly. in the limiting case where transient power might eventually destroy the zener diode, the fuse always melts first because of the slower thermal time constant inherent in the zener diode's larger geometry. the curves in figure 4 illustrate the change in zener voltage as a function of changing current for a typical device type.
http://onsemi.com 366 log i z/ i zk change, in v z v z = v 1 v 2 v 3 figure 4. change in v z for changes in i z if an actual curve for the device being used is not available, the zener voltage at a specific current above or below the test current may be approximated by equation 4. where: v = v z + z zt (ii zt ) v z = zener voltage at test current i zt z zt = zener impedance at test current i zt i zt = test current v = zener voltage at current i (4) for a given design, the maximum zener voltage to expect for the higher zener current should be determined to make sure the limits of the circuit are met. if the maximum limit is excessive for the original device selection, the next lower voltage rating should be used. the previous discussion on design consideration for protective circuits incorporating fuses is applicable to any protective element that permanently disconnects the supply when actuated. rather than a fuse, a non-resetting magnetic circuit breaker could have been used, and the same reasoning would have applied. load current surges in many actual problems the designer must choose a protective circuit to perform still another task. not only must the equipment be protected from the voltage surges in the supply, but the supply itself often requires protection from shorts or partial shorts in the load. a direct short in the load is fairly easy to handle, as the drastic current change permits the use of fuses with ratings high enough to avoid problems with supply surges. more common is the partial short, as illustrated in figure 5. if a short circuit occurs in the capacitive section of the load (represented by c) the resulting fault current is limited by the resistive section (represented by r) to a value which may not be great enough to melt the fuse. the fault current could be sufficient, however, to damage the supply and other components in the load. the problem is resolved by employing a zener diode to protect against supply surges as described in the previous section, and by selecting a separate fuse to protect from load faults. the load fuse in figure 5 is chosen close to the normal operating current. abnormal supply surges do not affect it and equipment operates reliably but with ample protection for the supply against load changes. zener diodes and reclosing disconnect elements an interesting application of zener diodes as overvoltage protectors, which offers the possibility of designing for both long and short duration surges, is shown in figure 6. figure 6. zener diode reclosing circuit breaker protective circuit r i z load power supply reclosing circuit breaker in the event of a voltage overload exceeding a chosen zener voltage, a large current will be drawn through the diode. the reclosing disconnect element opens after an interval determined by its time constant, and the supply is disconnected. after another interval, again depending on the switch characteristics, the supply is reconnected and the voltage asampledo by the zener diode. this leads to an aon-offo action which continues until the supply voltage drops below the predetermined limit. at no time can the load voltage or current exceed that set by the zener. the chief advantage in this type of circuit is the elimination of fuse replacement in similar fusing circuits, while providing essentially the same load protection. figure 5. supply and load with zener diode; fuse circuitry power supply r supply fuse load fuse r c load
http://onsemi.com 367 figure 7. (typical) voltage, current and temperature waveforms for a thermal breaker time time time time volts supply voltage c thermal breaker temperature amps zener diode current zener diode junction temperature surge voltage over voltage normal operating voltage break temperature make temperature maximum t j c it is difficult to define a set design procedure in this case, because of the wide variety of reclosing, magnetic and thermal circuit breakers available. care should be taken to ensure that the power dissipated in the zener diode during the conduction time of the disconnect element does not exceed its rating. as an example, assume the disconnect element was a thermal breaker switch. the waveforms for a typical over-voltage situation are shown in figure 7. it is apparent that the highest zener diode junction temperature is reached during the first conduction period. at this time the thermal breaker is cold and requires the greatest time to reach its break temperature. the breaker then cycles thermally between the make and break temperatures as long as the supply voltage is greater than the zener voltage, as shown in figure 7. the zener diode current and junction temperature variation are shown in the last two waveforms of figure 7. overvoltage durations longer than the trip time of the thermal breaker do not affect the diode as the supply is disconnected. an overvoltage of much higher level simply causes the thermal breaker to open sooner. in effect, the zener diode rating must be high enough to ensure that maximum junction temperature is not reached during the longest interval that the thermal switch will be closed. manufacturers of thermally operated circuit breakers publish current-time curves for their devices similar to that shown in figure 8. by estimating the peak supply overvoltage and determining the maximum overvoltage tolerated by the load, an estimation of peak zener current can be made. the maximum breaker trip time may then be read from figure 8. (after the initial current surge, the duration of aofo time is determined entirely by the breaker characteristics and will vary widely with manufacture.) the zener diode junction temperature rise during conduction may be calculated now from the thermal time constant of the device and the heatsink used. because the reclosing circuit breaker is continually cycling on and off, the zener current takes on the characteristics of a repetitive surge, as can be seen in figure 7.
http://onsemi.com 368 30 20 10 0 01 23 current (amps) trip time (seconds) figure 8. trip time versus current for thermal breaker transistor overvoltage protection in many electronic circuits employing transistors, high internal voltages can be developed and, if applied to the transistors, will destroy them. this situation is quite common in transistor circuits that are switching highly inductive loads. a prime example of this would be in transistorized electronic ignition systems such as shown in figures 9a and 9b. the zener diode is an important component to assure solid state ignition system reliability. there are two basic methods of using a zener diode to protect an ignition transistor. these are shown in figures 9a and 9b. in figure 9b the transistor is protected by a zener diode connected between base and collector and in figure 9a, the zener is connected between emitter and collector. in both cases the voltage level of the zener must be selected carefully so that the voltage stress on the transistor is in a region where the safe operating area is adequate for reliable circuit operation. figure 10 illustrates asafeo and aunsafeo selection of a zener diode for collector-base protection of a transistor in the ignition coil circuit. it can be seen that the safe operating area of a transistor must be known if an adequate protective zener is to be selected. the zener diode must be able to take the stress of peak pulse current necessary to clamp the voltage rise across the transistor to a safe value. in a typical case, a 5 watt, 100 volt zener transient suppressor diode is required to operate with an 80 m s peak pulse current of 8 amperes when connected between the collector-emitter of the transistor. the waveform of this pulse current approaches a sine wave in shape (figure 11). the voltage rise across a typical transient suppressor diode due to this current pulse is shown in figure 12. this voltage rise of approximately 8 volts indicates an effective zener impedance of approximately 1 ohm. however, a good share of this voltage rise is due to the temperature coefficient and thermal time constant of the zener. the temperature rise of the zener diode junction is indicated by the voltage difference between the rise and fall of the current pulse. figure 9. transistor ignition systems with zener overvoltage surge protection 10 w 1/2 w 1 w 10 w 10 w 1 w 100 w 560 pf 2 m f 5 w 1n5374b 1n6295 10 w 2n5879 +12 v h.v. to dist. prestolite 201 mallory coil 28100 h.v. to dist. 200 v paper 2n6031 +12 v (a) (b)
http://onsemi.com 369 collectorbase zener clamp 10 0 9 8 7 6 5 4 3 2 1 0 safe unsafe i c 10 30 40 50 60 70 80 90 100 110 120 v ce collector emitter zener clamp typical transistor safe area limit figure 10. safe zener protection 20 load line safe time 10 m s/div 2 a/div zener current figure 11. zener diode current pulse 100 v zener voltage 1 v/div 1 a/div zener current 0 figure 12. voltage-current representation on 100 v zener in order to assure safe operation, the change in zener junction temperature for the peak pulse conditions must be analyzed. in making the calculation, the method described in chapter 3 should be used, taking into account duty cycle, pulse duration, and pulse magnitude. when the zener diode is connected between the collector and emitter of the transistor, additional power dissipation will result from the clipping of the ringing voltage of the ignition coil by the forward conduction of the zener diode. this power dissipation by the forward diode current will result in additional zener voltage rise. it is not uncommon to observe a 15-volt rise above the zener device voltage rating due to temperature coefficient and impedance under these pulse current conditions. the zener diode should be connected as close as possible to the terminals of the transistor the zener is intended to protect. this insures that induced voltage transients, caused by current changes in long lead lengths, are clamped by the zener and do not appear across the transistor.
http://onsemi.com 370 figure 13. dc-dc converter with surge protecting diodes + another example of overvoltage protection of transistor operating in an inductive load switch capacity is illustrated in figure 13. the dc-dc converter circuit shows a connection from collector to emitter of two zener diodes as collector overvoltage protectors. without some type of limiting device, large voltage spikes may appear at the collectors, due to the switching transients produced with normal circuit operation. when this spike exceeds the collector breakdown rating of the transistor, transistor life is considerably shortened. the zener diodes shown are chosen with zener breakdowns slightly below transistor breakdown voltage to provide the necessary clipping action. since the spikes are normally of short duration (0.5 to 5 m s) and duty cycle is low, normal chassis mounting provides adequate heatsinking. meter protection the silicon zener diode can be employed to prevent overloading sensitive meter movements used in low range dc and ac voltmeters, without adversely affecting the meter linearity. the zener diode has the advantage over thermal protective devices of instantaneous action and, of course, will function repeatedly for an indefinite time (as compared to the reset time necessary with thermal devices). while zener protection is presently available for voltages as low as 2.4 volts, forward diode operation can be used for meter protection where the voltage drop is much smaller. a typical protective circuit is illustrated in figure 14. here the meter movement requires 100 m amps for full scale deflection and has 940 ohms resistance. for use in a voltmeter to measure 25 v, approximately 249 thousand ohms are required in series. figure 14. meter protection with zener diode 70k 179 k 1n4746 (18 volt zener diode) + - 25 v m a the protection provided by the addition of an 18 volt zener is illustrated in figure 15. with an applied voltage of 25 volts, the 100 m amps current in the circuit produces a drop of 17.9 volts across the series resistance of 179 thousand ohms. a further increase in voltage causes the zener diode to conduct, and the overload current is shunted away from the meter. since on semiconductor zener diodes have zener voltages specified within 5 and 10%, a safe design may always be made with little sacrifice in meter linearity by assuming the lowest breakdown voltage within the tolerance. the shunting effect on the meter of the reverse biased diode is generally negligible below breakdown voltage (on the order of 0.5 full scale). for very precise work, the zener diode breakdown voltage must be accurately known and the design equations solved for the correct resistance values.
http://onsemi.com 371 200 0 50 100 150 200 total current ( m a) 150 100 50 0 meter current ( a) m with protective circuit figure 15. meter protection with zener diodes zener diodes used with scrs for circuit protection an interesting aspect of circuit protection incorporating the reliable zener diode is the protective circuits shown in figures 16 and 17. in a system that is handling large amounts of power, it may become impractical to employ standard zener shunt protection because of the large current it would be required to carry. the scr crowbar technique shown in figure 16 can be effectively used in these situations. the zener diode is still the transient detection component, but it is only required to carry the gate current for scr turn on, and the scr will carry the bulk of the shunt current. whenever the incoming voltage exceeds the zener voltage, it avalanches, supplying gate drive to the scr which, when fired, causes a current demand that will trip the circuit breaker. the resistors shown are for current limiting so that the scr and zener ratings are not exceeded. the circuit of figure 17 is designed to disconnect the supply in the event a specified load current is exceeded. this is done by means of a series sense resistor and a compatible zener to turn the shunt scr on. when the voltage across the series resistor, which is a function of the load current, becomes sufficient to break over the zener, the scr is fired, causing the circuit breaker to trip. figure 16. scr crowbar over-voltage protection circuit for ac circuit operation figure 17. scr longterm current overload protection r 2 r 3 r 5 r 6 r 1 r 4 ac zener zener scr scr circuit breaker circuit breaker
http://onsemi.com 372 zener transient suppressors the transient suppressor is used as a shunt element in exactly the same manner as a conventional zener. it offers the same advantages such as low insertion loss, immediate recovery after operation, a clamping factor approaching unity, protection against fast rising transients, and simple circuitry. the primary difference is that the transient suppressor extends these advantages to higher power levels. even in the event of transients with power contents far in excess of the capacity of the zeners, protection is still provided the load. when overloaded to failure, the zener will approximate a short. the resulting heavy drain will aid in opening the fuse or circuit breaker protecting the load against excess current. thus, even if the suppressor is destroyed, it still protects the load. the design of the suppressor-fuse combination for the required level of protection follows the techniques for conventional zeners discussed earlier in this chapter. transient suppression characteristics zener diodes, being nearly ideal clippers (that is, they exhibit close to an infinite impedance below the clipping level and close to a short circuit above the clipping level), are often used to suppress transients. in this type of application, it is important to know the power capability of the zener for short pulse durations, since they are intolerant of excessive stress. some on semiconductor data sheets such as the ones for devices shown in table 1 contain short pulse surge capability. however, there are many data sheets that do not contain this data and figure 18 is presented here to supplement this information. table 1. transient suppressor diodes series numbers steady state power package description 1n4728a 1 w do-41 double slug glass 1n6267a 5 w case 41a axial lead plastic 1n5333b 5 w case 102 surmetic 40 1n746a/957b /4370a 500 mw do-35 double slug glass 1n5221b 500 mw do-35 double slug glass some data sheets have surge information which differs slightly from the data shown in figure 18. a variety of reasons exist for this: 1. the surge data may be presented in terms of actual surge power instead of nominal power. 2. product improvements have occurred since the data sheet was published. 3. large dice are used, or special tests are imposed on the product to guarantee higher ratings than those shown in figure 18. 4. the specifications may be based on a jedec registration or part number of another manufacturer. the data of figure 18 applies for non-repetitive conditions and at a lead temperature of 25 c. if the duty cycle increases, the peak power must be reduced as indicated by the curves of figure 19. average power must be derated as the lead or ambient temperature rises above 25 c. the average power derating curve normally given on data sheets may be normalized and used for this purpose. 100 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 pulse width (ms) 50 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 p pk(nom) , nominal peak power (kw) figure 18. peak power ratings of zener diodes 1n6267 series 5 watt types 250 mw to 1 w types glass do35 & glass do41 1 to 3 w types plastic do41 0.1 0.2 0.5 1 25 10 50 20 100 d, duty cycle (%) 1 0.7 0.5 0.3 0.2 0.1 derating factor 0.07 0.05 0.03 0.02 0.01 figure 19. typical derating factor for duty cycle pulse width 10 ms 1 ms 100 m s 10 m s when it is necessary to use a zener close to surge ratings, and a standard part having guaranteed surge limits is not suitable, a special part number may be created having a surge limit as part of the specification. contact your nearest on semiconductor oem sales office for capability, price, delivery, and minimum order quantities.
http://onsemi.com 373 mathematical model since the power shown on the curves is not the actual transient power measured, but is the product of the peak current measured and the nominal zener voltage measured at the current used for voltage classification, the peak current can be calculated from: i z(pk) = p (pk) v z(nom) (5) the peak voltage at peak current can be calculated from: (6) v z(pk) = f c x v z(nom) where f c is the clamping factor. the clamping factor is approximately 1.20 for all zener diodes when operated at their pulse power limits. for example, a 5 watt, 20 volt zener can be expected to show a peak voltage of 24 volts regardless of whether it is handling 450 watts for 0.1 ms or 50 watts for 10 ms. this occurs because the voltage is a function of junction temperature and ir drop. heating of the junction is more severe at the longer pulse width, causing a higher voltage component due to temperature which is roughly offset by the smaller ir voltage component. for modeling purposes, an approximation of the zener resistance is needed. it is obtained from: (7) r z(nom) = v z(nom) (f c 1) p pk(nom) /v z(nom) the value is approximate because both the clamping factor and the actual resistance are a function of temperature. circuit considerations it is important that as much impedance as circuit constraints allow be placed in series with the zener diode and the components to be protected. the result will be a lower clipping voltage and less zener stress. a capacitor in parallel with the zener is also effective in reducing the stress imposed by very short duration transients. to illustrate use of the data, a common application will be analyzed. the transistor in figure 20 drives a 50 mh solenoid which requires 5 amperes of current. without some means of clamping the voltage from the inductor when the transistor turns off, it could be destroyed. the means most often used to solve the problem is to connect an ordinary rectifier diode across the coil; however, this technique may keep the current circulating through the coil for too long a time. faster switching is achieved by allowing the voltage to rise to a level above the supply before being clamped. the voltage rating of the transistor is 60 v, indicating that approximately a 50 volt zener will be required. the peak current will equal the on-state transistor current (5 amperes) and will decay exponentially as determined by the coil l/r time constant (neglecting the zener impedance). a rectangular pulse of width l/r (0.01 s) and amplitude of i pk (5 a) contains the same energy and may be used to select a zener diode. the nominal zener power rating therefore must exceed (5 a 50) = 250 watts at 10 ms and a duty cycle of 0.01/2 = 0.5%. from figure 19, the duty cycle factor is 0.62 making the single pulse power rating required equal to 250/0.62 = 403 watts. from figure 18, one of the 1n6267 series zeners has the required capability. the 1n6287 is specified nominally at 47 volts and should prove satisfactory. although this series has specified maximum voltage limits, equation 7 will be used to determine the maximum zener voltage in order to demonstrate its use. r z = 47(1.20 1) 500/47 9.4 10.64 = = 0.9 w at 5 amperes, the peak voltage will be 4.5 volts above nominal or 51.5 volts total which is safely below the 60 volt transistor rating. figure 20. circuit example 10 ms 2 s 50 mh, 5 w 26 vdc used to select a zener diode having the proper voltage and power capability to protect the transistor
http://onsemi.com 374 zener voltage sensing circuits and applications basic concepts of voltage sensing numerous electronic circuits require a signal or voltage level to be sensed for circuit actuation, function control, or circuit protection. the circuit may alter its mode of operation whenever an interdependent signal reaches a particular magnitude (either higher or lower than a specified value). these sensing functions may be accomplished by incorporating a voltage dependent device in the system creating a switching action that controls the overall operation of the circuit. the zener diode is ideally suited for most sensing applications because of its voltage dependent characteristics. the following sections are some of the more common applications and techniques that utilize the zener in a voltage sensing capacity. figure 1. basic transistor-zener diode sensing circuits r 2 r 1 r 3 r 1 r 2 z 1 r 3 v in v in z 1 q 1 q 1 v o1 v o2 (a) (b) transistor-zener sensing circuits the zener diode probably finds its greatest use in sensing applications in conjunction with other semiconductor devices. two basic widely used techniques are illustrated in figures 1a and 1b. in both of these circuits the output is a function of the input voltage level. as the input goes from low to high, the output will switch from either high to low (base sense circuit) or low to high (emitter sense circuit), (see figure 2). the base sense circuit of figure 1a operates as follows: when the input voltage is low, the voltage dropped across r 2 is not sufficient to bias the zener diode and base emitter junction into conduction, therefore, the transistor will not conduct. this causes a high voltage from collector to emitter. when the input becomes high, the zener is biased into conduction, the transistor turns on, and the collector to emitter voltage, which is the output, drops to a low value. figure 2. outputs of transistor-zener voltage sensing circuits r 2 + r 1 r 2 v z + v be(sat) v in = sensing level time time time v in both circuits v out base sense v out emitter sense v o2 v o1 v in (output of figure 1b) (output of figure 1a)
http://onsemi.com 375 the emitter sense circuit of figure 1b operates as follows: when the input is low the voltage drop across r 3 (the output) is negligible. as the input voltage increases the voltage drop across r 2 biases the zener into conduction and forward biases the base-emitter junction. a large voltage drop across r 3 (the output voltage) is equal to the product of the collector current times the resistance, r 3 . the following relationships indicate the basic operating conditions for the circuits in figure 1. circuit output 1a 1b high v out = v in i co r 3 @ v in low v out = v in i c r 3 = v ce(sat) low v out = v in v z v ce(off) = i co r 3 high v out = v in v ce(sat) = i c r 3 in addition, the basic circuits of figure 1 can be rearranged to provide inverse output. automotive alternator voltage regulator electromechanical devices have been employed for many years as voltage regulators, however, the regulation setting of these devices tend to change and have mechanical contact problems. a solid state regulator that controls the charge rate by sensing the battery voltage is inherently more accurate and reliable. a schematic of a simplified solid state voltage regulator is shown in figure 3. the purpose of an alternator regulator is to control the battery charging current from the alternator. the charge level of the battery is proportional to the battery voltage level. consequently, the regulator must monitor the battery voltage level allowing charging current to pass when the battery voltage is low. when the battery has attained the proper charge the charging current is switched off. in the case of the solid state regulator of figure 3, the charging current is controlled by switching the alternator field current on and off with a series transistor switch, q 2 . the switching action of q 2 is controlled by a voltage sensing circuit that is identical to the base sense circuit of figure 1a. when under-charged, the zener z 1 does not conduct keeping q 1 off. the collector-emitter voltage of q 1 supplies a forward bias to the base-emitter of q 2 , turning it on. with q 2 turned on, the alternator field is energized allowing a charging current to be delivered to the battery. when the battery attains a proper charge level, the zener conducts causing q 1 to turn on, and effectively shorting out the base-emitter junction of q 2 . this short circuit cuts off q 2 , turns off the current flowing in the field coil which consequently, reduces the output of the alternator. diode d 1 acts as a field suppressor preventing the build up of a high induced voltage across the coil when the coil current is interrupted. figure 3. simplified solid state voltage regulator r 3 r 1 r 2 r 4 b+ z 1 q 1 q 2 alternator output d 1 alternator field
http://onsemi.com 376 in actual operation, this switching action occurs many times each second, depending upon the current drain from the battery. the battery charge, therefore, remains essentially constant and at the maximum value for optimum operation. a schematic of a complete alternator voltage regulator is shown in figure 4. it is also possible to perform the alternator regulation function with the sensing element in the emitter of the control transistor as shown in figure 5. in this configuration, the sensing circuit is composed of z 1 and q 1 with biasing components. it is similar to the sensing circuit shown in figure 1b. the potentiometer r 1 adjusts the conduction point of q 1 establishing the proper charge level. when the battery has reached the desired level, q 1 begins to conduct. this draws q 2 into conduction, and therefore shorts off q 3 which is supplying power to the alternator field. this type of regulator offers greater sensitivity with an increase in cost. figure 4. complete solid state alternator voltage regulator figure 5. alternator regulator with emitter sensor b+ 100 w 15 w 30 w 30 w 70 w 1n961b sensing zener diode rt* ther mistor 0.05 m f feedback capacitor 1n4001 field suppression diode to alternator field coil 2n5879 1n3493 bias diode alternator output 0.05 w 2n4234 *the value of rt depends on the slope of the voltage regulation versus temperature curve. b+ alternator output d 2 d 1 q 3 r 5 r 4 q 2 r 6 z 1 q 1 r 3 r 1 r 2 alternator field
http://onsemi.com 377 unijunction-zener sense circuits unijunction transistor oscillator circuits can be made go-no go voltage sensitive by incorporating a zener diode clamp. the ujt operates on the criterion: under proper biasing conditions the emitter-base one junction will breakover when the emitter voltage reaches a specific value given by the equation: v p = h v bb + v d (1) where: v p h v bb v d = peak point emitter voltage = intrinsic stand-off ratio for the device = interbase voltage, from base two to base one = emitter to base one diode forward junction drop obviously, if we provide a voltage clamp in the circuit such that the conditions of equation 1 are met only with restriction on the input, the circuit becomes voltage sensitive. there are two basic techniques used in clamping ujt relaxation oscillators. they are shown in figure 6 and figure 7. the circuit in figure 6 is that of a clamped emitter type. as long as the input voltage v in is low enough so that v p does not exceed the zener voltage v z , the circuit will generate output pulses. at some given point, the required v p for triggering will exceed v z . since v p is clamped at v z , the circuit will not oscillate. this, in essence, means the circuit is go as long as v in is below a certain level, and no go above the critical clamp point. the circuit of figure 7, is a clamped base ujt oscillator. in this circuit v bb is clamped at a voltage v z and the emitter tied to a voltage dividing network by a diode d 1 . when the input voltage is low, the voltage drop across r 2 is less than v p . the forward biased diode holds the emitter below the trigger level. as the input increases, the r 2 voltage drop approaches v p . the diode d 1 becomes reversed biased and, the ujt triggers. this phenomenon establishes the operating criterion that the circuit is no go at a low input and go at an input higher than the clamp voltage. therefore, the circuits in figures 6 and 7 are both input voltage sensitive, but have opposite input requirements for a go condition. to illustrate the usefulness of the clamped ujt relaxation oscillators, the following two sections show them being used in practical applications. figure 6. ujt oscillator, go e no go output, go for low v in e no go for high v in + - r t c z ujt r b2 r b1 v p = h v bb + v d v out v in v e v bb figure 7. ujt e no go output, no go for low v in e go for high v in z r 1 r 2 + - r t r b2 r b1 c t d 1 v in v out ujt v e
http://onsemi.com 378 battery voltage sensitive scr charger a clamped emitter unijunction sensing circuit of the type shown in figure 6 makes a very good battery charger (illustrated in figure 8). this circuit will not operate until the battery to be charged is properly connected to the charger. the battery voltage controls the charger and will dictate its operation. when the battery is properly charged, the charger will cease operation. the battery charging current is obtained through the controlled rectifier. triggering pulses for the controlled rectifier are generated by unijunction transistor relaxation oscillator (figure 9). this oscillator is activated when the battery voltage is low. while operating, the oscillator will produce pulses in the pulse transformer connected across the resistance, r gc (r gc represents the gate-to-cathode resistance of the controlled rectifier), at a frequency determined by the resistance, capacitance, r.c. time delay circuit. since the base-to-base voltage on the unijunction transistor is derived from the charging battery, it will increase as the battery charges. the increase in base-to-base voltage of the unijunction transistor causes its peak point voltage (switching voltage) to increase. these waveforms are sketched in figure 9 (this voltage increase will tend to change the pulse repetition rate, but this is not important). figure 8. 12 volt battery charger control figure 9. ujt relaxation oscillator operation rectified a.c. voltage from charger r 3 c 1 ujt eb 2 r 2 ac g scr v 12 v - t 1 b 1 r 1 3.9k, 1/2 w r 2 1k, pot. r 3 5.1k, 1/2 w c 1 .25 m f z 1 1n753, 6.2 v scr mcr3813 v b 1 b 2 battery charging battery charged z 1 r 1 r 2 c 1 time time time v c 1 v r gc zener voltage ujt peak point voltage scr conducts scr nonconducting ujt b 2 b 1 r gc t 1 v batt. + ujt 2n2646 t 1 pr 1 , 30 t , no. 22 sec, 45t, no. 22 core: ferrox cube 203f181303 a + r 1 z 1
http://onsemi.com 379 when the peak point voltage (switching voltage) of the unijunction transistor exceeds the breakdown voltage of the zener diode, z 1 , connected across the delay circuit capacitor, c 1 , the unijunction transistor ceases to oscillate. if the relaxation oscillator does not operate, the controlled rectifier will not receive trigger pulses and will not conduct. this indicates that the battery has attained its desired charge as set by r 2 . the unijunction cannot oscillate unless a voltage somewhere between 3 volts and the cutoff setting is present at the output terminals with polarity as indicated. therefore, the scr cannot conduct under conditions of a short circuit, an open circuit, or a reverse polarity connection to the battery. alternator regulator for permanent magnet field in alternator circuits such as those of an outboard engine, the field may be composed of a permanent magnet. this increases the problem of regulating the output by limiting the control function to opening or shorting the output. because of the high reactance source of most alternators, opening the output circuit will generally stress the bridge rectifiers to a very high voltage level. it is, therefore, apparent that the best control function would be shorting the output of the alternator for regulation of the charge to the battery. figure 10 shows a permanent magnet alternator regulator designed to regulate a 15 ampere output. the two scrs are connected on the ac side of the bridge, and short out the alternator when triggered by the unijunction voltage sensitive triggering circuit. the sensing circuit is of the type shown in figure 7. the shorted output does not appreciably increase the maximum output current level. a single scr could be designed into the dc side of the bridge. however, the rapid turn-off requirement of this type of circuit at high alternator speeds makes this circuit impractical. the unijunction circuit in figure 10 will not oscillate until the input voltage level reaches the voltage determined by the intrinsic standoff ratio. the adjustable voltage divider will calibrate the circuit. the series diode in the voltage divider circuit will compensate for the emitter-base-one diode temperature change, consequently, temperature compensation is necessary only for the zener diode temperature changes. due to the delay in charging the unijunction capacitor, when the battery is disconnected the alternator voltage will produce high stress voltage on all components before the scrs will be fired. the 1n971b zener was included in the circuit to provide a trigger pulse to the scrs as soon as the alternator output voltage level approaches 30 volts. figure 10. permanent magnet field alternator regulator sec. 1 sec. 2 pri. mcr 23042 alt. out mcr 23042 mda2500 1n960b 200 w 5k w 27 w 0.1 m f 2n2646 1n971b t1 1n4001 200 w 27 w battery + t1 core: arnold no. 4t5340 d1 dd1 primary 125 turns awg 36 sec no. 1 125 turns awg 36 sec no. 2 125 turns awg 36 trifilar wound +
http://onsemi.com 380 figure 11. zener-resistor voltage sensitive circuit figure 12. improving meter resolution + - z r base circuit v z ++ v in v out v in v out (level detection) (magnitude reduction) z r + - + - v z = 20 v voltmeter 10 v full scale typical outputs v in v out v in = 24 v - 28 v zener-resistor voltage sensing a simple but useful sense circuit can be made from just a zener diode and resistor such as shown in figure 11. whenever the applied signal exceeds the specific zener voltage v z , the difference appears across the dropping resistor r. this level dependent differential voltage can be used for level detection, magnitude reduction, wave shaping, etc. an illustrative application of the simple series zener sensor is shown in figure 12, where the resistor drop is monitored with a voltmeter. if, for example, the input is variable from 24 to 28 volts, a 30 voltmeter would normally be required. unfortunately, a 4 volt range of values on a 30 volt scale utilizes only 13.3% of the meter movement e greatly limiting the accuracy with which the meter can be read. by employing a 20 volt zener, one can use a 10 voltmeter instead of the 30 volt unit, thereby utilizing 40% of the meter movement instead of 13.3% with a corresponding increase in accuracy and readability. for ultimate accuracy a 24 volt zener could be combined with a 5 voltmeter. this combination would have the disadvantage of providing little room for voltage fluctuations, however. in figure 13, a number of sequentially higher-voltage zener sense circuits are cascaded to actuate transistor switches. as each goes into avalanche its respective switching transistor is turned on, actuating the indicator light for that particular voltage level. this technique can be expanded and modified to use the zener sensors to actuate some form of logic system. figure 13. sequential voltage level indicator z 1 q 1 q 2 q 3 r 1 r 2 r 3 r e2 r e1 r e3 z 2 z 3 light (1) light (2) light (3) input output
http://onsemi.com 381 miscellaneous applications of zener type devices introduction many of the commonly used applications of zener diodes have been illustrated in some depth in the preceding chapters. this chapter shows how a zener diode may be used in some rarer applications such as voltage translators, to provide constant current, wave shaping, frequency control and synchronized scr triggers. the circuits used in this chapter are not intended as finished designs since only a few component values are given. the intent is to show some general broad ideas and not specific designs aimed at a narrow use. frequency regulation of a dc to ac inverter zener diodes are often used in control circuits, usually to control the magnitude of the output voltage or current. in this unusual application, however, the zener is used to control the output frequency of a current feedback inverter. the circuit is shown in figure 1. figure 1. frequency controlled current feedback inverter z 1 q 1 q 2 t 1 n c n 6 n 6 n c b 1 b 2 + a - n 1 n 1 n 2 t 2 load the transformer t 1 functions as a current transformer providing base current i b = (n c /n b )i c . without the zener diode, the voltage across n b windings of the timing transformer t 1 is clamped to v be of the on device, giving an inverter frequency of f = v be x 10 8 4b s1 a 1 n b where b s1 a 1 is the flux capacity of t 1 transformer core. the effect on output frequency of v be variations due to changing load or temperature can be reduced by using a zener diode in series with v be as shown in figure 1. for this circuit, the output frequency is given by f = (v be + v z ) x 10 8 4b s1 a 1 n b if v be is small compared to the zener voltage v z , good frequency accuracy is possible. for example, with v z = 9.1 volts, a 40 watt inverter using 2n3791 transistors (operating from a 12 volt supply), exhibited frequency regulation of 2% with 25% load variation. care should be taken not to exceed v (br)ebo of the non-conducting transistor, since the reverse emitter-base voltage will be twice the introduced series voltage, plus v be of the conducting device. transformer t 2 should not saturate at the lowest inverter frequency. inverter starting is facilitated by placing a resistor from point a to b 1 or a capacitor from a to b 2 . simple square wave generator the zener diode is widely used in wave shaping circuits; one of its best known applications is a simple square wave generator. in this application, the zener clips sinusoidal waves producing a square wave such as shown in figure 2a. in order to generate a wave with reasonably vertical sides, the ac voltage must be considerably higher than the zener voltage. clipper diodes with opposing junctions built into the device are ideal for applications of the type shown in figure 2b.
http://onsemi.com 382 (a) single zener diode square wave generator (b) opposed zener diodes square wave generator figure 2. zener diode square wave generator z 1 z z 2 r r zener voltage forward drop voltage zener z 1 voltage zener z 2 voltage a.c. input output a.c. input output
http://onsemi.com 383 transient voltage suppression introduction electrical transients in the form of voltage surges have always existed in electrical distribution systems, and prior to the implementation of semiconductor devices, they were of minor concern. the vulnerability of semiconductors to lightning strikes was first studied by bell laboratories in 1961. 1 a later report tried to quantify the amount of energy certain semiconductors could absorb before they suffered latent or catastrophic damage from electrostatic discharge. 2 despite these early warnings, industry did not begin to address the issue satisfactorily until the late 1970s. listed below are the seven major sources of overvoltage. ? lightning ? sunspots ? switching of loads in power circuits ? electrostatic discharge ? nuclear electromagnetic pulses ? microwave radiation ? power cross most electrical and electronic devices can be damaged by voltage transients. the difference between them is the amount of energy they can absorb before damage occurs. because many modern semiconductor devices, such as small signal transistors and integrated circuits can be damaged by disturbances that exceed the voltage ratings at only 20 volts or so, their survivability is poor in unprotected environments. in many cases, as semiconductors have evolved their ruggedness has diminished. the trend to produce smaller and faster devices, and the advent of mosfet and gallium arsenide fet technologies has led to an increased vulnerability. high impedance inputs and small junction sizes limit the ability of these devices to absorb energy and to conduct large currents. it is necessary, therefore, to supplement vulnerable electronic components with devices specially designed to cope with these hazards. listed below are the four primary philosophies for protecting against transients. ? clamping, or aclippingo is a method of limiting the amplitude of the transient. ? shunting provides a harmless path for the transient, usually to ground by way of an avalanche or a crowbar mechanism. ? interrupting opens the circuit for the duration of the transient. ? isolating provides a transient barrier between hostile environments and vulnerable circuits through the use of transformers or optoisolators. selection of the proper protective method should be made based upon a thorough investigation of the potential sources of the overvoltage hazard. different applications and environments present different sources of overvoltage. lightning at any given time there are about 1800 thunderstorms in progress around the world, with lightning striking about 100 times each second. in the u.s., lightning kills about 150 people each year and injures another 250. in flat terrain with an average lightning frequency, each 300 foot structure will be hit, on average, once per year. each 1200 foot structure, such as a radio or tv tower, will be hit 20 times each year, with strikes typically generating 600 million volts. each cloud-to-ground lightning flash really contains from three to five distinct strokes occurring at 60 ms intervals, with a peak current of some 20,000 amps for the first stroke and about half that for subsequent strokes. the final stroke may be followed by a continuing current of around 150 amps lasting for 100 ms. the rise time of these strokes has been measured at around 200 nanoseconds or faster. it is easy to see that the combination of 20,000 amps and 200 ns calculates to a value of di/dt of 10 11 amps per second! this large value means that transient protection circuits must use rf design techniques, particularly considerate of parasitic inductance and capacitance of conductors. while this peak energy is certainly impressive, it is really the longer-term continuing current which carries the bulk of the charge transferred between the cloud and ground. from various field measurements, a typical lightning model has been constructed, as shown in figure 1. figure 1. typical lightning model, with and without continuing current flash with continuing current flash with no continuing current 40 m s 60 60 time (ms) time (ms) 60 0.3 100 150 a
http://onsemi.com 384 depending on various conditions, continuing current may or may not be present in a lightning strike. a severe lightning model has also been created, which gives an indication of the strength which can be expected during worst case conditions at a point very near the strike location. figure 2 shows this model. note that continuing current is present at more than one interval, greatly exacerbating the damage which can be expected. a severe strike can be expected to ignite combustible materials. figure 2. severe lightning model 460 860 700 640 580 520 160 110 60 10 400 a 200 a time (ms) a direct hit by lightning is, of course, a dramatic event. in fact, the electric field strength of a lightning strike nearby may be enough to cause catastrophic or latent damage to semiconductor equipment. it is a more realistic venture to try to protect equipment from these nearby strikes than to expect survival from a direct hit. with this in mind, it is important to be able to quantify the induced voltage as a function of distance from the strike. figure 3 shows that these induced voltages can be quite high, explaining the destruction of equipment from relatively distant lightning flashes. figure 3. voltage induced by nearby lightning strike 10000 1000 100 10 1 10 1 0.1 distance from strike (km) induced voltage in 1 m of wire (v) burying cables does not provide appreciable protection as the earth is almost transparent to lightning radiated fields. in fact, underground wiring has a higher incidence of strikes than aerial cables. 3 sunspots the sun generates electromagnetic waves which can disrupt radio signals and increase disturbances on residential and business power lines. solar flares, which run in cycles of 11 years (1989 was a peak year) send out electromagnetic waves which disrupt sensitive equipment. although not quantified, the effects of sunspot activity should be considered. sunspots may be the cause of sporadic, and otherwise unexplainable problems in such sensitive areas. switching of loads in power circuits inductive switching transients occur when a reactive load, such as a motor or a solenoid coil, is switched off. the rapidly collapsing magnetic field induces a voltage across the load's winding which can be expressed by the formula: v = l (di/dt) where l is inductance in henrys and di/dt is the rate of change of current in amps per second. such transients can occur from a power failure or the normal opening of a switch. the energy associated with the transient is stored within the inductance at power interruption and is equal to: w = 1/2 l i 2 where w is energy in joules and i is instantaneous current in amps at the time of interruption. as an example, a 1.4 to 2.5 kv peak transient can be injected into a 120 vac power line when the ignition system of an oil furnace is fired. it has also been shown that there are transients present on these lines which can reach as high as 6 kv. in locations without transient protection devices, the maximum transient voltage is limited to about 6 kv by the insulation breakdown of the wiring. inductive switching transients are the silent killers of semiconductors as they often occur with no outward indication. a graphic example is the report of a large elevator company indicating the failure of 1000 volt rectifiers during a power interruption. in another area, power interruption to a 20 hp pump motor in a remote area was directly related to failure of sensitive monitoring equipment at that same site. 4
http://onsemi.com 385 figure 4. switching transient definition for aircraft and military buses, per boeing document d6-16050 28 vdc ba waveform at point a time ( m s) v t 1 t 2 v = 600 v pk-pk no. of repetitions = 5 to 100 t 1 = 0.2 to 10 m s t 2 = 50 to 1000 m s after characterizing electrical overstress on aircraft power buses, boeing published document d6-16050 as shown in figure 4. the military has developed switching transient definitions within several specifications including: dod-std-1399 for shipboard mil-std-704 for aircraft mil-std-1275 for ground vehicles the international electrotechnical commission (iec) is now promoting their specification iec 801-4 throughout the european community. this describes an inductive switching transient voltage threat having 50 ns wide spikes with amplitudes from 2 kv to 4 kv occurring in 300 ms wide bursts. 5 besides these particular military specifications, many are application specific and functional tests exist. a supplier of transient voltage suppressor components will be expected to perform to a wide variety of them. electrostatic discharge (esd) esd is a widely recognized hazard during shipping and handling of many semiconductor devices, especially those that contain unprotected mosfets, semiconductors for use at microwave frequencies and very high speed logic with switching times of 2 ns or less. in response to this threat, most semiconductors are routinely shipped in containers made of conductive material. in addition to various shipping precautions, electronic assembly line workers should be grounded, use grounded-tip soldering irons, ionized air blowers and other techniques to prevent large voltage potentials to be generated and possibly discharged into the semiconductors they are handling. once the assembled device is in normal operation, esd damage can still occur. any person shuffling his feet on a carpet and then touching a computer keyboard can possibly cause a software crash or, even worse, damage the keyboard electronics. the electrical waveform involved in esd is a brief pulse, with a rise time of about 1 ns, and a duration of 100 300 m s. the peak voltage can be as large as 30 kv in dry weather, but is more commonly 0.55.0 kv. 6 the fastest rise times occur from discharges originating at the tip of a hand-held tool, while dischar ges from the finger tip and the side of the hand are slightly slower. 7 a typical human with a body capacitance of 150 pf, charged to 3 microcoulombs, will develop a voltage potential of 20 kv, according to the formula: v = q / c where v is voltage, q is charge and c is capacitance. the energy delivered upon discharge is: w = 1/2 cv 2 where w is energy in joules, c is capacitance and v is voltage. it is interesting to note that most microcircuits can be destroyed by a 2500 volt pulse, but a person cannot feel a static spark of less than 3500 volts! nuclear electromagnetic pulses (nemp) when a nuclear weapon is detonated, a very large flux of photons (gamma rays) is produced. these rays act to produce an electromagnetic field known as a nuclear electromagnetic pulse or nemp. when a nuclear detonation occurs above the atmosphere, a particulary intense pulse illuminates all objects on the surface of the earth, and all objects in the lower atmosphere within line of sight of the burst. a burst 300500 km above kansas would illuminate the entire continental u.s. a typical nemp waveform is a pulse with a rise time of about 5 ns and a duration of about 1 m s. its peak electric field is 50100 kv/m at ground level. after such a pulse is coupled into spacecraft, aircraft and ground support equipment, it produces a waveform as described in mil-std-461c . the insidious effect of nemp is its broad coverage and its potential for disabling military defense systems. microwave radiation microwaves can be generated with such high power that they can disable electronic hardware upon which many military systems depend. a single pulse flux of 10 8 mj/cm 2 burns out receiver diodes, and a flux of 10 4 mj/cm 2 causes bit errors in unshielded computers. 8 with automobiles utilizing mpu controls in more applications, it is important to protect against the effects of driving by a microwave transmitter. likewise, a nearby lightning strike could also have detrimental effects to these systems. power cross yet another source of electrical overstress is the accidental connection of signal lines, such as telephone or cable television, to an ac or dc power line. strictly speaking, this phenomenon, known as a power cross, is a continuous state, not a transient. however, the techniques for ensuring the
http://onsemi.com 386 survival of signal electronics after a power cross are similar to techniques used for protection against transient overvoltages. standardized waveforms fortunately, measurements of these hazards have been studied and documented in several industry specifications. for example, bellcore technical advisory ta-tsy-000974 defines the generic measurement waveform for any double exponential waveform, which is the basis for most of the specific applications norms. the predominant waveform for induced lightning transients, set down by rural electrification administration document pe-60 , is shown in figure 5. this pulse test, performed at the conditions of 100 v/ m s rise, 10/1000 m s, ip = 1 kv, is one of the two most commonly specified in the industry. the other is the 8/20 m s waveform, shown in figure 6. figure 5. pulse waveform (10/1000 m s) figure 6. pulse waveform (8/20 m s) 30 20 10 0 lp .9 lp .5 lp .1 lp time, m s 12 3 .1 ip .5 ip .9 ip ip 0 time, ms transient voltage suppression and telecom transient voltage surge suppression components on data and telephone lines lines carrying data and telephone signals are subject to a number of unwanted and potentially damaging transients primarily from two sources: lightning and apower crosses.o a power cross is an accidental connection of a signal line to a powerline. transients from lightning can impress voltages well above a kilovolt on the line but are of short duration, usually under a millisecond. lightning transients are suppressed by using transient voltage surge suppressor (tvs) devices. tvs devices handle high peak currents while holding peak voltage below damaging levels, but have relatively low energy capability and cannot protect against a power cross fault. the first tvs used by telephone companies is the carbon block, but its peak let-through voltage was too high for modern equipment using unprotected solid state circuitry. a number of other components fill today's needs. the power cross condition causes a problem with telephone lines. fast acting fuses, high speed circuit breakers and positive temperature coefficient thermistors have been successfully used to limit or interrupt current surges exceeding a millisecond. over the years, telecommunications switching equipment has been transitioning from electromechanical relays to integrated circuits and mosfet technology. the newer equipment operates at minimal electrical currents and voltages, which make it very efficient. it is therefore quite sensitive to electrical overloads caused by lightning strikes and other transient voltage sources, and by power crosses. because of the deployment of new technology, both in new installations and in the refurbishment of older systems, the need for transient protection has grown rapidly. it is widely recognized that any new equipment must include protection devices for reasons of safety, reliability and long term economy. the major telecom companies, in their never ending quest for the elimination of electromechanical technology have been looking at a number of novel methods and implementations of protection. these methods provide for solutions to both the primary and secondary protection categories. a number of studies have been conducted to determine the transient environment on telephone lines. very little has been done with data lines because a typical situation does not exist. however, information gathered from telephone line studies can serve as a guide for data lines. past studies on telephone lines coupled with the high current capability of arc type arrestors and the conservative nature of engineers seem to have produced specifications which far exceed the real need. a recent study by bell south services 9 reported that the highest level of transient energy encountered was well below standards and specifications in common use. now, solid state devices perform adequately for many applications. however the stringent specifications of some regulatory agencies promote arc-type arrestors, though solid state devices would be a better choice. primary protection primary protection is necessary to protect against high voltage transients which occur in the outdoor environment. these transients include induced lightning surges and ac cross conditions. as such, primary protection is located at the point where wiring enters the building or terminal box. it is the first line defense against outside hazards. tvs devices located where lines enter a building are called primary protectors.
http://onsemi.com 387 protectors connected to indoor lines are referred to as secondary protectors. both primary and secondary protectors are required to provide complete equipment protection. today, primary protection is most generally accomplished through the use of surge protector modules. for telecom, these are designed specifically for the environment and the standards dictated by the telecom applications. they typically contain a two or three element gas arrestor tube and a mechanically-triggered heat coil. some also include air gap carbon block arrestors which break over at voltages above about 1500 volts. some modules contain high speed diodes for clamp response in the low nanoseconds. this provides protection until the gas tube fires, generally in about one microsecond. the diodes may be connected between the tip, ring and ground conductors in various combinations. the 5ess electronic switching system norms dictate design and performance requirements of tvs modules in use today. test methods are spelled out in rea pe-80 , a publication of the rural electrification administration. in the u.s. alone, 58 million primary protection modules are sold annually, about 40 million for central offices and 18 million for station locations, such as building entrances. eighty percent of these use gas tubes, 16% use air-gap carbon blocks, and only 2% (so far) are solid state. secondary protection secondary protection is necessary for the equipment inputs, and as such, is located between the primary protector and the equipment. secondary protection is generally accomplished with one or more tvs components, as opposed to the modules used for primary. it is often placed on a circuit board along with other components handling other duties, such as switching. secondary protection is applied to lines associated with long branch circuits which have primary protection a significant distance away, to internal data lines, and to other locations requiring additional local hazard-proofing. while not as open to external transients as the primary, secondary can still see peak open circuit voltages in excess of 1000 volts and short circuit currents of hundreds of amps. these transients may be locally generated, or they may be residuals from the primary protectors upstream. standards transient voltage waveforms are commonly described in terms of a dual exponential wave as defined in figure 7. the standard chosen for power lines is a 1.2/50 m s voltage wave which causes an 8/20 m s current wave. although the source of the most severe transients on telecom lines is the same as for power lines and lightning, the higher impedance per unit length of the telephone line stretches the waves as they propagate through the lines. figure 7. definition of double exponential impulse waveform p 0.9 p 0.5 p 0.1 p t 0 a b t 1 t 2 time waveform is defined as t r /t d where t r : front time = 1.25 (ba) = (t 1 t 0 ) t d : duration = (t 2 t 0 ) the 10/1000 m s wave approximates the worst case waveform observed on data and telecom lines. tvs devices intended for this service are usually rated and characterized using a 10/1000 waveform. the bell south study revealed that the worst transient energy handled by primary protectors on lines entering a central office was equivalent to only 27 a peak of a 10/1000 wave. this level is considerably less than that required by secondary protectors in most of the standards in use today. this finding is particularly significant because the bell south service area includes central florida, the region experiencing the highest lightning activity in the u.s. the united states federal communications commission (fcc) has defined mandatory requirements for equipment which is to be connected to the u.s. telephone network. in some cases, u.s. equipment must meet standards developed by the rural electrification agency (rea). many nations demand compliance to standards imposed by the consultative committee, international telegraph and telephone (ccitt). in addition, most equipment users demand safety certification from u.l., which has its own standards. the fcc standards are based on a worst case residue from a carbon block primary protector installed where the phone line enters the building. the ccitt standard is applicable for situations lacking primary protection, other than wiring flashover. companies entering the telephone equipment or protector market will need to obtain and become familiar with the appropriate governing standards. transient voltage protection components general tvs characteristics a number of transient voltage suppressor (tvs) devices are available. each finds use in various applications based upon performance and cost. all types are essentially transparent to the line until a transient occurs; however, some devices have significant capacitance which loads the line for ac signals. a few of the these are described in table 1. based upon their response to an overvoltage, tvs devices fit into two main categories, clamps and crowbars. a clamp conducts when its breakdown voltage is exceeded and reverts back to an open circuit when the applied voltage
http://onsemi.com 388 drops below breakdown. a crowbar switches into a low voltage, low impedance state when its breakover voltage is exceeded and restores only when the current flowing through it drops below a aholdingo level. clamp devices all clamp devices exhibit the general v-i characteristic of figure 8. there are variations; however, some clamps are asymmetric. in the non clamping direction, some devices such as the zener tvs exhibit the forward characteristic of a diode while others exhibit a very high breakdown voltage and are not intended to handle energy of areverseo polarity. under normal operating conditions, clamp devices appear virtually as an open circuit, although a small amount of leakage current is usually present. with increasing voltage a point is reached where current increases rapidly with voltage as shown by the curved portion of figure 8. the rapidly changing curved portion is called the aknee region.o further increases in current places operation in the abreakdowno region. figure 8. static characteristics of a clamp device 0 v i o in the knee region the v-i characteristic of clamping devices can be approximated by the equation: i = k vs (1) where k is a constant of proportionality and s is an exponent which defines the asharpness factoro of the knee. the exponent s is 1 for a resistor and varies from 5 to over 100 for the clamping devices being used in tvs applications. a high value of s i.e., a sharp knee, is beneficial. a tvs device can be chosen whose breakdown voltage is just above the worst case signal amplitude on the line without concern of loading the line or causing excessive dissipation in the tvs. as the current density in the clamp becomes high, the incremental resistance as described by equation 1 becomes very small in comparison to the bulk resistance of the material. the incremental resistance is therefore ohmic in the high current region. unfortunately, a uniform terminology for all tvs devices has not been developed; rather, the terms were developed in conjunction with the appearance of each device in the marketplace. the key characteristics normally specified define operation at voltages below the knee and at currents above the knee. leakage current is normally specified below the knee at a voltage variously referred to as the stand-off voltage, peak working voltage or rated dc voltage. some devices are rated in terms of an rms voltage, if they are bidirectional. normal signal levels must not exceed this working voltage if the device is to be transparent. breakdown voltage is normally specified at a fairly low current, typically 1 ma, which places operation past the knee region. worst case signal levels should not exceed the breakdown voltage to avoid the possibility of circuit malfunction or tvs destruction. the voltage in the high current region is called the clamping voltage, v c . it is usually specified at the maximum current rating for the device. to keep v c close to the breakdown voltage, s must be high and the bulk resistance low. a term called clamping factor, (f c ) is sometimes used to describe the sharpness of the breakdown characteristic. f c is the ratio of clamping voltage to the breakdown voltage. as the v-i characteristic curve of the tvs approaches a right angle, the clamping factor approaches unity. clamping factor is not often specified, but it is useful to describe clamp device behavior in general terms. table 1. comparison of tvs components type protection time protection voltage power dissipation reliable performance expected life other considerations gas tube > 1 m s 60100 v nil no limited only 502500 surges. can short power line. mov 1020 ns > 300 v nil no degrades fusing required. degrades. voltage level too high. avalanche tvs 50 ps 3400 v low yes long low power dissipation. bidirectional requires dual. thyristor tvs < 3 ns 30400 v nil yes long high capacitance. temperature sensitive.
http://onsemi.com 389 clamp devices generally react with high speed and as a result find applications over a wide frequency spectrum. no delay is associated with restoration to the off state after operation in the breakdown region. crowbar devices crowbar tvs devices have the general characteristics shown in figure 9. as with clamp devices, asymmetric crowbars are available which may show a diode forward characteristic or a high voltage breakdown in one direction. figure 9. static characteristics of a bidirectional crowbar device v d v 3 o 2 v t i 2 i 1 3 2 1 v 3 o 1 v t the major difference between a crowbar and a clamp is that, at some current in the breakdown region, the device switches to a low voltage on-state. in the clamping region from i 1 to i 2 , the slope of the curve may be positive as shown by segment 1, negative (segment 2) or exhibit both characteristics as shown by segment 3. a slightly positive slope is more desirable than the other two curves because a negative resistance usually causes a burst of high frequency oscillation which may cause malfunction in associated circuitry. however, a number of performance and manufacturing trade-offs affect the shape of the slope in the clamping region. a crowbar tvs has an important advantage over a clamp tvs in that it can handle much larger transient surge current densities because the voltage during the surge is considerably lower. in a telephone line application, for example, the clamping level must exceed the ring voltage peak and will typically be in the vicinity of 300 volts during a high current surge. the on-state level of the crowbar may be as low as 3 volts for some types which allows about two orders of magnitude increase in current density for the same peak power dissipation. however, a crowbar tvs becomes alatchedo in the on-state. in order to turn off its current flow the driving voltage must be reduced below a critical level called the holding or extinguishing level. consequently, in any application where the on-state level is below the normal system voltage, a follow-on current occurs. in a dc circuit crowbars will not turn off unless some means is provided to interrupt the current. in an ac application crowbars will turn off near the zero crossing of the ac signal, but a time delay is associated with turn-off which limits crowbars to relatively low frequency applications. in a data line or telecom application the turn-off delay causes a loss of intelligence after the transient surge has subsided. a telephone line has both ac and dc signals present. crowbars can be successfully used to protect telecom lines from high current surges. they must be carefully chosen to ensure that the minimum holding current is safely above the maximum dc current available from the lines. tvs devices a description of the various types of tvs devices follows in the chronological order in which they became available. used appropriately, sometimes in combination, any transient protection problem can be suitably resolved. their symbols are shown in figure 10. figure 10. tvs devices and their symbols air-gap carbon block 2- and 3-element gas tubes heat coil switch metal oxide varistor (mov) zener regulator unidirectional avalanche tvs de- vice bidirectional avalanche tvs device thyristor tvs devices dual thyristor tvs devices air gap arrestors the air gap is formed by a pair of metal points rigidly fixed at a precise distance. the air ionizes at a particular voltage depending upon the gap width between the points. as the air ionizes breakover occurs and the ionized air provides a low impedance conductive path between the points. the breakover threshold voltage is a function of the air's relative humidity; consequently, open air gaps are used mainly on high voltage power lines where precise performance is not necessary. for more predictable behavior, air gaps sealed in glass and metal packages are also available. because a finite time is required to ionize the air, the actual breakover voltage of the gap depends upon the rate of rise of the transient overvoltage. typically, an arrestor designed for a 120 v ac line breaks over at 2200 volts. air gaps handle high currents in the range of 10,000 amperes. unfortunately, the arc current pits the tips which causes the breakover voltage and on-state resistance to increase with usage.
http://onsemi.com 390 carbon block arrestors the carbon block arrestor, developed around the turn of the century to protect telephone circuits, is still in place in many older installations. the arrestor consists of two carbon block electrodes separated by a 3 to 4 mil air gap. the gap breaks over at a fairly high level approximately 1 kv and cannot be used as a sole protection element for modern telecom equipment. the voltage breakdown level is irregular. w ith use, the surface of the carbon block is burned which increases the unit's resistance. in addition, the burned material forms carbon tracks between the blocks causing a leakage current path which generates noise. consequently, many of the carbon blocks in service are being replaced by gas tubes and are seldom used in new installations. silicon carbide varistors the first non-linear resistor to be developed was called a avaristor.o it was made from specially processed silicon carbide and found wide use in high power, high voltage tvs applications. it is not used on telecom lines because its clamping factor is too high: s is only about 5. gas surge arrestors gas surge arrestors are a sophisticated modification of the air gap more suited to telecom circuit protection. most often used is the acommunicationo type gap which measures about 3/8 inch in diameter and 1/4 inch thick. a cross section is shown in figure 11. they consist of a glass or ceramic envelope filled with a low pressure inert gas with specialized electrodes at each end. most types contain a minute quantity of radioactive material to stabilize breakover voltage. otherwise, breakover is sensitive to the level of ambient light. because of their small size and fairly wide gap, capacitance is very low, only a few picofarads. when not activated, their off-state impedance or insulation resistance is virtually infinite. ????? ????? ????? ????? ????? ????? ????? ????? ????? ????? ????? ????? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? figure 11. gas arrestor cross section electrodes discharge region insulator (glass or ceramic material) activating compound ignition aid key electrical specifications for this tvs type include breakover voltage (dc & pulse), maximum holdover voltage, arc voltage, and maximum surge current. the breakover voltage is rated at a slow rate of rise, 5000 v/s, essentially dc to a gas arrestor. typical dc voltage ratings range from 75 v through 300 v to provide for most communication systems protection requirements. the maximum pulse voltage rating is that level at which the device fires and goes into conduction when subjected to a fairly rapid rate of voltage rise, (dv/dt) usually 100 v/ m s. maximum rated pulse voltages typically range from 400 v to 600 v, depending on device type. a typical waveform of a gas surge arrestor responding to a high voltage pulse is shown in figure 12. from the waveform, it can be seen that the dv/dt of the wave is 100 v/ m s and the peak voltage (the breakover voltage) is 520 v. figure 12. voltage waveform of gas surge arrestor responding to a surge voltage arrestor voltage (volts) time (500 ns/division) 0 200 400 600 0123 gas surge arrestors fire faster but firing voltage increases as the transient wave fronts increase in slope as illustrated in figure 13. the near vertical lines represent the incident transient rise time. note that the response time is greater than 0.1s at slow rise times but decreases to less than 0.1 m s for risetimes of 20 kv/ m s. however, the firing voltage has increased to greater than 1000 v for the gas tube which breaks over at 250 vdc. the driving circuit voltage must be below the holdover voltage for the gap to extinguish after the transient voltage has passed. holdover voltage levels are typically 60% to 70% of the rated dc breakdown voltage. arc voltage is the voltage across the device during conduction. it is typically specified at 5 to 10 v under a low current condition, but can exceed 30 v under maximum rated pulse current. the maximum surge current rating for a 8/20 m s waveform is typically in the 10 ka to 20 ka range for communication type devices. for repetitive surges with a 10/1000 wave, current ratings are typically 100 a, comfortably above the typical exposure levels in a telephone subscriber loop.
http://onsemi.com 391 1.2 1.0 0.8 0.6 0.4 0.2 0 1.4 87 65 43 21 110 response time (seconds) sparkover voltage (kv) 100 v/ s m 100 v/ms 100 v/sec figure 13. typical response time of a gas surge arrestor 470 vdc 350 vdc 250 vdc 150 vdc 500 v/s m 1kv/s m 5kv/s m 10kv/s m 20kv/s m gas tubes normally provide long life under typical operating conditions, however; wear-out does occur. wear-out is characterized by increased leakage current and firing voltage. an examination of gas tubes in service for six to eight years revealed that 15% were firing outside of their specified voltage limits. 9 because firing voltage increases with use, protectors often use an air gap backup in parallel with the gas tube. end-of-life is often specified by manufacturers as an increase of greater than 50% of breakover or firing voltage. other limits include a decrease in leakage resistance to less than 1 mw. the features and limitations of gas tube surge arrestors are listed below. advantages: ? high current capability ? low capacitance ? very high off-state impedance disadvantages: ? slow response time ? limited life ? high let-through voltage ? open circuit failure mode principally because of their high firing voltage, gas surge arrestors are not suitable for use as the sole element to protect modern equipment connected to a data or telecom line. however, they are often part of a protection network where they are used as the primary protector at the building interface with the outside world. selenium cells polycrystalline diodes formed from a combination of selenium and iron were the forerunners of monocrystalline semiconductor diodes. the tvs cells are built by depositing the polycrystalline material on a metal plate to increase their thermal mass thereby raising energy dissipation. the cells exhibit typical diode characteristics and a non-linear reverse breakdown which is useful for transient suppression. cells can be made which are aself-healingo; that is, the damage which occurs when subjecting them to excessive transient current is repaired with time. selenium cells are still used in high power ac line protection applications because of their self-healing characteristic; however, their high capacitance and poor clamping factor (s ? 8) rule them out for data or telecom line applications. metal oxide varistors the metal oxide varistor (mov) is composed of zinc oxide granules in a matrix of bismuth and other metal oxides. the interface between the zinc oxide and the matrix material exhibits characteristics similar to that of a p-n junction having a voltage breakdown of about 2.6 v. with this structure the electrical equivalent is that of groups of diodes in parallel which are stacked in series with similar parallel groups to provide the desired electrical parameters. the taller the stack, the higher the breakdown and operating voltage. larger cross-sections provide higher current capability. the structure of an mov is shown in figure 14. microvaristor zinc oxide intergranular figure 14. mov cross section
http://onsemi.com 392 mov (27 v) vert: 10 v/div horiz: 0.5 ms/div transient source impedance: 0.55 w v peak = 62.5 v figure 15. mov clamping voltage waveform movs, formed from a ceramic-like material, are usually produced in the shape of discs with most widely used movs having diameters of 7 mm, 14 mm, and 20 mm. the disc surfaces are coated with a highly conductive metal such as silver to assure uniform conduction through the cross sectional area of the device. after terminal attachment the parts are coated with a durable plastic material. the typical voltage spectrum of movs ranges from 8 v through 1000 v for individual elements. pulse current capability (8/20 m s) ranges from a few amperes to several thousands of amperes depending on the element's size. the v-i characteristic of movs is similar to figure 8. their clamping factor is fairly good; s is in the vicinity of 25. key electrical specifications include: operating voltage, breakdown voltage, peak current maximum clamping voltage, and leakage current. the maximum operating voltage specified is chosen to be below the breakdown voltage by a margin sufficient to produce negligible heating under normal operating conditions. breakdown voltage is the transition point at which a small increase in voltage results in a significant increase in current producing a clamping action. maximum limits for breakdown voltage are typically specified at 1 ma with upper end limits ranging from 20% to 40% greater than the minimum breakdown voltage. maximum peak current is a function of element area and ranges from tens of amperes to tens of thousands of amperes. movs are typically pulse rated with an 8/20 m s waveform since they are intended primarily for use across power lines. the clamping characteristics of a 27 v ac rated mov, with a 4 joule maximum pulse capability is shown in figure 15. the transient energy is derived from an exponentially decreasing pulse having a peak amplitude of 90 v. the pulse generator source impedance is 0.55 w. peak clamping voltage is 62.5 v while the developed current is 50 a. the clamping factor calculates to be 2.3. leakage currents are listed for movs intended for use in sensitive protection applications but are not normally listed for devices most often used on power lines. leakage current behavior is similar to that of a p-n junction. it roughly doubles for every 10 c increase in temperature and also shows an exponential dependence upon applied voltage. at a voltage of 80% of breakdown, leakage currents are several microamperes at a temperature of 50 c. although the theory of mov operation is not fully developed, behavior is similar to a bidirectional avalanche diode. consequently its response time is very fast. life expectancy is an important characteristic generated under pulse conditions. a typical example is shown in figure 16. the data applies to 20 mm diameter disc types having rated rms voltage from 130 v to 320 v. lifetime rating curves are usually given for each device family. impulse duration m s rated pulse current - amperes 10,000 5000 2000 1000 500 200 100 50 20 10 5 2 1 figure 16. mov pulse life curve 10,000 1000 100 20 indefinite 10 5 10 4 10 3 1 2 10 10 2 10 6 for a single 8/20 m s pulse, the device described in figure 16 is rated at 6500 a; however, it must be derated by more than two orders of magnitude for large numbers of pulses. longer duration pulses also require further derating. for example, for a 10/1000 m s duration pulse, this family of devices has a maximum pulse rating of about 100 a on a single shot basis and devices must be derated to less than 10a for long lifetimes in excess of 100,000 pulses.
http://onsemi.com 393 end-of-life for an mov is defined as the voltage breakdown degrading beyond the limits of 10%. as movs are pulsed, they degrade incrementally as granular interfaces are overheated and changed to a highly conductive state. failure occurs in power line applications when the breakdown voltage has degraded to the point where the mov attempts to clip the powerline peaks. in telecom applications, their breakdown must be above the peaks of the impressed ac line during a ring cycle or a power cross; otherwise an immediate catastrophic failure will occur. when movs fail catastrophically they initially fail short. however, if a source of high energy is present as might occur with a power cross, the follow-on current may cause the part to rupture resulting in an open circuit. the advantages and shortcomings of using an mov for general purpose protection in microprocessor based circuitry include the following: advantages : ? high current capability ? broad voltage spectrum ? broad current spectrum ? fast response ? short circuit failure mode disadvantages: ? gradual decrease of breakdown voltage ? high capacitance the capacitance of movs is fairly high because a large device is required in order to achieve a low clamping factor; consequently, they are seldom used across telecom lines. zener tvs zener tvs devices are constructed with large area silicon p-n junctions designed to operate in avalanche and handle much higher currents than their cousins, zener voltage regulator diodes. some manufacturers use small area mesa chips with metal heatsinks to achieve high peak power capability. however, on semiconductor has determined that large area planar die produce lower leakage current and clamping factor. the planar construction cross section is shown in figure 17 and several packages are shown in figure 18. figure 17. zener tvs cross-section plastic encapsulation planar die solder figure 18. typical insertion and surface mount silicon tvs packages e zeners and thyristors 59-03 17-02 41a 318-07 403a 403 key electrical parameters include maximum operating voltage, maximum reverse breakdown voltage, peak pulse current, peak clamping voltage, peak pulse power, and leakage current. the normal operating or working voltage is usually called the reverse standoff voltage in specification sheets. devices are generally available over the range of 5 v through 250 v. standoff voltage defines the maximum peak ac or dc voltage which the device can handle. standoff voltage is typically 10% to 15% below minimum reverse breakdown voltage. a listing of tvs products available from on semiconductor is shown in table 2. table 2. on semiconductor zener tvs series device series v z range pulse power rating (100/1000 pulse) package *sa5.0a- sa170a 6.8-200 500 w axial *p6ke6.8a - p6ke200a 6.8-200 600 w axial *1.5ke6.8a - 1.5ke250a 6.8-250 1500 w axial 1smb5.0at3 - 1smb170at3 6.8-200 600 w smb p6smb6.8at3 - p6smb200t3 6.8-200 600 w smb 1smc5.0at3 - 1smc78at3 6.8-91 1500 w smc 1.5smc6.8at3 1.5smc91at3 6.8-91 1500 w smc mmbz15vdlt1 15 esd protection >15 kv sot-23 * available in bidirectional configurations
http://onsemi.com 394 the reverse breakdown voltage is specified at a bias level at which the device begins to conduct in the avalanche mode. test current levels typically are 1 ma for diodes which breakdown above 10 v and 10 ma for lower voltage devices. softening of the breakdown knee, that is, lower s, for lower voltage p-n junction devices requires a higher test current for accurate measurements of reverse breakdown voltage. diodes that break down above 10 v display a very sharp knee; s is over 100. peak pulse current is the maximum upper limit at which the device is expected to survive. silicon p-n junctions are rated for constant power using a particular transient waveform; consequently, current is a function of the peak clamping voltage. for example, a 6.8 v device handles about 28 times the pulse current that a 220 v device will withstand; however, both the 6.8 v and 220 v types dissipate the same peak power under the same pulse waveform conditions. most zener tvs diodes are rated for 10/1000 m s waveform pulses which are common in the telecom industry. the clamping voltage waveform of a 27 v zener tvs having a 1.5 joule capability is illustrated in figure 19. its peak voltage is 30.2 v. the transient energy source is the same as applied to the mov whose response is shown in figure 10. however, the current through the zener tvs is over 100 a, much higher than occurs with the mov because the clamping voltage is significantly lower. despite the higher pulse current, the zener displays much better clamping action; its clamping factor is 1.1. figure 14 figure 19. zener tvs clamping voltage waveform time (500 m s/division) 0 10 20 30 40 50 60 v , clamping voltage (volts) c peak pulse power is the instantaneous power dissipated at the rated pulse condition. common peak pulse power ratings are 500 w, 600 w, and 1500 w for 10/1000 m s waveforms. as the pulse width decreases, the peak power capability increases in a logarithmic relationship. an example of a curve depicting peak pulse power versus pulse width is shown in figure 20. the graph applies to the 1.5 kw series (10/1000 pulse) of tvs diodes and can be interpolated to determine power ratings over a broad range of pulse widths. at 50 m s, the maximum rated power shown in the curve is 6 kw, which is four times greater than the rating at 1ms. the current handling capability is also increased roughly by this same factor of four. figure 20. peak pulse power rating for a popular zener tvs family 1 m s 10 m s 100 m s 1 ms 10 ms 100 10 1 t p , pulse width p p , peak power (kw) 0.1 m s to increase power capability devices are stacked in series. for example, doubling the power capability requirement for a 100 v, 1.5 kw zener tvs is easily done by placing two 50 v devices in series. clamping factor is not significantly affected by this arrangement. although leakage current limits are relatively high for the industry low voltage types (500 m a to 1000 m a), dropping off to 5 m a or less for voltages above 10 v, the planar die in use by on semiconductor exhibit considerably less leakage than the specified limits of the industry types. capacitance for the popular 1500 w family exceeds 10,000 pf at zero bias for a 6.8 v part, dropping exponentially to less than 100 pf for a 200 v device. capacitance drops exponentially with a linear increase in bias. the capacitance of a 6.8 v device is 7000 pf, while the 200 v part measures under 60 pf, at their respective standoff voltages. capacitance loads the signal line at high frequencies. for high speed data transmission circuits, low capacitance is achieved by placing two diodes in a series stack as shown in figure 21. under normal operation the top diode (d s ) operates at essentially zero bias current. since its power dissipation requirement is small, its area can be much smaller than that of the tvs diode (d z ) in order to provide low capacitance. the top diode normally is not intended to be used in avalanche. consequently if a negative voltage exceeding the reverse rating of the stack could occur, the low capacitance diode must be protected by another diode (d p ) shown connected by dotted lines on figure 21. the arrangement of figure 21 is satisfactory for situations where the signal on the line is always positive. when the signal is ac, diode d p is replaced by another low capacitance stack, connected in anti-parallel.
http://onsemi.com 395 d s d z d p figure 21. a series stack to achieve low capacitance with zener tvs diodes switching speed is a prime attribute of the zener tvs. avalanche action occurs in picoseconds but performing tests to substantiate the theory is extremely difficult. as a practical matter, the device may be regarded as responding instantaneously. voltage overshoots which may appear on protected lines are the result of poor layout and packaging or faulty measurement techniques. the p-n junction diode is a unidirectional device. for use on ac signal lines, bidirectional devices are available which are based upon stacking two diodes back to back. most manufacturers use monolithic npn and pnp structures. the center region is made relatively wide compared to a transistor base to minimize transistor action which can cause increased leakage current. no wearout mechanism exists for properly manufactured zener diode chips. they are normally in one of two states; good, or shorted out from over-stress. long-term life studies show no evidence of degradation of any electrical parameters prior to failure. failures result from stress which causes separation of the m etal heat sink from the silicon chip with subsequent overheating and then failure. like movs, silicon chips quickly fail short under steady state or long duration pulses which exceed their capabilities. the strengths and weaknesses of zener tvs devices are listed below. advantages: ? high repetitive pulse power ratings ? low clamping factor ? sub-nanosecond turn-on ? no wearout ? broad voltage spectrum ? short circuit failure mode disadvantages: ? low non-repetitive pulse current ? high capacitance for low voltage types because of their fast response and low clamping factor, silicon devices are used extensively for protecting microprocessor based equipment from voltage surges on dc power buses and i/o ports. thyristor diodes the most recent addition to the tvs arsenal is the thyristor surge suppressor (tss). the device has the low clamping factor and virtually instantaneous response characteristic of a silicon avalanche (zener) diode but, in addition, it switches to a low voltage on-state when sufficient avalanche current flows. because the on-state voltage is only a few volts, the tss can handle much higher currents than a silicon diode tvs having the same chip area and breakdown voltage. furthermore, the tss does not exhibit the large overshoot voltage of the gas tube. thyristor tvs diodes are available with unidirectional or bidirectional characteristics. the unidirectional type behaves somewhat like an scr with a zener diode connected from anode to gate. the bidirectional type behaves similarly to a triac having a bidirectional diode (diac) from main terminal to gate. packaged tss chips are shown in figure 18. figure 22a shows a typical positive switching resistance bidirectional tss chip. construction of the device starts with an n material wafer into which the p-bases and n-emitters are diffused. there are four layers from top to bottom on each side of the chip, forming an equivalent scr. only half the device conducts for a particular transient polarity.
http://onsemi.com 396 figure 22a. chip construction a k figure 22c. circuit model of left side a k p emitter n base n emitter p base figure 22b. cross section of left side mt1 mt2 figure 22d. circuit symbol the agateo does not trigger the scr, instead, operation in the zener mode begins when the collector junction avalanches. note that the p-bases pass through the n-emitters in a dot pattern and connect to the contact metal covering both halves of the chip. this construction technique provides a low resistance path for current flow and prevents it from turning on the npn transistor. therefore, at relatively low currents, the device acts like a low gain pnp transistor in breakdown. the zener diode is the collector base junction of the pnp transistor. negative resistance tss devices are similarly constructed but start with p-type material wafer, allowing the fabrication of a high-gain npn transistor. the switchback in voltage with increasing current is caused by the gain of the npn. both device types switch on completely when the current flow through the base emitter shunt resistance causes enough voltage drop to turn on the emitter and begin four layer action. now the device acts like an scr. the collector current of the pnp transistor (figure 22c) provides the base drive for the npn transistor. likewise, the collector current of the npn transistor drives the base of the pnp causing the two devices to hold one another on. both the p and n emitters flood the chip with carriers resulting in high electrical conductivity and surge current capability. when driven with high voltage ac, which occurs during a power cross, positive resistance tss devices act like a zener diode until the ac voltage drives the load line through the point where regeneration occurs. then it abruptly switches to a low voltage. when the peak ac current is just below the current required for breakover, the device operates mainly as a zener and power dissipation is high although the current is low. when the ac current peak is well above breakover, (>10 a), the device operates mainly as an scr, and the low on-state voltage causes power dissipation to be relatively low. negative resistance devices operate in a similar fashion. however, their behavior is dependent upon the aload line,o that is, the equivalent resistance which the device asees.o when the load resistance is high (>1000 w) behavior is similar to that of a positive resistance tss in that high
http://onsemi.com 397 instantaneous power dissipation occurs as the load line is driven along the high voltage region of the tss prior to switching. when a tss with a negative resistance characteristic is driven with a low aloado resistance, switching occurs when the load line is tangent to the peak of the negative resistance curve. thus, complete turn-on can occur at a very low current if the load resistance is low and the device has a asharpo switchback characteristic. leakage and the zener knee voltage increase with temperature at eight percent and 0.11% per c respectively for 200 v positive resistance types. but the current required to cause regeneration falls with temperature, causing less zener impedance contribution to the breakover voltage, resulting in a large reduction in the breakover voltage temperature coefficient to as little as 0.05%/ c. negative resistance types can show positive or negative breakover voltage coefficients depending on temperature and the sharpness of the negative switchback. the response of both positive and negative switching resistance units to fast transients involves a race between their zener and regenerative attributes. at first the device conducts only in the small chip area where breakdown is occurring. time is required for conduction to spread across the chip and to establish the currents and temperatures leading to complete turn-on. the net result is that both types exhibit increasing breakover voltage with fast transients. however, this effect is very small compared to gas discharge tubes, being less than 25% of the breakover voltage. negative resistance types are more sensitive to unwanted turn-on by voltage rates (dv/dt) at peak voltages below the avalanche value. the transient current that flows to charge the self-capacitance of the device sets up an operating point on the negative resistance slope leading to turn-on. reduction of dv/dt capability becomes significant when the signal voltage exceeds 80% of the avalanche value. complete turn-off following a transient requires the load line to intersect the device leakage characteristic at a point below the avalanche knee. during turn-off the load line must not meet an intermediate conducting state which can occur with a negative resistance device. positive resistance types are free of states causing turn-off asticking.o both types have temperature sensitive holding currents that lie between 1 and 4 ma/ c. recent product developments and published studies have generated much interest. based on a study sponsored by bell south, 9 the authors concluded that these new devices of fered the highest level of surge protection available. key electrical parameters for the thyristor tvs include operating voltage, clamping voltage, pulse current, on-state voltage, capacitance, and holding current. operating voltage is defined as the maximum normal voltage which the device should experience. operating voltages from 60 v to 200 v are available. clamping voltage is the maximum voltage level attained before thyristor turn-on and subsequent transition to the on-state conduction mode. the transition stage to conduction may have any of the slopes shown in figure 9. the important voltages which define the thyristor operating characteristics are also shown in figure 9. v d is operating voltage, v c is the clamping voltage and v t is on-state voltage. on-state voltage for most devices is approximately 3 v. consequently, transient power dissipation is much lower for the thyristor tvs than for other tvs devices because of its low on-state voltage. for example, under power cross conditions bell south services reported their tests showed that the thyristor tvs devices handled short bursts of commercial power with far less heating than arc type surge arrestors. 9 capacitance is also a key parameter since in many cases the tss is a replacement for gas surge arrestors which have low capacitance. values for the tss range from 100 pf to 200 pf at zero volts, but drop to about half of these values at a 50 vdc bias. holding current (i h ) is defined as the current required to maintain the on-state condition. device thru-current must drop below i h before it will restore to the non-conducting state. turn-off time is usually not specified but it can be expected to be several milliseconds in a telecom application where the dc follow-on current is just slightly below the holding current. the major advantages and limitations of the thyristor are: advantages : ? fast response ? no wearout ? produces no noise ? short circuit failure mode disadvantages : ? narrow voltage spectrum ? non-restoring in dc circuits unless current is below i h ? turn-off delay time the thyristor tvs is finding wide acceptance in telecom applications because its characteristics uniquely match telecom requirements. it handles the difficult apower crosso requirements with less stress than other tvs devices while providing the total protection needed. surge protector modules types of surge protector modules several component technologies have been implemented either singly or in combination in surge protector modules and devices. the simplest surge protectors contain nothing more than a single transient voltage suppression (tvs) component in a larger package. others contain two or more in a series, parallel or series-parallel arrangement. still others contain two or more varieties of tvs elements in combination, providing multiple levels of protection. many surge protectors contain non-semiconductor elements such as carbon blocks and varistors. if required,
http://onsemi.com 398 other modes of protection components may be incorporated, such as circuit breakers or emi noise filters. surge protector modules are one solution to the overvoltage problem. alternatives include: ? uninterruptible power systems (ups), whose main duty is to provide power during a blackout, but secondarily provide protection from surges, sags and spikes. ? power line conditioners, which are designed to isolate equipment from raw utility power and regulated voltages within narrow limits. both ups and power line conditioners are far more expensive than surge protector modules. the 6 major categories of surge protection modules plug-in hardwired utility datacom telecom rf and microwave plug-in modules plug-in modules come in a variety of sizes and shapes, and are intended for general purpose use. they permit the protection of vulnerable electronic equipment, such as home computers, from overvoltage transients on the 115 vac line. these products are sold in retail outlets, computer stores and via mail order. most models incorporate a circuit breaker or fuse, and an on/off switch with a neon indicator. the module may have any number of receptacles, with common models having from two to six. these products comply with ul 1449 , and are generally rated to withstand the application of multiple transients, as specified in ieee 587 . plug-in modules generally provide their protection through the use of these devices which are typically connected between line and neutral, and between neutral and ground. hardwired hardwired modules take on a wide variety of styles, depending upon their designed application. they provide protection for instrumentation, computers, automatic test equipment, industrial controls, motor controls, and for certain telecom situations. many of these modules provide snubbing networks employing resistors and capacitors to produce an rc time constant. snubbers provide common mode and differential mode low-pass filtering to reduce interference from line to equipment, and are effective in reducing equipment generated noise from being propogated onto the line. snubbers leak current however, and many of these modules are designed with heat sinks and require mounting to a chassis. the surge protection is performed in a similar manner to the plug-in modules mentioned earlier. hardwired products, therefore, present a prime opportunity for avalanche tvs components. utility the power transmission and distribution equipment industry has an obvious need for heavy duty protection against overvoltage transients. many utility situations require a combination of techniques to provide the necessary solution to their particular problems. this industry utilizes many forms of transient suppression outside the realm of semiconductors. datacom local area networks and other computer links require protection against high energy transients originating on their data lines. in addition, transients on adjacent power lines produce electromagnetic fields that can be coupled onto unprotected signal lines. datacom protectors have a ground terminal or pigtail which must be tied to the local equipment ground with as short a lead as possible. datacom protectors should be installed on both ends of a data link, or at all nodes in a network. this protection is in addition to the ac line transient protection, which is served by the plug-in or hardwired protection modules. some datacom protector modules contain multi-stage hybrid circuits, specially tailored for specific applications, such as 420 ma analog current loops. telecom included here are devices used to protect central office and station telecommunications (telecom) equipment against voltage surges. none of these devices are grounded through an ac power receptacle. those that are grounded through an ac power receptacle are categorized as plug-in modules. not only can overvoltages cause disruptions of telecom service, but they can destroy the sophisticated equipment connected to the network. also, users or technicians working on the equipment can be injured should lightning strike nearby. it is estimated that 10 to 15 people are killed in the u.s. each year while talking on the telephone during lightning storms. for these reasons, surge protectors are used both in central offices and in customer premises. there are three types of telecom surge protectors now in service: air-gap carbon block, gas tube, and solid state. the desire of the telecom market is to convert as many of the non-solid state implementations into solid state as cost will permit. selecting tvs components from the foregoing discussion it should be clear that the silicon junction avalanche diode offers more desirable characteristics than any other tvs component. its ability to clamp fast rising transients without overshoot, low clamping factor, non-latching behavior, and lack of a wearout mechanism are the overriding considerations. its one-shot surge capability is lower than most other tvs devices but is normally adequate for the application. should an unusually severe event occur, it will short yet still protect the equipment.
http://onsemi.com 399 for example, an rs-232 data line is specified to operate with a maximum signal level of 25 v. failure analysis studies 11 have shown that the transmitters and receivers used on rs-232 links tolerate 40 v transients. a 1.5ke27ca diode will handle the maximum signal level while holding the peak transient voltage to less than 40 v with a 40 a 10/1000 pulse which is adequate for all indoor and most outdoor data line runs. as a practical matter, few data links use 25 v signals; 5 v is most common. consequently, much lower voltage silicon diodes may be used which will allow a corresponding increase in surge current capability. for example, a 10 v breakdown device from the same 1500 w family will clamp to under 15 v (typically 12 v) when subjected to a 100 a pulse. telecommunications lines which must accommodate the ring voltage have much more severe requirements. for example, one specification 11 from bellcore suggests that leakage current be under 20 ma over the temperature range from 40 c to +65 c with 265 v peak ac applied. to meet this specification using zener tvs parts, devices must be stacked. devices which breakdown at 160 v are chosen to accommodate tolerances and the temperature coefficient. a part number with a 10% tolerance on breakdown could supply a unit which breaks down at 144 v. at 40 c breakdown could be 133 v. the breakdown of two devices stacked just barely exceeds the worst case ring peak of 265 v. a 1500 w unit has a surge capability of 6.5 a (10/1000) which is too low to be satisfactory while higher power units are too expensive as a rule. another problem which telephone line service presents to a surge suppressor is survival during a power cross. an avalanche diode is impractical to use because the energy delivered by a power cross will produce diode failure before any overcurrent protective element can react. as indicated by the bell south studies, the thyristor tvs is ideal for telephone line applications. suppliers offer unidirectional and bidirectional units which meet the fcc impulse wave requirements as shown in t able 1. in addition, the thyristor can handle several cycles of 50/60 hz power before failure. the on semiconductor mkt1v200 series, for example, can handle 10 a for 4 cycles, which is enough time for a low current fuse or other current activated protective device to react. application considerations in most cases, it is not advisable to place a zener tvs directly across a data line because of its relatively high capacitance. the arrangement previously discussed and shown in figure 21 works well for an unbalanced line such as rs-232. when using discrete steering diodes, they should have low capacitance and low turn-on impedance to avoid causing an overshoot on the clamped voltage level. most noise and transient surge voltages occur on lines with respect to ground. a signal line such as rs-232 which uses ground as a signal reference is thus very vulnerable to noise and transients. it is, however, easy to protect using a single tvs at each end of the line. telephone and rs-422 lines are called balanced lines because the signal is placed between two lines which are afloatingo with respect to ground. a signal appears between each signal line and ground but is rejected by the receiver; only the difference in potential between the two signal lines is recognized as the transmitted signal. this system has been in use for decades as a means of providing improved noise immunity, but protection from transient surge voltages is more complex. a cost-effective means of protecting a balanced line is shown in figure 23. the bridge diode arrangement allows protection against both positive and negative transients to be achieved, an essential requirement but the tvs devices z 1 and z 2 need only be unidirectional. the diodes are chosen to have low capacitance to reduce loading on the line and low turn-on impedance to avoid causing an overshoot on the clamped voltage level. although a zener tvs is shown, a tss is more appropriate when a telephone line having ring voltages is to be protected. d 2 d 1 d 3 d 4 z 2 z 1 figure 23. a method of reducing capacitance and protecting a balanced line since transients are usually common-mode, it is important that the tvs circuit operate in a balanced fashion; otherwise, common mode transients can cause differential mode disturbances which can be devastating to the line receiver. for example, suppose that an identical positive common mode surge voltage appears from each line-to-ground. diodes d 2 and d 4 will conduct the transients to z 2 . however, if one of these diodes has a slower turn-on or higher dynamic impedance than the other, the voltage difference caused by the differing diode response appears across the signal lines. consequently, the bridge diodes must be chosen to be as nearly identical as possible. should a differential mode transient appear on the signal lines, it will be held to twice that of the line-to-ground clamping level. in many cases a lower clamping level is needed which can be achieved by placing another tvs across the signal lines. it must be a bidirectional low
http://onsemi.com 400 capacitance device. with a line-to-line tvs in the circuit diode matching is not required. other schemes appearing in the literature use two bidirectional tvs devices from each line-to-ground as shown in figure 24 that of the line-to-ground voltage. to avoid generating a differential mode signal, the tvs must be closely matched or a third tvs must be placed line-to-line. by using a third tvs differential mode transients can be held to a low level. t 3 tip ring t 1 t 2 figure 24. protecting a balanced line with bidirectional tss devices the arrangement of figure 25 offers the advantage of lower capacitance when differential mode transient protection is required. if all three tss devices have the same capacitance (c), the line-to-line and line-to-ground capacitance of figure 24 is 1.5c. however, the arrangement of figure 25 exhibits a capacitance of only c/2. to design the circuit to handle the same simultaneous common mode energy as the circuit of figure 24, t 3 must be twice as large as t 1 and t 2 . in this case the capacitance of t 3 is doubled which causes the line-to-ground capacitance to be 2c/3, still a considerable improvement over the arrangement of figure 24. t 3 tip ring t 1 t 2 figure 25. preferred method of protecting a balanced line using bidirectional tss devices protectors are usually designed to be afail safeo if their energy ratings are exceeded, but the definition of afail safeo is often dependent upon the application. the most common requirement is that the surge voltage protective element should fail short and remain shorted regardless of the resulting current flow. to insure that this occurs, semiconductor devices use heavy gauge clips or bonding wires between the chip and terminals. in addition, parts are available in plastic packages having a spring type shorting bar which shorts the terminals when the package softens at the very high temperatures generated during a severe overload. the shorted tvs protects the equipment, but the line feeding it could be destroyed if the source of energy which shorted the tvs is from a power cross. therefore, it is wise and necessary for a ul listing to provide a series element such as a fuse or ptc device to either open the circuit or restrict its value to a safe level. the design of circuit boards is critical and layout must be done to minimize any lead or wiring inductance in series with the tvs. significant voltage is developed in any loop subject to transients because of their high current amplitudes and fast risetimes. references 1. d. w. bodle and p. a. gresh, alightning surges in paired telephone cable facilities,o the bell system technical journal, vol. 4, march 1961, pp. 547576. 2. d. g. stroh, astatic electricity can kill transistors,o electronics, vol. 35, 1962, pp. 9091. 3. j. d. norgard and c. l. chen, alightning-induced transients on buried shielded transmission lines,o ieee transactions on emc, vol. emc28, no. 3, august 1986, pp. 168171. 4. o. m. clark, atransient voltage suppression (tvs),o 1989, pp. 67. 5. clark, p. 7. 6. world information technologies, au. s. electrical and electronic surge protection markets,o 1989, p. 5. 7. t. j. tucker, aspark initiation requirements of a secondary explosive,o annals of the new york academy of sciences, vol. 152, article i, 1968, pp. 643653. 8. h. k. florig, athe future battlefield: a blast of gigawatts?,o ieee spectrum, vol. 25, no. 3, march 1988, pp. 5054. 9. mel thrasher, aa solid state solution,o telephony, june 1989, pp. 4852. 10. a. urbieta, asensitivity study to eos/ssd of bipolar integrated circuits,o eos-8, 1986. 11. m. tetreault and f.d. martzloff, acharacterization of disturbing transient waveforms on computer data communication lines,o emc proceedings, zurich, march 1985, pp. 423428. 12. f. martzloff, acoupling, propagation, and side effects of surges in an industrial building wiring system,o conference record of ieee ias meeting, 1988, pp. 14671475.
http://onsemi.com 401 important regulatory requirements and guidelines general dod-std-1399, mil-std-704, mil-std-1275, mil-std-461c. these military specifications are important, if we intend to target devices for military or commercial aviation markets. ieee 587. this specification describes multiple transient waveforms. ul1449. this is a compulsory test which demonstrates performance to criteria establishing the maximum voltage that can pass through a device after clamping has taken place. it is important that we comply, and say so on our data sheets. industrial ansi/ieee c62.41. established by the american national standards institute (ansi) and the institute of electrical and electronic engineers (ieee), this guideline tests the effectiveness of devices to typical power disturbances. to meet the most rigorous category of this spec, a device or module must be capable of withstanding a maximum repetitive surge current pulse of 3000 amps with a 8/20 m s waveform. iec tc 102 d. requirements for remote control receivers for industrial applications are detailed in this international electrotechnical commission (iec) document. iec 255-4 and iec tc 41. these documents describe testing for static relays for industrial use. iec 801-1 thru -3. these are specifications for various industrial control applications. iec 801-4. the iec specifies transient voltage impulses which occur from the switching of inductive loads. we must be aware of the importance of this specification, especially in europe, and characterize our devices' performance to it. ieee 472/ansi c 37.90.1. requirements for protective relays, including 10/1000 ns waveform testing is described. ul943. this requirement defines a 0.5 m s/100 khz waveform for ground fault and other switching applications. vde 0420. industrial remote control receivers are detailed, and test procedures defined. vde 0860/part 1/ii. this includes a description of 0.2/200 m s, 10kv test requirements. telecom ccitt ix k.17, k.20, k.15. these documents relate to repeaters. eia pm-1361. this document covers requirements for telephone terminals and data processing equipment. ftz 4391 tv1. this is a general german specification for telecom equipment. fcc part 68. the federal communications commission (fcc) requirements for communications equipment is defined. of special note is 68.302, dealing with telecom power lines. nt/das/prl/003. telephone instrument, subscriber equipment and line requirements are documented. ptt 692.01. this is a general swiss specification for telecom exchange equipment. rea pe-60. the rural electrification administration (rea) has documented the predominant waveform for induced lightning transients. this test is now commonly known as the 10/1000 m s pulse test. rea pe-80. the rea defines requirements for gas tubes and similar devices for telecom applications. ta-tsy-000974. this technical advisory by bellcore defines double exponential waveforms, which are the basis for many telecom applications norms. ul 1459 and ul 4978. these document detail tests for standard telephone equipment and data transmission. ta-tsy-000974. this technical advisory by bellcore defines double exponential waveforms, which are the basis for many telecom applications norms. ul 1459 and ul 4978. these document detail tests for standard telephone equipment and data transmission.
? semiconductor components industries, llc, 2001 march, 2001 rev.0 402 publication order number: an784/d an784/d transient power capability of zener diodes prepared by applications engineering and jerry wilhardt, product engineer e industrial and hi-rel zener diodes introduction because of the sensitivity of semiconductor components to voltage transients in excess of their ratings, circuits are often designed to inhibit voltage surges in order to protect equipment from catastrophic failure. external voltage transients are imposed on power lines as a result of lightning strikes, motors, solenoids, relays or scr switching circuits, which share the same ac source with other equipment. internal transients can be generated within a piece of equipment by rectifier reverse recovery transients, switching of loads or transformer primaries, fuse blowing, solenoids, etc. the basic relation, v = l di/dt, describes most equipment developed transients. zener diode characteristics zener diodes, being nearly ideal clippers (that is, they exhibit close to an infinite impedance below the clipping level and close to a short circuit above the clipping level), are often used to suppress transients. in this type of application, it is important to know the power capability of the zener for short pulse durations, since they are intolerant of excessive stress. some on semiconductor data sheets such as the ones for devices shown in table 1 contain short pulse surge capability. however, there are many data sheets that do not contain this data and figure 1 is presented here to supplement this information. table 1. transient suppressor diodes series numbers steady state power package description 1n4728 1 w do-41 double slug glass 1n6267 5 w case 41a axial lead plastic 1n5333a 5 w case 17 surmetic 40 1n746/957 a/4371 400 mw do-35 double slug glass 1n5221a 500 mw do-35 double slug glass some data sheets have surge information which differs slightly from the data shown in figure 1. a variety of reasons exist for this: 1. the surge data may be presented in terms of actual surge power instead of nominal power. 2. product improvements have occurred since the data sheet was published. figure 1. peak power ratings of zener diodes power is defined as v z(nom) x i z(pk) where v z(nom) is the nominal zener voltage measured at the low test current used for voltage classification. 1n6267 series glass do35 & glass do41 250 mw to 1 w types 5 watt types pulse width (ms) 0.1 100 0.01 0.02 p pk(nom) , nominal peak power (kw) 50 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.05 0.2 0.5 1 2 5 10 1 to 3 w types plastic do41 3. larger dice are used, or special tests are imposed on the product to guarantee higher ratings than those shown on figure 1. 4. the specifications may be based on a jedec registration or part number of another manufacturer. the data of figure 1 applies for non-repetitive conditions and at a lead temperature of 25 c. if the duty cycle increases, the peak power must be reduced as indicated by the curves of figure 2. average power must be derated as the lead or ambient temperature rises above 25 c. the average power derating curve normally given on data sheets may be normalized and used for this purpose. at first glance the derating curves of figure 2 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 m s pulse. however, when the derating factor for a given pulse of figure 2 is multiplied by the peak power value of figure 1 for the same pulse, the results follow the expected trend. http://onsemi.com application note
an784/d http://onsemi.com 403 when it is necessary to use a zener close to surge ratings, and a standard part having guaranteed surge limits is not suitable, a special part number may be created having a surge limit as part of the specification. contact your nearest on semiconductor oem sales office for capability, price, delivery, and minimum order criteria. mathematical model figure 2. typical derating factor for duty cycle 0.1 1 0.7 0.5 0.3 0.2 0.02 0.1 0.07 0.05 0.03 0.01 0.2 0.5 1 5 2 10 20 50 100 pulse width 10 ms 1 ms 100 m s 10 m s d, duty cycle (%) derating factor since the power shown on the curves is not the actual transient power measured, but is the product of the peak current measured and the nominal zener voltage measured at the current used for voltage classification, the peak current can be calculated from: i z(pk) = p (pk) v z(nom) (1) the peak voltage at peak current can be calculated from: (2) v z(pk) = f c v z(nom) where f c is the clamping factor. the clamping factor is approximately 1.20 for all zener diodes when operated at their pulse power limits. for example, a 5 watt, 20 volt zener can be expected to show a peak voltage of 24 volts regardless of whether it is handling 450 watts for 0.1 ms or 50 watts for 10 ms. this occurs because the voltage is a function of junction temperature and ir drop. heating of the junction is more severe at the longer pulse width, causing a higher voltage component due to temperature which is roughly offset by the smaller ir voltage component. for modeling purposes, an approximation of the zener resistance is needed. it is obtained from: r z(nom) = v z(nom) (f c -1) p pk(nom) /v z(nom) (3) the value is approximate because both the clamping factor and the actual resistance are a function of temperature. circuit considerations it is important that as much impedance as circuit constraints allow be placed in series with the zener diode and the components to be protected. the result will be a lower clipping voltage and less zener stress. a capacitor in parallel with the zener is also effective in reducing the stress imposed by very short duration transients. to illustrate use of the data, a common application will be analyzed. the transistor in figure 3 drives a 50 mh solenoid which requires 5 amperes of current. without some means of clamping the voltage from the inductor when the transistor turns off, it could be destroyed. figure 3. circuit example used to select a zener diode having the proper voltage and power capability to protect the transistor. 10 ms 2 s 26 vdc 50 mh, 5 w the means most often used to solve the problem is to connect an ordinary rectifier diode across the coil; however, this technique may keep the current circulating through the coil for too long a time. faster switching is achieved by allowing the voltage to rise to a level above the supply before being clamped. the voltage rating of the transistor is 60 v, indicating that approximately a 50 volt zener will be required. the peak current will equal the on-state transistor current (5 amperes) and will decay exponentially as determined by the coil l/r time constant (neglecting the zener impedance). a rectangular pulse of width l/r (0.01 sec) and amplitude of i pk (5 a) contains the same energy and may be used to select a zener diode. the nominal zener power rating therefore must exceed (5 a 50) = 250 watts at 10 ms and a duty cycle of 0.01/2 = 0.5%. from figure 2, the duty cycle factor is 0.62 making the single pulse power rating required equal to 250/0.62 = 403 watts. from figure 1, one of the 1n6267 series zeners has the required capability. the 1n6287 is specified nominally at 47 volts and should prove satisfactory. although this series has specified maximum voltage limits, equation 3 will be used to determine the maximum zener voltage in order to demonstrate its use. r z = 47(1.20 1) 500/47 9.4 10.64 == 0.9 w at 5 amperes, the peak voltage will be 4.5 volts above nominal or 51.5 volts total which is safely below the 60 volt transistor rating.
? semiconductor components industries, llc, 2001 march, 2001 rev.0 404 publication order number: an843/d an843/d a review of transients and their means of suppression prepared by steve cherniak applications engineering introduction one problem that most, if not all electronic equipment designers must deal with, is transient overvoltages. transients in electrical circuits result from the sudden release of previously stored energy. some transients may be voluntary and created in the circuit due to inductive switching, commutation voltage spikes, etc. and may be easily suppressed since their energy content is known and predictable. other transients may be created outside the circuit and then coupled into it. these can be caused by lightning, substation problems, or other such phenomena. these transients, unlike switching transients, are beyond the control of the circuit designer and are more difficult to identify, measure and suppress. effective transient suppression requires that the impulse energy is dissipated in the added suppressor at a low enough voltage so the capabilities of the circuit or device will not be exceeded. reoccurring transients transients may be formed from energy stored in circuit inductance and capacitance when electrical conditions in the circuit are abruptly changed. switching induced transients are a good example of this; the change in current di dt
in an inductor (l) will generate a voltage equal to l di dt . the energy (j) in the transient is equal to 1/2li 2 and usually exists as a high power impulse for a relatively short time (j = pt). if load 2 is shorted (figure 1), devices parallel to it may be destroyed. when the fuse opens and interrupts the fault current, the slightly inductive power supply produces a transient voltage spike of v l di dt with an energy content of j = 1/2li 2 . this transient might be beyond the voltage limitations of the rectifiers and/or load 1. switching out a high current load will have a similar effect. transformer primary being energized if a transformer is energized at the peak of the line voltage (figure 2), this voltage step function can couple to the stray capacitance and inductance of the secondary winding and generate an oscillating transient voltage whose oscillations depend on circuit inductance and capacitance. this transient's peak voltage can be up to twice the peak amplitude of the normal secondary voltage. in addition to the above phenomena the capacitively coupled (c s ) voltage spike has no direct relationship with the turns ratio, so it is possible for the secondary circuit to see the peak applied primary voltage. figure 1. load dump with inductive power supply power supply a b load 1 load 2 + - short across load 2 fuse v ab + 0 - http://onsemi.com application note
an843/d http://onsemi.com 405 figure 2. situation where transformer capacitance causes a transient + - + - v line peak should be 30% lighter c s switch closed v ab v ab load may have stray inductance or capacitance a b switch transformer primary being de-energized if the transformer is driving a high impedance load, transients of more than ten times normal voltage can be created at the secondary when the primary circuit of the transformer is opened during zero-voltage crossing of the ac line. this is due to the interruption of the transformer magnetizing current which causes a rapid collapse of the magnetic flux in the core. this, in turn, causes a high voltage transient to be coupled into the transformer's secondary winding (figure 3). transients produced by interrupting transformers magnetizing current can be severe. these transients can destroy a rectifier diode or filter capacitor if a low impedance discharge path is not provided. switch aarcingo when a contact type switch opens and tries to interrupt current in an inductive circuit, the inductance tries to keep current flowing by charging stray capacitances. (see figure 4.) figure 3. typical situation showing possible transient when interrupting transformer magnetizing current figure 4. transients caused by switch opening switch load ac line i m switch opened line voltage magnetizing current and flux secondary voltage v cap v line transient sensitive load line voltage
an843/d http://onsemi.com 406 this can also happen when the switch contacts bounce open after its initial closing. when the switch is opened (or bounces open momentarily) the current that the inductance wants to keep flowing will oscillate between the stray capacitance and the inductance. when the voltage due to the oscillation rises at the contacts, breakdown of the contact gap is possible, since the switch opens (or bounces open) relatively slowly compared to the oscillation frequency, and the distance may be small enough to permit aarcing.o the arc will discontinue at the zero current point of the oscillation, but as the oscillatory voltage builds up again and the contacts move further apart, each arc will occur at a higher voltage until the contacts are far enough apart to interrupt the current. waveshapes of surge voltages indoor waveshapes measurements in the field, laboratory, and theoretical calculations indicate that the majority of surge voltages in indoor low-voltage power systems have an oscillatory waveshape. this is because the voltage surge excites the natural resonant frequency of the indoor wiring system. in addition to being typically oscillatory, the surges can also have different amplitudes and waveshapes in the various places of the wiring system. the resonant frequency can range from about 5 khz to over 500 khz. a 100 khz frequency is a realistic value for a typical surge voltage for most residential and light industrial ac wire systems. the waveshape shown in figure 5 is known as an a0.5 m s 100 khz ring wave.o this waveshape is reasonably representative of indoor low-voltage (120 v 240 v) wiring system transients based on measurements conducted by several independent organizations. the waveshape is defined as rising from 10% to 90% of its final amplitude in 0.5 m s, then decays while oscillating at 100 khz, each peak being 60% of the preceding one. the fast rise portion of the waveform can induce the effects associated with non-linear voltage distribution in windings or cause dv/dt problems in semiconductors. shorter rise times can be found in transients but they are lengthened as they propagate into the wiring system or reflected from wiring discontinuities. figure 5. 0.5 m s 100 khz ring wave 0.9 v pk v pk t = 10 m s (f = 100 khz) 0.1 v pk 0.5 m s 60% of v pk the oscillating portion of the waveform produces voltage polarity reversal effects. some semiconductors are sensitive to polarity changes or can be damaged when forced into or out of conduction (i.e. reverse recovery of rectifier devices). the sensitivity of some semiconductors to the timing and polarity of a surge is one of the reasons for selecting this oscillatory waveform to represent actual conditions. outdoor locations both oscillating and unidirectional transients have been recorded in outdoor environments (service entrances and other places nearby). in these locations substantial energy is still available in the transient, so the waveform used to model transient conditions outside buildings must contain greater energy than one used to model indoor transient surges. properly selected surge suppressors have a good reputation of successful performance when chosen in conjunction with the waveforms described in figure 6. the recommended waveshape of 1.2 50 m s (1.2 m s is associated with the transients rise time and the 50 m s is the time it takes for the voltage to drop to 1/2v pk ) for the open circuit voltage and 8 20 m s for the short circuit current are as defined in ieee standard 28-ansi standard c62.1 and can be considered a realistic representation of an outdoor transients waveshape. figure 6. unidirectional wave shapes v 0.9 v pk 0.3 v pk 0.1 v pk v pk 0.5 v pk 50 m s t 1 t 1 1.67 = 1.2 m s i i pk 0.9 i pk 0.1 i pk 0.5 i pk t 2 20 m s t 2 1.25 = 8 m s (a) open-circuit voltage waveform (b) discharge current waveform
an843/d http://onsemi.com 407 the type of device under test determines which waveshape in figure 6 is more appropriate. the voltage waveform is normally used for insulation voltage withstand tests and the current waveform is usually used for discharge current tests. random transients the source powering the circuit or system is frequently the cause of transient induced problems or failures. these transients are difficult to deal with due to their nature; they are totally random and it is difficult to define their amplitude, duration and energy content. these transients are generally caused by switching parallel loads on the same branch of a power distribution system and can also be caused by lightning. ac power line transients transients on the ac power line range from just above normal voltage to several kv. the rate of occurrence of transients varies widely from one branch of a power distribution system to the next, although low-level transients occur more often than high-level surges. data from surge counters and other sources is the basis for the curves shown in figure 7. this data was taken from unprotected (no voltage limiting devices) circuits meaning that the transient voltage is limited only by the sparkover distance of the wires in the distribution system. figure 7. peak surge voltage versus surges per year* *eia paper, p587.1/f, may, 1979, page 10 20 10 5 4 0.7 0.2 0.1 0.5 0.3 9 8 7 6 1 3 2 0.9 0.8 0.4 0.6 0.01 1 0.1 10 100 1000 surges per year p e a k s u r g e v o l t a g e (kv) high exposure medium exposure low exposure
an843/d http://onsemi.com 408 the low exposure portion of the set of curves is data collected from systems with little load-switching activity that are located in areas of light lightning activity. medium exposure systems are in areas of frequent lightning activity with a severe switching transient problem. high exposure systems are rare systems supplied by long overhead lines which supply installations that have high sparkover clearances and may be subject to reflections at power line ends. when using figure 7 it is helpful to remember that peak transient voltages will be limited to approximately 6 kv in indoor locations due to the spacing between conductors using standard wiring practices. transient energy levels and source impedance the energy contained in a transient will be divided between the transient suppressor and the source impedance of the transient in a way that is determined by the two impedances. with a spark-gap type suppressor, the low impedance of the arc after breakdown forces most of the transient's energy to be dissipated elsewhere, e.g. in a current limiting resistor in series with the spark-gap and/or in the transient's source impedance. voltage clamping suppressors (e.g. zeners, mov's, rectifiers operating in the breakdown region) on the other hand absorb a large portion of the transient's surge energy. so it is necessary that a realistic assumption of the transient's source impedance be made in order to be able to select a device with an adequate surge capability. the 100 khz aring waveo shown in figure 5 is intended to represent a transient's waveshape across an open circuit. the waveshape will change when a load is connected and the amount of change will depend on the transient's source impedance. the surge suppressor must be able to withstand the current passed through it from the surge source. an assumption of too high a surge impedance (when testing the suppressor) will not subject the device under test to sufficient stresses, while an assumption of too low a surge impedance may subject it to an unrealistically large stress; there is a trade-off between the size (cost) of the suppressor and the amount of protection obtained. in a building, the transient's source impedance increases with the distance from the electrical service entrance, but open circuit voltages do not change very much throughout the structure since the wiring does not provide much attenuation. there are three categories of service locations that can represent the majority of locations from the electrical service entrance to the most remote wall outlet. these are listed below. table 1 is intended as an aid for the preliminary selection of surge suppression devices, since it is very difficult to select a specific value of source impedance. category i: outlets and circuits a along distanceo from electrical service entrance. outlets more than 10 meters from category ii or more than 20 meters from category iii (wire gauge #14 #10) category ii: major bus lines and circuits a ashort distanceo from electrical service entrance. bus system in industrial plants. outlets for heavy duty appliances that are acloseo to the service entrance. distribution panel devices. commercial building lighting systems. category iii. electrical service entrance and outdoor locations. power line between pole and electrical service entrance. power line between distribution panel and meter. power line connection to additional near-by buildings. underground power lines leading to pumps, filters, etc. categories i and ii in table 1 correspond to the extreme range of the amedium exposureo curve in figure 7. the surge voltage is limited to approximately 6 kv due to the sparkover spacing of indoor wiring. the discharge currents of category ii were obtained from simulated lightning tests and field experience with suppressor performance. the surge currents in category i are less than in category ii because of the increase in surge impedance due to the fact that category i is further away from the service entrance. category iii can be compared to the ahigh exposureo situation in figure 7. the limiting effect of sparkover is not available here so the transient voltage can be quite large. table 1. surge voltages and currents deemed to represent the indoor environment depending upon location energy (joules) dissipated in a suppressor with a clamping voltage of (3) category waveform surge voltage (1) surge current (2) 250 v 500 v 1000 v i 0.5 m s 100 khz ring wave 6 kv 200 a 0.4 0.8 1.6 ii 0.5 m s 100 khz ring wave 6 kv 500 a 1 2 4 1.2 50 m s 8 20 m s 6 kv 3 ka 20 40 80 iii 1.2 50 m s 8 20 m s 10 kv or more 10 ka or more notes: 1. open circuit voltage notes: 2. discharge current of the surge (not the short circuit current of the power system) notes: 3. the energy a suppressor will dissipate varies in proportion with the suppressor's clamping voltage, which can be different w ith different system voltages (assuming the same notes: 3. discharge current).
an843/d http://onsemi.com 409 lightning transients there are several mechanisms in which lightning can produce surge voltages on power distribution lines. one of them is a direct lightning strike to a primary (before the substation) circuit. when this high current, that is injected into the power line, flows through ground resistance and the surge impedance of the conductors, very large transient voltages will be produced. if the lightning misses the primary power line but hits a nearby object the lightning discharge may also induce large voltage transients on the line. when a primary circuit surge arrester operates and limits the primary voltage the rapid dv/dt produced will effectively couple transients to the secondary circuit through the capacitance of the transformer (substation) windings in addition to those coupled into the secondary circuit by normal transformer action. if lightning struck the secondary circuit directly, very high currents may be involved which would exceed the capability of conventional surge suppressors. lightning ground current flow resulting from nearby direct to ground discharges can couple onto the common ground impedance paths of the grounding networks also causing transients. automotive transients transients in the automotive environment can range from the noise generated by the ignition system and the various accessories (radio, power window, etc.) to the potentially destructive high energy transients caused by the charging (alternator/regulator) system. the automotive aload dumpo can cause the most destructive transients; it is when the battery becomes disconnected from the charging system during high charging rates. this is not unlikely when one considers bad battery connections due to corrosion or other wiring problems. other problems can exist such as steady state overvoltages caused by regulator failure or 24 v battery jump starts. there is even the possibility of incorrect battery connection (reverse polarity). capacitive and/or inductive coupling in wire harnesses as well as conductive coupling (common ground) can transmit these transients to the inputs and outputs of automotive electronics. the society of automotive engineers (sae) documented a table describing automotive transients (see table 2) which is useful when trying to provide transient protection. considerable variation has been observed while gathering data on automobile transients. all automobiles have their electrical systems set up differently and it is not the intent of this paper to suggest a protection level that is required. there will always be a trade-off between cost of the suppressor and the level of protection obtained. the concept of one master suppressor placed on the main power lines is the most cost-effective scheme possible since individual suppressors at the various electronic devices will each have to suppress the largest transient that is likely to appear (load dump), hence each individual suppressor would have to be the same size as the one master suppressor since it is unlikely for several suppressors to share the transient discharge. table 2. typical transients encountered in the automotive environment length of transient cause energy capability voltage amplitude possible frequency of application steady state failed voltage regulator booster starts with 24 v battery load dump e i.e., disconnection of battery during high charging rates inductive load switching transient alternator field decay ignition pulse disconnected battery mutual coupling in harness ignition pulse normal accessory noise transceiver feedback 5 minutes 4.5100 ms 0.32 s 0.2 s 90 ms 1 ms 15 m s +18 v infrequent 24 v 10 j 125 v infrequent infrequent < 1 j 300 v to +80 v often < 1 j 100 v to 40 v each turn-off 500 hz several times in vehicle life < 0.5 j 75 v < 1 j 200 v < 0.001 j 3 v 1.5 v 20 mv often 3 500 hz continuous 50 hz to 10 khz r.f.
an843/d http://onsemi.com 410 there will, of course, be instances where a need for individual suppressors at the individual accessories will be required, depending on the particular wiring system or situation. transient suppressor types carbon block spark gap this is the oldest and most commonly used transient suppressor in power distribution and telecommunication systems. the device consists of two carbon block electrodes separated by an air gap, usually 3 to 4 mils apart. one electrode is connected to the system ground and the other to the signal cable conductor. when a transient over-voltage appears, its energy is dissipated in the arc that forms between the two electrodes, a resistor in series with the gap, and also in the transient's source impedance, which depends on conductor length, material and other parameters. the carbon block gap is a fairly inexpensive suppressor but it has some serious problems. one is that it has a relatively short service life and the other is that there are large variations in its arcing voltage. this is the major problem since a nominal 3 mil gap will arc anywhere from 300 to 1000 volts. this arcing voltage variation limits its use mainly to primary transient suppression with more accurate suppressors to keep transient voltages below an acceptable level. gas tubes the gas tube is another common transient suppressor, especially in telecommunication systems. it is made of two metallic conductors usually separated by 10 to 15 mils encapsulated in a glass envelope which is filled with several gases at low pressure. gas tubes have a higher current carrying capability and longer life than carbon block gaps. the possibility of seal leakage and the resultant of loss protection has limited the use of these devices. selenium rectifiers selenium transient suppressors are selenium rectifiers used in the reverse breakdown mode to clamp voltage transients. some of these devices have self-healing properties which allows the device to survive energy discharges greater than their maximum capability for a limited number of surges. selenium rectifiers do not have the voltage clamping capability of zener diodes. this is causing their usage to become more and more limited. metal oxide varistors (mov's) an mov is a non-linear resistor which is voltage dependent and has electrical characteristics similar to back-to-back zener diodes. as its name implies it is made up of metal oxides, mostly zinc oxide with other oxides added to control electrical characteristics. mov characteristics are compared to back-to-back zeners in photos 2 through 7. when constructing mov's the metal oxides are sintered at high temperatures to produce a polycrystalline structure of conductive zinc oxide separated by highly resistive intergranular boundaries. these boundaries are the source of the mov's non-linear electrical behavior. mov electrical characteristics are mainly controlled by the physical dimensions of the polycrystalline structure since conduction occurs between the zinc oxide grains and the intergranular boundaries which are distributed throughout the bulk of the device. the mov polycrystalline body is usually formed into the shape of a disc. the energy rating is determined by the device's volume, voltage rating by its thickness, and current handling capability by its area. since the energy dissipated in the device is spread throughout its entire metal oxide volume, mov's are well suited for single shot high power transient suppression applications where good clamping capability is not required. the major disadvantages with using mov's are that they can only dissipate relatively small amounts of average power and are not suitable for many repetitive applications. another drawback with mov's is that their voltage clamping capability is not as good as zeners, and is insufficient in many applications. perhaps the major difficulty with mov's is that they have a limited life time even when used below their maximum ratings. for example, a particular mov with a peak current handling capability of 1000 a has a lifetime of about 1 surge at 1000 a pk , 100 surges at 100 a pk and approximately 1000 surges at 65 a pk . transient suppression using zeners zener diodes exhibit a very high impedance below the zener voltage (v z ), and a very low impedance above v z . because of these excellent clipping characteristics, the zener diode is often used to suppress transients. zeners are intolerant of excessive stress so it is important to know the power handling capability for short pulse durations. most zeners handle less than their rated power during normal applications and are designed to operate most effectively at this low level. zener transient suppressors such as the on semiconductor 1n6267 mosorb series are designed to take large, short duration power pulses. this is accomplished by enlarging the chip and the effective junction area to withstand the high energy surges. the package size is usually kept as small as possible to provide space efficiency in the circuit layout, and since the package does not differ greatly from other standard zener packages, the steady state power dissipation does not differ greatly. some data sheets contain information on short pulse surge capability. when this information is not available for on semiconductor devices, figure 8 can be used. this data applies for non-repetitive conditions with a lead temperature of 25 c. it is necessary to determine the pulse width and peak power of the transient being suppressed when using figure 8. this can be done by taking whatever waveform
an843/d http://onsemi.com 411 the transient is and approximating it with a rectangular pulse with the same peak power. for example, an exponential discharge with a 1 ms time constant can be approximated by a rectangular pulse 1 ms wide that has the same peak power as the transient. this would be a better approximation than a rectangular pulse 10 ms wide with a correspondingly lower amplitude. this is because the heating effects of different pulse width lengths affect the power handling capability, as can be seen by figure 8. this also represents a conservative approach because the exponential discharge will contain 1/2 the energy of a rectangular pulse with the same pulse width and amplitude. figure 8. peak power ratings of zener diodes 1n6267 series glass do35 & glass do41 250 mw to 1 w types 5 watt types pulse width (ms) 0.1 100 0.01 0.02 p pk(nom) , nominal peak power (kw) 50 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.05 0.2 0.5 1 2 5 10 1 to 3 w types plastic do41 when used in repetitive applications, the peak power must be reduced as indicated by the curves of figure 9. average power must be derated as the lead or ambient temperature exceeds 25 c. the power derating curve normally given on data sheets can be normalized and used for this purpose. figure 9. typical derating factor for duty cycle 0.1 1 0.7 0.5 0.3 0.2 0.02 0.1 0.07 0.05 0.03 0.01 0.2 0.5 1 5 2 10 20 50 pulse width 10 ms 1 ms 100 m s 10 m s d, duty cycle (%) derating factor the peak zener voltage during the peak current of the transient being suppressed can be related to the nominal zener voltage (eqtn 1) by the clamping factor (f c ). eqtn 1: v z(pk) = f c (v z(nom) ) unless otherwise specified f c is approximately 1.20 for zener diodes when operated at their pulse power limits. for example, a 5 watt, 20 volt zener can be expected to show a peak voltage of 24 volts regardless of whether it is handling 450 watts for 0.1 ms or 50 watts for 10 ms. (see figure 8.) this occurs because the zener voltage is a function of both junction temperature and ir drop. longer pulse widths cause a greater junction temperature rise than short ones; the increase in junction temperature slightly increases the zener voltage. this increase in zener voltage due to heating is roughly offset by the fact that longer pulse widths of identical energy content have lower peak currents. this results in a lower ir drop (zener voltage drop) keeping the clamping factor relatively constant with various pulse widths of identical energy content. an approximation of zener impedance is also helpful in the design of transient protection circuits. the value of r z(nom) (eqtn 2) is approximate because both the clamping factor and the actual resistance is a function of temperature. eqtn 2: r z(nom) = v 2 z(nom) (f c 1) p pk(nom) v z(nom) = nominal zener voltage p pk(nom) = found from figure 8 when device type and pulse width are known. for example, from figure 8 a 1n6267 zener suppressor has a p pk(nom) of 1.5 kw at a pulse width of 1 ms. as seen from equation 2, zeners with a larger p pk(nom) capability will have a lower r z(nom) . zener versus mov tradeoffs the clamping characteristics of zeners and mov's are best compared by measuring their voltages under transient conditions. photos 1 through 9 are the result of an experiment that was done to compare the clamping characteristics of a zener (on semiconductor 1n6281, approximately 1.5j capability) with those of an mov (g.e. v27za4, 4j capability); both are 27 v devices. photo 1 shows the pulse generator output voltage. this generator synthesizes a transient pulse that is characteristic of those that may appear in the real world. photos 2 and 3 are clamping voltages of the mov and zener, respectively with a surge source impedance of 500 w . photos 4 and 5 are the clamping voltages with a surge source impedance of 50 w . photos 6 and 7 simulate a condition where the surge source impedance is 5 w . photos 8 and 9 show a surge source impedance of 0.55 w , which is at the limits of the zener suppressor's capability.
an843/d http://onsemi.com 412 photo 1 open circuit transient pulse vert: 20 v/div horiz: 0.5 ms/div v peak = 90 v photo 2 mov (27 v) vert: 10 v/div horiz: 0.5 ms/div transient source impedance: 500 w v peak = 39.9 v 0 % 10 0 9 0 1 0 0 % 10 0 9 0 1 0
an843/d http://onsemi.com 413 photo 3 zener (27 v) vert: 10 v/div horiz: 0.5 ms/div transient source impedance: 500 w v peak = 27 v photo 4 mov (27 v) vert: 10 v/div horiz: 0.5 ms/div transient source impedance: 50 w v peak = 44.7 v photo 5 zener (27 v) vert: 10 v/div horiz: 0.5 ms/div transient source impedance: 50 w v peak = 27 v 0 % 10 0 9 0 1 0 0 % 10 0 9 0 1 0 0 % 10 0 9 0 1 0
an843/d http://onsemi.com 414 photo 6 mov (27 v) vert: 10 v/div horiz: 0.5 ms/div transient source impedance: 5 w v peak = 52 v photo 7 zener (27 v) vert: 10 v/div horiz: 0.5 ms/div transient source impedance: 5 w v peak = 28 v photo 8 mov (27 v) vert: 10 v/div horiz: 0.5 ms/div transient source impedance: 0.55 w v peak = 62.5 v 0 % 10 0 9 0 1 0 0 % 10 0 9 0 1 0
an843/d http://onsemi.com 415 photo 9 zener (27 v) vert: 10 v/div horiz: 0.5 ms/div transient source impedance: 0.55 w v peak : 30.2 v peak power: approx 2000 w peak (the limit of this device's capability) as can be seen by the photographs, the zener suppressor has significantly better voltage clamping characteristics than the mov even though that particular zener has less than one-fourth the energy capability of the mov it was compared with. however, the energy rating can be misleading because it is based on the clamp voltage times the surge current, and when using an mov, the high impedance results in a fairly high clamp voltage. the major tradeoff with using a zener type suppressor is its cost versus power handling capability, but since it would take an aoversizedo mov to clamp voltages (suppress transients) as well as the zener, the mov begins to lose its cost advantage. if a transient should come along that exceeds the capabilities of the particular zener, or mov, suppressor that was chosen, the load will still be protected, since they both fail short. the theoretical reaction time for zeners is in the picosecond range, but this is slowed down somewhat with lead and package inductance. the 1n6267 mosorb series of transient suppressors have a typical response time of less than one nanosecond. for very fast rising transients it is important to minimize external inductances (due to wiring, etc.) which will minimize overshoot. connecting zeners in a back-to-back arrangement will enable bidirectional voltage clamping characteristics. (see figure 10.) if zeners a and b are the same voltage, a transient of either polarity will be clamped at approximately that voltage since one zener will be in reverse bias mode while the other will be in the forward bias mode. when clamping low voltage it may be necessary to consider the forward drop of the forward biased zener. the typical protection circuit is shown in figure 11a. in almost every application, the transient suppression device is placed in parallel with the load, or component to be protected. since the main purpose of the circuit is to clamp the voltage appearing across the load, the suppressor should be placed as close to the load as possible to minimize overshoot due to wiring (or any inductive) effect. (see figure 11b.) figure 10. zener arrangement for bidirectional clamping figure 11a. using zener to protect load against transients ??? ??? or b a v in z in b a load v l figure 11b. overshoot due to inductive effect zener voltage peak voltage due to overshoot transient input
an843/d http://onsemi.com 416 zener capacitance prior to breakdown is quite small (for example, the 1n6281 27 volt mosorb has a typical capacitance of 800 pf). capacitance this small is desirable in the off-state since it will not attenuate wide-band signals. when the zener is in the breakdown mode of operation (e.g. when suppressing a transient) its effective capacitance increases drastically from what it was in the off-state. this makes the zener ideal for parallel protection schemes since, during transient suppression, its large effective capacitance will tend to hold the voltage across the protected element constant; while in the off-state (normal conditions, no transient present), its low off-state capacitance will not attenuate high frequency signals. input impedance (z in ) always exists due to wiring and transient source impedance, but z in should be increased as much as possible with an external resistor, if circuit constraints allow. this will minimize zener stress. conclusion the reliable use of semiconductor devices requires that the circuit designer consider the possibility of transient overvoltages destroying these transient-sensitive components. these transients may be generated by normal circuit operations such as inductive switching circuits, energizing and deenergizing transformer primaries, etc. they do not present much of a problem since their energy content, duration and effect may easily be obtained and dealt with. random transients found on power lines, or lightning transients, present a greater threat to electronic components since there is no way to be sure when or how severe they will be. general guidelines were discussed to aid the circuit designer in deciding what size (capability and cost) suppressor to choose for a certain level of protection. there will always be a tradeoff between suppressor price and protection obtained. several different suppression devices were discussed with emphasis on zeners and mov's, since these are the most popular devices to use in most applications. references 1. ge transient voltage suppression manual, 2nd edition. 2. on semiconductor zener diode manual.
http://onsemi.com 417 design considerations and performance of on semiconductor temperature-compensated zener (reference) diodes prepared by zener diode engineering and ronald n. racino reliability and quality assurance introduction this application note defines on semiconductor temperature-compensated zener (reference) diodes, explains the device characteristics, describes electrical testing, and discusses the advanced concepts of device reliability and quality assurance. it is a valuable aid to those who contemplate designing circuits requiring the use of these devices. zener diodes fall into three general classifications: regulator diodes, reference diodes and transient voltage suppressors. regulator diodes are normally employed in power supplies where a nearly constant dc output voltage is required despite relatively large changes in input voltage or load resistance. such devices are available with a wide range of voltage and power ratings, making them suitable for a wide variety of electronic equipments. regulator diodes, however, have one limitation: they are temperature-sensitive. therefore, in applications in which the output voltage must remain within narrow limits during input-voltage, load-current, and temperature changes, a temperature-compensated regulator diode, called a reference diode, is required. the reference diode is made possible by taking advantage of the differing thermal characteristics of forward- and reverse-biased silicon p-n junctions. a forward-biased junction has a negative temperature coefficient of approximately 2 mv/ c, while reverse-biased junctions have positive temperature coefficients ranging from about 2 mv/ c at 5.5 v to 6 mv/ c at 10 v. therefore it is possible, by judicious combination of forward- and reverse-biased junctions, to fabricate a device with a very low overall temperature coefficient (figure 1). the principle of temperature compensation is further illustrated in figure 2, which shows the voltage-current characteristics at two temperature points (25 and 100 c) for both a forward- and a reverse-biased junction. the diagram shows that, at the specified test current (i zt ), the absolute value of voltage change ( d v) for the temperature change between 25 and 100 c is the same for both junctions. therefore, the total voltage across the combination of these two junctions is also the same at these temperature points, since one d v is negative and the other is positive. however, the rate of voltage change with temperature over the figure 1. temperature compensation of a 6.2 volt reference diode (1n821 series) diode voltage drop (v) (referenced to i zt = 7.5 ma) 6.4 6.2 6 5.8 5.6 5.4 0.8 0.6 0.4 0.2 0 -75 -50 -25 0 +25 +50 +75 +100 temperature ( c) 6.2 - volt reference diode (combination of zener and forward dice) zener die forwardbiased compensating die temperature range defined by these points is not necessarily the same for both junctions, thus the temperature compensation may not be linear over the entire range. figure 2 also indicates that the voltage changes of the two junctions are equal and opposite only at the specified test current. for any other value of current, the temperature compensation may not be complete.
http://onsemi.com 418 figure 2. temperature compensation of p-n junctions direction of current flow package outline 25 c 100 c v f + i i zt - d v + d v 25 c v r i 100 c i zt - forwardbiased pn junction reversebiased zener junction important electrical characteristics of reference diodes the three most important characteristics of reference diodes are 1) reference voltage, 2) voltage-temperature stability, and 3) voltage-time stability. 1. reference v oltage. this characteristic is defined as the voltage drop measured across the diode when the specified test current passes through it in the zener direction. it is also called the zener voltage (v z , figure 3). on the data sheets, the reference voltage is given as a nominal voltage for each family of reference diodes. the nominal voltages are normally specified to a tolerance of 5%, but devices with tighter tolerances, such as 2% and 1%, are available on special order. 2. voltage-temperature stability. the temperature stability of zener voltage is sometimes expressed by means of the temperature coefficient. this parameter is usually defined as the percent voltage change across the device per degree centigrade. this method of indicating voltage stability accurately reflects the voltage deviation at the test temperature extremes but not necessarily at other points within the specified temperature range. this fact is due to variations in the rate of voltage change with temperature for the forward- and reverse-biased dice of the reference diode. therefore, the temperature coefficient is given in on semiconductor data sheets only as a quick reference, for designers who are accustomed to this method of specification. a more meaningful way of defining temperature stability is the abox method.o this method, used by on semiconductor, guarantees that the zener voltage will not vary by more than a specified amount over a specified temperature range at the indicated test current, as verified by tests at several temperatures within this range. some devices are accurately compensated over a wide temperature range (55 c to 100 c), others over a narrower range (0 to 75 c). the wide-range devices are, as a rule, more expensive. therefore, it would be economically wasteful for the designer to specify devices with a temperature range much wider than actually required for the specific device application. during actual production of reference diodes, it is dif ficult to predict the compensation accuracy. in the interest of maximum economy, it is common practice to test all devices coming off the production line, and to divide the production lot into groups, each with a specified maximum d v z . each group, then, is given a different device type number. figure 3. typical voltage current characteristic of reference diodes i f (ma) 0.3 0.2 0.1 -6 -4 -2 -0.1 -0.2 -0.3 2 4 6 8 10 12 14 16 v f (v) i r (ma) v r (v) i z v z
http://onsemi.com 419 on the data sheet, the voltage-temperature characteristics of the most widely used device types are illustrated in a graph similar to the one shown in figure 4. the particular production line represented in this figure produces 6.2 volt devices, but the line yields five different device type numbers (1n821 through 1n829), each with a different temperature coefficient. the 1n829, for example, has a maximum voltage change of less than 5 mv over a temperature range of 55 to +100 c, while the 1n821 may have a voltage change of up to 96 mv over the same temperature range. figure 4. temperature dependence of zener voltage (1n821 series) d v z = +31 mv d v z = -31 mv i zt = 7.5 ma 1n821,a 1n823,a 1n825,a 1n829,a 1n827,a 1n827,a 1n825,a 1n823,a 1n821,a 100 75 50 25 0 -25 -50 -75 -100 -55 0 50 100 d v z , maximum voltage change (mv) (referenced to -55 c) in the past, design data and characteristic curves on data sheets fo r reference diodes have been somewhat limited: the devices hav e been characterized principally at the recommended operating point . on semiconductor has introduced a data sheet, providing devic e data previously not available, and showing limit curves that permi t worst-case circuit design without the need for associated tests re - quired in conjunction with the conventional data sheets. graphs such as these permit the selection of the lowest-cost device that meets a particular requirement. they also permit the designer to determine the maximum voltage change of a particular reference diode for a relatively small change in temperature. this is done by drawing vertical lines from the desired temperature points at the abscissa of the graph to intersect with each the positive- and negative-going curves of the particular device of interest. horizontal lines are then drawn from these intersects to the ordinate of the graph. the difference between the intersections of these horizontal lines with the ordinate yields the maximum voltage change over the temperature increment. for example, for the 1n821, a change in ambient temperature from 0 to 50 c results in a voltage change of no more than about 31 mv. the reason that the device reference voltage may change in either the negative or positive direction is that after assembly, some of the devices within a lot may be overcompensated while others may be undercompensated. in any design, the aworst-caseo condition must be considered. therefore, in the above example, it can be assumed that the maximum voltage change will not exceed 31 mv. it should be understood, however, that the above calculations give the maximum possible voltage change for the device type, and by no means the actual voltage change for the individual unit. 3. voltage-time stability. the voltage-time stability of a reference diode is defined by the voltage change during operating time at the standard test current (i zt ) and test temperature (t a ). in general, the voltage stability of a reference diode is better than 100 ppm per 1000 hours of operation. figure 5. current dependence of zener voltage at various temperatures (1n821 series) i z , zener current (ma) 10 9 8 7.5 7 6 5 4 -75 -50 -25 0 25 50 +100 c i zt +25 c -55 c +25 c +100 c -55 c d v z , maximum voltage change (mv) (referenced to i zt = 7.5 ma) the effect of current variation on zener voltage the nominal zener voltage of a reference diode is specified at a particular value of current, called the zener test current (i zt ). all measurements of voltage change with temperature are referenced to this test current. if the operating current is varied, all these specifications will change. the effect of current variation on zener voltage, at various temperatures, is graphically illustrated on the 1n821 data sheet as azener current versus maximum voltage change.o a typical example of such a graph is shown for the 1n821 series in figure 5. the voltage change shown is due entirely to the impedance of the device at the fixed temperature. it does not reflect the change in reference voltage due to the change in temperature since each curve is referenced to i zt = 7.5 ma at the indicated temperature. as shown, the
http://onsemi.com 420 greatest voltage change occurs at the highest temperature represented in the diagram. (see adynamic impedanceo under the next section). figure 5 shows that, at 25 c, a change in zener current from 4 to 10 ma causes a voltage shift of about 90 mv. comparing this value with the voltage-change example in figure 4 (31 mv), it is apparent that, in general, a greater voltage variation may be due to current fluctuations than to temperature change. therefore, good current regulation of the source should be a major consideration when using reference diodes in critical applications. it is not essential, however, that a reference diode be operated at the specified test current. the new voltage-temperature characteristics for a change in current can be obtained by superimposing the data of figure 5 on that of figure 4. a new set of characteristics, at a test current of 4 ma, is shown for the 1n823 in figure 6, together with the original characteristics at 7.5 ma. figure 6. voltage change with temperature for 1n823 at two different current levels +100 +50 0 -50 -100 -150 -200 -50 0 50 100 7.5 ma 4 ma temperature ( c) v z (mv) (referenced to -55 c) d from these characteristics, it is evident that the voltage change with temperature for the new curves is different from that for the original ones. it is also apparent that if the test current varies between 7.5 and 4 ma, the voltage changes would lie along the dashed lines belonging to the given temperature points. this clearly shows the need for a well-regulated current source. it should be noted, however, that even when a well-regulated current supply is available, other factors might influence the current flowing through a reference diode. for example, to minimize the effects of temperature-sensitive passive elements in the load circuit on current regulation, it is desirable that the load in parallel with the reference diode have an impedance much higher than the dynamic impedance of the reference diode. other characteristics in addition to the three major characteristics discussed earlier, the following parameters and ratings of reference diodes may be considered in some applications. power dissipation the maximum dc power dissipation indicates the power level which, if exceeded, may result in the destruction of the device. normally a device will be operated near the specified test current for which the data-sheet specifications are applicable. this test current is usually much below the current level associated with the maximum power dissipation. dynamic impedance zener impedance may be construed as composed of a current-dependent resistance shunted by a voltage-dependent capacitance. figure 7 indicates the typical variations of dynamic zener impedance (z z ) with current and temperature for the 1n821 reference diode series. these diagrams are given in the 1n821 data sheet. as shown, the zener impedance decreases with current but increases with ambient temperature. figure 7. variation of zener impedance with current and temperature (1n821 series) 1000 800 600 400 200 100 80 60 40 20 10 8 6 4 2 1 1 2 4681020406080100 i z , zener current (ma) z z , maximum zener impedance (ohms) -55 c 25 c 100 c the impedance of a reference diode is normally specified at the test current (i zt ). it is determined by measuring the ac voltage drop across the device when a 60 hz ac current with an rms value equal to 10% of the dc zener current is superimposed on the zener current (i zt ). figure 8 shows the block diagram of a circuit used for testing zener impedance.
http://onsemi.com 421 figure 8. block diagram of test circuit for measuring dynamic zener impedance dc power supply 88 i 8.8 8888
hp 712a a 88 i 8.8 8888
hp 650a signal generator 88 i 8.8 8888
hp 400h ac vtvm 88 i 8.8 8888
hp 412a dc vtvm meter dummy load 600 0.1 m f 1k 1k e 1 e 2 r x =z z read set read set (b) s 1 (a) 10m 100pf r 2 1 r x = e 1 -e 2 e 2 electrical testing all devices are tested electrically as a last step in the manufacturing process. the subsequent final test procedures represent an automated and accurate method of electrically classifying reference diodes. first, an electrical test is performed on all devices to insure the correct voltage-breakdown and stability characteristics. next, the breakdown voltage and dynamic impedance are measured. finally, the devices are placed in an automatic data acquisition system that automatically cycles them through the complete temperature range specified. the actual voltage measurements at the various temperature points are retained in the system computer memory until completion of the full temperature excursion. the computer then calculates the changes in voltage for each device at each test temperature and classifies all units on test into the proper category. the system provides a printed readout for every device, including the voltage changes to five digits during temperature cycling, and the corresponding eia type number, as well as the data referring to test conditions such as device position, lot number, and date. device reliability and quality assurance insuring a very low failure rate requires maximum performance in all areas ef fecting device reliability: device design, manufacturing processes, quality control, and reliability testing. on semiconductor's basic reliability concept is based on the belief that reference diode reliability is a complex yet controllable function of all these variables. under this atotal reliabilityo concept, on semiconductor can mass-produce high-reliability reference diodes. the reliability of a reference diode fundamentally depends upon the device design, regardless of the degree of effort put into device screening and circuit designing. therefore, reliability measures must be incorporated at the device design and process development stages to establish a firm foundation for a comprehensive reliability program. the design is then evaluated by thorough reliability testing, and the results are supplied to the design engineering department. this closed-loop feedback procedure provides valuable information necessary to improve important design features such as electrical instability due to surface effects, mechanical strength, and uniformly low thermal resistance between the die and ambient environment. process control there are more than 2000 variables that must be kept under control to fabricate a reliable reference diode. the in-process quality control group controls most of these variables. it places a strict controls on all aspects of manufacturing from materials procurement to the finished product. included in this broad spectrum of controls are: ? materials control. all materials purchased or fabricated in-plant are checked against rigid specifications. a quality check on vendors' products is kept up to date to insure that only materials of a proven quality level will be purchased. ? in-process inspection and control. numerous on-line inspection stations maintain a statistical process control program on specific manufacturing processes. if any of these processes are found to be out of control, the discrepant material is diverted from the normal production flow and the cognizant design engineer notified. corrective action is initiated to remedy the cause of the discrepancy. reliability testing the reliability engineering group evaluates all new products and gives final conclusions and recommendations to the device design engineer. the reliability engineering group also performs independent testing of all products and includes, as part of this testing program, step-stress-to-failure testing to determine the maximum capabilities of the product.
http://onsemi.com 422 some straight talk about mosorbs transient voltage suppressors introduction distinction is sometimes made between devices trademarked mosorb (by on semiconductor inc.), and standard zener/avalanche diodes used for reference, low-level regulation and low-level protection purposes. it must be emphasized from the beginning that mosorb devices are, in fact, zener diodes. the basic semiconductor technology and processing are identical. the primary difference is in the applications for which they are designed. mosorb devices are intended specifically for transient protection purposes and are designed, therefore, with a large effective junction area that provides high pulse power capability while minimizing the total silicon use. thus, mosorb pulse power ratings begin at 500 watts well in excess of low power conventional zener diodes which in many cases do not even include pulse power ratings among their specifications. movs, like mosorbs, do have the pulse power capabilities for transient suppression. they are metal oxide varistors (not semiconductors) that exhibit bidirectional avalanche characteristics, similar to those of back-to-back connected zeners. the main attributes of such devices are low manufacturing cost, the ability to absorb high energy surges (up to 600 joules) and symmetrical bidirectional abreakdowno characteristics. major disadvantages are: high clamping factor, an internal wear-out mechanism and an absence of low-end voltage capability. these limitations restrict the use of movs primarily to the protection of insensitive electronic components against high energy transients in application above 20 volts, whereas, mosorbs are best suited for precise protection of sensitive equipment even in the low voltage range the same range covered by conventional zener diodes. the relative features of the two device types are covered in table 1. important specifications for mosorb protective devices typically, a m osorb suppressor is used in parallel with the components or circuits being protected (figure 1), in order to shunt the destructive energy spike, or surge, around the more sensitive components. it does this by avalanching at its abreakdowno level, ideally representing an infinite impedance at voltages below its rated breakdown voltage, and essentially zero impedance at voltages above this level. in the more practical case, there are three voltage specifications of significance, as shown in figure 1a. a) v rwm is the maximum reverse stand-off voltage at which the mosorb is cut off and its impedance is at its highest value that is, the current through the device is essentially the leakage current of a back-biased diode. b) v (br) is the breakdown voltage a voltage at which the device is entering the avalanche region, as indicated by a slight (specified) rise in current beyond the leakage current. c) v rsm is the maximum reverse voltage (clamping voltage) which is defined and specified in conjunction with the maximum reverse surge current so as not to exceed the maximum peak power rating at a pulse width (tp) of 1 ms (industry std time for measuring surge capability). relative features of movs and mosorbs table 1. mov mosorb/zener transient suppressor ? high clamping factor. ? symmetrically bidirectional. ? energy capability per dollar usually higher than a silicon device. however, if good clamping is required the energy capability would have to be grossly overspecified resulting in higher cost. ? inherent wear out mechanism clamp voltage degrades after every pulse, even when pulsed below rated value. ? ideally suited for crude ac line protection. ? high single-pulse current capability. ? degrades with overstress. ? good high voltage capability. ? limited low voltage capability. ? very good clamping close to the operating voltage. ? standard parts perform like standard zeners. symmetrical bidirec- tional devices available for many voltages. ? good clamping characteristic could reduce overall system cost. ? no inherent wear out mechanism. ? ideally suited for precise dc protection. ? medium multiple-pulse current capability. ? fails short with overstress. ? limited high voltage capability unless series devices are used. ? good low voltage capability.
http://onsemi.com 423 in practice, the mosorb is selected so that its v rwm is equal to or somewhat higher than the highest operating voltage required by the load (the circuits or components to be protected). under normal conditions, the mosorb is inoperative and dissipates very little power. when a transient occurs, the mosorb converts to a very low dynamic impedance and the voltage across the mosorb becomes the clamping voltage at some level above v (br) . the actual clamping level will depend on the surge current through the mosorb. the maximum reverse surge current (i rsm ) is specified on the mosorb data sheets at 1 ms and for a logrithmically decaying pulse waveform. the data sheet also contains curves to determine the maximum surge current rating at other time intervals. typically, mosorb devices have a built-in safety margin at the maximum rated surge current because the clamp voltage, v rsm , is itself, guardbanded. thus, the parts will be operating below their maximum pulse-power (p pk ) rating even when operated at maximum reverse surge current). if the transients are random in nature (and in many cases they are), determining the surge-current level can be a problem. the circuit designer must make a reasonable estimate of the proper device to be used, based on his knowledge of the system and the possible transients to be encountered. (e.g., transient voltage, source impedance and time, or transient energy and time are some characteristics that must be estimated). because of the very low dynamic impedance of mosorb devices in the region between v (br) and v rsm , the maximum surge current is dependent on, and limited by the external circuitry. in cases where this surge current is relatively low, a conventional zener diode could be used in place of a mosorb or other dedicated protective device with some possible savings in cost. the surge capabilities most of on semiconductor's zener diode lines are discussed in on semiconductor's application note an784. in the data sheets of some protective devices, the parameter for response time is emphasized. response time on these data sheets is defined as the time required for the voltage across the protective device to rise from 0 to v (br) , and relates primarily to the effective series impedance associated with the device. this effective impedance is somewhat complex and changes drastically from the blocking mode to the avalanche mode. in most applications (where the protective device shunts the load) this response time parameter becomes virtually meaningless as indicated by the waveforms in figures 1b and 1c. if the response time as defined is very long, it still would not affect the performance of the surge suppressor. however, if the series inductance becomes appreciable, it could result in aovershooto as shown in figure 1d that would be detrimental to circuit protection. in mosorb devices, series inductance is negligible compared to the inductive effects of the external circuitry (primarily lead lengths). hence, mosorbs contribute little or nothing to overshoot and, in essence, the parameter of response time has very little significance. however, care must be exercised in the design of the external circuitry to minimize overshoot. summary in selecting a protective device, it is important to know as much as possible about the transient conditions to be encountered. the most important device parameters are reverse working voltage (v rwm ), surge current (i rsm ), and clamp voltage (v rsm ). the product of v rsm and i rsm yields the peak power dissipation, which is one of the prime categories for device selection. the selector guide, in this book, gives a broad overview of the mosorb transient suppressors now available from on semiconductor. for more detailed information, please contact your on semiconductor sales representative or distributor.
http://onsemi.com 424 figure 1a. figure 1b. figure 1. figure 1c. figure 1d. mosorb protected load z overshoot voltage v rsm time v (br) v rwm t p v in v out t clamping , very short voltage time v rsm v (br) v rwm v out v in voltage time voltage time v rsm v (br) v rwm v rsm v (br) v rwm v out v in t clamping , very long t clamping , with overshoot v out v in t p = pulse width of incoming transient v in v out
http://onsemi.com 425 typical mosorb applications + - + - + - mosorb mosorbs ac input dc power supply dc power supplies input/output regulator protection mosorb mosorb ic voltage regulator mosorb mosorb mosorb mosorb ic op amp +b -b op amp protection + - mosorb inductive switching transistor protection dc motor dc motors reduces emi memory protection microprocessor protection computer interface protection mos memory +5 v mosorbs i/o address bus ram rom data bus control bus mosorb mosorb v dd v gg gnd cpu clock i/o keyboard terminal printer etc. gnd functional decoder a b c d mosorb -8 v mosorb -10 v mosorbs v out
http://onsemi.com 426 ar450 characterizing overvoltage transient suppressors prepared by al pshaenich on semiconductor power products division the use of overvoltage transient suppressors for protecting electronic equipment is prudent and economically justified. for relatively low cost, expensive circuits can be safely protected by one or even several of the transient suppressors on the market today. dictated by the type and energy of the transient, these suppressors can take on several forms. for example, in the telecommunication field, where lightning induced transients are a problem, such primary suppressors as gas tubes are often used followed by secondary, lower energy suppressors. in an industrial or automotive environment, where transients are systematically generated by inductive switching, the transient energy is more well-defined and thus adequately suppressed by relatively low energy suppressors. these lower energy suppressors can be zener diodes, rectifiers with defined reverse voltage ratings, metal oxide varistors (movs), thyristors, and trigger devices, among others. each device has its own niche: some offer better clamping factors than others, some have tighter voltage tolerances, some are higher voltage devices, others can sustain more energy and still others, like the thyristor family, have low on-voltages. the designer's problem is selecting the best device for the application. thus, the intent of this article is twofold: 1. to describe the operation of the surge current test circuits used in characterizing lower energy transient suppressors. 2. to define the attributes of the various suppressors, allowing the circuit designer to make the cost/performance tradeoffs. surge suppressors are generally specified with exponentially decaying and/or rectangular current pulses. the exponential surge more nearly simulates actual surge current conditions capacitor discharges, line and switching transients, lightning induced transients, etc., whereas rectangular surge currents are usually easier to implement and control. to generate an exponential rating, a charged capacitor is simply dumped into the device under test (dut) and the energy of each successive pulse increased until the device ultimately fails. the simplified circuit of figure 1a describes the circuit. by varying the size of the capacitor c, the limiting resistor r2, and the voltage to which c is charged to, various peak currents and pulse widths (defined to the 10% discharge point in this paper) can be obtained. to figure 1a. simplified exponential tester figure 1b. simplified rectangular tester using pnp switch figure 1. basic surge current testers c s1 v in r1 r2 s2 i z dut 10% t w i z i z dut i z t w r l v ee v z automate this circuit, the series switches s1 and s2 can be replaced with appropriately controlled transistors or scrs. one method of easily implementing a rectangular surge current pulse is shown in the simplified schematic of figure 1b. a pnp transistor switch connected to the positive supply v ee applies power to the dut. the current is obviously set by varying either v ee and/or r l . if however, the transistor switch were replaced with a variable, constant current source, measurement procedures are simplified as how the limiting resistor need not be selected for various current conditions. as in most surge current evaluations, the dut is ultimately subjected to destructive energy (current, voltage, pulse width), the failure points noted, and the derated points plotted to produce the energy limitation curve. of particular interest is the junction temperature at which the duts are operated, be it near failure or at the specified derated point. this measurement relates to the overall reliability of the suppressor, i.e., can the suppressor sustain one surge current pulse or a thousand, and will it be degraded when operated above the specified maximum operating temperature? the rectangular current surge suppressor test circuit to be described addresses these questions by implementing and measuring the rectangular current capability of the
http://onsemi.com 427 suppressor and determining the device junction temperature t j shortly after the end of the surge current pulse. knowing t j , the energy to the dut can be limited just short of failure and thus a complete surge curve generated with only one, or a few duts (figure 6). second, with the junction temperature known, a reliability factor can be determined for a practical application. circuit operation for the rectangular current tester the surge suppressor test circuit block diagram is shown in figure 2 with the main blocks being the constant current amplifier supplying i z to the dut (a zener diode in this instance) during the power pulse and the diode forward current switch supplying i f during the temperature sensing time. these two pulses are applied sequentially, first the much larger i z , and then the very small sense current i f . during the i f time, the forward voltage v f of the diode is measured from which the junction temperature of the zener diode can be determined. this is simply done by calibrating the forward biased dut with a specified low value of i f in a temperature chamber, one point at 25 c and a second point at some elevated temperature. the result is the familiar diode forward voltage versus temperature linear plot with a slope of about 2 mv/ c for typical diodes (figure 7a). comparing the plot with the test circuit measured v f yields the dut junction temperature for that particular pulse width and i z (figure 7b). figure 2. surge suppressor test circuit block diagram 25 m s blanking mv gate sample pulse 300 m s sense mv short detector open detector v f s/h i z dut i f pulse gen clock i z i f the system clock, pulse generator, the several monostable multivibrators (25 m s blanking, sample pulse and 300 m s sense mvs) and gate are fashioned from three cmos gate ics. the remaining blocks are the sample and hold (s/h) circuit and two detectors for determining the status of failed duts, either shorted devices or open. shown in figures 3 and 4 respectively, are the complete circuit and significant waveforms. clocking for the system is derived from a cmos, two inverters, astable mv (gates 1a and 1b) whose output triggers the two input nor gate configured monostable mv (gates 1c and 1d) to produce the pulse generator output pulse (figure 4b). alternatively, a single pulse can be obtained by setting switch s2 to the one shot position and depressing the pushbutton start switch s1. contact bounce is suppressed by the 100 ms mv (gates 4c and d). frequency of the astable mv, set by potentiometer r1, can vary from about 200 hz to 0.9 hz and the pulse width, controlled by r2 and the capacitor timing selector switch s3, from about 300 m s to 1.3 s. the positive going pulse generator output feeds the constant current amplifier i z and turns on, in order, npn transistor q1, pnp transistor q3, npn darlington q4, pnp power darlington q6 and parallel connected pnp power transistors q8 and q9. transistor q4 is configured as a constant current source whose current is set by the variable base voltage potentiometer r3. thus, the voltage to the bases of q6, q8 and q9 are also accordingly varied. transistors q8 and q9 (mj14003, i c continuous of 60 a), also connected as constant current sources with their 0.1 w emitter ballasting resistors, consequently can produce a rectangular current pulse from a minimum of about 0.5 a and still have adequate gain for 1 ms pulses of 150a peak. due to propagation delays of this amplifier, the i z current waveform is as shown in figure 4f. since q8 and q9 must be in the linear region for constant current operation, these transistors are power dissipation limited at high currents to the externally connected power supply v+ of 60 v. thus the maximum dut voltage, taking into account the clamping factor of the device, should be limited to about 50 v. at wider pulse widths and consequently lower currents before the dut fails, the v+ supply should be proportionally reduced to minimize q8, q9 dissipation. as an example, a 28 v surge suppressor operating at 100 ms pulse widths can be tested to destructive limits with v+ of about 40 v. although a zener diode is shown as the dut in the schematic, the test devices can be any rectifier with defined reverse voltage, e.g., surge suppressors. immediately after the power pulse is applied to the dut, the negative going sense pulse from the 300 m s mv (gate 2a, figure 4e) turns on series connected pnp transistor q10 and npn transistor q11 of the diode forward current switch i f . sense current, set by current limiting resistor selector switch s4, thus flows up from ground through the forward biased dut, the limiting resistor, and q11 to the 15 v supply. the result, by monitoring the cathode of the dut, is a 300 m s wide, approximately 0.6 v pulse.
http://onsemi.com 428 p.w. m.v. sw s4 5 ma red 4d 12 13 11 4c s1 start sw +15 v 0.001 m f 0.1 m f 47 k 100 k 8 9 100 ms mv contact bounce 1.8m +15 v 10 2 1a 1 1m u4c,d (1/2) mc14001 47 k 100 k 1 shot sws2 4 22 k 1b 3 sw s6 270 pf free run 1c 6 7 5 freq cont r1 5m 0.01 m f 3d 12 13 0.1 clock u1 mc14572 5 ms < t 1 < 1.2s 47 k 1 k w sync r2 sw s3 0.0033 m f n 0.4 m f 39 k 5m pw cont +15 v i 2 switch 3.9 k 5.6 k 22 k 10 k 47 k 270 pf 100 k 8 m s sample pulse 270 pf 1.2m 390 pf triad f90x 1d 9 1f 11 2a 1 2 3 2c 8 9 10 2d 12 13 14 3b 5 6 4 3c 8 9 10 3a 1 2 3 4b 6 5 4 4a 2 1 3 - + 2 3 +15 v +15 v 60 m s < t 2n < 8.5 ms 14 15 1e +15 v 47 k 13 16 8 330 pf 100 k 2b 5 6 4 12 u2 mc14001 25 m s m.v. 300 m s sense m.v. 200 m f 25 v +- 120 v 7 ms < t 2w < 1.1 s mda101a 0.1 m f pwr on led 2 mc 7815 100 k 10 k q18 2n3904 390 k 100 k 270 pf u3 mc14001 m c 7915 2 red 1.2 k 1/2 w + 200 m f 25 v (2) 1 10 k 2 w 0.1 w 25 w (2) +15 v 1n914 220 pf +15 v 390 pf 200 m f 25 v dut 1n914 +15 v -15 v 0.1 m f +15 v +15 v 7 100 m s sample delay m.v. p. w. 4,7 k 1 w 25 m s +15 v q14 mps8099 2n3906 q15 10 k 1 k short led #1 red red open led 100 k 470 1 w 470 1 w short detector #1 q16 2n5060 0.1 m f 0.1 m f 43 k 10 k 4.7 k -15 v +15 v 0.1 m f 4.7 k -15 v 1 k 0.1 m f 1 k 0.1 m f 4.7 k 10 k 0.1 m f -15 v q13 2n4858 25 k 100 k (1/2) mc14001 u4a,b 10 k 100 k 150 k +15 v 47 k 1 k 5 pf +15 v 0.1 m f 1n914 (2) mr821 1.3 k 4.7 k -15 v i f switch 0.1 m f 10 k 180 300 1/2 w 820 1.2 k 10 k 390 22 1/2 w 1 k 3.3 k 12 k 10 m w 100 k 47 k 1 k 1n914 10 k 1 k 1/2 w 10 k 1n914 0.1 m f 0.1 m f u8 gate 300 m s 100 m s 8 m s sense delay sample i 2 v 2 dut -0.7 +3 v +15 v 2n5060 q17 open detector reset sw s5 0.1 m f 0.001 m f 1 u5a (1/2) mc1458 0.1 m f v f +15 v + - 5 6 7 + - 3 2 6 8 4 1 5 7 4 s/h u7 lf355 sd -15 v + - 3 2 6 7 4 u6 lf355 ci r4 +15 v 1 k 0.1 m f 0.001 m f 0.001 q12 2n3906 short led #2 47 k 22 k 10 k q8 q9 q7 2n6668 v + 60 v 10.000 m f 75 v q5 8599 mps 15 k 1/2 w +15 v 0.1 m f 680 1/2 w r3 1 k 2.7 k 10 ma 560 25 ma v 2 10 2n6287 q6 mpsa29 q4 2n3906 q3 q1 2n3904 q2 2n3906 +15 v q10 2n3906 q11 mps8099 u9 short det #2 +15 v 23 3 u5b (1/2) mc1458 i 2 fi g ure 3. sur g e su pp ressors sur g e current fixture
http://onsemi.com 429 for accurate measurements of this pulse amplitude, sample and hold circuitry is employed. this consists of unity gain buffer amp u6, series fet switch q13 and capacitor hold buffer amp u7. the sample pulse (figure 4h) to the gate of the fet is delayed about 100 m s (by monostable mv g-2c and g-2d) to allow for switching and thermal transients to settle down. this pulse is derived from the negative going, trailing edge output pulse of gate 2d cutting off transistor q18 for the rc time constant in its base circuit. the result is an approximate 8 m s wide sample pulse. consequently, the dc output voltage from hold amplifier u7 is a measure of the dut junction temperature. invariably, most duts will fail short. when the surge suppressor tester is in the free-run mode, the power pulse subsequent to the dut shorting could excessively stress the constant current drivers q8 and q9. to prevent this occurrence, the short detector circuit was implemented. this circuit consists of comparator u5a, 2 input nor gate configured 25 m s monostable mv (g1e and g1f), gate circuit g3a, 3b and 3c, and scr q16. the 25 m s mv (figure 4d) is required to blank out turn-on switching transients to produce the waveform shown in figure 4i. during the power pulse, u5a is normally high for a good dut (figure 4j). this waveform is nor'd with gate 3b (inverted waveform of figure 4i) to produce a low level (0 v) gate 3c output (figure 4k). if, however, the dut is shorted, u5a output switches low resulting in a positive pulse output from g3c. this pulse triggers the scr on, lighting the led in its anode circuit and turning on the pnp transistor q2 across the emitter-base of q3, thus clamping off the i z power pulse. the circuit (q16) can be reset by opening switch s5. by and large, this short detector circuit was found adequate to protect transistors q8 and q9. however, for some wide pulse widths, relatively high current conditions, the propagation delay through the short detector was too great, resulting in excessive fbsoa (forward bias safe operating area) stress on q8 and q9. consequently, a faster short detector #2 was implemented. figure 4. surge suppressor test circuit waveforms +15 v -14 v clock g1b pulse gen g1d pulse gen g1c 25 m s mv g1e 300 m s sense mv g2a i z 100 m s sample delay mv g2d 8 m s sample pulse q8 gate g3c short comparator u6a open scr trigger u5b short scr trigger g3c v f u6 -0.6 v -14 v good short good short good good open open (4a) (4b) (4c) (4d) (4e) (4f) (4g) (4h) (4i) (4j) (4k) (4l) (4m)
http://onsemi.com 430 this circuit, connected to the collectors of q8 and q9, uses a differentiating network (r4, c1) to discriminate between the normally relatively slow fall time of the voltage pulse on the dut, and the exceedingly fast fall time when the device fails. thus, the r4-c1 time constant (5 ns) will only generate a negative going trigger to pnp transistor q12 when the dut voltage collapses during device failure. the positive going output from q12 resets the flip-flop (gates 4a and 4b), which turns on the npn transistor q14. this transistor supplies drive to the two pnp clamp transistors (q5 and q7) placed respectively across the emitter-bases of the high, constant current stages q6 and q8 and q9. propagation delay is thus minimized, providing greater protection to the power stages of the tester. as an added safety feature, the positive going output from gate 3c when short detector #1 is activated is also used to trigger the flip-flop. on the few occasions when the dut fails open, then the open detector consisting of comparator u5b and scr q17 comes into play. this circuit measures the dut integrity during the sense time. for a good dut (v f < 1 v), u5b output remains low (see figures 4l and 4m). however for an open dut, v f switches to the negative rail and u5b goes high, turning on q17. as in the short detector, q2 clamps off the i z power amplifier. all of the circuitry including the +15 v and 15 v regulated power supplies are self-contained, with the exception of the v+ supply. for high current, narrow pulse width testing, this external supply should have 10 to 15 a capability. if not, additional energy storing capacitors across the supply output may be required. circuit operation for the exponential surge current tester to generate the surge current curve of peak current versus exponential discharge pulse width, the test circuit of figure 5 was designed. this tester is an implementation of the simplified capacitor discharge circuit shown in figure 1a, with the pnp high voltage transistor q2 allowing the capacitor c to charge through limiting resistor r1 and a triggered scr discharging the capacitor. as shown in figure 5, the duts can be of any technology, although the device connected to the capacitor and discharge limiting resistor r s is shown as an mos scr. it could just as well have been an scr as the dut or as the switch for the zener diode, rectifier, sidac, etc., duts. system timing for this exponential surge current tester is derived from a cmos quad 2 input nor gate with gates 1a and 1b comprising a non-symmetrical astable mv of about 13 seconds on and about one second off (switch s3 open). the positive on pulse from gate 1b turns on the 500 v power mosfet q1 and the following pnp transistor q2. the extremely high current gain fet allows for the large base current variation of q2 with varying supply voltage (v+). this capacitor charging circuit has a 400 v blocking capability (limited by the v ceo of q2) and thus the capacitor c1 used should be comparably rated. when operating with high voltage (v+ = 200 to 350 v) and large capacitors (>3000 m f), the power dissipated in the current limiting resistor r1 can be substantial, thus necessitating the illustrated 20 w rating. for longer charging times, switch s3 is closed, doubling the timing capacitor and the astable mv on time. to discharge capacitor c1 and thereby generate the exponential surge current, the scr must be fired. this trigger is generated by the positive going one second pulse from gate 1a being integrated by the r2c2 network, and then shaped by gates 1c and 1d. the net result of about 100 m s time delay from gate 1d ensures noncoincident timing conditions. this pulse output is then dif ferentiated by c3-r3 with the positive going leading edge turning on q3, q4 and finally the scr with about a 4 ms wide, 15 ma gate pulse. consequently, the dut is subjected to a surge current pulse whose magnitude is dictated by the voltage on the capacitor c1 and value of resistor r s , and also whose pulse width to the 10% point is 2.3 r s c1. for a fixed pulse width, the dut is then stressed with increasing charge (by increasing v+) until failure occurs, usually a shorted device. if the dut is the scr (or mos scr), the failed condition is obvious as the capacitor c1 will not be allowed to charge for subsequent timing cycles. however, when the dut is the zener, rectifier, sidac or even an mov, and the scr is an adequately rated switch, the circuit will still discharge through the shorted dut, but now the scr alone will be stressed by the surge current. a shorted dut can be detected by noting the voltage across the device during testing. one problem encountered when stressing scrs with high voltage is when the dut fails short. the limiting resistor r1, which is only rated for 20 w, would now experience continuous power dissipation for the full on time as much as 123 w ([350 v] 2 /1k). to prevent this occurrence, the p r1 short protection circuit is incorporated. since this is only a problem when high v+'s (>100 v) are used, the circuit can be switched in or out by means of switch s2. when activated, this circuit monitors the voltage on capacitor c1 some time after the charging cycle begins. if the capacitor is charging, normal operation occurs. however, if the scr dut is shorted, the absence of voltage on the capacitor is detected and the system is disabled. the circuit consists of one cmos ic with nand gates 2a and 2b comprising a one second monostable time delay mv and gates 2c and 2d forming a comparator and nand gate, respectively. the negative going, trailing edge of gate 2a is differentiated by r4-c4, and amplified by q5 to form a positive, 10 ms wide pulse (delayed by 1 sec) to gate 2d input. if the capacitor c1 is shorted, gate 2c output is high, allowing the now negative pulse from gate 2d to turn on pnp transistor q6 and scr q7. this latches the input to the astable mv gate 1a low, disabling the timing and consequently removing the power from r1. resetting the tester for a new device is accomplished by depressing the pushbutton switch s1.
http://onsemi.com 431 figure 5. exponential surge current tester 12 13 2d 11 q2 mje5852 grn led q4 2n3906 q3 2n3904 cap discharge sidac dut rectifier dut 12 13 1b 11 14 7 +15 v 1n914 1k 20 w 47k 1n914 r4 47k 5 6 2b 4 1 2 1c 3 10k +15 v 1.5k 1/2 w 1k 15m 10k zener dut 1n914 22k 10k 0.1 m f c3 r3 10k 1k 15k 20 w +15 v 0.001 m f c2 8 9 1a 10 +15 v mc14011 r2 100 k +15 v 1m 1.8m 18m 1n914 22m 0.47 m f 10 2 w c1 r s +15 v 22k 8 9 2c 10 1m +15 v q6 2n3906 2n5060 q7 sw s1 1k 1/2 w +15 v red led reset 0.1 m f 6.8k q5 2n3906 22k +15 v 0.01 m f 1 2 2a 3 1 sec delay mv mc14011 sw s2 0.1 m f c4 +15 v 0.1 m f 100k +15 v 1k 10k 1n4005 scr dut/sw mos scr dut dut short indicator r 1 v+ 350 v q1 mtp2n50 5 6 1d 4 47k 22k 1k +15 v 150k 2 w 0.47 m f 13s 25s sw s3 lv hv sw s4 2n3904 on time exponential surge current curves, as well as rectangular, are generated by destructive testing of at least several duts at various pulse widths and derating the final curve by perhaps 2030%. these tests were conducted at low duty cycles (<2%). to ensure multicycle operation, the duts are then tested for about 1000 surges at a derated point on the curve. test results in trying to make a comparison of the several different technologies of transient suppressors, some common denominator has to be chosen, otherwise, the amount of testing and data reduction becomes unwieldy. for this exercise, voltage was used, generally in the 20 v to 30 v range, although some of the more unique suppressors (sidacs, mos scrs, scrs) were tested at their operating voltage. as an example, the sidac trigger families of devices were tested with voltages greater than their breakover voltage (104 v to 280 v) and the scrs were subjected to exponential surge currents derived from voltages generally greater than 30 v. also, since energy capability is related to die size, this parameter is also listed. for several devices, both rectangular and exponential surge current pulses are listed. other devices were tested with only rectangular pulses (where the junction temperature can be determined) and still others, whose applications include crowbars, with exponential current only. avalanche rectifier the rectangular surge current tester was originally designed for characterizing rectifier surge suppressors used in automotive applications. for this operation, where temperatures under the hood can reach well over 125 c, it is important to know the device junction temperature at elevated ambient temperature. figures 6 and 7 describe the results of such testing on a typical suppressor, the 24 v32 v mr2520l. it should be noted that these axial lead suppressors, as well as all other axial lead devices tested, were mounted between two spring loaded clips spaced 1 inch apart.
http://onsemi.com 432 as shown in figure 6 of the actual current failure points of the duts, at least four devices were tested at the various pulse widths, t w (in this example from 0.5 ms to 100 ms). also shown in figure 6 is the curve derived with a single dut at an energy level just short of failure. this measurement was obtained by maintaining a constant rectifier forward voltage drop, v f (0.25 v) for all pulse widths (junction temperature, t j of 230 c) by varying the avalanche current. thus, one device can be used, non-destructively, to generate the complete rectangular surge current curve. it should also be pointed out that the definition for the exponential t w in this article is the current discharge point to the 10% value of the peak test current i zm . expressed in time constant t , this would be 2.3 rc. some data sheets describe t w to the 50% point of i zm (0.69 t ) and others to 5 t . to normalized these time scales (abscissa of curves) simply change the scales accordingly; i.e., i zm/2 pulse widths would be multiplied by 2.3/0.69 = 3.33 for t w at 10% current pulses. figure 7a describes the actual temperature calibration curve (measured in a temperature chamber) of the mr2520l and figure 7b, the junction temperature of the dut at various 10 ms rectangular pulse current amplitudes. these temperatures are taken from the calibration curve (in actuality, an extremely linear curve), knowing the rectifier forward voltage drop immediately (within 100 m s) after cessation of power. note that the junction temperature just prior to device failure is about 290 c. figure 6. experimental rectangular surge current capability of the mr2520l rectifier surge suppressor i , peak surge current (amps) z actual duts failure points one dut with v f = 0.25 v mr2520l rectifier surge suppressor, rectangular pulse v z = 28 v typ t a = 25 c 100 50 20 10 200 10 20 50 100 0.5 1 5 2 t w , rectangular pulse width (ms) t j = 230 c zener overvoltage transient suppressor illustrated in figure 8 are the actual rectangular and exponential surge current curves of the p6ke30 overvoltage transient suppressor, an axial lead, case 17, 30 v zener diode characterized and specified for surge currents. this device is specified for 600 w peak for a 1 ms exponential pulse measured at i zm/2 . from the exponential curve, it is figure 7a. temperature calibration curve of the mr2520l v , forward voltage (volts) f mr2520l avalanche rectifier surge suppressor i f = 10 ma 0.2 0.6 1 0 0.8 0.4 50 100 0 150 200 250 300 350 t j , junction temperature ( c) rectangular pulse t w = 10 ms i f = 10 ma i z (a) v f (v) t j ( c) 1 1 10 20 30 40 50 0.64 0.57 0.48 0.36 0.25 0.15 2 25 75 120 180 230 290 55 0.10 dut failed figure 7b. measured forward voltage figure 7. calculated junction temperature of the mr2520l surge suppressor at various avalanche currents apparent that the device is very conservatively specified. also, the relative magnitudes of the two curves reflect the differences in the rms values of the two respective pulses. sidac sidacs are increasingly being used as overvoltage transient suppressors, particularly in telephone applications. being a high voltage bilateral trigger device with relatively high current capabilities, they serve as a costeffective overvoltage protection device. as in other trigger devices, when the sidacs breakover voltage is exceeded, the device switches to a low voltage conduction state, allowing an inordinate amount of surge current to be passed. this is well illustrated by the surge current curves of figure 9 which describe the small die size ([37] 2 mil) axial lead, case 59-04, mkp9v240 sidac. the curves show that this 240 v device was able to handle, to failure, as much as 31 a and 15 a, respectively, for 1 ms exponential and rectangular current pulses. under the same pulse conditions, the large die ([78] 2 mil) mk1v270 sidac handled 170 a and 60 a, respectively, as shown in table 2.
http://onsemi.com 433 figure 8. surge current capability of the p6ke30 overvoltage transient suppressor as a function of exponential & rectangular pulse widths i , peak surge current (amps) z i z 10 % t w rectangular exponential i z 2 @ t w , pulse width (ms) 100 50 10 10 50 100 0.5 1 5 0.1 500 1000 p6ke30 overvoltage transient suppressor v z = 30 v p spec = 600 w pk 5 1 figure 9. measured surge current to failure of a sidac mkp9v240 i , peak surge current (amps) z 100 50 20 10 10 20 50 100 0.2 0.5 1 5 2 5 1 2 sidac mkp9v240 240 v case 5904 37 2 mils exponential rectangular i z 10 % t w t w , pulse width (ms) overall ratings the compilation of all of the testing to date on the various transient suppressors is shown in tables 1 and 2. table 1 describes the zener suppressors, avalanche rectifiers and movs, comparing the die size and normalized costs (referenced to the mov v39ma2a). from this data, the designer can make a cost/performance judgment. of interest is that the small pellet mov is not the least expensive device. the p6ke30 overvoltage transient suppressor costs about 85% of the mov, yet it can handle about three times the current (2.5 a to 0.7 a) for a 100 ms rectangular pulse. under these conditions, the resultant clamping voltages for the zener and mov were 32 v and 60 v respectively. also shown in the table is a 1.5 w zener diode specified for zener applications. this low surge current device costs three times the mov, illustrating that tight tolerance zener diodes are not cost effective and that the user should use devices designed and priced specifically for the suppressor application. thyristor type surge suppressors are shown in table 2. they include four sidac series, two scrs designed and characterized specifically for crowbar applications and also the mos scr mcr1000. the mos scr, a process variation of the vertical structure power mosfet, combines the input characteristics of the fet with the latching action of an scr. all devices were surge current tested with the resultant peak currents being impressively high. the to-220 (150) 2 mil scr mcr69 for example, reached peak current levels approaching 700 a for a 1 ms exponential pulse. the guaranteed, derated, time base translated curves for the crowbar scr family of devices are shown in figure 10, as is the mk1v sidac in figure 11. figures 12ac describe the guaranteed, reverse surge design limits for the avalanche rectifier devices. these three figures illustrate, respectively, the peak current, power and energy capabilities of these overvoltage transient suppressors derived from exponential testing. the peak power, p pk , ordinate of the curve is simply the product of the derated i z and v z and the energy curve, the product of p pk and t w .
http://onsemi.com 434 figure 10. scr crowbar derating curves figure 11. exponential surge current capability of the mk1v sidac, pulse width versus peak current figure 12b. peak power i pk 5 tc t w i , peak current (amps) pk c = 8400 m ft a = 25 c esr 25 m w n = 2000 pulses v c 60 v f = 3 pulses/min. a. peak surge current versus pulse width mcr70 mcr69 mcr68 mcr67 mcr71 100 30 3000 1000 300 0.5 1 5 0.1 50 10 100 t w , base pulse width (ms) sidac mk1v115 v (bo) = 115 v max t a = 25 c t w , pulse width (ms) i , peak surge current (amps) z 100 50 30 10 1 3 5 10 30 50 100 0.3 0.5 1 3 5 300 i z 10% t w t c = 25 c, duty cycle 1% see note for time constant definition mr2530l mr2525l mr2520l , peak reverse power (watts) rsm p 700 500 7000 5000 3000 2000 1000 10 20 50 100 15 2 200 500 100 0 t , time constant (ms) 10000 b. peak surge current versus ambient temperature 25 75 50 100 0 125 0.6 0.8 1 0.4 normalized peak surge current n = 2000 pulses figure 12a. peak current t c = 25 c, duty cycle 1% see note for time constant definition mr2530l mr2525l mr2520l 200 70 50 20 300 100 30 , peak reverse current (amps) rsm i 10 20 50 100 15 2 200 500 1000 t , time constant (ms) t c = 25 c, duty cycle 1% see note for time constant definition mr2530l mr2525l mr2520l t , time constant (ms) 100 50 20 30 200 300 , peak reverse energy (joules) rsm w 10 20 50 100 15 2 200 500 1000 figure 12c. energy figure 12. guaranteed reverse surge design limits for the mr2525l & mr2530l overload transient suppressors t a , ambient temperature ( c) note: t = rc
http://onsemi.com 435 table 1. measured surge current capability of transient suppressors spec. peak current at pulse widths, i pk (amps) clamping device power die 1 ms 10 ms 20 ms 100 ms cl amp i ng factor v 1ms norm. cost device type title part no. case volt power (energy) die size exp. rect. exp. rect. exp. rect. exp. rect. v 1ms v 100ms cost * avalanche surge supp., overvolta g e mr2520l 194 05 24-32 v 2.5kw peak 150 2 mil 85 a 40 30 18 27v 22v 1.2 avalanche rectifier overvoltage transient suppressor mr2525l 194-05 24-32 v 10kw peak 196 2 mil 150 a 70 54 37 31 23 1.3 4.0 1.5 w zener 1n5936a do 41 30 v 1.5 w 37 2 12 a 5 6 2.5 5 2 3 1.3 41 30 1.4 32 1 . 5 w zener diode 1n5932a do-41 20 v 1 . 5 w cont. 37 mil 23 a 6 10 2.8 7 2.3 5 1.4 28 23 1.2 3.2 zener overvoltage transient p6ke30 17 30 v 600 w 60 2 43 a 14 14 5 10 4.5 5 2.5 41 32 1.3 085 zener transient suppressor p6ke10 17 10 v 600 w peak 60 mil 24 a 12 9 5.5 16 13 1.2 0.85 mosorb 1.5ke30 41a 02 30 v 1500 w 104 2 35 a 10 4 35 33 1.1 18 mosorb 1.5ke24 41a-02 24 v 1500 w peak 104 mil 45 a 14 6 30v 28v 1.1 1.8 mov** metal oxide v39ma2a axial lead 28 v 0.16 joules
3 mm 9 a 5 0.7 80v 60v 6a 0.7a 1.0 mov** oxide varistor v33za1 radial lead 26 v 1.0 joules
7 mm 35 4 a 105v 80v 35a 4a 1.4 **g.e. table 2. measured surge current of thyristor type devices i pk @ t w voltage die 1 ms 10 ms norm cost technology device voltage ratings case die size exponent. rectang. exponent. rectang. cost * mkp9v130 series 104 v135 v 59 04 37 2 mil 40 a 13 a 16 a 8a 087 sidac mkp9v240 series 220 v280 v 5904 37 2 mil 31 a 15 a 20 a 8a 0.87 sidac mk1v135 series 120 v135 v 267 01 78 2 mil 140 a 80 a 55 a 30 a 11 mk1v270 series 220 v280 v 26701 78 2 mil 170 a 60 a 90 a 28 a 1.1 scr mcr68 series 25 v 400 v 92 2 mil 300 a 170 a 1.2 scr mcr69 series 25 v400 v to 220 150 2 mil 700 a 400 a 1.9 mos scr mcr1000 series 200 v600 v to220 127 mil x 183 mil 250 a 170 a 9.3 *normalized to g.e. mov v39ma2a, qty 1-99, 1984 price additionally, the published non-repetitive peak power ratings of the various zener diode packages are illustrated in figure 13. figure 14 describes the typical derating factor for repetitive conditions of duty cycles up to 20%. using these two empirically derived curves, the designer can then determine the proper zener for the repetitive peak current conditions. at first glance the derating of curves of figure 14 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 m s pulse. however, when the mathematics of multiplying the derating factor of figure 14 by the peak power value of figure 13 is performed, the resultant respective power and current capability of the device follows the expected trend. for example, for a 5 w, 20 v zener operating at a 1.0% duty cycle, the respective derating factors for 10 m s and 10 ms pulses are 0.08 and 0.47. the non-repetitive peak power capabilities for these two pulses (10 m s and 10 ms) are about 1300 w and 50 w respectively, resulting in repetitive power and current capabilities of about 104 w and 24 w and consequently 5.2 a and 1.2 a. mov all of the surge suppressors tested with the exception of the mov are semiconductors. the mov is fabricated from a ceramic (zn0), non-linear resistor. this device has wide acceptance for a number of reasons, but for many applications, particularly those requiring good clamping
http://onsemi.com 436 figure 13. peak power ratings of zener diodes power is defined as v z(nom) x i z(pk) where v z(nom) is the nominal zener voltage measured at the low test current used for voltage classification. 1n6267 series glass do35 & glass do41 250 mw to 1 w types 5 watt types pulse width (ms) 0.1 100 0.01 0.02 p pk(nom) , nominal peak power (kw) 50 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.05 0.2 0.5 1 2 5 10 1 to 3 w types plastic do41 figure 14. typical derating factor for duty cycle 0.1 0.2 0.5 1 5 2 10 20 50 100 pulse width 10 ms 1 ms 100 m s 10 m s d, duty cycle (%) derating factor 1 0.7 0.5 0.3 0.2 0.02 0.1 0.07 0.05 0.03 0.01 factors, the mov is found lacking; (clamping factor is defined as the ratio of v z at the test current to that at 1.0 ma). this is photographically illustrated in figure 15 which compares a 27 v zener (1n6281) with a 27 v mov (v27za4). the input waveform, through a source impedance resistance to the duts, was an exponentially decaying voltage waveform of 90 v peak. figures 15a and b compare the output waveforms (across the duts) when the source impedance was 500 w and figures 15c and d for a 50 w condition. the zener clamped at about 27 v for both impedances whereas the mov was about 40 v and 45 v respectively. surge current capabilities of a comparably powered mov were also determined, as shown in the curve of figure 16. although the mov, a v39ma2a, is specified as a 28 v figure 15a. figure 15b. source impedance r s = 500 w 27 v mov g.e. v27za4, 4 joules capability 27 v zener diode on semiconductor 1n6281, approx. 1.5 joules source impedance r s = 500 w continuous device (39 v 10% at 1 ma) at the pulse widths and currents tested, the resultant voltage v z across the mov 80 v at about 6 a necessitated a high voltage fixture. this was accomplished with a circuit similar to that of figure 1b. but movs do have their own niche in the marketplace, as described in table 3, the relative features of movs and mosorbs.
http://onsemi.com 437 figure 15c. figure 15d. 27 v mov 27 v zener diode figure 15. clamping characteristics of a 27 v zener diode and 27 v mov source impedance r s = 50 w source impedance r s = 50 w g.e. v39ma2a mov v dcm = 28 v v nom = 39 v @ 1 ma t a = 25 c 10 5 0.3 0.5 3 0.1 1 10 30 50 100 135 i , peak surge current (amps) z t w , pulse width (ms) figure 16. rectangular surge current capability of the v39ma2a mov table 3. relative features of movs and mosorbs mov mosorb/zener transient suppressor high clamping factor very good clamping close to the operating voltage. symmetrically bidirectional standard parts perform like standard zeners. symmetrical bidirectional devices available for many voltages. energy capability per dollar usually much greater than a silicon device. however, if good clamping is required a higher energy device would be needed, resulting in higher cost. good clamping characteristics could reduce overall cost. inherent wear out mechanism, clamp voltage degrades after every pulse, even when pulsed below rated value. no inherent wear out mechanism. ideally suited for crude ac line protection. ideally suited for precise dc protection. high single-pulse current capability. medium multiple-pulse current capability. degrades with overstress. fails short with overstress. good high voltage capability. limited high voltage capability unless series devices are used. limited low voltage capability. good low voltage capability.
http://onsemi.com 438 summary the surge current capabilities of low energy overvoltage transient suppressors have been demonstrated, including cost/performance comparison of rectifiers, zeners, thyristor type suppressors, and movs. both rectangular and exponential testing have been performed with the described testers. additionally, the rectangular current surge tester has the capability of measuring the diode junction temperature of zeners and rectifiers at various power levels, thus establishing safe operating limits. references 1. cherniak, s., a review of transients and their means of suppression, on semiconductor application note an843. 2. wilhardt, j., transient power capability of zener diodes, on semiconductor application note an784. 3. pshanenich, a., characterizing the scr for crowbar applications, on semiconductor application note an879. 4. pshaenich, a., the sidac, a new high voltage trigger that replaces circuit complexity and cost, on semiconductor engineering bulletin eb-106. 5. general electric, transient voltage suppression manual, second edition.
http://onsemi.com 439 measurement of zener voltage to thermal equilibrium with pulsed test current prepared by herb saladin discrete power application engineering introduction this paper discusses the zener voltage correlation problem which sometimes exists between the manufacturer and the customer's incoming inspection. a method is shown to aid in the correlation of zener voltage between thermal equilibrium and pulse testing. a unique double pulsed sample and hold test circuit is presented which improves the accuracy of correlation. 1 several zener voltages versus zener pulsed test current curves are shown for four package styles. an appendix is attached for incoming inspection groups giving detailed information on tolerances involved in correlation. for many years the major difficulty with zener diode testing seemed to be correlation of tight tolerance voltage specifications where accuracy between different test setups was the main problem. the industry standard and the eia registration system adopted thermal equilibrium testing of zener diodes as the basic test condition unless otherwise specified. thermal equilibrium was chosen because it was the most common condition in the final circuit design and it was the condition that the design engineers needed for their circuit design and device selection. thermal equilibrium testing was also fairly simple to set-up for sample testing at incoming inspection of standard tolerance zeners. in recent years with the advent of economical computerized test systems many incoming inspection areas have implemented computer testing of zener diodes which has been generating a new wave of correlation problems between customers and suppliers of zener diodes. the computerized test system uses short duration pulse test techniques for testing zener diodes which does not directly match the industry standard thermal equilibrium test specifications. this paper was prepared in an attempt to clarify the differences between thermal equilibrium and short duration pulse testing of zener diodes, to provide a test circuit that allows evaluation at various pulse widths and a suggested procedure for incoming inspection areas that will allow meaningful correlation between thermal equilibrium and pulse testing. in the measurement of zener voltage (v z ), the temperature coefficient effect combined with test current heating can present a problem if one is attempting to correlate v z measurements made by another party (final test, quality assurance or incoming inspection). 2 this paper is intended as an aid in determining v z at some test current (i zt ) pulse width other than the pulse width used by the manufacturer. thermal equilibrium (te) is reached when diode junction temperature has stabilized and no further change will occur in v z if the i zt time is increased. 2 this absolute value can vary depending on the mounting method and amount of heatsinking. therefore, thermal equilibrium conditions have to be defined before meaningful correlation can exist. normalized v z curves are shown for four package styles and for three to five voltage ratings per package. pulse widths from 1 ms up to 100 seconds were used to arrive at or near thermal equilibrium for all packages with a given method of mounting. mounting there are five conditions that can affect the correlation of v z measurements and are: 1) instrumentation, 2) t a , 3) i zt time, 4) p d and 5) mounting. the importance of the first four conditions is obvious but the last one, mounting, can make the difference between good and poor correlation. the mounting can have a very important part in v z correlation as it controls the amount of heat and rate of heat removal from the diode by the mass and material in contact with the diode package. two glass axial lead packages (do-35 and do-41), curves (figures 5 and 6) were measured with standard grayhill clips and a modified version of the grayhill clips to permit lead length adjustment. test circuit the test circuit (figure 8) consists of standard cmos logic for pulse generation, inverting and delaying. the logic drives three bipolar transistors for generation of the power pulse for i zt . v z is fed into an unique sample and hold (s/h) circuit consisting of two high input impedance operational amplifiers and a field effect transistor switch. for greater accuracy in v z measurements using a single pulse test current, the fet switch is double pulsed. double pulsing the fet switch for charging the s/h capacitor increases accuracy of the charge on the capacitor as the second pulse permits charging the capacitor closer to the final value of v z . the timing required for the two pulse system is shown in waveform g-3c whereby the initial sample pulse is delayed from time zero by a fixed 100 m s to allow settling time and the second pulse is variable in time to measure the analog input at that particular point. the power pulse (waveform g-2d) must also encompass the second sample pulse.
http://onsemi.com 440 to generate these waveforms, four time delay monostable multivibrators (mv) are required. also, an astable mv, is required for free-running operation; single pulsing is simply initiated by a push-button switch s1. all of the pulse generators are fashioned from two input, cmos nor gates; thus three quad gate packages (mc14001) are required. gates 1a and 1b form a classical cmos astable mv clock and the other gates (with the exception of gate 2d) comprise the two input nor gate configured monostable mv's. the pulse width variable delay output (gate 1d) positions the second sample pulse and also triggers the 100 m s delay mv and the 200 m s extended power pulse mv, the respective positive going outputs from gates 3a and 2c are diode nor'ed to trigger the sample gate mv whose output will consequently be the two sample pulses. these pulses then turn on the pnp transistor q1 level translator and the following s/h n-channel fet series switch q2. op amps u4 and u5, configured as voltage followers, respectively provide the buffered low output impedance drive for the input and output of the s/h. finally, the pulse extended power gate is derived by noring (gate 2d) the pulse width output (gate 1d) with the 200 m s mv output (gate 2c). this negative aging gate then drives the power amplifier, which, in turn, powers the d.u.t. the power amplifier configuration consists of cascaded transistors q3q5, scaled for test currents up to 2 a. push button switch (s4) is used to discharge the s/h capacitor. to adjust the zero control potentiometer, ground the non-inverting input (pin 3) of u4 and discharge the s/h capacitor. testing the voltage v cc , should be about 50 volts higher than the d.u.t. and with r c selected to limit the i zt pulse to a value making v zt i zt = 1/4 p d (max), thus insuring a good current source. all testing was performed at a normal room temperature of 25 c. a single pulse (manual) was used and at a low enough rate that very little heat remained from the previous pulse. the pulse width mv (1c and 1d) controls the width of the test pulse with a selector switch s3 (see table 1 for capacitor values). fixed widths in steps of 1, 3 and 5 from 1 ms to 10 seconds in either a repetitive mode or single pulse is available. for pulse widths greater than 10 seconds, a stop watch was used with push button switch (s1) and with the mode switch (s2) in the > 10 seconds position. for all diodes with v z greater than about 6 volts a resistor voltage divider is used to maintain an input of about 6 v to the first op amp (u4) so as not to overload or saturate this device. the divider consists of r5 and r6 with r6 being 10 k w and r5 is selected for about a 6 v input to u4. precision resistors or accurate known values are required for accurate voltage readout. table 1. s3 e pulse width switch position *c( m f) t(ms) 1 2 3 4 5 6 7 8 9 10 11 12 13 0.001 0.004 0.006 0.01 0.04 0.06 0.1 0.4 0.6 1.0 1.2 6.0 10 1 3 5 10 30 50 100 300 500 1k 3k 5k 10k *approximate values using curves normalized v z versus i zt pulse width curves are shown in figure 1 through 6. the type of heatsink used is shown or specified for each device package type. obviously, it is beyond the scope of this paper to show curves for every voltage rating available for each package type. the object was to have a representative showing of voltages including when available, one diode with a negative temperature coefficient (tc). these curves are actually a plot of thermal response versus time at one quarter of the rated power dissipation. with a given heatsink mounting, v z can be calculated at some pulse width other than the pulse width used to specify v z . for example, refer to figure 5 which shows normalized v z curves for the axial lead do-35 glass package. three mounting methods are shown to show how the mounting effects device heating and thus v z . curves are shown for a 3.9 v diode (1n5228b) which has a negative tc and a 12 v diode (1n5242b) having a positive tc. in figure 5, the two curves generated using the grayhill mountings are normalized to v z at te using the on semiconductor fixture. there is very little difference in v z at pulse widths up to about 10 seconds and mounting only causes a very small error in v z . the maximum error occurs at te between mountings and can be excessive if v z is specified at te and a customer measures v z at some narrow pulse width and does not use a correction factor. using the curves of figure 5, v z can be calculated at any pulse width based upon the value of v z at te which is represented by 1 on the normalized v z scale. if the 1n5242b diode is specified at 12 v 1.0% at 90 seconds which is at te, v z at 100 ms using either of the grayhill clips curves would be 0.984 of the v z value at te or 1 using the on semiconductor fixture curve. if the negative tc diode is specified at 3.9 v 1.0% at te (90 seconds), v z at 100 ms would be 1.011 of v z at te (using on semiconductor fixture curve) when using the grayhill clips curves.
http://onsemi.com 441 in using the curves of figure 5 and 6, it should be kept in mind that v z can be different at te for the three mountings because diode junction temperature can be different for each mounting at te which is represented by 1 on the v z normalized scale. therefore, when the correlation of v z between parties is attempted, they must use the same type of mounting or know what the delta v z is between the two mountings involved. the grayhill clips curves in figure 6 are normalized to the on semiconductor fixture at te as in figure 5. figures 1 through 4 are normalized to v z at te for each diode and would be used as figures 5 and 6. measurement accuracy can be affected by test equipment, power dissipation of the d.u.t., ambient temperature and accuracy of the voltage divider if used on the input of the first op-amp (u4). the curves of figures 1 through 6 are for an ambient temperature of 25 c, at other ambients, q v z has to be considered and is shown on the data sheet for the 1n5221b series of diodes. q v z is expressed in mv/ c and for the 1n5228b diode is about 2 mv/ c and for the 1n5242b, about 1.6 mv/ c. these values are multiplied by the difference in t a from the 25 c value and either subtracted or added to the calculated v z depending upon whether the diode has a negative or positive tc. general discussion the tc of zener diodes can be either negative or positive, depending upon die processing. generally, devices with a breakdown voltage greater than about 5 v have a positive tc and diodes under about 5 v have a negative tc. conclusion curves showing v z versus i zt pulse width can be used to calculate v z at a pulse width other than the one used to specify v z . a test circuit and method is presented to obtain v z with a single pulse of test current to generate v z curves of interest. references 1. al pshaenich, adouble pulsing s/h increases system accuracyo; electronics, june 16, 1983. 2. on semiconductor zener diode manual, series a, 1980.
http://onsemi.com 442 figures 1 thru 8 e conditions: single pulse, t a = 25 c, v z i zt = 1/4 p d (max) each device normalized to v z at te. axial lead packages: mounting standard grayhill clips figure 1. do-35 (glass) 500 mw device figure 2. do-41 (glass) 1 watt device figure 3. do-41 (plastic) 1.5 watt device figure 4. case 17 (plastic) 5 watt device v , zener voltage (normalized) z v z = 3.9 v 6.2 v 12 v 1.06 1.04 1.02 1 0.98 0.96 0.94 0.92 10 40 100 14 400 1k 4k 10k 40k 100k p w , pulse width (ms) 75 v 1.06 1.04 1.02 1 0.98 0.96 0.94 0.92 v , zener voltage (normalized) z 10 40 100 14 400 1k 4k 10k 40k100k p w , pulse width (ms) v z = 3.9 v 6.2 v 12 v v , zener voltage (normalized) z v z = 3.3 v 6.2 v 12 v 1.06 1.04 1.02 1 0.98 0.96 0.94 0.92 10 40 100 14 400 1k 4k 10k 40k 100k p w , pulse width (ms) v , zener voltage (normalized) z v z = 3.9 v 6 v 13 v 1.06 1.04 1.02 1 0.98 0.96 0.94 0.92 10 40 100 14 400 1k 4k 10k 40k100k p w , pulse width (ms) 68 v 150 v
http://onsemi.com 443 three mounting methods: do-35 and do-41 figure 5. do-35 (glass) 500 mw device figure 6. do-41 (glass) 1 watt device figure 7. standard grayhill clips mounting fixture 1n5242b (v z = 12 v) 1n5228b (v z = 3.9 v) grayhill clips standard, l = 11/16 on semiconductor fixture l = 1/2 mountings: modified l = 3/8 1.022 1.018 1.014 1.012 1.008 1.004 1 0.996 10 40 100 14 400 1k 4k 10k 40k 100k 0.992 0.988 0.984 0.98 0.976 0.972 0.968 v , zener v o lta g e (n o rmalized) z p w , pulse width (ms) 1.004 1 10 40 100 1 400 1k 4k 10k 40k 100k 0.992 0.988 0.984 0.98 0.976 4 0.996 mountings: grayhill clips standard, l = 11/16 modified, l = 3/8 on semiconductor fixture l = 1/2 1n4742a v z = 12 v v , zener voltage (normalized) z p w , pulse width (ms) 1.41 1.69 .78 .75 2.31 grayhill clips modified, l = 3/8 standard, l = 11/16
http://onsemi.com 444 figure 8. zener voltage double pulsing s/h test circuit 3b 3d 3c 2c 1d 0.1 +12 v 1a 1b 1c 2a 2b 3a 2d 100 100 k 22 pf 1n914 1/2 mc14001 u3 12 k 22 k 4.7 k 10 k 12 k 1 k q4 mpsa42 power amplifer r c r5 68 k 2 w dut ** q5a* mje350 r6 10 k 1n914 u4 mc1741 v in + - -12 v 0.1 m f 2n4856 sd q2 0.1 m f s4 0.1 m f -12 v 0.1 m f 0.1 m f v o = v in k zero control + 12 v 25 k v in = v in (10 k) r 5 + 10 k v in k = +12 v v cc 250 v 1n914 33 pf -12 v 10 k 22 k 47 k q1 2n3906 +12 v sample gate mv 510 pf 330 k u3 1/2 mc14001 +12 v extended powerpulse mv 1n914 47 k 47 k 0.001 m f 47 k 1n914 0.001 m f 200 m s +12 v 680 k 510 pf 27 k +12 v u3 3/4 mc14001 0.001 m f v dd 510 pf 330 k +12 v v dd +12 v 0.001 m f 27 k 100 m s delay mv 1/4 mc14001 u2 s2b 2 r1 r1 c1 v dd t 1 2.2r 1 c 1 mc14001 1n914 mode sel sw s2a 10 k one shot 0.001 m f >10 sec start sw s1 +12 v +12 v 100 k free run c2 c4 c5 c15 c3 100 k r2 5m r3 p. w. control t 2 0.6c 2 (r 2 + r 3 ) 1 s3 see table 1 pulse width mv 2 3 13 27 k timing waveforms gate g1d g2a g2c g2d g3a g3c 100 m s 100 m s 100 m s 200 m s 2n 3906 q3 + - +12 v +12 v u5 lf155j **tek current probe ** p6302/am503 1 k 12 k 68 k 2 w r c q4 *for dut currents: 200 ma i zt 2 a v cc 250 v dut q5a mje35 q5b mje 5850 v cc 250 v
http://onsemi.com 445 appendix a recommended incoming inspection procedures zener voltage testing pulsed versus thermal equilibrium this section is primarily for use of incoming inspection groups. the subject covered is the measurement of zener voltage (v z ) and the inherent difficulty of establishing correlation between supplier and buyer when using pulsed test techniques. this difficulty, in part, is due to the interpretation of the data taken from the variety of available testers and in some cases even from the same model types. it is therefore, our intent to define and reestablish a standardized method of measurement to achieve correlation no matter what test techniques are being used. this standardization will guarantee your acceptance of good product while maintaining reliable correlation. definition of terms temperature coefficient (tc): the temperature stability of zener voltages is sometimes expressed by means of the temperature coefficient (tc). this parameter is usually defined as the percent voltage change across the device per degree centigrade, or as a specific voltage change per degree centigrade. temperature changes during test are due to the self heating effects caused by the dissipation of power in the zener junction. the v z will change due to this temperature change and will exhibit a positive or negative tc, depending on the zener voltage. generally, devices with a zener voltage below five volts will have a negative tc and devices above five volts will exhibit a positive tc. thermal equilibrium (te) thermal equilibrium (te) is reached when the diode junction temperature has stabilized and no further change will occur. in thermal equilibrium, the heat generated at the junction is removed as rapidly as it is created, hence, no further temperature changes. measuring zener voltage the zener voltage, being a temperature dependent parameter, needs to be controlled for valid v z correlation. therefore, so that a common base of comparison can be established, a reliable measure of v z can only occur when all possible variables are held constant. this common base is achieved when the device under test has had sufficient time to reach thermal equilibrium (heatsinking is required to stabilize the lead or case temperature to a specified value for stable junction temperatures). the device should also be powered from a constant current source to limit changes of power dissipated and impedance. all of the above leads us to an understanding of why various pulse testers will give differing v z readings; these differences are, in part, due to the time duration of test (pulse width), duty cycle when data logging, contact resistance, tolerance, temperature, etc. to resolve all of this, one only needs a reference standard to compare their pulsed results against and then adjust their limits to reflect those differences. it should be noted that in a large percentage of applications the zener diode is used in thermal equilibrium. on semiconductor guarantees all of it's axial leaded zener products (unless otherwise specified) to be within specification ninety (90) seconds after the application of power while holding the lead temperatures at 30 1 c, 3/8 of an inch from the device body, any fixture that will meet that criteria will correlate. 30 c was selected over the normally specified 25 c because of its ease of maintenance (no environmental chambers required) in a normal room ambient. a few degrees variation should have negligible effect in most cases. hence, a moderate to large heatsink in most room ambients should suffice. also, it is advisable to limit extraneous air movements across the device under test as this could change thermal equilibrium enough to affect correlation. setting pulsed tester limits pulsed test techniques do not allow a sufficient time for zener junctions to reach te. hence, the limits need to be set at different values to reflect the v z at lower junction temperatures. since there are many varieties of test systems and possible heatsinks, the way to establish these limits is to actually measure both te and pulsed v z on a serialized sample for correlation. the following examples show typical delta changes in pulsed versus te readings. the actual values you use for pulsed conditions will depend on your tester. note, that there are examples for both positive and negative temperature coefficients. when setting the computer limits for a positive tc device, the largest difference is subtracted from the upper limit and the smallest difference is subtracted from the lower limit. in the negative coefficient example the largest change is added to the lower limit and the smallest change is added to the upper limit.
http://onsemi.com 446 on semiconductor zeners ? thermal equilibrium specifications: v z at 10 ma, 9 v minimum, 11 v maximum: (positive tc) te pulsed difference 9.53 v 9.35 v 9.46 v 9.56 v 9.50 v 9.45 v 9.38 v 9.83 v 9.49 v 9.40 v 0.08 v 0.07 v 0.08 v 0.07 v 0.10 v computer test limits: set v z max. limit at 11 v 0.10 v = 10.9 v set v z min. limit at 9 v 0.07 v = 8.93 v ? thermal equilibrium specifications: v z at 10 ma, 2.7 v minimum, 3.3 v maximum: (negative tc) te pulsed difference 2.78 v 2.84 v 2.78 v 2.86 v 2.82 v 2.83 v 2.91 v 2.84 v 2.93 v 2.87 v +0.05 v +0.07 v +0.05 v +0.07 v +0.05 v computer test limits: set v z min. limit at 2.7 v + 0.07 v = 2.77 v set v z max. limit at 3.3 v + 0.05 v = 3.35 v
http://onsemi.com 447 on semiconductor major worldwide sales offices united states alabama huntsville 2567741000 . . . . . . . . . . . . . . . . . . california irvine 9496238485 . . . . . . . . . . . . . . . . . . . . . . san jose 4083504800 . . . . . . . . . . . . . . . . . . encino 8186549040 . . . . . . . . . . . . . . . . . . . . . colorado littleton 3032565884 . . . . . . . . . . . . . . . . . . . . florida tampa 8132866181 . . . . . . . . . . . . . . . . . . . . . georgia atlanta 8887933435 . . . . . . . . . . . . . . . . . . . . illinois chicago 8474132500 . . . . . . . . . . . . . . . . . . . indiana carmel 3178489958 . . . . . . . . . . . . . . . . . . . . massachusetts boston 7813764223 . . . . . . . . . . . . . . . . . . . . michigan detroit 7349536704 . . . . . . . . . . . . . . . . . . . . . minnesota plymouth 7632492360 . . . . . . . . . . . . . . . . . . north carolina raleigh 9197855025 . . . . . . . . . . . . . . . . . . . . pennsylvania philadelphia/horsham 2159974340 . . . . . . . texas dallas 9726330881 . . . . . . . . . . . . . . . . . . . . . utah draper 8015724010 . . . . . . . . . . . . . . . . . . . . . canada ontario ottawa 6132263491 . . . . . . . . . . . . . . . . . . . . quebec st. laurent 5143332125 . . . . . . . . . . . . . . . . . international brazil sao paulo 5501130305244 . . . . . . . . . . . . . china beijing 861085182323 . . . . . . . . . . . . . . . . . chengdu 86286784078 . . . . . . . . . . . . . . . . . shenzhen 867552091128 . . . . . . . . . . . . . . . shanghai 862168756677 . . . . . . . . . . . . . . czech republic roznov 420 (0) 651667141 . . . . . . . . . . . . . . finland vantaa 358 (0) 985666460 . . . . . . . . . . . . . france paris 33 (0) 139264100 . . . . . . . . . . . . . . . germany munich 49 (0) 899308080 . . . . . . . . . . . . . . hong kong hong kong 85226890088 . . . . . . . . . . . . . . . . india bangalore 91802267272 x239 . . . . . . . . . . israel herzelia 972 (0) 99609111 . . . . . . . . . . . . . . international (continued) italy milan 39 (0) 25300951 . . . . . . . . . . . . . . . . . . japan tokyo 81357402700 . . . . . . . . . . . . . . . . . . . korea seoul 8225282700 . . . . . . . . . . . . . . . . . . . . . malaysia penang 6042269368 . . . . . . . . . . . . . . . . . . . mexico guadalajara 5236699100 . . . . . . . . . . . . . . . . philippines muntinlupa city 6328427141 . . . . . . . . . . . . puerto rico san juan 7876414100 . . . . . . . . . . . . . . . . . . singapore singapore 652981768 . . . . . . . . . . . . . . . . . . . spain madrid 34917456817 . . . . . . . . . . . . . . . . . . . sweden solna 46 (0) 850904680 . . . . . . . . . . . . . . . . . taiwan taipei 886227189961 . . . . . . . . . . . . . . . . . thailand bangkok 6626535031 . . . . . . . . . . . . . . . . . . united kingdom aylesbury 44 (0) 1296610400 . . . . . . . . . . . . . n. american technical support 18002829855 toll free
http://onsemi.com 448 on semiconductor standard document type definitions data sheet classifications a data sheet is the fundamental publication for each individual product/device, or series of products/devices, containing detai led parametric information and any other key information needed in using, designingin or purchasing of the product(s)/device(s) it describes. below are the three classifications of data sheet: product preview; advance information; and fully released technical data product preview a product preview is a summary document for a product/device under consideration or in the early stages of development. the product preview exists only until an aadvance informationo document is published that replaces it. the product preview is often used as the first section or chapter in a corresponding reference manual. the product preview displays the following disclaimer at the bottom of the first page: athis document contains information on a product under development. on semiconductor reserves the right to change or discontinue this product without notice.o advance information the advance information document is for a device that is not fully qualified, but is in the final stages of the release process , and for which production is eminent. while the commitment has been made to produce the device, final characterization and qualification may not be complete. the advance information document is replaced with the afully released technical datao document once the device/part becomes fully qualified. the advance information document displays the following disclaimer at the bottom of the first page: athis document contains information on a new product. specifications and information herein are s ubject to change without notice.o fully released technical data the fully released technical data document is for a product/device that is in full production (i.e., fully released). it replac es the advance information document and represents a part that is fully qualified. the fully released technical data document is virtu ally the same document as the product preview and the advance information document with the exception that it provides information that is unavailable for a product in the early phases of development, such as complete parametric characterization data. the fu lly released technical data document is also a more comprehensive document than either of its earlier incarnations. this document displays no disclaimer, and while it may be informally referred to as a adata sheet,o it is not labeled as such. data book a data book is a publication that contains primarily a collection of data sheets, general family and/or parametric information, application notes and any other information needed as reference or support material for the data sheets. it may also contain cross referenc e or selector guide information, detailed quality and reliability information, packaging and case outline information, etc. application note an application note is a document that contains realworld application information about how a specific on semiconductor device/product is used, or information that is pertinent to its use. it is designed to address a particular technical issue. pa rts and/or software must already exist and be available. selector guide a selector guide is a document published, generally at set intervals, that contains key lineitem, devicespecific information for particular products or families. the selector guide is designed to be a quick reference tool that will assist a customer in det ermining the availability of a particular device, along with its key parameters and available packaging options. in essence, it allows a customer to quickly aselecto a device. for detailed design and parametric information, the customer would then refer to the device's data sheet. th e master components selector guide (sg388/d) is a listing of all currently available on semiconductor devices. reference manual a reference manual is a publication that contains a comprehensive system or devicespecific descriptions of the structure and f unction (operation) of a particular part/system; used overwhelmingly to describe the functionality or application of a device, series o f devices or device category. procedural information in a reference manual is limited to less than 40 percent (usually much less). handbook a handbook is a publication that contains a collection of information on almost any give subject which does not fall into the r eference manual definition. the subject matter can consist of information ranging from a device specific design information, to system d esign, to quality and reliability information. addendum a documentation addendum is a supplemental publication that contains missing information or replaces preliminary information in the primary publication it supports. individual addendum items are published cumulatively. the addendum is destroyed upon the next revision of the primary document.
dld601/d rev. 1, mar-2001 one-gate logic one-gate logic 03/01 dld601 rev 1 dl 150 /d on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc pro ducts are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to supp ort or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees , subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regar ding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303-675-2175 or 800-344-3860 toll free usa/canada fax : 303-675-2176 or 800-344-3867 toll free usa/canada email : onlit @ hibbertco.com fax response line: 303-675-2167 or 800-344-3810 toll free usa/canada n. american technical support : 800-282-9855 toll free usa/canada europe : ldc for on semiconductor - european support german phone : (+1) 303-308-7140 (mon-fri 2:30pm to 7:00pm cet) email : onlit-german @ hibbertco.com french phone : (+1) 303-308-7141 (mon-fri 2:00pm to 7:00pm cet) email : onlit-french @ hibbertco.com english phone : (+1) 303-308-7142 (mon-fri 12:00pm to 5:00pm gmt) email : onlit @ hibbertco.com european toll-free access*: 00-800-4422-3781 *available from germany, france, italy, uk, ireland central/south america: spanish phone : 303-308-7143 (mon-fri 8:00am to 5:00pm mst) email : onlit-spanish @ hibbertco.com toll-free from mexico : dial 01-800-288-2872 for access - then dial 866-297-9322 asia/pacific : ldc for on semiconductor - asia support phone: 1 - 303-675-2121 (t-f 9:00am to 1:00pm hong kong time) toll free from hong kong & singapore: 001-800-4422-3781 email : onlit-asia @ hibbertco.com japan : on semiconductor, japan customer focus center 4-32-1 nishi-gotanda, shinagawa-ku, tokyo, japan 141-0031 phone : 81-3-5740-2700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com publication ordering information for additional information, please contact your local sales representative

▲Up To Search▲

Price & Availability of DL150D

	To Download DL150D Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .