d s 14001 rev. g-2 1 of 2 es1a - es1g es1a - es1g 1.0a surface mount super-fast rectifier features mechanical data maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified glass passivated die construction super-fast recovery time for high efficiency low forward voltage drop and high current capability surge overload rating to 30a peak ideally suited for automated assembly plastic material: ul flammability classification rating 94v-0 single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. case: molded plastic terminals: solder plated terminal - solderable per mil-std-202, method 208 polarity: cathode band or cathode notch marking: type number weight: 0.064 grams (approx.) a b c d g h e j sma dim min max a 2.29 2.92 b 4.00 4.60 c 1.27 1.63 d 0.15 0.31 e 4.80 5.59 g 0.10 0.20 h 0.76 1.52 j 2.01 2.62 all dimensions in mm characteristic symbol es1a es1b es1c es1d es1g unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 150 200 400 v rms reverse voltage v r(rms) 35 70 105 140 280 v average rectified output current @ t t = 110 c i o 1.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 30 a forward voltage drop @ i f = 0.6a @ i f = 1.0a v fm 0.90 0.98 1.25 v peak reverse current @ t a = 25 c at rated dc blocking voltage @ t a = 100 c i rm 5.0 200 a reverse recovery time (note 3) t rr 20 ns typical junction capacitance (note 2) c j 10 pf typical thermal resistance, junction to terminal (note 1) r jt 40 k/w operating and storage temperature range t j, t stg -65 to +150 c notes: 1. unit mounted on pc board with 5.0 mm 2 (0.013 mm thick) copper pad as heat sink. 2. measured at 1.0mhz and applied reverse voltage of 4.0v dc. 3. measured with i f = 0.5a, i r = 1.0a, i rr = 0.25a. see figure 5.
d s 14001 rev. g-2 2 of 2 es1a - es1g 0 10 20 30 1 10 100 i , peak for w ard surge current (a ) fsm number of cycles at 60 hz fi g . 3 sur g e current deratin g curve single half-sine-wave (jedec method) 0.1 1.0 10 100 0 40 80 120 i , inst ant aneous reverse current (a) r percent of rated peak reverse voltage (%) fi g .4 t y pical reverse characteristics t = 100 c j t = 25 c j 0 0.5 25 50 75 100 125 150 175 i , a verage rectified current (a) o t , terminal temperature ( c ) fi g . 1 forward current deratin g curve t 1.0 1 .5 50v dc approx 50 ni (non-inductive) ? 10 ni ? 1.0 ni ? oscilloscope (note 1) pulse generator (note 2) device under test t rr set time base for 50/100 ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 5 0 . ? ? fi g . 5 reverse recover y time characteristic and test circuit (+) (+) (-) (-) 0.01 0.1 1.0 10 0 0.4 0.8 1.2 1.6 i , inst ant aneous for w ard current (a) f v , instantaneous forward voltage (v) fi g .2 t y pical forward characteristics f t = 25 c j i pulse width: 300 s f es1a - es1d es1g
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