4-407 product description ordering information typical applications features functional block diagram rf micro devices, inc. 7628 thorndike road greensboro, nc 27409, usa tel (336) 664 1233 fax (336) 664 0454 http://www.rfmd.com optimum technology matching? applied si bjt gaas mesfet gaas hbt si bi-cmos sige hbt si cmos 4 general purpose amplifiers ! gainp/hbt gan hemt NDA-320-D gainp/gaas hbt mmic distributed amplifier dc to 12ghz ? narrow and broadband commercial and military radio designs ? linear and saturated amplifiers ? gain stage or driver amplifiers for mwradio/optical designs the NDA-320-D casacadable broadband gainp/gaas mmic amplifier is a low-cost, high-performance solution for high frequency rf, microwave, or optical amplification needs. this 50 ? gain block is based on a reliable hbt proprietary mmic design, providing unsurpassed perfor- mance for small-signal applications. designed with an external bias resistor, the NDA-320-D provides flexibility and stability. in addition , the NDA-320-D chip was designed with an additional ground via, providing improved thermal resistance performance. the nda-series of distributed amplifiers provide design flexi- bility by incorporating agc func tionality into their designs. ? reliable, low-cost hbt design ? 10.0db gain at 6ghz ? high p1db of +13.5dbm @ 2ghz ? fixed gain or agc operation ?50 ? i/o matched for high freq. use NDA-320-D gainp/gaas hbt mmic distributed amplifier dc to 12ghz - die only 4 rev a0 020115 package style: die
4-408 NDA-320-D rev a0 020115 4 general purpose amplifiers absolute maximum ratings parameter rating unit rf input power +20 dbm power dissipation 300 mw device current, i cc1 42 ma device current, i cc2 48 ma junction temperature, tj 200 c operating temperature -45 to +85 c storage temperature -65 to +150 c exceeding any one or a combination of these limits may cause permanent damage. parameter specification unit condition min. typ. max. overall v cc1 =+10v, v cc2 =+10v, v c1 =+4.75v, v c2 =+2.98v, i cc1 =24ma, i cc2 =40ma, z 0 =50 ? , t a =+25c small signal power gain, s21 8.5 9.5 db f=0.1ghz to 4.0ghz 10.5 db f=4.0ghz to 8.0ghz 6.0 7.0 db f=8.0ghz to 12.0ghz gain flatness + 0.6 db f=0.1ghz to 8.0ghz input and output vswr 1.45:1 f=0.1ghz to 8.0ghz 1.95:1 f=8.0ghz to 12.0ghz bandwidth, bw 12.5 ghz bw3 (3db) output power @ 1db compression 13.5 dbm f=2.0ghz 13.5 dbm f=6.0ghz 10.0 dbm f=14.0ghz noise figure, nf 5.5 db f=2.0ghz third order intercept, ip3 23.5 dbm f=2.0ghz reverse isolation, s12 -14 db f=0.1ghz to 12.0ghz device voltage, v z 3.6 4.0 4.2 v agc control voltage, v c1 4.7 v gain temperature coefficient, g t / t -0.0015 db/c mttf versus junction temperature case temperature 85 c junction temperature 113.9 c mttf >1,000,000 hours thermal resistance jc 124 c/w thermal resistance, at any temperature (in c/watt) can be estimated by the following equation: jc (c/watt)=124[t j (c)/113] suggested voltage supply: v cc1 > 4.7v, v cc2 > 5.0v caution! esd sensitive device. rf micro devices believes the furnished information is correct and accurate at the time of this printing. however, rf micro devices reserves the right to make changes to its products without notice. rf micro devices does not assume responsibility for the use of the described product(s).
4-409 NDA-320-D rev a0 020115 4 general purpose amplifiers typical bias configuration application notes related to biasing circuit, device footprint, and thermal considerations are available on request. application notes die attach the die attach process mechanically attaches the die to the circuit substrate. in addition, it electrically connects the ground to the trace on which the chip is mounted, and establishes the thermal path by which heat can leave the chip. wire bonding electrical connections to the chip are made through wire bonds. either wedge or ball bonding methods are acceptable practices for wire bonding. assembly procedure epoxy or eutectic die attach are both accept able attachment me thods. top and bottom metalliz ation are gold. conductive silver-filled epoxies are recomm ended. this procedure involves the use of epoxy to form a joint between the backside gold of the chip and the metallized ar ea of the substrate. a 150 c cure for 1 hour is ne cessary. recommended epoxy is ablebond 84-1lmi from ablestik. bonding temperature (wedge or ball) it is recommended that the heater block temperature be set to 160c10c. bias resistor selection r cc1 : for 4.7 v < v cc1 <5.0v r cc1 =0 ? for 5.0 v < v cc1 <10.0v r cc1 =v cc1 -4.7/0.024 ? r cc2 : for 5.0 v < v cc2 <10.0v r cc1 =v cc2 -2.98/0.040 ? typical bias parameters for v cc1 =v cc2 =10v: v cc1 (v) v cc2 (v) i cc1 (ma) v c1 (v) r cc1 ( ? )i cc2 (ma) v c2 (v) r cc2 ( ? ) 10 10 24 4.75 220 40 3.98 150 in out r cc2 q1 q2 v c1 r cc1 d1, blocking diode c1 1 uf v cc1 simplified schematic of distributed amplifier i cc1 v c2 v cc2 i cc2
4-410 NDA-320-D rev a0 020115 4 general purpose amplifiers chip outline drawing - NDA-320-D chip dimensions: 0.027? x 0.022? x 0.004?
4-411 NDA-320-D rev a0 020115 4 general purpose amplifiers p1db versus frequency at 25c 0.0 5.0 10.0 15.0 20.0 1.0 3.0 5.0 7.0 9.0 11.0 13.0 15.0 frequency (ghz) p1db (dbm) p out /gain versus p in at 2 ghz -5.0 0.0 5.0 10.0 15.0 20.0 -15.0 -10.0 -5.0 0.0 5.0 10.0 p in (dbm) p out (dbm), gain (db) pout (dbm) gain (db) p out /gain versus p in at 6 ghz -5.0 0.0 5.0 10.0 15.0 20.0 -15.0 -10.0 -5.0 0.0 5.0 10.0 p in (dbm) p out (dbm), gain (db) pout (dbm) gain (db) third order intercept versus frequency at 25c 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 frequency (ghz) output ip3 (dbm) gain (s21) for agc mode operation 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 frequency (ghz) s21 (dbm) 10 ma 25 ma 50 ma
4-412 NDA-320-D rev a0 020115 4 general purpose amplifiers note: the s-parameter gain results shown below include device performance as well as evaluation board and connector loss variations. the insertion losses of the evaluation board and connectors are as follows: 1ghz to 4ghz=-0.06db 5ghz to 9ghz=-0.22db 10ghz to 14ghz=-0.50db 15ghz to 20ghz=-1.08db s11 versus frequency -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 frequency (ghz) s11 (db) s12 versus frequency -20.0 -18.0 -16.0 -14.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 frequency (ghz) s12 (db) s21 versus frequency 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 frequency (ghz) s21 (db) s22 versus frequency -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 frequency (ghz) s22 (db)
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