IRGS14B40L insulated gate bipolar transistor 14a, voltage clamped 400v igbt 11-4-98 provisional 2 d pak co l l ect o r em itte r gate rg rg e min typ max units conditions v cl collector - emitter clamping voltage 370 400 430 v rg =1 kohm , ic =7a v ecav emitter - collector avalanche voltage 24 30 v ic = -10ma, 25 c v ge(th) gate - emitter threshold voltage 0.75 1.8 2.2 v ic = 1 ma i c25 continuous collector current 18 a vge = 5v, 25 c i c100 continuous collector current 14 a vge = 5v, 100 c v ge gate - emitter voltage -10 10 v t j operating junction temperature range -40 175 c v esd electrostatic votage from each pin to each of the other pins -6 6 kv c= 100pf, r = 1.5 kohms i scis25c self clamped inductive switching current 24 a 0.7mh inductance, 25 c 14 a 2.2mh inductance, 25 c 10 a 4.7mh inductance, 25 c i scis100c self clamped inductive switching current 13 a 1.5mh inductance, 150 c 7.5 a 4.7mh inductance, 150 c 5.5 a 8.7mh inductance, 150 c t sc short circuit withstand time 750 us tc = 150 c r1 gate series resistance 75 ohms r2 gate emitter resistance 20 k ohms v ce(on) collector - emitter saturation voltage 1.55 v ic= 7a, vge =5v, 25c 1.8 v ic = 10a, vge =5v, 25c r q jc thermal resistance, junction to case 1.5 o k / watt r q ja thermal resistance,junction to ambient (pcb mounted, steady state ) 40 o k / watt
irgs14 parameter min. typ. max. units conditions q g total gate charge (turn-on) i c = a q ge gate - emitter charge (turn-on) nc v cc = v see fig.8 q gc gate - collector charge (turn-on) v ge = v t d(on) turn-on delay time t r rise time t j = c t d(off) turn-off delay time i c = a, v cc = v t f fall time v ge = v, r g = w e on turn-on switching loss energy losses include "tail" e off turn-off switching loss mj see fig. 9,10,14 e ts total switching loss t sc short circuit withstand time 750 s v cc = v, t j = c v ge = v, r g = w , v cpk < v t d(on) turn-on delay time t j = c, t r rise time i c = a, v cc = v t d(off) turn-off delay time v ge = v, r g = w t f fall time energy losses include "tail" e ts total switching loss mj see fig. 11,14 l e internal emitter inductance nh measured 5mm from package c ies input capacitance v ge = v c oes output capacitance pf v cc = v see fig. 7 c res reverse transfer capacitance ? = mhz t rr diode reverse recovery time ns t j = c see fig. t j = c 14 i f = a i rr diode peak reverse recovery current a t j = c see fig. t j = c 15 v r = v q rr diode reverse recovery charge nc t j = c see fig. t j = c 16 di/dt = as di (rec)m /dt diode peak rate of fall of recovery a/s t j = c see fig. during t b t j = c 17 parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage ? v v ge = v, i c = a d v (br)ces / d t j temperature coeff. of breakdown voltage v/c v ge = v, i c = ma v ce(on) collector-to-emitter saturation voltage 1.55 i c = 7a v ge = 5v 1.8 v i c = 10a see fig. 2, 5 i c = a, t j = c v ge(th) gate threshold voltage v ce = v ge , i c = a d v ge(th) / d t j temperature coeff. of threshold voltage CCC mv/c v ce = v ge , i c = a g fe forward transconductance ? CCC CCC s v ce = v, i c = a i ces zero gate voltage collector current a v ge = v, v ce = v v ge = v, v ce = v, t j = c v fm diode forward voltage drop v i c = a see fig. 13 i c = a, t j = c i ges gate-to-emitter leakage current na v ge = v switching characteristics @ t j = 25c (unless otherwise specified) electrical characteristics @ t j = 25c (unless otherwise specified) ns ns
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