product datasheet september 7, 2007 1 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - 0 5 10 15 20 25 30 35 0246810121416 frequency (ghz) maximum gain (db) mag msg dc - 20 ghz discrete power phemt TGF2022-48 key features and performance ? frequency range: dc - 20 ghz ? > 37 dbm nominal psat ? 58% maximum pae ? 45 dbm nominal oip3 ? 13 db nominal power gain ? suitable for high re liability applications ? 4.8mm x 0.35 m power phemt ? nominal bias vd = 8- 12v, idq = 360-600ma (u nder rf drive, id rises from 360ma to 1200ma) ? chip dimensions: 0.57 x 2. 42 x 0.10 mm (0.022 x 0.095 x 0.004 in) primary applications ? point-to-point radio ? high-reliability space ? military ? base stations ? broadband wireless applications product description the triquint tgf202 2-48 is a discrete 4.8 mm phemt which operates from dc-20 ghz. the TGF2022-48 is designed using triquint?s proven standard 0.35um power phemt production process. the TGF2022-48 typically provides > 37 dbm of saturated output power with power gain of 13 db. the maximum power added efficiency is 58% which makes the tgf2022-4 8 appropriate for high efficiency applications. the TGF2022-48 is also ideally suited for point-to-point radi o, high-reliability space, and militar y applications. the TGF2022-48 has a protective surface passivation layer providing environmental robustness. lead-free and rohs compliant
product datasheet september 7, 2007 2 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - table i maximum ratings symbol parameter 1/ value notes v + positive supply voltage 12.5 v 2/ v - negative supply voltage range -5v to 0v i + positive supply current 2250 ma 2/ | i g | gate supply current 56 ma p in input continuous wave power 32 dbm 2/ p d power dissipation see note 3 2/ 3 / t ch operating channel temperature 150 c 4/ t m mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ for a median life time of 1e+6 hrs, power dissipation is limited to: p d (max) = (150 c ? tbase c) / 17.3 ( c/w) 4/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TGF2022-48 table ii dc probe characteristics (t a = 25 c, nominal) symbol parameter minimum typical maximum unit idss saturated drain current - 1440 - ma gm transconductance - 1800 - ms v p pinch-off voltage -1.5 -1 -0.5 v v bgs breakdown voltage gate-source -30 - -8 v v bgd breakdown voltage gate-drain -30 - -14 v note: for triquint?s 0.35um power phemt devices, rf breakdown >> dc breakdown
product datasheet september 7, 2007 3 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - table iii rf characterization table 1/ (t a = 25 c, nominal) symbol parameter f = 10 ghz f = 18 ghz units vd = 10v idq = 360 ma vd = 12v idq = 360 ma vd = 10v idq = 360 ma vd = 12v idq = 360 ma power tuned: psat pae gain l 2/ saturated output power power added efficiency power gain load reflection coefficient 37.9 52.4 12.9 0.870 173.9 38.6 51.9 12.9 0.857 171.8 37.1 41.5 8.3 0.911 173.9 37.7 37.0 8.0 0.917 173.4 dbm % db - efficiency tuned: psat pae gain l 2/ saturated output power power added efficiency power gain load reflection coefficient 37.3 58.3 13 0.856 169.8 36.5 56.0 13 0.858 169.5 38.3 46.0 8.5 0.930 173.3 37.1 42.5 8.3 0.94 172.8 dbm % db - oip3 output toi 46 45 46 45 dbm TGF2022-48 table iv thermal information parameter test conditions t ch ( o c) jc ( c/w) t m (hrs) jc thermal resistance (channel to backside of carrier) vd = 12 v idq = 360 ma pdiss = 4.32 w 145 17.3 1.6 e+6 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. 1/ values in this table are from measurements tak en from a 0.6mm unit phemt cell at 10 and 18 ghz 2/ optimum load impedance for maximum power or maximum pae at 10 and 18 ghz
product datasheet september 7, 2007 4 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - rgs cgs i r - + lg rg rdg cdg l s r s source source gate drain rd ld v i gmvi rds cds l out TGF2022-48 linear model for 0. 6 mm unit phemt cell upc = 0.6mm unit phemt cell gate source source drain upc unit phemt cell reference plane model parameter vd = 8v idq = 45ma vd = 8v idq = 60ma vd = 8v idq = 75ma vd = 10v idq = 45ma vd = 10v idq = 60ma vd = 12v idq = 45ma units rg 0.22 0.23 0.24 0.23 0.24 0.24 rs 0.40 0.41 0.41 0.46 0.45 0.50 rd 0.51 0.52 0.52 0.50 0.50 0.48 gm 0.195 0.202 0.202 0.188 0.195 0.183 s cgs 1.50 1.63 1.70 1.64 1.73 1.71 pf ri 1.65 1.59 1.58 1.72 1.64 1.73 cds 0.115 0.115 0.116 0.114 0.115 0.114 pf rds 243.14 247.08 255.12 278.72 279.31 302.49 cgd 0.072 0.066 0.063 0.064 0.061 0.060 pf tau 5.94 6.23 6.51 6.85 6.95 7.36 ps ls 0.001 0.001 0.001 0.001 0.001 0.001 nh lg 0.108 0.108 0.108 0.108 0.108 0.108 nh ld 0.121 0.120 0.118 0.118 0.118 0.117 nh rgs 5110 5140 8310 5110 5420 5120 rgd 57700 64800 74400 79400 82900 82300
product datasheet september 7, 2007 5 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - TGF2022-48 linear model for 4.8mm phemt l - via = 0.0135 nh (9x) upc upc upc upc upc upc upc upc 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 gate pads (8x) drain pads (8x)
product datasheet september 7, 2007 6 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - TGF2022-48 unmatched s-paramete rs for 4.8 mm phemt bias conditions: vd = 12v, idq = 360ma note: the s-parameters are calculated by connecting nodes 1-8 together, and nodes 9-16 together to form a 2-port network. frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang (ghz) db deg db deg db deg db deg 0.5 -0.325 -154.69 22.299 100.31 -36.239 12.13 -4.759 -167.50 1 -0.288 -167.22 16.442 90.63 -36.078 4.39 -4.554 -171.69 1.5 -0.280 -171.50 12.929 85.31 -36.075 0.99 -4.470 -172.31 2 -0.276 -173.66 10.408 81.12 -36.105 -1.27 -4.388 -172.05 2.5 -0.272 -174.97 8.431 77.41 -36.153 -3.07 -4.296 -171.49 3 -0.270 -175.86 6.797 73.96 -36.214 -4.61 -4.191 -170.82 3.5 -0.267 -176.50 5.399 70.66 -36.287 -5.99 -4.076 -170.14 4 -0.264 -176.99 4.170 67.48 -36.371 -7.25 -3.953 -169.49 4.5 -0.260 -177.38 3.071 64.39 -36.464 -8.42 -3.822 -168.89 5 -0.257 -177.70 2.072 61.39 -36.567 -9.50 -3.687 -168.37 5.5 -0.253 -177.97 1.154 58.45 -36.678 -10.51 -3.548 -167.91 6 -0.250 -178.21 0.303 55.59 -36.797 -11.45 -3.409 -167.54 6.5 -0.246 -178.41 -0.494 52.79 -36.922 -12.32 -3.270 -167.23 7 -0.242 -178.60 -1.244 50.05 -37.054 -13.12 -3.133 -167.00 7.5 -0.238 -178.77 -1.953 47.37 -37.192 -13.85 -2.998 -166.83 8 -0.234 -178.92 -2.627 44.75 -37.334 -14.53 -2.867 -166.72 8.5 -0.230 -179.06 -3.270 42.19 -37.481 -15.13 -2.739 -166.67 9 -0.226 -179.20 -3.886 39.69 -37.632 -15.68 -2.616 -166.66 9.5 -0.222 -179.33 -4.477 37.24 -37.786 -16.16 -2.498 -166.70 10 -0.219 -179.45 -5.045 34.84 -37.942 -16.58 -2.385 -166.78 10.5 -0.215 -179.57 -5.592 32.50 -38.101 -16.94 -2.276 -166.90 11 -0.211 -179.68 -6.121 30.21 -38.261 -17.25 -2.173 -167.04 11.5 -0.208 -179.79 -6.632 27.97 -38.423 -17.49 -2.074 -167.21 12 -0.204 -179.89 -7.127 25.78 -38.586 -17.69 -1.981 -167.40 12.5 -0.201 -180.00 -7.607 23.64 -38.748 -17.82 -1.892 -167.61 13 -0.198 179.90 -8.073 21.54 -38.911 -17.90 -1.807 -167.83 13.5 -0.195 179.81 -8.525 19.48 -39.074 -17.93 -1.727 -168.07 14 -0.192 179.71 -8.965 17.47 -39.236 -17.91 -1.651 -168.32 14.5 -0.189 179.61 -9.392 15.50 -39.397 -17.84 -1.579 -168.58 15 -0.186 179.52 -9.808 13.56 -39.557 -17.73 -1.510 -168.85 15.5 -0.184 179.43 -10.214 11.66 -39.716 -17.56 -1.446 -169.12 16 -0.181 179.34 -10.609 9.80 -39.872 -17.35 -1.384 -169.40 16.5 -0.179 179.25 -10.994 7.97 -40.027 -17.10 -1.326 -169.68 17 -0.176 179.16 -11.370 6.18 -40.180 -16.80 -1.271 -169.96 17.5 -0.174 179.07 -11.737 4.42 -40.330 -16.47 -1.219 -170.24 18 -0.172 178.99 -12.096 2.69 -40.478 -16.09 -1.169 -170.53 18.5 -0.170 178.90 -12.446 0.98 -40.623 -15.68 -1.122 -170.81 19 -0.168 178.82 -12.789 -0.69 -40.765 -15.23 -1.077 -171.10 19.5 -0.166 178.73 -13.124 -2.34 -40.904 -14.74 -1.034 -171.38 20 -0.164 178.65 -13.451 -3.97 -41.039 -14.22 -0.994 -171.66 20.5 -0.162 178.57 -13.772 -5.57 -41.172 -13.66 -0.955 -171.95 21 -0.161 178.48 -14.087 -7.14 -41.300 -13.08 -0.919 -172.22 21.5 -0.159 178.40 -14.394 -8.70 -41.425 -12.46 -0.884 -172.50 22 -0.157 178.32 -14.696 -10.23 -41.547 -11.82 -0.851 -172.78 22.5 -0.156 178.24 -14.992 -11.75 -41.664 -11.14 -0.819 -173.05 23 -0.155 178.16 -15.283 -13.24 -41.778 -10.44 -0.789 -173.32 23.5 -0.153 178.08 -15.568 -14.72 -41.887 -9.72 -0.760 -173.59 24 -0.152 178.01 -15.848 -16.18 -41.992 -8.97 -0.733 -173.85 24.5 -0.151 177.93 -16.123 -17.63 -42.093 -8.20 -0.706 -174.12 25 -0.149 177.85 -16.393 -19.05 -42.189 -7.41 -0.681 -174.38 25.5 -0.148 177.77 -16.659 -20.47 -42.281 -6.61 -0.657 -174.63 26 -0.147 177.70 -16.920 -21.87 -42.369 -5.78 -0.634 -174.89
product datasheet september 7, 2007 7 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handing, assembly and test. mechanical drawing TGF2022-48 units: millimeters (inches) thickness: 0.100 (0.004) chip edge to bond pad dimensions are shown to center of bond pad chip size tolerance: +/- 0.051 (0.002) gnd is backside of mmic bond pads #1-8: (gate) 0.090 x 0.090 (0.004 x 0.004) bond pads #9-16: (drain) 0.090 x 0.090 (0.004 x 0.004) bond pad #17: (vg*) 0.090 x 0.090 (0.004 x 0.004) bond pad #18: (vg*) 0.090 x 0.090 (0.004 x 0.004) *note: bond pads #17 & 18 are alternate gate pads that can be used for paralleling fets. 0.000 [0.000] 2.418 [0.095] 2.063 [0.081] 1.912 [0.075] 1.881 [0.074] 1.497 [0.059] 1.689 [0.066] 1.305 [0.051] 1.113 [0.044] 0.921 [0.036] 0.729 [0.029] 0.537 [0.021] 0.356 [0.014] 0.506 [0.020] 0.000 [0.000] 0.565 [0.022] 0.333 [0.013] 0.119 [0.005] 0.445 [0.018] 0.333 [0.013] 0.445 [0.018] gate drain 116 215 13 4 14 3 6 5 12 11 8 7 10 9 17 18
product datasheet september 7, 2007 8 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - TGF2022-48 reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 c for 30 sec ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007-inch wire. ? maximum stage temperature is 200 c. assembly process notes
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