mar.2002 ee hr gun eun gvn evn gup u v eup gvp evp g f p b d j c m l l s(4 - mounting holes) 4 - m4 nuts tab#110 t=0.5 q j n k g f eh v w v u x t a gup eup gun eun u p n gvp evp gvn evn v t c measured point t c measured point dimensions inches millimeters a 2.83 72.0 b 2.17 0.01 55 0.25 c 3.58 91.0 d 2.91 0.01 74.0 0.25 e 0.43 11.0 f 0.79 20.0 g 0.69 17.5 h 0.75 19.1 j 0.39 10.0 k 0.41 10.5 l 0.05 1.25 dimensions inches millimeters m 0.74 18.7 n 0.02 0.5 p 1.55 39.3 q 0.63 16.0 r 0.57 14.4 s 0.22 dia. 5.5 dia. t 0.32 8.1 u 1.02 26.0 v 0.59 15.0 w 0.20 5.0 x 1.61 41.0 description: mitsubishi igbt modules are de- signed for use in switching applica- tions. each module consists of four igbts in an h-bridge configura- tion, with each transistor having a reverse-connected super-fast re- covery free-wheel diode. all com- ponents and interconnects are iso- lated from the heat sinking base- plate, offering simplified system assembly and thermal manage- ment. features: low drive power low v ce(sat) discrete super-fast recovery free-wheel diode high frequency operation isolated baseplate for easy heat sinking applications: ac motor control motion/servo control ups welding power supplies ordering information: example: select the complete module number you desire from the table - i.e. CM50BU-24H is a 1200v (v ces ), 50 ampere four- igbt module. current rating v ces type amperes volts (x 50) cm 50 24 mitsubishi igbt modules CM50BU-24H high power switching use insulated type outline drawing and circuit diagram
mar.2002 absolute maximum ratings, t j = 25 c unless otherwise specified symbol ratings units junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c collector-emitter voltage (g-e short) v ces 1200 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 25 c) i c 50 amperes peak collector current (t j 150 c) i cm 100* amperes emitter current** (t c = 25 c) i e 50 amperes peak emitter current** i em 100* amperes maximum collector dissipation (t c = 25 c) p c 400 watts mounting torque, m4 main terminal 1.3 ~ 1.7 n ?m mounting torque, m5 mounting 2.5 ~ 3.5 n ?m weight 390 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms * pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). static electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v 1 ma gate leakage voltage i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 5ma, v ce = 10v 4.5 6 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 50a, v ge = 15v, t j = 25 c 2.9 3.7 volts i c = 50a, v ge = 15v, t j = 125 c 2.85 volts total gate charge q g v cc = 600v, i c = 50a, v ge = 15v 187 nc emitter-collector voltage* v ec i e = 50a, v ge = 0v 3.2 volts * pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. dynamic electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units input capacitance c ies 7.5 nf output capacitance c oes v ce = 10v, v ge = 0v 2.6 nf reverse transfer capacitance c res 1.5 nf resistive turn-on delay time t d(on) v cc = 600v, i c = 50a, 80 ns load rise time t r v ge1 = v ge2 = 15v, 200 ns switch turn-off delay time t d(off) r g = 6.3 ? , resistive 150 ns times fall time t f load switching operation 350 ns diode reverse recovery time t rr i e = 50a, di e /dt = -100a/ s 300 ns diode reverse recovery charge q rr i e = 50a, di e /dt = -100a/ s 0.28 c thermal and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) q per igbt 1/4 module 0.31 c/w thermal resistance, junction to case r th(j-c) d per fwdi 1/4 module 0.7 c/w contact thermal resistance r th(c-f) per module, thermal grease applied 0.025 c/w mitsubishi igbt modules CM50BU-24H high power switching use insulated type
mar.2002 mitsubishi igbt modules CM50BU-24H high power switching use insulated type collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0246810 60 20 0 v ge = 20v 12 11 8 t j = 25 o c 40 80 100 10 9 15 gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 048121620 80 60 40 20 0 100 v ce = 10v t j = 25 c t j = 125 c collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 5 020406080 4 3 2 1 0 100 v ge = 15v t j = 25 c t j = 125 c gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 048121620 8 6 4 2 0 t j = 25 c i c = 20a i c = 100a i c = 50a 1.0 1.5 2.0 2.5 3.5 3.0 4.0 10 0 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 2 emitter current, i e , (amperes) t j = 25 c collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 -1 10 0 10 2 10 2 10 1 10 0 10 -2 10 -1 v ge = 0v 10 1 c oes c res c ies collector current, i c , (amperes) 10 3 10 0 10 1 10 2 10 2 10 1 10 0 t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 6.3 ? t j = 125 c t f switching time, (ns) half-bridge switching characteristics (typical) emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 0 10 1 10 2 10 2 10 1 t rr i rr di/dt = -100a/ sec t j = 25 c 10 2 10 1 10 0 reverse recovery current, i rr , (amperes) gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0 50 150 100 15 10 5 0 250 200 v cc = 600v v cc = 400v i c = 50a
mar.2002 mitsubishi igbt modules CM50BU-24H high power switching use insulated type time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics ( igbt) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.31 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3 time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (fwdi) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.7 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3
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