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DG858BW45 1/19 DG858BW45 repetitive peak off-state voltage v drm v features double side cooling high reliability in service high voltage capability fault protection without fuses high surge current capability turn-off capability allows reduction in equipment size and weight. low noise emission reduces acoustic cladding necessary for environmental requirements applications variable speed a.c. motor drive inverters (vsd-ac) uninterruptable power supplies high voltage converters choppers welding induction heating dc/dc converters key parameters i tcm 3000a v drm 4500v i t(av) 1180a dv d /dt 1000v/ s di t /dt 300a/ s package outline type code: w. see package details for further information. voltage ratings 4500 conditions type number t vj = 125 o c, i dm = 100ma, i rrm = 50ma repetitive peak reverse voltage v rrm v 16 current ratings symbol parameter conditions max. i tcm t hs = 80 o c. double side cooled, half sine 50hz v d = 66% v drm , t j = 125 o c, di gq /dt = 40a/ s, cs = 3 f rms on-state current a a a 3000 1180 1850 units repetitive peak controllable on-state current t hs = 80 o c. double side cooled, half sine 50hz i t(rms) i t(av) mean on-state current figure 1. package outline DG858BW45 gate turn-off thyristor replaces july 1999 version, ds4096-3.0 ds4096-4.0 january 2000
DG858BW45 2/19 surge ratings conditions 20.0 2.0 x 10 6 ka a 2 s surge (non-repetitive) on-state current i 2 t for fusing 10ms half sine. t j = 125 o c 10ms half sine. t j =125 o c di t /dt critical rate of rise of on-state current 300 130 v/ s max. units rate of rise of off-state voltage dv d /dt 1000 v/ s to 66% v drm ; v rg = -2v, t j = 125 o c i tsm symbol parameter i 2 t v d = 3000v, i t = 3000a, t j = 125 o c, i fg > 40a, rise time > 1.0 s a/ s to 66% v drm ; r gk 1.5 ? , t j = 125 o c gate ratings symbol parameter conditions v units max. 16 20 min. - 20 - peak reverse gate voltage peak forward gate current average forward gate power peak reverse gate power rate of rise of reverse gate current minimum permissable on time minimum permissable off time 24 60 - 50 20 - - s 100 100 v rgm this value maybe exceeded during turn-off i fgm p fg(av) p rgm di gq /dt t on(min) t off(min) s a/ s kw w a thermal and mechanical data symbol parameter conditions max. min. r th(c-hs) contact thermal resistance r th(j-hs) - -0.03 - 0.0021 o c/w per contact cathode side cooled double side cooled units - 0.011 o c/w anode side cooled o c/w 0.017 virtual junction temperature t op /t stg operating junction/storage temperature range - clamping force -40 125 44.0 36.0 -40 kn o c/w clamping force 40.0kn with mounting compound dc thermal resistance - junction to heatsink surface t vj 125 o c o c - - peak stray inductance in snubber circuit i t = 3000a, v d = v drm , t j = 125?c, di/ gq = 40a/ s, cs = 3.0 f l s 200 nh
DG858BW45 3/19 characteristics conditions peak reverse current on-state voltage v tm peak off-state current reverse gate cathode current 50 - turn-on energy gate trigger current delay time rise time fall time gate controlled turn-off time turn-off energy storage time turn-off gate charge total turn-off gate charge peak reverse gate current - 12000 v rgm = 16v, no gate/cathode resistor c i t = 3000a, v dm = v drm snubber cap cs = 3.0 f, di gq /dt = 40a/ s t j = 125 o c unless stated otherwise symbol parameter i dm i rrm v gt gate trigger voltage i gt i rgm e on t d t r e off t gs t gf t gq q gq q gqt i gqm min. max. units - 4.0 v v drm = 4500v, v rg = 0v - 100 ma at v rrm -50ma v d = 24v, i t = 100a, t j = 25 o c - 1.2 v v d = 24v, i t = 100a, t j = 25 o c - 4.0 a ma mj 2700 - v d = 2000v i t = 3000a, di t /dt = 300a/ s i fg = 40a, rise time < 1.0 s s 2.0 - - 6.0 s - 13500 mj - 25.0 s s 2.5 - s 27.5 - - 24000 c - 950 a at 4000a peak, i g(on) = 10a d.c.
DG858BW45 4/19 curves -50 -25 0 25 50 75 100 125 0.5 1.0 1.5 2.0 gate trigger voltage v gt - (v) 12.5 10.0 7.5 5.0 2.5 gate trigger current i gt - (a) junction temperature t j - ( ? c) v gt i gt 0 150 2.5 0 figure 2. maximum gate trigger voltage/current vs junction temperature 1.5 2.0 2.5 3.0 3.5 instantaneous on-state voltage v tm - (v) 1000 2000 3000 4000 instantaneous on-state current i t - (a) measured under pulse conditions. i g(on) = 10a half sine wave 10ms 0 4.0 1.0 t j = 125 ? c t j = 25 ? c figure 3. on-state characteristics
DG858BW45 5/19 0 2.0 4.0 6.0 snubber capacitance c s - (f) 1000 2000 4000 3000 maximum permissible turn-off current i tcm - (a) conditions: t j = 125 ? c, v dm = v drm di gq /dt = 40a/s 1.0 3.0 5.0 3500 2500 1500 figure 4. maximum dependence of i tcm on cs 0 0.005 0.010 0.015 0.001 0.01 0.1 1.0 10 time - (s) thermal impedance - ? c/w dc 100 figure 5. maximum (limit) transient thermal impedance - double side cooled 0 10 20 30 0.0001 0.001 0.01 0.1 1.0 pulse duration - (s) peak half sine wave on-state current - (ka) 40 50 figure 6. surge (non-repetitive) on-state current vs time
DG858BW45 6/19 0 500 1000 1500 60 70 80 90 100 110 maximum permissible case temperature - ( ? c) mean on-state current i t ( av ) - (a) 0 500 1000 1500 2000 2500 3000 3500 4000 mean on-state power dissipation - (w) 180 ? 120 ? 60 ? 30 ? dc conditions; i g(on) = 10a 120 130 4500 5000 5500 figure 7. steady state rectangular wave conduction loss - double side cooled 0 400 800 80 90 100 maximum permissible case temperature - ( ? c) mean on-state current i t(av) - (a) 0 500 1000 1500 2000 2500 3000 mean on-state power dissipation- (w) 180 ? 120 ? 60 ? 30 ? 90 ? conditions; i g(on) = 10a 1200 110 120 130 200 600 1000 3500 4000 figure 8. steady state sinusoidal wave conduction loss - double side cooled
DG858BW45 7/19 0 500 1000 1500 2000 2500 on-state current i t - (a) 0 500 1000 1500 2000 2500 3000 3500 4000 turn-on energy loss e on - (mj) 3000 v d = 3000v v d = 2000v v d = 1000v conditions: t j = 25 ? c i fgm = 40a c s = 3f r s = 10 ohms di t /dt = 300a/s di fg /dt = 40a/s 4500 figure 9. turn-on energy vs on-state current 0 1020304050607080 peak forward gate current i fgm - (a) 0 1000 2000 3000 4000 5000 6000 7000 8000 turn-on energy loss e on - (mj) conditions: i t = 3000a, t j = 25 ? c, c s = 3.0 f, r s = 10 ohms di t /dt = 300a/ s, di fg /dt = 40a/ s v d = 3000v v d = 2000v v d = 1000v figure 10. turn-on energy vs peak forward gate current
DG858BW45 8/19 0 500 1000 1500 2000 3000 2500 on-state current i t - (a) 0 500 1000 1500 2000 2500 3000 turn-on energy loss e on - (mj) conditions: t j = 125 ? c i fgm = 40a c s = 3.0f r s = 10 ohms di t /dt = 300a/s di fg /dt = 40a/s v d = 1000v 3500 4000 4500 v d = 2000v v d = 3000v figure 11. turn-on energy vs on-state current 0 1020304050607080 peak forward gate current i fgm - (a) 0 1000 2000 3000 4000 5000 6000 7000 8000 turn-on energy loss e on - (mj) 9000 10000 conditions: i t = 3000a t j = 125 ? c c s = 3.0f r s = 10 ohms di t /dt = 300a/s di fg /dt = 40a/s v d = 2250v v d = 2000v v d = 1000v figure 12. turn-on energy vs peak forward gate current 50 100 150 200 250 300 350 rate of rise of on-state current di t /dt - (a/s) 0 1000 2000 3000 4000 turn-on energy loss e on - (mj) conditions: i t = 3000a t j = 125 ? c c s = 3.0f r s = 10 ohms i fgm = 40a di fg /dt = 40a/s 5000 v d = 1000v 4500 3500 2500 1500 500 v d = 2000v v d = 3000v figure 13. turn-on energy vs rate of rise of on-state current
DG858BW45 9/19 0 500 1000 1500 2000 3000 2500 on-state current i t - (a) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 turn-on delay time and rise time - (s) conditions: t j = 125 ? c, i fgm = 40a c s = 3.0f, r s = 10 ohms, di t /dt = 300a/s, v d = 2000v t d t r fig.ure 14. delay and rise time vs on-state current 0 1020304050607080 peak forward gate current i fgm - (a) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 turn-on delay time and rise time - ( s) 10.0 11.0 conditions: i t = 3000a t j = 125 ? c c s = 3.0 f r s = 10 ohms di t /dt = 300a/ s di fg /dt = 40a/ s v d = 2000v t d t r 12.0 figure 15. delay and rise time vs peak forward gate current
DG858BW45 10/19 0 500 1000 1500 2000 3000 2500 on-state current i t - (a) 0 1000 2000 3000 4000 5000 6000 turn-off energy loss e off - (mj) conditions: t j = 25 ? c c s = 3.0f di gq /dt = 40a/s 7000 8000 a: v dm = 100% v drm b: v dm = 75% v drm c: v dm = 50% v drm 9000 a b c a figure 16. turn-off energy loss vs on-state current 20 25 30 35 40 45 50 55 60 rate of rise of reverse gate current di gq /dt- (a/ s) 4000 4500 5000 5500 6000 6500 7000 7500 8000 turn-off energy per pulse e off - (mj) conditions: i t = 3000a t j = 25 ? c c s = 3.0 f 8500 9000 v dm = 100% v drm v dm = 75% v drm v dm = 50% v drm figure 17. turn-off energy vs rate of rise of reverse gate current
DG858BW45 11/19 0 500 1000 1500 2000 2500 3000 on-state current i t - (a) 0 2000 4000 6000 8000 10000 12000 turn-off energy loss e off - (mj) conditions: t j = 125 ? c c s = 3.0f di gq /dt = 40a/s a: v dm = 100% v drm b: v dm = 75% v drm c: v dm = 50% v drm 14000 a b c figure 18. turn-off energy vs on-state current 20 25 30 35 40 45 50 55 60 rate of rise of reverse gate current di gq /dt- (a/s) 6000 8000 10000 12000 14000 turn-off energy per pulse e off - (mj) conditions: i t = 3000a t j = 125 ? c c s = 3.0f 13000 11000 9000 7000 v dm = 100% v drm v dm = 75% v drm v dm = 50% v drm figure 19. turn-off energy loss vs rate of rise of reverse gate current
DG858BW45 12/19 14000 0 500 1000 1500 2000 2500 3000 on-state current i t - (a) 0 2000 4000 6000 8000 10000 12000 turn-off energy per pulse e off - (mj) conditions: t j = 125 ? c v dm = v drm di gq /dt = 40a/s c s = 2.0f c s = 2.5f c s = 3.0f c s = 4.0f 16000 3500 figure 20. turn-off energy vs on-state current 0 500 1000 1500 2000 2500 3000 on-state current i t - (a) 2.5 7.5 12.5 17.5 gate storage time t gs - (s) conditions: c s = 3.0f di gq /dt = 40a/s t j = 25 ? c t j = 125 ? c 22.5 5.0 10.0 15.0 20.0 25.0 figure 21. gate storage time vs on-state current
DG858BW45 13/19 20 25 30 35 40 45 50 55 60 rate of rise of reverse gate current di gq /dt - (a/s) 15.0 20.0 25.0 30.0 35.0 gate storage time t gs - (s) 40.0 conditions: i t = 3000a c s = 3.0f t j = 125 ? c t j = 25 ? c figure 22. gate storage time vs rate of rise of reverse gate current 0 500 1000 1500 2000 2500 3000 on-state current i t - (a) 1.0 2.0 3.0 gate fall time t gf - (s) conditions: c s = 3.0f di gq /dt = 40a/s t j = 25 ? c t j = 125 ? c 0 figure 23. gate fall time vs on-state current
DG858BW45 14/19 20 25 30 35 40 45 50 55 60 rate of rise of reverse gate current di gq /dt - (a/s) 1.0 1.5 2.0 2.5 3.0 gate fall time t gf - (s) conditions: i t = 3000a c s = 3.0f t j = 125 ? c t j = 25 ? c figure 24. gate fall time vs rate of rise of reverse gate current 0 500 1000 1500 2000 2500 3000 on-state current i t - (a) 200 400 600 800 peak reverse gate current i gqm - (a) conditions: c s = 3.0f di gq /dt = 40a/s t j = 125 ? c 1000 900 700 500 300 t j = 25 ? c figure 25. peak reverse gate current vs on-state current
DG858BW45 15/19 20 25 30 35 40 45 50 55 60 rate of rise of reverse gate current di gq /dt - (a/s) 600 700 800 900 peak reverse gate current i gqm - (a) 1000 conditions: i t = 3000a c s = 3.0f t j = 125 ? c t j = 25 ? c figure 26. reverse gate current vs rate of rise of reverse gate current 0 500 1000 1500 2000 2500 3000 on-state current i t - (a) 0 4000 8000 12000 total turn-off gate charge q gq - (c) conditions: c s = 3.0f di gq /dt = 40a/s t j = 125 ? c t j = 25 ? c 2000 6000 10000 figure 27. turn-off gate charge vs on-state current
DG858BW45 16/19 20 25 30 35 40 45 50 55 60 rate of rise of reverse gate current di gq /dt - (a/s) 7000 9000 11000 13000 15000 turn-off gate charge q gq - (c) conditions: i t = 3000a c s = 3.0f t j = 125 ? c t j = 25 ? c 8000 10000 12000 14000 figure 28. turn-off gate charge vs rate of rise of reverse gate current 0 500 1000 rate of rise of off-state voltage dv/dt - (v/ s) gate cathode resistance r gk - (ohms) v d = 3000v v d = 2250v t j = 125 ? c 0.1 1.0 10 100 1000 figure 29. rate of rise of off-state voltage vs gate cathode resistance
DG858BW45 17/19 anode voltage and current v d 0.9v d 0.1v d t d t r t gt i t v dp 0.9i t i tail dv d /dt v d v dm gate voltage and current t gs t gf t w1 v fg i fg 0.1i fg di fg /dt 0.1i gq q gq 0.5i gqm i gqm v rg v (rg)br i g(on) t gq recommended gate conditions: i tcm = 3000a i fg = 40a i g(on) = 10a d.c. t w1(min) = 20 s i gqm = 950a di gq /dt = 40a/ s q gq = 12000 c v rg(min) = 2v v rg(max) = 16v these are recommended d y nex semiconductor conditions. other conditions are p ermitted figure 30. general switching waveforms
DG858BW45 18/19 package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. 72 max 84.6 nom 84.6 nom 120 max 27.0 25.5 cathode anode gate connector 3.0 auxiliary cathode connector 3.0 12 ? 2 holes 3.6 x 2.0 deep (one in each electrode) nominal weight: 1700g clamping force: 40kn 10% lead length: 600mm package outine type code: w
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 sales offices benelux, italy & switzerland: tel: +33 (0)1 64 66 42 17. fax: +33 (0)1 64 66 42 19. france: tel: +33 (0)2 47 55 75 52. fax: +33 (0)2 47 55 75 59. germany, northern europe, spain & rest of world: tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 north america: tel: (440) 259-2060. fax: (440) 259-2059. tel: (949) 733-3005. fax: (949) 733-2986. these offices are supported by representatives and distributors in many countries world-wide. ?dynex semiconductor 2003 technical documentation ?not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regard ing the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information con cerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully deter mine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any me dical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com datasheet annotations: dynex semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. the annota tions are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product is in design and development. the datasheet represents the product as it is understood but details may change. advance information: the product design is complete and final characterisation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification.

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