DG858DW45 1/7 features double side cooling high reliability in service high voltage capability fault protection without fuses high surge current capability turn-off capability allows reduction in equipment size and weight. low noise emission reduces acoustic cladding necessary for environmental requirements applications variable speed a.c. motor drive inverters (vsd-ac). uninterruptable power supplies high voltage converters. choppers. welding. induction heating. dc/dc converters. key parameters i tcm 3000a v drm 4500v i t(av) 1100a dv d /dt 750v/ s di t /dt 300a/ s fig.1 package outline package outline type code : w see package details for further information. voltage ratings 4500 DG858DW45 conditions type number t vj = 125 o c, i drm =100ma, i rrm = 50ma repetitive peak off-state voltage v drm v repetitive peak reverse voltage v rrm v 16 current ratings symbol parameter conditions max. i tcm v d = v drm , t j = 125 o c, di gq /dt = 40a/ s, cs = 4.0 f, l s 200nh a 3000 units repetitive peak controllable on-state current t hs = 80 o c. double side cooled, half sine 50hz. rms on-state current a a 1100 1720 t hs = 80 o c. double side cooled, half sine 50hz. i t(rms) i t(av) mean on-state current DG858DW45 gate turn-off thyristor replaces july 1999 version, ds4334-4.0 ds4334-4.1 may 2000
DG858DW45 2/7 surge ratings conditions 20.0 2.0 x 10 6 ka a 2 s surge (non-repetitive) on-state current i 2 t for fusing 10ms half sine. t j = 125 o c 10ms half sine. t j =125 o c di t /dt critical rate of rise of on-state current 300 20 v/ s max. units rate of rise of off-state voltage peak stray inductance in snubber circuit dv d /dt 200 nh 750 v/ s to 66% v drm ; v rg = -2v, t j = 125 o c i tsm symbol parameter i 2 t v d = 3000v, i t = 3000a, t j =125 o c i fg > 40a, rise time < 1.0 s a/ s to 66% v drm ; r gk 22 ? , t j = 125 o c l s i t = 3000a, v d = v drm , t j = 125?c, di gq /dt = 40a/ s, cs = 4.0 f gate ratings symbol parameter conditions v units max. 16 20 min. - 20 - peak reverse gate voltage peak forward gate current average forward gate power peak reverse gate power rate of rise of reverse gate current minimum permissable on time minimum permissable off time 24 60 - 50 20 - - s 100 100 v rgm this value maybe exceeded during turn-off i fgm p fg(av) p rgm di gq /dt t on(min) t off(min) s a/ s kw w a thermal and mechanical data symbol parameter conditions max. min. r th(c-hs) contact thermal resistance r th(j-hs) - -0.03 - 0.0021 o c/w per contact cathode side cooled double side cooled units - 0.011 o c/w anode side cooled o c/w 0.017 virtual junction temperature t op /t stg operating junction/storage temperature range - clamping force -40 125 44.0 36.0 -40 kn o c/w clamping force 40kn with mounting compound dc thermal resistance - junction to heatsink surface t vj 125 o c o c
DG858DW45 3/7 characteristics conditions peak reverse current on-state voltage v tm peak off-state current reverse gate cathode current 50 - turn-on energy gate trigger current delay time rise time fall time gate controlled turn-off time turn-off energy storage time turn-off gate charge total turn-off gate charge peak reverse gate current - 12500 v rgm = 16v, no gate/cathode resistor c i t = 3000a, v dm = 4200v snubber cap cs = 4.0 f, di gq /dt = 40/ s t j = 125 o c unless stated otherwise symbol parameter i dm i rrm v gt gate trigger voltage i gt i rgm e on t d t r e off t gs t gf t gq q gq q gqt i gqm min. max. units at 3000a peak, i g(on) = 10a d.c. - 3.85 v v drm = 4500v, v rg = 2v - 100 ma at v rrm -50ma v d = 24v, i t = 100a, t j = 25 o c - 1.2 v v d = 24v, i t = 100a, t j = 25 o c - 4.0 a ma mj 4400 - v d = 2000v i t = 3000a, di t /dt = 300a/ s i fg = 40a, rise time < 1.0 s s 2.0 - - 6.0 s - 12500 mj -26 s s 2.5 - s 28.5 - - 25000 c - 950 a conditions limit v dc = 3500v, t j = -40 to + 125?c, ambient cosmic radiation at sea level, in open air, 100% duty cycle. units 100 fit dc blocking reliability reliability
DG858DW45 4/7 curves 1.5 2.0 2.5 3.0 3.5 instantaneous on-state voltage v tm - (v) 1000 2000 3000 4000 instantaneous on-state current i t - (a) measured under pulse conditions. i g(on) = 10a half sine wave 10ms 0 4.0 1.0 t j = 125 ? c t j = 25 ? c figure 2. on-state characteristics
DG858DW45 5/7 recommended gate conditions: i tcm = 3000a i fg = 40a i g(on) = 10a d.c. t w1(min) = 20 s i gqm = 1200a di gq /dt = 40a/ s q gq = 12500 c v rg(min) = 2v v rg(max) = 18v anode voltage and current v d 0.9v d 0.1v d t d t r t gt i t v dp 0.9i t i tail dv d /dt v d v dm gate voltage and current t gs t gf t w1 v fg i fg 0.1i fg di fg /dt 0.1i gq q gq 0.5i gqm i gqm v rg v (rg)br i g(on) t gq these are recommended dynex semiconductor conditions. other conditions are permitted according to users gate drive specifications. figure 3. general switching waveforms
DG858DW45 6/7 package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. 72 max 84.6 nom 84.6 nom 120 max 27.0 25.5 cathode anode gate connector 3.0 auxiliary cathode connector 3.0 12 ? 2 holes 3.6 x 2.0 deep (one in each electrode) nominal weight: 1700g package outline type code: w
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 sales offices benelux, italy & switzerland: tel: +33 (0)1 64 66 42 17. fax: +33 (0)1 64 66 42 19. france: tel: +33 (0)2 47 55 75 52. fax: +33 (0)2 47 55 75 59. germany, northern europe, spain & rest of world: tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 north america: tel: (440) 259-2060. fax: (440) 259-2059. tel: (949) 733-3005. fax: (949) 733-2986. these offices are supported by representatives and distributors in many countries world-wide. ?dynex semiconductor 2003 technical documentation ?not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regard ing the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information con cerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully deter mine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any me dical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com datasheet annotations: dynex semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. the annota tions are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product is in design and development. the datasheet represents the product as it is understood but details may change. advance information: the product design is complete and final characterisation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification.
|
