? 2009 ixys corporation, all rights reserved ixgh6n170a ixgt6n170a ds98990b(04/09) high voltage igbts v ces = 1700v i c25 = 6a v ce(sat) 7.0v symbol test conditions maximum ratings v ces t c = 25c to 150c 1700 v v cgr t j = 25c to 150c, r ge = 1m 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 6 a i c110 t c = 110c 3 a i cm t c = 25c, 1ms 14 a ssoa v ge = 15v, t vj = 125c, r g = 33 i cm = 12 a (rbsoa) clamped inductive load @ 0.8 ? v ces t sc t j = 125 c, v ce = 1200 v, v ge = 15 v, r g = 33 10 s p c t c = 25c 75 w t j - 55 ... +150 c t jm 150 c t stg - 55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 1700 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces , v ge = 0v 10 a t j = 125c 500 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = i c110 , v ge = 15v, note 1 7.0 v t j = 125c 5.4 features z international standard packages advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z welding machines preliminary technical information t fi(typ) = 32ns g = gate c = collector e = emitter tab = collector to-247 (ixgh) to-268 (ixgt) g e c (tab) g c e c (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixgh6n170a ixgt6n170a ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 min recommended footprint note 1: pulse test, t 300 s, duty cycle, d 2%. to-268 outline terminals: 1 - gate 2 - drain symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. g fs i c = 6a, v ce = 20v, note 1 2.0 3.5 s c ies 390 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 20 pf c res 7 pf q g 18.5 nc q ge i c = 6a, v ge = 15v, v ce = 0.5 ? v ces 2.8 nc q gc 8.2 nc t d(on) 46 ns t ri 40 ns e on 0.59 mj t d(off) 220 400 ns t fi 32 65 ns e off 0.18 0.36 mj t d(on) 48 ns t ri 43 ns e on 0.62 mj t d(off) 230 ns t fi 41 ns e off 0.25 mj r thjc 1.65 c/w r thck 0.21 c/w inductive load, t j = 25c i c = 6a, v ge = 15v v ce = 0.5 ? v ces , r g = 33 note 1 inductive load, t j = 125c i c = 6a, v ge = 15v v ce = 0.5 ? v ces , r g = 33 note 1 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. to-247 ad outline 1 2 3 terminals: 1 - gate 2 - drain dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216
? 2009 ixys corporation, all rights reserved ixys ref: g_6n170a(2n)4-15-09 ixgh6n170a ixgt6n170a fig. 1. output characteristics @ 25oc 0 1 2 3 4 5 6 7 8 9 10 11 12 01234567891011 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 2. extended output characteristics @ 25oc 0 2 4 6 8 10 12 14 16 18 20 22 24 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 7v 9v 11v 13v fig. 3. output characteristics @ 125oc 0 1 2 3 4 5 6 7 8 9 10 11 12 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 5v 7v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 12a i c =6a i c = 3a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 4 6 8 10 12 14 16 18 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 v ge - volts v ce - volts i c = 12a t j = 25oc 3a 6a fig. 6. input admittance 0 1 2 3 4 5 6 7 8 9 10 11 12 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. ixgh6n170a ixgt6n170a fig. 7. transconductance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0123456789101112 i c - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 2 4 6 8 101214161820 q g - nanocoulombs v ge - volts v ce = 850v i c = 6a i g = 1ma fig. 9. reverse-bias safe operating area 0 1 2 3 4 5 6 7 8 9 10 11 12 13 200 400 600 800 1000 1200 1400 1600 1800 v ce - volts i c - amperes t j = 125oc r g = 33 ? dv / dt < 10v / ns fig. 10. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res 0.1 1.0 10.0 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 11. maximum transient thermal impedance
? 2009 ixys corporation, all rights reserved ixgh6n170a ixgt6n170a ixys ref: g_6n170a(2n)4-15-09 fig. 12. inductive switching energy loss vs. gate resistance 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 30 40 50 60 70 80 90 100 110 120 r g - ohms e o f f - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 850v i c = 6a i c = 12a fig. 13. inductive switching energy loss vs. collector current 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 6 7 8 9 10 11 12 i c - amperes e o f f - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 e on - millijoules e off e on - - - - r g = 33 ? , v ge = 15v v ce = 850v t j = 125oc, 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e o f f - millijoules 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 e on - millijoules e off e on - - - - r g = 33 ? , v ge = 15v v ce = 850v i c = 6a i c = 12a
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