ls s269, ly s269, lg s269 lc sot-23 led, diffused low current led nicht fr neuentwicklungen / not for new designs 2000-03-01 1 opto semiconductors besondere merkmale ? geh?usetyp: eingef?rbtes, diffuses sot-23 geh?use ? besonderheit des bauteils: hohe lichtst?rke bei kleinen str?men ? wellenl?nge: 628 nm (super-rot), 590 nm (gelb), 570 nm (grn) ? abstrahlwinkel: 140 ? technologie: gaasp ? optischer wirkungsgrad: 2 lm/w ? gruppierungsparameter: lichtst?rke ? verarbeitungsmethode: fr alle smt-bestcktechniken geeignet ? l?tmethode: ir reflow l?ten ? vorbehandlung: nach jedec level 2 ? gurtung: 8 mm gurt mit 3000/rolle, ?180 mm oder 12000/rolle, ?330 mm anwendungen ? optischer indikator ? hinterleuchtung (lcd, schalter, tasten, displays, werbebeleuchtung, allgemeinbeleuchtung) features ? package: colored, diffused sot-23 package ? feature of the device: high luminous intensity at low currents ? wavelength: 628 nm (super-red), 590 nm (yellow), 570 nm (green) ? viewing angle: 140 ? technology: gaasp ? optical efficiency: 2 lm/w ? grouping parameter: luminous intensity ? assembly methods: suitable for all smt assembly methods ? soldering methods: ir reflow soldering ? preconditioning: acc. to jedec level 2 ? taping: 8 mm tape with 3000/reel, ?180 mm or 12000/reel, ?330 mm applications ? optical indicators ? backlighting (lcd, switches, keys, displays, illuminated advertising, general lighting)
2000-03-01 2 opto semiconductors ls s269, ly s269, lg s269 helligkeitswerte werden mit einer stromeinpr?gedauer von 25 ms und einer genauigkeit von 11 % ermittelt. luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of 11 %. typ type emissionsfarbe color of emission geh?usefarbe color of package lichtst?rke luminous intensity i f = 2 ma i v (mcd) bestellnummer ordering code ls s269-bo super-red red diffused 3 0.18 q62703-q1566 ly s269-bo yellow yellow diffused 3 0.18 q62703-q1568 lg s269-bo green green diffused 3 0.18 q62703-q1570
ls s269, ly s269, lg s269 2000-03-01 3 opto semiconductors grenzwerte maximum ratings bezeichnung parameter symbol symbol wert value einheit unit betriebstemperatur operating temperature range t op C 55 + 100 c lagertemperatur storage temperature range t stg C 55 + 100 c sperrschichttemperatur junction temperature t j + 100 c durchla?strom forward current i f 7.5 ma sto?strom surge current t 10 m s, d = 0.005 i fm 150 a sperrspannung reverse voltage v r 5v leistungsaufnahme power dissipation t a 25 c p tot 20 mw w?rmewiderstand thermal resistance sperrschicht/umgebung junction/ambient sperrschicht/l?tpad junction/solder point montage auf pc-board fr 4 (padgr??e 3 16 mm 2 ) mounted on pc board fr 4 (pad size 3 16 mm 2 ) r th ja r th js 750 350 k/w k/w
2000-03-01 4 opto semiconductors ls s269, ly s269, lg s269 kennwerte ( t a = 25 c) characteristics bezeichnung parameter symbol symbol werte values einheit unit ls ly lg wellenl?nge des emittierten lichtes (typ.) wavelength at peak emission i f = 2 ma l peak 635 586 565 nm dominantwellenl?nge (typ.) dominant wavelength i f = 2 ma l dom 628 590 570 nm spektrale bandbreite bei 50 % i rel max (typ.) spectral bandwidth at 50 % i rel max i f = 2 ma dl 45 45 25 nm abstrahlwinkel bei 50 % i v (vollwinkel) (typ.) viewing angle at 50 % i v 2 j 140 140 140 grad deg. durchla?spannung (typ.) forward voltage (max.) i f = 2 ma v f v f 1.8 2.6 2.0 2.7 1.9 2.6 v v sperrstrom (typ.) reverse current (max.) v r = 5 v i r i r 0.01 10 0.01 10 0.01 10 m a m a temperaturkoeffizient von l peak (typ.) temperature coefficient of l peak i f = 2 ma tc l peak 0.11 0.10 0.11 nm/k temperaturkoeffizient von l dom (typ.) temperature coefficient of l dom i f = 2 ma tc l dom 0.07 0.07 0.07 nm/k temperaturkoeffizient von v f (typ.) temperature coefficient of v f i f = 2 ma tc v C 2.0 C 1.6 C 1.9 mv/k optischer wirkungsgrad (typ.) optical efficiency i f = 2 ma h opt 222lm/w
ls s269, ly s269, lg s269 2000-03-01 5 opto semiconductors relative spektrale emission i rel = f ( l ), t a = 25 c, i f = 2 ma relative spectral emission v( l ) = spektrale augenempfindlichkeit standard eye response curve abstrahlcharakteristik i rel = f ( j ) radiation characteristic % rel l ohl01210 100 80 60 40 20 0 400 450 500 550 600 650 700 nm i green yellow super-red l v 0 0.2 0.4 1.0 0.8 0.6 j 1.0 0.8 0.6 0.4 0? 10? 20? 40? 30? ohl01693 50? 60? 70? 80? 90? 100? 0? 20? 40? 60? 80? 100? 120?
ls s269, ly s269, lg s269 2000-03-01 6 opto semiconductors durchla?strom i f = f ( v f ) forward current t a = 25 c maximal zul?ssiger durchla?strom i f = f ( t ) max. permissible forward current relative lichtst?rke i v / i v(2 ma) = f ( i f ) relative luminous intensity t a = 25 c relative lichtst?rke i v / i v(25 c) = f ( t a ) relative luminous intensity i f = 2 ma 10 -1 v 5 ohl01208 i f f v 0 10 1 10 2 10 5 ma 1 1.4 1.8 2.2 2.6 3 3.4 yellow green super-red ohl01081 0 0 20 40 60 80 ?c 100 t i f temp. ambient temp. solder point a s t t a t s t 1 2 3 4 5 6 ma 8 7 v v(2 ma) 10 -1 0 10 10 12 10 ma 10 -3 5 ohl01207 f i 5 -2 10 5 -1 10 0 10 1 10 i i 55 green super-red yellow yellow green super-red 0 ohl01675 ?c a t 0 20406080100 v v (25 ?c) i i 0.4 0.8 1.2 1.6 2
ls s269, ly s269, lg s269 2000-03-01 7 opto semiconductors zul?ssige impulsbelastbarkeit i f = f ( t p ) permissible pulse handling capability duty cycle d = parameter, t a = 25 c ohl01278 s 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t d i t t p f t p = d = 0.005 0.01 0.02 0.05 0.2 0.5 dc 10 0 5 i f t 1 10 2 10 3 10 5 ma 0.1 p
2000-03-01 8 opto semiconductors ls s269, ly s269, lg s269 ma?zeichnung package outlines ma?e werden wie folgt angegeben: mm (inch) / dimensions are specified as follows: mm (inch). 3 12 m 0.25 (0.010) 0.50 (0.020) 0.35 (0.014) b c 0.95 (0.037) 1.9 (0.075) 3.0 (0.118) 2.8 (0.110) b c a 1.4 (0.055) 1.2 (0.047) 10? max. 2?...30? a 0.2 (0.008) m gsoy6723 0.15 (0.006) 0.08 (0.003) 1 2 3 pin configuration ls, ly, lg approx. weight 0.01 g anode cathode 1.1 (0.043) max. 10? max. 2.6 (0.102) max 0.1 (0.004) max.
ls s269, ly s269, lg s269 2000-03-01 9 opto semiconductors l?tbedingungen vorbehandlung nach jedec level 2 soldering conditions preconditioning acc. to jedec level 2 ir-reflow l?tprofil (nach ipc 9501) ir reflow soldering profile (acc. to ipc 9501) ohly0597 0 0 50 100 150 200 250 50 100 150 200 250 300 t t ?c s 240-245 ?c 10-40 s 183 ?c 120 to 180 s defined for preconditioning: up to 6 k/s ramp-down rate up to 6 k/s ramp-up rate up to 6 k/s defined for preconditioning: 2-3 k/s
2000-03-01 10 opto semiconductors ls s269, ly s269, lg s269 empfohlenes l?tpaddesign ir reflow l?ten recommended solder pad ir reflow soldering gurtung / polarit?t und lage verpackungseinheit 3000/rolle, ?180 mm oder 12000/rolle, ?330 mm method of taping / polarity and orientation packing unit 3000/reel, ?180 mm or 12000/reel, ?330 mm ohlp0976 0.8 0.9 0.9 1.0 0.8 1.2 reflow l?ten / reflow soldering oha00323 1.5 2 4 3.15 2.65 3.5 1.75 8 4 a c cc a ls/ly/lg s260, lu s250, lv/lw s260 ls/ly/lg s269
|
