publication date : apr., 2011 1 < l/s band internally matched power gaas fet > MGFS45V2735 2.7 ? 3.5 ghz band / 30w description the MGFS45V2735 is an internally impedance-matched gaas power fet especially designed for use in 2.7 - 3.5 ghz band amplifiers. the hermetically sealed metal-ceramic package guarantees high reliability. features class a operation internally matched to 50(ohm) system ? high output power p1db=30w (typ.) @f=2.7 - 3.5ghz ? high power gain glp=12.0db (typ.) @f=2.7 - 3.5ghz ? high power added efficiency p.a.e.=36% (typ.) @f=2.7 - 3.5ghz ? low distortion [item -51] im3=-45dbc (typ.) @po=34.5dbm s.c.l application ? item 01 : 2.7 - 3.5 ghz band power amplifier ? item 51 : 2.7 - 3.5 ghz band digital radio communication quality ? ig recommended bias conditions ? vds=10v ? id=8a ? rg=25ohm absolute maximum ratings (ta=25 ? c) symbol parameter ratings unit vgdo gate to drain breakdown voltage -15 v vgso gate to source breakdown voltage -15 v id drain current 20 a igr reverse gate current -80 ma igf forward gate current 168 ma pt *1 total power dissipation 150 w tch cannel temperature 175 ? c tstg storage temperature -65 to +175 ? c *1 : tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max. idss saturated drain current vds=3v,vgs=0v - 24 - a gm transconductance vds=3v,id=8a - 8 - s vgs(off) gate to source cut-off voltage vds=3v,id=160ma -2 - -5 v p1db output power at 1db gain compression 44 45 - dbm glp linear power gain 11 12 - db id drain current - 8 - a p.a.e. power added efficiency - 36 - % im3 *2 3rd order im distortion vds=10v,id(rf off)=8.0a f=2.7 ? 3.5ghz -42 -45 - dbc rth(ch-c) *3 thermal resistance delta vf method - 0.8 1 ? c/w *2 :item -51 ,2 tone test,po=34.5dbm single carrier level ,f=2.7,3.1,3.5ghz,delta f=10mhz *3 :channel-case keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury , fire or property damage. remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (i) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 24 +/- 0.3 16.7 20.4 +/- 0.2 4 . 3 + / - 0 . 4 1 . 4 gf-38 2 m i n r1.2 outline 8 . 0 + / - 0 . 2 1 7 . 4 + / - 0 . 2 2 m i n (1 ) (1) gate (2) source(flange) (3)drain (3 ) 0 . 1 + / - 0 . 0 5 2 . 4 + / - 0 . 2 (2) unit : m m 0.6 +/- 0.15
< l/s band internally matched power gaas fet > MGFS45V2735 2.7 ? 3.5 ghz band / 30w publication date : apr., 2011 2 MGFS45V2735 typical characteristics MGFS45V2735 s-parameters ( ta=25deg.c , vds=10(v),ids=8(a) ) p1db,glp vs. f 41 42 43 44 45 46 47 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 frequency f (ghz) output power p1db (dbm) 10 12 14 16 18 20 22 linear power gain glp (d b vds=10v id = 8a p1db glp po,p.a.e. vs. pin 25 30 35 40 45 50 15 20 25 30 35 40 input power pin (dbm) output power po (dbm) 0 20 40 60 80 100 vds=10v id = 8a f=3.1ghz po p.a.e. 111 power added efficiency p.a.e. (% ) po,im3 vs. pin 26 28 30 32 34 36 38 40 42 18 20 22 24 26 28 30 input power pin (dbm) s.c.l. output power po (dbm) s.c.l. -60 -50 -40 -30 -20 -10 0 10 20 im 3 po im3 (dbc ) vds=10v ids=8a f=3.5ghz delta f=10mhz 2-tone test s-parameter (typ.) f s11 s21 s12 s22 (ghz) magn. angle(deg) magn. angle(deg) magn. angle(deg) magn. angle(deg) 2.60 0.63 88 3.39 38 0.03 -17 0.59 26 2.70 0.58 47 3.90 3 0.04 -52 0.49 -1 2.80 0.51 1 4.30 -31 0.05 -86 0.41 -30 2.90 0.47 -51 4.52 -66 0.06 -122 0.32 -67 3.00 0.47 -105 4.51 -101 0.06 -157 0.27 -106 3.10 0.50 -152 4.33 -135 0.06 166 0.24 -137 3.20 0.51 166 4.15 -168 0.05 134 0.23 -165 3.30 0.49 123 4.04 159 0.06 100 0.21 174 3.40 0.45 61 3.92 117 0.06 49 0.15 149 3.50 0.48 -11 3.60 76 0.06 8 0.05 165 3.60 0.64 -75 2.86 33 0.05 -40 0.16 -115
< l/s band internally matched power gaas fet > MGFS45V2735 2.7 ? 3.5 ghz band / 30w publication date : apr., 2011 3 ? 2011 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effo rt into making semiconductor products better and more reliable, but there is alwa ys the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appr opriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ?these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any ot her rights, belonging to mitsubishi elec tric corporation or a third party. ?mitsubishi electric corporation assumes no res ponsibility for any damage, or infringement of any third-party?s rights, originating in the use of any pr oduct data, diagrams, charts, programs, algorithms, or circuit application examples c ontained in these materials. ?all information contained in thes e materials, including product data, diagrams, charts, programs and algorithms represents information on pr oducts at the time of publication of these materials, and are subject to change by mitsubishi electric cor poration without notice due to product improvements or other reasons. it is therefore recommended that cust omers contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distri butor for the latest product info rmation before pu rchasing a product listed herein. the information described here may contain technica l inaccuracies or typographical errors. mitsubishi electric corporation assumes no re sponsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to info rmation published by mitsubishi electr ic corporation by various means, including the mitsubishi semiconductor home page (http://www. m itsubishi e lectric.com/). ?when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, pleas e be sure to evaluate all informati on as a total system before making a final decision on the applic ability of the information and products. mi tsubishi electric corporation assumes no responsibility for any damage, liabilit y or other loss resulting from the information contained herein. ?mitsubishi electric corporation semiconductors are not designed or m anufactured for use in a device or system that is used under circum stances in which human life is pot entially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a pr oduct contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aeros pace, nuclear, or undersea repeater use. ?the prior written approval of mitsubishi electric corporat ion is necessary to reprint or reproduce in whole or in part these materials. ?if these products or technologies ar e subject to the japanese export cont rol restrictions, they must be exported under a license from the ja panese government and cannot be im ported into a country other than the approved destination. any diversion or re-export contrary to the export contro l laws and regulations of japan and/or the country of destination is prohibited. ?please contact mitsubishi electric corporation or an authorized mitsubi shi semiconductor product distributor for further details on these material s or the products contained therein.
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