note: these devices are esd sensitive. the fo llowing precautions are strongly recommended: ensure that an esd approved carrier is used when di ce are transported from on e destination to another. personal grounding is to be worn at all times when handling these devices. agilent AMMC-3041 18 - 42 ghz double balanced mixer data sheet description the ammc- 3041 is a monolithic double balanced mixer designed for commercial communication systems. the ammc- 3041 mixer is fabricated using a suspended metal system to create a unique, broadside- coupled balun structure (patent pending) to achieve exceptional bandwidth. the broadband performance of the ammc- 3041 can be used to advantage by replacing conventional, narrow band mixers with a single device. chip size: 1050 x 750 m (41.5 x 29.5 mils) chip size tolerance: 10 m ( 0.4 mils) chip thickness: 100 10 m (4 0.4 mils) pad dimensions: 75 x 75 m (3 0.4 mils) features ? wide frequency range: ? rf, lo: 18 ? 42 ghz if: dc ? 5 ghz conversion loss: 9.5 db high iip3: +22 dbm high input p -1db : +16 dbm up or down conversion applications point-to-point radio lmds satcom AMMC-3041 absolute maximum ratings [1] symbol parameters/conditions units min. max. t b operating backside temp. c ? 55 +140 t stg storage temp. c ? 65 +165 t max maximum assembly temp (60 sec max) c +300 note: 1. operation in excess of any one of these conditions may result in permanent damage to this device.
2 AMMC-3041 rf specifications [1] (zo=50 ? , tb = 25 c, if = 2 ghz, lo input powe r = +14 dbm, rf input power = -20 dbm, except as noted.) spurious mixing products f rf = 31 ghz, rf input power = -10 dbm, f lo = 32 ghz, lo input power = +14 dbm. symbol parameters and test cond itions units minimum typical maximum lc conversion loss [1] down conversion up conversion db 9.5 9.0 13 13 iip3 input 3 rd order intercept point, down conversion [2] f rf = 26 ghz f rf = 38 ghz dbm 23 22 p ? 1 db input power at 1 db conversion loss compression down conversion up conversion dbm dbm 16 5 isol l-r lo - rf isolation f lo = 26 ghz f lo = 38 ghz db 44 29 notes: 1. 100% on-wafer rf test is done at rf frequency = 18, 22, 32, and 42 ghz. 2. ? f = 2 mhz, rf input power = -10 dbm. m x rf n x lo 01234 0 - 17.9 - - - 143069- - 2 - 88 49 95 - 3 - - 115 88 115 4---115115 all values are dbc relative to the if output power level.
3 AMMC-3041 typical performance zo=50 ? , tb = 25 c, if = 2 ghz, lo input power = +14 dbm, rf input power = ? 20 dbm, except as noted. figure 1. conversion loss, down conversion, lo freq = rf - if. figure 2. conversion loss, up conversion, lo freq = rf - if. figure 3. output power at 1 db conversion loss compression, down conversion, lo freq = rf + if. figure 4. output power at 1 db conversion loss compression, up conversion, lo freq = rf + if. figure 5. input 3 rd order intercept point, down conversion, lo freq = rf + if. figure 6. isolation, down conversion, lo freq = rf + if. rf frequency (ghz) conversion loss (db) 20 42 22 24 26 28 30 32 34 36 38 40 14 13 12 11 10 9 8 lo = 1 4 dbm lo = 1 5 dbm lo = 1 6 dbm rf frequency (ghz) conversion loss (db) 20 42 22 24 26 28 30 32 34 36 38 40 14 13 12 11 10 9 8 lo = 1 4 dbm lo = 1 5 dbm lo = 1 6 dbm rf frequency (ghz) p1db (dbm) 18 40 20 22 24 26 28 30 32 34 36 38 20 18 16 14 12 10 lo = 1 4 dbm lo = 1 5 dbm lo = 1 6 dbm rf frequency (ghz) p1db (dbm) 18 40 20 22 24 26 28 30 32 34 36 38 15 10 5 0 lo = 1 4 dbm lo = 1 5 dbm lo = 1 6 dbm rf frequency (ghz) iip3 (dbm) 18 40 20 22 24 26 28 30 32 34 36 38 35 30 25 20 15 10 rf frequency (ghz) isolation (db) 18 40 20 22 24 26 28 30 32 34 36 38 60 55 50 45 40 35 30 25 l-r isolation l-i isolation r-i isolation
4 applications information operation of the ammc- 3041 is very straightforward. the rf, lo, and if ports can be connected directly to 50- ohm circuits. none of the three ports should have a dc voltage applied to them. if dc voltages are present, a blocking capacitor should be used. some enhancement in conversion loss may be obtained by reflectively terminating the lo and rf signals at the if port. this is easily done by connecting a 20- mil long bond wire from the if output pad on the mmic to a shunt, off- chip 0.5 pf chip capacitor as indicated in figure 7. for up conversion applications, the input signal is normally applied to the if port, the local oscillator connected to the lo port, and the up- converted output signal taken from the rf port. assembly techniques the backside of the ammc- 3041 chip is rf ground. for microstripline applications, the chip should be attached directly to the ground plane (e.g., circuit carrier) using electrically conductive epoxy [1] . for best performance, the topside of the mmic should be brought up to the same height as the circuit surrounding it. this can be accomplished by mounting a gold plated metal shim (same length and width as the mmic) under the chip, which is of the correct thickness to make the chip and adjacent circuit coplanar. the amount of epoxy used for chip and or shim attachment should be just enough to provide a thin fillet around the bottom perimeter of the chip or shim. the ground plane should be free of any residue that may jeopardize electrical or mechanical attachment. for use on coplanar circuits, the chip can be mounted directly on the topside ground plane of the circuit. the location of the rf, lo, and if bond pads is shown in figure 8. note that all i/o ports are in a ground- signal- ground configuration. the if port is located near the middle of the die, which allows this connection to be made from either side of the chip for maximum layout flexibility. rf connections should be kept as short as reasonable to minimize performance degradation due to series inductance. a single bond wire is sufficient for all signal connections. however, double- bonding with 0.7 mil gold wire or the use of gold mesh [2] is recommended for best performance, especially near the high end of the frequency range. thermosonic wedge bonding is the preferred method for wire attachment to the bond pads. gold mesh can be attached using a 2 mil round tracking tool and a tool force of approximately 22 grams with an ultrasonic power of roughly 55 db for a duration of 76 8 ms. a guided wedge at an ultrasonic power level of 64 db can be used for the 0.7 mil wire. the recommended wire bond stage temperature is 150 2 c. caution should be taken to not exceed the absolute maximum rating for assembly temperature and time. the chip is 100 m thick and should be handled with care. this mmic has exposed air bridges on the top surface and should be handled by the edges or with a custom collet (do not pick up die with vacuum on die center.) this mmic is also static sensitive and esd handling precautions should be taken. notes: 1. ablebond 84-1 lm1 silver epoxy is recommended. 2. buckbee-mears corporation, st. paul, mn, 800-262-3824
5 figure 7. AMMC-3041 schematic diagram. figure 8. AMMC-3041 bonding pad locations. dimensions are in microns. ordering information: ammc- 3041- w10 = waffle pack, 10 devices per tray ammc- 3041- w50 = waffle pack, 50 devices per tray rf if lo if 0.5 pf 20 mil bondwire 440 750 518 lo rf if 0 0 45 540 960 1050 540 0 if
www.agilent.com/ semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (916) 788-6763 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (+65) 6756 2394 india, australia, new ze aland: (+65) 6755 1939 japan: (+81 3) 3335-8152 (domestic/international) or 0120-61-1280 (domestic only) korea: (+65) 6755 1989 singapore, malaysia, vietnam, thailand, philippines, indonesia: (+65) 6755 2044 taiwan: (+65) 6755 1843 data subject to change. copyright ? 2004 agilent technologies, inc. february 13, 2004 5989-0529en
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