tm november 2010 FCP36N60N n-channel mosfet ?2010 fairchild semiconductor corporation FCP36N60N rev. a www.fairchildsemi.com 1 supremos tm FCP36N60N n-channel mosfet 600v, 36a, 90m features ?r ds(on) = 81m ( typ.)@ v gs = 10v, i d = 18a ? ultra low gate charge ( typ. qg = 86nc) ? low effective output capacitance ? 100% avalanche tested ? rohs compliant description the supremos mosfet, fairchild?s next generation of high voltage super-junction mosfets, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. by utilizing this advanced technology and precise process control, supremos provides world class rsp, superior switching performance and ruggedness. this supremos mosfet fits the industry?s ac-dc smps requirements for pfc, server/telecom power, fpd tv power, atx power, and industrial power applications. g s d to-220 fcp series g d s mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FCP36N60N units v dss drain to source voltage 600 v v gss gate to source voltage 30 v i d drain current -continuous (t c = 25 o c) 36 a -continuous (t c = 100 o c) 22.7 i dm drain current - pulsed (note 1) 108 a e as single pulsed avalanche energy (note 2) 1800 mj i ar avalanche current 12 a e ar repetitive avalanche energy 3.12 mj dv/dt mosfet dv/dt ruggedness 100 v/ns peak diode recovery dv/dt (note 3) 20 v/ns p d power dissipation (t c = 25 o c) 312 w - derate above 25 o c 2.6 w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FCP36N60N units r jc thermal resistance, junction to case 0.4 o c/w r cs thermal resistance, case to heat sink (typical) 0.5 r ja thermal resistance, junction to ambient 62.5 *drain current limited by maximum junction temperature
FCP36N60N n-channel mosfet FCP36N60N rev. a www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics device marking device package reel size tape width quantity FCP36N60N FCP36N60N to-220 - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 1ma, v gs = 0v, t c = 25 o c 600 - - v bv dss t j breakdown voltage temperature coefficient i d = 1ma, referenced to 25 o c - 0.7 - v/ o c i dss zero gate voltage drain current v ds = 480v, v gs = 0v - - 10 a v ds = 480v, v gs = 0v, t c = 125 o c - - 100 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a 2.0 - 4.0 v r ds(on) static drain to source on resistance v gs = 10v, i d = 18a - 81 90 m g fs forward transconductance v ds = 40v, i d = 18a - 41 - s c iss input capacitance v ds = 100v, v gs = 0v f = 1mhz - 3595 4785 pf c oss output capacitance - 149 200 pf c rss reverse transfer capacitance - 4 6 pf c oss output capacitance v ds = 380v, v gs = 0v, f = 1mhz - 80 - pf c oss eff. effective output capacitance v ds = 0v to 380v, v gs = 0v - 361 - pf q g(tot) total gate charge at 10v v ds = 380v, i d = 18a, v gs = 10v (note 4) - 86 112 nc q gs gate to source gate charge - 15.4 - nc q gd gate to drain ?miller? charge - 26.4 - nc esr equivalent series resistance (g-s) drain open - 1 - t d(on) turn-on delay time v dd = 380v, i d = 18a r g = 4.7 (note 4) -2356ns t r turn-on rise time - 22 54 ns t d(off) turn-off delay time - 94 198 ns t f turn-off fall time - 4 18 ns i s maximum continuous drain to source diode forward current - - 36 a i sm maximum pulsed drain to source diode forward current - - 108 a v sd drain to source diode forward voltage v gs = 0v, i sd = 18a - - 1.2 v t rr reverse recovery time v gs = 0v, i sd = 18a di f /dt = 100a/ s - 574 - ns q rr reverse recovery charge 10 - c notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. i as = 12a, r g = 25 , starting t j = 25c 3. i sd 36a, di/dt 200a/ s, v dd = 380v, starting t j = 25c 4. essentially independent of operating temperature typical characteristics
FCP36N60N n-channel mosfet FCP36N60N rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics
FCP36N60N n-channel mosfet FCP36N60N rev. a www.fairchildsemi.com 4 t 1 p dm t 2 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve t 1 p dm t 2
FCP36N60N n-channel mosfet FCP36N60N rev. a www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FCP36N60N n-channel mosfet FCP36N60N rev. a www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms
FCP36N60N n-channel mosfet FCP36N60N rev. a www.fairchildsemi.com 7 mechanical dimensions to-220
FCP36N60N n-channel mosfet FCP36N60N rev. a www.fairchildsemi.com 8 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? 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