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index of /ds/np/ name last modified size description parent directory npds402.pdf 22-dec-99 00:13 123k npds403.pdf 22-dec-99 00:13 123k npds404.pdf 22-dec-99 00:13 123k npds405.pdf 22-dec-99 00:13 123k npds5565.pdf 22-dec-99 00:13 130k npds5566.pdf 22-dec-99 00:13 130k npds5911.pdf 22-dec-99 00:13 121k npds5912.pdf 22-dec-99 00:13 121k npds8301.pdf 22-dec-99 00:13 109k npds8302.pdf 22-dec-99 00:13 109k NPDS8303.pdf 22-dec-99 00:13 109k npn_epitaxial_silicon+ 16-apr-99 13:01 73k
npds402 / npds403 / npds404 / npds406 discrete power & signal technologies npds402 npds403 npds404 npds406 n-channel general purpose dual amplifier sourced from process 98. absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations symbol parameter value units v dg drain-gate voltage 50 v v gs gate-source voltage 50 v i gf forward gate current 10 ma t j ,t stg operating and storage j unction temperature range -55 to +150 c so-8 nc g1 d1 s1 d2 s2 nc g2 ? 1997 fairchild semiconductor corporation
npds402 / npds403 / npds404 / npds406 general purpose dual amplifier (continued) electrical characteristics ta = 25c unless otherwise noted off characteristics on characteristics symbol parameter test conditions min max units i dss zero-gate voltage drain current* v ds = 10 v, v gs = 0 0.5 10 ma v (br) gss gate-source breakdown voltage i g = 1.0 m a, v ds = 0 - 50 v i gss gate reverse current v gs = 30 v, v ds = 0 25 pa v gs(off) gate-source cutoff voltage v ds = 15 v, i d = 1.0 na - 0.5 - 2.5 v v gs gate-source voltage v dg = 15 v, i d = 200 m a- 2.3v v g1 - g2 voltage gate 1-gate 2 i g = 1.0 m a, v ds = 0 + / - 50 v small signal characteristics g fs common sourc e forward transconductance v ds = 10 v, v gs = 0, f = 1.0 khz v ds = 15 v, i d = 200 m a, f = 1.0 khz 2000 1000 7000 2000 m mhos m mhos g oss common source output conductance v ds = 10 v, v gs = 0, f = 1.0 khz 20 m mhos g os common source output conductance v ds = 15 v, i d = 200 m a, f = 1.0 khz 2.0 m mhos c iss input capac itance v dg = 15 v, i d = 200 m a, f = 1.0 mhz 8.0 pf c rss reverse transfer capacitance v dg = 15 v, i d = 200 m a, f = 1.0 mhz 3.0 pf cmmr common mode rejection v dg = 10 to 20 v, i d = 200 m a 95 db v gs1 - v gs2 differential match v dg = 10 v, i d = 200 m a, npds402 npds403 npds404 npds406 10 10 15 40 mv mv mv mv d v gs1 - v gs2 differential drift v dg = 10 v, i d = 200 m a, t a = -55 to 25 c npds402 npds403 npds404 npds406 v dg = 10 v, i d = 200 m a t a = 25 to 125 c npds402 npds403 npds404 npds406 10 25 25 80 10 25 25 80 m v/ c m v/ c m v/ c m v/ c m v/ c m v/ c m v/ c m v/ c * pulse test: pulse width 300 ms, duty cycle 2%
npds402 / npds403 / npds404 / npds406 typical characteristics (continued) parameter interactions common drain-source transfer characteristics common drain source gate leakage current vs. voltage transfer characteristics general purpose dual amplifier (continued)
npds402 / npds403 / npds404 / npds406 general purpose dual amplifier (continued) typical characteristics (continued) transconductance vs. gate source voltage transconductance vs. gate source voltage capacitance vs. gate source voltage noise voltage vs. frequency output conductance vs. drain current forward transconductance vs. drain current
npds402 / npds403 / npds404 / npds406 typical characteristics (continued) differential drift differential offset cmrr vs. drain current general purpose dual amplifier (continued)
npds5565 / npds5566 discrete power & signal technologies npds5565 npds5566 n-channel general purpose dual amplifier sourced from process 96. absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. symbol parameter value units v dg drain-gate voltage 40 v v gs gate-source voltage 40 v i gf gate current 10 ma t j ,t stg operating and storage j unction temperature range -55 to +150 c so-8 nc g1 d1 s1 d2 s2 nc g2 ? 1997 fairchild semiconductor corporation
npds5565 / npds5566 electrical characteristics ta = 25c unless otherwise noted off characteristics on characteristics small signal characteristics symbol parameter test conditions min max units v (br) gss gate-source breakdown voltage i g = 1.0 m a, v ds = 0 - 40 v i gss gate reverse current v gs = 20 v, v ds = 0 v gs = 20 v, v ds = 0, t a = 150 c 100 200 pa m a v gs(off) gate-source cutoff voltage v ds = 15 v, i d = 1.0 na - 0.5 - 3.0 v v gs(f) forward gate-source voltage v ds = 0, i d = 2.0 ma 1.0 v v g1 - g2 voltage gate 1 - gate 2 v ds = 0, i g = + / - 1.0 m a+ / - 40 v i dss zero-gate voltage drain current* v ds = 15 v, v gs = 0 5.0 30 ma r ds( on ) drain-source on resistance i d = 1.0 ma, v gs = 0 100 w g fs common sourc e forward transconductance v ds = 15 v, i d = 2.0ma, f = 1.0 khz v ds = 15 v, i d = 2.0 ma, f = 100 mhz 7500 7000 12,500 m mhos m mhos g oss common source output conductance v ds = 15 v, i d = 2.0ma, f = 1.0 khz 45 m mhos c iss input capac itance v dg = 15 v, i d = 2.0ma, f = 1.0mhz 12 pf c rss reverse transfer capacitance v ds = 15 v, i d = 2.0ma, f = 1.0 khz 3.0 pf e n equivalent short-circuit input noise voltage v dg = 15 v, i d = 2.0 ma, f = 10 hz 50 nf noise figure v dg = 15 v, i d = 2.0 ma, f = 10 hz r g = 1.0 m w 1.0 db i dss1 - i dss2 i dss match v ds = 15 v, v gs = 0 5.0 % g fs 1 - g fs 2 g fs match v ds = 15 v, i d = 2.0ma, f = 1.0 khz 10 % v gs1 - v gs2 differential match v dg = 15 v, i d = 2.0 ma, npds5565 npds5566 10 20 mv mv d v gs1 - v gs2 differential drift v ds = 10 v, v gs = 0, f = 1.0 khz t a = 25 to 125 c npds5565 npds5566 v dg = 15 v, i d = 2.0 ma, t a = -55 to 25 c npds5565 npds5566 25 50 25 50 m v/ c m v/ c m v/ c m v/ c nv/ ? hz general purpose dual amplifier (continued)
npds5565 / npds5566 typical characteristics (continued) transfer characteristics transfer characteristics transfer characteristics transfer characteristics parameter interactions common drain-source general purpose dual amplifier (continued)
npds5565 / npds5566 transconductance vs. drain current noise voltage vs. frequency capacitance vs. voltage noise voltage vs. current leakage current vs. voltage output conductance vs. drain current typical characteristics (continued) general purpose dual amplifier (continued)
npds5565 / npds5566 typical characteristics (continued) cmrr vs. drain current differential drift differential offset general purpose dual amplifier (continued)
npds5911 / npds5912 discrete power & signal technologies n-channel general purpose dual amplifier sourced from process 93. npds5911 npds5912 absolute maximum ratings* ta = 25c unless otherwise noted symbol parameter value units v dg drain-gate voltage 25 v v gs gate-source voltage 25 v i gf forward gate current 10 ma t j ,t stg operating and storage j unction temperature range -55 to +150 c * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. so-8 nc g1 d1 s1 d2 s2 nc g2 ? 1997 fairchild semiconductor corporation
npds5911 / npds5912 general purpose dual amplifier (continued) electrical characteristics ta = 25c unless otherwise noted off characteristics on characteristics symbol parameter test conditions min max units i dss zero-gate voltage drain current* v ds = 10 v, v gs = 0 7.0 40 ma small signal characteristics v (br) gss gate-source breakdown voltage i g = 1.0 m a, v ds = 0 - 25 v i gss gate reverse current v gs = 15 v, v ds = 0 v gs = 15 v, v ds = 0, t a = 150 c 100 250 pa na v gs( off ) gate-source cutoff voltage v ds = 10 v, i d = 1.0 na - 1.0 - 5.0 v v gs gate-source voltage v dg = 10 v, i d = 5.0 ma - 0.3 - 4.0 v v g1 - g2 voltage gate 1 - gate 2 v ds = 0, i g = + / - 1.0 m a+ / - 25 v g fs common sourc e forward transconductance v ds = 10 v, i d = 5.0ma, f = 1.0 khz v ds = 10 v, i d = 5.0 ma, f = 100 mhz 5000 5000 10,000 10,000 m mhos m mhos g oss common source output conductance v ds = 10 v, i d = 5.0ma, f = 1.0 khz v ds = 10v, i d = 5.0ma, f = 100 mhz 100 150 m mhos m mhos c iss input capac itance v dg = 10 v, i d = 5.0ma, f =1.0 mhz 5.0 pf c rss reverse transfer capacitance v ds = 10 v, i d = 5.0ma, f = 1.0 khz 1.2 pf e n equivalent short-circuit input noise voltage v dg = 10 v, i d = 5.0 ma, f = 10 khz 20 nf noise figure v dg = 10 v, i d = 5.0 ma, f = 10 khz r g = 100 k w 1.0 db i dss1 -i dss2 i dss match v ds = 10 v, v gs = 0 5.0 % g fs 1 - g fs 2 g fs match v ds = 10 v, i d = 5.0ma, f = 1.0 khz 5.0 % g oss1 -g oss2 g oss match v ds = 10 v, i d = 5.0ma, f = 1.0 khz 20 m mhos i g1 - i g2 i g match v ds = 10 v, i d = 5.0ma, t a = 125 c 20 na v gs1 - v gs2 differential match v dg = 10 v, i d = 5.0 ma, npds5911 npds5912 10 15 mv mv d v gs1 - v gs2 differential drift v dg = 10 v, v gs = 0, i d = 5.0 ma, t a = 25 to 125 c npds5911 npds5912 v dg = 10 v, i d = 5.0 ma, t a = -55 to 25 c npds5911 npds5912 20 40 20 40 m v/ c m v/ c m v/ c m v/ c nv/ ? hz * pulse test: pulse width 300 ms, duty cycle 2%
npds5911 / npds5912 typical characteristics (continued) transfer characteristics transfer characteristics transfer characteristics transfer characteristics parameter interactions common drain-source general purpose dual amplifier (continued)
npds5911 / npds5912 general purpose dual amplifier (continued) typical characteristics (continued) noise voltage vs. frequency differential drift transconductance vs. drain current capacitance vs. voltage leakage current vs. voltage output conductance vs. drain current
npds5911 / npds5912 typical characteristics (continued) cmrr vs. drain current differential offset general purpose dual amplifier (continued)
npds8301 / npds8302 / NPDS8303 discrete power & signal technologies npds8301 npds8302 NPDS8303 n-channel general purpose dual amplifier sourced from process 83. absolute maximum ratings* ta = 25c unless otherwise noted symbol parameter value units v dg drain-gate voltage 40 v v gs gate-source voltage 40 v i gf forward gate current 10 ma t j , t stg operating and storage j unction temperature range -55 to +150 c * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. so-8 nc g1 d1 s1 d2 s2 nc g2 ? 1997 fairchild semiconductor corporation
npds8301 / npds8302 / NPDS8303 electrical characteristics ta = 25c unless otherwise noted off characteristics symbol parameter test conditions min max units v (br) gss gate-source breakdown voltage i g = 1.0 m a, v ds = 0 - 40 v i gss gate reverse current v gs = 20 v, v ds = 0 100 pa v gs( off ) gate-source cutoff voltage v ds = 20 v, i d = 1.0 na - 0.5 - 3.5 v v gs gate-source voltage v ds = 20 v, i d = 200 m a - 0.3 - 3.5 v on characteristics i dss zero-gate voltage drain current* v ds = 20 v, v gs = 0 0.5 6.0 ma small signal characteristics g fs common sourc e forward transconductance v ds = 20 v, v gs = 0, f = 1.0 khz v ds = 20 v, i d = 200 m a, f = 1.0 khz 1000 700 4000 1200 m mhos m mhos g oss common source output conductance v ds = 20 v, i d = 200 m a, f = 1.0 khz 20 m mhos g os common source output conductance v ds = 20 v, i d = 200 m a, f = 1.0 khz 5.0 m mhos v gs1 - v gs2 differential match v dg = 20 v, i d = 200 m a, npds8301 npds8302 NPDS8303 5.0 10 15 mv mv mv d v gs1 - v gs2 differential drift v ds = 20 v, i d = 200 m a, t a = 25 to 85 c npds8301 npds8302 NPDS8303 10 15 25 m v/ c m v/ c m v/ c * pulse test: pulse width 300 ms, duty cycle 2% typical characteristics parameter interactions common drain-source general purpose dual amplifier (continued)
npds8301 / npds8302 / NPDS8303 general purpose dual amplifier (continued) typical characteristics (continued) transfer characteristics transfer characteristics leakage current vs. voltage channel resistance vs. temperature noise voltage vs. current noise voltage vs. frequency
npds8301 / npds8302 / NPDS8303 typical characteristics (continued) transconductance vs. drain current output conductance vs. drain current differential offset capacitance vs. voltage cmrr vs. drain current general purpose dual amplifier (continued)
npn epitaxial mje800/801/ 803 silicon darlington transistor high dc current gain min h fe = 750 i c = -1.5 and -2.0a dc monolithic construction with built-in base-emitter resistors complement to mje700/701/702/703 absolute maximum ratings electrical characteristics (t c =25 c) characteristic symbol rating unit collector- base voltage : mje800/801 : mje802/803 collector-emitter voltage : mje800/801 : mje802/803 emitter- base voltage collector current base current collector dissipation (t c =25 c) junction temperature storage temperature v cbo v ceo v ebo i c i b p c t j t stg 60 80 60 80 5 4 0.1 40 150 -55 ~ 150 v v v v v a a w c c characteristic symbol test condition min max unit collector emitter breakdown voltage : mje800/801 : mje802/803 collector cutoff current : mje800/801 : mje802/803 collector cutoff current emitter cutoff current dc current gain : mje800/802 : mje801/803 : all devices collector-emitter saturation voltage : mje800/802 : mje801/803 : all devices base-emitter on voltage : mje800/802 : mje801/803 : all devices bv ceo i ceo i cbo i ebo h fe v ce (sat) v be (on) i c = 50ma, i b = 0 v ce = 60v, i b = 0 v ce = 80v, i b = 0 v cb = rated bv ceo , i e = 0 v cb = rated bv ceo , i e = 0 t c = 100 c v be = 5v, i c = 0 v ce = 3v, i c = 1.5a v ce = 3v, i c = 2a v ce = 3v, i c = 4a i c = 1.5a, i b = 30ma i c = 2a, i b = 40ma i c = 4a, i b = 40ma v ce = 3v, i c = 1.5a v ce = 3v, i c = 2a v ce = 3v, i c = 4a 60 80 750 750 100 100 100 100 500 2 2.5 2.8 3 1.2 2.5 3 v v m a m a m a m a ma v v v v v v to-126 1. emitter 2. collector 3. base ? 1999 fairchild semiconductor corporation rev. b.1
npn epitaxial mje800/801/ 803 silicon darlington transistor
trademarks acex? coolfet? crossvo l t? e 2 cmos tm f act? f act quiet series? f ast ? f as t r? g t o? hisec? the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy f airchilds products are not authorized for use as critical components in life suppo r t devices or systems without the express written appro v al of f airchild semiconduc t or corpor a tion. as used herein: isoplanar? microwire? pop? power t rench? qs? quiet series? supersot?-3 supersot?-6 supersot?-8 t inylogic? 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the bod y , or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the use r . 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to a f fect its safety or e f fectiveness. product s t a tus definitions definition of t erms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconducto r . the datasheet is printed for reference information onl y . formative or in design first production full production not in production disclaimer fairchild semiconductor reserves the right to make changes without further notice t o any products herein to improve reliabilit y , function or design. fairchild does not assume any liability arising out of the applic a tion or use of any product or circuit described herein; neither does it convey any license under its pa tent rights, nor the rights of others.

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