pc904 pc904 symbol rating unit i a 50 ma v a 30 v i ref 10 ma p 250 mw v ceo 35 v v eco 6v i c 50 ma p c 150 mw p tot 350 mw v iso t opr - 25 to + 85 ?c t stg - 40 to + 125 ?c t sol 260 ?c n features 1. built-in voltage detection circuit 2. high isolation voltage between input and 3. standard 8-pin dual-in-line package n applications *2 for 10 seconds ( ta = 25?c ) n absolute maximum ratings ( unit : mm ) connection diagram internal q q pc904 output ( v iso parameter input anode current anode voltage reference input current power dissipation output collector-emitter voltage emitter-collector voltage collector current collector power dissipation total power dissipation *1 isolation voltage operating temperature storage temperature *2 soldering temperature data books, etc. contact sharp in order to obtain the latest version of the device specification sheets before using any sharp 's device. in the absence of confirmation by device specification sheets, sharp takes no responsibility for any defects that occur in equi pment using any of sharp's devices, shown in catalogs, 4. recognizerd by ul, file no. e64380 1. switching power supplies 12 34 876 5 1 2 34 5 6 7 8 1 anode 2 cathode 3 gnd 4 reference 5 nc 6 emitter 7 collector 8 nc built-in voltage detection circuit type photocoupler n outline dimensions primary side mark 5 000 *1 40 to 60%rh ac for 1 minute h lead forming type ( i type ) and taping reel type ( p type ) are also available. ( pc904i/pc904p ) : 5 000v rms ) v rms q = 0 ? to 13 ? 6.5 0.5 1.2 0.3 0.85 0.3 0.8 0.2 7.62 0.3 0.26 0.1 2.54 0.25 0.5 0.1 3.0 0.5 3.5 0.5 0.5 typ.
pc904 conditions v k =v ref , i a = 10ma v k =v ref , i a = 10ma, ta = - 25 to + 85?c i a = 10ma, d v a = 30v - v ref i a = 10ma, r 3 = 10k w i a = 10ma, r 3 = 10k w , ta = - 25 to + 85?c v k =v ref v a = 30v, v ref = gnd v k =v ref , i a = 10ma v ce = 35v v k =v ref , i a = 5ma, v ce =5v v k =v ref , i a = 10ma, i c = 1ma *3 v ref ( dev ) =v ref ( max. ) -v ref ( min. ) *4 i ref ( dev ) =i ref ( max. ) -i ref ( min. ) *5 ctr = i c / i a x 100 ( % ) min. typ. max. unit fig. 2.40 2.495 2.60 v 1 - 8 40 mv 1 - - 1.4 - 5 mv/v 2 -210 m a3 - 0.4 3 m a3 -12ma1 - 0.1 2 m a4 - 1.2 1.4 v 1 - 1x10 -9 1x10 -7 a5 50 - 600 % 6 - - 0.1 0.2 v 6 5x10 10 1x10 11 - w 0.6 1.0 pf - - n test circuit fig. 1 fig. 2 model no. rank mark ctr ( % ) a 50 to 150 b 100 to 300 c 250 to 600 a, b or c 50 to 600 ( ta = 25?c ) n electro-optical characteristics parameter input reference voltage reference voltage *3 temperature change in voltage variation ratio in reference voltage reference input current reference input current *4 temperature change in minimum drive current anode-cathode forward voltage output collector dark current transfer charac- teristics collector-emitter saturation voltage isolation resistance floating capacitance 6 7 2 1 4 3 v v a 3 4 1 2 7 6 ia v k v cc v ref v f v cc v a r 1 r 2 v ref i a pc904a pc904b pc904c pc904 *5 current transfer ratio symbol v ref v ref ( dev ) d v ref / d v a i ref i ref ( dev ) i min i off v f i ceo ctr v ce ( sat ) r iso c f off-state anode current v = 0, f = 1khz classification table of current transfer ratio is shown below. ( 4 models ) 40 to 60% rh, dc500v
fig. 3 fig. 4 fig. 5 fig. 6 pc904 a 3 4 1 2 7 6 a 3 4 1 2 7 6 i a v cc r 3 i ref v a v cc i off 3 4 1 2 7 6 3 4 1 2 7 6 a v a i ceo v ce v cc v k v ref i a v ce i c 0 - 25 100 10 20 30 40 50 60 0 25507585 anode current i a ( ma ) ambient temperature t a ( ?c ) 0 - 25 100 50 100 150 200 250 300 0 255075 85 fig. 8 input power dissipation vs. ambient temperature input power dissipation p ( mw ) ambient temperature t a ( ?c ) fig. 7 anode current vs. ambient temperature
pc904 0 0 125 100 200 50 150 25 50 75 100 ambient temperature -25 85 0 300 0 25 50 75 100 85 600 200 100 500 400 350 power dissipation p tot ( mw ) ambient temperature t a ( ?c ) 50 0 100 150 0 25 100 75 50 relative current transfer ratio ( % ) fig.11 relative current transfer ratio vs. ambient temperature ambient temperature t a ( ?c ) 20 0 40 60 80 5 5 5 5 5 100 fig.12 collector dark current vs. ambient temperature ambient temperature t a ( ?c ) collector dark current i ceo ( a ) 0 03 10 20 30 40 50 12 anode current i a ( ma ) reference voltage v ref ( v ) voltage 0 03 200 400 600 800 12 anode current i a reference voltage v ref ( v ) voltage collector power dissipation p c ( mw ) ambient temperature t a ( ?c ) fig.10 power dissipation vs. ambient temperature v ce = 35v 5 v k =v ref i a = 5ma v ce =5v v k =v ref t a = 25?c v k =v ref t a = 25?c fig. 9 collector power dissipation vs. fig.13-a anode current vs. reference fig.13-b anode current vs. reference ( m a ) -30 10 -11 10 -10 10 -9 10 -8 10 -7 10 -6 10 -5 1 200 1 000 -25 -25
pc904 0 - 30 100 0 20406080 5 10 ambient temperature off ( m a ) ambient temperature t a ( ?c ) fig.14 off-state anode current vs. - 30 100 0 20406080 2.40 2.50 2.60 2.495v 2.40v ambient temperature ref ambient temperature t a ( ?c ) fig.15 reference voltage vs. v ref = 2.60v 0 - 25 100 1 2 3 0 255075 ambient temperature reference input current i ref ( m a ) ambient temperature t a ( ?c ) fig.16 reference input current vs. i a = 10ma -30 0 -20 -10 0 5 101520253035 anode voltage ref ( mv ) anode voltage v a ( v ) fig.17 reference voltage change vs. -20 0.1 0 20 40 60 80 100 1 10 100 voltage gain ( 1 ) a v1 ( db ) 10 m f 620 w 10k w 10k w f test circuit for voltage gain ( 1 ) vs. frequency v in v o v in a v1 v o v a = 30v v ref = gnd i a = 10ma i a = 10ma t a = 25?c i f = 2ma t a = 25?c off-state anode current i v k =v ref ( v ) reference voltage v reference voltage change d v frequency f ( khz) fig.18-a voltage gain ( 1 ) vs. frequency = 20 log 1 000
pc904 -50 0.1 -40 -30 -20 -10 0 10 1 10 100 100 w 1k w voltage gain ( 2 ) a v2 ( db ) 0 10 20 30 40 50 10 anode current i a ( ma ) load capacitance c l ( m f ) 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 - 25 0 25 50 75 100 ambient temperature t a ( ?c ) 0 50 11050 300 20 2 100 150 200 250 5 current transfer ratio ctr (%) anode current anode current i a ( ma ) fig.21 current transfer ratio vs. n precautions for use 10 m f 620 w 10k w 10 f k w test circuit for voltage gain ( 2 ) vs. frequency v in v o r l i a 10k w 150 w 150 w test circuit for anode current vs. load capacitance c l c l handle this product the same as with other integrated circuits against static electricity. i a = 2ma i c = 1.7ma t a = 25?c r l = 10k w 10 -3 10 -2 10 -1 fig.20 collector-emitter saturation voltage vs. ambient temperature v ce ( sat ) ( v ) v k =v ref i c = 1ma i a = 10ma v k =v ref v ce =5v t a = 25?c fig.18-b voltage gain ( 2 ) vs. frequency frequency f ( khz) oscilating stable area d stable area c a b b a area a v k =v ref b v a =5v ( at i a = 10ma ) c v a = 10v ( at i a = 10ma ) d v a = 15v ( at i a = 10ma ) t a = 25?c collector-emitter saturation voltage test circuit ( b, c, d ) test circuit ( a ) 1 000 as for other general cautions, refer to the chapter precautions for use fig.19 anode current vs. load capacitance 1 l
115 application circuits notice l the circuit application examples in this publication are provided to explain representative applications of sharp devices and are not intended to guarantee any circuit design or license any intellectual property rights. sharp takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of sharp's devices. l contact sharp in order to obtain the latest device specification sheets before using any sharp device. sharp reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. manufacturing locations are also subject to change without notice. l observe the following points when using any devices in this publication. sharp takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) the devices in this publication are designed for use in general electronic equipment designs such as: --- personal computers --- office automation equipment --- telecommunication equipment [terminal] --- test and measurement equipment --- industrial control --- audio visual equipment --- consumer electronics (ii)measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when sharp devices are used for or in connection with equipment that requires higher reliability such as: --- transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- traffic signals --- gas leakage sensor breakers --- alarm equipment --- various safety devices, etc. (iii)sharp devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- space applications --- telecommunication equipment [trunk lines] --- nuclear power control equipment --- medical and other life support equipment (e.g., scuba). l contact a sharp representative in advance when intending to use sharp devices for any "specific" applications other than those recommended by sharp or when it is unclear which category mentioned above controls the intended use. l if the sharp devices listed in this publication fall within the scope of strategic products described in the foreign exchange and foreign trade control law of japan, it is necessary to obtain approval to export such sharp devices. l this publication is the proprietary product of sharp and is copyrighted, with all rights reserved. under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of sharp. express written permission is also required before any use of this publication may be made by a third party. l contact and consult with a sharp representative if there are any questions about the contents of this publication.
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