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| savantic semiconductor product specification silicon npn power transistors 2SC3055 description with to-220c package high breakdown voltage wide area of safe operation applications for switching regulator applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25) symbol parameter conditions value unit v cbo collector-base voltage open emitter 450 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 2 a i cp collector current-pulse pw - 300s,duty cycle - 10% 4 a p c collector power dissipation t c =25 15 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC3055 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =5ma ; r be = < 400 v v (br)cbo collector-base breakdown voltage i c =1ma ; i e =0 450 v v (br)ebo emitter-base breakdown voltage i e =1ma ; i c =0 7 v v ce (sat) collector-emitter saturation voltage i c =0.5a; i b =0.1a 1.0 v v be (sat) base-emitter saturation voltage i c =0.5a; i b =0.1a 1.2 v i cbo collector cut-off current v cb =400v ;i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe-1 dc current gain i c =0.1a ; v ce =5v 20 80 h fe-2 dc current gain i c =1a ; v ce =5v 8 f t transition frequency i c =0.2a ; v ce =10v 28 mhz c ob output capacitance f=1mhz ; v cb =10v 25 pf savantic semiconductor product specification 3 silicon npn power transistors 2SC3055 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) |
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