IRGC15B120UB www.irf.com 03/20/02 die in wafer form pd - 93865a mechanical data electrical characteristics (wafer form) die outline nominal backmetal composition, (thickness) al - ti - ni/v - ag, (1ka - 1ka - 4ka - 6ka) nominal front metal composition, (thickness) 99% al/1% si, (4m) dimensions 0.170" x 0.243" wafer diameter 150mm, with std. < 100 > flat wafer thickness, tolerance 185m, +/-15m relevant die mechanical dwg. number 01-5381 minimum street width 100m reject ink dot size 0.25mm diameter minimum ink dot location consistent throughout same wafer lot recommended storage environment store in original container, in dessicated nitrogen, with no contamination recommended die attach conditions for optimum electrical results, die attach temperature should not exceed 300c parameter description guaranteed (min, max) test conditions v ce (on) collector-to-emitter saturation voltage 2.85v min, 3.45v max i c = 10a, t j = 25c, v ge = 15v v (br)ces colletor-to-emitter breakdown voltage 1200v min t j = 25c, i ces = 125a, v ge = 0v v ge(th) gate threshold voltage 4.4v min, 6.0v max v ge = v ce , t j =25c, i c = 125a i ces zero gate voltage collector current 7a max t j = 25c, v ce = 1200v i ges gate-to-emitter leakage current 1.1a max t j = 25c, v ge = +/-20v e c g 1200v i c(nom) =15a v ce(on) typ. =3.67v @ i c(nom) @ 25 c ultrafast igbt short circuit rated 150mm wafer features features features features features gen5 non punch through (npt) technology ultrafast 10 s short circuit capability square rbsoa positive v ce(on) temperature coefficient benefits benchmark efficiency above 20khz optimized for welding, ups, and induction heating rugged with ultrafast performance excellent current sharing in parallel operation
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