i c , nom 450 a i c 600 a min. typ. max. - 1,7 2,15 v - 2,0 t.b.d. v gateladung v ge = -15v...+15v q g - gate charge nf - 1,5 f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v - c res collector emitter cut off current i ces rckwirkungskapazit?t reverse transfer capacitance eingangskapazit?t input capacitance f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v prepared by: mod-d2; mark mnzer v cesat revision: 2.0 v ges 2 repetitive peak forward current v ces i crm t c = 25c dc collector current h?chstzul?ssige werte / maximum rated values kollektor emitter sperrspannung kv 2,5 vorl?ufige daten preliminary data a 1200 v v 35 k a2s technische information / technical information fs450r12ke3 igbt-module igbt-modules i ges charakteristische werte / characteristic values approved: sm tm; wilhelm rusche v r = 0v, t p = 10ms, t vj = 125c isolations prfspannung insulation test voltage rms, f= 50hz, t= 1min. kollektor emitter s?ttigungsspannung i c = 450a, v ge = 15v, t vj = 25c collector emitter saturation voltage i c = 450a, v ge = 15v, t vj = 125c gate schwellenspannung i c = 18ma, v ce = v ge , t vj = 25c gate threshold voltage date of publication: 2002-10-28 kollektor emitter reststrom collector emitter voltage t vj = 25 c elektrische eigenschaften / electrical properties dc forward current t c = 80c kollektor dauergleichstrom kw p tot a 900 dauergleichstrom i f 450 t c = 25c; transistor repetitive peak collector current t p = 1ms, t c = 80c periodischer kollektor spitzenstrom gesamt verlustleistung +/- 20 gate emitter peak voltage total power dissipation gate emitter spitzenspannung 900 a grenzlastintegral v 5,8 v isol transistor wechselrichter / transistor inverter periodischer spitzenstrom t p = 1ms i frm nf 32 - 4,3 - c - 400 6,5 - - - - 5 5,0 i2t value i2t v ge(th) c ies na gate emitter leakage current gate emitter reststrom v ce = 0v, v ge = 20v, t vj = 25c ma v ge = 0v, t vj = 25c, v ce = 600v 1 (8) db_fs450r12ke3_2.0 2002-10-28
vorl?ufige daten preliminary data technische information / technical information fs450r12ke3 igbt-module igbt-modules min. typ. max. - 0,25 - s - 0,30 - s - 0,09 - s - 0,10 - s - 0,55 - s - 0,65 - s - 0,13 - s - 0,16 - s - 1,65 2,15 v - 1,65 t.b.d. v - 315 - a - 405 - a - 45 - c - 85 - c - 21 - mj - 39 - mj v r = 600v, v ge = -15v, t vj = 25c v r = 600v, v ge = -15v, t vj = 125c transistor wechselrichter / transistor inverter t d,on anstiegszeit (induktive last) rise time (inductive load) i c = 450a, v cc = 600v t r v r = 600v, v ge = -15v, t vj = 25c i f = 450a, -di f /dt= 5200a/s durchlassspannung charakteristische werte / characteristic values i f = 450a, v ge = 0v, t vj = 25c i f = 450a, v ge = 0v, t vj = 125c einschaltverz?gerungszeit (induktive last) turn on delay time (inductive load) v ge = 15v, r g = 1,6 ? , t vj = 125c abschaltverz?gerungszeit (induktive last) turn off delay time (inductive load) v r = 600v, v ge = -15v, t vj = 125c v f forward voltage rckstromspitze peak reverse recovery current i rm - - t f v ge = 15v, r g = 1,6 ? , t vj = 25c v ge = 15v, r g = 1,6 ? , t vj = 125c - 33 i c = 450a, v cc = 600v i c = 450a, v cc = 600v charakteristische werte / characteristic values v ge = 15v, r g = 1,6 ? , t vj = 25c i c = 450a, v cc = 600v t d,off v ge = 15v, r g = 1,6 ? , t vj = 25c v ge = 15v, r g = 1,6 ? , t vj = 125c r cc/ee t c = 25c - mj - mj e on i c = 450a, v cc = 600v, l = 80nh v ge = 15v, r g = 1,6 ? , t vj = 125c m ? - 65 sc data v cc = 900v, v cemax = v ces - l ce di/dt turn off energy loss per pulse e off i c = 450a, v cc = 600v, l = 80nh v ge = 15v, r g = 1,6 ? , t vj = 125c diode wechselrichter / diode inverter 1,1 q r ausschaltenergie pro puls reverse recovery energy e rec i f = 450a, -di f /dt= 5200a/s leitungswiderstand, anschluss-chip lead resistance, terminal-chip - nh stray inductance module modulinduktivit?t l ce - 20 einschaltverlustenergie pro puls turn on energy loss per pulse ausschaltverlustenergie pro puls fallzeit (induktive last) fall time (inductive load) v ge = 15v, r g = 1,6 ? , t vj = 25c v ge = 15v, r g = 1,6 ? , t vj = 125c kurzschlussverhalten t p 10s, v ge 15v, t vj 125c i sc - 1800 - a sperrverz?gerungsladung recovered charge i f = 450a, -di f /dt= 5200a/s v r = 600v, v ge = -15v, t vj = 25c v r = 600v, v ge = -15v, t vj = 125c 2 (8) db_fs450r12ke3_2.0 2002-10-28
vorl?ufige daten preliminary data technische information / technical information fs450r12ke3 igbt-module igbt-modules min. typ. max. - - 0,060 k/w - - 0,100 k/w g weight - 6 nm g 910 terminal connection torque - m3 6 internal insulation cti 225 case, see appendix geh?use, siehe anlage innere isolation anzugsdrehmoment, elektr. anschlsse comperative tracking index m3 schraube / screw m5 anschlsse / terminals m6 gewicht al 2 o 3 abweichung von r 100 r 25 - k ? thermische eigenschaften / thermal properties -5 - 5 -5 bergangs w?rmewiderstand t vj max pro modul / per module paste = 1w/m*k / grease = 1w/m*k r thck thermal resistance, case to heatsink verlustleistung t c = 100c, r 100 = 493 ? ? r/r t c = 25c p 25 power dissipation b-value % - - charakteristische werte / characteristic values ntc-widerstand / ntc-thermistor nennwiderstand t c = 25c rated resistance deviation of r 100 b-wert r 2 = r 1 exp[b(1/t 2 - 1/t 1 )] b 25/50 k/w - 0,005 - 3375 - k 20 mw 150 - operation temperature maximum junction temperature betriebstemperatur c -- -40 - h?chstzul?ssige sperrschichttemp. - 125 lagertemperatur storage temperature this technical information specifies semiconductor devices but promises no characteristics. it is valid with the belonging technical notes. innerer w?rmewiderstand; dc thermal resistance, junction to case; dc transistor wechelr. / transistor inverter diode wechselrichter / diode inverter r thjc nm anzugsdrehmoment, mech. befestigung mounting torque t vj op mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. mechanische eigenschaften / mechanical properties 125 c c t stg -40 12,7 mm creepage distance kriechstrecke 10,0 mm clearance distance luftstrecke 3 (8) db_fs450r12ke3_2.0 2002-10-28
vorl?ufige daten preliminary data technische information / technical information fs450r12ke3 igbt-module igbt-modules output characteristic (typical) t v j = 125c output characteristic (typical) v ge = 15v a usgangs k enn li n i en f e ld (t yp i sc h) i c = f(v ce ) ausgangskennlinie (typisch) i c = f(v ce ) 0 150 300 450 600 750 900 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 v ce [v] i c [a] tvj = 25c tvj = 125c 0 150 300 450 600 750 900 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 v ce [v] i c [a] vge=19v vge=17v vge=15v vge=13v vge=11v vge=9v 4 (8) db_fs450r12ke3_2.0 2002-10-28
vorl?ufige daten preliminary data technische information / technical information fs450r12ke3 igbt-module igbt-modules durchlasskennlinie der inversdiode (typisch) i f = f(v f ) forward caracteristic of inverse diode (typical) bertragungscharakteristik (typisch) transfer characteristic (typical) i c = f(v ge ) v ce = 20v 0 150 300 450 600 750 900 5678910111213 v ge [v] i c [a] tvj=25c tvj=125c 0 150 300 450 600 750 900 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 v f [v] i f [a] tvj = 25c tvj = 125c 5 (8) db_fs450r12ke3_2.0 2002-10-28
vorl?ufige daten preliminary data technische information / technical information fs450r12ke3 igbt-module igbt-modules s c h a lt ver l us t e (t yp i sc h) switching losses (typical) e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) v ge =15v, i c =450a, v ce =600v, tv j =125c s c h a lt ver l us t e (t yp i sc h) switching losses (typical) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) v ge =15v, r g =1,6 ? , v ce =600v, t vj =125c 0 20 40 60 80 100 120 140 0 150 300 450 600 750 900 i c [a] e [mj] eon eoff erec 0 20 40 60 80 100 120 140 160 180 024681012141618 r g [ ? ] e [mj] eon eoff erec 6 (8) db_fs450r12ke3_2.0 2002-10-28
vorl?ufige daten preliminary data technische information / technical information fs450r12ke3 igbt-module igbt-modules 1,13 1,187e-05 2 30,23 2,601e-02 4 transienter w?rmewiderstand transient thermal impedance 1,87 1,187e-05 42,03 6,499e-02 50,43 2,601e-02 5,67 2,364e-03 sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) v ge =15v, r g =1,6 ? , t vj =125c i r i [k/kw] : igbt i [s] : igbt r i [k/kw] : diode i [s] : diode 1 25,22 6,499e-02 z thjc = f (t) 3 3,42 2,364e-03 0,001 0,01 0,1 1 0,001 0,01 0,1 1 10 t [s] z thjc [k/w] zth : igbt zth : diode ic,chip 0 150 300 450 600 750 900 1050 1200 0 200 400 600 800 1000 1200 1400 v ce [v] i c [a] ic,chip 7 (8) db_fs450r12ke3_2.0 2002-10-28
vorl?ufige daten preliminary data technische information / technical information fs450r12ke3 igbt-module igbt-modules geh?usema?e / schaltbild package outline / circuit diagram 8 (8) db_fs450r12ke3_2.0 2002-10-28
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