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1. product pro?le 1.1 general description npn general-purpose transistor and npn resistor-equipped transistor (ret) in one sot363 (sc-88) very small surface-mounted device (smd) plastic package. 1.2 features n general-purpose transistor: u 200 ma collector current i c n resistor-equipped transistor: u built-in bias resistors n simpli?es circuit design n reduces component count n reduces pick and place costs n very small smd plastic package n aec-q101 quali?ed 1.3 applications n inverter and switches n low-frequency ampli?er n driver stages 1.4 quick reference data puml1/dg 50 v, 200 ma npn general-purpose transistor/ 100 ma npn resistor-equipped transistor rev. 01 14 july 2008 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit tr1 (general-purpose transistor) v ceo collector-emitter voltage open base - - 50 v i c collector current - - 200 ma h fe dc current gain v ce =10v; i c =2ma 210 - 340 tr2 (resistor-equipped transistor) v ceo collector-emitter voltage open base - - 50 v i o output current - - 100 ma r1 bias resistor 1 (input) 7 10 13 k w r2/r1 bias resistor ratio 0.8 1 1.2
puml1_dg_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 14 july 2008 2 of 12 nxp semiconductors puml1/dg 50 v, 200 ma npn general-purpose transistor/100 ma npn ret 2. pinning information 3. ordering information 4. marking [1] * = -: made in hong kong * = p: made in hong kong * = t: made in malaysia * = w: made in china 5. limiting values table 2. pinning pin description simpli?ed outline graphic symbol 1 emitter tr1 2 base tr1 3 output (collector) tr2 4 gnd (emitter) tr2 5 input (base) tr2 6 collector tr1 13 2 4 5 6 65 4 12 3 r2 tr1 tr2 r1 006aab253 table 3. ordering information type number package name description version puml1/dg sc-88 plastic surface-mounted package; 6 leads sot363 table 4. marking codes type number marking code [1] puml1/dg pa* table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit tr1 (general-purpose transistor) v cbo collector-base voltage open emitter - 60 v v ceo collector-emitter voltage open base - 50 v v ebo emitter-base voltage open collector - 6 v i c collector current - 200 ma i cm peak collector current single pulse; t p 1ms - 200 ma i bm peak base current single pulse; t p 1ms - 100 ma
puml1_dg_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 14 july 2008 3 of 12 nxp semiconductors puml1/dg 50 v, 200 ma npn general-purpose transistor/100 ma npn ret [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. p tot total power dissipation t amb 25 c [1] - 200 mw tr2 (resistor-equipped transistor) v cbo collector-base voltage open emitter - 50 v v ceo collector-emitter voltage open base - 50 v v ebo emitter-base voltage open collector - 10 v v i input voltage positive - +40 v negative - - 10 v i o output current - 100 ma i cm peak collector current single pulse; t p 1ms - 100 ma p tot total power dissipation t amb 25 c [1] - 200 mw per device p tot total power dissipation t amb 25 c [1] - 300 mw t j junction temperature - 150 c t amb ambient temperature - 55 +150 c t stg storage temperature - 65 +150 c fr4 pcb, standard footprint fig 1. per transistor: power derating curve table 5. limiting values continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit t amb ( c) - 75 175 125 25 75 - 25 006aab254 100 200 300 p tot (mw) 0
puml1_dg_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 14 july 2008 4 of 12 nxp semiconductors puml1/dg 50 v, 200 ma npn general-purpose transistor/100 ma npn ret 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. table 6. thermal characteristics symbol parameter conditions min typ max unit per transistor r th(j-a) thermal resistance from junction to ambient in free air [1] - - 625 k/w per device r th(j-a) thermal resistance from junction to ambient in free air [1] - - 417 k/w fr4 pcb, standard footprint fig 2. per transistor: transient thermal impedance from junction to ambient as a function of pulse duration 006aab255 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 10 2 10 10 3 z th(j-a) ( k/w ) 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0
puml1_dg_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 14 july 2008 5 of 12 nxp semiconductors puml1/dg 50 v, 200 ma npn general-purpose transistor/100 ma npn ret 7. characteristics table 7. characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit tr1 (general-purpose transistor) i cbo collector-base cut-off current v cb =60v; i e =0a --10na v cb =60v; i e =0a; t j = 150 c --5 m a i ebo emitter-base cut-off current v eb =5v; i c =0a --10na h fe dc current gain v ce =2v; i c = 100 ma 90 - - v ce =10v; i c = 2 ma 210 - 340 v cesat collector-emitter saturation voltage i c = 100 ma; i b = 10 ma - - 250 mv f t transition frequency v ce =10v; i c = 2 ma; f = 100 mhz 100 - - mhz v ce =6v; i c =10ma; f = 100 mhz - 230 - mhz c c collector capacitance v cb =10v;i e =i e =0a; f=1mhz --3pf tr2 (resistor-equipped transistor) i cbo collector-base cut-off current v cb =50v; i e = 0 a - - 100 na i ceo collector-emitter cut-off current v ce =30v; i b =0a --1 m a v ce =30v; i b =0a; t j = 150 c --50 m a i ebo emitter-base cut-off current v eb =5v; i c = 0 a - - 400 m a h fe dc current gain v ce =5v; i c = 5 ma 30 - - v cesat collector-emitter saturation voltage i c = 10 ma; i b = 0.5 ma - - 150 mv v i(off) off-state input voltage v ce =5v; i c = 100 m a - 1.1 0.8 v v i(on) on-state input voltage v ce = 0.3 v; i c = 10 ma 2.5 1.8 - v r1 bias resistor 1 (input) 7 10 13 k w r2/r1 bias resistor ratio 0.8 1 1.2 c c collector capacitance v cb =10v;i e =i e =0a; f=1mhz - - 2.5 pf
puml1_dg_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 14 july 2008 6 of 12 nxp semiconductors puml1/dg 50 v, 200 ma npn general-purpose transistor/100 ma npn ret v ce =10v (1) t amb = 150 c (2) t amb =25 c (3) t amb = - 55 c t amb =25 c fig 3. tr1: dc current gain as a function of collector current; typical values fig 4. tr1: collector current as a function of collector-emitter voltage; typical values i c /i b =10 (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 150 c i c /i b =10 (1) t amb = 150 c (2) t amb =25 c (3) t amb = - 55 c fig 5. tr1: base-emitter saturation voltage as a function of collector current; typical values fig 6. tr1: collector-emitter saturation voltage as a function of collector current; typical values 006aab256 200 300 100 400 500 h fe 0 i c (ma) 10 - 1 10 3 10 2 110 (1) (2) (3) v ce (v) 010 8 46 2 006aaa993 0.04 0.06 0.02 0.08 0.1 i c (a) 0 i b (ma) = 0.56 0.50 0.44 0.38 0.32 0.26 0.20 0.14 0.08 0.02 006aab257 i c (ma) 10 - 1 10 3 10 2 110 0.5 0.9 1.3 v besat (v) 0.1 (1) (2) (3) 006aab258 i c (ma) 10 - 1 10 3 10 2 110 10 - 1 1 v cesat (v) 10 - 2 (1) (2) (3)
puml1_dg_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 14 july 2008 7 of 12 nxp semiconductors puml1/dg 50 v, 200 ma npn general-purpose transistor/100 ma npn ret v ce =5v (1) t amb = 150 c (2) t amb =25 c (3) t amb = - 40 c i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 40 c fig 7. tr2: dc current gain as a function of collector current; typical values fig 8. tr2: collector-emitter saturation voltage as a function of collector current; typical values v ce = 0.3 v (1) t amb = - 40 c (2) t amb =25 c (3) t amb = 100 c v ce =5v (1) t amb = - 40 c (2) t amb =25 c (3) t amb = 100 c fig 9. tr2: on-state input voltage as a function of collector current; typical values fig 10. tr2: off-state input voltage as a function of collector current; typical values i c (ma) 10 - 1 10 2 10 1 006aaa034 10 2 10 10 3 h fe 1 (1) (2) (3) i c (ma) 110 2 10 006aaa035 10 - 1 1 v cesat (v) 10 - 2 (1) (2) (3) 006aaa036 i c (ma) 10 - 1 10 2 10 1 1 10 v i(on) (v) 10 - 1 (2) (3) (1) 006aaa037 i c (ma) 10 - 2 10 1 10 - 1 1 10 v i(off) (v) 10 - 1 (1) (2) (3)
puml1_dg_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 14 july 2008 8 of 12 nxp semiconductors puml1/dg 50 v, 200 ma npn general-purpose transistor/100 ma npn ret 8. test information 8.1 quality information this product has been quali?ed in accordance with the automotive electronics council (aec) standard q101 - stress test quali?cation for discrete semiconductors , and is suitable for use in automotive applications. 9. package outline 10. packing information [1] for further information and the availability of packing methods, see section 14 . [2] t1: normal taping [3] t2: reverse taping fig 11. package outline sot363 (sc-88) 06-03-16 dimensions in mm 0.25 0.10 0.3 0.2 pin 1 index 1.3 0.65 2.2 2.0 1.35 1.15 2.2 1.8 1.1 0.8 0.45 0.15 13 2 4 65 table 8. packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 10000 puml1/dg sot363 4 mm pitch, 8 mm tape and reel; t1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; t2 [3] -125 -165
puml1_dg_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 14 july 2008 9 of 12 nxp semiconductors puml1/dg 50 v, 200 ma npn general-purpose transistor/100 ma npn ret 11. soldering fig 12. re?ow soldering footprint sot363 (sc-88) fig 13. wave soldering footprint sot363 (sc-88) solder lands solder resist occupied area solder paste sot363_fr 2.65 2.35 0.4 (2 ) 0.6 (2 ) 0.5 (4 ) 0.5 (4 ) 0.6 (4 ) 0.6 (4 ) 1.5 1.8 dimensions in mm sot363_fw solder lands solder resist occupied area preferred transport direction during soldering 5.3 1.3 1.3 1.5 0.3 1.5 4.5 2.45 2.5 dimensions in mm
puml1_dg_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 14 july 2008 10 of 12 nxp semiconductors puml1/dg 50 v, 200 ma npn general-purpose transistor/100 ma npn ret 12. revision history table 9. revision history document id release date data sheet status change notice supersedes puml1_dg_1 20080714 product data sheet - -
puml1_dg_1 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 01 14 july 2008 11 of 12 nxp semiconductors puml1/dg 50 v, 200 ma npn general-purpose transistor/100 ma npn ret 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 13.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 13.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors puml1/dg 50 v, 200 ma npn general-purpose transistor/100 ma npn ret ? nxp b.v. 2008. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 14 july 2008 document identifier: puml1_dg_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 15. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 8.1 quality information . . . . . . . . . . . . . . . . . . . . . . 8 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 packing information. . . . . . . . . . . . . . . . . . . . . . 8 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 13.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 14 contact information. . . . . . . . . . . . . . . . . . . . . 11 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

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