vishay siliconix si1037x document number: 70686 s10-2544-rev. d, 08-nov-10 www.vishay.com 1 p-channel 1.8 v (g-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? low threshold ? smallest little foot ? package: 1.6 mm x 1.6 mm ? low 0.6 mm profile ? compliant to rohs directive 2002/95/ec applications ? cell phones and pagers - load switch ? battery oper ated systems product summary v ds (v) r ds(on) ( ? )i d (a) - 20 0.195 at v gs = - 4.5 v - 0.84 0.260 at v gs = - 2.5 v - 0.73 0.350 at v gs = - 1.8 v - 0.64 sc-89 (6-leads) 6 4 1 2 3 5 top view d d g d d s marking code nwl lot traceability and date code part number code ordering information: SI1037X-T1-GE3 (lead (pb)-free and halogen-free) notes: a. surface mounted on 1" x 1" fr4 board with minimum copper. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol 5 s steady state unit drain-source voltage v ds - 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) a t a = 25 c i d - 0.84 - 0.77 a t a = 70 c - 0.68 - 0.62 pulsed drain current i dm - 4 continuous diode current (diode conduction) a i s - 0.18 - 0.14 maximum power dissipation a t a = 25 c p d 0.21 0.17 w t a = 70 c 0.13 0.10 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t ? 5 s r thja 500 600 c/w steady state 600 720
www.vishay.com 2 document number: 70686 s10-2544-rev. d, 08-nov-10 vishay siliconix si1037x notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics (t a = 25 c, unless otherwise noted) specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.45 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 a v ds = - 20 v, v gs = 0 v, t j = 70 c - 5 on-state drain current a i d(on) v ds = - 5 v, v gs = - 4.5 v - 4 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 0.77 a 0.160 0.195 ? v gs = - 2.5 v, i d = - 0.67 a 0.212 0.260 v gs = - 1.8 v, i d = - 0.2 a 0.290 0.350 forward transconductance a g fs v ds = - 10 v, i d = - 0.77 a 3.1 s diode forward voltage a v sd i s = - 0.14 a, v gs = 0 v - 0.78 - 1.2 v dynamic b total gate charge q g v ds = - 10 v, v gs = - 4.5 v, i d = - 0.77 a 3.5 5.5 nc gate-source charge q gs 0.65 gate-drain charge q gd 0.60 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 20 ? i d ? - 0.5 a, v gen = - 4.5 v, r g = 6 ? 10 20 ns rise time t r 15 30 turn-off delay time t d(off) 30 60 fall time t f 10 20 source-drain reverse recovery time t rr i f = - 0.14 a, di/dt = 100 a/s 20 40 output characteristics 0.0 0.8 1.6 2.4 3.2 4.0 0.0 0.8 1.6 2.4 3.2 4.0 v gs = 5 v thru 2.5 v 1.5 v v ds - drain-to-source voltage (v) - drain current (a) i d 1 v 2 v transfer characteristics 0.0 0.8 1.6 2.4 3.2 4.0 0.0 0.5 1.0 1.5 2.0 2.5 t c = - 55 c 125 c v gs - gate-to-source voltage (v) - drain current (a) i d 25 c
document number: 70686 s10-2544-rev. d, 08-nov-10 www.vishay.com 3 vishay siliconix si1037x typical characteristics (t a = 25 c, unless otherwise noted) on-resistance vs. drain current gate charge source-drain diode forward voltage - on-resistance ( ) r ds(on) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 01234 i d - drain current (a) v gs = 1.8 v v gs = 2.5 v v gs = 4.5 v 0 1 2 3 4 5 01234 v ds = 10 v i d = 0.77 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 150 c t j = 25 c 4 1 0.1 v sd - source-to-drain voltage (v) - source current (a) i s capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 100 200 300 400 500 600 048121620 v ds - drain-to-source voltage (v) c rss c oss c iss c - capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 4.5 v i d = 0.77 a t j - junction temperature (c) (normalized) - on-resistance r ds(on) 0.0 0.1 0.2 0.3 0.4 0.5 012345 i d = 0.77 a - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) i d = 0.2 a
www.vishay.com 4 document number: 70686 s10-2544-rev. d, 08-nov-10 vishay siliconix si1037x typical characteristics (t a = 25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70686 . threshold voltage - 0.15 - 0.05 0.05 0.15 0.25 0.35 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a variance (v) v gs(th) t j - temperature (c) single pulse power, junction-to-ambient 0 1 4 2 3 power (w) time (s) 1 600 10 10 -1 10 -2 100 normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 600 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
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