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inchange semiconductor product specification silicon pnp power transistors 2sa907/908/909 description with to-3 package complement to type 2sc1584/1585/1586 applications for power switching and general purpose applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2sa907 -100 2sa908 -150 v cbo collector-base voltage 2SA909 open emitter -200 v 2sa907 -100 2sa908 -150 v ceo collector-emitter voltage 2SA909 open base -200 v v ebo emitter-base voltage open collector -6 v i c collector current -15 a i b b base current -5 a p c collector power dissipation t c =25 150 w t j junction temperature 150 t stg storage temperature -65~150 fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification silicon pnp power transistors 2sa907/908/909 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2sa907 -100 2sa908 -150 v (br)ceo collector-emitter breakdown voltage 2SA909 i c =-50ma ;i b =0 -200 v v cesat collector-emitter saturation voltage i c =-10a; i b =-1a -3.0 v 2sa907 v cb =-100v; i e =0 2sa908 v cb =-150v; i e =0 i cbo collector cut-off current 2SA909 v cb =-200v; i e =0 -1.0 ma i ebo emitter cut-off current v eb =-6v; i c =0 -1.0 ma h fe dc current gain i c =-5a ; v ce =-4v 30 f t transition frequency i c =-0.5a ; v ce =-12v 10 mhz 2
inchange semiconductor product specification silicon pnp power transistors 2sa907/908/909 package outline 3 fig.2 outline dimensions (unindicated tolerance: 0.1mm)

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