continental device india limited data sheet page 1 of 3 C43C2 pnp plastic power transistor complementary c42c series general purpose applications absolute maximum ratings collector-emitter voltage (v be =0) v ces max. 40 v collector-emitter voltage (open base) v ceo max. 30 v collector current i c max. 3 a total power dissipation up to t c = 25c p d max. 12.5 w junction temperature t j max. 150 c collector-emitter saturation voltage i c = 1 a; i b = 50 ma v cesat max. 0.5 v d.c. current gain i c = 200 ma; v ce = 1 v h fe min. 40 max. 120 ratings (at t a =25c unless otherwise specified) limiting values collector-emitter voltage (v be =0) v ces max. 40 v collector-emitter voltage (open base) v ceo max. 30 v emitter-base voltage (open collector) v ebo max. 5.0 v collector current (dc) i c max. 3.0 a C43C2 is / iecqc 700000 is / iecqc 750100 is/iso 9002 lic# qsc/l- 000019.2 continental device india limited an is/iso 9002 and iecq certified manufacturer all dimensions in mm pin configuration 1. emitter 2. collector 3. base 1 3 2 to-126 (sot-32) plastic package
continental device india limited data sheet page 2 of 3 collector current (peak)* i cm max. 5 a base current i b max. 2 a total power dissipation up to t a = 25c p d max. 2.1 w total power dissipation up to t c = 25c p d max. 12.5 w junction temperature t j max. 150 oc storage temperature t stg ?65 to +150 oc thermal resistance from junction to case r th j?c =10 c/w from junction to ambient r th j?a =60 c/w characteristics t c = 25c unless otherwise specified collector cutoff current v be = 0; v ce = rated v ces i ces max. 10 a emitter cut-off current i c = 0; v eb = 5 v i ebo max. 100 a breakdown sus. voltage i c = 100 ma; i b = 0 v ceo(sus) * min. 30 v saturation voltages i c = 1 a; i b = 50 ma v cesat * max. 0.5 v i c = 1 a; i b = 100 ma v besat * max. 1.3 v d.c. current gain i c = 200 ma; v ce = 1 v h fe * min. 40 max. 120 i c = 1 a; v ce = 1 v h fe * min. 20 transition frequency i c = 20 ma; v ce = 4 v f t typ. 40 mhz collector capacitance v cb = 10 v; i e = 0; f = 1 mhz c cbo max. 125 pf switching time delay time + rise time i c = 1 a; i b1 = i b2 = 0.1 a t d +t r typ. 50 ns storage time + fall time v cc = 30 v; t p = 25 sec t s typ. 500 ns t f typ. 50 ns * pulsed test: p w = 300 ms; duty cycle = 2%. C43C2
continental device india limited data sheet page 3 of 3 notes disclaimer the product information and the selection guides facilitate selection of the cdil's discrete semiconductor device(s) best suite d for application in your product(s) as per your requirement. it is recommended that you completely review our data sheet(s) so a s to confirm that the device(s) meet functionality parameters for your application. the information furnished on the cdil web sit e/ cd is believed to be accurate and reliable. cdil however, does not assume responsibility for inaccuracies or incomplete information. furthermore, cdil does not assume liability whatsoever, arising out of the application or use of any cdil product; neither does it convey any license under its patent rights nor rights of others. these products are not designed for use in lif e saving/support appliances or systems. cdil customers selling these products (either as individual discrete semiconductor devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and cdil will not be responsible for any damages resulting from such sale(s). cdil strives for continuous improvement and reserves the right to change the specifications of its products without prior notic e. cdil is a registered trademark of continental device india limited c-120 naraina industrial area, new delhi 110 028, india. telephone + 91-11-579 6150 fax + 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com
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