asdl-6770 high performance silicon npn phototransistor in side look package data sheet description asdl-6770 is a silicon phototransistor encapsulated in clear molded side look package. it has high sensitivity with low dark current and fast response time. collector is denoted by a fat on the packaging diagram and the shorter of the two leads. this device matches with infrared emitter asdl-4770 and is ideal for low cost, high volume applications. features ? clear side look package ? wide spectral response ? high sensitivity ? high speed ? low dark current ? narrow viewing angle ? low cost ? lead free & rohs compliant ? available in tape & reel applications ? detector in consumer electronics ? detector industrial electronics & equipment ? coin counters ? position sensing ? ir data communication ? photo interrupter
notes: 1. all dimensions are in millimeters (inches) 2. tolerance is + 0.25mm (.010) unless otherwise noted 3. lead spacing is measured where leads emerge from package 4. specifcations are subject to change without notice. package dimensions ordering information part number lead form color packaging shipping option asdl-6770-c asdl-6770-c4 straight clear tape & reel bulk 4000pcs 0kpcs / carton
absolute maximum ratings at t a =25 c parameter symbol min. max unit power dissipation p diss 00 mw collector emitter voltage v ceo 0 v emitter collector voltage v eco 5 v operating temperature t o -40 85 c storage temperature t s -55 00 c junction temperature t j 0 c lead soldering temperature [ .6mm (0.06 ) from body ] 60 c for 5 seconds electrical characteristics at 25 c parameter symbol min. typ. max. unit condition collector-emitter breakdown voltage v (br)ceo 0 v ic= ma ee = 0mw/cm emitter-collector breakdown voltage v (br)eco 5 v ie = 00a ee = 0mw/cm collector emitter saturation voltage v ce(sat) 0.4 v ic = 0. ma ee = mw/cm collector dark current i ceo 00 na vce= 0v ee=0mw/cm thermal resistance, junction to pin r q jp 50 c/w optical characteristics at 25 c parameter symbol min. typ. max. unit condition viewing angle q / 40 deg wavelength of peak sensitivity pk 900 nm spectral bandwidth ? 400 900 00 nm rise time t r 0 s vcc = 5v ic = ma rl = k? fall time t f 5 s vcc = 5v ic = ma rl = k? on state collector current ic(on) .04 .40 ma vce = 5v ee = mw/cm = 940nm
typical electrical/optical characteristics curves (t a =25?c unless otherwise indicated) ta-ambient temperature- c 40 0 80 o 120 iceo-collector dark current- a 0 0.01 0.1 100 1 10 ta-ambient temperature- c 0 20 40 60 80 120 100 collector power dissipation pc(mw) -20 -40 0 4 0 20 60 100 o 80 140 tr tf-rise and fall time- s 120 100 20 0 80 60 40 200 180 160 rl-load resistance-k 0 2 4 6 8 10 pw =1m s f =100h z vrl=1v vcc=5v 4 ee-irradiance-mw/cm 0 1 3 2 5 2 relative collector current 3.0 2.0 1.0 0 4.0 vce= 5v 0.5 0.6 0.3 0.1 0.4 0.2 relative sensitivity 0.7 0.8 0.9 1.0 o 0 o 10 o 20 70 80 90 o o 50 60 o o 40 o o 30 o figure 1. collector dark current vs ambient temperature figure 2. collector power dissipation vs ambient temperature figure 4. relative collector current vs irradiance figure 3. rise and fall time vs load resistance figure 5. sensitivity diagram for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies, limited in the united states and other countries. data subject to change. copyright ? 007 avago technologies limited. all rights reserved. av0 -00 4en - january , 007
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