high voltage pnp silicon power transistors ...des igned for line operated audio output amplifier, switchmode power supply drivers and other switching applications. ? 300 v to 400 v (min) e v ceo(sus) ? 1.0 a rated collector current ? popular to220 plastic package ? pnp complements to the tip47 thru tip50 series ??????????????????????? ??????????????????????? maximum ratings ??????????? ? ????????? ? ??????????? rating ??? ? ? ? ??? symbol ???? ? ?? ? ???? mje573 0 ???? ? ?? ? ???? mje573 1 ??? ? ? ? ??? mje573 1a ??? ? ? ? ??? unit ??????????? ??????????? collectoremitter voltage ??? ??? v ceo ???? ???? 300 ???? ???? 350 ??? ??? 375 ??? ??? vdc ??????????? ??????????? collectorbase voltage ??? ??? v cb ???? ???? 300 ???? ???? 350 ??? ??? 375 ??? ??? vdc ??????????? ??????????? emitterbase voltage ??? ??? v eb ????????? ????????? 5.0 ??? ??? vdc ??????????? ??????????? collector current e continuous peak ??? ??? i c ????????? ????????? 1.0 3.0 ??? ??? adc ??????????? ??????????? base current ??? ??? i b ????????? ????????? 1.0 ??? ??? adc ??????????? ? ????????? ? ? ????????? ? ??????????? total power dissipation @ t c = 25 c derate above 25 c ??? ? ? ? ? ? ? ??? p d ????????? ? ??????? ? ? ??????? ? ????????? 40 0.32 ??? ? ? ? ? ? ? ??? watts w/ c ??????????? ? ????????? ? ??????????? total power dissipation @ t a = 25 c derate above 25 c ??? ? ? ? ??? p d ????????? ? ??????? ? ????????? 2.0 0.016 ??? ? ? ? ??? watts w/ c ??????????? ? ????????? ? ??????????? unclamped inducting load energy (see figure 10) ??? ? ? ? ??? e ????????? ? ??????? ? ????????? 20 ??? ? ? ? ??? mj ??????????? ??????????? operating and storage junction temperature range ??? ??? t j , t stg ????????? ????????? 65 to +150 ??? ??? c ????????????????????????????????? ????????????????????????????????? thermal characteristics ?????????????????? ?????????????????? characteristic ?????? ?????? symbol ???????? ???????? max ???? ???? unit ?????????????????? ?????????????????? thermal resistance, junction to case ?????? ?????? r q jc ???????? ???????? 3.125 ???? ???? c/w ?????????????????? ?????????????????? thermal resistance, junction to ambient ?????? ?????? r q ja ???????? ???????? 62.5 ???? ???? c/w on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 4 1 publication order number: mje5730/d mje5730 mje5731 mje5731a 1.0 ampere power transistors pnp silicon 300350400 volts 40 watts case 221a09 to220ab style 1: pin 1. base 2. collector 3. emitter 4. collector 1 2 3 4
mje5730 mje5731 mje5731a http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (1) (i c = 30 madc, i b = 0) mje5730 mje5731 mje5731a ????? ? ??? ? ? ??? ? ????? v ceo(sus) ??? ? ? ? ? ? ? ??? 300 350 375 ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 200 vdc, i b = 0) mje5730 (v ce = 250 vdc, i b = 0) mje5731 (v ce = 300 vdc, i b = 0) mje5731a ????? ? ??? ? ? ??? ? ????? i ceo ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? 1.0 1.0 1.0 ??? ? ? ? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 300 vdc, v be = 0) mje5730 (v ce = 350 vdc, v be = 0) mje5731 (v ce = 400 vdc, v be = 0) mje5731a ????? ? ??? ? ? ??? ? ????? i ces ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? 1.0 1.0 1.0 ??? ? ? ? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ?????????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? e ???? ? ?? ? ???? 1.0 ??? ? ? ? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ?????????????????????? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 0.3 adc, v ce = 10 vdc) (i c = 1.0 adc, v ce = 10 vdc) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 30 10 ???? ? ?? ? ???? 150 e ??? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (i c = 1.0 adc, i b = 0.2 adc) ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? e ???? ? ?? ? ???? 1.0 ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter on voltage (i c = 1.0 adc, v ce = 10 vdc) ????? ? ??? ? ????? v be(on) ??? ? ? ? ??? e ???? ? ?? ? ???? 1.5 ??? ? ? ? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ?????????????????????? current gain e bandwidth product (i c = 0.2 adc, v ce = 10 vdc, f = 2.0 mhz) ????? ????? f t ??? ??? 10 ???? ???? e ??? ??? mhz ?????????????????????? ? ???????????????????? ? ?????????????????????? smallsignal current gain (i c = 0.2 adc, v ce = 10 vdc, f = 1.0 khz) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 25 ???? ? ?? ? ???? e ??? ? ? ? ??? e (1) pulse test: pulse width 300 m s, duty cycle 2.0%. v ce , collector-emitter voltage (volts) t j = 25 c 0.03 figure 1. dc current gain i c , collector current (amps) 2.0 0.02 0.03 0.05 0.1 0.2 0.5 1.0 2.0 30 10 3.0 figure 2. collectoremitter saturation voltage 0.02 i c , collector current (amps) 0 0.05 0.3 1.2 h fe , dc current gain 5.0 v ce = 10 v 1.0 2.0 1.4 1 t j = 150 c 20 0.5 0.3 0.8 0.6 0.1 v ce(sat)) @ i c /i b = 5.0 0.2 0.2 0.4 25 c -55 c 100 50 200 150 c -55 c
mje5730 mje5731 mje5731a http://onsemi.com 3 i c , collector current (amps) 1.0 0.8 v, voltage (v) 1.4 1.2 0.4 0 0.6 0.2 figure 3. baseemitter voltage 0.05 0.2 2.0 0.1 0.5 0.3 1.0 derating factor 1.0 0 t c , case temperature ( c) 0 50 175 0.8 0.6 0.4 0.2 75 100 125 figure 4. normalized power derating second breakdown derating thermal derating 0.02 0.03 v be(sat) @ i c /i b = 5.0 t j = - 55 c 25 c 150 c 25 150 10 5.0 figure 5. forward bias safe operating area v ce , collector-emitter voltage (volts) 5.0 2.0 0.5 0.01 30 100 bonding wire limit thermal limit second breakdown limit i c , collector current (amp) dc 500 m s 0.05 10 20 1.0ms 200 300 500 1.0 0.2 50 0.1 0.02 t c = 25 c 100 m s mje5730 mje5731 mje5732 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 5 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 6. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. t, time (ms) 1.0 0.01 1 k 0.3 0.2 0.07 r(t), transient thermal r q jc(t) = r(t) r q jc r q jc = 3.125 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) q jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.01 resistance (normalized) 0.7 figure 6. thermal response 0.5 0.1 0.05 0.03 0.02 0.02 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.2 single pulse d = 0.5 0.05 0.1 0.02 0.01
mje5730 mje5731 mje5731a http://onsemi.com 4 t 2 figure 7. switching time equivalent circuit turn-on pulse v be(off) v in approx . -11 v 0 v t 3 turn-off pulse t 1 7.0 ns 100 t 2 < 500 m s t 3 < 15 ns approx. +9.0 v duty cycle 2.0% v cc v in r c r b scope +4.0 v c jd << c eb 51 t 1 t, time (s) m t, time (s) m 0.02 0.2 2.0 0.1 0.05 0.5 1.0 5.0 i c , collector current (amps) t j = 25 c v cc = 200 v i c /i b = 5.0 2.0 1.0 0.5 0.2 0.1 0.05 figure 8. turnon resistive switching times figure 9. resistive turnoff switching times i c , collector current (amps) 0.01 1.0 0.5 0.1 0.05 0.02 0.02 0.2 2.0 0.1 0.05 0.5 1.0 t r t d t s t f t j = 25 c v cc = 200 v i c /i b = 5.0 0.2 0.03 0.3 0.03 0.3 0.3 3.0 0.03 0.3 input 50 50 v bb1 = 10 v r bb2 = 100 w tut v ce monitor 100 mh v cc = 20 v + - r bb1 = 150 w i c monitor r s = 0.1 w v bb2 = 0 + - test circuit voltage and current waveforms input voltage collector current collector voltage v ce(sat) 10 v v cer 0 v 0.63 a -5 v 0 v 100 ms t w 3 ms (see note 1) figure 10. inductive load switching mje171
mje5730 mje5731 mje5731a http://onsemi.com 5 package dimensions case 221a09 issue aa to220aa notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector
mje5730 mje5731 mje5731a http://onsemi.com 6 notes
mje5730 mje5731 mje5731a http://onsemi.com 7 notes
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