ar c hive inf o rmati o n archive information 1 mrf858s motorola rf device data the rf line designed for 24 volt uhf largeCsignal, common emitter, class a linear amplifier applications in industrial and commercial equipment operating in the range of 800C960 mhz. ? specified for v ce = 24 vdc, i c = 0.5 adc characteristics output power = 3.6 watts cw minimum power gain = 11 db minimum ito = +44.5 dbm typical noise figure = 6 db ? characterized with smallCsignal sCparameters and series equivalent largeCsignal parameters from 800C960 mhz ? silicon nitride passivated ? 100% tested for load mismatch stress at all phase angles with 30:1 vswr @ 24 vdc, i c = 0.5 adc and rated output power ? will withstand rf input overdrive of 0.85 w cw ? gold metallized, emitter ballasted for long life and resistance to metal migration ? circuit board photomaster available upon request by contacting rf tactical marketing in phoenix, az. maximum ratings rating symbol value unit collectorCemitter voltage v ceo 30 vdc collectorCbase voltage v cbo 55 vdc emitterCbase voltage v ebo 4 vdc total device dissipation @ t c = 50 c derate above 50 c p d 20 0.138 watts w/ c operating junction temperature t j 200 c storage temperature range t stg C65 to +150 c thermal characteristics characteristic symbol max unit thermal resistance (t j = 150 c, t c = 50 c) r jc 6.9 c/w electrical characteristics characteristic symbol min typ max unit off characteristics collectorCemitter breakdown voltage (i c = 20 ma, i b = 0) v (br)ceo 28 35 vdc collectorCemitter breakdown voltage (i c = 20 ma, v be = 0) v (br)ces 55 85 vdc collectorCbase breakdown voltage (i c = 20 ma, i e = 0) v (br)cbo 55 85 vdc emitterCbase breakdown voltage (i e = 1 ma, i c = 0) v (br)ebo 4 5 vdc collector cutoff current (v cb = 24 v, i e = 0) i ces 1 ma teflon is a registered trademark of du pont de nemours & co., inc. order this document by mrf858s/d semiconductor technical data class a 800C960 mhz 3.6 w (cw), 24 v npn silicon rf power transistor case 319aC02, style 2 ? motorola, inc. 1998 rev 3
ar c hive inf o rmati o n archive information mrf858s 2 motorola rf device data electrical characteristics continued characteristic symbol min typ max unit on characteristics dc current gain (i c = 0.1 a, v ce = 5 v) h fe 30 60 120 dynamic characteristics output capacitance (v cb = 24 v, f = 1 mhz) c ob 6.5 8 pf functional characteristics commonCemitter power gain (v ce = 24 v, i c = 0.5 a, f = 840C900 mhz, power output = 3.6 w) p g 11 12 db load mismatch (p o = 3.6 w) (v ce = 24 v, i c = 0.5 a, f = 840 mhz, load vswr = 30:1, all phase angles) no degradation in output power rf input overdrive (v ce = 24 v, i c = 0.5 a, f = 840 mhz) no degradation p in(over) 0.85 w third order intercept point (v ce = 24 v, i c = 0.5 a) (f1 = 900 mhz, f2 = 900.1 mhz, meas. @ imd 3rd order = C40 dbc) ito +44.5 +45.5 dbm noise figure (v ce = 24 v, i c = 0.5 a, f = 900 mhz) nf 6 db input return loss (v ce = 24 v, i c = 0.5 a, f = 840C900 mhz, power output = 3.6 w) irl C12 C9 db table 1. common emitter sCparameters v ce i c f s 11 s 21 s 12 s 22 v ce (v) i c (a) f (mhz) |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 24 0.5 800 820 840 860 880 900 920 940 960 0.942 0.942 0.941 0.940 0.941 0.940 0.940 0.940 0.940 167 166 166 166 165 165 165 164 164 1.493 1.453 1.415 1.379 1.351 1.320 1.289 1.252 1.222 50 50 49 48 47 46 45 44 43 0.027 0.027 0.028 0.028 0.029 0.030 0.030 0.031 0.031 58 58 59 59 59 59 59 59 59 0.538 0.541 0.545 0.550 0.553 0.557 0.562 0.566 0.570 C165 C164 C165 C165 C165 C165 C165 C165 C165 table 2. z in and z ol * versus frequency f (mhz) z in (ohms) z ol * (ohms) 840 870 900 1.1 1.1 1.2 2.9 3.5 3.5 9.9 9.5 9 C14.4 C14.6 C14.5 v ce = 24 v, i c = 0.5 a, p o = 3.6 w z ol * = conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency.
ar c hive inf o rmati o n archive information 3 mrf858s motorola rf device data b1, b2 short ferrite bead, fair rite (2743021447) c1 250 f, 50 vdc electrolytic capacitor c2, c5 10 f, 50 vdc electrolytic capacitor c3, c6 0.1 f, chip capacitor c4, c7 100 pf, chip capacitor c8, c15 43 pf, 100 mil chip capacitor c9, c10 10 pf, miniCunelco c11 5 pf, miniCunelco c12, c13, c14 0.8C8.0 pf, johanson gigatrim c15, c16 1000 pf, chip capacitor f1 1 a microCfuse l1, l2 10 turns, 20 awg, 0.150 id (10 ? 1/2 w resistor) l3 4 turns, 16 awg, 0.101 id l4 0.5 18 awg wire q1 mmbt2222alt1, npn transistor q2 bd136, pnp transistor r1 390 ? , 1/4 w r2 500 ? potentiometer, 1/4 w r3 7.5k ? , 1/4 w r4 2 x 4.7k ? , 1/4 w r5 56 ? , 2 w r6 75 ? , 1/4 w r7 4.7 ? , 1/4 w r8 4 ? , 10 w tl1, tl5 50 ? , microstrip transmission line tl2 microstrip transmission line tl3 microstrip transmission line tl4 microstrip transmission line v_supply +26 vdc 0.5 vdc due to resistor tolerance v ce +24 vdc @ 0.5 a board 0.030 glassCteflon ? 2 oz. cu, r = 2.55 figure 1. mrf858s class a rf test fixture schematic
ar c hive inf o rmati o n archive information mrf858s 4 motorola rf device data figure 2. performance in broadband circuit typical characteristics figure 3. output power & power gain versus input power figure 4. dc soa figure 5. dc soa (this device is mtbf limited for v ce < 20 vdc.) figure 6. mtbf factor versus junction temperature
ar c hive inf o rmati o n archive information 5 mrf858s motorola rf device data figure 7. mrf858s test fixture component layout mrf858s
mrf858s 6 motorola rf device data package dimensions case 319aC02 issue b
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