MTE2050-OH1S infrared emitting diode 2.electrical & optical characteristics (ta=25??) symbol min typ max unit po 11.0 mw vf 1.45 1.8 v ir 10 ?a ?p 880 nm ?? 60 nm ?? 12 deg. tr 1.5 ?s tf 0.8 ?s cj 15 pf p/t -0.5 %/?? v/t -1.5 mv/?? ?@ anode ?a cathode features high-output power narrow beam angle high reliability applications optical switches bar-code reader 1. absolute maximum ratings (ta=25??) symbol unit if ma ifp a vr v pd mw topr ?? tstg ?? tj ?? tls ?? *2:time 5 sec max,position:up to 3mm from the body 100 260 lead soldering temp.*2 *1:tw=10us,t=10ms ratings dimensions (unit:mm) 100 1 5 180 -20 to 80 -30 to 100 power dissipation operating temp. storage temp. junction temp. i t e m forward current (dc) forward current (pulse)*1 reverse voltage conditions if=50ma if=50ma vr=5v if=50ma if=50ma if=50ma ifp=50ma ifp=50ma 1mhz ,v=0v if=10ma if=10ma i t e m power output forward voltage reverse current temp. coefficient of vf peak wavelength spectral line half width half intensity beam angle rise time fall time junction capacitance temp. coefficient of po thermal derating curve 0 20 40 60 80 100 120 -30 0 30 60 90 ambient temperature(??) forward current(ma) forward i-v characteristics 0 20 40 60 80 100 120 0 1 2 3 forward voltage(v) forward current(ma) power output vs temperature if=10ma 0 20 40 60 80 100 120 140 -30 0 30 60 90 ambient temperature(??) relative power output(%) spectral output 0 20 40 60 80 100 120 780 880 980 wavelength(nm) relative power output(%) radiation pattern 0 20 40 60 80 100 120 -90 -60 -30 0 30 60 90 beam angle(deg.) relative power output(%) relative power vs forward current 0 50 100 150 200 250 0 25 50 75 100 125 forward current(ma) relative power output(%) forward voltage vs temperature if=10ma 1 1.1 1.2 1.3 1.4 1.5 1.6 -30 0 30 60 90 ambient temperature(??) forward voltage(v) optrans 2-6-11 masukata,tama-ku, kawasaki 214-0032.japan tel.81(44)932-6491 / fax.81(44)932-8281 e-male optrans@mb.kcom.ne.jp 2000710/23 009-lsf880n1
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