1 p4 item symbol ratings unit drain-source voltage v ds 150 v dsx *5 120 continuous drain current i d 23 pulsed drain current i d(puls] 92 gate-source voltage v gs 30 repetitive or non-repetitive i ar *2 23 maximum avalanche energy e as *1 242 maximum drain-source dv/dt dv ds /dt *4 20 peak diode recovery dv/dt dv/dt *3 5 max. power dissipation p d ta=25 c 1.67 tc=25 c 75 operating and storage t ch +150 temperature range t stg electrical characteristics (t c =25c unless otherwise specified) thermalcharacteristics 2sk3650-01l,s,sj fuji power mosfet n-channel silicon power mosfet features high speed switching low on-resistance no secondary breadown low driving power avalanche-proof applications switching regulators ups (uninterruptible power supply) dc-dc converters maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =150v v gs =0v v ds =120v v gs =0v v gs =30v i d =11.5a i d =11.5a v ds =25v v cc =48v i d =11.5a v gs =10v r gs =10 ? min. typ. max. units v v a na m ? s pf nc a v ns c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 1.667 75.0 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd i av v sd t rr q rr item drain-source breakdown voltaget gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge avalanche capability diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d =250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =75v v gs =0v f=1mhz v cc =48v i d =23a v gs =10v l=100 h t ch =25c i f =30a v gs =0v t ch =25c i f =23a v gs =0v -di/dt=100a/s t ch =25c v v a a v a mj kv/s kv/s w c c 150 3.0 5.0 25 250 10 100 54 70 816 1150 1730 200 300 17 26 13 20 15 23 34 51 15 23 34 51 9 13.5 12.5 19 23 1.10 1.65 130 0.6 -55 to +150 outline drawings *1 l=671h, vcc=48v *2 tch=150c < *3 i f =-i d , -di/dt=50a/s, vcc=bv dss , tch=150c < << equivalent circuit schematic gate(g) source(s) drain(d) super f ap-g series *4 v ds 150v *5 v gs =-30v = < v gs =10v
2 characteristics 2sk3650-01l,s,sj fuji power mosfet id=f(vgs):80s pulse test, vds=25v,tch=25c id=f(vds):80s pulse test,tch=25c gfs=f(id):80s pulse test, vds=25v,tch=25c rds(on)=f(id):80s pulse test, tch=25c 0 25 50 75 100 125 150 0 20 40 60 80 100 allowable power dissipation pd=f(tc) pd [w] tc [ c] 0123456 0 10 20 30 40 50 20v 7.0v 10v 8v 6.5v 7.5v 6.0v id [a] vds [v] typical output characteristics vgs=5.5v 012345678910 0.1 1 10 100 id[a] vgs[v] typical transfer characteristic 0.1 1 10 100 0.1 1 10 100 gfs [s] id [a] typical transconductance 0 5 10 15 20 25 30 35 40 45 50 0.00 0.05 0.10 0.15 0.20 0.25 0.30 7.0v 6.5v rds(on) [ ? ] id [a] typical drain-source on-state resistance 10v 20v 8v 7.5v 6.0v vgs= 5.5v -50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100 120 140 160 180 200 rds(on) [ m ? ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=11.5a,vgs=10v
3 2sk3650-01l,s,sj fuji power mosfet vgs=f(qg):id=23a, tch=25c if=f(vsd):80s pulse test,tch=25c t=f(id):vcc=48v, vgs=10v, rg=10 ? -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=1ma vgs(th) [v] tch [ c] 0 5 10 15 20 25 30 35 40 45 50 0 2 4 6 8 10 12 14 qg [c] typical gate charge characteristics vgs [v] 72v 48v vcc= 36v 10 -1 10 0 10 1 10 2 10p 100p 1n 10n c [f] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 typical switching characteristics vs. id td(on) tr tf td(off) t [ns] ?"$ 0 25 50 75 100 125 150 0 50 100 150 200 250 300 eav [mj] starting tch [ c] maximum avalanche energy vs. starting tch e(av)=f(starting tch):vcc=48v,i(av)<=23a
4 2sk3650-01l,s,sj fuji power mosfet i av =f(t av ):starting tch=25c. vcc=48v avalanche current i av [a] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [ o c/w] t [sec] 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth t av [sec] pre-solder see note: 1. trademark lot no. type name note: 1. guaranteed mark of avalanche ruggedness. connection gate drain source dimensions are in millimeters. fuji power mos fet 123 1 2 3 outline drawings (mm) type(l) gate drain source see note: 1. trademark lot no. dimensions are in millimeters. type name fuji power mos fet connection notes 1. ( ) : reference dimensions. note: 1. guaranteed mark of avalanche ruggedness. 2. the metal part is covered with the solder plating, part of cutting is without the solder plating. pre-solder fig. 1. fig. 1. out view solder plating 4 1 2 4 3 type(s) gate drain source see note: 1. trademark lot no. type name fuji power mos fet connection notes 1. ( ) : reference dimensions. note: 1. guaranteed mark of avalanche ruggedness. 2. the metal part is covered with the solder plating, part of cutting is without the solder plating. out view fig. 1. fig. 1. solder plating pre-solder dimensions are in millimeters. 2 4 1 3 type(sj)
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