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publication# 22286 rev: e amendment/ 0 issue date: november 29, 2000 this data sheet states amds current technical specifications regarding the products described herein. this data sheet may be revised by subsequent versions or modifications due to changes in technical specifications. am29f004b 4 megabit (512 k x 8-bit) cmos 5.0 volt-only boot sector flash memory distinctive characteristics n 5.0 volt single power supply operation minimizes system-level power requirements n high performance access times as fast as 55 ns n manufactured on 0.32 m process technology n ultra low power consumption (typical values at 5 mhz) 20 ma typical active read current 30 ma typical program/erase current 1 a typical standby mode current n flexible sector architecture one 16 kbyte, two 8 kbyte, one 32 kbyte, and seven 64 kbyte sectors supports full chip erase sector protection features: a hardware method of locking a sector to prevent any program or erase operations within that sector sectors can be locked in-system or via programming equipment temporary sector unprotect feature allows code changes in previously locked sectors n top or bottom boot block configurations available n minimum 1,000,000 write cycle guarantee per sector n package option 32-pin plcc n compatible with jedec standards pinout and software compatible with single- power supply flash superior inadvertent write protection n embedded algorithms embedded erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors embedded program algorithm automatically writes and verifies data at specified addresses n erase suspend/erase resume suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation n data# polling and toggle bits provides a software method of detecting program or erase operation completion n 20-year data retention at 125 c
2 am29f004b general description the am29f004b is a 4 mbit, 5.0 volt-only flash memory device organized as 524,288 bytes. the data appears on dq0Cdq7. the device is offered in a 32- pin plcc package. this device is designed to be pro- grammed in-system with the standard system 5.0 volt v cc supply. a 12.0 volt v pp is not required for program or erase operations. the device can also be programmed in standard eprom programmers. the device offers access times of 55, 70, 90, and 120 ns, allowing high speed microprocessors to operate without wait states. to eliminate bus contention each device has separate chip enable (ce#), write enable (we#) and output enable (oe#) controls. each device requires only a single 5.0 volt power supply for both read and write functions. internally generated and regulated voltages are provided for the program and erase operations. the am29f004b is entirely command set compatible with the jedec single-power-supply flash stan- dard . commands are written to the command register using standard microprocessor write timing. register contents serve as inputs to an internal state-machine that controls the erase and programming circuitry. write cycles also internally latch addresses and data needed for the programming and erase operations. reading data out of the device is similar to reading from other flash or eprom devices. device programming occurs by executing the program command sequence. this initiates the embedded program algorithm-an internal algorithm that automat- ically times the program pulse widths and verifies proper cell margin. device erasure occurs by executing the erase command sequence. this initiates the embedded erase algorithmCan internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. during erase, the device automatically times the erase pulse widths and verifies proper cell margin. the host system can detect whether a program or erase operation is complete by reading the dq7 (data# polling), or dq6 (toggle) status bits . after a program or erase cycle has been completed, the device is ready to read array data or accept another command. the sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. the device is fully erased when shipped from the factory. hardware data protection measures include a low v cc detector that automatically inhibits write operations during power transitions. the hardware sector protection feature disables both program and erase operations in any combination of sectors of memory. this can be achieved in-system or via programming equipment. the erase suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. true background erase can thus be achieved. the device offers a standby mode as a power-saving feature. once the system places the device into the standby mode power consumption is greatly reduced. amds flash technology combines years of flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effective- ness. the device electrically erases all bits within a sector simultaneously via fowler-nordheim tunnelling. the data is programmed using hot electron injection.
am29f004b 3 table of contents product selector guide . . . . . . . . . . . . . . . . . . . . . 4 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 connection diagrams . . . . . . . . . . . . . . . . . . . . . . . 5 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 6 logic symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ordering information . . . . . . . . . . . . . . . . . . . . . . . 7 device bus operations . . . . . . . . . . . . . . . . . . . . . . 8 table 1. am29f004b device bus operations ..................................8 requirements for reading array data ..................................... 8 writing commands/command sequences .............................. 8 program and erase operation status ...................................... 8 standby mode .......................................................................... 8 output disable mode ................................................................ 9 table 2. am29f004b top boot block sector addresses .................9 table 3. am29f004b bottom boot block sector addresses ............9 autoselect mode ..................................................................... 10 table 4. am29f004b autoselect codes (high voltage method) ....10 sector protection/unprotection ............................................... 10 figure 1. in-system sector protect/sector unprotect algorithms ...11 temporary sector unprotect .................................................. 12 figure 2. temporary sector unprotect operation ...........................12 hardware data protection ...................................................... 13 low v cc write inhibit ......................................................................13 write pulse glitch protection ........................................................13 logical inhibit ..................................................................................13 power-up write inhibit ....................................................................13 command definitions . . . . . . . . . . . . . . . . . . . . . . 14 reading array data ................................................................ 14 reset command ..................................................................... 14 autoselect command sequence ............................................ 14 byte program command sequence ....................................... 14 figure 3. program operation ..........................................................15 chip erase command sequence ........................................... 15 sector erase command sequence ........................................ 15 figure 4. erase operation ...............................................................16 erase suspend/erase resume commands ........................... 17 command definitions ............................................................. 18 table 5. am29f004b command definitions ...................................18 write operation status . . . . . . . . . . . . . . . . . . . . . 19 dq7: data# polling ................................................................. 19 figure 5. data# polling algorithm ...................................................19 dq6: toggle bit i .................................................................... 20 dq2: toggle bit ii ................................................................... 20 reading toggle bits dq6/dq2 .............................................. 20 dq5: exceeded timing limits ................................................ 20 dq3: sector erase timer ....................................................... 21 figure 6. toggle bit algorithm ........................................................ 21 table 6. write operation status ..................................................... 22 absolute maximum ratings . . . . . . . . . . . . . . . . 23 figure 7. maximum negative overshoot waveform ...................... 23 figure 8. maximum positive overshoot waveform ........................ 23 operating ranges . . . . . . . . . . . . . . . . . . . . . . . . . 23 dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . 24 ttl/nmos compatible .......................................................... 24 cmos compatible .................................................................. 25 test conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 26 figure 9. test setup ....................................................................... 26 table 7. test specifications ........................................................... 26 key to switching waveforms. . . . . . . . . . . . . . . . 26 ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . 27 read operations .................................................................... 27 figure 10. read operations timings ............................................. 27 erase/program operations ..................................................... 28 figure 11. program operation timings .......................................... 29 figure 12. chip/sector erase operation timings .......................... 29 figure 13. data# polling timings (during embedded algorithms) . 30 figure 14. toggle bit timings (during embedded algorithms) ...... 30 figure 15. dq2 vs. dq6 ................................................................. 30 figure 16. sector unlock sequence timing diagram .................... 31 figure 17. sector relock timing diagram ..................................... 31 figure 18. sector protect/unprotect timing diagram .................... 32 alternate ce# controlled erase/program operations ............ 33 figure 19. alternate ce# controlled write operation timings ...... 34 erase and programming performance . . . . . . . 35 latchup characteristics . . . . . . . . . . . . . . . . . . . . 35 plcc pin capacitance . . . . . . . . . . . . . . . . . . . . . 35 data retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 physical dimensions . . . . . . . . . . . . . . . . . . . . . . 36 pl 03232-pin plastic leaded chip carrier ......................... 36 revision summary . . . . . . . . . . . . . . . . . . . . . . . . 37 revision a (january 1999) ..................................................... 37 revision b (march 10, 1999) .................................................. 37 revision b+1 (march 18, 1999) .............................................. 37 revision b+2 (may 14, 1999) ................................................. 37 revision b+3 (july 12, 1999) .................................................. 37 revision c (november 12, 1999) ........................................... 37 revision d (february 22, 2000) .............................................. 37 revision e (november 29, 2000) ............................................ 37
4 am29f004b product selector guide note: see ac characteristics for full specifications. block diagram family part number am29f004b speed option v cc = 5.0 v 5% -55 v cc = 5.0 v 10% -70 -90 -120 max access time, ns (t acc )557090120 max ce# access time, ns (t ce )557090120 max oe# access time, ns (t oe ) 25303545 input/output buffers x-decoder y-decoder chip enable output enable logic erase voltage generator pgm voltage generator timer v cc detector state control command register v cc v ss we# ce# oe# stb stb dq0 C dq7 sector switches data latch y-gating cell matrix address latch a0Ca18
am29f004b 5 connection diagrams 1 31 30 2 3 4 5 6 7 8 9 10 11 12 13 17 18 19 20 16 15 14 29 28 27 26 25 24 23 22 21 32 a7 a6 a5 a4 a3 a2 a1 a0 dq0 a14 a13 a8 a9 a11 oe# a10 ce# dq7 a12 a15 a16 a18 v cc we# a17 dq1 dq2 v ss dq3 dq4 dq5 dq6 plcc
6 am29f004b pin configuration a0Ca18 = 19 addresses dq0Cdq7 = 8 data inputs/outputs ce# = chip enable oe# = output enable we# = write enable v cc = +5.0 v single power supply (see product selector guide for device speed ratings and voltage supply tolerances) v ss = device ground nc = pin not connected internally logic symbol 19 8 dq0Cdq7 a0Ca18 ce# oe# we#
am29f004b 7 ordering information standard product amd standard products are available in several packages and operating ranges. the order number (valid combi- nation) is formed by a combination of the elements below. valid combinations valid combinations list configurations planned to be sup- ported in volume for this device. consult the local amd sales office to confirm availability of specific valid combinations and to check on newly released combinations. am29f004b t -55 j i temperature range i = industrial (C40 c to +85 c) e = extended (C55 c to +125 c) package type j = 32-pin rectangular plastic leaded chip carrier (pl 032) speed option see product selector guide and valid combinations boot code sector architecture t = top sector b = bottom sector device number/description am29f004b 4 megabit (512 k x 8-bit) cmos flash memory 5.0 volt-only program and erase valid combinations v cc voltage am29f004bt-55 am29f004bb-55 ji 5.0 v 5% am29f004bt-70 am29f004bb-70 5.0 v 10% am29f004bt-90 am29f004bb-90 ji, je am29f004bt-120 am29f004bb-120
8 am29f004b device bus operations this section describes the requirements and use of the device bus operations, which are initiated through the internal command register. the command register itself does not occupy any addressable memory loca- tion. the register is composed of latches that store the commands, along with the address and data informa- tion needed to execute the command. the contents of the register serve as inputs to the internal state machine. the state machine outputs dictate the func- tion of the device. the appropriate device bus operations table lists the inputs and control levels required, and the resulting output. the following sub- sections describe each of these operations in further detail. table 1. am29f004b device bus operations legend: l = logic low = v il , h = logic high = v ih , v id = 12.0 0.5 v, x = dont care, d in = data in, d out = data out, a in = address in note: see the sections on sector protection and temporary sector unprotect for more information. requirements for reading array data to read array data from the outputs, the system must drive the ce# and oe# pins to v il . ce# is the power control and selects the device. oe# is the output control and gates array data to the output pins. we# should remain at v ih . the internal state machine is set for reading array data upon device power-up. this ensures that no spurious alteration of the memory content occurs during the power transition. no command is necessary in this mode to obtain array data. standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. the device remains enabled for read access until the command register contents are altered. see reading array data for more information. refer to the ac read operations table for timing specifica- tions and to the read operations timings diagram for the timing waveforms. i cc1 in the dc characteristics table represents the active current specification for reading array data. writing commands/command sequences to write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive we# and ce# to v il , and oe# to v ih . an erase operation can erase one sector, multiple sec- tors, or the entire device. the sector address tables indicate the address space that each sector occupies. a sector address consists of the address bits required to uniquely select a sector. see the command defini- tions section for details on erasing a sector or the entire chip, or suspending/resuming the erase operation. after the system writes the autoselect command sequence, the device enters the autoselect mode. the system can then read autoselect codes from the internal register (which is separate from the memory array) on dq7Cdq0. standard read cycle timings apply in this mode. refer to the autoselect mode and autoselect command sequence sections for more information. i cc2 in the dc characteristics table represents the active current specification for the write mode. the ac characteristics section contains timing specification tables and timing diagrams for write operations. program and erase operation status during an erase or program operation, the system may check the status of the operation by reading the status bits on dq7Cdq0. standard read cycle timings and i cc read specifications apply. refer to write operation status for more information, and to each ac charac- teristics section for timing diagrams. standby mode when the system is not reading or writing to the device, it can place the device in the standby mode. in this mode, current consumption is greatly reduced, and the operation ce# oe# we# a0Ca18 dq0Cdq7 read l l h a in d out write l h l a in d in cmos standby v cc 0.5 v x x x high-z ttl standby h x x x high-z output disable l h h x high-z temporary sector unprotect (see note) x x x x x
am29f004b 9 outputs are placed in the high impedance state, inde- pendent of the oe# input. the device enters the cmos standby mode when ce# pin is held at v cc 0.5 v. (note that this is a more restricted voltage range than v ih .) the device enters the ttl standby mode when ce# pin is held at v ih . the device requires standard access time (t ce ) for read access when the device is in either of these standby modes, before it is ready to read data. if the device is deselected during erasure or program- ming, the device draws active current until the operation is completed. in the dc characteristics tables, i cc3 represents the standby current specification. output disable mode when the oe# input is at v ih , output from the device is disabled. the output pins are placed in the high imped- ance state. table 2. am29f004b top boot block sector addresses table 3. am29f004b bottom boot block sector addresses sector a18 a17 a16 a15 a14 a13 sector size (kbytes) address range (in hexadecimal) sa0 0 0 0 x x x 64 00000hC0ffffh sa1 0 0 1 x x x 64 10000hC1ffffh sa2 0 1 0 x x x 64 20000hC2ffffh sa3 0 1 1 x x x 64 30000hC3ffffh sa4 1 0 0 x x x 64 40000hC4ffffh sa5 1 0 1 x x x 64 50000hC5ffffh sa6 1 1 0 x x x 64 60000hC6ffffh sa7 1110xx 32 70000hC77fffh sa8 111100 8 78000hC79fffh sa9 111101 8 7a000hC7bfffh sa10 11111x 16 7c000hC7ffffh sector a18 a17 a16 a15 a14 a13 sector size (kbytes) address range (in hexadecimal) sa0 00000x 16 00000hC03fffh sa1 000010 8 04000hC05fffh sa2 000011 8 06000hC07fffh sa3 0001xx 32 08000hC0ffffh sa4 0 0 1 x x x 64 10000hC1ffffh sa5 0 1 0 x x x 64 20000hC2ffffh sa6 0 1 1 x x x 64 30000hC3ffffh sa7 1 0 0 x x x 64 40000hC4ffffh sa8 1 0 1 x x 0 64 50000hC5ffffh sa9 1 1 0 x x 1 64 60000hC6ffffh sa10 1 1 1 x x x 64 70000hC7ffffh
10 am29f004b autoselect mode the autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on dq7Cdq0. this mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. however, the autoselect codes can also be accessed in-system through the command register. when using programming equipment, the autoselect mode requires v id on address pin a9. address pins a6, a1, and a0 must be as shown in autoselect codes (high voltage method) table. in addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits. refer to the corresponding sector address tables. the command definitions table shows the remaining address bits that are dont care. when all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on dq7Cdq0. to access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in the command defini- tions table. this method does not require v id . see command definitions for details on using the autose- lect mode. table 4. am29f004b autoselect codes (high voltage method) l = logic low = v il , h = logic high = v ih , sa = sector address, x = dont care. sector protection/unprotection the hardware sector protection feature disables both program and erase operations in any sector. the hard- ware sector unprotection feature re-enables both program and erase operations in previously protected sectors. the primary method requires v id on the oe# pin only, and can be implemented either in-system or via pro- gramming equipment. figures 1 and 2 show the algorithms and figures 16, 17, and 18 show the timing diagrams. this method uses standard microprocessor bus cycle timing in addition to the sector unlock and sector relock sequences. for sector unprotect, all unprotected sectors must first be protected prior to the first sector unprotect write cycle. the alternate method intended only for programming equipment required v id on address pin a9 and oe#. this method is compatible with programmer routines written for earlier 5.0 volt-only amd flash devices. publication number 22289 contains further details; contact an amd representative to request a copy. the device is shipped with all sectors unprotected. amd offers the option of programming and protecting sectors at its factory prior to shipping the device through amds expressflash? service. contact an amd representative for details. it is possible to determine whether a sector is protected or unprotected. see autoselect mode for details. description ce# oe# we# a18 to a13 a12 to a10 a9 a8 to a7 a6 a5 to a2 a1 a0 dq7 to dq0 manufacturer id : amd l l h x x v id xlxll 01h device id: am29f004b (top boot block) llh xxv id xlxlh 77h llh device id: am29f004b (bottom boot block) llh xxv id xlxlh 7bh llh sector protection verification l l h sa x v id xlxhl 01h (protected) 00h (unprotected)
am29f004b 11 figure 1. in-system sector protect/sector unprotect algorithms sector protect: write 60h to sector address with a6 = 0, a5 = 1, a1 = 1, a0 = 0 set up sector address wait 150 15 s verify sector protect: write 40h to sector address with a6 = 0, a1 = 1, a0 = 0 read from sector address with a6 = 0, a1 = 1, a0 = 0 (requires 1 s access time) start plscnt = 1 set oe# = v id . write sector unlock sequence with command 24h wait 1 m s data = 01h? set oe# = v id . write sector relock sequence. set oe# = v ih . sector protect complete yes yes no plscnt = 25? yes device failed increment plscnt sector unprotect: write 60h to sector address with a6 = 1, a5 = 1, a1 = 1, a0 = 0 set up first sector address wait 15 1.5 ms verify sector unprotect: write 40h to sector address with a6 = 1, a1 = 1, a0 = 0 read from sector address with a6 = 1, a1 = 1, a0 = 0 (requires 1 s access time) start plscnt = 1 set oe# = v id . write sector unlock sequence with command 24h wait 1 m s data = 00h? last sector verified? sector unprotect complete yes no plscnt = 1000? yes device failed increment plscnt no all sectors protected? protect all sectors: the indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address set up next sector address no no yes no yes no sector protect algorithm sector unprotect algorithm write 60h to any address with a6 = 1, a5 = 1, a1 = 1, a0 = 0 write 60h to any address with a6 = 0, a5 = 1, a1 = 1, a0 = 0 protect another sector? reset plscnt = 1 set oe# = v id . write sector relock sequence. set oe# = v ih . set oe# = v il set oe# = v ih set oe# = v ih set oe# = v il
12 am29f004b temporary sector unprotect this feature allows temporary unprotection of previ- ously protected sectors to change data in-system. the sector unprotect mode is activated by setting the oe# pin to 12.0 volts (v id ). figure 2 shows the algorithm, and figures 16 and 17 show the timing diagrams, for this feature. while oe# is at v id , the sector unlock sequence is written to the device. after the sector unlock sequence is written, the oe# pin is taken back to v ih . the device is now in the temporary sector unprotect mode. while in this mode, formerly protected sectors can be programmed or erased by selecting the appropriate sector address during programming or erase opera- tions. either sector erase or chip erase operations can be performed in this mode. byte program operations require only two cycles, while sector and chip erase operations only require four cycles. refer to the command definitions table. exiting the temporary sector unprotect mode is accom- plished by either removing v cc from the device or by taking oe# back to v id and writing the sector relock sequence. after writing the sector relock sequence, the oe# pin is taken back to v ih and all previously protected sectors will be protected again. figure 2. temporary sector unprotect operation write the three-cycle unlock sequence with command 20h (figure 16) perform erase or program operations oe# = v ih temporary sector unprotect completed (note 2) oe# = v ih (note 1) notes: 1. all protected sectors unprotected. 2. all previously protected sectors are protected once again. start oe# = v id oe# = v id write the two-cycle sector relock sequence (figure 17)
am29f004b 13 hardware data protection the command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to the command defi- nitions table). in addition, the following hardware data protection measures prevent accidental erasure or pro- gramming, which might otherwise be caused by spurious system level signals during v cc power-up and power-down transitions, or from system noise. low v cc write inhibit when v cc is less than v lko , the device does not accept any write cycles. this protects data during v cc power-up and power-down. the command register and all internal program/erase circuits are disabled, and the device resets. subsequent writes are ignored until v cc is greater than v lko . the system must provide the proper signals to the control pins to prevent uninten- tional writes when v cc is greater than v lko . write pulse glitch protection noise pulses of less than 5 ns (typical) on oe#, ce# or we# do not initiate a write cycle. logical inhibit write cycles are inhibited by holding any one of oe# = v il , ce# = v ih or we# = v ih . to initiate a write cycle, ce# and we# must be a logical zero while oe# is a logical one. power-up write inhibit if we# = ce# = v il and oe# = v ih during power up, the device does not accept commands on the rising edge of we#. the internal state machine is automatically reset to reading array data on power-up.
14 am29f004b command definitions writing specific address and data commands or sequences into the command register initiates device operations. the command definitions table defines the valid register command sequences. writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data. all addresses are latched on the falling edge of we# or ce#, whichever happens later. all data is latched on the rising edge of we# or ce#, whichever happens first. refer to the appropriate timing diagrams in the ac characteristics section. reading array data the device is automatically set to reading array data after device power-up. no commands are required to retrieve data. the device is also ready to read array data after completing an embedded program or embedded erase algorithm. after the device accepts an erase suspend command, the device enters the erase suspend mode. the system can read array data using the standard read timings, except that if it reads at an address within erase-suspended sectors, the device outputs status data. after completing a programming operation in the erase suspend mode, the system may once again read array data with the same exception. see erase suspend/erase resume commands for more infor- mation on this mode. the system must issue the reset command to re- enable the device for reading array data if dq5 goes high, or while in the autoselect mode. see the reset command section, next. see also requirements for reading array data in the device bus operations section for more information. the read operations table provides the read parame- ters, and read operation timings diagram shows the timing diagram. reset command writing the reset command to the device resets the device to reading array data. address bits are dont care for this command. the reset command may be written between the sequence cycles in an erase command sequence before erasing begins. this resets the device to reading array data. once erasure begins, however, the device ignores reset commands until the operation is complete. the reset command may be written between the sequence cycles in a program command sequence before programming begins. this resets the device to reading array data (also applies to programming in erase suspend mode). once programming begins, however, the device ignores reset commands until the operation is complete. the reset command may be written between the sequence cycles in an autoselect command sequence. once in the autoselect mode, the reset command must be written to return to reading array data (also applies to autoselect during erase suspend). if dq5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (also applies during erase suspend). autoselect command sequence the autoselect command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected. the command definitions table shows the address and data requirements. this method is an alternative to that shown in the autoselect codes (high voltage method) table, which is intended for prom program- mers and requires v id on address bit a9. the autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. the device then enters the autoselect mode, and the system may read at any address any number of times, without initiating another command sequence. a read cycle at address xx00h or retrieves the manu- facturer code. a read cycle at address xx01h returns the device code. a read cycle containing a sector address (sa) and the address 02h in returns 01h if that sector is protected, or 00h if it is unprotected. refer to the sector address tables for valid sector addresses. the system must write the reset command to exit the autoselect mode and return to reading array data. byte program command sequence programming is a four-bus-cycle operation. the program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. the program address and data are written next, which in turn initiate the embedded program algorithm. the system is not required to provide further controls or timings. the device automatically provides internally generated program pulses and verify the pro- grammed cell margin. (note that if the device is in the temporary sector unprotect mode, the byte program command sequence only requires two cycles.) the command definitions table shows the address and data requirements for the byte program command sequence.
am29f004b 15 when the embedded program algorithm is complete, the device then returns to reading array data and addresses are no longer latched. the system can determine the status of the program operation by using dq7 or dq6. see write operation status for informa- tion on these status bits. any commands written to the device during the embedded program algorithm are ignored. the sector erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. programming is allowed in any sequence and across sector boundaries. a bit cannot be programmed from a 0 back to a 1. attempting to do so may halt the operation and set dq5 to 1, or cause the data# polling algorithm to indicate the operation was suc- cessful. however, a succeeding read will show that the data is still 0. only erase operations can convert a 0 to a 1. note: see the appropriate command definitions table for program command sequence. figure 3. program operation chip erase command sequence chip erase is a six-bus-cycle operation. the chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the embedded erase algorithm. the device does not require the system to preprogram prior to erase. the embedded erase algo- rithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. the system is not required to provide any con- trols or timings during these operations. (note that if the device is in the temporary sector unprotect mode, the chip erase command sequence only requires four cycles.) the command definitions table shows the address and data requirements for the chip erase command sequence. any commands written to the chip during the embedded erase algorithm are ignored. the sector erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. the system can determine the status of the erase oper- ation by using dq7, dq6, or dq2. see write operation status for information on these status bits. when the embedded erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. figure 4 illustrates the algorithm for the erase opera- tion. see the erase/program operations tables in ac characteristics for parameters, and to the chip/sector erase operation timings for timing waveforms. sector erase command sequence sector erase is a six-bus-cycle operation. the sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. two additional unlock write cycles are then followed by the address of the sector to be erased, and the sector erase command. (note that if the device is in the tem- porary sector unprotect mode, the sector erase command sequence only requires four cycles.) the command definitions table shows the address and data requirements for the sector erase command sequence. the device does not require the system to preprogram the memory prior to erase. the embedded erase algo- rithm automatically programs and verifies the sector for an all zero data pattern prior to electrical erase. the system is not required to provide any controls or timings during these operations. after the command sequence is written, a sector erase time-out of 50 s begins. during the time-out period, additional sector addresses and sector erase com- start write program command sequence data poll from system verify data? no yes last address? no yes programming completed increment address embedded program algorithm in progress
16 am29f004b mands may be written. loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. the time between these additional cycles must be less than 50 s, otherwise the last address and command might not be accepted, and erasure may begin. it is recom- mended that processor interrupts be disabled during this time to ensure all commands are accepted. the interrupts can be re-enabled after the last sector erase command is written. if the time between additional sector erase commands can be assumed to be less than 50 s, the system need not monitor dq3. any command other than sector erase or erase suspend during the time-out period resets the device to reading array data. the system must rewrite the command sequence and any additional sector addresses and commands. the system can monitor dq3 to determine if the sector erase timer has timed out. (see the dq3: sector erase timer section.) the time-out begins from the rising edge of the final we# pulse in the command sequence. once the sector erase operation has begun, only the erase suspend command is valid. all other commands are ignored. the sector erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. when the embedded erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. the system can determine the status of the erase operation by using dq7, dq6, or dq2. refer to write operation status for information on these status bits. figure 4 illustrates the algorithm for the erase opera- tion. refer to the erase/program operations tables in the ac characteristics section for parameters, and to the sector erase operations timing diagram for timing waveforms. notes: 1. see the appropriate command definitions table for erase command sequence. 2. see dq3: sector erase timer for more information. figure 4. erase operation start write erase command sequence data poll from system data = ffh? no yes erasure completed embedded erase algorithm in progress
am29f004b 17 erase suspend/erase resume commands the erase suspend command allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. this command is valid only during the sector erase operation, including the 50 s time-out period during the sector erase command sequence. the erase suspend command is ignored if written during the chip erase operation or embedded program algo- rithm. writing the erase suspend command during the sector erase time-out immediately terminates the time-out period and suspends the erase operation. addresses are dont-cares when writing the erase suspend command. when the erase suspend command is written during a sector erase operation, the device requires a maximum of 20 s to suspend the erase operation. however, when the erase suspend command is written during the sector erase time-out, the device immediately ter- minates the time-out period and suspends the erase operation. after the erase operation has been suspended, the system can read array data from or program data to any sector not selected for erasure. (the device erase suspends all sectors selected for erasure.) normal read and write timings and command definitions apply. reading at any address within erase-suspended sectors produces status data on dq7Cdq0. the system can use dq7, or dq6 and dq2 together, to determine if a sector is actively erasing or is erase-sus- pended. see write operation status for information on these status bits. after an erase-suspended program operation is com- plete, the system can once again read array data within non-suspended sectors. the system can determine the status of the program operation using the dq7 or dq6 status bits, just as in the standard program oper- ation. see write operation status for more information. the system may also write the autoselect command sequence when the device is in the erase suspend mode. the device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. when the device exits the autoselect mode, the device reverts to the erase suspend mode, and is ready for another valid operation. see autoselect command sequence for more information. the system must write the erase resume command (address bits are dont care) to exit the erase suspend mode and continue the sector erase operation. further writes of the resume command are ignored. another erase suspend command can be written after the device has resumed erasing.
18 am29f004b command definitions table 5. am29f004b command definitions legend: x = dont care ra = address of the memory location to be read. rd = data read from location ra during read operation. pa = address of the memory location to be programmed. addresses latch on the falling edge of the we# or ce# pulse, whichever happens later. pd = data to be programmed at location pa. data latches on the rising edge of we# or ce# pulse, whichever happens first. sa = address of the sector to be verified (in autoselect mode) or erased. address bits a18Ca13 uniquely select any sector. sa+ = the sector address must be asserted in combination with a0 = 0, a1 = 1, a5 = 1, and a6 = 0 (for protect) or 1 (for unprotect). notes: 1. see table 1 for description of bus operations. 2. all values are in hexadecimal. 3. except when reading array or autoselect data, all bus cycles are write operations. 4. address bits a18Ca11 are dont cares for unlock and command cycles, except when pa or sa is required. 5. no unlock or command cycles required when reading array data. 6. the reset command is required to return to reading array data when device is in the autoselect mode, or if dq5 goes high (while the device is providing status data). 7. the fourth cycle of the autoselect command sequence is a read cycle. 8. the data is 00h for an unprotected sector and 01h for a protected sector. see autoselect command sequence for more information. 9. to activate the sequence, oe# must be at v id . 10. the sector relock command in the second cycle may be written as either 00h or f0h. 11. the system may read and program in non-erasing sectors, or enter the autoselect mode, when in the erase suspend mode. the erase suspend command is valid only during a sector erase operation. 12. the erase resume command is valid only during the erase suspend mode. command sequence (note 1) cycles bus cycles (notes 2C4) first second third fourth fifth sixth addr data addr data addr data addr data addr data addr data read (note 5) 1 ra rd reset (note 6) 1 xxx f0 autoselect (note 7) manufacturer id 4 555 aa 2aa 55 555 90 x00 01 device id, top boot block 4 555 aa 2aa 55 555 90 x01 77 device id, bottom boot block 4 555 aa 2aa 55 555 90 x01 7b sector protect verify (note 8) 4 555 aa 2aa 55 555 90 (sa) x02 00 01 program 4 555 aa 2aa 55 555 a0 pa pd chip erase 6 555 aa 2aa 55 555 80 555 aa 2aa 55 555 10 sector erase 6 555 aa 2aa 55 555 80 555 aa 2aa 55 sa 30 erase suspend (note 11) 1 xxx b0 erase resume (note 12) 1 xxx 30 temporary sector unprotect mode (note 9) enter tsu mode 3 555 aa 2aa 55 555 20 program 2 xxx a0 pa pd sector erase 4 xxx 80 xxx aa xxx 55 sa 30 chip erase 4 xxx 80 xxx aa xxx 55 555 10 sector unlock (note 9) 3 555 aa 2aa 55 555 24 sa+ 60 sa+ 60 sa+ 40 sector relock (notes 9, 10) 2 xxx 90 xxx 00
am29f004b 19 write operation status the device provides several bits to determine the status of a write operation: dq2, dq3, dq5, dq6, and dq7. table 6 and the following subsections describe the functions of these bits. dq7 and dq6 each offer a method for determining whether a program or erase operation is complete or in progress. these three bits are discussed first. dq7: data# polling the data# polling bit, dq7, indicates to the host system whether an embedded algorithm is in progress or completed, or whether the device is in erase sus- pend. data# polling is valid after the rising edge of the final we# pulse in the program or erase command sequence. during the embedded program algorithm, the device outputs on dq7 the complement of the datum pro- grammed to dq7. this dq7 status also applies to programming during erase suspend. when the embedded program algorithm is complete, the device outputs the datum programmed to dq7. the system must provide the program address to read valid status information on dq7. if a program address falls within a protected sector, data# polling on dq7 is active for approximately 2 s, then the device returns to reading array data. during the embedded erase algorithm, data# polling produces a 0 on dq7. when the embedded erase algorithm is complete, or if the device enters the erase suspend mode, data# polling produces a 1 on dq7. this is analogous to the complement/true datum output described for the embedded program algorithm: the erase function changes all the bits in a sector to 1; prior to this, the device outputs the complement, or 0. the system must provide an address within any of the sectors selected for erasure to read valid status information on dq7. after an erase command sequence is written, if all sectors selected for erasing are protected, data# polling on dq7 is active for approximately 100 s, then the device returns to reading array data. if not all selected sectors are protected, the embedded erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. when the system detects dq7 has changed from the complement to true data, it can read valid data at dq7C dq0 on the following read cycles. this is because dq7 may change asynchronously with dq0Cdq6 while output enable (oe#) is asserted low. the data# polling timings (during embedded algorithms) figure in the ac characteristics section illustrates this. table 6 shows the outputs for data# polling on dq7. figure 5 shows the data# polling algorithm. dq7 = data? yes no no dq5 = 1? no yes yes fail pass read dq7Cdq0 addr = va read dq7Cdq0 addr = va dq7 = data? start notes: 1. va = valid address for programming. during a sector erase operation, a valid address is an address within any sector selected for erasure. during chip erase, a valid address is any non-protected sector address. 2. dq7 should be rechecked even if dq5 = 1 because dq7 may change simultaneously with dq5. figure 5. data# polling algorithm
20 am29f004b dq6: toggle bit i toggle bit i on dq6 indicates whether an embedded program or erase algorithm is in progress or complete, or whether the device has entered the erase suspend mode. toggle bit i may be read at any address, and is valid after the rising edge of the final we# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. during an embedded program or erase algorithm operation, successive read cycles to any address cause dq6 to toggle. (the system may use either oe# or ce# to control the read cycles.) when the operation is complete, dq6 stops toggling. after an erase command sequence is written, if all sectors selected for erasing are protected, dq6 toggles for approximately 100 m s, then returns to reading array data. if not all selected sectors are protected, the embedded erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. the system can use dq6 and dq2 together to deter- mine whether a sector is actively erasing or is erase- suspended. when the device is actively erasing (that is, the embedded erase algorithm is in progress), dq6 toggles. when the device enters the erase suspend mode, dq6 stops toggling. however, the system must also use dq2 to determine which sectors are erasing or erase-suspended. alternatively, the system can use dq7 (see the subsection on dq7: data# polling). if a program address falls within a protected sector, dq6 toggles for approximately 2 s after the program command sequence is written, then returns to reading array data. dq6 also toggles during the erase-suspend-program mode, and stops toggling once the embedded program algorithm is complete. the write operation status table shows the outputs for toggle bit i on dq6. refer to figure 6 for the toggle bit algorithm, and to the toggle bit timings figure in the ac characteristics section for the timing diagram. the dq2 vs. dq6 figure shows the differences between dq2 and dq6 in graphical form. see also the subsection on dq2: toggle bit ii. dq2: toggle bit ii the toggle bit ii on dq2, when used with dq6, indi- cates whether a particular sector is actively erasing (that is, the embedded erase algorithm is in progress), or whether that sector is erase-suspended. toggle bit ii is valid after the rising edge of the final we# pulse in the command sequence. dq2 toggles when the system reads at addresses within those sectors that have been selected for era- sure. (the system may use either oe# or ce# to control the read cycles.) but dq2 cannot distinguish whether the sector is actively erasing or is erase-sus- pended. dq6, by comparison, indicates whether the device is actively erasing, or is in erase suspend, but cannot distinguish which sectors are selected for era- sure. thus, both status bits are required for sector and mode information. refer to table 6 to compare outputs for dq2 and dq6. figure 6 shows the toggle bit algorithm in flowchart form, and the section dq2: toggle bit ii explains the algorithm. see also the dq6: toggle bit i subsection. refer to the toggle bit timings figure for the toggle bit timing diagram. the dq2 vs. dq6 figure shows the dif- ferences between dq2 and dq6 in graphical form. reading toggle bits dq6/dq2 refer to figure 6 for the following discussion. when- ever the system initially begins reading toggle bit status, it must read dq7Cdq0 at least twice in a row to determine whether a toggle bit is toggling. typically, a system would note and store the value of the toggle bit after the first read. after the second read, the system would compare the new value of the toggle bit with the first. if the toggle bit is not toggling, the device has com- pleted the program or erase operation. the system can read array data on dq7Cdq0 on the following read cycle. however, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of dq5 is high (see the section on dq5). if it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped tog- gling just as dq5 went high. if the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. if it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. the remaining scenario is that the system initially determines that the toggle bit is toggling and dq5 has not gone high. the system may continue to monitor the toggle bit and dq5 through successive read cycles, determining the status as described in the previous paragraph. alternatively, it may choose to perform other system tasks. in this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of figure 6). dq5: exceeded timing limits dq5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. under these conditions dq5 produces a 1. this is a failure condition that indicates the program or erase cycle was not successfully completed.
am29f004b 21 the dq5 failure condition may appear if the system tries to program a 1 to a location that is previously pro- grammed to 0. only an erase operation can change a 0 back to a 1. under this condition, the device halts the operation, and when the operation has exceeded the timing limits, dq5 produces a 1. under both these conditions, the system must issue the reset command to return the device to reading array data. dq3: sector erase timer after writing a sector erase command sequence, the system may read dq3 to determine whether or not an erase operation has begun. (the sector erase timer does not apply to the chip erase command.) if addi- tional sectors are selected for erasure, the entire time- out also applies after each additional sector erase com- mand. when the time-out is complete, dq3 switches from 0 to 1. the system may ignore dq3 if the system can guarantee that the time between additional sector erase commands will always be less than 50 m s. see also the sector erase command sequence section. after the sector erase command sequence is written, the system should read the status on dq7 (data# polling) or dq6 (toggle bit i) to ensure the device has accepted the command sequence, and then read dq3. if dq3 is 1, the internally controlled erase cycle has begun; all further commands (other than erase sus- pend) are ignored until the erase operation is complete. if dq3 is 0, the device will accept additional sector erase commands. to ensure the command has been accepted, the system software should check the status of dq3 prior to and following each subsequent sector erase command. if dq3 is high on the second status check, the last command might not have been accepted. table 6 shows the outputs for dq3. start no yes yes dq5 = 1? no yes toggle bit = toggle? no program/erase operation not complete, write reset command program/erase operation complete read dq7Cdq0 toggle bit = toggle? read dq7Cdq0 twice read dq7Cdq0 notes: 1. read toggle bit twice to determine whether or not it is toggling. see text. 2. recheck toggle bit because it may stop toggling as dq5 changes to 1. see text. figure 6. toggle bit algorithm (notes 1, 2) (note 1)
22 am29f004b table 6. write operation status notes: 1. dq7 and dq2 require a valid address when reading status information. refer to the appropriate subsection for further details. 2. dq5 switches to 1 when an embedded program or embedded erase operation has exceeded the maximum timing limits. see dq5: exceeded timing limits for more information. operation dq7 (note 1) dq6 dq5 (note 2) dq3 dq2 (note 1) standard mode embedded program algorithm dq7# toggle 0 n/a no toggle embedded erase algorithm 0 toggle 0 1 toggle erase suspend mode reading within erase suspended sector 1 no toggle 0 n/a toggle reading within non-erase suspended sector data data data data data erase-suspend-program dq7# toggle 0 n/a n/a
am29f004b 23 absolute maximum ratings storage temperature plastic packages . . . . . . . . . . . . . . . C65 c to +150 c ambient temperature with power applied. . . . . . . . . . . . . . C55 c to +125 c voltage with respect to ground v cc (note 1) . . . . . . . . . . . . . . . . C2.0 v to +7.0 v a9 , oe# (note 2) . . . . . . . . . . . . C2.0 v to +12.5 v all other pins (note 1) . . . . . . . . . C0.5 v to +7.0 v output short circuit current (note 3) . . . . . . 200 ma notes: 1. minimum dc voltage on input or i/o pins is C0.5 v. during voltage transitions, input or i/o pins may overshoot v ss to C2.0 v for periods of up to 20 ns. see figure 7. maximum dc voltage on input or i/o pins is v cc +0.5 v. during voltage transitions, input or i/o pins may overshoot to v cc +2.0 v for periods up to 20 ns. see figure 8. 2. minimum dc input voltage on pins a9 and oe# is C0.5 v. during voltage transitions, a9 and oe# may overshoot v ss to C2.0 v for periods of up to 20 ns. see figure 7. maximum dc input voltage on pin a9 is +12.5 v which may overshoot to +13.5 v for periods up to 20 ns. 3. no more than one output may be shorted to ground at a time. duration of the short circuit should not be greater than one second. stresses above those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. operating ranges industrial (i) devices ambient temperature (t a ) . . . . . . . . . C40c to +85c extended (e) devices ambient temperature (t a ) . . . . . . . . C55c to +125c v cc supply voltages v cc for 5% devices . . . . . . . . . . .+4.75 v to +5.25 v v cc for 10% devices . . . . . . . . . . . .+4.5 v to +5.5 v operating ranges define those limits between which the func- tionality of the device is guaranteed. 20 ns 20 ns +0.8 v C0.5 v 20 ns C2.0 v figure 7. maximum negative overshoot waveform 20 ns 20 ns v cc +2.0 v v cc +0.5 v 20 ns 2.0 v figure 8. maximum positive overshoot waveform
24 am29f004b dc characteristics ttl/nmos compatible notes: 1. maximum i cc specifications are tested with v cc = v ccmax . 2. the i cc current listed is typically less than 2 ma/mhz, with oe# at v ih . 3. i cc active while embedded erase or embedded program is in progress. 4. not 100% tested. parameter description test conditions min typ max unit i li input load current v in = v ss to v cc , v cc = v cc max 1.0 a i lit a9, oe# input load current (note 4) v cc = v cc max ; a9, oe# = 12.5 v 50 a i lo output leakage current v out = v ss to v cc , v cc = v cc max 1.0 a i cc1 v cc active read current (notes 1, 2) ce# = v il , oe# = v ih 20 30 ma i cc2 v cc active write current (notes 1, 3, 4) ce# = v il , oe# = v ih 30 40 ma i cc3 v cc standby current (note 1) ce#, oe# = v ih 0.4 1 ma v il input low voltage C0.5 0.8 v v ih input high voltage 2.0 v cc + 0.5 v v id voltage for autoselect and temporary sector unprotect v cc = 5.0 v 11.5 12.5 v v ol output low voltage i ol = 12 ma, v cc = v cc min 0.45 v v oh output high voltage i oh = C2.5 ma, v cc = v cc min 2.4 v v lko low v cc lock-out voltage 3.2 4.2 v
am29f004b 25 dc characteristics cmos compatible notes: 1. maximum i cc specifications are tested with v cc = v ccmax . 2. the i cc current listed is typically less than 2 ma/mhz, with oe# at v ih . 3. i cc active while embedded erase or embedded program is in progress. 4. not 100% tested. 5. i cc3 = 20 a max at extended temperature (>+85 c). parameter description test conditions min typ max unit i li input load current v in = v ss to v cc , v cc = v cc max 1.0 a i lit a9, oe#, input load current (note 4) v cc = v cc max ; a9, oe# = 12.5 v 50 a i lo output leakage current v out = v ss to v cc , v cc = v cc max 1.0 a i cc1 v cc active read current (notes 1, 2) ce# = v il , oe# = v ih 20 30 ma i cc2 v cc active write current (notes 1, 3, 4) ce# = v il , oe# = v ih 30 40 ma i cc3 v cc standby current (notes 1, 5) ce# = v cc 0.5 v 0.3 5 a v il input low voltage C0.5 0.8 v v ih input high voltage 0.7 x v cc v cc + 0.3 v v id voltage for autoselect and temporary sector unprotect v cc = 5.0 v 11.5 12.5 v v ol output low voltage i ol = 12 ma, v cc = v cc min 0.45 v v oh1 output high voltage i oh = C2.5 ma, v cc = v cc min 0.85 v cc v v oh2 i oh = C100 a, v cc = v cc min v cc C0.4 v lko low v cc lock-out voltage 3.2 4.2 v
26 am29f004b test conditions table 7. test specifications key to switching waveforms 2.7 k w c l 6.2 k w 5.0 v device under te s t figure 9. test setup note: diodes are in3064 or equivalent test condition -55 all others unit output load 1 ttl gate output load capacitance, c l (including jig capacitance) 30 100 pf input rise and fall times 5 20 ns input pulse levels 0.0C3.0 0.45C2.4 v input timing measurement reference levels 1.5 0.8, 2.0 v output timing measurement reference levels 1.5 0.8, 2.0 v waveform inputs outputs steady changing from h to l changing from l to h dont care, any change permitted changing, state unknown does not apply center line is high impedance state (high z)
am29f004b 27 ac characteristics read operations notes: 1. not 100% tested. 2. see table 7 and figure 9 for test specifications. parameter description speed options jedec std test setup -55 -70 -90 -120 unit t avav t rc read cycle time (note 1) min 55 70 90 120 ns t avqv t acc address to output delay ce# = v il oe# = v il max 55 70 90 120 ns t elqv t ce chip enable to output delay oe# = v il max 55 70 90 120 ns t glqv t oe output enable to output delay max 25 30 35 45 ns t ehqz t df chip enable to output high z (note 1) max 15 20 20 30 ns t ghqz t df output enable to output high z (note 1) max15202030ns t oeh output enable hold time (note 1) read min 0 ns toggle and data# polling min 10 ns t axqx t oh output hold time from addresses, ce# or oe#, whichever occurs first (note 1) min 0 ns t ce outputs we# addresses ce# oe# high z output valid high z addresses stable t rc t acc t oeh t oe t df t oh figure 10. read operations timings
28 am29f004b ac characteristics erase/program operations notes: 1. not 100% tested. 2. see the erase and programming performance section for more information. parameter speed options jedec std description -55 -70 -90 -120 unit t avav t wc write cycle time (note 1) min 55 70 90 120 ns t avwl t as address setup time min 0 ns t wlax t ah address hold time min 45 45 45 50 ns t dvwh t ds data setup time min 30 30 45 50 ns t whdx t dh data hold time min 0 ns t oes output enable setup time min 0 ns t ghwl t ghwl read recovery time before write (oe# high to we# low) min 0 ns t elwl t cs ce# setup time min 0 ns t wheh t ch ce# hold time min 0 ns t wlwh t wp write pulse width min 35 35 45 50 ns t whwl t wph write pulse width high min 20 ns t whwh1 t whwh1 programming operation (note 2) typ 7 s t whwh2 t whwh2 sector erase operation (note 2) typ 1 sec t vcs v cc setup time (note 1) min 50 s
am29f004b 29 ac characteristics oe# we# ce# v cc data addresses t ds t ah t dh t wp pd t whwh1 t wc t as t wph t vcs 555h pa pa read status data (last two cycles) a0h t cs status d out program command sequence (last two cycles) t ch pa notes: 1. pa = program address, pd = program data, d out is the true data at the program address. figure 11. program operation timings oe# ce# addresses v cc we# data 2aah sa t ah t wp t wc t as t wph 555h for chip erase 10 for chip erase 30h t ds t vcs t cs t dh 55h t ch in progress complete t whwh2 va va erase command sequence (last two cycles) read status data notes: 1. sa = sector address (for sector erase), va = valid address for reading status data ( see write operation status). figure 12. chip/sector erase operation timings
30 am29f004b ac characteristics we# ce# oe# high z t oe high z dq7 dq0Cdq6 complement true addresses va t oeh t ce t ch t oh t df va va status data complement status data true valid data valid data t acc t rc note: va = valid address. illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. figure 13. data# polling timings (during embedded algorithms) we# ce# oe# high z t oe dq6/dq2 addresses va t oeh t ce t ch t oh t df va va t acc t rc valid data valid status valid status (first read) (second read) (stops toggling) valid status va note: va = valid address; not required for dq6. illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle. figure 14. toggle bit timings (during embedded algorithms) n ote: the system may use ce# or oe# to toggle dq2 and dq6. dq2 toggles only when read at an address within an e rase-suspended sector. figure 15. dq2 vs. dq6 enter erase erase erase enter erase suspend program erase suspend read erase suspend read erase we# dq6 dq2 erase complete erase suspend suspend program resume embedded erasing
am29f004b 31 ac characteristics figure 16. sector unlock sequence timing diagram figure 17. sector relock timing diagram parameter all speed options jedec std. description unit t vidr v id rise and fall time (not 100% tested) min 500 ns oe# a18 C a0 d7 C d0 ce# we# aah 555h 55h 2aah 20h/24h 555h t vidr if 20h is written, sector unprotect mode is enabled. if 24h is written, command mode sector protect/unprotect is enabled. device is ready to read from array. v id v ss , v il or v ih oe# a18 C a0 d7 C d0 ce# we# 90h xxxh f0h or 00h xxxh t vidr v id v ss , v il or v ih t vidr 0 v or 5 v device exits temporary sector unprotect mod e or command mode sector protect/unprotect. returns to reading array data. device is in either temporary sector unprotect mode or command mode sector protect/unprotect.
32 am29f004b ac characteristics notes: 1. to enable the command mode sector protection/unprotection algorithm, the system must issue the command 24h in the sector unlock sequence. 2. for sector protection, a valid address consists of the sector address with a6 = 0, a5 = 1, a1 = 1, a0 = 0. for sector unprotection, a valid address consists of the sector address with a6 = 1, a5 = 1, a1 = 1, a0 = 0. figure 18. sector protect/unprotect timing diagram oe# a18 C a0 d7 C d0 ce# we# 60h xxxh 60h valid (note 2) valid (note 2) 40h v id sector relock sequence (two cycles) sector unlock sequence (three cycles) v ss array data v ih
am29f004b 33 ac characteristics alternate ce# controlled erase/program operations 1. not 100% tested. 2. see the erase and programming performance section for more information. parameter speed options jedec std. description -55 -70 -90 -120 unit t avav t wc write cycle time (note 1) min 55 70 90 120 ns t avel t as address setup time min 0 ns t elax t ah address hold time min 45 45 45 50 ns t dveh t ds data setup time min 30 30 45 50 ns t ehdx t dh data hold time min 0 ns t oes output enable setup time min 0 ns t ghel t ghel read recovery time before write (oe# high to we# low) min 0 ns t wlel t ws we# setup time min 0 ns t ehwh t wh we# hold time min 0 ns t eleh t cp ce# pulse width min 35 35 45 50 ns t ehel t cph ce# pulse width high min 20 ns t whwh1 t whwh1 programming operation (note 2) typ 7 s t whwh2 t whwh2 sector erase operation (note 2) typ 1 sec
34 am29f004b ac characteristics t ghel t ws oe# ce# we# t ds data t ah addresses t dh t cp dq7# d out t wc t as t cph pa data# polling a0 for program 55 for erase t whwh1 or 2 t wh pd for program 30 for sector erase 10 for chip erase 555 for program 2aa for erase pa for program sa for sector erase 555 for chip erase notes: 1. pa = program address, pd = program data, dq7# = complement of data written to device, d out = data written to device. 2. figure indicates the last two bus cycles of the command sequence. figure 19. alternate ce# controlled write operation timings
am29f004b 35 erase and programming performance notes: 1. typical program and erase times assume the following conditions: 25 c, 5.0 v v cc , 1,000,000 cycles. additionally, programming typicals assume checkerboard pattern. 2. under worst case conditions of 90c, v cc = 4.5 v (4.75 v for 5% devices), 1,000,000 cycles. 3. the typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. in the pre-programming step of the embedded erase algorithm, all bytes are programmed to 00h before erasure. 5. system-level overhead is the time required to execute the four-bus-cycle sequence for the program command. see table 5 for further information on command definitions. 6. the device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles. latchup characteristics note: includes all pins except v cc . test conditions: v cc = 5.0 v, one pin at a time. plcc pin capacitance notes: 1. sampled, not 100% tested. 2. test conditions t a = 25 c, f = 1.0 mhz. data retention parameter typ (note 1) max (note 2) unit comments sector erase time 1 8 s excludes 00h programming prior to erasure (note 4) chip erase time 8 s byte programming time 7 300 s excludes system level overhead (note 5) chip programming time (note 3) 3.6 10.8 s description min max input voltage with respect to v ss on all pins except i/o pins (including a9 and oe#) C1.0 v 12.5 v input voltage with respect to v ss on all i/o pins C1.0 v v cc + 1.0 v v cc current C100 ma +100 ma parameter symbol parameter description test conditions typ max unit c in input capacitance v in = 0 4 6 pf c out output capacitance v out = 0 8 12 pf c in2 control pin capacitance v pp = 0 8 12 pf parameter test conditions min unit minimum pattern data retention time 150 c 10 years 125 c 20 years
36 am29f004b physical dimensions pl 03232-pin plastic leaded chip carrier dwg rev ah; 10/99
am29f004b 37 revision summary revision a (january 1999) initial release. revision b (march 10, 1999) global revised document into full data sheet. revision b+1 (march 18, 1999) in-system sector protect/sector unprotect algorithms figure added requirements for asserting address a5 and setting oe# to v ih during both algorithms. command definitions table added a5 requirement to definition for sa+ in the legend. in the fourth cycle of the sector relock sequence, changed address from xxx to sa+. sector protect/unprotect timing diagram modified drawing to indicate that oe# should be dropped to v ih during the third cycle. revision b+2 (may 14, 1999) ordering information changed the temperature range in the example to i. device bus operation table corrected the highest bit in the address range column header to a18. command definitions table in note 4, changed the address range for bits that are dont care to a18Ca12. dc characteristics table in note 5, deleted reference to i cc4 . read operations timings and alternate ce# controlled write operations figures deleted reset# waveform. revision b+3 (july 12, 1999) global deleted all references to the pdip package. changed data sheet status to preliminary. in-system sector protect/unprotect algorithms figure added tolerance specifications to the 150 s and 15 ms waits. clarified that reading from the sector address during either sector protect or unprotect algorithm requires an access time of 1 s. revision c (november 12, 1999) ac characteristicsfigure 11. program operations timing and figure 12. chip/sector erase operations deleted t ghwl and changed oe# waveform to start at high. physical dimensions replaced figures with more detailed illustrations. revision d (february 22, 2000) global the preliminary designation has been removed from the document. parameters are now stable, and only speed, package, and temperature range combinations are expected to change in future data sheet revisions. revision e (november 29, 2000) added table of contents. ordering information deleted burn-in option. table 5, command definitions in note 4, corrected lower address bit of dont care range to a11. trademarks copyright ? 2000 advanced micro devices, inc. all rights reserved. amd, the amd logo, and combinations thereof are registered trademarks of advanced micro devices, inc. expressflash is a trademark of advanced micro devices, inc. product names used in this publication are for identification purposes only and may be trademarks of their respective companies

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